JP3862862B2 - Flame prevention device for semiconductor manufacturing exhaust gas abatement machine - Google Patents

Flame prevention device for semiconductor manufacturing exhaust gas abatement machine Download PDF

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JP3862862B2
JP3862862B2 JP17296998A JP17296998A JP3862862B2 JP 3862862 B2 JP3862862 B2 JP 3862862B2 JP 17296998 A JP17296998 A JP 17296998A JP 17296998 A JP17296998 A JP 17296998A JP 3862862 B2 JP3862862 B2 JP 3862862B2
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flame
exhaust gas
water
semiconductor manufacturing
wire mesh
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JPH11151418A (en
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啓志 今村
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Kanken Techno Co Ltd
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Kanken Techno Co Ltd
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Description

【0001】
【発明の属する技術分野】
半導体製造に使用する各種ガスの無害化に当たり電熱式酸化加熱方式の除害機において排ガス導入前処理のために設置する安全装置としての火炎防止装置に関するものである。
【0002】
【従来の技術】
CVDによる半導体製造においては、各種薄膜作成に当たりデポジット用ガス(例えば、SiH4,Si26,SiH2Cl2,TEOS,PH3,B26,NH3,N2O等)を使用し、デポジット工程を終了した後にCVD内を清浄化するためにクリーニングガス(例えば、NF3,SF6,C26,CF4等)が通常使用される。
【0003】
これらのガスは本来可燃性,爆発性,腐食性,有毒性等の諸々の危険要因を有している。そのため、大気放出の前に例えば酸化加熱のような手段を備えた除害機を使って除害(無毒化)しなければならない。
【0004】
CVD内では使用ガスに対して複雑な分解反応を起こし、その結果新たな分解生成物(例えば、F2,HF,HCl,SiOX等)を発生し、それが未分解のデポジットガス及びクリーニングガスと随伴して排出される。
【0005】
このような不測の混合ガスを熱源を有するゾーン(反応筒)に酸化のための外部空気の共存下で加熱酸化分解させる場合、例えばSiH4/N2O/N2混合系においてはSiH4濃度1.9〜87.1%の範囲内で、又、SiH4/NF3/N2混合系においてはSiH4濃度0.66〜95.3%の領域で火源がある場合に爆発組成となり、実際に爆発現象を起こすことがある。
【0006】
又、特開平7-323211号に記載のように、熱源を有するゾーンの前段階に水噴射設備を具備し、上記した分解生成物としての粉塵を随伴した排ガス等を洗浄する場合がある。この場合、例えばガス中にSiH2Cl2が存在すると
SiH2Cl2+4H2O→Si(OH)4+2HCl+2H2
のような加水分解反応が起こってH2ガスを発生する場合があり、それが外部空気との混合で爆発現象を起こすことがある。
【0007】
これらの爆発が生じると、閉塞系の配管内で急激な圧力変動が起こり、CVD装置にまで影響を及ぼすことになる。更に、局部的火炎の生成がCVDに至る配管内の可燃性ガス(例えばSiH4等)に伝播し、事故に至るおそれがある。
【0008】
かかる危険性を含んだ除害機において一般的な安全装置としてはガスを水中に放散して水を通過させる水封式安全器や、圧力,温度の異常現象をセンサーで検知してN2ガス等を除害機装置方向へ噴射する逆火防止器がある。
【0009】
然し乍ら、水封式安全器は水封レベルの差位に制限があり、広範囲な爆発現象に対応するのが困難であり、又、逆火防止器はセンサーの検知時間の遅れに不安要因を残している。
【0010】
【発明が解決しようとする課題】
そこで、ヒーターゾーンの前段階に水噴射設備を有する半導体排ガス除害機において、簡単な構成で火炎の伝播を防止することのできる安全機構としての火炎防止装置が求められている。
【0011】
【課題を解決するための手段】
