JP3793179B2 - Nitride film quality improving method and semiconductor device manufacturing method - Google Patents

Nitride film quality improving method and semiconductor device manufacturing method Download PDF

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JP3793179B2
JP3793179B2 JP2003168349A JP2003168349A JP3793179B2 JP 3793179 B2 JP3793179 B2 JP 3793179B2 JP 2003168349 A JP2003168349 A JP 2003168349A JP 2003168349 A JP2003168349 A JP 2003168349A JP 3793179 B2 JP3793179 B2 JP 3793179B2
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nitride film
film
chlorine
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JP2005005537A (en
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岳志 星
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Toshiba Corp
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
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    • H01—ELECTRIC ELEMENTS
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
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Description

【０００１】
【発明が属する技術分野】
本発明は、半導体装置等に用いられる窒化膜の膜質改善方法及びその窒化膜を用いた半導体装置の製造方法に関する。
【０００２】
【従来の技術】
従来、ＳｉＨ２Ｃｌ２、ＳｉＣｌ４、Ｓｉ２Ｃｌ６のような塩素含有Ｓｉ原料ガスとＮＨ３ガスとを用いたＬＰＣＶＤ（Low Pressure Chemical Vapor Deposition）法により窒化膜を成膜していた。このＬＰＣＶＤ法では、６５０℃〜８００℃の成膜温度が一般的に用いられていた。
【０００３】
【発明が解決しようとする課題】
しかしながら、熱履歴（Thermal Budget）を低減するために、上記成膜温度を６００℃以下に低温化した場合、窒化膜中に不純物として塩素が多く残留してしまい、窒化膜の膜質が劣化してしまうという問題があった。
さらに、かかる窒化膜を半導体装置に適用した場合、窒化膜中に残留する塩素が他の素子に拡散してしまい、半導体装置の信頼性が低下する可能性があった。例えば、ゲート電極側壁のサイドウォールを窒化膜により形成する場合には、窒化膜の不純物がゲート電極に拡散してしまい、ゲート電極中の不純物濃度が変化してしまうという問題があった。
【０００４】
本発明は、上記従来の課題を解決するためになされたもので、成膜温度を増加させることなく、窒化膜中の塩素含有量を低減することを目的とする。
【０００５】
【課題を解決するための手段】
この発明に係る窒化膜の膜質改善方法は、基板上に、塩素含有Ｓｉ原料ガスとＮＨ３ガスを用いてＬＰＣＶＤ法により窒化膜を形成する工程と、前記窒化膜を水素ラジカル又は水素イオンに曝し、前記窒化膜内の塩素を前記窒化膜内から除去する工程とを含み、前記窒化膜を形成する工程は、６００℃以下の温度で行なうことを特徴とするものである。
【０００６】
この発明に係る膜質改善方法において、前記窒化膜内の塩素を前記窒化膜内から除去する工程は、プラズマにより前記水素ラジカル又は水素イオンを発生させる工程を含むことが好適である。
【０００７】
この発明に係る膜質改善方法において、前記窒化膜を形成する工程と、前記窒化膜内の塩素を前記窒化膜内から除去する工程とを同一の製造装置内で連続して行うことが好適である。
【０００８】
