JP3795192B2 - Deflector, method of manufacturing the same, and electron beam apparatus - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a deflector that deflects an electron beam by applying an electric field to the electron beam, a method for manufacturing the deflector, and an electron beam apparatus, and more particularly, a small deflector having a large deflection angle, a method for manufacturing the deflector, and an electron using the deflector. The present invention relates to a beam device.
[0002]
[Prior art]
The electron beam device irradiates an electron beam at a desired position on a target by deflecting the electron beam emitted from the electron gun using a deflector.
An outline of the electron beam apparatus will be described with reference to FIG. FIG. 15 is a conceptual diagram of an electron beam apparatus.
[0003]
As shown in FIG. 15, the deflector 110 is provided with a plurality of deflection electrodes 132a, 132b,. Although eight deflection electrodes 132a, 132b,... Are provided so that the electron beam can be freely deflected, only two deflection electrodes 132a, 132b are shown for convenience in FIG. A deflector having eight deflection electrodes is generally called an octupole electrode.
[0004]
An electron beam emitted from the electron gun 200 with an energy of E (eV) passes through the beam passage hole 201 between the deflection electrodes 132a and 132b to which a voltage is applied, and is deflected by an electric field generated between the deflection electrodes 132a and 132b. The target 202 is irradiated after being deflected by an angle θ (rad). When the distance between the deflection electrodes 132a and 132b is d (mm), the potential difference applied between the deflection electrodes 132a and 132b is V (V), and the length of the deflection electrodes 132a and 132b in the traveling direction of the electron beam is L (mm). , Deflection angle θ is
θ = (V × L) / (E × d) (1)
Can be expressed as
[0005]
By the way, it is desirable that the deflector 110 can realize a large deflection angle θ so that a wide area of the target 202 can be irradiated with an electron beam. However, since it is not practical to extremely increase the value of the potential difference V or extremely reduce the value of the electron energy E, the desired deflection angle is usually set by appropriately setting the length L or the distance d. It is desirable to obtain θ.
[0006]
Conventionally, a deflector capable of realizing a desired deflection angle θ has been provided by forming the deflector using a machining technique.
However, since it is difficult to perform fine processing with the machining technique, the conventional deflector formed by using the machining technique has a large shape of 5 to 10 mm. In recent years, downsizing of a deflector has been demanded in order to realize a small electron beam apparatus. Therefore, a technique for forming a deflector using a microfabrication technique for a semiconductor, a technique for forming a thick conductive film on a semiconductor substrate, or the like has been proposed.
[0007]
The proposed deflector will be described with reference to FIG. FIG. 16 is a top view and a cross-sectional view along line AA ′ showing the proposed deflector.
In the proposed deflector 109, deflection electrodes 133a to 133h are formed on the semiconductor substrate 111 by using a technique of forming a thick conductive film on the semiconductor substrate. In such a deflector 109, the electron beam passing through the beam passage hole 130 is deflected by applying a predetermined voltage to the deflection electrodes 133a to 133h.
[0008]
[Problems to be solved by the invention]
However, the proposed technique attempts to increase the length L of the deflection electrodes 133a to 133h in the electron traveling direction by using a technique of forming a thick conductive film on the semiconductor substrate 111. In the CVD method, the limit value is about several tens of μm. If the plating method is used, it is considered that the length L can be increased to about 100 μm, but it is difficult to form a film with high accuracy. In addition, although it is conceivable to stack a plurality of conductive films via an insulating film, the maximum number of layers is limited, and it is difficult to make the length L sufficiently long. In such a technique for forming a thick conductive film on a semiconductor substrate, the limit for forming a conductive film with high accuracy is considered to be about 30 μm.
[0009]
Assuming that the length L is 30 μm, the electron energy E is 1 keV, the potential difference V is 10 V, and the desired deflection angle θ is 30 mrad, calculation is performed by substituting each value into Equation (1), and the separation d is about 9 μm. Become. If a deflection angle θ of 30 mrad can be realized, for example, the distance from the deflector to the target can be 5 mm, the field of view can be 300 μm, and the deflector has sufficient deflection performance, but the separation d is as small as about 9 μm. Therefore, the uniform electric field region by the deflection electrodes 133a to 133h is narrowed, so that a good deflection performance cannot be obtained, and when it is incorporated in the electron beam apparatus, a strict alignment accuracy of 1 μm or less is required. Not suitable for practical use.
[0010]
As described above, in the proposed technique, the length L cannot be easily increased. Therefore, in order to obtain a desired deflection angle θ, the distance d must be reduced, and therefore the deflection performance is poor. Alignment at the time of assembly was difficult, so it was not practical. Therefore, there has been a strong demand for a technique that can easily increase the length L while using a semiconductor microfabrication technique.
