JP3812571B2 - Manufacturing method of heat sink for semiconductor device - Google Patents

Manufacturing method of heat sink for semiconductor device Download PDF

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Publication number
JP3812571B2
JP3812571B2 JP2004086261A JP2004086261A JP3812571B2 JP 3812571 B2 JP3812571 B2 JP 3812571B2 JP 2004086261 A JP2004086261 A JP 2004086261A JP 2004086261 A JP2004086261 A JP 2004086261A JP 3812571 B2 JP3812571 B2 JP 3812571B2
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metal plate
heat sink
manufacturing
die
semiconductor device
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JP2005276985A (en
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富雄 妹尾
豊 田中
広志 真田
純一 若林
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Panasonic Corp
Panasonic Holdings Corp
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Panasonic Corp
Matsushita Electric Industrial Co Ltd
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Description

本発明は半導体装置用放熱板の製造方法に関するものである。   The present invention relates to a method for manufacturing a heat sink for a semiconductor device.

従来の半導体装置用放熱板の製造方法としては、金属製プレートを切削加工やプレス加工により形成しているものがあった（例えば、特許文献１参照）。   As a conventional method for manufacturing a heat sink for a semiconductor device, there is a method in which a metal plate is formed by cutting or pressing (see, for example, Patent Document 1).

図２は、前記特許文献１に記載された従来の半導体装置用放熱板の製造方法を示すものである。   FIG. 2 shows a conventional method of manufacturing a heat sink for a semiconductor device described in Patent Document 1.

図２において、金属製プレート１０１の一面側に突出する凸部１０２をプレス加工によって形成し、凸部１０２の第一主面１０３に形成された平坦面に、半導体素子（図示せず）が搭載される半導体装置用放熱板を製造する際に、凸部１０２を金属製プレート１０１の一面側に突出させた後、平坦部を備えた金属製プレート１０１の凸部１０２に対応する凹部１０４が形成されたパンチ１０５と、平坦部を備えたダイ１０６との間に、パンチ１０５の凹部１０４の底面と金属製プレート１０１の凸部１０２の第一主面１０３とを当接させると共に、パンチ１０５の凹部１０４形成面と金属製プレート１０１の凸部１０２形成面との間にクリアランスを設けて挟み込み、次いで、パンチ１０５とダイ１０６とによって挟み込まれた金属製プレート１０１を加圧しつつ加熱処理を施して金属製プレート１０１の凸部１０２の第一主面１０３を平坦化していた。
特開平１１−１８６４７４号公報 In FIG. 2, a convex portion 102 protruding to one surface side of the metal plate 101 is formed by pressing, and a semiconductor element (not shown) is mounted on a flat surface formed on the first main surface 103 of the convex portion 102. In manufacturing a heat sink for a semiconductor device to be manufactured, after the convex portion 102 is protruded to one surface side of the metal plate 101, a concave portion 104 corresponding to the convex portion 102 of the metal plate 101 having a flat portion is formed. The bottom surface of the concave portion 104 of the punch 105 and the first main surface 103 of the convex portion 102 of the metal plate 101 are brought into contact with each other between the punch 105 and the die 106 having a flat portion. A metal plate is sandwiched between the punch 104 and the die 106 by providing a clearance between the recess 104 formation surface and the projection 102 formation surface of the metal plate 101. 101 is subjected to pressurized while heating the first major surface 103 of the convex portion 102 of the metal plate 101 has been flattened.
JP-A-11-186474

しかしながら、前記従来の構成では、金属製プレート１０１に凸部１０２を形成する時および凸部１０２の第一主面１０３に平坦面を形成する時に、パンチ１０５、ダイ１０６に油層が発生し、その状態でプレス加工された場合、金属製プレート１０１側に発生しているバリが壁となり、ダイ１０６に油層が抱き込まれた状態となり、その油層により放熱板表面に荒れが発生し、後に搭載される半導体素子（図示せず）の搭載に悪い影響を与えるという課題を有していた。   However, in the conventional configuration, when the convex portion 102 is formed on the metal plate 101 and when the flat surface is formed on the first main surface 103 of the convex portion 102, an oil layer is generated on the punch 105 and the die 106. When pressed in a state, the burr generated on the metal plate 101 side becomes a wall and the oil layer is embraced by the die 106. The oil layer causes the surface of the heat sink to become rough and is mounted later. There is a problem of adversely affecting the mounting of a semiconductor element (not shown).

