JP3819306B2 - Bonded body of semiconductor element and supporting substrate, and method for manufacturing the semiconductor device - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
  The present invention relates to a semiconductor element and a semiconductor device suitable for a thin semiconductor package, and a method for manufacturing the semiconductor device.
[0002]
[Prior art]
  In recent years, especially with the downsizing of electronic devices such as mobile products, circuits and substrates have become thinner. As a result, high-density mounting must be performed in the semiconductor device inside the electronic apparatus. For this reason, a flexible circuit board that can be bent is used.
[0003]
  By the way, conventionally used semiconductor packages (semiconductor devices) such as DIP (Dual In-line Package), QFP (Quad Flat Package), and BGA (Ball Grid Array) have a semiconductor element as a flexible circuit board. After electrical connection (mounting) by performing wire bonding or the like, the semiconductor element is covered with epoxy resin or the like to protect the wire.
  As described above, when the semiconductor element is sealed with an epoxy resin after the semiconductor element is mounted on the flexible circuit board, the thickness of the semiconductor package is increased and the semiconductor package is hardly bent.
[0004]
  That is, resin-encapsulated semiconductor packages such as DIP, QFP, and BGA are thick and difficult to bend.
[0005]
  Japanese Patent Application Laid-Open No. 6-64379 describes the configuration of an IC card (semiconductor device) on which a semiconductor chip that is resistant to bending and bending is mounted by thinning the semiconductor chip.
[0006]
  The semiconductor chip in this IC card is flip-chip connected to the flexible circuit board.
[0007]
  Japanese Laid-Open Patent Publication No. 2000-11129 describes a configuration of an IC card (semiconductor device) in which a semiconductor chip is flip-chip connected to a mounting substrate via an anisotropic conductive sheet.
[0008]
  In this semiconductor chip, a protruding electrode is formed on an external extraction electrode. By aligning the protruding electrodes and the electrodes on the circuit board and curing an anisotropic conductive sheet (ACF) as an adhesive resin between them, mounting of the semiconductor chip by flip chip connection is possible. Do.
[0009]
  Thereby, the semiconductor chip can be thinned to, for example, 100 μm or less, and a semiconductor chip that is strong against bending and bending can be provided.
[0010]
  As described above, a semiconductor package which is a semiconductor device on which a semiconductor element is mounted using a flip chip connection method is very thin as compared with a resin-encapsulated semiconductor package, and thus can be curved. Thereby, even if the region to which the semiconductor package is attached is a curved surface, the semiconductor package can be attached along the curved surface.
[0011]
  As described above, the semiconductor element to be flip-chip connected can be thinned, and the thinner the semiconductor chip, the better the thinning of the semiconductor device and the miniaturization of the electronic device.
[0012]
  However, a very thin semiconductor element of 100 μm or less is highly likely to be damaged and is very difficult to handle. That is, it is difficult to handle the semiconductor element when it is transported or mounted on the circuit board, and the productivity may be reduced.
[0013]
  When the semiconductor element is thin, the flip chip connection method using ACF or ACP (Anisotropic Conductive Paste), which applies pressure during mounting, easily breaks the semiconductor chip.
[0014]
  Therefore, in order to increase the strength of such a thin semiconductor element, Japanese Patent Application No. 11-74230 discloses a method of manufacturing a semiconductor device in which a reinforcing member is attached to the back surface of a semiconductor element with a resin or the like and then peeled off later. A method is described.
[0015]
  FIG. 7 shows the configuration of the semiconductor device before the reinforcing member is peeled off. In this semiconductor device, a semiconductor element having a support plate (reinforcing member) 101, an adhesive 103, a circuit component 104, a passivation film 105, and a bump (projection electrode) 106 is mounted on a mounting substrate 102 having electrode pads 107. Flip chip connection is performed using ACF108. Here, the adhesive 103 is made of a material capable of reducing the adhesive force.
[0016]
  Thereafter, the adhesive 103 and the support plate 101 are peeled off by reducing the adhesive force of the adhesive 103. For this reason, in the manufacturing process, since the support plate 101 which is a reinforcing member is included, the strength of the semiconductor element is high. In addition, a semiconductor device including a thin semiconductor element can be provided by peeling the adhesive 103 and the support plate 101 after mounting the semiconductor element on the mounting substrate 102.
[0017]
[Problems to be solved by the invention]
  However, in the semiconductor device shown in FIG. 7, since the support plate 101 is pasted using the adhesive 103, sufficient pressure is applied when connecting the mounting substrate 102 by applying pressure using the ACF 108. Does not join the connection. Therefore, a good connection state between the mounting substrate 102 and the semiconductor element cannot be maintained, and the reliability of the semiconductor element is lowered.
[0018]
  In addition, it is difficult to use an adhesive in ACF connection or solder reflow connection in which a high temperature of about 180 to 260 ° C. is applied during flip chip connection. On the other hand, if an adhesive having heat resistance is used as the adhesive, a peeling process for peeling the adhesive 103 and the support plate 101 later becomes complicated.
[0019]
  By the way, US Pat. No. 6,027,958 describes a structure in which a semiconductor element manufactured using an SOI (Silicon on insulator) substrate is bonded to a flexible substrate.
[0020]
  However, no specific method is described for the method of connecting the semiconductor element and the flexible substrate.
[0021]
  The present invention has been made in view of the above-described problems, and an object of the present invention is to provide a semiconductor element and a semiconductor device that are easy to handle and a method for manufacturing the semiconductor device while ensuring the strength of the semiconductor element. It is in.
