JP3833284B2 - Thin film forming equipment - Google Patents

Description

[0001]
[Industrial application fields]
The present invention relates to a thin film forming apparatus, and in particular, simultaneously realizes strong reactivity, which is an advantage of a CVD method, and film formation in a high vacuum, which is an advantage of a PVD method (this can form a dense and strong film). The present invention relates to a novel thin film forming apparatus.
[0002]
[Prior art]
Conventionally, as a thin film forming apparatus (method) for forming a thin film on a thin film forming substrate (hereinafter referred to as a substrate), those using a CVD method or a PVD method are well known. The reactivity is strong, and the apparatus by the PVD method has an advantage that a dense strong thin film can be formed in a high vacuum.
Various types of thin film forming apparatuses using the CVD method, the PVD method, and the like have been proposed in the past, and the methods are extremely diverse.
However, in these conventional thin film forming apparatuses, the adhesion of the formed film to the substrate is weak, or film formation on a substrate such as a plastic film having low heat resistance is difficult or formed. There was a problem that the characteristics of the thin film were not uniform.
[0003]
Therefore, as a thin film forming method for solving these problems, conventionally, a high frequency electromagnetic field is generated between an evaporation source and an object to be deposited, and a material evaporated in an active or inert gas is ionized to perform vacuum deposition. The so-called ion plating method and the DC ion plating method in which a DC voltage is applied between the evaporation source and the deposition target have been proposed (Japanese Patent Publication No. 52-29971, Japanese Patent Publication No. 52-29091). Kaisho 57-171666 etc.).
Furthermore, as a newer one, a grid electrode and a filament for generating thermoelectrons are arranged between the evaporation source and the deposition object, and plasma is generated by the grid electrode and the filament to evaporate in an active or inert gas. There has been proposed a method in which the deposited material is ionized and vacuum deposition is performed (Japanese Patent No. 1571203 (Japanese Patent Laid-Open No. 59-89763)).
[0004]
[Problems to be solved by the invention]
However, since these methods are batch-type methods, it has been difficult to achieve high productivity for large-area substrates.
[0005]
The present invention has been made in view of the above circumstances, can form a thin film having extremely strong adhesion to a substrate, can uniformly form a thin film on a plurality of large-area substrates, and It is an object of the present invention to provide a thin film forming apparatus having a novel configuration in which a plastic film having no heat resistance can be used as a substrate.
[0006]
[Means for Solving the Problems]
To achieve the above objective, First means The thin film forming apparatus according to the present invention includes a vacuum chamber into which an active gas or an inert gas or a mixed gas of both is introduced, an evaporation source for evaporating an evaporation substance in the vacuum chamber, and a substrate disposed in the vacuum chamber. A counter electrode composed of a guide member that supports and conveys a substrate holder that holds the substrate so as to face the evaporation source, a grid that allows an evaporating substance disposed between the evaporation source and the counter electrode to pass through, and the grid Connected to the both ends of the vacuum chamber, a filament for generating thermoelectrons disposed between the evaporation source and a means for making the grid potential positive with respect to the counter electrode potential and the filament potential. An auxiliary vacuum chamber for storing the substrate holder and means for moving the substrate holder between the three vacuum chambers. A storage drive unit for driving the guide member to reciprocate the substrate holder between the substrate holder storage units at both ends in the vacuum chamber; A transport driving device for moving the substrate holder arranged up and down and a transport driving device for reciprocating between the auxiliary vacuum chamber and the vacuum chamber. In this configuration, the substrate holder is transferred between the two.
[0007]
Second means The thin film forming device by First means In this thin film forming apparatus, a plurality of evaporation sources are arranged to face each other so as to be orthogonal to the traveling direction of the substrate passing above.
[0008]
Third means The thin film forming device by First or second means In this thin film forming apparatus, a film thickness correction plate is arranged between the substrate and the grid.
[0009]
Fourth means The thin film forming device by First means In this thin film forming apparatus, a substrate heating heater for heating the substrate passing through the vacuum chamber from above is provided.
[0010]
5th means The thin film forming device by First means In the thin film forming apparatus, a grid storage portion is provided in one auxiliary vacuum chamber, a means for defining a positional relationship between the grid and the evaporation source, and grids arranged in multiple stages in the auxiliary vacuum chamber are arranged vertically. A structure having a transport driving device for moving and a transport driving device for reciprocating between the auxiliary vacuum chamber and the vacuum chamber, and transferring the grid between the two transport driving devices in the auxiliary vacuum chamber It is what (Claim 1) .