[0011]
An object of the present invention is to provide a small deflector having a large deflection angle, a manufacturing method thereof, and an electron beam apparatus using the deflector.
[0012]
[Means for Solving the Problems]
The above object is a deflector in which a plurality of substrates are bonded through an insulating film, and a beam passage hole for passing an electron beam is opened in parallel to the bonding surface of the substrate, This is achieved by a deflector that deflects the electron beam passing through the beam passage hole by applying a predetermined voltage to the plurality of substrates. Thereby, since the beam passage hole can be formed long, it is possible to provide a small deflector having a large deflection angle θ.
[0013]
In the deflector described above, the cross section of the beam passage hole has a substantially point-symmetric shape with respect to a center point of the cross section, and is an opposing surface constituted by the substrate exposed in the beam passage hole. It is desirable that they are substantially parallel to each other.
In the deflector, it is preferable that the insulating film is recessed with respect to an end portion of the substrate exposed in the beam passage hole.
[0014]
In addition, the object is to form a first substrate that forms a first electrode, a first insulating film on the first substrate, and a second and third electrodes across a first opening region. A second substrate forming an electrode, and a fourth and fifth electrode formed on the second substrate via a second insulating film, with a second opening region on the first opening region being separated A sixth substrate formed on the third substrate via a third insulating film, with a third opening region on the second opening region separated by a third opening region A fourth substrate formed on the fourth substrate via a fourth insulating film, and a fifth substrate forming an eighth electrode, wherein the first to third opening regions are provided. An electron beam passing through a beam passing hole constituted by the deflector is deflected by applying a voltage to the first to eighth electrodes. It is. Thereby, since the beam passage hole can be formed long, it is possible to provide a small deflector having a large deflection angle θ.
[0015]
Another object of the present invention is to bond a plurality of substrates including a substrate in which an opening region is formed via an insulating film, and is configured by the opening region, and passes an electron beam parallel to the bonding surface of the substrate. This is achieved by a method of manufacturing a deflector characterized in that a beam passage hole is formed. Thereby, since the beam passage hole can be formed long, it is possible to provide a small deflector having a large deflection angle θ.
[0016]
In addition, the object is to provide a first substrate in which a first opening region is formed, a second substrate in which a second opening region is formed, and a third substrate in which a third opening region is formed. Are sequentially bonded through an insulating film, and a method of manufacturing a deflector in which a beam passage hole for passing an electron beam is configured by the first to third opening regions, A first opening region forming step of anisotropically etching the predetermined region and forming the first opening region so that a surface exposed by the etching spreads at a predetermined angle toward the second substrate; The second substrate is anisotropically etched so as to conform to the shape of the first opening region extending at an angle, and the surface exposed by the etching is substantially perpendicular to the second substrate. Second opening region forming process for forming two opening regions Then, the third substrate is anisotropically etched, and a third opening region whose surface exposed by the etching is spread at a predetermined angle toward the second substrate matches the shape of the second opening region. And a cutting step of cutting the bonded substrates so that the length of the beam passage hole is a predetermined length. This is achieved by the manufacturing method. Accordingly, a deflector having a long beam passage hole can be formed with high accuracy simply by forming the beam passage hole in parallel with the surface of the substrate and cutting the beam passage hole to have a predetermined length. Therefore, a small deflector having a large deflection angle θ can be provided.
[0017]
In the method for manufacturing a deflector, the second substrate and the second opening region may be substantially matched with each other before the second opening region forming step. A substrate bonding step for bonding the third substrate and an oxide film forming step for forming an oxide film on the exposed surfaces of the second and third substrates after the second opening region forming step. In the third opening region forming step, after the insulating film exposed in the second opening region is etched, the third substrate exposed in the second opening region is anisotropically etched. It is desirable to form the third opening region.
[0018]
In the above-described deflector manufacturing method, a silicon substrate having a plane orientation (100) is used as the first and third substrates, and a silicon substrate having a plane orientation (110) is used as the second substrate. It is desirable to use a potassium hydroxide solution as an etchant for the anisotropic etching.
Further, in the above method of manufacturing a deflector, the insulating film exposed in the beam passage hole may be etched so as to be recessed with respect to the end portion of the substrate exposed in the beam passage hole by isotropic etching. desirable.
[0019]
In the deflector manufacturing method, in the first opening region forming step, a first alignment mark is further formed on the first substrate, and in the second opening region forming step, the second opening region forming step is further performed. A second alignment mark is formed on the substrate, and the first substrate and the second substrate are aligned using the first and second alignment marks, and the first substrate And the second substrate are preferably bonded together.
[0020]
In the deflector manufacturing method, a plurality of the first opening regions are formed in the first opening region forming step, and a plurality of the second opening regions are formed in the second opening region forming step. Forming an alignment member into predetermined first and second opening regions to align the first substrate with the second substrate, and then aligning the first substrate with the second substrate. It is desirable to attach the substrate.
