JP3831047B2 - Micromanipulator and manufacturing method thereof - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a micromanipulator capable of handling a minute object and a manufacturing method thereof.
[0002]
[Prior art]
Conventionally, as shown in FIG. 13, a micromanipulator 51 used for assembling a micromachine or the like sandwiches a minute object W and handles it at a target location. Further, a bulk strain gauge 52 is attached to the micromanipulator 51 in order to detect the force. The strain gauge 52 is fixed to one (or both) of the micromanipulator 51 and outputs an electrical signal corresponding to the deflection of the manipulator 51 as a detection signal. Based on the detection signal output from the strain gauge, the force (clamping force) of the manipulator 51 can be detected.
[0003]
[Problems to be solved by the invention]
By the way, the bulk strain gauge 52 has different detection sensitivities (different detection signal voltages) depending on the position where the bulk strain gauge 52 is fixed. Therefore, positional accuracy from the tip to the position where it is fixed is required. However, it is difficult to fix the strain gauge 52 with high accuracy, and variations in detection sensitivity occur between the manipulators 51. Therefore, it is necessary to correct the detection sensitivity for each manipulator 51, which is troublesome.
[0004]
Further, when a minute object W is to be sandwiched, it is necessary to detect bending at the tip portion of the manipulator 51. However, since there is a limit to downsizing the strain gauge 52, there is a problem that it cannot be fixed to the tip.
[0005]
Accordingly, the present inventor has proposed that a diffusion strain gauge 55 be built in the micromanipulator 54 as shown in FIG. However, when the handling part 56 at the tip of the manipulator 54 and the sensor part 57 provided with the diffusion strain gauge 55 are arranged in different environments, for example, as shown in FIG. In the case where the sensor unit 57 is disposed in the atmosphere, the following problems occur. That is, when the temperatures of water and air are different from each other, there is a problem that the output from the diffusion strain gauge 55 that is the sensor unit 57 is temperature drifted due to the difference in thermal conductivity of each part.
[0006]
The present invention has been made to solve the above-mentioned problems, and its purpose is to eliminate the influence of temperature drift of the handling section, to eliminate the influence of temperature drift of the diffusion strain gauge, and to change the sensor output. It is an object of the present invention to provide a micromanipulator that prevents the occurrence of the micromanipulator and a method for manufacturing the micromanipulator.
[0007]
[Means for Solving the Problems]
In order to solve the above problems, the invention according to claim 1 is a micromanipulator including a handling unit for handling a minute object, and a pair of finger members for gripping the object, A diffusion strain gauge formed on at least one of a pair of finger members for detecting a force for gripping the object; and a temperature adjusting means for adjusting an ambient temperature of the diffusion strain gauge in the vicinity of the diffusion strain gauge. The gist of the micromanipulator is a single unit .
[0008]
According to a second aspect of the present invention, in the first aspect of the present invention, a temperature detection unit that is provided in the vicinity of the diffusion strain gauge and detects an ambient temperature of the diffusion strain gauge, and the temperature adjustment based on a temperature detection signal from the temperature detection unit The gist of the present invention is a micromanipulator provided with temperature control means for controlling the means and controlling the ambient temperature of the diffusion strain gauge to a predetermined temperature.
[0009]
According to a third aspect of the present invention, in the micromanipulator according to the first or second aspect, the temperature adjusting means is provided between a handling portion provided on a distal end side of a finger member and a diffusion strain gauge. It is a summary.
[0010]
According to a fourth aspect of the present invention, in the micromanipulator according to any one of the first to third aspects, a thin-walled portion is formed on the base end side of the handling portion, and a temperature adjusting means is formed on the thin-walled portion. This is the gist.
[0011]
A fifth aspect of the present invention is the micromanipulator according to any one of the first to fourth aspects, wherein the finger member is formed of a single crystal silicon substrate, and the temperature adjusting means is formed of a diffusion resistor. Is the gist.
