JP3829128B2 - Electron emitter - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to an electron-emitting device formed by a first electrode and a second electrode formed in an emitter portion and a slit therebetween.
[0002]
[Prior art]
Recently, an electron-emitting device has a cathode electrode and an anode electrode, and is applied to various applications such as a field emission display (FED) and a backlight. When applied to the FED, a plurality of electron-emitting devices are two-dimensionally arranged, and a plurality of phosphors for these electron-emitting devices are arranged with a predetermined interval.
[0003]
As conventional examples of this electron-emitting device, there are, for example, Patent Documents 1 to 5, but none of them uses a dielectric in the emitter portion, so that forming processing or fine processing is required between the opposing electrodes, or electron emission is performed. For this reason, a high voltage must be applied, and the panel manufacturing process is complicated and the manufacturing cost is high.
[0004]
Therefore, it is considered that the emitter portion is made of a dielectric, but various theories are described in the following Non-Patent Documents 1 to 3 as electron emission from the dielectric.
[0005]
[Patent Document 1]
JP-A-1-315333
[Patent Document 2]
JP 7-147131 A
[Patent Document 3]
JP 2000-285801 A
[Patent Document 4]
Japanese Patent Publication No.46-20944
[Patent Document 5]
Japanese Examined Patent Publication No. 44-26125
[Non-Patent Document 1]
Yasuoka, Ishii, "Pulsed electron source using a ferroelectric cathode" Applied Physics Vol.68, No.5, p546-550 (1999)
[Non-Patent Document 2]
V.F.Puchkarev, G.A.Mesyats, On the mechanism of emission from the ferroelectric ceramic cathode, J.Appl.Phys., Vol. 78, No. 9, 1 November, 1995, p. 5633-5637
[Non-Patent Document 3]
H.Riege, Electron emission ferroelectrics-a review, Nucl. Instr. And Meth. A340, p. 80-89 (1994)
[0006]
[Problems to be solved by the invention]
In the conventional electron-emitting device described above, electrons constrained by the surface of the dielectric, the interface between the dielectric and the upper electrode, and the defect level inside the dielectric are emitted by the polarization inversion of the dielectric. That is, as long as polarization reversal occurs in the dielectric, the amount of emitted electrons is almost constant regardless of the voltage level of the applied voltage pulse.
[0007]
However, there is a problem that the electron emission is not stable, the number of electron emission is up to about tens of thousands, and the practicality is poor. As described above, conventionally, an effect of an electron-emitting device having an emitter portion made of a dielectric material has not been found.
[0008]
According to the present invention, in an electron-emitting device having an emitter portion made of a dielectric material, damage to the first electrode due to electron emission can be suppressed, and the lifetime can be improved and the reliability can be improved. An object of the present invention is to provide an electron-emitting device that can be used.
[0009]
[Means for Solving the Problems]
  An electron-emitting device according to the present invention includes an emitter section made of a dielectric, a first electrode formed in contact with the emitter section, and formed in contact with the emitter section, together with the first electrode. A second electrode that forms a slit, and by applying a driving voltage between the first electrode and the second electrode, at least a portion of the emitter portion exposed from the slit is inverted in polarity. In the electron-emitting device that emits electrons, a charged film is formed on at least the surface of the second electrode.The
[0010]
  In this case, the emitter section can be composed of a piezoelectric material, an antiferroelectric material, or an electrostrictive material.The
[0011]
  When the width of the slit is d and the voltage between the first electrode and the second electrode is Vak, an electric field E applied to the emitter section and expressed by E = Vak / d You can make the polarization reversalYes.In this case, the voltage Vak is preferably less than the breakdown voltage of the emitter section.Yes.At this time, the width d of the slit may be set so that the absolute value of the voltage Vak between the first electrode and the second electrode is less than 100V.Yes.
[0012]
  Here, the electron multiplication effect associated with the electron emission and the influence on the first electrode will be described. First, when a drive voltage is applied between the first electrode and the second electrode, at least a portion exposed from the slit of the emitter portion is reversed in polarity, and the potential of the first electrode is lower than that of the second electrode. Electrons are emitted from the vicinity of the electrode.TheThat is, by this polarization reversal, a local concentrated electric field is generated between the first electrode and the positive side of the dipole moment in the vicinity thereof, whereby primary electrons are drawn from the first electrode, and the first electrode is extracted. Primary electrons extracted from the electrode collide with the emitter, and secondary electrons are emitted from the emitter.The
[0013]
  When the electron-emitting device has a triple point of the first electrode, a portion exposed from the slit of the emitter portion, and a vacuum atmosphere, primary electrons are emitted from a portion near the triple point of the first electrode. The extracted primary electrons collide with the emitter section, and secondary electrons are emitted from the emitter section.TheThe secondary electrons described here are energy obtained by Coulomb collision of primary electrons, electrons in solids that have jumped out of the emitter, Auger electrons, and primary electrons scattered near the surface of the emitter ( All of the reflected electrons). When the thickness of the first electrode is extremely thin (-10 nm), electrons are emitted from the interface between the first electrode and the emitter portion.
[0014]
Since electrons are emitted according to such a principle, electron emission is stably performed, and the number of electron emission times can be realized over 2 billion times, which is highly practical. In addition, since the amount of emitted electrons increases almost in proportion to the level of the drive voltage applied between the first electrode and the second electrode, there is an advantage that the amount of emitted electrons can be easily controlled.
[0015]
  When this electron-emitting device is used as a display pixel, for example, a third electrode is disposed above the emitter portion at a position facing the slit, and a phosphor is applied to the third electrode. To be doneTheIn this case, some of the emitted electrons are guided to the collector electrode to excite the phosphor, and the phosphor is emitted to the outside. Some other electrons are attracted to the second electrode.
[0016]
The electrons drawn to the second electrode mainly ionize the gas existing in the vicinity of the second electrode or the atoms constituting the second electrode into positive ions and electrons. The atoms constituting the second electrode existing in the vicinity of the second electrode are atoms generated as a result of evaporation of a part of the second electrode, and the atoms are located in the vicinity of the second electrode. It is floating. The electrons generated by the ionization further ionize the gas, the atoms, and the like, so that the number of electrons increases exponentially, and when this proceeds and the electrons and positive ions are neutral, a local plasma is formed.
[0017]
The voltage Vak between the first electrode and the second electrode at the time of electron emission is reduced to the discharge sustaining voltage level by the electron multiplication mechanism, and is in a short circuit state.