[0022]
[Means for Solving the Problems]
  Semiconductor device of the present inventionAnd support substrateIn order to solve the above-mentioned problem, the circuit has a circuit component that constitutes the circuit on the surface.semiconductorA circuit board; andsemiconductorA support substrate that supports the circuit board via a support member, andsemiconductorThere is a gap between the circuit board and the support board.And a protrusion electrode for connecting the circuit to the outside is provided on the circuit component, and the support member and the support substrate are provided on a surface of the semiconductor circuit substrate opposite to the surface having the protrusion electrode. Is placedIt is characterized by that.
[0023]
  Usually, in order to reduce the thickness of a semiconductor device, for example, when a semiconductor element having a thickness of 100 μm or less is formed, the strength of the semiconductor element becomes weak and the possibility of breakage is high, and its handling is very difficult. That is, it is difficult to handle the semiconductor element when it is transported or when it is mounted on a mounting substrate (for example, a flexible circuit board) for mounting the semiconductor element, and the productivity of the semiconductor element is reduced.
[0024]
  However, according to the above configuration, the support substrate serves as a reinforcing member for the circuit substrate having the circuit component on the surface.
[0025]
  In other words, during transport and mounting, semiconductor elementsAnd support substrateHas a support substrate, and the semiconductor elementAnd support substrateBecomes thicker. Therefore, the semiconductor element before mountingAnd support substrateIs strong and will not break.
[0026]
  Thereby, the semiconductor elementAnd support substrateAs well as ensuring the strength of the semiconductor elementAnd support substrateThe handling at the time of transporting and mounting on the mounting board becomes easy, and the productivity can be improved.
[0027]
  Also,semiconductorSince there is a space between the circuit board and the support board, the support board connected by the support member andsemiconductorIt can be easily separated from the circuit board. Thus, by separating the support substrate from the semiconductor element, the semiconductor element is thin.semiconductorIt will have only a circuit board.
[0028]
  Therefore, when mounting, the semiconductor elementAnd support substrateFor example, a semiconductor device having a thin semiconductor element can be provided by disconnecting the supporting substrate after connecting the substrate to a flexible mounting substrate. Such semiconductor devices are thin and can therefore be curved. As a result, even when the semiconductor device is attached to a curved surface, the semiconductor device can be attached along the curved surface.
[0029]
  further,semiconductorThe circuit board and the support board are connected via a support member,semiconductorThere is a gap between the circuit board and the support substrate. Therefore,semiconductorCompared with the case where the circuit board and the support board are bonded together via an adhesive (for example, ACF) that softens and flows during connection, a necessary pressure is applied to the connection portion when the semiconductor element is mounted on the mounting board. be able to. As a result, a good connection state between the mounting substrate and the semiconductor element can be maintained, and the reliability of the semiconductor device can be improved..
[0030]
the aboveThe protruding electrode is preferably made of gold.
[0031]
  According to said structure, a semiconductor element can be mounted on a mounting board easily and reliably by the flip-chip connection method. Moreover, favorable conduction | electrical_connection can be aimed at because a protruding electrode consists of gold | metal | money.
[0032]
  Said semiconductor elementAnd support substrateIssemiconductorThe thickness of the circuit board is preferably 0.5 μm or more and 100 μm or less.
[0033]
  According to the above configuration, a circuit sufficient to have the function of a semiconductor element can be formed in the circuit configuration unit.
[0034]
  Said semiconductor elementAnd support substrateIssemiconductorMore preferably, the thickness of the circuit board is 0.5 μm or more and 10 μm or less.
[0035]
  According to the above configuration, the semiconductor elementAnd support substrateCan be flexible and strong against bending. Therefore, such a semiconductor elementAnd support substrateFor example, a thin semiconductor device (semiconductor package) that can be bent can be provided.
[0036]
  Said semiconductor elementAnd support substrateIssemiconductorThe surface of the circuit board facing the support board, and the support boardsemiconductorThe distance between the surface facing the circuit board is preferably 0.1 μm or more and 1 μm or less.
[0037]
  According to said structure, when it is 0.1 micrometer or more, via a supporting member,semiconductorThe circuit board can be supported on the support substrate. Moreover, by being 1 micrometer or less, it can prevent that a supporting member breaks before mounting a semiconductor element on a mounting substrate.
[0038]
  Said semiconductor elementAnd support substrateThe support member is preferably made of at least one of an insulating material and a metal material.
[0039]
  According to the above configuration, the support member can be easily cut later by, for example, breakage or etching. As a result, the semiconductor elementAnd support substrateAfter mounting on the mounting substrate, the support substrate can be easily removed.
[0040]
  Said semiconductor elementAnd support substrateThe support member is substantially cylindrical,semiconductorThe diameter in a cross section parallel to the circuit board is preferably 0.1 μm or more and 0.5 μm or less.
[0041]
  According to the above configuration, the support member can be easily cut later by, for example, breakage or etching.
[0042]
  Said semiconductor elementAnd support substrateIssemiconductorThe circuit component of the circuit board is preferably covered with a passivation film having an insulating property.
[0043]
  According to said structure, a circuit can be protected in the manufacturing process of a semiconductor element, and the mounting process of a semiconductor element, for example.
[0044]
  A method of manufacturing a semiconductor device according to the present invention includes a circuit forming step of forming a circuit on the semiconductor substrate portion in a substrate having an insulating layer between at least the support substrate portion and the semiconductor substrate portion; An opening for forming a substrate opening by removing a part of the region where the circuit is not formed and the insulating layer disposed under the part of the region until the surface of the supporting substrate is exposed. The insulating layer is removed by etching after the portion forming step, the in-opening deposition step of depositing at least either an insulating material or a metal material in the opening of the substrate, and the in-opening deposition step. By exposing at least a part of at least one of the insulating material or the metal material deposited in the deposition process in the opening in a columnar shape, The semiconductor substrate portion was made, it is characterized by having a support member forming step of forming a support member for supporting on the support substrate portion on.