[0012]
The invention of claim 6 includes a step of forming an oxide film on the surface side of a single crystal silicon substrate to be a finger member, and a plurality of predetermined regions of the oxide film on a side opposite to the portion to be the tip end side of the finger member. The gist of the present invention is a method of manufacturing a micromanipulator comprising a diffusion strain gauge and a step of forming a diffusion resistance serving as a temperature adjusting means by forming impurities and adding impurities from the window. .
(Function)
According to the first aspect of the present invention, the ambient temperature of the diffusion strain gauge is adjusted by the temperature adjusting means provided in the vicinity of the diffusion strain gauge in the micromanipulator including the handling unit for handling a minute object. . And the temperature drift of the output of the sensor part which consists of a diffusion strain gauge is prevented by adjustment of ambient temperature by this temperature adjustment means. In addition, since the diffusion strain gauge is formed integrally with the finger member, it is not necessary to attach to the finger member, and the provided position is a constant position from the position of the tip of the finger member. It is formed with high accuracy, and variation in the detection signal of the diffusion strain gauge is prevented.
[0013]
According to the invention of claim 2, in addition to the operation of claim 1, the temperature detecting means detects the ambient temperature of the diffusion strain gauge, and the control means is configured to detect the temperature based on the temperature detection signal from the temperature detecting means. The adjusting means is controlled to control the ambient temperature of the diffusion strain gauge to a predetermined temperature.
[0014]
According to the invention of claim 3, in addition to the operation of claim 1 or 2, since the temperature adjusting means is provided between the handling portion provided on the tip side of the finger member and the diffusion strain gauge, When the handling unit side enters, for example, a liquid having a low temperature, the thermal effect is reduced by adjusting the temperature of the temperature adjusting means.
[0015]
According to the invention of claim 4, in addition to the action of any one of claims 1 to 4, since the thin portion has a small heat capacity, the temperature adjustment around the diffusion strain gauge by the temperature adjusting means is performed early. Can do.
[0016]
According to the invention of claim 5, in addition to the operation of any one of claims 1 to 4, the finger member is formed of a single crystal silicon substrate, and the temperature adjusting means is formed of a diffusion resistor.
[0017]
According to the invention of claim 6, an oxide film is formed on the surface side of the single crystal silicon substrate to be a finger member, and a plurality of regions are provided in a predetermined region of the oxide film on the side opposite to the portion to be the tip end side of the finger member. Windows are formed. Then, by adding impurities from the window, a diffusion strain gauge and a diffusion resistance serving as a temperature adjusting means are formed.
[0018]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, an embodiment of the present invention will be described with reference to FIGS.
As shown in FIG. 2, a micromanipulator (hereinafter simply referred to as a manipulator) 11 is provided with a pair of arms A1 and A2. Support members 12 and 13 are provided on the arms A1 and A2, respectively. The support members 12 and 13 are driven and operated by a not-shown actuator in a direction (a direction indicated by an arrow in FIG. 2) in which a minute (about several microns to several tens of microns) object W is sandwiched. Finger members 14 and 15 that hold the object W are attached to the tips of the support members 12 and 13, respectively.
[0019]
The finger members 14 and 15 are made of single crystal silicon having a plane orientation (100), and are formed in the same thin plate shape that is the same as the object W. The finger member 14 is sandwiched and fixed between members 12 a and 12 b constituting the support member 12, and the finger member 15 is sandwiched and fixed between members 13 a and 13 b constituting the support member 13.
[0020]
Both the finger members 14 and 15 are strip-shaped by, for example, mechanical processing (dicing), and the tips thereof are cut obliquely to form handling portions 16 and 17, respectively. The handling parts 16 and 17 are formed in order to enlarge the handling area which clamps the target object W placed on the plane. That is, the manipulator 11 is supported at an angle corresponding to the inclination of the handling parts 16 and 17 so as to sandwich the object W.
[0021]
As shown in FIG. 1A, a diffusion strain gauge 18 is formed on a side surface 14a of one finger member 14 at a predetermined position from the tip. The diffusion strain gauge 18 is connected to a pad 20 via a wiring pattern 19, and the pad 20 is connected to a driving device that drives and controls the micromanipulator 11 via a wiring (not shown).