本発明の請求項1記載の半導体製造排ガス除害機の火炎防止装置は、酸化加熱式の半導体製造排ガス除害機の加熱反応筒の前段階に取り付けられる火炎防止装置であって、金網(2)と、該金網(2)の上方に備えられ該金網(2)に向かって水を噴射する水噴射ノズル(3)を有し、該水噴射ノズル (3) は、該金網 (2) よりも半導体製造排ガスの流れの上流側に位置していることを特徴とする。
【0012】
又、請求項2記載の火炎防止装置は、請求項1記載の火炎防止装置において、金網(2a)は複数箇所に間隔を開けて配置されており、各金網配置部に配置される金網(2a)は1枚又は複数枚であり、各金網配置部の上方には水噴射ノズル(3)が備えられていることを特徴とする。
【0013】
本発明の火炎防止装置は、半導体製造排ガス除害処理における付帯装置に火炎伝播防止機能を付与したものである。排ガス処理に対してCVDから除害機に導入される排ガス中にはSiO2を代表とした粉塵、及びF2,NH3,SiH2Cl2等の水可溶性成分,加水分解成分が含まれており、これらの物質が酸化加熱分解処理を行う加熱反応筒に入ることはガス通過抵抗の増大、金属腐食トラブルの促進、NOXのような望ましからざる副生成物の発生等の問題を起こすので出来る限り事前に除去しておくのが望ましく、そのために水スクラバによる水散布をもって処置している。この付帯設備である水スクラバに金網を設置することにより上記粉塵の除去以外に火炎防止の機能を有することを見い出した。
【0014】
金網使用による逆火防止装置の基本原理は火炎の有するエネルギーを金網により冷却せしめ、火炎を排ガス導入の上流方向に出さないことである。それ故、網素材は耐熱性を有する金属とする必要がある。又、冷却効果を高めるためには網構造が密であり、火炎が網目から出ないことが望ましい。
【0015】
然し乍ら、SiO2を代表とする粉塵の目詰まりを無くし、全体としての通気抵抗を減らすことを必要とするが、このことは金網の消炎機能と矛盾する。その兼ね合いを見いだし、更に水噴射を加味することで冷却効果を高め、粉塵目詰まりを流出させる実態を確認した。
【0016】
すなわち、本件火炎防止装置は(a)半導体排ガスの除害に当たっての事前洗浄、(b)金網細隙による消炎作用、(c)粉霧状水による金網冷却化と火炎自体の消滅、(d)水噴射での持ち込み粉塵除去による通気抵抗増加の改善の機能を有する。
【0017】
火炎伝播速度は金網の目開きに反比例することが知られており、目開きが小さい(Tylerの場合はメッシュ数が大きい)程、消炎できる火炎速度は大となる。本発明の場合、代表的爆発現象のH2/空気混合系を想定すると、火炎伝播速度は2.8m/Secであるので、これを消炎すべき金網の目開きは通常JISで3,500程度(Tylerメッシュ6相当)が好適である。
【0018】
本発明においてTylerメッシュ3〜8の金網を2〜5枚使用する。その場合複数枚の金網を積層するか間隔を開けて各金網を設置してもいずれでもよい。なお、使用枚数が5枚を超えると通気抵抗は増加するものの消炎効果の改善はあまり認められない。したがって、5枚以下が好適である。
【0019】
本発明の火炎防止装置は角柱状でも円柱状でもよい。金網形状は火炎防止装置の断面形状に合わせる。例えば、角柱状の場合は20cm角や20×15cm、円柱状の場合は直径20cm等が例示できるが、これは一例であり、本発明は具体的な寸法に限定されるものではない。同様に高さは30〜80cmを例示するが、これについても本発明は具体的な寸法に限定されるものではない。
【0020】
この箱構造の少なくとも天井の中央にノズル1個を設置する。又、金網を1カ所以上5カ所まで設置する。この場合1カ所に1枚づつ設置してもよいし、複数枚積層して設置してもよい。複数枚の金網を間隔を開けて設置する場合には、金網間にノズルを設置してもよい。
【0021】
使用するノズルはSUS304,SUS316Lのように耐食性を有するNi−Cr系鉄合金からなることが望ましい。
【0022】
除害機で処理する排ガスが1000リットル/min迄の風量の場合、ノズルから放出する水量は合計で5〜50リットル/min程度であり、水温は室温でよい。
【0023】
半導体製造排ガスの除害機の場合、上記したような可燃性,爆発性のガス除害、加水分解によって二次的に生じた可燃性,爆発性ガス(例えばH2,エタノール等)の処、更にはCVD内部で行われた反応の結果、その過程が十分解明されない可燃性,爆発性の生成粉塵が除害機に持ち込まれる場合もあり、それらが除害機において酸化加熱分解させるために必要な外部空気と熱源を介して火炎を発生したとしても、金網と水噴射の存在によって火炎が伝播するのを防ぎ、事故に至らしめない。
【0024】
請求項3記載の火炎防止装置は請求項1の火炎防止装置において、金網はNi−Cr系鉄合金製で線径が0.7mm以上1.7mm以下の線材よりなるTylerメッシュ3以上8以下のものであり、該金網は1枚又は2枚以上5枚以下が積層もしくは100mm間隔で1枚づつ配置され、金網配置箇部の上方には金網に向けて水を霧状に散布するための水噴射ノズルを有することを特徴とする。
【0025】
これは、排ガスの持ち込み粉塵の処理と共に火炎防止効果を十分とする上で好適な金網の構成を検討したものである。又、腐食性ガスによる耐食材としてNi−Cr系鉄合金の線材を使用し、ガスの通過抵抗及び消炎効果の両面から考慮し、決定したものである。
【0028】
【発明の実施の形態】