[0021]
In the above method for manufacturing a deflector, the alignment member is preferably a substantially cylindrical fiber.
In the method for manufacturing a deflector, it is preferable that the positioning member is a substantially spherical member.
In addition, the object is to provide a first substrate to be a first electrode, a second substrate in which a first opening region is formed, a third substrate in which a second opening region is formed, and a third substrate. The fourth substrate in which the opening region is formed and the fifth substrate to be the eighth electrode are sequentially bonded via an insulating film, and the beam passage hole for passing the electron beam has the first to the above-mentioned A method of manufacturing a deflector comprising a third opening region, the step of bonding the first substrate and the second substrate through the insulating film, and the second A predetermined region of the substrate is anisotropically etched, the first opening region is formed so that a surface exposed by the etching spreads at a predetermined angle toward the surface of the second substrate, and the first opening region is formed. Forming a second and a third electrode separated by an opening region of A first electrode component forming step of forming a first electrode component having first to third electrodes, and the third substrate, the fourth substrate, and the fifth substrate through the insulating film. The third substrate is anisotropically etched so as to match the shape of the first opening region, and the surface exposed by the etching is substantially perpendicular to the third substrate. Forming the second opening region and forming the fourth and fifth electrodes separated by the second opening region, and etching the insulating film exposed in the second opening region And anisotropically etching the fourth substrate exposed in the second opening region, and the third opening is formed so that a surface exposed by the etching spreads at a predetermined angle toward the third substrate. Forming a region in the third opening region; Forming a sixth electrode and a seventh electrode separated from each other, a second electrode component forming step for forming a second electrode component having the fourth to eighth electrodes, and the first electrode The electrode component bonding step of bonding the electrode component and the second electrode component, and the bonded first electrode component and second electrode component, the length of the beam passage hole being a predetermined length It has the cutting process cut | disconnected so that it may become, It achieves by the manufacturing method of the deflector characterized by the above-mentioned. Accordingly, a deflector having a long beam passage hole can be formed with high accuracy simply by forming the beam passage hole in parallel with the surface of the substrate and cutting the beam passage hole to have a predetermined length. Therefore, a small deflector having a large deflection angle θ can be provided.
[0022]
The object is achieved by an electron beam apparatus comprising: an electron gun; and the deflector according to any one of claims 1 to 4, which deflects an electron beam emitted from the electron gun. Is done. Thereby, a small deflector having a large deflection angle θ is used, so that a small electron beam apparatus can be provided.
[0023]
DETAILED DESCRIPTION OF THE INVENTION
[First Embodiment]
A deflector according to a first embodiment of the present invention will be described with reference to FIGS. FIG. 1 is a perspective view showing a deflector according to the present embodiment. 2 to 8 are process cross-sectional views illustrating the manufacturing method of the deflector according to the present embodiment.
[0024]
As shown in FIG. 1, the deflector 10 according to the present embodiment is configured by bonding five silicon substrates 12, 14, 16, 18, 20 via silicon oxide films 22, 24, 26, 28. Has been.
The silicon substrates 14, 16, and 18 are provided with predetermined opening regions, respectively, and a beam passage hole 30 for passing an electron beam is constituted by these opening regions. The opening area of the silicon substrate 14 and the opening area of the silicon substrate 18 are formed so as to expand in a tapered shape toward the silicon substrate 16 side. The opening area of the silicon substrate 16 is formed perpendicular to the silicon substrate 16.
[0025]
The silicon substrates 12, 14, 16, 18, 20 separated or insulated by the beam passage hole 30 and the silicon oxide films 22, 24, 26, 28 are deflection electrodes 32 a for generating an electric field in the beam passage hole 30. Thru 32h.
The deflection electrodes 32a to 32h are connected to a power source 36 by wiring lines 34, respectively.
[0026]
The electron beam can be deflected to a desired deflection angle θ by passing the electron beam through the beam passage hole 30 of the deflector 10 and applying a predetermined voltage to the deflection electrodes 32a to 32h. For example, if the electron energy E is 1 keV, the distance d between the deflection electrodes is 500 to 1000 μm, the potential difference V applied between the deflection electrodes is 10 V, and the length L of the deflection electrode in the traveling direction of the electron beam is 2 to 3 mm. A deflector 10 having a deflection angle θ of about 30 mrad can be provided.
[0027]
Next, the method for manufacturing the deflector according to the present embodiment will be described.
The deflector manufacturing method according to the present embodiment is characterized in that after two types of electrode parts are formed, these two types of electrode parts are joined to form a deflector.
First, the manufacturing method of one electrode component is demonstrated.