[0018]
The first electrode may be damaged when positive ions generated by the ionization collide with the first electrode, for example.
[0019]
Therefore, in the present invention, a charged film is formed at least on the surface of the second electrode. As described above, when a part of the electrons emitted from the emitter part is attracted to the second electrode, the surface of the charging film is charged negatively. As a result, the positive polarity of the second electrode is weakened, the strength of the electric field between the first electrode and the second electrode is reduced, and ionization stops instantaneously. That is, there is almost no change in voltage between the first electrode and the second electrode during electron emission. Therefore, there is almost no generation of positive ions, damage to the first electrode due to positive ions can be prevented, which is advantageous in extending the life of the electron-emitting device.
[0020]
  The charged film may be made of a piezoelectric material, an electrostrictive material, an antiferroelectric material, or a low dielectric constant material.Yes.As a low dielectric constant material, for example, SiO₂Or oxide such as MgO or glass can be used.TheOf course, the charging film may be made of the same material as the dielectric constituting the emitter section.Yes.
[0021]
  The thickness of the charging film formed on the surface of the second electrode is preferably 10 nm to 100 μm.Yes.If it is too thin, there is a risk of problems in durability and handling. If it is too thick, the distance between the first electrode and the second electrode, that is, the width of the slit cannot be reduced, and the electric field required for electron emission is reduced. It is because there is a possibility that it becomes impossible to obtain.
[0022]
  A protective film may be formed on the surface of the first electrode.Yes.In this case, the protective film may be made of the same material as the charged film.Yes.The protective film may be an insulator having a low sputtering rate and a high evaporation temperature in a vacuum, or a high-resistance conductor.Yes.The thickness of the protective film formed on the surface of the first electrode is preferably 10 to 100 nm.Yes.If it is too thin, there is a risk of problems in durability and handling. If it is too thick, electrons emitted from the electric field concentration point or electrons emitted from the interface between the first electrode and the emitter cannot pass through the protective film. Because there is a fear.
[0023]
  In the present invention, it is preferable that the voltage change between the first electrode and the second electrode during electron emission is within 20V.Yes.
[0024]
  In the present invention, both the first electrode and the second electrode may be formed on the upper surface of the emitter section, and the slit may be a gap.Yes.
[0025]
  In addition, the first electrode is formed in contact with one side surface of the emitter portion, the second electrode is formed in contact with the other side surface of the emitter portion, and the emitter portion is present in the slit. You can do itYes.
[0026]
When the slit is a gap, the width of the slit may be enlarged due to damage to the first electrode, and it may be difficult to lower the voltage of the drive signal. However, if the emitter is present in the slit, the first Even if the electrode is damaged, the width of the slit remains unchanged. As a result, stable electron emission at a constant voltage can be realized, and the life of the electrode can be extended.
[0027]
Further, since the emitter part is sandwiched between two electrodes, the emitter part can be completely polarized, and the electron emission by polarization inversion can be stably performed.
[0028]
  In particular, the emitter section is formed by meanderingso,Since the contact area between the first electrode and the emitter section and the area between the second electrode and the emitter section are increased, electrons can be efficiently emitted.
[0029]
  The emitter portion is formed on the upper surface of the substrate, the first electrode is formed in contact with one side surface of the emitter portion, and the second electrode is formed in contact with the other side surface of the emitter portion. When the emitter portion is present in the slit, a third electrode may be disposed above the substrate, and a phosphor may be coated on the upper surface of the third electrode.Yes.
[0030]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, some embodiments of the electron-emitting device according to the present invention will be described with reference to FIGS.
[0031]
First, the electron-emitting device according to the present embodiment can be applied not only as a display, but also to an electron beam irradiation device, a light source, an alternative use of LED, and an electronic component manufacturing apparatus.
[0032]
The electron beam in the electron beam irradiation apparatus has high energy and excellent absorption performance as compared with the ultraviolet light in the currently widely used ultraviolet irradiation apparatus. As application examples, in semiconductor devices, there are uses for solidifying insulating films when stacking wafers, uses for curing printing inks uniformly when printing is dried, and uses for sterilizing medical devices in packages. .
[0033]
The use as a light source is for high brightness and high efficiency specifications, for example, a light source use of a projector in which an ultra high pressure mercury lamp or the like is used. When the electron-emitting device according to this embodiment is applied to a light source, it has characteristics of downsizing, long life, high-speed lighting, and reduction of environmental load due to mercury-free.
[0034]
Alternative uses of LEDs include surface light source applications such as indoor lighting, automotive lamps, and traffic lights, and chip light sources, traffic lights, and backlights for small liquid crystal displays for mobile phones.
[0035]
Applications of the electronic component manufacturing apparatus include an electron beam source of a film forming apparatus such as an electron beam vapor deposition apparatus, an electron source for plasma generation (for activation of gas, etc.) in a plasma CVD apparatus, an electron source for gas decomposition application, etc. . In addition, there are vacuum microdevice applications such as terahertz drive high-speed switching elements and large current output elements. In addition, it is also preferably used as a printer component, that is, a light emitting device for exposing a photosensitive drum or an electron source for charging a dielectric.
[0036]
As electronic circuit components, a large current output and a high amplification factor are possible, and therefore there are applications to digital elements such as switches, relays, and diodes, and analog elements such as operational amplifiers.
[0037]
As shown in FIG. 1, the electron-emitting device 10 </ b> A according to the first embodiment includes an emitter section 14 formed on the substrate 12 and a first surface formed on one surface of the emitter section 14. It has an electrode (cathode electrode) 16 and a second electrode (anode electrode) 20 that is also formed on one surface of the emitter section 14 and forms a slit 18 together with the cathode electrode 16. A drive voltage Va from the pulse generation source 22 is applied to the cathode electrode 16 via a resistor R1. In the example of FIG. 1, the anode electrode 20 is connected to GND (ground), and the potential of the anode electrode 20 is set to zero. Of course, a potential other than zero potential may be used. .
[0038]
When this electron-emitting device 10A is used as a display pixel, a third electrode (collector electrode) 24 is disposed above the emitter section 14 at a position facing the slit 18, and the collector electrode 24 Is coated with a phosphor 28. A bias voltage source 102 (bias voltage Vc) is connected to the collector electrode 24 via a resistor R3.