[0045]
  According to said structure, a space | gap is made between a support substrate part and a semiconductor substrate part by removing an insulating layer by an etching. The semiconductor substrate portion is supported on the support substrate portion by the support member.
[0046]
  As described above, since there is a gap between the support substrate portion and the semiconductor substrate portion, the support substrate portion and the semiconductor substrate portion connected by the support member can be easily separated. Thus, by separating the support substrate portion, the semiconductor device has only a thin semiconductor substrate portion.
[0047]
  Thereby, a thin semiconductor device can be provided. Such a semiconductor device can be curved because it is thin. Therefore, even when the semiconductor device is attached to a curved surface, the semiconductor device can be attached along the curved surface.
[0048]
  The method for manufacturing a semiconductor device includes a passivation film forming step of forming a passivation film having an opening for exposing a part of the circuit on the circuit after the support member forming step, and a circuit exposed from the opening. It is preferable to have a protruding electrode forming step of forming a protruding electrode for connection to the outside.
[0049]
  According to said structure, a circuit can be protected in the manufacturing process of a semiconductor device by forming the passivation film.
[0050]
  Further, by forming the protruding electrode, for example, a flip chip connection method can be used in the subsequent connection step. Therefore, the circuit can be easily and reliably connected to the outside.
[0051]
  In the semiconductor device manufacturing method described above, it is preferable that the passivation film covers the side surface of the circuit.
[0052]
  According to said structure, when an insulating layer is removed by an etching, for example in the said supporting member formation process, it can prevent that a circuit is eroded by a chemical | medical solution.
[0053]
  The semiconductor device manufacturing method includes a supporting member cutting step of cutting the supporting member and removing the supporting substrate portion after the connecting step of flip-chip connecting the protruding electrode and the electrode terminal on the mounting substrate. The semiconductor substrate portion on which the circuit is formed is preferably mounted on the mounting substrate.
[0054]
  Specifically, in the support member cutting step, the support member is preferably cut by folding the support member.
[0055]
  Alternatively, in the support member cutting step, the support member is preferably cut by etching the support member.
[0056]
  According to said structure, the support substrate part removed after a connection process functions as a member for reinforcement with respect to a semiconductor substrate part.
[0057]
  That is, in the connection process, the support substrate portion is provided, and the semiconductor device is thickened accordingly. Therefore, the strength of the semiconductor device (semiconductor element) before the connection process is strong and will not be damaged. As a result, the strength of the semiconductor device before the connection process is ensured, and handling during the transfer process and the connection process is facilitated, and the productivity of the semiconductor device can be improved.
[0058]
  Further, the support member can be cut by folding or etching the support member. Therefore, a peeling process using a chemical solution or the like is not required when removing the support substrate portion. Thereby, a support substrate part can be easily removed by a simple process.
[0059]
  In the above method for manufacturing a semiconductor device, the substrate is preferably an SOI substrate.
[0060]
  According to said structure, the board | substrate used for manufacture of a semiconductor device can be easily manufactured because a board | substrate is a SOI (Silicon on insulator) board | substrate.
[0061]
DETAILED DESCRIPTION OF THE INVENTION
  An embodiment of the present invention will be described with reference to FIGS. 1 to 6 as follows.
[0062]
  This semiconductor deviceAnd support substrate1 will be described with reference to FIGS. Here, FIG.Bonded body of semiconductor element and support substrateFIG. 1B is a cross-sectional view taken along the line AA ′ in FIG. The semiconductor element is mounted on a mounting substrate, and is incorporated into a package as a semiconductor device, for example.
[0063]
  Semiconductor elementAnd support substrateAs shown in FIG. 1B, a semiconductor circuit board (circuit board, semiconductor substrate part) 3, a circuit configuration part (circuit board) 4, a passivation film 5, and a protruding electrode 6 are provided as support pins (support members). It is supported on a support substrate (support substrate portion) 1 through 2.
[0064]
  The support substrate 1 is made of Si (silicon) and has a thickness of 400 μm.
[0065]
  By the way, for example, when the thickness of the semiconductor element is 100 μm or less, the strength is usually weak, the possibility of breakage is high, and handling is very difficult. That is, it is difficult to handle the semiconductor element when it is transported or when it is mounted on the mounting substrate, and the productivity is lowered.
[0066]
  However, as described above, since the thickness of the support substrate 1 is 400 μm, the semiconductor element before being mounted on the mounting substrateAnd support substrateIs thick, so its strength is strong and will not break. Thereby, while ensuring the intensity | strength of a semiconductor element, the handling at the time of conveyance of a semiconductor element and the mounting to a mounting board becomes easy, and it can aim at the improvement of productivity.
[0067]
  The support pin 2 has a cylindrical shape and is made of W (tungsten) and TiN (titanium nitride). For example, as shown in FIG.Bonded body of semiconductor element and support substrateThe semiconductor circuit board 3 (see FIG. 1B) having the circuit component 4, the passivation film 5, and the protruding electrode 6 is supported on the support substrate 1 by the four support pins 2. That is, there is a space (gap) between the support substrate 1 and the semiconductor circuit substrate 3 by the support pins 2 as shown in FIG.
[0068]
  Here, the height supported by the support pins 2, that is, the length between the support substrate 1 and the semiconductor circuit substrate 3 is 0.1 μm. In addition, it is preferable that this length is 0.1 micrometer or more and 1 micrometer or less (0.1-1 micrometer). The diameter of the support pin 2 is 0.1 to 0.5 μm.