この発明に係る半導体装置の製造方法は、基板上に、半導体要素を形成する工程と、前記半導体要素上に、塩素含有Ｓｉ原料ガスとＮＨ３ガスを用いてＬＰＣＶＤ法により窒化膜を形成する工程と、前記窒化膜を水素ラジカル又は水素イオンに曝し、前記窒化膜内の塩素を前記窒化膜内から除去する工程とを含み、前記窒化膜を形成する工程は、６００℃以下の温度で行なうことを特徴とするものである。
【０００９】
この発明に係る製造方法において、前記窒化膜内の塩素を前記窒化膜内から除去する工程は、プラズマにより前記水素ラジカル又は水素イオンを発生させる工程を含むことが好適である。
【００１０】
この発明に係る製造方法において、前記窒化膜を形成する工程と、前記窒化膜内の塩素を前記窒化膜内から除去する工程とを同一の製造装置内で連続して行うことが好適である。
【００１１】
この発明の係る製造方法において、前記半導体要素はゲート電極であり、
前記窒化膜を水素ラジカル又は水素イオンに曝した後、前記窒化膜をエッチングすることにより前記ゲート電極の側壁にサイドウォールを形成する工程を更に含むことが好適である。
この発明に係る膜質改善方法又は製造法において、前記窒化膜を形成する工程は、６００℃以下の温度で行なうことが好適である。
【００１２】
【発明の実施の形態】
以下、図面を参照して本発明の実施の形態について説明する。図中、同一または相当する部分には同一の符号を付してその説明を簡略化ないし省略することがある。
【００１３】
実施の形態１．
図１は、本発明の実施の形態１による窒化膜の膜質改善方法を説明するための工程断面図である。
先ず、図１（ａ）に示すように、基板１１としてのシリコン基板上に、Ｓｉ２Ｃｌ６のような塩素含有ガスを用いて６００℃以下の成膜温度でＬＰＣＶＤ法により窒化膜１２を形成する。
ここで、窒化膜１２の成膜条件は、例えば、Ｓｉ２Ｃｌ６流量：１０〜５０ｓｃｃｍ；ＮＨ３流量：３００〜１０００ｓｃｃｍ；圧力：１．３３×１０２Ｐａ（１Ｔｏｒｒ）；温度：４５０℃である。また、窒化膜１２の形成膜厚は、以下に述べる水素ラジカル１４の導入を考慮すると、例えば、１ｎｍ〜１００ｎｍが好適であり、１ｎｍ〜５０ｎｍがより好適である。このように、塩素含有ガスを用い、６００℃以下の低温で成膜された窒化膜１２中には、不純物としての塩素１３が多く含まれる。
【００１４】
次に、図１（ｂ）に示すように、水素ラジカル又は水素イオン（以下「水素ラジカル」という。）１４を含むプラズマを発生させ、このプラズマ中に窒化膜１２を曝す。これにより、窒化膜１２中に水素ラジカル１４が導入され、導入された水素ラジカル１４は塩素１３と結合して、塩化水素１５を生成する。この生成した塩化水素１５は窒化膜１２から離脱する。
ここで、処理条件は、例えば、Ｈ２流量；５〜２０ｓｃｃｍ；ＲＦ電力：１ｋｗ；温度：４００℃である。
また、本処理を行う時間は、窒化膜１２中の塩素１３の減少量に応じて適宜決定すればよく、例えば、１０ｍｉｎである。この場合、窒化膜１２中の塩素１３が３０％減少することを本発明者は確認した。
また、本処理の温度は、上記４００℃に限らず、窒化膜１２の成膜温度以下であればよい。
【００１５】
以上説明したように、本実施の形態１では、塩素含有ガスを用いて６００℃以下の温度でＬＰＣＶＤ法により窒化膜１２を形成した後、窒化膜１２内に水素ラジカル１４を導入した。窒化膜１２内に導入された水素ラジカル１４と、窒化膜１２中の塩素１３とを結合させて除去することにより、窒化膜１２中の塩素１３を減少させることができ、窒化膜１２の膜質を改善することができる。
また、窒化膜１２の成膜と、窒化膜１２への水素ラジカル１４の導入とを、同一の製造装置（ＬＰＣＶＤ装置）で行うことにより、スループットを向上させることができる。さらに、窒化膜１２の成膜温度と、水素ラジカル１４の生成・導入温度とを同一温度にすることにより、スループットを更に向上させることができる。
【００１６】
なお、本実施の形態１では、プラズマを発生させることにより水素ラジカル１４を生成したが、熱的方法や触媒を用いて水素ラジカルを生成させてもよい（後述する実施の形態２についても同様）。但し、熱的方法を用いる場合には、窒化膜の成膜温度以下にする必要がある。
また、塩素含有のＳｉ原料ガスとしては、上記Ｓｉ２Ｃｌ６以外に、ＳｉＨ２Ｃｌ２、ＳｉＣｌ４を用いることができる。
【００１７】
実施の形態２．
図２は、本発明の実施の形態２による半導体装置の製造方法を説明するための工程断面図である。
本実施の形態２は、前述した実施の形態１の膜質改善方法を、半導体装置の製造方法に適用した一例である。
【００１８】
先ず、図２（ａ）に示すように、基板２１としてのシリコン基板上に、熱酸化法を用いてゲート絶縁膜２２としてのゲート酸化膜を形成する。次に、ゲート絶縁膜２２上にポリシリコン膜を形成し、該ポリシリコン膜をパターニングすることにより、ポリシリコン膜からなるゲート電極（半導体要素）２３を形成する。なお、ゲート電極２３は、ポリシリコン膜とシリサイド膜との積層構造のように、その構造は任意であってもよい。