[0039]
In addition, the electron-emitting device 10A according to the first embodiment is naturally disposed in the vacuum space. As shown in FIG. 1, the electron-emitting device 10A has electric field concentration points A and B. The point A includes a triple point where the cathode electrode 16 / emitter portion 14 / vacuum exists at one point. The point B can also be defined as a point including a triple point where the anode electrode 20 / emitter 14 / vacuum exists at one point.
[0040]
And the degree of vacuum in the atmosphere is 10²-10^-6Pa is preferred, more preferably 10^-3-10^-FiveIt is good that it is Pa.
[0041]
The reason for selecting such a range is that in low vacuum, (1): because there are a lot of gas molecules in the space, it is easy to generate plasma. There is a possibility of causing damage by colliding with 16 and (2): the emitted electrons collide with gas molecules before reaching the collector electrode 24, and the phosphor 28 is accelerated by electrons sufficiently accelerated at the collector potential (Vc). This is because excitation may not be sufficiently performed.
[0042]
On the other hand, in a high vacuum, electrons are likely to be emitted from the electric field concentration points A and B, but there is a problem in that the structure support and the vacuum seal portion become large, which is disadvantageous for miniaturization.
[0043]
Here, the emitter section 14 is made of a dielectric. As the dielectric, a dielectric having a relatively high relative dielectric constant, for example, 1000 or more can be adopted. In addition to barium titanate, such dielectrics include lead zirconate, lead magnesium niobate, lead nickel niobate, lead zinc niobate, lead manganese niobate, lead magnesium tantalate, lead nickel tantalate, Ceramics containing lead antimony stannate, lead titanate, lead magnesium tungstate, lead cobalt niobate, etc., or any combination thereof, those containing 50% by weight or more of these compounds as the main component, or the ceramics In addition to lanthanum, calcium, strontium, molybdenum, tungsten, barium, niobium, zinc, nickel, manganese, etc., or any combination of these, or those appropriately added with other compounds Can do.
[0044]
For example, in a two-component system nPMN-mPT of lead magnesium niobate (PMN) and lead titanate (PT) (where n and m are mole ratios), increasing the PMN mole ratio decreases the Curie point. Thus, the relative dielectric constant at room temperature can be increased.
[0045]
In particular, when n = 0.85 to 1.0 and m = 1.0−n, the relative dielectric constant is preferably 3000 or more. For example, when n = 0.91 and m = 0.09, a room temperature relative permittivity of 15000 is obtained, and when n = 0.95 and m = 0.05, a room temperature relative permittivity of 20000 is obtained.
[0046]
Next, in the three-component system of lead magnesium niobate (PMN), lead titanate (PT), and lead zirconate (PZ), besides increasing the molar ratio of PMN, tetragonal and pseudocubic or tetragonal crystals And a composition in the vicinity of a morphotropic phase boundary (MPB) of rhombohedral crystals are preferable for increasing the relative dielectric constant. For example, the relative dielectric constant is 5500 when PMN: PT: PZ = 0.375: 0.375: 0.25, and the relative dielectric constant is 4500 when PMN: PT: PZ = 0.5: 0.375: 0.125. Is particularly preferred. Furthermore, it is preferable to improve the dielectric constant by mixing a metal such as platinum into these dielectrics within a range where insulation can be ensured. In this case, for example, 20% by weight of platinum may be mixed in the dielectric.
[0047]
Further, as described above, a piezoelectric / electrostrictive layer, an antiferroelectric layer, or the like can be used for the emitter section 14. When a piezoelectric / electrostrictive layer is used as the emitter section 14, the piezoelectric / electrostrictive layer is used. For example, lead zirconate, lead magnesium niobate, lead nickel niobate, lead zinc niobate, lead manganese niobate, lead magnesium tantalate, lead nickel tantalate, lead antimony stannate, lead titanate, titanate Ceramics containing barium, lead magnesium tungstate, lead cobalt niobate, etc., or any combination thereof may be mentioned.
[0048]
It goes without saying that the main component may contain 50% by weight or more of these compounds. Among the ceramics, a ceramic containing lead zirconate is most frequently used as a constituent material of the piezoelectric / electrostrictive layer constituting the emitter section 14.
[0049]
Further, when the piezoelectric / electrostrictive layer is composed of ceramics, the ceramics may further include oxides such as lanthanum, calcium, strontium, molybdenum, tungsten, barium, niobium, zinc, nickel, manganese, or any of these. A combination of the above or other compounds as appropriate may be used.
[0050]
For example, it is preferable to use a ceramic containing, as a main component, a component composed of lead magnesium niobate, lead zirconate and lead titanate, and further containing lanthanum or strontium.
[0051]
The piezoelectric / electrostrictive layer may be dense or porous, and in the case of being porous, the porosity is preferably 40% or less.
[0052]
When an antiferroelectric layer is used as the emitter section 14, the antiferroelectric layer is mainly composed of lead zirconate, a component composed of lead zirconate and lead stannate, Furthermore, what added lanthanum oxide to lead zirconate, and what added lead zirconate and lead niobate to the component which consists of lead zirconate and lead stannate are desirable.
[0053]
The antiferroelectric film may be porous. In the case of being porous, the porosity is preferably 30% or less.
[0054]
Further, when strontium bismuthate tantalate is used for the emitter section 14, the polarization inversion fatigue is small and preferable. Such a material with low polarization reversal fatigue is a layered ferroelectric compound, (BiO₂)²⁺(A_m-1B_mO_{3m + 1})^2-It is expressed by the general formula. Here, the ions of metal A are Ca²⁺, Sr²⁺, Ba²⁺, Pb²⁺, Bi³⁺, La³⁺And the ion of metal B is Ti⁴⁺, Ta⁵⁺, Nb⁵⁺Etc.
[0055]
In addition, the sintering temperature can be lowered by mixing the piezoelectric / electrostrictive / antiferroelectric ceramics with a glass component such as lead borosilicate glass and other low melting point compounds (such as bismuth oxide). This is advantageous when the emitter section 14 is formed on the substrate 12.
[0056]
In addition, by using a lead-free material for the emitter portion 14 to make the emitter portion 14 a material having a high melting point or transpiration temperature, it becomes difficult to be damaged by the collision of electrons or ions.
[0057]
As a method of forming the emitter section 14 on the substrate 12, various thick film forming methods such as a screen printing method, a dipping method, a coating method, an electrophoresis method, an ion beam method, a sputtering method, a vacuum evaporation method, Various thin film forming methods such as ion plating, chemical vapor deposition (CVD), and plating can be used.