As shown in FIG. 2A, a silicon substrate 18 having a thickness of 245 μm and a plane orientation (100) having a silicon oxide film 52 having a thickness of 500 nm formed on one surface is prepared. In addition, a silicon substrate 20 having a thickness of 300 μm and a plane orientation (100) in which silicon oxide films 28 and 58 having a thickness of 500 nm are formed on both surfaces is prepared.
[0028]
Next, as shown in FIG. 2B, the silicon substrate 18 and the silicon oxide film 28 are bonded. As a bonding method, a direct bonding method for bonding by heating may be used, or an anodic bonding method for bonding by heating while applying a voltage may be used. The alignment of the silicon substrate 18 and the silicon oxide film 28 may be performed by the outer shape.
[0029]
Next, a resist pattern having an opening for forming a beam passage hole 30 having a length of 5 mm and a width of 646 μm and an opening for forming an alignment mark having a width of several μm is formed on the silicon oxide film 52. . Thereafter, the silicon oxide film 52 is etched by RIE (Reactive Ion Etching) using the resist pattern as a mask. The etching gas is CF _Four And H ₂ A mixed gas is used. Then, after the etching is completed, the resist pattern is removed (see FIG. 3A).
[0030]
Next, using the etched silicon oxide film 52 as a mask, the silicon substrate 18 is etched using a KOH aqueous solution having a concentration of 49 wt% and a temperature of 85 ° C. When the etching is performed for about 180 minutes, the surface of the silicon oxide film 28 is exposed, and the etching is stopped at this point. In the wet etching using KOH aqueous solution, the silicon substrate is anisotropically etched so as to leave the (111) plane, so the silicon substrate 18 is etched at an angle of 54.7 degrees so that the (111) plane is exposed. Will be. In this way, a tapered opening region 62 can be formed in the silicon substrate 18. At this time, the alignment mark 64 is also formed on the silicon substrate 18. In the silicon substrate 18 in the vicinity of the alignment mark 64, the etching stops when the (111) plane is exposed, so that the problem that the alignment mark 64 becomes extremely large does not occur (see FIG. 3B).
[0031]
Next, the exposed silicon oxide films 28, 52, and 58 are removed using a BHF (Buffered Hydrogen Fluoride) solution, and the silicon oxide film 28 is etched in the lateral direction. At this time, it is desirable to lengthen the etching time so that the end portion of the silicon oxide film 28 is largely etched laterally with respect to the end portions of the silicon substrates 18 and 20. Thus, by denting the ends of the silicon oxide film 28 with respect to the ends of the silicon substrates 18 and 20, charges are charged up in the silicon oxide film 28 when the electron beam passes through the beam passage hole 30. Can be prevented (see FIG. 3C).
[0032]
In this way, the electrode component 66 is formed.
Next, a method for manufacturing the other electrode component will be described.
As shown in FIG. 4A, a silicon substrate 16 having a thickness of 300 μm and a plane orientation (110) in which silicon oxide films 26 and 24 having a thickness of 500 nm are formed on both surfaces is prepared. Also, a bare silicon substrate 14 having a plane orientation (100) is prepared. In addition, a silicon substrate 12 having a thickness of 300 μm and a plane orientation (100) in which silicon oxide films 22 and 82 having a thickness of 500 nm are formed on both surfaces is prepared. At this time, it is desirable that the silicon substrates 12 and 14 have a shape smaller than that of the silicon substrate 16 so as not to cover alignment marks formed on the silicon substrate 16 in a later process.
[0033]
Next, as shown in FIG. 4B, the silicon oxide film 24 and the silicon substrate 14, and the silicon substrate 14 and the silicon oxide film 22 are bonded together by a direct bonding method. As a bonding method, not only a direct bonding method but also an anodic bonding method may be used.
Next, as shown in FIG. 4C, a Si film having a thickness of 1.5 μm is formed on the silicon oxide film 26 by a CVD (Chemical Vapor Deposition) method. _Three N _Four A film 84 is formed.
[0034]
Next, Si _Three N _Four On the film 84, a resist pattern having an opening for forming the beam passage hole 30 having a length of 5 mm and a width of 646 μm and an opening for forming an alignment mark having a width of several μm is formed. Thereafter, Si is performed by RIE using the resist pattern as a mask. _Three N _Four The film 84 and the silicon oxide film 26 are etched. The etching gas is CF _Four And H ₂ A mixed gas is used. Then, after the etching is completed, the resist pattern is removed (see FIG. 5A).