以下、本発明を好適な実施例を用いて説明する。
[実施例1]
図1は本実施例の火炎防止装置の概要を示した図であり、この火炎防止装置を具備した除害機を使用し、爆発組成範囲のSiH4ガスを除害した。
【0029】
この場合、(1)は火炎防止装置の箱構造を形成する筒状体であり、実施例では断面20cm角、高さ70cmの角柱状とした。(2)はSUS304からなる線径1.02mmにて作成されたTylerメッシュ6の金網であり、筒状体(1)の底部付近に1枚に設置した。
【0030】
又、筒状体(1)の頭部から10cm下方の断面中央に水噴射ノズル(3)(株式会社いけうち製ノンコアフルコーンノズル3/8KSFL)を1個取り付け、水を15リットル/minで噴射した。尚、実施例でフルコーンノズルを用いたのは、フルコーンノズルは広範囲に水滴を散布することができ、消炎を目的とした場合に、効率よく高温気体から水滴への熱移動を行わせることができる(冷却効率が高い)からである。
【0031】
除害機は表面温度700℃に設定した複数本の電気ヒータを備え、火炎防止装置を経由して100%SiH4が5リットル/min、N2が95リットル/minの混合ガスを供給し、更に火炎防止装置を通過した場所で外部空気175リットル/minを除害ガスに混合してヒータの熱源に曝した。
【0032】
その結果、5%濃度のSiH4ガスは除害機の排気部において0.1ppm以下の濃度にまで除害された。SiH4の導入時濃度はSiH4/N2系で5%、SiH4/空気/N2系で1.82%であり、SiH4/空気/N2系の爆発下限組成値である1.37%を越えているが、火炎防止装置を備えた本実施例では爆発を生じる事なく安全に除害することができた。又、金網面には粉塵の滞積はなかった。
[実施例2]
図2は本実施例の火炎防止装置の概要を示した図である。筒状体(1)は実施例1と同じものである。SUS316L製で線径1.63mmのTylerメッシュ3からなる金網(2a)5枚をガス通過方向(図面では上方)より2枚,2枚,1枚となるように3カ所に分けて計5枚設置した。各設置箇所の間隔はそれぞれ10cmとなるようにした。
【0033】
実施例1で使用したのと同じ水噴射ノズル(3)3個を各金網設置箇所の上方5cmの断面中央に設置した。噴射ノズルからは合計10リットル/minの水量で水を散布した。
【0034】
ヒーター表面温度750℃に設定した除害機に100%SiH2Cl2が4リットル/min、N2が96リットル/minの混合ガス(SiH2Cl2の濃度4%)を火炎防止装置上方より導入し、それを通過した箇所で外部空気を100リットル/min混入してヒータの熱源に通した。
【0035】
この場合、化学等量的に加水分解が進行したならば通過ガス体中のH2濃度はH2/空気の爆発下限値(LEL)の4%になっている状況であるが、除害処理は安全且つ安定して進行し、除害機の排気部におけるSiH2Cl2濃度は全く実測されなかった。又、金網上には粉体乃至スラッジ状の固形物は存在しなかった。
[比較例1]
火炎防止装置を取り外した以外は実施例1で用いたのと同じ除害機を用いて、同じ条件で比較試験を行った。
【0036】
その結果、SiH4/N2混合ガスが外部空気と接触する箇所で異常な音が発生すると共に、系内の圧力変動が起こり、除害機の安全操業制御機構が作動し、ガス供給系の緊急停止信号が働き、ヒータの通電も停止に至った。すなわち、何らかの異常燃焼を起こしたことになる。
[実施例3]
図3は本実施例の構成の概要を示した図である。図中(5)は排ガスの流れの上流側の径が小さくなるように絞られた火炎遮断ノズルであり、本実施例では筒状体(4)に2個設けられている。実施例では各火炎遮断ノズル(5)の形状は絞り部(5a)の径が10mmφ,開放部(5b)の径(筒状体(4)の内径)が100mmφである。又、火炎遮断ノズル(5)相互の間隔は100mmとした。尚、(5c)は火炎遮断ノズル(5)の絞り部(5a)の上流側に設けられた湾曲面を有する整流部である。この整流部(5c)は後述する水噴射ノズル(6)から噴射された水滴を受けると共に、排ガスが流れる際の通気抵抗を減らすために設けられている。
【0037】
(6)は実施例1で用いたのと同じ水噴射ノズル(フルコーンノズル)であり、2個の火炎遮断ノズルの中間、すなわち最下段(最下流側)の火炎遮断ノズルの上部(上流側)に設けられ、最下段(最下流側)の火炎遮断ノズルに向かって水を噴射することができる。この水噴射ノズル(6)は、水圧0.5kgf/cm2,水噴出量30リットル/minで稼働させた。
【0038】
尚、排ガスを反応筒(7)に導く排ガス導入管が火炎遮断ノズル(5)や水噴射ノズル(6)を収納可能な径を有している場合には、この排ガス導入管をそのまま筒状体(4)として使用することができる。
【0039】
排ガスとして100%H210リットル,希釈用N2190リットル/min(混合ガス中のH2濃度5%)を上記ノズル設置部を経由して反応筒(7)に導入した。反応筒(7)は電熱ヒータを備え、雰囲気温度を700℃に設定した。
【0040】
他方、外部空気を75リットル/minの流量で直接反応筒(7)に供給し、排ガスのH2と混合の上、燃焼除害せしめた。その結果、処理ガス放出孔側のガス中H2濃度は1000ppmを示し、計算上の除害率は98%となった。そして、火炎遮断ノズル(5)より排ガス導入側に火炎が来た形跡はなかった。尚、水噴射後の貯水槽水温は55℃となった。