[0011]
Sixth means The thin film forming device by First means In the thin film forming apparatus, a filament storage section is provided in one auxiliary vacuum chamber, means for defining the positional relationship between the filament and the evaporation source, and filaments arranged in multiple stages in the auxiliary vacuum chamber are arranged vertically. A structure having a transport driving device for moving and a transport driving device for reciprocating between the auxiliary vacuum chamber and the vacuum chamber, and transferring the filament between the two transport driving devices in the auxiliary vacuum chamber It is what (Claim 4) .
[0012]
[Action]
Hereinafter, the configuration and operation of the present invention will be described in detail.
First means The thin film forming apparatus according to the present invention includes a vacuum chamber, an auxiliary vacuum chamber for storing a substrate holder connected to both ends of the vacuum chamber, a counter electrode including a guide member for supporting and transporting the substrate holder, a grid, and a thermoelectron generating unit. A filament, an evaporation source (one or more), a grid and a counter electrode, power supply means having a predetermined potential relationship between the filament, and means for moving the substrate holder between the three vacuum chambers, The vacuum chamber has a central film forming portion and substrate holder accommodating portions at both ends thereof, and is used for driving the guide member to reciprocate the substrate holder between the substrate holder accommodating portions at both ends in the vacuum chamber. A driving device for moving the substrate holder arranged in multiple stages in the auxiliary vacuum chamber up and down, and a reciprocating movement between the auxiliary vacuum chamber and the vacuum chamber; Having a feed drive.
[0013]
An active gas, an inert gas, or a mixed gas of both is introduced into the vacuum chamber.
The counter electrode is provided in the vacuum chamber, and includes a guide member that supports a substrate holder that holds a deposition target substrate (hereinafter referred to as a substrate) on a surface facing the evaporation source, and the guide member is a transport driving device. Is supported and driven.
The grid is capable of allowing the evaporating substance to pass through, and is disposed between the evaporation source and the counter electrode, and is made positive with respect to the potential of the counter electrode and the filament by the power supply means.
The filament for generating thermoelectrons is disposed between the grid and the evaporation source in the vacuum chamber, and the thermoelectrons generated by the filament are used to ionize a part of the evaporation material.
A part of the evaporated substance from the evaporation source is ionized into positive ions by electrons from the filament. The partially ionized evaporation material passes through the grid, is further accelerated by positive ionization by the ionized gas, and is accelerated toward the substrate by the action of the electric field between the grid and the substrate. The evaporated substance collides with and adheres to the substrate with the kinetic energy due to the acceleration to form a thin film.
[0014]
The electrons from the filament are radiated from the filament with kinetic energy corresponding to the filament temperature. Therefore, the electrons pass through the grid without being immediately attracted to the positive potential grid, and are pulled back by the Coulomb force by the grid. As it is said, the vibration motion is repeated around the grid, and finally it is absorbed by the grid, so it does not reach the substrate and the substrate is not subject to electron impact. A temperature rise can be prevented, and a non-heat-resistant material such as plastic can be used as the substrate.
[0015]
Here, in the thin film forming apparatus of the present invention, film formation is performed while the guide member is driven by the transport driving device and the substrate holder is moved between the substrate holder accommodating portions at both ends in the vacuum chamber. It is also possible to perform film formation while reciprocating according to the film formation speed and the target film thickness. In addition, since each point aligned in the traveling direction on the substrate passes through the same place during film formation, uniform film formation is possible.
In addition, the substrate holders arranged in multiple stages in the auxiliary vacuum chamber can be moved up and down, and a new substrate holder can be moved between the vacuum chamber and the auxiliary vacuum chambers at both ends. In addition, it is not necessary to open the inside of the vacuum chamber to the atmosphere, and high productivity can be realized.
[0016]
Second means In the thin film forming apparatus according to the above, by arranging the plurality of evaporation sources so as to be orthogonal to the traveling direction of the substrate passing thereabove, the evaporation and ionization of the evaporated substance, and the film formation by activation are made uniform, It is possible to make the film quality, film thickness, and the like uniform. Here, each evaporation source can be controlled independently.
[0017]
Third means In the thin film forming apparatus according to, the film thickness distribution can be made more uniform by arranging the film thickness correction plate between the substrate and the grid. The film thickness correction plate is set so as to be partially shielded with respect to the traveling direction of the substrate. The shape is desirably determined in accordance with the shape and arrangement of the evaporation source, the film formation status, and the like.
[0018]
Fourth means Is provided with a substrate heating heater for heating the substrate passing through the vacuum chamber from above (rear surface). By heating with a heater, moisture adsorbed on the substrate can be released and adhesion can be improved.
[0019]
5th means In the thin film forming apparatus according to, the grid is connected to the grid holder, arranged between the evaporation source and the counter electrode, and is made positive with respect to the potential of the counter electrode and the filament by the power supply means. Moreover, a grid can be moved between a vacuum chamber and an auxiliary | assistant vacuum chamber as needed. Furthermore, a stopper for fixing the grid holder is provided in the vacuum chamber so that the position of the grid can be defined when the grid is introduced into the vacuum chamber.