[0022]
Also, as shown in FIG. 1B, the one finger member 14 is recessed (etched) at an angle corresponding to the plane orientation (100) from the outer surface 14b side by a method such as anisotropic etching. As a result, a thin portion 21 is formed. The thin portion 21 is formed so that the finger member 14 is bent from the thin portion 21 when the manipulator 11 is driven to sandwich the object W, and the force of the manipulator 11 is easily detected.
[0023]
Further, on the side surface 14 a of the finger member 14, a first diffusion resistor 22 is formed as a temperature adjusting means at a predetermined position closer to the tip than the diffusion strain gauge 18 in the thin portion 21. The first diffusion resistor 22 is connected to a pad 24 via a wiring pattern 23, and the pad 24 is connected to a temperature controller 25 as a control means via a wiring as shown in FIG. The temperature controller 25 is composed of an electronic control unit, although not shown, a central processing unit (CPU), a read-only memory (ROM) (not shown) pre-stored with a predetermined control program, etc., and the calculation result of the CPU And a random access memory (RAM) for temporarily storing the data.
[0024]
Further, on the side surface 14 a of the finger member 14, a second diffusion resistor 26 is formed as a temperature detecting means between the diffusion strain gauge 18 and the first diffusion resistor 22 in the thin portion 21. . The second diffusion resistor 26 is connected to a pad 28 through a wiring pattern 27, and the pad 28 is connected to the temperature controller 25 through a wiring as shown in FIG. The second diffusion resistor 26 inputs an electric signal (voltage) corresponding to the ambient temperature of the diffusion strain gauge 18 to the temperature controller 25 as a temperature detection signal.
[0025]
The diffusion strain gauge 18 bends together with the finger member 14 by the force of the manipulator 11, and outputs an electrical signal corresponding to the bending stress as a detection signal. The finger member 14, the diffusion strain gauge 18, and the thin portion 21 constitute a force sensor (sensor portion) that detects the force of the manipulator 11. FIG. 3 shows an equivalent circuit configured by connecting each diffusion strain gauge 18, and a bridge circuit is configured as shown in the figure. In the figure, R0 is the resistance of each diffusion bridge 18. That is, the finger members 14 and 15 are configured to be able to grasp the object W and detect the force for grasping the object W by the force sensor.
[0026]
The diffusion strain gauge 18 is formed at a position where the bending is maximum when the finger member 14 is bent by the operation of the manipulator 11. Accordingly, the diffusion strain gauge 18 best detects the force of the manipulator 11 and outputs an electrical signal corresponding to the force as a detection signal. The diffusion strain gauge 18 is formed in the orientation <110>. The diffusion strain gauge 18 formed in this orientation <110> has the highest voltage of the output electric signal. Therefore, the diffusion strain gauge 18 has the highest detection sensitivity of the bending stress of the finger member 14, that is, the force of the manipulator 11.
[0027]
When manufacturing the finger member 14, first, a silicon wafer (not shown) having a surface orientation (100) is prepared. A diffusion strain gauge 18 is formed on the front side of the silicon wafer, and a thin portion 21 is formed by etching from the back side. Next, the finger member 14 is formed by mechanically processing (dicing) the silicon wafer on which the diffusion strain gauge 18 and the thin portion 21 are formed into a strip shape.
[0028]
Therefore, unlike the conventional bulk strain gauge 52, the diffusion strain gauge 18 does not need to be attached to the finger member 14. Further, the position of the diffusion strain gauge 18 is a fixed position from the tip of the finger member 14, and can be formed with high accuracy. Therefore, the detection signal output from the diffusion strain gauge 18 has no variation for each finger member 14.
[0029]
Further, since the diffusion strain gauge 18 can be formed smaller than the conventional bulk strain gauge 52, it can be formed near the tip of the finger member 14. Further, a thin portion 21 is formed on the finger member 14, and the diffusion strain gauge 18 is bent by the bending of the finger member 14. As a result, the force detection sensitivity is higher than that of the manipulator 51 using the conventional bulk strain gauge 52.
[0030]
When handling an object W placed on a plane, the manipulator 11 is supported obliquely so that the handling parts 16 and 17 are substantially parallel to the plane, so that any part of the handling parts 24 and 25 is subject to the object W. Can be handled. Therefore, the manipulator 11 of the present embodiment has a wide area for handling the object W, that is, a so-called handling area.