[0058]
In the first embodiment, when forming the emitter section 14 on the substrate 12, a thick film forming method such as a screen printing method, a dipping method, a coating method, or an electrophoresis method is preferably employed.
[0059]
These methods can be formed using pastes or slurries, or suspensions, emulsions, sols, or the like mainly composed of piezoelectric ceramic particles having an average particle diameter of 0.01 to 5 μm, preferably 0.05 to 3 μm. This is because good piezoelectric operation characteristics can be obtained.
[0060]
In particular, the electrophoretic method is capable of forming a film with high density and high shape accuracy, as well as “electrochemistry and industrial physical chemistry Vol. 53, No. 1 (1985), p 63-68 Kazuo Anzai. The authors have the characteristics described in the technical literature such as “Hirotsu” or “The 1st Electrophoresis Method for High-Order Forming of Ceramics Research Discussion (1998), p5-6, p23-24”. Further, a piezoelectric / electrostrictive / antiferroelectric material formed into a sheet shape, a laminate thereof, or a laminate or adhesion of these to another support substrate may be used. As described above, it is preferable to select and use a method as appropriate in consideration of required accuracy and reliability.
[0061]
Here, the size of the width d of the slit 18 between the cathode electrode 16 and the anode electrode 20 will be described. The voltage between the cathode electrode 16 and the anode electrode 20 (the drive voltage Va output from the pulse generation source 22 is the cathode electrode 16). When the voltage between the cathode electrode 16 and the anode electrode 20 is Vak), the polarization inversion is performed by the electric field E represented by E = Vak / d. The width d is preferably set. That is, as the width d of the slit 18 is smaller, polarization inversion can be performed at a lower voltage, and electrons can be emitted by driving at a lower voltage (for example, less than 100 V).
[0062]
The cathode electrode 16 is made of the following material. That is, a conductor having a low sputtering rate and a high evaporation temperature in a vacuum is preferable. For example, Ar⁺The sputtering rate at 600V is 2.0 or less and the vapor pressure is 1.3 × 10^-3A temperature at which Pa becomes 1800 K or higher is preferable, and platinum, molybdenum, tungsten, and the like correspond to this. Also, a conductor having resistance to a high-temperature oxidizing atmosphere, such as a simple metal, an alloy, a mixture of insulating ceramics and a simple metal, a mixture of insulating ceramics and an alloy, etc., preferably platinum, iridium, It is composed of a high melting point noble metal such as palladium, rhodium or molybdenum, an alloy containing silver-palladium, silver-platinum or platinum-palladium as a main component, or a cermet material of platinum and a ceramic material. More preferably, it is made of a material mainly composed of platinum or a platinum-based alloy. Further, carbon and graphite materials such as diamond thin film, diamond-like carbon, and carbon nanotube are also preferably used as the electrode. In addition, about 5-30 volume% is suitable for the ratio of the ceramic material added in electrode material.
[0063]
Furthermore, it is preferable to use a material such as an organometallic paste that can obtain a thin film after firing, such as a platinum resinate paste. Also, oxide electrodes that suppress polarization reversal fatigue, such as ruthenium oxide, iridium oxide, strontium ruthenate, La_1-xSr_xCoO_Three(For example, x = 0.3 or 0.5), La_1-xCa_xMnO_Three, La_1-xCa_xMn_1-yCo_yO_Three(For example, x = 0.2, y = 0.05), or a mixture of these with, for example, a platinum resinate paste is preferable.
[0064]
The cathode electrode 16 is made of the above-described materials using various thick film forming methods such as screen printing, spraying, coating, dipping, coating, and electrophoresis, sputtering, ion beam, vacuum deposition, and ion plating. The film can be formed according to an ordinary film forming method by various thin film forming methods such as chemical vapor deposition (CVD) and plating, and preferably the former thick film forming method. In addition, about the dimension of the cathode electrode 16, as shown in FIG. 2, width W1 was 2 mm and length L1 was 5 mm. The thickness of the cathode electrode 16 may be 20 μm or less, and preferably 5 μm or less.
[0065]
The anode electrode 20 is formed by the same material and method as the cathode electrode 16, but is preferably formed by the thick film forming method. The thickness of the anode electrode 20 is also preferably 20 μm or less, and preferably 5 μm or less. As for the dimensions of the anode electrode 20, as shown in FIG. 2, the width W2 was set to 2 mm and the length L2 was set to 5 mm similarly to the cathode electrode 16.
[0066]
In addition, the slit width d between the cathode electrode 16 and the anode electrode 20 is set to 70 μm in the first embodiment.
[0067]
In order to electrically separate the wiring electrically connected to the cathode electrode 16 and the wiring electrically connected to the anode electrode 20, the substrate 12 is preferably made of an electrically insulating material.
[0068]
Therefore, the substrate 12 can be made of glass, a high heat-resistant metal, or a material such as enamel whose metal surface is coated with a ceramic material such as glass, but it is optimal to make it with ceramics. .
[0069]
As the ceramic constituting the substrate 12, for example, stabilized zirconium oxide, aluminum oxide, magnesium oxide, titanium oxide, spinel, mullite, aluminum nitride, silicon nitride, glass, a mixture thereof, or the like can be used. Among these, aluminum oxide and stabilized zirconium oxide are preferable from the viewpoint of strength and rigidity. Stabilized zirconium oxide is particularly suitable from the viewpoints of relatively high mechanical strength, relatively high toughness, and relatively small chemical reaction with the cathode electrode 16 and the anode electrode 20. The stabilized zirconium oxide includes stabilized zirconium oxide and partially stabilized zirconium oxide. Stabilized zirconium oxide has a cubic crystal structure or the like and therefore does not cause phase transition.
[0070]
On the other hand, zirconium oxide undergoes a phase transition between a monoclinic crystal and a tetragonal crystal at around 1000 ° C., and cracks may occur during such a phase transition. Stabilized zirconium oxide contains 1 to 30 mol% of a stabilizer such as calcium oxide, magnesium oxide, yttrium oxide, scandium oxide, ytterbium oxide, cerium oxide, and rare earth metal oxides. In order to improve the mechanical strength of the substrate 12, the stabilizer preferably contains yttrium oxide. In this case, yttrium oxide is preferably contained in an amount of 1.5 to 6 mol%, more preferably 2 to 4 mol%, and further preferably 0.1 to 5 mol% of aluminum oxide.