In the apparatus according to the present invention, the discharge becomes unstable due to the formation of the coating film due to the adhesion of the evaporated particles on the grid, and the increase in the number of film formation, which has been difficult, can be performed without exposing the substrate and the vacuum chamber to the atmosphere. This can be done by exchanging the grid.
[0020]
Sixth means In the thin film forming apparatus according to, a filament for generating thermoelectrons is connected to a filament holder and disposed between a grid in a vacuum chamber and an evaporation source. Moreover, a filament can be moved between a vacuum chamber and an auxiliary vacuum chamber as needed. Furthermore, a stopper for fixing the filament holder is provided in the vacuum chamber so that the position of the filament can be defined when the filament is introduced into the vacuum chamber.
As a result, filament consumption due to energization heating in the active gas and filament consumption when using a material that has an effect on the material constituting the filament, such as Al, as the evaporation material are problematic and difficult. An increase in the number of films can be achieved by replacing the substrate and the vacuum chamber with new filaments appropriately in the auxiliary vacuum chamber without exposing the substrate and the vacuum chamber to the atmosphere.
[0021]
【Example】
Hereinafter, the illustrated embodiment will be described.
Figure 1 First means FIG. 2 is a plan view showing an arrangement example of a guide belt, a substrate holder, and a stocker in an auxiliary vacuum chamber of the thin film forming apparatus shown in FIG.
1 and 2, the vacuum chamber A and the auxiliary vacuum chambers B and C are connected through gate valves D and E. In the vacuum chamber A, the guide belt 108 that also serves as a counter electrode that supports and conveys the substrate holder 12, the moving mechanism 43 of the guide belt 108 including the rotating shafts 43 a and 43 b, and the like The landing plate 111, the grid 10, the filament 8, and the evaporation source 4 are provided at appropriate intervals. The grid 10, the filament 8, and the evaporation source 4 are held in a horizontal state by electrodes 9, 7, and 3 that also serve as a support. These electrodes 3, 7, and 9 are all drawn out of the vacuum chamber through the base plate 1 while maintaining electrical insulation with the base plate 1. That is, these electrodes 3, 7, and 9 are used for electrical connection and power feeding inside and outside the vacuum chamber, and can be used as a conductive means together with other wiring tools. It is secured.
[0022]
Here, the evaporation source 4 supported by the pair of electrodes 3 is for evaporating the evaporation substance, and is configured as a resistance heating type in which a metal such as tungsten or molybdenum is formed in a coil shape. . However, it may be a boat shape instead of a coil shape. Furthermore, instead of such an evaporation source, an evaporation source used in a conventional vacuum deposition method such as an electron beam evaporation source can be used as appropriate.
On the other hand, a filament 8 for generating thermoelectrons of tungsten or the like is supported between the pair of electrodes 7. The shape of the filament 8 is determined so as to cover the spread of the particles of the evaporated substance evaporated from the evaporation source 4 by arranging a plurality of filament wires in parallel or in a mesh shape. .
In addition, a grid 10 is supported on the supporting electrode 9. The shape of the grid 10 is determined so as to allow the evaporating substance to pass therethrough. In this example, the grid 10 has a mesh shape.
[0023]
The supporting electrode 3, 7, 9 is a conductor and also serves as an electrode, and the ends protruding outside the vacuum chamber A are connected to various power sources as shown in FIG. ing.
First, the evaporation source 4 is connected to an evaporation power source 17 through a pair of electrodes 3. Next, a direct current power source 18 is provided, and the positive side of the direct current power source 18 is grounded via the electrode 9 to the grid 10 and the negative side of the direct current power source 18 is grounded. The guide belt 108 also serving as a counter electrode and its moving mechanism 43 are at ground potential, and the potential of the grid 10 is set to be positive with respect to the potential of the guide belt 108 and its moving mechanism 43. Thus, the electric field between the grid 10 and the substrate holder 12 is directed from the grid 10 side to the substrate holder 12 side during film formation.
The filament 8 is connected to both ends of a DC power source 19 through a pair of electrodes 7.
Actually, these electrical connections include various switches, and the film forming process is realized by these operations, but these switches are not shown in the drawing.
[0024]
The vacuum chamber A is vertically divided into a guide belt side and an evaporation source side by an adhesion prevention plate 111, and the area of the opening of the adhesion prevention plate 111 on the guide belt side becomes a central film-forming part, and the prevention of both ends thereof. A region shielded by the landing plate 111 is a substrate holder accommodating portion. Then, as a transport driving device for driving the guide belt 108 to reciprocate the substrate holder 12 between the substrate holder accommodating portions at both ends in the vacuum chamber A, the moving mechanism 43 is powered by a rotation introducing device (not shown). Is transmitted, and the guide belt 108 is caused to travel (that is, the conveyance driving device is constituted by the moving mechanism 43, the guide belt 108, the rotation introducing device, the power source, etc.)