【0041】
尚、本実施例では火炎遮断ノズルは2個としたが、1個又は3個以上としても良い。又、本実施例では最下段(最下流側)の火炎遮断ノズルの上流側にのみ水噴射ノズルを設けたが、火炎遮断ノズルが複数ある場合には、他の火炎遮断ノズルの上流側にも水噴射ノズルを設けてもよい。
[比較例2]
火炎遮断ノズル(5)や水噴射ノズル(6)を設置しない以外は実施例3と同様の装置を用いて比較を行った。ガス供給条件(組成,風量,濃度)は実施例3と同一にして混合排ガスを700℃雰囲気の反応筒に供給し、更に実施例3同様に外部空気を反応筒へ直接導入した。
【0042】
その結果、反応筒内で起こった燃焼が爆発現象を伴って一部は反応筒に設けられた放爆口を突破し、他部は排ガス導入管側へ逆火伝播を起こした。逆火焔は1000℃以上となった。
【0043】
【発明の効果】
以上述べたように、本発明によりヒーターゾーンの前段階に水噴射設備を有する半導体排ガス除害機において、簡単な構成で火炎の伝播を防止することのできる安全機構としての火炎防止装置を提供することができた。
【図面の簡単な説明】
【図1】実施例1の構成の概要を示した図。
【図2】実施例2の構成の概要を示した図。
【図3】実施例3の構成の概要を示した図。
【符号の説明】
(1) 筒状体
(2) 金網
(3) 水噴射ノズル
(5) 火炎遮断ノズル
(6) 水噴射ノズル
[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a flame prevention device as a safety device installed for pretreatment of exhaust gas in a detoxifier of an electrothermal oxidation heating system for detoxifying various gases used for semiconductor manufacturing.
[0002]
[Prior art]
In semiconductor manufacturing by CVD, a deposit gas (for example, SiH 4 , Si 2 H 6 , SiH 2 Cl 2 , TEOS, PH 3 , B 2 H 6 , NH 3 , N 2 O, etc.) is used for forming various thin films. A cleaning gas (for example, NF 3 , SF 6 , C 2 F 6 , CF 4, etc.) is usually used to clean the inside of the CVD after the deposit process is completed.
[0003]
These gases inherently have various risk factors such as flammability, explosiveness, corrosiveness, and toxicity. Therefore, it must be detoxified (detoxified) using a detoxifier equipped with means such as oxidation heating before being released into the atmosphere.
[0004]
Within the CVD, a complicated decomposition reaction occurs with the gas used, and as a result, new decomposition products (for example, F 2 , HF, HCl, SiO X, etc.) are generated, which are undecomposed deposit gas and cleaning gas. And is discharged in conjunction.
[0005]
When such an unexpected mixed gas is thermally oxidized and decomposed in a zone (reaction cylinder) having a heat source in the presence of external air for oxidation, for example, in a SiH 4 / N 2 O / N 2 mixed system, the SiH 4 concentration Within the range of 1.9 to 87.1%, and in the SiH 4 / NF 3 / N 2 mixed system, if there is a fire source in the region of SiH 4 concentration 0.66 to 95.3%, it will become an explosive composition and actually cause an explosion phenomenon There is.