[0031]
Next, the manufacturing process of said finger member 14 is demonstrated according to FIGS. 4 to 10, the dimensions of the finger member 14 are appropriately changed in order to make the manufacturing process easy to understand.
[0032]
First, as shown in FIG. 4, an oxide film (SiO2 film) 32 is formed on the upper surface of a silicon substrate 31 made of N-type single crystal silicon. Then, as shown in FIG. 5, a window 32 a having a size corresponding to the diffusion strain gauge 18, a window 32 b having a size corresponding to the first diffusion resistor 22, and a second region in a predetermined region of the oxide film 32 by photolithography. A window 32c having a size corresponding to the diffused resistor 26 is formed. Boron is implanted into the silicon substrate 31 by ion implantation or the like from the windows 32a, 32b, and 32c, and the boron is further thermally diffused. As a result, as shown in FIG. 5, the diffusion strain gauge 18, the first diffusion resistor 22, and the second diffusion resistor 26 are formed on the surface that will later become the side surface 14 a of the finger member 14.
[0033]
Next, as shown in FIG. 6, the silicon substrate 31 is oxidized to form an oxide film 33 on the upper surface of the diffusion strain gauge 18. At the same time, an oxide film 33 is formed on the upper surfaces of the first and second diffusion resistors 22 and 26.
[0034]
Next, as shown in FIG. 7, a contact window 33 a is formed at a predetermined position in the oxide film 33 on the diffusion strain gauge 18. Also, windows 33b and 33c for contact are formed on the upper surfaces of the first diffusion resistor 22 and the second diffusion resistor 26. In FIG. 7, the windows 33 b and 33 c for contacting the first diffusion resistor 22 and the second diffusion resistor 26 are different from the window 33 a for contacting the diffusion strain gauge 18, and only one window 33 b and 33 c is illustrated. Although not shown, the first diffused resistor 22 and the second diffused resistor 26 are formed so as to extend in the direction perpendicular to the paper surface in the drawing, so that the other windows 33b and 33c are not shown in the drawing. Is provided.
[0035]
Next, as shown in FIG. 8, after aluminum (Al) is deposited on the upper surface of the silicon substrate 31 by sputtering, vacuum evaporation or the like, the wiring pattern 19 connected to the diffusion strain gauge 18 is performed by photolithography. And a pad 20 (not shown in FIG. 8). At this time, wiring patterns 23 and 27 and pads 24 and 28 (not shown in FIG. 8) connected to the first diffusion resistor 22 and the second diffusion resistor 26 are formed at the same time.
[0036]
Next, as shown in FIG. 9, a passivation film 35 is formed on the upper surface of the silicon substrate 31 by depositing SiN, Si3N4, or the like by CVD or the like, and the wiring patterns 19, 23, 27, etc. are covered.
[0037]
Next, as shown in FIG. 10, an oxide film 37 is formed on the back surface of the silicon substrate 31, and a window 37a is formed in the oxide film 37 by photolithography. The thin portion 21 is formed by etching the silicon substrate 31 from the back surface by anisotropic etching from the window 37a.
[0038]
The usage method of the manipulator 11 manufactured and comprised as mentioned above is demonstrated. First, in an unused state, the temperature controller 25 causes a drive current to flow through the first diffusion resistor 22 so that the diffusion strain gauge 18 reaches a temperature at which temperature drift is suppressed, and heat is generated. Further, the temperature controller 25 causes a current to flow through the second diffusion resistor 26, and inputs the voltage across the second diffusion resistor 26 corresponding to the ambient temperature of the diffusion strain gauge 18 as a detection signal. Based on this input detection signal, the drive current supplied to the first diffusion resistor 22 is adjusted so that the ambient temperature of the diffusion strain gauge 18 becomes a predetermined temperature T, that is, stabilizes.
[0039]
Calibration is performed by using the output signal of the diffusion strain gauge 18 when the ambient temperature of the diffusion strain gauge 18 is a predetermined temperature T as a reference.