本発明は、前記従来の課題を解決するもので、放熱板表面に荒れを発生させる事のない半導体装置用放熱板の製造方法を提供することを目的とする。   SUMMARY OF THE INVENTION The present invention solves the above-described conventional problems, and an object thereof is to provide a method of manufacturing a heat sink for a semiconductor device that does not cause a rough surface on the heat sink.

前記従来の課題を解決するために、本発明の半導体装置用放熱板の製造方法は、金属製プレートにプレス加工を加えて半導体装置用放熱板を製造する方法において、第一ダイと第一パンチにより金属製プレートのバリ除去を行うバリ除去工程と、金属製プレートの第一主面の裏面に勾配部を形成する勾配形成工程と、金属製プレートの第一主面に段差を形成する段差形成工程とからなる半導体装置用放熱板の製造方法である。 In order to solve the above-described conventional problems, a method for manufacturing a heat sink for a semiconductor device according to the present invention includes: a first die and a first punch in a method for manufacturing a heat sink for a semiconductor device by pressing a metal plate; A deburring process for removing burrs on the metal plate, a gradient forming process for forming a gradient portion on the back surface of the first main surface of the metal plate, and a step formation for forming a step on the first main surface of the metal plate The manufacturing method of the heat sink for semiconductor devices which consists of a process .

本構成によって、第一ダイと金属製プレートの間で起こる油層による金属製プレートの表面荒れを防ぐことができる。   With this configuration, it is possible to prevent the metal plate from being roughened by the oil layer that occurs between the first die and the metal plate.

以上のように、本発明の半導体装置用放熱板の製造方法によれば、第一ダイと金属製プレートとの間に発生する油層を除去しながら放熱板を形成することができる。   As mentioned above, according to the manufacturing method of the heat sink for semiconductor devices of this invention, a heat sink can be formed, removing the oil layer which generate | occur | produces between a 1st die | dye and metal plates.

以下本発明の実施の形態について、図面を参照しながら説明する。   Embodiments of the present invention will be described below with reference to the drawings.

（実施の形態１）
図１は、本発明の実施の形態における半導体装置用放熱板の製造方法の工程フローに沿った断面図である。 (Embodiment 1)
FIG. 1 is a cross-sectional view along a process flow of a method for manufacturing a semiconductor device heat sink in an embodiment of the present invention.

図１において、１は銅合金からなる金属製プレート、２は金属製プレート１をプレス加工した段差部、３は金属製プレート１の凹形状を形成する第一主面、４は面取りを行う第一ダイ、５は金属プレート１よりも大きな平坦部を備えた第一パンチ、６は第一ダイ４の底部、７は金属製プレート１に発生したバリ、８は金属製プレート１の平坦部を先行して押え込むブランクホルダー、９は第二パンチ、１０は第二ダイである。   In FIG. 1, 1 is a metal plate made of a copper alloy, 2 is a stepped portion formed by pressing the metal plate 1, 3 is a first main surface forming a concave shape of the metal plate 1, and 4 is a chamfered first plate. One die, 5 is a first punch having a flat portion larger than the metal plate 1, 6 is a bottom portion of the first die 4, 7 is a burr generated on the metal plate 1, and 8 is a flat portion of the metal plate 1. A blank holder for pressing in advance, 9 is a second punch, and 10 is a second die.

詳細な構成を下記に説明する。   A detailed configuration will be described below.

一対の第一パンチ５と第一ダイ４に金属製プレート１を載置する（図１（ａ））。このとき、バリ７を下側とし第一ダイ４上に金属製プレート１を載置する。   The metal plate 1 is placed on the pair of first punches 5 and the first die 4 (FIG. 1A). At this time, the metal plate 1 is placed on the first die 4 with the burr 7 on the lower side.

第一パンチ５と第一ダイ４とにより勾配形成加工を行い勾配部１１を備えた中間加工物を成形する（図１（ｂ）（ｃ））。このとき第一ダイ４には、平坦部を備えた第一ダイ底面６を有している。さらに第一ダイ底面６から開口部に向けて勾配部１１が施されている。この勾配部１１は金属製プレート１に発生しているバリ７を除去すると共に、金属製プレート１にバリ７とは逆方向に勾配部１１と平坦部とを形成するものである。 A gradient forming process is performed by the first punch 5 and the first die 4 to form an intermediate workpiece having the gradient portion 11 (FIGS. 1B and 1C) . At this time, the first die 4 has a first die bottom surface 6 having a flat portion. Further, a gradient portion 11 is provided from the first die bottom surface 6 toward the opening. The gradient portion 11 removes the burr 7 generated on the metal plate 1 and forms the gradient portion 11 and a flat portion in the opposite direction to the burr 7 on the metal plate 1.