[0071]
The crystal phase can be a cubic + monoclinic mixed phase, a tetragonal + monoclinic mixed phase, a cubic + tetragonal + monoclinic mixed phase, and the like. A phase having a tetragonal crystal or a mixed phase of tetragonal crystal + cubic crystal is optimal from the viewpoint of strength, toughness and durability.
[0072]
When the substrate 12 is made of ceramics, a relatively large number of crystal grains constitute the substrate 12. In order to improve the mechanical strength of the substrate 12, the average grain size of the crystal grains is preferably 0.05. ˜2 μm, more preferably 0.1-1 μm.
[0073]
Each time the emitter part 14, the cathode electrode 16 and the anode electrode 20 are formed, a heat treatment (firing process) can be performed to form an integral structure with the substrate 12, and the emitter part 14, the cathode electrode 16 and the anode electrode 20 can be integrated. After the formation, they can be fired at the same time, and these can be integrally bonded to the substrate 12 at the same time. Depending on the method of forming the cathode electrode 16 and the anode electrode 20, heat treatment (firing treatment) for integration may not be required.
[0074]
The temperature related to the baking treatment for integrating the substrate 12, the emitter section 14, the cathode electrode 16, and the anode electrode 20 is in the range of 500 to 1400 ° C, preferably in the range of 1000 to 1400 ° C. . Further, when the film-shaped emitter portion 14 is heat-treated, it is preferable to perform a baking process while controlling the atmosphere together with the evaporation source of the emitter portion 14 so that the composition of the emitter portion 14 does not become unstable at high temperatures.
[0075]
Alternatively, a method may be employed in which the emitter portion 14 is covered with an appropriate member and fired so that the surface of the emitter portion 14 is not directly exposed to the firing atmosphere. In this case, it is preferable to use the same material as the substrate 12 as the covering member.
[0076]
Next, the principle of electron emission of the electron emitter 10A will be described with reference to FIGS. First, as shown in FIG. 3, the drive voltage Va output from the pulse generation source 22 includes a period during which the first voltage Va1 is output (preparation period T1) and a period during which the second voltage Va2 is output (electronic The release period T2) is one step and the one step is repeated. The first voltage Va1 is a voltage in which the potential of the cathode electrode 16 is higher than the potential of the anode electrode 20, and the second voltage Va2 is a voltage in which the potential of the cathode electrode 16 is lower than the potential of the anode electrode 20. The amplitude Vin of the drive voltage Va can be defined by a value obtained by subtracting the second voltage Va2 from the first voltage Va1 (= Va1-Va2).
[0077]
As shown in FIG. 4, the preparation period T <b> 1 is a period in which the emitter section 14 is polarized by applying the first voltage Va <b> 1 between the cathode electrode 16 and the anode electrode 20. As the first voltage Va1, a DC voltage may be used as shown in FIG. 3, but one pulse voltage or a pulse voltage may be continuously applied a plurality of times. Here, the preparation period T1 is preferably longer than the electron emission period T2 in order to sufficiently perform the polarization process. For example, the preparation period T1 is preferably 100 μsec or more. This is because the absolute value of the first voltage Va1 for polarization is calculated from the absolute value of the second voltage Va2 for the purpose of preventing power consumption during the application of the first voltage Va1 and damage to the cathode electrode 16. This is because it is set to be small.
[0078]
Further, the first voltage Va1 and the second voltage Va2 are preferably voltage levels at which polarization processing can be reliably performed with positive and negative polarities, for example, the dielectric of the emitter section 14 has a coercive voltage. In this case, the absolute values of the first voltage Va1 and the second voltage Va2 are preferably equal to or greater than the coercive voltage.
[0079]
The electron emission period T2 is a period during which the second voltage Va2 is applied between the cathode electrode 16 and the anode electrode 20. By applying the second voltage Va2 between the cathode electrode 16 and the anode electrode 20, as shown in FIG. 5A, at least a portion of the emitter portion 14 exposed from the slit 18 is inverted. As a result of this polarization reversal, a local concentrated electric field is generated between the cathode electrode 16 and the positive pole side of the dipole moment in the vicinity thereof, whereby primary electrons are drawn from the cathode electrode 16, and as shown in FIG. Primary electrons extracted from the cathode electrode 16 collide with the emitter section 14, and secondary electrons are emitted from the emitter section 14.
[0080]
When the electron-emitting device 10A has the cathode electrode 16, the emitter section 14, and the vacuum triple point A as in this embodiment, primary electrons are extracted from the vicinity of the triple point A in the cathode electrode 16. As a result, primary electrons extracted from the triple point A collide with the emitter section 14 and secondary electrons are emitted from the emitter section 14. When the thickness of the cathode electrode 16 is extremely thin (˜10 nm), electrons are emitted from the interface between the cathode electrode 16 and the emitter section 14.
[0081]
Here, the electron multiplication effect accompanying the electron emission and the influence on the cathode electrode 16 will be described. First, when the negative voltage Va2 is supplied to the cathode electrode 16, secondary electrons are emitted from the emitter section 14 as described above.
[0082]
Among the emitted secondary electrons, some of the secondary electrons are guided to the collector electrode 24 to excite the phosphor 28 and are realized as phosphor emission outside. Some other secondary electrons and primary electrons are attracted to the anode electrode 20.
[0083]
Here, the emission distribution of secondary electrons will be described. As shown in FIG. 6, the majority of secondary electrons have an energy close to 0, and when emitted from the surface of the emitter section 14 in a vacuum, the secondary electrons move only according to the surrounding electric field distribution. . That is, secondary electrons are accelerated according to the surrounding electric field distribution from a state where the initial velocity is almost 0 (m / sec). For this reason, as shown in FIG. 5B, if an electric field Ea is generated between the emitter section 14 and the collector electrode 24, the emission trajectory of the secondary electrons is determined along the electric field Ea. That is, an electron source with high straightness can be realized. Such secondary electrons with a small initial velocity are electrons in the solid that have gained energy by Coulomb collision of the primary electrons and jumped out of the emitter section 14.
[0084]
By the way, as can be seen from FIG.₀Secondary electrons having energy corresponding to are emitted. The secondary electrons are those in which the primary electrons emitted from the cathode electrode 16 are scattered near the surface of the emitter section 14 (reflected electrons).