The guide belt 108 is composed of two belts stretched around the rotating shafts 43a and 43b of the moving mechanism 43, and the two belts are arranged in a rail shape at a predetermined interval. Does not interfere with the passage of evaporative material from.
[0025]
The substrate holder 12 before film formation is arranged in multiple stages in the stocker 13 in the auxiliary vacuum chamber B, and can be moved up and down one step at a time by a transport driving device 14 for moving up and down. It is transferred onto a guide belt 109 of a transport driving device for reciprocating between the vacuum chambers A. Then, the substrate holder 12 is accommodated in the vacuum chamber A by transferring the substrate holder 12 from the guide belt 109 in the auxiliary vacuum chamber B to the guide belt 108 in the vacuum chamber A when the gate valve D is opened. Then, the guide belt 108 is driven by the moving mechanism 43 to perform film formation while moving the substrate holder 12 along the guide belt 108.
After the film formation is completed, the substrate holder 12 is transferred into the auxiliary vacuum chamber C by transferring the substrate holder 12 from the guide belt 108 in the vacuum chamber A to the guide belt 110 in the auxiliary vacuum chamber C when the gate valve E is opened. The holder 12 is stored. Then, in the auxiliary vacuum chamber C, the substrate holder 12 is transferred to the stocker 15 and stored in multiple stages by the transport driving device 16 that can move up and down one step at a time.
[0026]
Next, FIG. Second means FIG. 5 is a plan view showing an arrangement example of a guide belt, a substrate holder, and an evaporation source in the vacuum chamber.
In this embodiment, as shown in FIG. 3, evaporation, ionization and activation of the evaporated substance are performed by arranging a plurality of evaporation sources 4 so as to be orthogonal to the traveling direction of the substrate holder 12 passing above. It is possible to make uniform the film formation and the film quality and film thickness. Here, each evaporation source 4 can be controlled independently.
[0027]
Next, FIG. Third means 1 is a plan view showing an example in which a film thickness correction plate 21 is disposed between a substrate holder 12 and a grid 10.
The film thickness correction plate 21 is set so as to be partially shielded with respect to the traveling direction of the substrate. The shape is desirably determined in accordance with the shape and arrangement of the evaporation source, the film formation status, and the like.
[0028]
Next, FIG. Fourth means FIG. 6 is a diagram showing an example in which a substrate heating heater 22 for heating the substrate holder 12 passing through the vacuum chamber from above (back surface) is provided so that the substrate can be heated from the back surface. In the figure, the heater 22 is a lamp heater, but a method of contacting the substrate holder 12 and heating by conduction heat may be used. Thus, by heating with the heater 22, the water | moisture content etc. which were adsorb | sucked on the board | substrate are discharge | released and adhesiveness can be improved.
[0029]
Next, FIG. 5th means FIG. 2 is a schematic diagram of a main part of a thin film forming apparatus including a grid transport driving device and an exchange mechanism.
In FIG. 6, a vacuum chamber A and auxiliary vacuum chambers B and C are connected via gate valves D and E. In the vacuum chamber A, the guide belt 108 that also serves as a counter electrode that supports and conveys the substrate holder 12, the moving mechanism 43 of the guide belt 108 that includes the rotating shafts 43 a and 43 b, and the like An attachment plate 111, a guide belt 112 for the grid, a moving mechanism of the guide belt 112 composed of the rotating shafts 53a, 53b and the like, a conductive grid stopper 10c held by the electrode 9 serving as a support, a filament 8, The evaporation source 4 is provided at an appropriate interval.
The thin film forming apparatus of the present embodiment is obtained by adding a grid transport driving device (guide belt 112, moving mechanism 53, etc.) and an exchange mechanism to the thin film forming apparatus shown in FIG. It is the same as the apparatus of FIG.
[0030]
The grid holder 10a is in the vacuum chamber A during film formation, and can be moved into the auxiliary vacuum chamber B by moving along the guide belt 112 as necessary. The grid guide belt 112 is composed of two belts stretched around the rotation shafts 53a and 53b, and the two belts are arranged in a rail shape at a predetermined interval. Does not interfere with the passage of evaporative material from.
Further, when the grid holder 10a is introduced into the vacuum chamber A, the shape of the grid holder 10a has an arc-shaped portion as shown in FIG. 7, and the grid stopper 10c is recessed corresponding to the arc-shaped portion. It has an arc shape, and the arc-shaped portions are securely connected to each other. The arc-shaped portion may be tapered.