[0006]
In addition, as described in JP-A-7-323211, there are cases where a water injection facility is provided in the previous stage of a zone having a heat source, and the exhaust gas accompanied by dust as the decomposition product described above is washed. In this case, for example, when SiH 2 Cl 2 is present in the gas, SiH 2 Cl 2 + 4H 2 O → Si (OH) 4 + 2HCl + 2H 2
In some cases, H 2 gas is generated due to the hydrolysis reaction, which may cause an explosion phenomenon when mixed with external air.
[0007]
When these explosions occur, sudden pressure fluctuations occur in the closed piping, which affects the CVD apparatus. Furthermore, the generation of a local flame may propagate to a combustible gas (for example, SiH 4 ) in the pipe leading to CVD, leading to an accident.
[0008]
As a general safety device in a detoxifier containing such a danger, a water-sealed safety device that diffuses gas into water and allows water to pass through, and N 2 gas by detecting abnormal pressure and temperature phenomena with a sensor There is a backfire preventer that injects etc. toward the abatement device.
[0009]
However, the water-sealed safety device has a limited level of water-sealing level, making it difficult to cope with a wide range of explosion phenomena, and the backfire preventive device remains a cause of anxiety in the delay of the sensor detection time. ing.
[0010]
[Problems to be solved by the invention]
Therefore, there is a demand for a flame prevention device as a safety mechanism that can prevent the propagation of flame with a simple configuration in a semiconductor exhaust gas abatement device having a water injection facility in the previous stage of the heater zone.
[0011]
[Means for Solving the Problems]
A flame prevention device for a semiconductor production exhaust gas abatement device according to claim 1 of the present invention is a flame prevention device attached to the front stage of a heating reaction tube of an oxidation heating type semiconductor production exhaust gas abatement device, comprising a wire mesh (2 and), have a water injection nozzle (3) for injecting water toward the provided upwardly gold network (2) of the gold network (2), the water injection nozzle (3), from the gold network (2) Is also located upstream of the flow of the semiconductor manufacturing exhaust gas .
[0012]
The flame prevention device according to claim 2 is the flame prevention device according to claim 1, wherein the metal mesh (2a) is arranged at intervals at a plurality of locations, and the metal mesh (2a) arranged at each metal mesh arrangement portion. ) Is one sheet or a plurality of sheets, and a water jet nozzle (3) is provided above each wire netting portion.
[0013]
The flame prevention device of the present invention is a device in which a flame propagation prevention function is added to an auxiliary device in semiconductor manufacturing exhaust gas abatement treatment. The exhaust gas introduced from the CVD to the abatement device for the exhaust gas treatment contains dust typified by SiO 2 , water-soluble components such as F 2 , NH 3 , SiH 2 Cl 2 , and hydrolysis components. If these substances enter the heating reaction tube that performs oxidation pyrolysis treatment, problems such as an increase in gas passage resistance, promotion of metal corrosion troubles, and generation of undesirable by-products such as NO x are caused. Therefore, it is desirable to remove it in advance as much as possible, and for this purpose, treatment is carried out by spraying water with a water scrubber. It has been found that by installing a wire mesh in the water scrubber which is ancillary equipment, it has a function of preventing flames in addition to the above dust removal.
[0014]
The basic principle of a backfire prevention device using a wire mesh is that the energy of the flame is cooled by the wire mesh so that the flame is not emitted upstream of the exhaust gas introduction. Therefore, the net material needs to be a metal having heat resistance. In order to enhance the cooling effect, it is desirable that the net structure is dense and the flame does not come out of the net.
[0015]
However, it is necessary to eliminate clogging of dust typified by SiO 2 and reduce the overall ventilation resistance, which contradicts the flame extinguishing function of the wire mesh. The trade-off was found, and the cooling effect was enhanced by adding water injection, and the actual condition of causing dust clogging to flow out was confirmed.
[0016]
That is, this flame prevention device is (a) pre-cleaning for semiconductor exhaust gas detoxification, (b) extinguishing action by wire mesh slits, (c) wire mesh cooling by dusty water and extinguishing of the flame itself, (d) It has a function to improve ventilation resistance by removing dust brought in by water jet.
[0017]
It is known that the flame propagation speed is inversely proportional to the opening of the wire mesh. The smaller the opening (in the case of Tyler, the larger the mesh number), the higher the flame speed at which the flame can be extinguished. In the case of the present invention, assuming a typical explosion H 2 / air mixed system, the flame propagation speed is 2.8 m / Sec, and the opening of the wire mesh to be extinguished is usually about 3,500 in JIS. (Equivalent to Tyler mesh 6) is preferable.
[0018]
In the present invention, 2 to 5 wire meshes of Tyler meshes 3 to 8 are used. In that case, it does not matter whether a plurality of wire meshes are stacked or each wire mesh is installed with an interval. Note that when the number of sheets used exceeds five, the ventilation resistance increases, but the improvement of the flame-extinguishing effect is not recognized so much. Therefore, 5 sheets or less are suitable.