[0069]
  Thus, when the length between the support substrate 1 and the semiconductor circuit substrate 3 is 0.1 μm or more, the semiconductor circuit substrate 3 can be supported on the support substrate 1 via the support pins 2. . In addition, since the length between the support substrate 1 and the semiconductor circuit substrate 3 is 1 μm or less, the support pins 2 can be prevented from being broken before the semiconductor element is mounted on the mounting substrate. .
[0070]
  The material of the support pin 2 is not particularly limited. As described above, a metal (for example, W) and a nitride (for example, TiN) may be used. Alternatively, for example, a metal and an insulator may be used. Only one of them may be used.
[0071]
  Thus, since the support pin 2 is made of at least one of an insulating material or a metal material, the support pin 2 can be easily cut later by, for example, breakage or etching.
[0072]
  Further, the shape of the support pin 2 is not particularly limited, and may be a quadrangular prism shape, for example.
[0073]
  The semiconductor circuit substrate 3 is made of silicon. On the semiconductor circuit board 3, a circuit configuration unit 4 constituting a circuit is formed. The thickness of the circuit component 4 is 3 μm.
[0074]
  The sum of the thickness of the semiconductor circuit board 3 and the thickness of the circuit component 4 (the thickness of the circuit board) preferably has a thickness of 0.5 to 100 μm in order to constitute a circuit as a semiconductor device. .
[0075]
  Furthermore, it is preferable that the sum of the thickness of the semiconductor circuit substrate 3 and the thickness of the circuit component 4 has a thickness of 0.5 to 10 μm.
[0076]
  Thereby, a semiconductor element can have flexibility and becomes strong with respect to a bending. Therefore, by mounting such a semiconductor element, for example, a semiconductor device (for example, a semiconductor package) that is thin and bendable can be provided.
[0077]
  The configuration of the circuit configuration unit 4 is not particularly limited. For example, as shown in FIG. 2, a CMOS inverter may be included.
[0078]
  2 includes a gate electrode 13 corresponding to the source 11 and drain 12 formed on the semiconductor circuit substrate 3 by ion implantation, a field oxide film 14 for isolating and insulating each element from each other, and the source 11. A wiring 15 electrically connected to the drain 12, a wiring 16, and a protective film 17 made of SiN (silicon nitride).
[0079]
  The passivation film 5 is made of, for example, a polyimide resin, and is disposed so as to cover the circuit component 4 on the semiconductor circuit substrate 3 as shown in FIG. The passivation film 5 that is an insulating film prevents the occurrence of crosstalk or the like in the semiconductor device.
[0080]
  Further, as shown in FIG. 1B, the passivation film 5 has an opening 5a so that the electrode pad of the circuit component 4 is exposed. A protruding electrode 6 is formed on the electrode pad so as to fill the opening 5a.
[0081]
  The protruding electrode 6 is an external connection terminal and is made of Ni (nickel) and Au (gold). That is, the bump electrode 6 has a configuration in which an Au bump is formed on a layer made of Ni. The height of the protruding electrode 6 is 3 to 5 μm. By having the protruding electrode 6, the semiconductor element can easily and reliably perform flip chip connection to the mounting substrate. Further, since the protruding electrode 6 is made of Au, good conduction with the mounting substrate can be achieved.
[0082]
  Note that the bump portion of the protruding electrode 6 is not particularly limited as long as it can be electrically connected to the mounting substrate, and may be a solder bump, for example. By forming the bump portion with solder, a semiconductor element can be manufactured at low cost.
[0083]
  As described above, semiconductor elementsAnd support substrateComprises a circuit component 4 constituting a circuit, a semiconductor circuit substrate 3 having the circuit component 4 on its surface, and a support substrate 1 for supporting the semiconductor circuit substrate 3 via support pins 2. There is a gap between the substrate 3 and the support substrate 1.
[0084]
  Usually, in order to reduce the thickness of a semiconductor device, for example, when a semiconductor element having a thickness of 100 μm or less is formed, the strength of the semiconductor element becomes weak and the possibility of breakage is high, and its handling is very difficult. That is, it is difficult to handle the semiconductor element when it is transported or when it is mounted on a mounting substrate (for example, a flexible circuit board) for mounting the semiconductor element, and the productivity of the semiconductor element is reduced.
[0085]
  However, when the support substrate 1 is provided as described above, the support substrate 1 serves as a reinforcing member for the semiconductor circuit substrate 3.
[0086]
  That is, semiconductor elementAnd support substrateHas a support substrate 1 at the time of transport and mounting, and accordingly, a semiconductor element.And support substrateBecomes thicker. Therefore, the strength of the semiconductor element before mounting is strong and will not be damaged.
[0087]
  As a result, the strength of the semiconductor element can be ensured, the handling of the semiconductor element can be facilitated during transportation or mounting on the mounting substrate, and the productivity of the semiconductor device including the semiconductor element can be improved.
[0088]
  Further, since there is a gap between the semiconductor circuit substrate 3 and the support substrate 1, the support substrate 1 and the semiconductor circuit substrate 3 connected by the support pins 2 can be easily separated. Thus, by separating the support substrate 1 from the semiconductor element, the semiconductor element has only the thin semiconductor circuit board 3 and the circuit component 4.
[0089]
  Therefore, when mounting the semiconductor element, the semiconductor elementAnd support substrateFor example, the semiconductor device having a thin semiconductor element can be provided by separating the support substrate 1 after connecting to a flexible mounting substrate. Such semiconductor devices are thin and can therefore be curved. As a result, even when the semiconductor device is attached to a curved surface, the semiconductor device can be attached along the curved surface.