Thus, the position of the grid holder 10a can be defined by the grid stopper 10c.
A grid 10b is connected to the grid holder 10a. The shape of the grid 10b is determined so as to allow the evaporating substance to pass therethrough. In this example, the grid 10b has a mesh shape.
[0031]
The grid holder 10a is arranged in multiple stages in the stocker 23 in the auxiliary vacuum chamber B, and can be moved up and down one step at a time by a transport driving device 24 for moving up and down, between the auxiliary vacuum chamber B and the vacuum chamber A. Is transferred onto a guide belt 113 of a transport driving device for reciprocally moving. Then, when the gate valve D is opened, the grid holder 10a is transferred from the guide belt 113 in the auxiliary vacuum chamber B to the guide belt 112 in the vacuum chamber A, whereby the grid holder 10a is accommodated in the vacuum chamber A and the grid stopper 10c. Connect with.
Here, some or all of the rotating shafts 53a and 53b are formed of an insulating material such as ceramics, and are configured to maintain electrical insulation between the vacuum chamber A and the grid 10b.
[0032]
Next, FIG. Sixth means FIG. 2 is a schematic diagram of a main part of a thin film forming apparatus having a filament transport driving device and an exchange mechanism.
In FIG. 8, a vacuum chamber A and auxiliary vacuum chambers B and C are connected via gate valves D and E. In the vacuum chamber A, the guide belt 108 that also serves as a counter electrode that supports and conveys the substrate holder 12, the moving mechanism 43 of the guide belt 108 that includes the rotating shafts 43 a and 43 b, and the like Conductive filament stopper 8c held by a moving mechanism 63 of a filament holder 8a composed of a landing plate 111, a grid 10, a guide belt 114, rotating shafts 63a, 63b, etc., and electrodes 7a, 7b serving as supports, and evaporation Sources 4 are provided at appropriate intervals.
The thin film forming apparatus of this embodiment is obtained by adding a filament transport driving device (guide belt 114, moving mechanism 63, etc.) and an exchange mechanism to the thin film forming apparatus shown in FIG. It is the same as the apparatus of FIG.
[0033]
The filament holder 8a is in the vacuum chamber A during film formation, and can be moved into the auxiliary vacuum chamber B by moving along the guide belt 114 as necessary. The filament guide belt 114 is composed of two belts stretched around the rotary shafts 63a and 63b, and the two belts are arranged in a rail shape at a predetermined interval. Does not interfere with the passage of evaporative material from.
When the filament holder 8a is introduced into the vacuum chamber A, the shape of the filament holder 8a has an arc-shaped portion as shown in FIG. 9 or FIG. 10, and the filament stopper 8c is formed in the arc-shaped portion. Corresponding concave arcs are formed, and the arc-shaped parts are securely connected to each other. The arc-shaped portion may be tapered.
Thus, the position of the filament holder 8a can be defined by the filament stopper 8c.
[0034]
As shown in FIGS. 9 and 10, a filament 8b is connected to the filament holder 8a. The shape of the filament 8b is determined so as to cover the spread of particles of the evaporated substance evaporated from the evaporation source 4 by arranging a plurality of filament wires in parallel.
Further, as shown in FIGS. 9 and 10, the filament holder 8a is divided into a conductive portion 8aa and an insulating portion 8ab so that the filament 8b can be energized.
The filament stopper 8c has an insulating portion 8cb as the center as shown in FIGS. 9 and 10, and the conductive portions 8ca are arranged on both sides thereof. The position of the conductive portion 8ca is as described above. This corresponds to the position of the conductive portion 8aa of the filament holder 8a. In addition, the conductive portions 8ca on both sides of the filament stopper 8c are connected to the electrodes 7a and 7b that also serve as a support, and the electrodes 7a and 7b are connected to the positive side and the negative side of the DC power source 19, respectively. . Therefore, a current can flow between the conductive portions 8aa of the filament holder 8a, and the filament 8b can be energized.
[0035]
The filament holder 8a is arranged in multiple stages in the stocker 33 in the auxiliary vacuum chamber B, and can be moved up and down step by step by a transport driving device 34 for moving up and down. It is transferred onto a guide belt 115 of a transport driving device for reciprocating between them. When the gate valve D is opened, the filament holder 8a is transferred from the guide belt 115 in the auxiliary vacuum chamber B to the guide belt 114 in the vacuum chamber A, whereby the filament holder 8a is accommodated in the vacuum chamber A and the filament stopper 8c. Connect with.
Here, some or all of the rotating shafts 63a and 63b are formed of an insulating material such as ceramics, and are configured to maintain electrical insulation between the vacuum chamber A and the filament 8b.
[0036]
Next, as an example of thin film formation by the thin film forming apparatus of the present invention, the thin film formation by the apparatus example shown in FIG. 1 will be described.