中間加工物の勾配加工側を第二ダイ１０側に載置し、ブランクホルダー８で中間加工物に与圧を加える（図１（ｄ））。このとき、ブランクホルダー８は中間加工物に中央から当接させる。これにより、油の逃げは中間加工物の中央から進み、中間加工物の勾配部との相乗効果により表面荒れの原因となる油層を除去するものである。   The gradient machining side of the intermediate workpiece is placed on the second die 10 side, and pressure is applied to the intermediate workpiece with the blank holder 8 (FIG. 1 (d)). At this time, the blank holder 8 is brought into contact with the intermediate workpiece from the center. As a result, oil escape proceeds from the center of the intermediate workpiece, and the oil layer that causes surface roughness is removed by a synergistic effect with the gradient portion of the intermediate workpiece.

第二パンチ９で中間加工物に段差加工を加える（図１（ｅ））。   Step processing is applied to the intermediate workpiece with the second punch 9 (FIG. 1 (e)).

上記製造方法により製造された半導体装置用放熱板である（図１（ｆ））。   It is the heat sink for semiconductor devices manufactured by the said manufacturing method (FIG.1 (f)).

プレス加工による金属製プレートの成形方法として有用であり、特に半導体装置用放熱板の製造方法に適している。   It is useful as a method for forming a metal plate by press working, and is particularly suitable for a method for manufacturing a heat sink for a semiconductor device.

本発明の実施の形態における半導体装置用放熱板の製造方法の工程フローに沿った断面図Sectional drawing along the process flow of the manufacturing method of the heat sink for semiconductor devices in embodiment of this invention 従来の半導体装置用放熱板の製造方法の工程フローに沿った断面図Sectional drawing along the process flow of the manufacturing method of the conventional heat sink for semiconductor devices

符号の説明Explanation of symbols

１ 金属製プレート
２ 段差部
３ 第一主面
４ 第一ダイ
５ 第一パンチ
６ 第一ダイ底面
７ バリ
８ ブランクホルダー
９ 第二パンチ
１０ 第二ダイ
１１ 勾配部
１０１ 金属製プレート
１０２ 凸部
１０３ 第一主面
１０４ 凹部
１０５ パンチ
１０６ ダイ DESCRIPTION OF SYMBOLS 1 Metal plate 2 Step part 3 1st main surface 4 1st die 5 1st punch 6 1st die bottom face 7 Burr 8 Blank holder 9 2nd punch 10 2nd die
DESCRIPTION OF SYMBOLS 11 Gradient part 101 Metal plate 102 Convex part 103 1st main surface 104 Concave part 105 Punch 106 Die

Claims (2)

金属製プレートにプレス加工を加えて半導体装置用放熱板を製造する方法において、第一ダイと第一パンチにより金属製プレートのバリ除去を行うバリ除去工程と、金属製プレートの第一主面の裏面に勾配部を形成する勾配形成工程と、金属製プレートの第一主面に段差を形成する段差形成工程とを備えた半導体装置用放熱板の製造方法。 In a method of manufacturing a heat sink for a semiconductor device by pressing a metal plate, a burr removing step for removing the burr of the metal plate with a first die and a first punch, and a first main surface of the metal plate A method of manufacturing a heat sink for a semiconductor device , comprising: a gradient forming step for forming a gradient portion on the back surface; and a step forming step for forming a step on a first main surface of the metal plate . 前記ダイは凹部を備え、前記凹部の底面に平坦部が形成され、前記平坦部から前記凹部開口部に連続した勾配部を備え、前記勾配部により前記金属製プレートのバリ除去と勾配形成とを同時に行うことを特徴とする請求項１に記載の半導体装置用放熱板の製造方法。 The die includes a concave portion, a flat portion is formed on a bottom surface of the concave portion, and includes a gradient portion that is continuous from the flat portion to the concave portion opening portion, and the metal plate is deburred and the gradient is formed by the gradient portion. The method for manufacturing a heat sink for a semiconductor device according to claim 1, wherein the method is performed simultaneously.
JP2004086261A 2004-03-24 2004-03-24 Manufacturing method of heat sink for semiconductor device Expired - Fee Related JP3812571B2 (en)

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