[0019]
The flame prevention device of the present invention may be prismatic or cylindrical. Match the wire mesh shape to the cross-sectional shape of the flame prevention device. For example, in the case of a prismatic shape, a 20 cm square or 20 × 15 cm can be exemplified, and in the case of a cylindrical shape, a diameter of 20 cm can be exemplified, but this is an example, and the present invention is not limited to specific dimensions. Similarly, although the height is exemplified by 30 to 80 cm, the present invention is not limited to specific dimensions.
[0020]
One nozzle is installed at least in the center of the ceiling of the box structure. In addition, wire mesh will be installed from 1 to 5 locations. In this case, one piece may be installed at one place, or a plurality of sheets may be stacked and installed. When installing a plurality of wire meshes at intervals, nozzles may be provided between the wire meshes.
[0021]
The nozzle to be used is preferably made of a Ni—Cr based iron alloy having corrosion resistance such as SUS304 and SUS316L.
[0022]
When the exhaust gas to be treated by the detoxifier has an air volume of up to 1000 liter / min, the total amount of water discharged from the nozzle is about 5 to 50 liter / min, and the water temperature may be room temperature.
[0023]
In the case of a semiconductor manufacturing exhaust gas abatement machine, the treatment of flammable and explosive gases as described above, the treatment of flammable and explosive gases (for example, H 2 , ethanol, etc.) secondary generated by hydrolysis, In addition, flammable and explosive dust that cannot be fully elucidated as a result of reactions performed inside the CVD may be brought into the detoxifier, which is necessary for oxidative thermal decomposition in the detoxifier. Even if a flame is generated through external air and a heat source, the presence of the wire mesh and water jet prevents the flame from propagating and does not lead to an accident.
[0024]
The flame prevention device according to claim 3 is the flame prevention device according to claim 1, wherein the wire mesh is made of a Ni-Cr-based iron alloy and has a wire diameter of 0.7 mm or more and 1.7 mm or less, and a Tyler mesh of 3 or more and 8 or less. The metal mesh is one or two or more and five or less laminated or arranged one by one at 100 mm intervals, and water for spraying water in a mist toward the metal mesh above the metal mesh arrangement part. It has an injection nozzle.
[0025]
This is a study of a wire mesh structure suitable for treating the dust brought into the exhaust gas as well as providing a sufficient flame prevention effect. Further, the wire was made of a Ni—Cr-based iron alloy as a corrosion resistant material by a corrosive gas, and was determined in consideration of both the gas passage resistance and the flame extinguishing effect.
[0028]
DETAILED DESCRIPTION OF THE INVENTION
The present invention will be described below with reference to preferred embodiments.
[Example 1]
FIG. 1 is a diagram showing an outline of a flame prevention apparatus of this example. A detoxifier equipped with this flame prevention apparatus was used to remove SiH 4 gas in the explosion composition range.
[0029]
In this case, (1) is a cylindrical body that forms the box structure of the flame prevention device. In the example, the cylindrical body has a 20 cm square section and a 70 cm height. (2) is a wire mesh of Tyler mesh 6 made of SUS304 and having a wire diameter of 1.02 mm, and is installed in the vicinity of the bottom of the cylindrical body (1).
[0030]
In addition, one water injection nozzle (3) (Ikeuchi non-core full cone nozzle 3 / 8KSFL) is attached to the center of the cross section 10 cm below the head of the cylindrical body (1), and water is injected at 15 liters / min. did. In addition, the full cone nozzle was used in the examples because the full cone nozzle can spread water droplets over a wide range, and when aiming at extinguishing the flame, the heat transfer from the high temperature gas to the water droplets can be efficiently performed. This is because (the cooling efficiency is high).
[0031]
The detoxifier is equipped with a plurality of electric heaters set at a surface temperature of 700 ° C., supplying a mixed gas of 5% / min of 100% SiH 4 and 95 L / min of N 2 via a flame prevention device, Furthermore, 175 liter / min of external air was mixed with the detoxifying gas at the place where it passed through the flame prevention device and exposed to the heat source of the heater.
[0032]
As a result, the SiH 4 gas having a concentration of 5% was detoxified to a concentration of 0.1 ppm or less in the exhaust section of the detoxifier. Introducing at the concentration of SiH 4 is 5% SiH 4 / N 2 system, 1.82% in the SiH 4 / air / N 2 system, which is the lower explosive limit composition value of SiH 4 / air / N 2 system 1. Although it exceeded 37%, in the present Example provided with the flame prevention apparatus, it was able to remove safely without causing an explosion. Moreover, there was no dust accumulation on the wire mesh surface.