In FIG. 1, first, a base material constituting an evaporating substance is set in the evaporation source 4. Of course, the combination of the base material constituting the evaporated substance and the gas species introduced into the vacuum chamber is selected according to what kind of thin film is formed.
For example, In ₂ O _Three In the case of forming a thin film, In can be selected as the evaporating substance and oxygen as the introduced gas.
[0037]
The inside of the vacuum chamber is 10 ~ in advance by a vacuum exhaust system (not shown). ^Five -10 ~ ⁶ The pressure is adjusted to the pressure of Torr. If necessary, the pressure required by the active gas, the inert gas, or the mixed gas thereof (for example, 10 to ^Four -10 ~ ⁶ Torr). Here, for the sake of concreteness of explanation, it is assumed that the introduced gas is an active gas such as oxygen, for example.
In this state, the power source is operated, and the evaporation source 4 and the filament 8 are energized. As a result, the evaporation material is evaporated from the evaporation source 4, an electric current is passed through the filament 8, and the filament 8 is heated by resistance heating. Emits electrons. Further, a positive potential is applied to the grid 10 with respect to the potential of the counter electrode (guide belt 108 and substrate holder 12) and the filament 8.
[0038]
The evaporation substance evaporated from the evaporation source 4 flies to the substrate side with a spread, and a part of the introduced gas and the introduced gas are ejected by outer electrons due to collision with the thermal electrons emitted from the filament 8, It is ionized to positive ions.
In this way, the partially ionized evaporation substance passes through the grid 10, and at this time, as described above, due to the collision between the thermoelectrons that vibrate up and down in the vicinity of the grid 10 and the ionized introduced gas. Further, the ionization rate is increased.
In this way, the evaporated substance ionized into positive ions passes through the grid 10 and is further accelerated in the positive ionization by the ionized gas and accelerated toward the substrate by the action of the electric field between the grid and the substrate. Impact and adhere to the substrate with high energy. At this time, since the oxygen gas is also activated, an oxide thin film having very good adhesion is formed.
In the end, most of the thermoelectrons are absorbed by the grid 10 and some of the thermoelectrons pass through the grid 10 but are decelerated by the action of the electric field between the grid 10 and the substrate. Even if the substrate is reached, the substrate cannot be heated.
[0039]
Here, during film formation, film formation is performed while the substrate holder 12 is moved between the substrate holder accommodating portions at both ends in the vacuum chamber A. It is also possible to carry out film formation while reciprocating according to the film formation speed and the target film thickness. Thereby, since the respective points arranged in the traveling direction on the substrate pass through the same place during film formation, uniform film formation is possible.
Further, since the substrate holders 12 arranged in multiple stages in the auxiliary vacuum chambers B and C can be moved up and down, a new substrate holder can be moved between the vacuum chamber A and the auxiliary vacuum chambers B and C at both ends. It is not necessary to open the vacuum chamber A to the atmosphere each time a new substrate is set, and high productivity can be realized.
[0040]
In the thin film forming apparatus of the present invention, since the ionization rate of the evaporating substance is extremely high, the evaporating substance and the active gas are separated by introducing the active gas into the vacuum chamber alone or together with the inert gas to form the film. Even when compounding and forming a compound thin film by this combination, a thin film having desired physical properties can be easily obtained.
Note that the thermoelectrons by the filament effectively contribute to ionization of the gas in the vacuum chamber. ^Four It is possible to ionize the evaporated substance even under a high vacuum of a pressure below Torr. Therefore, the structure of the thin film can be made very dense, and the density of the thin film is usually smaller than that of the bulk. However, according to the present invention, it is one of the major features that a density very close to the bulk density can be obtained. Furthermore, by performing film formation under such a high vacuum, it is possible to extremely reduce the incorporation of gas molecules into the thin film and to obtain a high-purity thin film.
In the present invention, uniform low-temperature film formation on a large-area substrate can be performed with high productivity. ₂ O _Three This is particularly effective in producing a transparent electrode.
[0041]
【The invention's effect】
As described above, according to the thin film forming apparatus of the present invention, the evaporated substance is ionized and has high energy electrically (electron / ion temperature), so that film formation and crystallization that require reactivity are required. Can be realized without applying thermal energy of temperature (reaction temperature, crystallization temperature), so that low temperature film formation is possible. Therefore, a plastic film having no heat resistance can be used for the substrate.
Further, in the thin film forming apparatus of the present invention, film formation can be performed while the guide member is driven by the transport driving device and the substrate holder is moved between the substrate holder accommodating portions at both ends in the vacuum chamber. Since film formation can be performed while reciprocating according to the film speed and the target film thickness, each point aligned in the traveling direction on the substrate passes through the same place during film formation. A membrane is possible.