[0035]
Next, etched Si _Three N _Four Using the film 84 and the silicon oxide film 26 as a mask, the silicon substrate 16 is etched using a KOH aqueous solution having a concentration of 49 wt% and a temperature of 85 ° C. When etching is performed for about 150 minutes, the surface of the silicon oxide film 24 is exposed, and the etching is stopped at this point. In the wet etching using KOH aqueous solution, the silicon substrate is anisotropically etched so as to leave the (111) plane, so that the silicon substrate with the plane orientation (100) is etched in a tapered shape with respect to the silicon substrate. The (110) silicon substrate is etched perpendicular to the silicon substrate. Since the plane orientation of the silicon substrate 16 is (110), the silicon substrate 16 is etched perpendicular to the silicon substrate 16. In this way, the opening region 86 can be formed in the silicon substrate 16. At this time, the alignment mark 88 is also formed on the silicon substrate 16. Since the alignment mark 88 is etched to expose the (111) plane, the alignment mark 88 perpendicular to the silicon substrate 16 can be formed (see FIG. 5B).
[0036]
Next, as shown in FIG. 5C, a silicon oxide film 90 having a thickness of 500 nm is formed on the exposed surfaces of the silicon substrates 12, 14, and 16.
Next, Si _Three N _Four Using the film 84 as a mask, the silicon oxide film 24 is etched by RIE. The etching gas is CF _Four And H ₂ (See FIG. 6A).
[0037]
Next, the silicon oxide films 24, 82, 90 and Si _Three N _Four Using the film 84 as a mask, the silicon substrate 14 is etched using a KOH aqueous solution having a concentration of 49 wt% and a temperature of 85 ° C. When etching is performed for about 180 minutes, the surface of the silicon oxide film 22 is exposed, and the etching is stopped at this point. At this time, the silicon substrate 14 is etched at an angle of 54.7 degrees so that the (111) plane is exposed. In this way, the tapered opening region 92 can be formed in the silicon substrate 14. The silicon substrates 12, 14, and 16 are etched by the KOH aqueous solution because the silicon oxide films 24, 82, and 90 are formed on the exposed surface other than the surface of the silicon substrate 14 exposed in the opening region 86. There is nothing (see FIG. 6B).
[0038]
Next, the silicon oxide films 22, 24, 82, and 90 are removed using a BHF solution, and the silicon oxide films 22, 24, and 26 are etched in the lateral direction (see FIG. 6C). At this time, it is desirable to lengthen the etching time so that the end portions of the silicon oxide films 22, 24, and 26 are largely etched in the lateral direction with respect to the end portions of the silicon substrates 12, 14, and 16. In this way, the end portions of the silicon oxide films 22, 24, and 26 are recessed with respect to the end portions of the silicon substrates 12, 14, and 16, so that when the electron beam passes through the beam passage hole 30, the silicon oxide films 22, It is possible to prevent the charges 24 and 26 from being charged up.
[0039]
Next, using phosphoric acid, Si _Three N _Four The film 84 is removed to form an electrode component 94 (see FIG. 6D).
The electrode component 66 and the electrode component 94 formed in this way are prepared (see FIG. 7A), alignment is performed using the alignment mark 64 and the alignment mark 88, and the silicon oxide film 26 and the silicon substrate 18 are aligned. Are joined by a direct joining method. As a bonding method, not only a direct bonding method but also an anodic bonding method may be used. In this way, when the electrode component 66 and the electrode component 94 are joined, the beam passage hole 30 including the opening regions 62, 86, and 92 is formed (see FIG. 7B).
[0040]
Next, when the silicon substrates 12, 14, 16, 18, 20 and the silicon oxide films 22, 24, 26, 28 are cut into a width of about 2 mm using a dicing saw, eight deflection electrodes 32a to 32h are obtained. A deflector can be formed (see FIG. 8).
As described above, according to the present embodiment, the beam passage hole is formed in parallel to the surface of the silicon substrate, and it is only necessary to cut the beam passage hole so as to have a predetermined length. Can be formed with high accuracy. Therefore, a small deflector having a large deflection angle θ can be provided.
[0041]
In addition, if a small deflector with a large deflection angle θ according to the present embodiment is used, a small electron beam apparatus can be provided.
[Second Embodiment]
A deflector according to a second embodiment of the present invention will be described with reference to FIGS. FIG. 9 is a top view showing a planar layout of the opening region in the deflector manufacturing method according to the present embodiment. 10 and 11 are process cross-sectional views illustrating the method of manufacturing the deflector according to the present embodiment. The same components as those in the deflector according to the first embodiment shown in FIGS. 1 to 8 are denoted by the same reference numerals, and description thereof is omitted or simplified.
[0042]
The deflector according to the present embodiment is the same as the deflector according to the first embodiment, but in this embodiment, the method of manufacturing the deflector is different from the method of manufacturing the deflector according to the first embodiment. The manufacturing method of the deflector according to the present embodiment is characterized in the alignment method when the electrode component 66 and the electrode component 94 are joined.