Next, at the time of use, the handling parts 16 and 17 of the finger members 14 and 15 and the diffusion strain gauge 18 are arranged in spaces where the use temperature atmospheres are different.
[0040]
For example, when the handling units 16 and 17 are in low temperature water or solution and the diffusion strain gauge 18 is in high temperature air, the ambient temperature of the diffusion strain gauge 18 tends to change in a decreasing direction. Based on the voltage signal (detection signal) across the second diffusion resistor 26 corresponding to the ambient temperature, the temperature controller 25 causes the drive current to flow through the first diffusion resistor 22 to generate heat, thereby adjusting the ambient temperature. A predetermined temperature T is set.
[0041]
As a result, the ambient temperature of the diffusion strain gauge 18 can be maintained at the predetermined temperature T, the temperature drift of the diffusion strain gauge 18 is eliminated, and a stable and highly accurate output signal is obtained.
[0042]
As described above, according to the present embodiment, the following effects can be obtained.
(1) A diffusion strain gauge 18, a first diffusion resistor 22, and a second diffusion resistor 26 as temperature detecting means are formed on the thin portion 21 of the support member 12 constituting the manipulator 11.
[0043]
When the handling units 16 and 17 are in a low temperature space (water or solution) and the diffusion strain gauge 18 is in a high temperature space (for example, air), the temperature controller 25 Even if the temperature changes in a decreasing direction, a driving current is supplied to the first diffusion resistor 22 based on a voltage signal (detection signal) across the second diffusion resistor 26 to generate heat, thereby setting the ambient temperature to a predetermined value. The temperature was controlled to be T.
[0044]
As a result, the ambient temperature of the diffusion strain gauge 18 can be maintained at the predetermined temperature T, the temperature drift of the diffusion strain gauge 18 is eliminated, and a stable and accurate output signal can be obtained.
[0045]
The equivalent circuit of the sensor section forms a bridge circuit as shown in FIG. 3, and this output ΔV (t) is a function of temperature as shown in the following equation.
ΔV (t) = R0 · K0 {1+ (α + β) t} εI
R0 is the resistance value of the diffusion strain gauge 18, K0 is the gauge factor, α is the temperature coefficient of resistance, β is the gauge factor temperature coefficient, t is the temperature, ε is the strain amount, and I is the current value.
[0046]
Therefore, the ambient temperature of the diffusion strain gauge 18 can be maintained at a predetermined temperature by controlling the heat generation of the first diffusion resistor 22 by the control of the temperature controller 25 as described above. As a result, the sensor unit obtains a stable output. be able to.
[0047]
(2) Since the first diffusion resistance 22 is provided between the handling portion 16 provided on the distal end side of the finger member 14 and the diffusion strain gauge 18, the handling portion 16 side is in a liquid having a low temperature, for example. In the case of entering, the thermal effect can be reduced by temperature adjustment by heat generation of the first diffusion resistor 22.
[0048]
(3) Since the thin portion 21 has a small heat capacity, the ambient temperature of the diffusion strain gauge 18 by the first diffusion resistor 22 can be adjusted early.
(4) The finger member 14 made of single crystal silicon on which the diffusion strain gauge 18 and the thin portion 21 are formed is attached to the tips of the support members 12 and 13 constituting the manipulator 11. When the object W is sandwiched by the manipulator 11, the finger member 14 bends at the thin portion 21, and the diffusion strain gauge 18 detects the stress due to the bend and outputs an electrical signal corresponding to the bend as a detection signal. I made it.
[0049]
As a result, the diffusion strain gauge 18 does not need to be attached to the finger member 14 unlike the conventional bulk strain gauge 52. Further, the position of the diffusion strain gauge 18 is a fixed position from the tip of the finger member 14, can be formed with high accuracy, and variation in detection signals for each finger member 14 can be prevented.
[0050]
(5) Since the diffusion strain gauge 18 can be formed smaller than the conventional bulk strain gauge 52, it can be formed near the tip of the finger member 14. Further, a thin portion 21 is formed on the finger member 14, and the diffusion strain gauge 18 is bent by the bending of the finger member 14. As a result, the detection sensitivity of the force can be increased as compared with the manipulator 51 using the conventional bulk strain gauge 52.