[0090]
  Furthermore, the semiconductor circuit board 3 and the support board 1 are connected via the support pins 2, and there is a gap between the semiconductor circuit board 3 and the support board 1. Therefore, compared with the case where the semiconductor circuit substrate 3 and the support substrate 1 are bonded together through an adhesive that softens and flows when connected, for example, the pressure required when mounting the semiconductor element on the mounting substrate Can be added to the connection portion between the semiconductor element and the mounting substrate. Thereby, a good connection state between the mounting substrate and the semiconductor element can be maintained, and the reliability of the semiconductor device can be improved.
[0091]
  Hereinafter, the semiconductor elementAnd support substrateAn example of the manufacturing process will be described with reference to FIGS.
[0092]
  First, on a SOI (Silicon on insulator) substrate (a semiconductor wafer or substrate having an SOI (Silicon on insulator) structure) 10, a circuit configuration unit 4 including an element formation unit on which elements are formed is formed, and photolithography is performed Then, openings 4a and 4b are formed (FIG. 3A, circuit forming step).
[0093]
  Here, the SOI substrate 10 has a structure having an insulating layer 7 between a support substrate (support substrate portion) 1 made of Si and a semiconductor circuit substrate (semiconductor substrate portion) 3 made of Si.
[0094]
  The opening 4a is later deposited with W and TiN. The opening 4b is for forming an erosion prevention groove later.
[0095]
  Next, the region disposed under the opening 4a (exposed from the opening 4a) is etched until the surface of the support substrate 1 is exposed. That is, a portion of the semiconductor circuit substrate 3 and the insulating layer 7 disposed under the opening 4a is removed to form an opening (substrate opening) 8 (FIG. 3B, opening forming step). ).
[0096]
  Then, after the TiN film 21 is formed in the opening 8, it is planarized by CMP (Chemical Mechanical Polishing). Thereafter, W is deposited and planarized by CMP to form a W layer 22 (intra-opening deposition step). At this time, TiN and W are also deposited in the opening 4b, but TiN and W in the opening 4b are removed by etching by a photolithography method to form an erosion prevention groove (FIG. 3 ( c)).
[0097]
  Next, a polyimide resin is formed on substantially the entire surface of the support substrate 1 (FIG. 3D), and the passivation film 5 is formed by forming an opening 5a that exposes a part of the circuit by photolithography. It forms (FIG.3 (e), a passivation film formation process).
[0098]
  After that, after forming a metal layer made of Ni, the protruding electrode 6 for connecting the circuit exposed from the opening 5a to the outside is formed by electrolytic plating using Au (FIG. 3F, forming the protruding electrode). Process). The formation of the bumps on the protruding electrodes 6 is not limited to electrolytic plating, and may be performed by, for example, electroless plating or wire bumping using wire bonds.
[0099]
  Further, using the dicing equipment, the dicing portion 9 is formed by further cutting the erosion preventing groove until the surface of the insulating layer 7 is exposed (FIG. 3F). Thereby, the support pin 2 is formed later, and the chemical liquid can be made to enter the insulating layer 7 that has a gap.
[0100]
  Next, the insulating layer 7 is removed by etching using a chemical solution such as hydrofluoric acid (FIG. 3G, support member forming step). Thereby, the TiN film 21 and the W layer 22 deposited in the opening 8 are exposed in a columnar shape. As a result, it is possible to form the support pins 2 that support the semiconductor circuit substrate 3 having the circuit configuration unit 4 on the support substrate 1.
[0101]
  As described above, the passivation film 5 is formed not only on the upper surface but also on the side surface of the circuit component 4 by forming the passivation film 5 after forming the opening 4b first and then forming the dicing part 9. It will cover.
[0102]
  Thereby, when the etching shown in FIG. 3G is performed, the circuit component 4 can be prevented from being eroded by the chemical solution.
[0103]
  Next, in the process shown in FIG. 3A to FIG. 3G, an example of the process of dividing into pieces when a plurality of semiconductor elements are manufactured on the support substrate 1 is based on FIG. 4. explain.
[0104]
  It is assumed that a plurality of semiconductor elements are formed on the support substrate 1 after the steps shown in FIGS. At this time, a dicing portion 9 formed in the step shown in FIG. 3F is disposed between adjacent semiconductor elements (FIG. 4A).
[0105]
  And by the dicing apparatus, along the dicing line 40 in the dicing part 9, it is an individual semiconductor element.And support substrate(FIG. 4B).
[0106]
  Note that one semiconductor element is formed on the support substrate 1.And support substrateWhen forming, it is not necessary to dice.
[0107]
  The semiconductor element in which the semiconductor circuit board 3 is supported on the support substrate 1 via the support pins 2 by the above-described steps.And support substrateIs manufactured.
[0108]
  Further, a mounting process (semiconductor element) for mounting the semiconductor element on a flexible circuit board (mounting board)And support substrateAn example of a manufacturing process of a semiconductor device using the above will be described with reference to FIG.
[0109]
  Here, the semiconductor element is mounted on the flexible circuit board 55 so that the protruding electrode 6 of the semiconductor element is connected to the electrode 56. An anisotropic conductive film (hereinafter referred to as ACF: Anisotropic Conductive Film) is affixed on the flexible circuit board 55.
[0110]
  First, the semiconductor element is formed by the vacuum suction hole 51 of the bonding collet 50.And support substrateIs adsorbed (FIG. 5A).
[0111]
  Next, the protruding electrode 6 and the electrode 56 on the flexible circuit board 55 are aligned, and pressurization and heating are performed so as to bring them into contact with each other (FIG. 5B, connection step). And the bonding collet 50 is a semiconductor element.And support substrate(Fig. 5 (c)).