[0085]
When the cathode electrode 16 is thicker than 10 nm, most of the reflected electrons are directed to the anode electrode 20. The secondary electrons described in this specification are defined to include the reflected electrons and Auger electrons.
[0086]
On the other hand, when the thickness of the cathode electrode 16 is extremely thin (˜10 nm), the primary electrons emitted from the cathode electrode 16 are reflected at the interface between the cathode electrode 16 and the emitter section 14 and travel toward the collector electrode 24. Become.
[0087]
The electrons drawn by the anode electrode 20 ionize mainly the gas existing in the vicinity of the anode electrode 20 or the atoms constituting the anode electrode 20 into positive ions and electrons. The atoms constituting the anode electrode 20 existing in the vicinity of the anode electrode 20 are atoms generated as a result of evaporation of a part of the anode electrode 20, and the atoms are floating in the vicinity of the anode electrode 20. The electrons generated by the ionization further ionize the gas, the atoms, and the like, so that the number of electrons increases exponentially, and when this proceeds and the electrons and positive ions are neutral, a local plasma is formed.
[0088]
Further, the electrons drawn to the anode electrode 20 collide with the emitter section 14 and secondary electrons are emitted from the emitter section, and in the same way as described above, in the gas existing near the anode electrode 20 or in the vicinity of the anode electrode 20. Electrode atoms that evaporate and float are ionized into positive ions and electrons.
[0089]
As shown in FIG. 7A, when the driving voltage Va applied between the cathode electrode 16 and the anode electrode 20 is, for example, when the first voltage Va1 is + 50V and the second voltage Va2 is −100V, for example, As shown in FIG. 7B, the voltage Vak between the anode electrodes 20 emits electrons at the peak time point P1, and then decreases to the level of the sustaining voltage Vb by the progress of the ionization and becomes a state close to a short circuit. Yes. In addition to the case where the discharge sustaining voltage Vb is larger than the coercive voltage (for example, −20 V) of the dielectric (emitter portion 14), it can be considered to be small. Note that the change ΔVak in voltage between the cathode electrode 16 and the anode electrode 20 during electron emission is approximately 50V.
[0090]
Here, the dielectric breakdown voltage of the emitter section 14 is preferably at least 10 kV / mm or more. In this example, when the width d of the slit 18 is 70 μm, for example, even if a drive voltage of −100 V is applied between the cathode electrode 16 and the anode electrode 20, the portion exposed from the slit 18 in the emitter portion 14 is insulated. There is no destruction.
[0091]
The positive electrode generated by the ionization may collide with the cathode electrode 16, for example, and the cathode electrode 16 may be damaged.
[0092]
Therefore, in the first embodiment, the charging film 40 is formed on the surface of the anode electrode 20 as shown in FIGS.
[0093]
Therefore, when some of the secondary electrons emitted from the emitter section 14 are attracted to the anode electrode 20, the surface of the charging film 40 is negatively charged as shown in FIG. As a result, the positive polarity of the anode electrode 20 is weakened, the intensity E of the electric field between the anode electrode 20 and the cathode electrode 16 is reduced, and ionization stops instantaneously. That is, as shown in FIG. 9A, when the driving voltage Va applied between the cathode electrode 16 and the anode electrode 20 is, for example, the first voltage Va1 is set to + 50V and the second voltage Va2 is set to -100V, for example, the electron emission The voltage change ΔVak between the cathode electrode 16 and the anode electrode 20 at the peak time point P1 at which is performed is within 20V (about 10V in the example of FIG. 9B) and hardly changes. Therefore, there is almost no generation of positive ions, damage to the cathode electrode 16 due to positive ions can be prevented, which is advantageous in extending the life of the electron-emitting device 10A.
[0094]
The thickness t1 of the charging film 40 formed on the surface of the anode electrode 20 is preferably 10 nm to 100 μm. If it is too thin, there is a risk of problems in durability and handling. If it is too thick, the distance between the cathode electrode 16 and the anode electrode 20, that is, the width d of the slit cannot be reduced, and the electric field necessary for electron emission is reduced. This is because it may not be obtained. In the first embodiment, the thickness t1 of the charging film 40 is 45 μm.
[0095]
The charged film 40 can be composed of a piezoelectric material, an electrostrictive material, an antiferroelectric material, or a low dielectric constant material. As a low dielectric constant material, for example, SiO₂An oxide such as MgO or glass or glass can be used. Of course, the charging film 40 may be made of the same material as that of the dielectric constituting the emitter section 14.
[0096]
Further, a protective film 42 may be formed on the surface of the cathode electrode 16 as in the electron-emitting device 10Aa according to the modification of FIG. The protective film 42 may be made of the same material as that of the charging film 40, or may be an insulator having a low sputtering rate and a high evaporation temperature in a vacuum, or a high resistance conductor.
[0097]
The thickness of the protective film 42 is preferably 10 to 100 nm. If it is too thin, there is a risk of problems in durability and handling, and if it is too thick, electrons emitted from the electric field concentration point A or the interface between the cathode electrode 16 and the emitter section 14 may not be able to pass through the protective film 42. Because. The protective film 42 can be made of the same material as the charging film 40. Thereby, the formation of the charging film 40 and the formation of the protective film 42 can be performed in the same process, and the manufacturing process can be simplified.
[0098]
Furthermore, the electric field distribution between the emitter section 14 and the collector electrode 24 can be changed by appropriately changing the pattern shape and potential of the collector electrode 24 or by arranging a control electrode (not shown) between the emitter section 14 and the collector electrode 24. By arbitrarily setting, it becomes easy to control the emission trajectory of secondary electrons, and the convergence, expansion, and deformation of the electron beam diameter are also facilitated.
[0099]
The above-described realization of an electron source with high linearity and ease of control of the secondary electron emission trajectory are obtained when the electron-emitting device 10A according to the first embodiment is configured as a pixel of a display. This is advantageous for narrowing the pitch.
[0100]
Next, an electron emitter 10B according to a second embodiment will be described with reference to FIG.
[0101]
In the electron-emitting device 10B according to the second embodiment, as shown in FIG. 11, an emitter section 14 having a width d of, for example, 0.1 to 50 μm is formed on a substrate 12, and one of the emitter sections 14 is formed. A cathode electrode 16 is formed on the side surface, and an anode electrode 20 is formed on the other side surface of the emitter section 14. That is, the emitter portion 14 exists in the slit 18 between the cathode electrode 16 and the anode electrode 20, and the emitter portion 14 is sandwiched between the cathode electrode 16 and the anode electrode 20.