[0051]
(6) The handling members 16 and 17 were formed by obliquely forming the tips of the finger members 14 and 15. As a result, the handling area of the manipulator 11 is widened, and the object W placed on the plane can be sandwiched anywhere in the handling parts 16 and 17, so that the minute object W can be easily handled. .
[0052]
In addition, you may change this invention as follows, and the same effect | action and effect are acquired also in that case.
(1) Although the thin portion 21 is formed in the embodiment, it may be embodied in a manipulator that does not form the thin portion 21.
[0053]
(2) In the above embodiment, the outer shape of the finger members 14 and 15 is formed by dicing. However, the outer shape may be formed by anisotropic etching or isotropic etching.
[0054]
(3) In the above embodiment, the finger member 14 is formed using the silicon substrate having the plane orientation (100). However, when the thin portion 21 is formed by using the silicon substrate having the plane orientation (110), It can be etched vertically from the side. When a silicon substrate having a plane orientation (110) is used, when the strain gauge 18 is formed along the orientation <111>, the output voltage for the same strain amount is maximized.
(4) In the above embodiment, the finger members 14 and 15 are formed of single crystal silicon, and the diffusion strain gauge 18 and the thin wall portion 21 are formed on one finger member 14 to detect the force of the manipulator 11. However, a diffusion strain gauge 18 and first and second diffusion resistors 22 and 26 are similarly formed on the other finger member 15 so that the force of the manipulator 11 is detected by both the pair of finger members 14 and 15. May be.
[0055]
(5) In the above embodiment, both the pair of finger members 14 and 15 are formed of single crystal silicon, but the finger member 15 on the side where the thin portion 21 and the diffusion strain gauge 18 are not formed is formed of a metal such as stainless steel. May be.
[0056]
Although the embodiments of the present invention have been described above, technical ideas other than the claims that can be grasped from the embodiments will be described below together with their effects.
(A) In the micromanipulator according to any one of claims 1 to 5, the finger member ((14) is formed with a thin wall portion (21), and the diffusion strain gauge (18) is formed of the thin wall portion (21). A micromanipulator formed on the surface According to this configuration, the finger member is easily bent by the thin portion, and the detection sensitivity of the gripping force can be increased.
[0057]
(B) In addition to the method of manufacturing a micromanipulator according to claim 6, the method of manufacturing a micromanipulator further comprising a step of etching from the back surface of the single crystal silicon substrate (31) to form a thin portion (21). . According to this configuration, it is possible to easily manufacture a micromanipulator that can easily bend the finger member by the thin-walled portion and can increase the detection sensitivity of the gripping force.
[0058]
(C) In the manufacturing method according to claim 6 or (b) above, in addition to the diffusion resistance serving as the temperature adjustment means, the diffusion resistance serving as the temperature detection means is added with an impurity from the window of the oxide film together with the diffusion strain gauge. The manufacturing method of the micromanipulator characterized by including the process formed by. According to this configuration, the diffusion strain gauge, the temperature adjusting means, and the temperature detecting means can be formed simultaneously.
[0059]
【The invention's effect】
As described above in detail, according to the first aspect of the present invention, the ambient temperature of the diffusion strain gauge can be adjusted by the temperature adjusting means provided in the vicinity of the diffusion strain gauge. Temperature drift can be prevented.
According to the first aspect of the present invention, since the diffusion strain gauge is formed integrally with the finger member, it does not need to be attached to the finger member, and the provided position is the finger member. It is possible to form the electrode with a certain position from the position of the tip of the electrode and to form it with high accuracy, and to prevent variations in the detection signal of the diffusion strain gauge.
[0060]
According to the invention of claim 2, in addition to the effect of claim 1, the ambient temperature of the diffusion strain gauge can be controlled to a predetermined temperature.
According to the invention of claim 3, in addition to the effect of claim 1 or 2, the temperature adjusting means is provided between the handling portion provided on the tip side of the finger member and the diffusion strain gauge, For example, when the handling unit enters a liquid having a low temperature, the thermal influence can be reduced by adjusting the temperature of the temperature adjusting means.