The manufacturing method of the deflector according to the present embodiment is that a plurality of deflectors are formed at the same time, the alignment marks 64 and 88 are not formed, and the glass fiber is fitted into the plurality of opening regions for alignment. This is the same as the deflector manufacturing method according to the first embodiment.
[0043]
In the present embodiment, the opening regions 62 and 62a of the electrode component 66 are laid out as shown in FIG. Note that the opening regions 62 a are formed at four locations in the same shape as the opening region 62.
Further, the opening regions 86, 86a, 92, and 92a of the electrode component 94 are laid out in the same manner as in FIG. In alignment in the subsequent process, the opening regions 86 and 92 face the opening region 62, and the opening regions 86a and 92a face the opening region 62a.
[0044]
A glass fiber 96 having a diameter of 646 μm is disposed in the opening region 62a of the electrode component 66 formed in this way, and the glass fiber 96 is bonded to the silicon substrate 18 by an anodic bonding method (see FIG. 10).
Next, the glass fiber 96 is matched with the opening regions 86a and 92a of the electrode component 94, and the electrode component 66 and the electrode component 94 are joined (see FIG. 11A).
[0045]
Next, by cutting into a predetermined shape, a plurality of deflectors 10 can be formed (see FIG. 11B).
[Third Embodiment]
A deflector according to a third embodiment of the present invention will be described with reference to FIGS. FIG. 12 is a top view showing a planar layout of the opening region in the deflector manufacturing method according to the present embodiment. 13 and 14 are process cross-sectional views showing the deflector manufacturing method according to the present embodiment. The same components as those in the deflector according to the first or second embodiment shown in FIGS. 1 to 11 are denoted by the same reference numerals, and description thereof is omitted or simplified.
[0046]
The deflector according to the present embodiment is the same as the deflector according to the second embodiment, and the manufacturing method of the present embodiment is different in the shapes of the opening regions 62a, 86a, and 92a, and the electrode component 66 and the electrode component 94. When aligning, it is the same as that of 2nd Embodiment except using a glass sphere instead of using a glass fiber.
In this embodiment, the opening regions 62 and 62a of the electrode component 66 are laid out as shown in FIG. As shown in FIG. 12, the shape of the opening region 62 is the same as that of the second embodiment, and the shape of the opening region 62a is 2 mm long and 646 μm wide. Since the length of the opening region 62a is made shorter than that of the second embodiment, the misalignment can be reduced even if the alignment is performed using the glass sphere.
[0047]
Further, the opening regions 86, 86a, 92, and 92a of the electrode component 94 are laid out in the same manner as in FIG. In alignment in the subsequent process, the opening regions 86 and 92 face the opening region 62, and the opening regions 86a and 92a face the opening region 62a.
A glass ball 102 having a diameter of 646 μm is disposed in the opening region 62a of the electrode component 66 formed in this way, and the glass ball 102 is bonded to the silicon substrate 18 by an anodic bonding method (see FIG. 13).
[0048]
Next, the glass sphere 102 is matched with the opening regions 86a and 92a of the electrode component 94, and the electrode component 66 and the electrode component 94 are joined (see FIG. 14A).
Next, a plurality of deflectors 10 can be formed by cutting into a predetermined shape (see FIG. 14B).
[Modified Embodiment]
The present invention is not limited to the above embodiment, and various modifications can be made.
[0049]
For example, in the second or third embodiment, the member fitted into the opening region of the electrode component for alignment is not limited to glass fiber or glass sphere, but any material that can be easily bonded to the silicon substrate is used. Materials may be used.
In the second or third embodiment, the shape of the opening region used for alignment is not limited to a rectangle, but may be a polygon or a circle.
[0050]
In the first to third embodiments, the number of deflection electrodes included in one deflector is not limited to eight, and a desired deflection angle θ can be obtained when a voltage is applied to the deflection electrodes. If so, the number of deflection electrodes may be any number. For example, a quadrupole electrode can be formed by bonding three substrates.
Further, in the second or third embodiment, the number of places where the member for positioning is fitted is not limited to four, and the positioning can be achieved by fitting in a plurality of places.
[0051]
Further, the deflectors shown in the first to third embodiments can deflect not only the electron beam but also a charged particle beam other than the electron beam.
[0052]
【The invention's effect】
As described above, according to the present invention, it is only necessary to form the beam passage hole parallel to the surface of the silicon substrate and cut the beam passage hole so that the length of the beam passage hole becomes a predetermined length. A long deflector can be formed with high accuracy. Thereby, it is possible to provide a small deflector having a large deflection angle θ and a manufacturing method thereof. Since it is only necessary to form a beam passage hole parallel to the surface of the silicon substrate and cut the length of the beam passage hole to a predetermined length, it is possible to accurately form a deflector having a long beam passage hole. it can. Thereby, it is possible to provide a small deflector having a large deflection angle θ and a manufacturing method thereof.