[Example 2]
FIG. 2 is a diagram showing an outline of the flame prevention device of this embodiment. The cylindrical body (1) is the same as in the first embodiment. Five SUS316L wire meshes (2a) made of Tyler mesh 3 with a wire diameter of 1.63 mm are divided into three parts in two locations from the gas passage direction (upward in the drawing), two, and a total of five. installed. The interval between each installation location was set to 10 cm.
[0033]
Three water injection nozzles (3) identical to those used in Example 1 were installed in the center of the cross section 5 cm above each wire mesh installation location. Water was sprayed from the spray nozzle at a total water volume of 10 liters / min.
[0034]
A mixed gas (SiH 2 Cl 2 concentration of 4%) with 100% SiH 2 Cl 2 at 4 liters / min and N 2 at 96 liters / min is applied to the abatement device set at a heater surface temperature of 750 ° C. from above the flame prevention device. The air was introduced, and outside air was mixed at 100 liters / min when passing through it and passed through the heat source of the heater.
[0035]
In this case, if hydrolysis progresses chemically, the H 2 concentration in the passing gas body is 4% of the H 2 / air explosion lower limit (LEL). Proceeded safely and stably, and the concentration of SiH 2 Cl 2 in the exhaust part of the abatement device was not actually measured. Further, no powder or sludge-like solid was present on the wire mesh.
[Comparative Example 1]
A comparative test was performed under the same conditions using the same abatement machine used in Example 1 except that the flame prevention device was removed.
[0036]
As a result, abnormal noise is generated at the location where the SiH 4 / N 2 mixed gas comes into contact with external air, pressure fluctuations in the system occur, the safe operation control mechanism of the abatement device operates, and the gas supply system The emergency stop signal worked, and the heater was turned off. That is, some kind of abnormal combustion has occurred.
[Example 3]
FIG. 3 is a diagram showing an outline of the configuration of this embodiment. In the figure, (5) is a flame cutoff nozzle narrowed so that the upstream diameter of the exhaust gas flow becomes smaller. In this embodiment, two are provided in the cylindrical body (4). In the embodiment, the shape of each flame cutoff nozzle (5) is such that the diameter of the throttle portion (5a) is 10 mmφ, and the diameter of the open portion (5b) (inner diameter of the cylindrical body (4)) is 100 mmφ. The interval between the flame cutoff nozzles (5) was 100 mm. Incidentally, (5c) is a rectifying part having a curved surface provided on the upstream side of the throttle part (5a) of the flame cutoff nozzle (5). The rectifying unit (5c) is provided to receive water droplets ejected from a water spray nozzle (6), which will be described later, and to reduce ventilation resistance when exhaust gas flows.
[0037]
(6) is the same water injection nozzle (full cone nozzle) used in Example 1, which is the middle of the two flame cutoff nozzles, that is, the uppermost (upstream side) of the lowermost (most downstream) flame cutoff nozzle. ), And water can be sprayed toward the flame cutoff nozzle at the lowest stage (the most downstream side). This water injection nozzle (6) was operated at a water pressure of 0.5 kgf / cm 2 and a water discharge rate of 30 liters / min.
[0038]
If the exhaust gas introduction pipe that guides the exhaust gas to the reaction cylinder (7) has a diameter that can accommodate the flame cutoff nozzle (5) and the water injection nozzle (6), the exhaust gas introduction pipe is directly cylindrical. Can be used as body (4).
[0039]
As exhaust gases, 10 liters of 100% H 2 and 190 liters / min of N 2 for dilution (H 2 concentration in the mixed gas 5%) were introduced into the reaction cylinder (7) via the nozzle installation part. The reaction cylinder (7) was equipped with an electric heater, and the ambient temperature was set to 700 ° C.
[0040]
On the other hand, external air was directly supplied to the reaction cylinder (7) at a flow rate of 75 liters / min, mixed with H 2 of exhaust gas, and burned off. As a result, the H 2 concentration in the gas on the treatment gas discharge hole side was 1000 ppm, and the calculated removal rate was 98%. There was no evidence that a flame came to the exhaust gas introduction side from the flame cutoff nozzle (5). The water tank water temperature after water injection was 55 ° C.
[0041]
In this embodiment, the number of flame cutoff nozzles is two, but it may be one or three or more. Further, in this embodiment, the water injection nozzle is provided only on the upstream side of the flame cutoff nozzle at the lowest stage (the most downstream side). However, when there are a plurality of flame cutoff nozzles, the water injection nozzle is also provided on the upstream side of the other flame cutoff nozzles. A water injection nozzle may be provided.