In addition, since the substrate holders arranged in multiple stages in the auxiliary vacuum chamber can be moved up and down, and a new substrate holder can be moved between the vacuum chamber and the auxiliary vacuum chambers at both ends, each time a new substrate is set In addition, it is not necessary to open the inside of the vacuum chamber to the atmosphere, and high productivity can be realized. Therefore, film formation can be performed on a plurality of large substrates with high productivity.
[0042]
Second means In the thin film forming apparatus, by arranging the plurality of evaporation sources so as to be orthogonal to the traveling direction of the substrate passing thereabove, the evaporation and ionization and activation of the evaporated substance are made uniform, Uniformity of film quality, film thickness, etc. can be achieved.
[0043]
Third means In this thin film forming apparatus, the film thickness correction plate is disposed between the substrate and the grid, whereby the film thickness distribution can be made more uniform.
[0044]
Fourth means In the thin film forming apparatus, a substrate heating heater is provided for heating the substrate passing through the vacuum chamber from above (rear surface), and by heating with the heater, moisture adsorbed on the substrate is released and adhered. Can be improved.
[0045]
5th means In the thin film forming apparatus, since the grid storage unit is provided in one auxiliary vacuum chamber and the grid transport / exchange mechanism is provided, the grid is moved between the vacuum chamber and the auxiliary vacuum chamber as necessary. Can do. As a result, the discharge becomes unstable due to the formation of a coating film due to the adhesion of the evaporated particles on the grid, and the increase in the number of film formations, which has been difficult, has caused the grid in the auxiliary vacuum chamber without exposing the substrate and the vacuum chamber to the atmosphere. It becomes possible by exchanging.
[0046]
Sixth means In the thin film forming apparatus, since the filament storage section is provided in one auxiliary vacuum chamber and the filament transport / exchange mechanism is provided, the filament can be moved between the vacuum chamber and the auxiliary vacuum chamber as necessary. it can. As a result, filament consumption due to energization heating in the active gas and filament consumption when using a material that has an effect on the material constituting the filament, such as Al, as the evaporation material are problematic and difficult. An increase in the number of films can be achieved by replacing the substrate and the vacuum chamber with new filaments appropriately in the auxiliary vacuum chamber without exposing the substrate and the vacuum chamber to the atmosphere.
[Brief description of the drawings]
[Figure 1] First means It is a schematic block diagram of the thin film forming apparatus which shows the Example.
2 is a plan view showing an arrangement example of a guide belt, a substrate holder, and a stocker in an auxiliary vacuum chamber of the thin film forming apparatus shown in FIG.
[Fig. 3] Second means It is a figure which shows the Example of this invention, Comprising: It is a top view which shows the example of arrangement | positioning of the guide belt in a vacuum chamber, a substrate holder, and an evaporation source.
[Fig. 4] Third means It is a figure which shows this Example, Comprising: It is a top view which shows the example which has arrange | positioned the film thickness correction board between the substrate holder and the grid.
[Figure 5] Fourth means It is a figure which shows this Example, Comprising: It is a figure which shows the example which provided the heater for board | substrate heating which heats a board | substrate holder from upper direction (back surface).
[Fig. 6] 5th means It is a figure which shows this Example, Comprising: It is a general | schematic principal part block diagram of the thin film forming apparatus which has a conveyance drive apparatus of a grid, and an exchange mechanism.
7 is a plan view showing an example of a grid holder and a grid stopper used in the thin film forming apparatus shown in FIG. 6. FIG.
[Fig. 8] Sixth means It is a figure which shows this Example, Comprising: It is a schematic principal part block diagram of the thin film forming apparatus which has a conveyance drive apparatus of a filament, and an exchange mechanism.
9 is a plan view showing an example of a filament holder and a filament stopper used in the thin film forming apparatus shown in FIG.
10 is a plan view showing another example of a filament holder and a filament stopper used in the thin film forming apparatus shown in FIG.