[0112]
  Subsequently, the support pins 2 are folded (cut) between the support substrate 1 and the semiconductor circuit substrate 3, and the support substrate 1 is removed (FIG. 5D, support member cutting step).
[0113]
  As a result, only the thin semiconductor circuit board 3 and the circuit component 4 can be mounted on the flexible circuit board 55. As described above, since only the thin semiconductor circuit board 3 and the circuit component 4 are flip-chip connected, for example, a flexible semiconductor package that can be bent and used can be realized.
[0114]
  Further, by flip chip connecting the semiconductor element to the flexible circuit board 55, the semiconductor element can be easily and reliably mounted.
[0115]
  In addition, since the support pin 2 is very thin and weak in strength, by applying a force in the shearing direction of the support substrate 1, a force in the rotation direction, or a light twist in the support member cutting step. The support pin 2 can be easily removed.
[0116]
  Further, by adjusting the amount of ACF, it is possible to prevent the anisotropic conductive material from adhering to the support substrate 1 and the bonding collet 50.
[0117]
  Further, the mounting of the semiconductor element on the flexible circuit board 55 is not limited to the one using the ACF, and an anisotropic conductive paste (hereinafter referred to as ACP: Anisotropic Conductive Paste) may be used. .
[0118]
  Hereinafter, an example using ACP will be described with reference to FIG. Here, the protruding electrode 66 is formed by wire bumping using a wire bond, and its height is 50 to 60 μm.
[0119]
  First, an appropriate amount of ACP 67 that does not protrude is supplied onto the flexible circuit board 55 using a dispense. And by the vacuum suction hole 51 of the bonding collet 50,Bonded body of semiconductor element and support substrateIs adsorbed (FIG. 6A).
[0120]
  Next, alignment between the protruding electrode 66 and 56 on the flexible circuit board 55 is performed, and pressurization and heating are performed so as to bring them into contact (connection process). Thereafter, the bonding collet 50 is replaced with a semiconductor element.And support substrateMove away from.
[0121]
  Subsequently, the support pins 2 are folded (cut) between the support substrate 1 and the semiconductor circuit substrate 3, and the support substrate 1 is removed (FIG. 6B, support member cutting step).
[0122]
  5C to 5D is not particularly limited as long as the support substrate 1 is removed. For example, the support substrate 2 is cut by etching to form the support substrate 2. 1 may be removed.
[0123]
  For example, after the step shown in FIG.₂O₂By the etching using a chemical solution such as (hydrogen peroxide solution), the support pins 2 are cut and the support substrate 1 can be removed from the semiconductor device.
[0124]
  As described above, in the support member cutting step, the support substrate 1 is removed by cutting the support pins 2 by folding or etching the support pins 2. Therefore, when removing the support substrate 1, a peeling process using a chemical solution or the like is not required. Thereby, the support substrate 1 can be easily removed by a simple process.
[0125]
  Also, the support pin 2 can be cut with a semiconductor element.And support substrateIs performed after being connected to the flexible circuit board 55, only the semiconductor circuit board 3 having the circuit component 4 is mounted on the flexible circuit board 55.
[0126]
  Thereby, a thin semiconductor device can be provided. Also, a semiconductor element in this semiconductor deviceAnd support substrateSince the support substrate 1 is provided before mounting, it can be handled in a thick state before mounting. Therefore, the strength of the semiconductor element before mounting is strong and will not be damaged. As a result, the strength of the semiconductor element can be ensured, and the handling of the semiconductor element when it is transported or mounted on the mounting substrate is facilitated, so that the productivity in the semiconductor device can be improved.
[0127]
【The invention's effect】
  Semiconductor device of the present inventionAnd support substrateAs described above, it has a circuit component part that constitutes a circuit on the surface.semiconductorA circuit board; andsemiconductorA support substrate that supports the circuit board via a support member, andsemiconductorThere is a gap between the circuit board and the support board.And a protrusion electrode for connecting the circuit to the outside is provided on the circuit component, and the support member and the support substrate are provided on a surface of the semiconductor circuit substrate opposite to the surface having the protrusion electrode. Is placedIt is a configuration.
[0128]
  Thereby, a support substrate has a circuit structure part on the surface.semiconductorIt serves as a reinforcing member for the circuit board. In other words, during transport and mounting, semiconductor elementsAnd support substrateHas a support substrate, and accordingly, the semiconductor element becomes thicker. Therefore, the semiconductor element before mountingAnd support substrateIs strong and will not break.
[0129]
  As a result, while ensuring the strength of the semiconductor element, the semiconductor elementAnd support substrateThe handling at the time of transporting and mounting on the mounting board becomes easy, and the productivity can be improved.
[0130]
  Also,semiconductorSince there is a space between the circuit board and the support board, the support board connected by the support member andsemiconductorIt can be easily separated from the circuit board. For this reason, a semiconductor element will have only a thin circuit board and a circuit structure part.
[0131]
  Therefore, when mounting, the semiconductor elementAnd support substrateFor example, a semiconductor device having a thin semiconductor element can be provided by disconnecting the supporting substrate after connecting the substrate to a flexible mounting substrate. Such semiconductor devices are thin and can therefore be curved. As a result, even when the semiconductor device is attached to a curved surface, the semiconductor device can be attached along the curved surface.
[0132]
  further,semiconductorThe circuit board and the support board are connected via a support member,semiconductorThere is a gap between the circuit board and the support substrate. Therefore, the semiconductor elementAnd support substrateWhen mounting on the mounting board, the necessary pressure can be applied to the connecting portion without waste. As a result, it is possible to maintain a good connection state between the mounting substrate and the semiconductor element and to improve the reliability of the semiconductor device.
[0133]
the aboveThe protruding electrode is made of gold.