[0061]
According to the invention of claim 4, in addition to the effect of any one of claims 1 to 4, since the thin portion has a small heat capacity, the temperature adjustment around the diffusion strain gauge by the temperature adjustment means is performed early. Can do.
[0062]
According to the invention of claim 5, in addition to the effect of any one of claims 1 to 4, the finger member is formed of a single crystal silicon substrate, and the temperature adjusting means can be formed of a diffusion resistor.
[0063]
According to the invention of claim 6, an oxide film is formed on the surface side of the single crystal silicon substrate to be a finger member, and a plurality of regions are provided in a predetermined region of the oxide film on the side opposite to the portion to be the tip end side of the finger member. A diffusion strain gauge and a diffusion resistor serving as a temperature adjusting means can be formed by adding impurities from the window.
[Brief description of the drawings]
FIG. 1A is a plan view of a manipulator according to an embodiment, and FIG.
FIG. 2 is a perspective view showing a manipulator according to one embodiment.
FIG. 3 is an electric circuit diagram of a sensor unit.
FIG. 4 is a cross-sectional view showing a manufacturing process of a manipulator.
FIG. 5 is a cross-sectional view showing a manufacturing process of a manipulator.
FIG. 6 is a cross-sectional view showing a manufacturing process of a manipulator.
FIG. 7 is a cross-sectional view showing the manufacturing process of the manipulator.
FIG. 8 is a cross-sectional view showing a manufacturing process of a manipulator.
FIG. 9 is a cross-sectional view showing the manufacturing process of the manipulator.
FIG. 10 is a cross-sectional view showing the manufacturing process of the manipulator.
FIG. 11 is an explanatory diagram of a usage state of the micromanipulator.
12A is a side view of a microphone manipulator, and FIG. 12B is a plan view.
FIG. 13 is a perspective view showing a conventional micromanipulator.
[Explanation of symbols]
14, 15 ... finger members, 18 ... diffusion strain gauge, 16, 17 ... handling part,
DESCRIPTION OF SYMBOLS 21 ... Thin part, 22 ... 1st diffused resistance as temperature control means, 25 ... Temperature controller as control means, 26 ... 2nd diffused resistance as temperature detection means, W ... Target object.

Claims (6)

A micromanipulator having a handling unit for handling a minute object (W),
A pair of finger members (14, 15) for gripping the object (W);
A diffusion strain gauge (18) formed on at least one of the pair of finger members (14, 15) for detecting a force for gripping the object (W);
A micromanipulator provided integrally with temperature adjusting means (22) for adjusting the ambient temperature of the diffusion strain gauge in the vicinity of the diffusion strain gauge (18). A temperature detecting means (26) provided in the vicinity of the diffusion strain gauge (18) for detecting the ambient temperature of the diffusion strain gauge;
Control means (25) for controlling the temperature adjusting means (22) based on a temperature detection signal from the temperature detecting means (26) and controlling the ambient temperature of the diffusion strain gauge (18) to a predetermined temperature. The micromanipulator according to claim 1. The micromanipulator according to claim 1 or 2,
The micromanipulator characterized in that the temperature adjusting means (22) is provided between a handling part (16) provided on the distal end side of the finger member (14) and a diffusion strain gauge (18). The micromanipulator according to any one of claims 1 to 3,
A micromanipulator characterized in that a thin part (21) is formed on the base end side of the handling part (16) and a temperature adjusting means (22) is formed on the thin part (21). The micromanipulator according to any one of claims 1 to 4,
The micromanipulator characterized in that the finger members (14, 15) are formed of a single crystal silicon substrate, and the temperature adjusting means (22) is formed of a diffusion resistor. Forming an oxide film (32) on the surface side of the single crystal silicon substrate (31) to be the finger members (14, 15);
A diffusion strain gauge is formed by forming a plurality of windows (32a) in a predetermined region of the oxide film (32) on a side opposite to the tip portion side of the finger member and adding impurities from the windows (32a). (18) A method of manufacturing a micromanipulator, comprising: a step of forming a diffusion resistor serving as a temperature adjusting means.

Images