[0102]
Also in this case, the charging film 40 is formed on the surface of the anode electrode 20 as in the first embodiment. Of course, as shown in FIG. 11, a protective film 42 may be formed on the cathode electrode 16.
[0103]
In the electron-emitting device 10B according to the second embodiment, as with the electron-emitting device 10A according to the first embodiment, damage to the cathode electrode 16 can be prevented and a dielectric is used. Since the emitter portion 14 is sandwiched between the cathode electrode 16 and the anode electrode 20, the polarization at the emitter portion 14 can be performed completely, and the electron emission due to the polarization inversion can be stably performed. It can be done efficiently.
[0104]
Next, three modifications of the electron-emitting device 10B according to the second embodiment will be described with reference to FIGS.
[0105]
First, the electron-emitting device 10Ba according to the first modification is an example that follows the concept of the electron-emitting device 10B according to the second embodiment. As shown in FIGS. 14 is formed in a meandering shape when viewed from above.
[0106]
With such a configuration, the contact area between the cathode electrode 16 and the emitter section 14 and the contact area between the anode electrode 20 and the emitter section 14 are increased, so that electrons can be efficiently emitted. Also in this case, the charging film 40 is formed on the surface of the anode electrode 20. Of course, as shown in FIGS. 12 and 13, a protective film 42 may be formed on the cathode electrode 16.
[0107]
As shown in FIG. 14, an electron emitter 10 </ b> Bb according to the second modification includes an emitter portion 14 made of a dielectric on a substrate 12, and a cathode electrode 16 and an anode in a window formed in the emitter portion 14. The electrode 20 is embedded and formed. Thus, by increasing the electrode cross-sectional areas of the cathode electrode 16 and the anode electrode 20, it is possible to reduce the resistance of the cathode electrode 16 and the anode electrode 20 and to suppress the generation of Joule heat. That is, the cathode electrode 16 and the anode electrode 20 can be protected. Also in this case, the charging film 40 is formed on the surface of the anode electrode 20. Of course, a protective film 42 may be formed on the cathode electrode 16 as shown in FIG.
[0108]
In the second modification described above, an example in which the thickness of the cathode electrode 16 and the anode electrode 20 is made substantially the same as the thickness of the emitter section 14 is shown, but in addition, the third modification shown in FIGS. Like the electron-emitting device 10Bc, the cathode electrode 16 and the anode electrode 20 may be made thinner than the emitter portion 14. In this case, similarly to the electron-emitting device 10B according to the second embodiment shown in FIG. 11, the cathode electrode 16 and the anode electrode 20 of the emitter portion 14 existing at least in the slit 18 portion of the emitter portion 14. It is formed in contact with the side wall. Also in this case, the charging film 40 is formed on the surface of the anode electrode 20. Of course, a protective film 42 may be formed on the cathode electrode 16 as shown in FIG.
[0109]
In the third modification, as in the first modification, the cathode electrode 16 and the anode electrode 20 can be configured by reducing the amount of metal, so that the cathode electrode 16 and the anode electrode 20 are expensive. A metal (for example, platinum or gold) can be used, and the characteristics can be improved.
[0110]
In the electron-emitting devices 10A and 10B (including the modifications) according to the first and second embodiments described above, as shown in FIG. 1, a phosphor 28 is applied to the collector electrode 24 to display pixels. When configured as described above, the following effects can be obtained.
[0111]
(1) It can be made ultra-thin (panel thickness = several mm) as compared with CRT.
[0112]
(2) Due to spontaneous light emission by the phosphor 28, a wide viewing angle of approximately 180 ° can be obtained as compared with LCD (Liquid Crystal Display) and LED (Light Emitting Diode).
[0113]
(3) Since a surface electron source is used, there is no image distortion as compared with a CRT.
[0114]
(4) High-speed response is possible as compared with LCD, and moving image display without afterimage is possible with a high-speed response on the order of μsec.
[0115]
(5) It is about 100 W in terms of 40 inches, and consumes less power than CRT, PDP (plasma display), LCD and LED.
[0116]
(6) Wide operating temperature range (-40 to + 85 ° C) compared to PDP and LCD. Incidentally, the response speed of the LCD decreases at low temperatures.
[0117]
(7) Since the phosphor can be excited by a large current output, the brightness can be increased as compared with a conventional FED display.
[0118]
(8) Since the driving voltage can be controlled by the polarization reversal characteristics and film thickness of the piezoelectric material, it can be driven at a lower voltage than a conventional FED display.
[0119]
From such various effects, various display applications can be realized as described below.
[0120]
(1) It is most suitable for 30-60 inch display home use (television, home theater) and public use (waiting room, karaoke, etc.) in terms of realizing high brightness and low power consumption.
[0121]
(2) From the aspect that high brightness, large screen, full color, and high definition can be realized, it has a great effect on customer attraction (in this case, visual attention). Ideal for use in exhibitions, message boards for information guides.
[0122]
(3) It is most suitable for in-vehicle displays from the viewpoint that high brightness, a wide viewing angle accompanying phosphor excitation, and a wide operating temperature range associated with vacuum modularization can be realized. The specifications for the in-vehicle display are: 8 inches wide (pixel pitch: 0.14 mm) such as 15: 9, operating temperature of -30 to + 85 ° C., 500 to 600 cd / m in the perspective direction.²is required.
[0123]
In addition, from the various effects described above, various light source applications can be realized as described below.
[0124]
(1) From the standpoint that high luminance and low power consumption can be realized, it is most suitable for a light source for a projector that requires 2000 lumens as a luminance specification.
[0125]
(2) A high-brightness two-dimensional array light source can be easily realized, the operating temperature range is wide, and the luminous efficiency does not change even in an outdoor environment. For example, it is optimal as an alternative to a two-dimensional array LED module such as a traffic light. Note that the LED has a lower allowable current at a temperature of 25 ° C. or higher and low luminance.
[0126]
Note that the electron-emitting device according to the present invention is not limited to the above-described embodiment, but can of course have various configurations without departing from the gist of the present invention.
[0127]
【The invention's effect】
As described above, according to the electron-emitting device according to the present invention, in the electron-emitting device having the emitter portion made of a dielectric, it is possible to suppress damage at the first electrode due to electron emission. In addition, the lifetime can be improved and the reliability can be improved.