[0134]
  Accordingly, the semiconductor element can be easily and surely mounted on the mounting substrate by the flip chip connection method. Further, since the protruding electrode is made of gold, there is an effect that good conduction can be achieved.
[0135]
  Semiconductor device of the present inventionAnd support substrateIssemiconductorThe thickness of the circuit board is 0.5 μm or more and 100 μm or less.
[0136]
  Thereby, there is an effect that a circuit sufficient to have a function of a semiconductor element can be formed in the circuit configuration unit.
[0137]
  Semiconductor device of the present inventionAnd support substrateIn addition,semiconductorThe thickness of the circuit board is 0.5 μm or more and 10 μm or less.
[0138]
  Thereby, a semiconductor element can have flexibility and becomes strong with respect to a bending. Therefore, by providing such a semiconductor element, for example, it is possible to provide a semiconductor device (semiconductor package) that is thin and bendable.
[0139]
  Semiconductor device of the present inventionAnd support substrateIssemiconductorThe surface of the circuit board facing the support board, and the support boardsemiconductorThe space between the surface facing the circuit board is 0.1 μm or more and 1 μm or less.
[0140]
  Thereby, via a support member,semiconductorThe circuit board can be supported on the support substrate, and the support member can be prevented from being broken before the semiconductor element is mounted on the mounting substrate.
[0141]
  Semiconductor device of the present inventionAnd support substrateIs a configuration in which the support member is made of at least one of an insulating material and a metal material.
[0142]
  Thereby, the support member can be easily cut later by, for example, breaking or etching. As a result, the semiconductor elementAnd support substrateAfter mounting on the mounting substrate, the support substrate can be easily removed.
[0143]
  Semiconductor device of the present inventionAnd support substrateThe support member is substantially cylindrical,semiconductorThe diameter in a cross section parallel to the circuit board is 0.1 μm or more and 0.5 μm or less.
[0144]
  Thereby, there is an effect that the support member can be easily cut later by, for example, breakage or etching.
[0145]
  Semiconductor device of the present inventionAnd support substrateIssemiconductorThe circuit component of the circuit board is covered with an insulating passivation film.
[0146]
  Thereby, for example, a semiconductor elementAnd support substrateManufacturing processes and semiconductor elementsAnd support substrateIn the mounting process, the circuit can be protected.
[0147]
  A method of manufacturing a semiconductor device according to the present invention includes a circuit forming step of forming a circuit on the semiconductor substrate portion in a substrate having an insulating layer between at least the support substrate portion and the semiconductor substrate portion; An opening for forming a substrate opening by removing a part of the region where the circuit is not formed and the insulating layer disposed under the part of the region until the surface of the supporting substrate is exposed. The insulating layer is removed by etching after the portion forming step, the in-opening deposition step of depositing at least either an insulating material or a metal material in the opening of the substrate, and the in-opening deposition step. By exposing at least a part of at least one of the insulating material or the metal material deposited in the deposition process in the opening in a columnar shape, The semiconductor substrate portion was made, a structure and a supporting member forming step of forming a support member for supporting on the support substrate portion on.
[0148]
  As a result, by removing the insulating layer by etching, a gap is formed between the support substrate portion and the semiconductor substrate portion. The semiconductor substrate portion is supported on the support substrate portion by the support member.
[0149]
  As described above, since there is a gap between the support substrate portion and the semiconductor substrate portion, the support substrate portion and the semiconductor substrate portion connected by the support member can be easily separated. Thus, by separating the support substrate portion, the semiconductor device has only a thin semiconductor substrate portion.
[0150]
  Therefore, a thin semiconductor device can be provided. Such a semiconductor device can be curved because it is thin. As a result, even when the semiconductor device is attached to a curved surface, the semiconductor device can be attached along the curved surface.
[0151]
  The semiconductor device manufacturing method of the present invention includes a passivation film forming step of forming a passivation film having an opening for exposing a part of the circuit on the circuit after the support member forming step, and a circuit exposed from the opening. And a protruding electrode forming step of forming a protruding electrode for connecting to the outside.
[0152]
  Thereby, the circuit can be protected in the manufacturing process of the semiconductor device by the passivation film.
[0153]
  Further, by forming the protruding electrode, for example, a flip chip connection method can be used in the subsequent connection step. Therefore, there is an effect that the circuit can be easily and reliably connected to the outside.
[0154]
  The method for manufacturing a semiconductor device of the present invention has a configuration in which a passivation film covers a side surface of a circuit.
[0155]
  Thus, for example, in the support member forming step, it is possible to prevent the circuit from being eroded by the chemical solution when the insulating layer is removed by etching.
[0156]
  The semiconductor device manufacturing method of the present invention includes a support member cutting step of cutting the support member and removing the support substrate portion after the connecting step of flip-chip connecting the protruding electrode and the electrode terminal on the mounting substrate. Thus, the semiconductor substrate portion on which the circuit is formed is mounted on the mounting substrate.
[0157]
  Specifically, in the support member cutting step, the support member is cut by folding the support member.
[0158]
  Alternatively, the support member cutting step is configured to cut the support member by etching the support member.
[0159]
  Thereby, the support substrate part removed after a connection process functions as a member for reinforcement with respect to a semiconductor substrate part.
[0160]
  That is, in the connection process, the support substrate portion is provided, and the semiconductor device is thickened accordingly. Therefore, the strength of the semiconductor device (semiconductor element) before the connection process is strong and will not be damaged. As a result, the strength of the semiconductor device before the connection process is ensured, and handling during the transfer process and the connection process is facilitated, so that productivity in the semiconductor device can be improved.