[0053]
In addition, according to the present invention, it is possible to provide a small electron beam apparatus using a small deflector having a large deflection angle θ.
[Brief description of the drawings]
FIG. 1 is a perspective view showing a deflector according to a first embodiment of the present invention.
FIG. 2 is a process cross-sectional view (No. 1) showing the deflector manufacturing method according to the first embodiment of the present invention;
FIG. 3 is a process cross-sectional view (part 2) showing the deflector manufacturing method according to the first embodiment of the present invention;
FIG. 4 is a process cross-sectional view (part 3) illustrating the deflector manufacturing method according to the first embodiment of the present invention;
FIG. 5 is a process cross-sectional view (part 4) illustrating the deflector manufacturing method according to the first embodiment of the present invention;
FIG. 6 is a process cross-sectional view (part 5) illustrating the deflector manufacturing method according to the first embodiment of the present invention;
FIG. 7 is a process cross-sectional view (part 6) illustrating the deflector manufacturing method according to the first embodiment of the present invention;
FIG. 8 is a process cross-sectional view (part 7) illustrating the deflector manufacturing method according to the first embodiment of the present invention;
FIG. 9 is a top view showing a planar layout of an opening region in the deflector manufacturing method according to the second embodiment of the present invention.
FIG. 10 is a process cross-sectional view (part 1) illustrating the deflector manufacturing method according to the second embodiment of the invention;
FIG. 11 is a process cross-sectional view (part 2) illustrating the deflector manufacturing method according to the second embodiment of the present invention;
FIG. 12 is a top view showing a planar layout of an opening region in the deflector manufacturing method according to the third embodiment of the present invention.
FIG. 13 is a process cross-sectional view (part 1) illustrating the deflector manufacturing method according to the third embodiment of the present invention;
FIG. 14 is a process cross-sectional view (part 2) illustrating the deflector manufacturing method according to the third embodiment of the present invention;
FIG. 15 is a conceptual diagram of an electron beam apparatus.
FIGS. 16A and 16B are a top view and a cross-sectional view taken along line AA ′ showing the proposed deflector. FIGS.
[Explanation of symbols]
10. Deflector
12, 14, 16, 18, 20 ... silicon substrate
22, 24, 26, 28 ... silicon oxide film
30 ... Beam passage hole
32a thru 32h ... deflection electrode
34 ... Wiring line
36 ... Power supply
52, 58 ... silicon oxide film
62, 62a ... opening area
64 ... alignment mark
66 ... Electrode parts
82 ... Silicon oxide film
84 ... Si _Three N _Four film
86, 86a ... Opening area
88 ... Alignment mark
90 ... Silicon oxide film
92, 92a ... Opening area
94 ... Electrode parts
96 ... glass fiber
102 ... Glass sphere
109: Deflector
110: deflector
111 ... Semiconductor substrate
130: Beam passage hole
132a to 132h: deflection electrode
133a thru 133h ... deflection electrode
200 ... electron gun
201: Beam passage hole
202 ... Target
d: Separation between deflection electrodes
L: Length of electron beam in the direction of travel
θ: Deflection angle

Claims (15)

A plurality of substrates which are bonded to each other through an insulating film, and in which a beam passage hole for passing an electron beam is opened in parallel to the bonding surface of the substrates, and the plurality of substrates And deflecting the electron beam passing through the beam passage hole by applying a predetermined voltage to the deflector. The deflector according to claim 1.
