JP3818826B2 - Semiconductor device - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a semiconductor device in which the strength of a pad portion with which a probe terminal of an inspection device contacts is increased.
[0002]
[Prior art]
FIG. 4 shows a first configuration of a conventional semiconductor device employing a three-layer metal process. In FIG. 4, 127 is a silicon substrate. Reference numeral 101 denotes an input / output cell formed on the silicon substrate 127, which is a dedicated cell for inputting and outputting signals.
[0003]
On the surface of the silicon substrate 127, an N-channel output / protection transistor unit 111, a P-channel output / protection transistor unit 112, and an output prebuffer unit 113 are formed. The N-channel output / protection transistor unit 111 includes an N-channel transistor that performs L-level output and an N-channel transistor for surge protection. The P-channel output / protection transistor unit 112 includes a P-channel transistor that performs H-level output and a P-channel transistor for surge protection. The output pre-buffer unit 113 has a circuit for switching the input and output of the input / output cell 101. The output pre-buffer unit 113 prohibits input when outputting and prohibits output when inputting.
[0004]
A first layer metal 126 is formed on the silicon substrate 127 via a gate oxide film. The first layer metal 126 controls signal input to the inside, signal output from the inside, and connection (not shown) with the surge protection transistor.
[0005]
On the first layer metal 126, a second layer pad metal 121, a second layer ground trunk 122, a first second layer power trunk 123, and a second second layer power trunk 124 are first. , Two-metal interlayer film. The second layer pad metal 121 is provided to increase the pad strength, and is connected to the first layer metal 126 via the pad metal contact 125. The second-layer ground trunk line 122 shares the potential with cells arranged on both sides of the input / output cell 101 for the purpose of fixing the ground potential, and supplies the source potential to the N-channel output / protection transistor unit 111. is there. The first second-layer power supply trunk line 123 shares the potential with cells arranged on both sides of the input / output cell 101 for the purpose of fixing the power supply potential, and supplies the source potential to the P-channel output / protection transistor unit 112. To do. The second second-layer power supply main line 124 shares the potential with the cells arranged on both sides of the input / output cell 101 for the purpose of fixing the power supply potential, and supplies power to the output prebuffer unit 113. .
[0006]
A third layer pad metal 110 is formed on the second layer pad metal 121, a third layer ground trunk line 114 is formed on the second layer ground trunk line 122, and a first layer power supply trunk line 123 is formed on the first layer power trunk line 123. One third-layer power trunk 115 and a second third-layer power trunk 116 are formed on the second second-layer power trunk 124 via second and third metal interlayers, respectively. The third layer pad metal 110 is a probe inspection / bonding pad. 117 is a pad metal contact for connecting the third layer pad metal 110 and the second layer pad metal 121 to the same potential, and 118 is a connection between the third layer ground trunk 114 and the second layer ground trunk 122 to the same potential. 119 is a first power supply main line contact for connecting the first third-layer power supply main line 115 and the first second-layer power supply main line 123 to the same potential, and 120 is This is a second power supply main line contact for connecting the second third layer power supply main line 116 and the second second layer power supply main line 124 to the same potential.
[0007]
Wire bonding when the probe of the inspection device is brought into contact with the third layer pad metal 110 to inspect the input / output cell 101 and the circuit to which the input / output cell 101 is connected, and to assemble the semiconductor device. Also do. Therefore, it has a laminated structure of the second layer pad metal 121 and the third layer pad metal 110, and the strength is increased. Therefore, it has a characteristic that it is not easily destroyed even if the probe of the inspection apparatus contacts a plurality of times.
[0008]
FIG. 5 shows a second configuration of the conventional semiconductor device. In FIG. 5, the same numbers as those in FIG. 4 perform the same functions. In the second configuration shown in FIG. 5, the pad metal in the input / output cell 201 is divided into a third layer pad metal 110 and a third layer probe inspection pad metal 210 as compared with the first configuration shown in FIG. 4. Has been. This is because the pad portion, the ground trunk line, and the first power supply trunk line are each made into a single layer in order to reduce the cell area. In particular, the pad metal has a lower strength than the configuration of FIG. However, if the probe of the inspection apparatus contacts a plurality of times, the third-layer probe inspection pad metal 210 may be easily broken, and the probe of the inspection apparatus may penetrate the first second-layer power supply trunk line 123.
[0009]
[Problems to be solved by the invention]
Semiconductor devices are required to improve bonding pad strength while reducing area. In the conventional three-layer metal process technology, as shown in FIG. 4, the area is large in order to improve the strength of the pad for probe inspection and assembly bonding. Further, as shown in FIG. 5, a small area is realized with a low pad strength. That is, conventionally, there is a problem that the area is large with respect to the required strength as shown in FIG. 4, and the strength is insufficient with respect to the required area as shown in FIG.