[0161]
  Further, the support member can be cut by folding or etching the support member. Therefore, a peeling process using a chemical solution or the like is not required when removing the support substrate portion. Thereby, there exists an effect that a support substrate part can be easily removed by a simple process.
[0162]
  The method for manufacturing a semiconductor device of the present invention has a configuration in which the substrate is an SOI substrate.
[0163]
  Thereby, there is an effect that a substrate used for manufacturing a semiconductor device can be easily manufactured.
[Brief description of the drawings]
FIG. 1 (a) relates to an embodiment of the present invention.Bonded body of semiconductor element and support substrateIt is a top view which shows the structure of the principal part of (a), (b) is AA 'line arrow sectional drawing of (a).
FIG. 2 is a cross-sectional view showing a schematic configuration of a circuit configuration unit.
3 (a) to (g) are the semiconductor elements shown in FIG.And support substrateIt is a process flow figure showing an example of the manufacturing process of.
4A and 4B are semiconductor elements.And support substrateIt is a process flowchart which shows an example of the process of dividing into pieces.
5 (a) to (d) are the semiconductor elements shown in FIG.And support substrateIt is a process flow figure showing an example of a manufacturing process of a semiconductor device using.
6 (a) and (b) are the semiconductor elements shown in FIG.And support substrateIt is a process flow figure showing an example of other manufacturing processes of a semiconductor device using.
FIG. 7 is a cross-sectional view showing a configuration of a main part before a reinforcing member is peeled in a conventional semiconductor device.
[Explanation of symbols]
  1 Support substrate (support substrate part)
  2 Support pins (support members)
  3 Semiconductor circuit board (circuit board, semiconductor substrate part)
  4 Circuit components (circuit board)
  5 Passivation film
  6 Projection electrode
  7 Insulation layer
  9 Dicing part
10 SOI substrate (substrate)
40 Dicing line
50 Bonding collet
51 Vacuum suction hole
55 Flexible circuit board (mounting board)
56 electrodes (external)
57 Anisotropic Conductive Film (ACF)
67 Anisotropic conductive paste (ACP)

Claims (15)

A semiconductor circuit board having on its surface a circuit component that constitutes the circuit;
A support substrate for supporting the semiconductor circuit substrate via a support member;
Between the semiconductor circuit board and the supporting substrate, it has a gap,
On the circuit configuration part, a protruding electrode for connecting the circuit to the outside is provided,
A joined body of a semiconductor element and a support substrate, wherein the support member and the support substrate are disposed on a surface of the semiconductor circuit substrate opposite to the surface having the protruding electrodes . The joined body of a semiconductor element and a support substrate according to claim 1, wherein the protruding electrode is made of gold. 3. The joined body of a semiconductor element and a support substrate according to claim 1, wherein a thickness of the semiconductor circuit substrate is 0.5 μm or more and 100 μm or less. 4. The joined body of a semiconductor element and a support substrate according to claim 1, wherein a thickness of the semiconductor circuit substrate is 0.5 μm or more and 10 μm or less. 5. And the side surface opposite to the support substrate in the semiconductor circuit substrate, between the surface on the side opposite to the semiconductor circuit board in the supporting substrate, and wherein the 0.1μm or more, and is 1μm or less The joined body of the semiconductor element and the support substrate according to any one of claims 1 to 4. 6. The joined body of a semiconductor element and a support substrate according to claim 1, wherein the support member is made of at least one of an insulating material and a metal material. 7. The support member according to claim 1, wherein the support member has a substantially cylindrical shape, and a diameter in a cross section parallel to the semiconductor circuit substrate is 0.1 μm or more and 0.5 μm or less. A joined body of the semiconductor element according to the item and the support substrate . 8. The joined body of a semiconductor element and a support substrate according to claim 1, wherein the circuit component of the semiconductor circuit substrate is covered with a passivation film having an insulating property. A circuit forming step of forming a circuit on the semiconductor substrate portion of the substrate having an insulating layer at least between the support substrate portion and the semiconductor substrate portion;
A substrate opening is formed by removing a portion of the region where the circuit is not formed on the semiconductor substrate portion and the insulating layer disposed under the portion of the semiconductor substrate portion until the surface of the support substrate portion is exposed. An opening forming step for forming a portion;
An in-opening deposition step of depositing at least either an insulating material or a metal material in the substrate opening;
By removing the insulating layer by etching after the intra-opening deposition step, at least a part of at least one of the insulating material or the metal material deposited in the intra-opening deposition step is exposed in a columnar shape. And a supporting member forming step of forming a supporting member for supporting the semiconductor substrate portion on which the circuit is formed on the supporting substrate portion. A passivation film forming step of forming a passivation film having an opening for exposing part of the circuit on the circuit after the supporting member forming step;
The method for manufacturing a semiconductor device according to claim 9 , further comprising: a protruding electrode forming step of forming a protruding electrode for connecting the circuit exposed from the opening to the outside. The method of manufacturing a semiconductor device according to claim 10 , wherein the passivation film covers a side surface of the circuit. After the connecting step of flip-chip connecting the protruding electrode and the electrode terminal on the mounting substrate,
By having a support member cutting step of removing the support substrate portion by cutting the support member, a semiconductor substrate portion in which the circuit is formed in claim 10 or 11, characterized in that mounted on the mount board The manufacturing method of the semiconductor device of description. 13. The method of manufacturing a semiconductor device according to claim 12 , wherein in the supporting member cutting step, the supporting member is cut by folding the supporting member. 13. The method of manufacturing a semiconductor device according to claim 12 , wherein in the supporting member cutting step, the supporting member is cut by etching the supporting member. The substrate manufacturing method of a semiconductor device according to any one of claims 9 to 14, characterized in that an SOI substrate.

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