The cross section of the beam passage hole has a substantially point-symmetric shape with respect to the center point of the cross section,
2. The deflector according to claim 1, wherein the opposing surfaces constituted by the substrate exposed in the beam passage hole are substantially parallel to each other. The deflector according to claim 1 or 2,
The deflector according to claim 1, wherein the insulating film is recessed with respect to an end portion of the substrate exposed to the beam passage hole. A first substrate forming a first electrode;
A second substrate formed on the first substrate via a first insulating film and forming second and third electrodes across a first opening region;
A third substrate formed on the second substrate via a second insulating film and forming fourth and fifth electrodes across the second opening region on the first opening region;
A fourth substrate formed on the third substrate via a third insulating film and forming sixth and seventh electrodes across the third opening region on the second opening region;
A fifth substrate formed on the fourth substrate via a fourth insulating film and forming an eighth electrode;
A deflector for deflecting an electron beam passing through a beam passage formed of the first to third aperture regions by applying a voltage to the first to eighth electrodes. A plurality of substrates including a substrate in which an opening region is formed are bonded together via an insulating film, and a beam passage hole configured to pass through the opening region and to pass an electron beam parallel to the bonding surface of the substrate is formed. The manufacturing method of the deflector characterized by forming. The first substrate in which the first opening region is formed, the second substrate in which the second opening region is formed, and the third substrate in which the third opening region is formed sequentially through the insulating film A beam passing hole for passing an electron beam is composed of the first to third aperture regions,
A first opening for forming the first opening region by anisotropically etching the predetermined region of the first substrate and having a surface exposed by the etching spread at a predetermined angle toward the second substrate. A region forming step;
The second substrate is anisotropically etched so as to conform to the shape of the first opening region spreading at a predetermined angle, and the surface exposed by the etching is substantially perpendicular to the second substrate. A second opening region forming step of forming a second opening region;
The third substrate is anisotropically etched, and a third opening region whose surface exposed by etching is spread at a predetermined angle toward the second substrate is formed so as to match the shape of the second opening region. A third opening region forming step,
And a cutting step of cutting the bonded substrates so that the length of the beam passage hole is a predetermined length. In the manufacturing method of the deflector according to claim 6,
A substrate bonding step of bonding the second substrate and the third substrate so that the second opening region and the third opening region substantially match before the second opening region forming step. When,
An oxide film forming step of forming an oxide film on the exposed surfaces of the second and third substrates after the second opening region forming step;
In the third opening region forming step, the insulating film exposed in the second opening region is etched, and then the third substrate exposed in the second opening region is anisotropically etched. The manufacturing method of the deflector characterized by forming the opening area | region of this. In the manufacturing method of the deflector according to claim 6 or 7,
For the first and third substrates, a silicon substrate having a plane orientation (100) is used, and for the second substrate, a silicon substrate having a plane orientation (110) is used.
A method of manufacturing a deflector using a potassium hydroxide solution as an etchant for the anisotropic etching. In the manufacturing method of the deflector according to any one of claims 5 to 8,
A method of manufacturing a deflector, wherein the insulating film exposed in the beam passage hole is etched by isotropic etching so as to be recessed with respect to an end portion of the substrate exposed in the beam passage hole. In the manufacturing method of the deflector according to any one of claims 7 to 9,
In the first opening region forming step, a first alignment mark is further formed on the first substrate,
In the second opening region forming step, a second alignment mark is further formed on the second substrate,
The first substrate and the second substrate are aligned using the first and second alignment marks, and the first substrate and the second substrate are bonded to each other. A manufacturing method of a deflector. In the manufacturing method of the deflector according to any one of claims 7 to 9,
In the first opening region forming step, a plurality of the first opening regions are formed,
In the second opening region forming step, a plurality of the second opening regions are formed,
An alignment member is fitted into the predetermined first and second opening regions to align the first substrate and the second substrate, and the first substrate and the second substrate The manufacturing method of the deflector characterized by sticking together. In the manufacturing method of the deflector according to claim 11,
The method for manufacturing a deflector, wherein the alignment member is a substantially cylindrical fiber. In the manufacturing method of the deflector according to claim 11,
The deflector manufacturing method, wherein the alignment member is a substantially spherical member. A first substrate to be a first electrode, a second substrate in which a first opening region is formed, a third substrate in which a second opening region is formed, and a third opening region are formed. The fourth substrate and the fifth substrate to be the eighth electrode are sequentially bonded via an insulating film, and a beam passage hole for passing an electron beam is formed from the first to third opening regions. A method of manufacturing a deflector comprising:
The step of bonding the first substrate and the second substrate through the insulating film, anisotropic etching of a predetermined region of the second substrate, and the surface exposed by the etching is the second Forming the first opening region so as to spread at a predetermined angle toward the surface of the substrate, and forming the second and third electrodes separated by the first opening region; A first electrode component forming step of forming a first electrode component having the first to third electrodes;
The step of sequentially bonding the third substrate, the fourth substrate, and the fifth substrate through the insulating film, and the third substrate different from each other so as to match the shape of the first opening region. Isotropically etched, the second opening region is formed so that the surface exposed by the etching is substantially perpendicular to the third substrate, and the fourth and fourth regions separated by the second opening region are formed. 5, forming the electrode 5, etching the insulating film exposed in the second opening region, anisotropically etching the fourth substrate exposed in the second opening region, and etching The third opening region is formed so that the exposed surface extends at a predetermined angle toward the third substrate, and the sixth and seventh electrodes separated by the third opening region are formed. And the fourth to the eighth electric powers. A second electrode part forming step of forming a second electrode part having,
An electrode component bonding step of bonding the first electrode component and the second electrode component;
And a cutting step of cutting the bonded first electrode component and the second electrode component so that the length of the beam passage hole is a predetermined length. Production method. An electron gun,
An electron beam apparatus comprising: the deflector according to claim 1, which deflects an electron beam emitted from the electron gun.

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