[Brief description of the drawings]
FIG. 1 is a configuration diagram showing an electron-emitting device according to a first embodiment.
FIG. 2 is a plan view showing an electrode portion of the electron-emitting device according to the first embodiment.
FIG. 3 is a waveform diagram showing a drive voltage output from a pulse generation source.
FIG. 4 is an explanatory diagram showing an operation when a first voltage is applied between a cathode electrode and an anode electrode.
FIG. 5A is an explanatory view showing an action (emission of primary electrons) when a second voltage is applied between the cathode electrode and the anode electrode, and FIG. 5B shows the emitted primary electrons; It is explanatory drawing which shows the principle in which a secondary electron is discharge | released based on.
FIG. 6 is a characteristic diagram showing the relationship between the energy of emitted secondary electrons and the amount of emitted secondary electrons.
FIG. 7A is a waveform diagram illustrating an example of a drive voltage, and FIG. 7B is a waveform diagram illustrating a change in voltage between the cathode electrode and the anode electrode in a configuration in which a charging film is not formed on the anode electrode.
FIG. 8 is an explanatory diagram showing an operation when a second voltage is applied between the cathode electrode and the anode electrode in the electron-emitting device according to the first embodiment.
FIG. 9A is a waveform diagram showing an example of a drive voltage, and FIG. 9B is a waveform diagram showing a change in voltage between the cathode electrode and the anode electrode in the electron-emitting device according to the first embodiment. is there.
FIG. 10 is a configuration diagram showing a modification of the electron-emitting device according to the first embodiment.
FIG. 11 is a configuration diagram showing a main part of an electron-emitting device according to a second embodiment.
FIG. 12 is a plan view showing a first modification of the electron-emitting device according to the second embodiment.
13 is a cross-sectional view taken along line XIII-XIII in FIG.
FIG. 14 is a cross-sectional view showing a second modification of the electron-emitting device according to the second embodiment.
FIG. 15 is a cross-sectional view showing a third modification of the electron-emitting device according to the second embodiment.
FIG. 16 is a plan view showing a third modification of the electron-emitting device according to the second embodiment.
[Explanation of symbols]
10A, 10Aa, 10B, 10Ba to 10Bc ... electron-emitting devices
12 ... Substrate 14 ... Emitter
16 ... Cathode electrode 18 ... Slit
20 ... Anode electrode 22 ... Pulse generation source
24 ... Collector electrode 28 ... Phosphor
40 ... charged film 42 ... protective film

Claims (18)

An emitter section made of a dielectric;
A first electrode formed in contact with the emitter portion;
A second electrode formed in contact with the emitter and forming a slit together with the first electrode;
In the electron-emitting device that emits electrons by applying a driving voltage between the first electrode and the second electrode so that at least a portion of the emitter portion exposed from the slit is inverted,
A charged film is formed on at least the surface of the second electrode;
By applying the drive voltage between the first electrode and the second electrode, at least a portion of the emitter portion exposed from the slit is inverted, and this polarization inversion causes the first electrode to By arranging the positive pole side of the dipole moment in the periphery, primary electrons are extracted from the first electrode,
An electron-emitting device comprising drive voltage application means for causing primary electrons extracted from the first electrode to collide with the emitter portion to emit secondary electrons from the emitter portion. The electron-emitting device according to claim 1.
The electron emitter according to claim 1, wherein the emitter is made of a piezoelectric material, an antiferroelectric material, or an electrostrictive material. The electron-emitting device according to claim 1 or 2,
When the slit width is d and the voltage between the first electrode and the second electrode is Vak, the polarization is inverted by the electric field E applied to the emitter and expressed by E = Vak / d. An electron-emitting device characterized in that The electron-emitting device according to claim 3.
The electron-emitting device, wherein the voltage Vak is less than a breakdown voltage of the emitter section. The electron-emitting device according to claim 3 or 4,
The electron-emitting device, wherein a width d of the slit is set so that an absolute value of a voltage Vak between the first electrode and the second electrode is less than 100V. The electron-emitting device according to any one of claims 1 to 5,
The electron-emitting device, wherein the charging film is made of a piezoelectric material, an electrostrictive material, an antiferroelectric material , SiO ₂ , MgO, or glass . The electron-emitting device according to any one of claims 1 to 6 ,
The electron-emitting device, wherein the charging film is made of the same material as that of the dielectric constituting the emitter section. The electron-emitting device according to any one of claims 1 to 7 ,
The electron-emitting device, wherein the charging film has a thickness of 10 nm to 100 μm. The electron-emitting device according to any one of claims 1 to 8 ,
An electron-emitting device, wherein a protective film is formed on a surface of the first electrode. The electron-emitting device according to claim 9 , wherein
The electron-emitting device, wherein the protective film is made of the same material as the charged film. The electron-emitting device according to claim 9 or 10 ,
The electron-emitting device, wherein the protective film has a thickness of 10 to 100 nm. The electron-emitting device according to any one of claims 1 to 11 ,
An electron-emitting device, wherein a voltage change between the first electrode and the second electrode during electron emission is within 20V. The electron-emitting device according to any one of claims 1 to 12 ,
The first electrode and the second electrode are both formed on the upper surface of the emitter section,
The electron-emitting device, wherein the slit is a gap. The electron-emitting device according to any one of claims 1 to 12 ,
The first electrode is formed in contact with one side surface of the emitter section,
The second electrode is formed in contact with the other side surface of the emitter section,
An electron-emitting device, wherein the emitter is present in the slit. The electron-emitting device according to claim 14 ,
An electron-emitting device characterized in that the emitter section is meandered. The electron-emitting device according to any one of claims 1 to 15 ,
When the drive voltage is applied between the first electrode and the second electrode, at least a portion exposed from the slit of the emitter section is inverted, and the potential is lower than that of the second electrode. An electron-emitting device characterized in that electrons are emitted from the vicinity of the first electrode. The electron-emitting device according to any one of claims 1 to 16 ,
The first electrode, the portion exposed from the slit of the emitter portion and a triple point of a vacuum atmosphere,
Primary electrons are extracted from the portion near the triple point of the first electrode,
An electron-emitting device, wherein the extracted primary electrons collide with the emitter portion and secondary electrons are emitted from the emitter portion. The electron-emitting device according to any one of claims 1 to 17 ,
An electron-emitting device, wherein a third electrode is disposed at least at a position facing the slit above the emitter portion, and a phosphor is applied to the third electrode.

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