[0010]
An object of the present invention is to provide a semiconductor device having a small area and an increased pad portion strength.
[0011]
[Means for Solving the Problems]
In order to achieve the above object, in the first semiconductor device according to the present invention, a three-layer metal process is adopted in an input / output cell for performing signal input / output of the semiconductor device, and an N-channel transistor portion and a P-channel transistor portion. A first-layer metal provided on the two transistor parts for connection to the two transistor parts, and a power supply main line and a ground main line for supplying a fixed potential to the two transistor parts, and a lower layer of the probe test pad. And a third layer metal constituting the upper layer of the bonding pad and the probe inspection pad. In addition, the first layer, the second layer, and the third layer metal are located directly above both transistor portions. The third layer metal constituting the bonding pad and the upper layer of the probe inspection pad, the portion of the second layer metal constituting the lower layer of the probe inspection pad, and the first layer metal are pad metal contacts. The portions of the third layer metal that constitute the upper layer of the probe inspection pad are reinforced by the lower layer of the probe inspection pad formed of the second layer metal.
[0012]
The lower layer of the probe inspection pad in the second layer metal may be provided between the power supply trunk line and the ground trunk line. In addition, the entire region of the probe inspection pad is laminated.
[0013]
The second semiconductor device according to the present invention adopts a three-layer metal process in the power supply terminal cell for inputting the power supply voltage of the semiconductor device, and in addition to the N-channel transistor portion and the P-channel transistor portion. The first, second and third layer metals are provided as follows. That is, the first layer metal is provided on both transistor parts for connection to both transistor parts. The second layer metal has a function of a power supply trunk line that supplies a potential to the P channel transistor part and serves as a lower layer of the probe test pad; a ground trunk line that supplies a potential to the N channel transistor part; Configure. The third layer metal constitutes the bonding pad and the upper layer of the probe inspection pad. In addition, the first layer, the second layer, and the third layer metal are located directly above both transistor portions. Further, the third layer metal constituting the bonding pad and the upper layer of the probe inspection pad, the portion constituting the shared portion of the second layer metal, and the first layer metal are connected via a pad metal contact. The portions of the third layer metal that are connected to each other and that constitute the upper layer of the probe inspection pad are reinforced by the portion of the second layer metal that constitutes the dual-purpose portion.
[0014]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to FIGS. 1 to 3.
[0015]
(Embodiment 1)
FIG. 1 shows a configuration of a semiconductor device according to the first embodiment of the present invention. In FIG. 1, the 100s and 200s correspond to the same symbols in FIGS. 4 and 5. The difference between the input / output cells 301 of the present invention is that the distance L1 in FIG. 5 is increased to L2, the first power supply main line 123 is lowered, and the second layer probe for stacking only a part of the probe inspection pads. An inspection pad metal 300 and a probe inspection pad metal contact 310 for connecting the third layer and the second layer of the probe inspection pad are provided.
[0016]
That is, the first second-layer power supply trunk line 123 is moved in a direction to reduce the overlap with the third-layer probe inspection pad metal 210 to improve the strength of the probe inspection pad metal in the same area as FIG. The target second layer probe inspection pad metal 300 is partially formed to be laminated.
[0017]
With this structure, as in FIG. 5, a part of the probe inspection pad is a laminated pad with a small area, so that it can have a strength enough to withstand a plurality of probe inspections.
[0018]
(Embodiment 2)
FIG. 2 shows a configuration of a semiconductor device according to the second embodiment of the present invention. In FIG. 2, the 100s and 200s correspond to the same symbols in FIGS. 4 and 5, and the 300s correspond to the same symbols in FIG. The difference between the input / output cells 401 of the present invention is that the distance L1 in FIG. 5 is increased to L3, thereby securing a stacked pad forming region 400 for stacking the entire region of the probe test pad, as shown in FIG. The region of the second layer probe inspection pad metal 300 is the entire region of the third layer probe inspection pad metal 210, and the probe of the inspection apparatus is taken as close to the third layer pad metal (bonding pad) 110 as possible. Therefore, the first power supply trunk line 115 is moved.
[0019]
With this structure, an input / output cell 401 having a larger area than that of FIG. 5 but a smaller area than that of FIG. 4 can be realized. be able to.