[Comparative Example 2]
A comparison was made using the same apparatus as in Example 3 except that the flame blocking nozzle (5) and the water injection nozzle (6) were not installed. The gas supply conditions (composition, air volume, concentration) were the same as in Example 3, the mixed exhaust gas was supplied to the reaction tube in the 700 ° C. atmosphere, and external air was directly introduced into the reaction tube as in Example 3.
[0042]
As a result, the combustion that occurred in the reaction cylinder partly broke through the discharge port provided in the reaction cylinder with an explosion phenomenon, and the other part caused a backfire propagation to the exhaust gas introduction pipe side. The reverse flame temperature exceeded 1000 ℃.
[0043]
【The invention's effect】
As described above, the present invention provides a flame prevention device as a safety mechanism capable of preventing the propagation of flame with a simple configuration in a semiconductor exhaust gas abatement device having a water injection facility in the previous stage of a heater zone. I was able to.
[Brief description of the drawings]
FIG. 1 is a diagram showing an outline of a configuration of a first embodiment.
FIG. 2 is a diagram showing an outline of a configuration of a second embodiment.
3 is a diagram showing an outline of the configuration of Embodiment 3. FIG.
[Explanation of symbols]
(1) Tubular body
(2) Wire mesh
(3) Water jet nozzle
(5) Flame blocking nozzle
(6) Water jet nozzle

Claims (3)

酸化加熱式の半導体製造排ガス除害機の加熱反応筒の前段階に取り付けられる火炎防止装置であって、
金網と、該金網の上方に備えられ該金網に向かって水を噴射する水噴射ノズルを有し、 該水噴射ノズルは、該金網よりも半導体製造排ガスの流れの上流側に配設されていることを特徴とする半導体製造排ガス除害機の火炎防止装置。
A flame prevention device attached to the front stage of a heating reaction tube of an oxidation heating type semiconductor manufacturing exhaust gas abatement machine,
And wire mesh, towards the gold net provided above the gold network have a water injection nozzle for injecting water, the water injection nozzle is disposed upstream of the flow of the semiconductor manufacturing exhaust gas than gold network A flame prevention apparatus for a semiconductor manufacturing exhaust gas abatement machine.
金網は複数箇所に間隔を開けて配置されており、各金網配置部に配置される金網は1枚又は複数枚であり、各金網配置部の上方には水噴射ノズルが備えられていることを特徴とする請求項1記載の半導体製造排ガス除害機の火炎防止装置。  The metal mesh is arranged at a plurality of positions at intervals, and one or a plurality of metal meshes are arranged in each metal mesh arrangement part, and a water injection nozzle is provided above each metal mesh arrangement part. The flame prevention apparatus for a semiconductor manufacturing exhaust gas abatement apparatus according to claim 1. 金網はNi−Cr系鉄合金製で線径が0.7mm以上1.7mm以下の線材よりなるTylerメッシュ3以上8以下のものであり、該金網は1枚又は2枚以上5枚以下が積層もしくは100mm間隔で1枚づつ配置され、金網配置箇部の上方には金網に向けて水を霧状に散布するための水噴射ノズルを有する
ことを特徴とする請求項1記載の半導体製造排ガス除害機の火炎防止装置。
The wire mesh is made of a Ni-Cr-based iron alloy and has a wire diameter of 0.7 mm or more and 1.7 mm or less, and a Tyler mesh of 3 or more and 8 or less, and the wire mesh is laminated by 1 sheet or 2 or more and 5 sheets or less. Alternatively, it is disposed one by one at intervals of 100 mm, and has a water injection nozzle for spraying water in a mist toward the wire mesh above the wire mesh placement portion. Flame prevention device for harmful equipment.
JP17296998A 1997-09-19 1998-06-19 Flame prevention device for semiconductor manufacturing exhaust gas abatement machine Expired - Lifetime JP3862862B2 (en)

Priority Applications (1)

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JP27382097 1997-09-19
JP9-273820 1997-09-19
JP17296998A JP3862862B2 (en) 1997-09-19 1998-06-19 Flame prevention device for semiconductor manufacturing exhaust gas abatement machine

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JP3862862B2 true JP3862862B2 (en) 2006-12-27

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AUPR050300A0 (en) * 2000-09-28 2000-10-26 Kapitoures, Kosta Pollutant emission control
WO2002035590A1 (en) * 2000-10-27 2002-05-02 Tokyo Electron Limited Heat-treating device
GB2402085A (en) * 2002-03-01 2004-12-01 Oiko Group Ltd Device for removing pollutants from exhaust gases
GB2402086B (en) * 2002-03-01 2005-08-17 Oiko Group Ltd Device and method for removing pollutants from exhaust gases

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