[Explanation of symbols]
1: Base plate
3, 7, 7a, 7b, 9: Electrode for supporting member
4: Evaporation source
8, 8b: Filament
8a: Filament holder
8c: Filament stopper
10, 10b: Grid
10a: Grid holder
10c: Grid stopper
12: Substrate holder
13, 15: Stocker for substrate holder
14, 16: Transport drive device for substrate holder
17: Power supply for evaporation
18, 19: DC power supply
21: Film thickness correction plate
22: Heater for substrate heating
23: Stocker for grid holder
24: Conveyance drive device for grid holder
33: Stocker for filament holder
34: Conveyance drive device for filament holder
43: Substrate holder moving mechanism
53: Grid holder moving mechanism
63: Filament holder moving mechanism
108: Guide belt for moving the substrate holder in the vacuum chamber
109, 110: A guide belt for transporting the substrate holder in the auxiliary vacuum chamber
111: Protection plate
112: Guide belt for moving the grid holder in the vacuum chamber
113: A guide belt for conveying the grid holder in the auxiliary vacuum chamber
114: Guide belt for moving the filament holder in the vacuum chamber
115: Guide belt for conveying the filament holder in the auxiliary vacuum chamber
A: Vacuum chamber
B, C: Auxiliary vacuum chamber
D, E: Gate valve

Claims (6)

A vacuum chamber into which an active gas or an inert gas or a mixture of both is introduced;
An evaporation source for evaporating the evaporation substance in the vacuum chamber;
A counter electrode composed of a guide member that supports and conveys a substrate holder that is disposed in the vacuum chamber and holds the substrate so as to face the evaporation source;
A grid capable of passing evaporant disposed between the evaporation source and the counter electrode;
A filament for generating thermoelectrons disposed between the grid and the evaporation source; means for setting the potential of the grid to a positive potential with respect to the potential of the counter electrode and the potential of the filament;
An auxiliary vacuum chamber for storing the substrate holder connected to both ends of the vacuum chamber;
Means for moving the substrate holder between the three vacuum chambers;
The vacuum chamber has a central film forming part and substrate holder accommodating parts at both ends thereof,
A transport driving device for driving the guide member to reciprocate the substrate holder between the substrate holder accommodating portions at both ends in the vacuum chamber;
The auxiliary vacuum chamber includes a transport driving device for moving the substrate holders arranged in multiple stages up and down, and a transport driving device for reciprocating between the auxiliary vacuum chamber and the vacuum chamber, In the thin film forming apparatus configured to transfer the substrate holder between the two transport driving devices in FIG.
A grid storage is provided in one auxiliary vacuum chamber,
Means for defining the positional relationship between the grid and the evaporation source;
A transport driving device for moving up and down grids arranged in multiple stages in the auxiliary vacuum chamber and a transport driving device for reciprocating between the auxiliary vacuum chamber and the vacuum chamber;
A thin film forming apparatus , wherein a grid is transferred between two transport driving devices in the auxiliary vacuum chamber . 2. The thin film forming apparatus according to claim 1, wherein the grid has an arc shape, and a portion in contact with the grid of the means for defining a positional relationship between the grid and the evaporation source is a concave arc shape. There is a thin film forming apparatus. In the thin film forming apparatus according to claim 1 Symbol placement, the grid has a tapered shape, the portion which contacts the grid means defining a positional relationship between the grid and the evaporation source in the reverse tapered There is a thin film forming apparatus. A vacuum chamber into which an active gas or an inert gas or a mixture of both is introduced;
An evaporation source for evaporating the evaporation substance in the vacuum chamber;
A counter electrode composed of a guide member that supports and conveys a substrate holder that is disposed in the vacuum chamber and holds the substrate so as to face the evaporation source;
A grid capable of passing evaporant disposed between the evaporation source and the counter electrode;
A filament for generating thermoelectrons disposed between the grid and the evaporation source; means for setting the potential of the grid to a positive potential with respect to the potential of the counter electrode and the potential of the filament;
An auxiliary vacuum chamber for storing the substrate holder connected to both ends of the vacuum chamber;
Means for moving the substrate holder between the three vacuum chambers;
The vacuum chamber has a central film forming part and substrate holder accommodating parts at both ends thereof,
A transport driving device for driving the guide member to reciprocate the substrate holder between the substrate holder accommodating portions at both ends in the vacuum chamber;
The auxiliary vacuum chamber has a transport driving device for moving the substrate holders arranged in multiple stages up and down, and a transport driving device for reciprocating between the auxiliary vacuum chamber and the vacuum chamber, and the inside of the auxiliary vacuum chamber In the thin film forming apparatus configured to transfer the substrate holder between the two transport driving devices in FIG.
In one auxiliary vacuum chamber, a filament storage unit is provided,
Means for defining the positional relationship between the filament and the evaporation source;
A transport driving device for moving up and down filaments arranged in multiple stages in the auxiliary vacuum chamber and a transport driving device for reciprocating between the auxiliary vacuum chamber and the vacuum chamber;
A thin film forming apparatus , wherein the filament is transferred between two transport driving devices in the auxiliary vacuum chamber . 5. The thin film forming apparatus according to claim 4, wherein the filament has an arc shape, and a portion in contact with the filament of the means for defining the positional relationship between the filament and the evaporation source has a recessed arc shape. There is a thin film forming apparatus. 5. The thin film forming apparatus according to claim 4, wherein the filament has a tapered shape, and a portion in contact with the filament of the means for defining the positional relationship between the filament and the evaporation source has an inversely tapered shape. A thin film forming apparatus.

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