[0020]
(Embodiment 3)
FIG. 3 shows a configuration of a semiconductor device according to the third embodiment of the present invention. The first and second embodiments are the case of the input / output cell, but here, the case of the power supply terminal cell for supplying the power supply voltage will be described. In FIG. 3, numbers 100 and 200 correspond to the same reference numerals in FIGS. The power terminal cell 501 of the present invention is different from the first second-layer power trunk (123 in FIGS. 1 to 4) and the second-layer probe test pad metal (300 in FIGS. 1 and 2). By providing the dual-purpose portion 500, the entire region of the third-layer probe inspection pad metal 210 is laminated in the same area as in FIG. Reference numeral 502 denotes a pad metal contact for probe inspection.
[0021]
With this structure, in the power supply terminal cell, a part of the probe test pad becomes a laminated pad with a small area as in FIG. 5, so that it is strong enough to withstand a plurality of probe tests.
[0022]
【The invention's effect】
As described above, according to the semiconductor device of the present invention, there is an effect that the strength of the probe inspection pad metal can be improved with a small area.
[Brief description of the drawings]
FIGS. 1A and 1B are a plan view and a cross-sectional view, respectively, of a semiconductor device according to a first embodiment of the present invention.
FIGS. 2A and 2B are a plan view and a cross-sectional view, respectively, of a semiconductor device according to a second embodiment of the present invention.
FIGS. 3A and 3B are a plan view and a cross-sectional view, respectively, of a semiconductor device according to a third embodiment of the present invention.
4A and 4B are a plan view and a cross-sectional view, respectively, of a semiconductor device according to a first conventional example.
FIGS. 5A and 5B are a plan view and a cross-sectional view of a semiconductor device according to a second conventional example, respectively.
[Explanation of symbols]
101, 201, 301, 401 I / O cell 110 Third layer pad metal 111 N channel output / protection transistor unit 112 P channel output / protection transistor unit 113 Output prebuffer unit 114 Third layer ground trunk 115 First third layer Power trunk line 116 Second third layer power trunk line 117 Pad metal contact 118 Ground trunk line contact 119 First power trunk line contact 120 Second power trunk line contact 121 Second layer pad metal 122 Second layer ground trunk line 123 First first Second-layer power supply trunk 124 Second second-layer power supply trunk 125 Pad metal contact 126 First layer metal 127 Silicon substrate 210 Third layer probe inspection pad metal 300 Second layer probe inspection pad metal 310 Probe inspection pad metal contact 400 Laminated pad forming region 500 Combined portion 501 of power supply main line for first layer 2 and pad metal for second layer probe inspection 502 Power supply terminal cell 502 Pad metal contact for probe inspection

Claims (3)

A semiconductor device employing a three-layer metal process,
In an input / output cell for performing signal input / output of the semiconductor device,
An N-channel transistor section;
A P-channel transistor section;
A first layer metal provided on the two transistor parts for connection to the two transistor parts;
A second layer metal constituting a power source trunk line and a ground trunk line for supplying a fixed potential to each of the transistor parts, and a lower layer of a probe inspection pad;
A third layer metal constituting the bonding pad and the upper layer of the probe inspection pad;
The first layer, the second layer, and the third layer metal are located immediately above the two transistor parts,
The third layer metal constituting the bonding pad and the upper layer of the probe inspection pad, the portion of the second layer metal constituting the lower layer of the probe inspection pad, and the first layer metal are pad metal Connected to each other through contacts , and
A portion of the third layer metal that constitutes an upper layer of the probe inspection pad is reinforced by a lower layer of the probe inspection pad made of the second layer metal. The semiconductor device according to claim 1,
The lower layer of the probe inspection pad in the second layer metal is provided between the power supply trunk line and the ground trunk line,
A semiconductor device characterized in that the entire region of the probe inspection pad is laminated. A semiconductor device employing a three-layer metal process,
In the power supply terminal cell for inputting the power supply voltage of the semiconductor device,
An N-channel transistor section;
A P-channel transistor section;
A first layer metal provided on the two transistor parts for connection to the two transistor parts;
A first portion that has a function of a power supply trunk line that supplies a potential to the P-channel transistor section and serves as a lower layer of a probe inspection pad, and a ground trunk line that supplies a potential to the N-channel transistor section. Two-layer metal,
A third layer metal constituting the bonding pad and the upper layer of the probe inspection pad;
The first layer, the second layer, and the third layer metal are located immediately above the two transistor parts,
The third layer metal constituting the bonding pad and the upper layer of the probe inspection pad, the portion of the second layer metal constituting the shared portion, and the first layer metal via a pad metal contact Connected to each other, and
A portion of the third layer metal that constitutes the upper layer of the probe inspection pad is reinforced by a portion of the second layer metal that constitutes the shared portion.

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