【００１９】
次に、図２（ｂ）に示すように、ゲート電極２３上に、Ｓｉ２Ｃｌ６およびＮＨ３を用いて成膜温度４５０℃でＬＰＣＶＤ法により窒化膜２４を形成する。窒化膜２４の処理条件及び膜厚は、前述した実施の形態１と同様であるので、説明を省略する。このように、塩素含有ガスを用い、６００℃以下の低温で成膜された窒化膜２４中には、不純物としての塩素２５が多く含まれる。
【００２０】
次に、図２（ｃ）に示すように、水素ラジカル２６を含むプラズマを発生させ、このプラズマ中に窒化膜２４を曝す。これにより、窒化膜２４中に水素ラジカル２６が導入され、導入された水素ラジカル２６は塩素２５と結合して、塩化水素２７を生成する。この生成した塩化水素２７は窒化膜２４から離脱する。
本処理の処理条件は、前述した実施の形態１と同様であるので、説明を省略する。
【００２１】
さらに、図２（ｄ）に示すように、窒化膜２４をドライエッチング等の異方性エッチングすることにより、ゲート電極２３の側壁に窒化膜からなるサイドウォール２８を形成する。
【００２２】
以上説明したように、本実施の形態２では、ゲート電極２３を覆うように、塩素含有ガスを用いて６００℃以下の温度でＬＰＣＶＤ法により窒化膜２４を形成した後、窒化膜２４内に水素ラジカル２６を導入した。窒化膜２４内に導入された水素ラジカル２６と、窒化膜２４中の塩素２５を結合させて除去することにより、窒化膜２４中の塩素２５を減少させることができ、窒化膜２４の膜質を改善することができる。
さらに、窒化膜２４をエッチングすることにより、ゲート電極２３の側壁を覆うサイドウォール２８を形成した。膜質が改善された窒化膜からなるサイドウォール２８は塩素濃度が低いため、後工程で熱が加わった場合でも、サイドウォール２８からゲート電極２３に不純物が拡散しない。従って、膜質が改善された窒化膜を半導体装置に適用することにより、半導体装置の信頼性を向上させることができる。
【００２３】
なお、本実施の形態２では、半導体要素としてのゲート電極２３上に窒化膜２４を形成する場合について説明したが、これに限らず、例えば、窒化膜をライナーとして形成する場合についても適用できる。
【００２４】
【発明の効果】
本発明によれば、成膜温度を増加させることなく、窒化膜中の塩素含有量を低減することができる。
【図面の簡単な説明】
【図１】 本発明の実施の形態１による窒化膜の膜質改善方法を説明するための工程断面図である。
【図２】 本発明の実施の形態２による半導体装置の製造方法を説明するための工程断面図である。
【符号の説明】
１１，２１ 基板（シリコン基板）
１２，２４ 窒化膜
１３，２５ 塩素
１４，２６ 水素ラジカル
１５，２７ 塩化水素
２２ ゲート絶縁膜（ゲート酸化膜）
２３ ゲート電極
２８ サイドウォール[0001]
[Technical field to which the invention belongs]
The present invention relates to a method for improving the quality of a nitride film used in a semiconductor device or the like and a method for manufacturing a semiconductor device using the nitride film.
[0002]
[Prior art]
Conventionally, a nitride film has been formed by LPCVD (Low Pressure Chemical Vapor Deposition) method using a chlorine-containing Si source gas such as SiH 2 Cl 2 , SiCl 4 , and Si 2 Cl 6 and NH 3 gas. In this LPCVD method, a film forming temperature of 650 ° C. to 800 ° C. is generally used.
[0003]
[Problems to be solved by the invention]
However, when the film formation temperature is lowered to 600 ° C. or lower in order to reduce the thermal history, a large amount of chlorine remains as an impurity in the nitride film, and the film quality of the nitride film deteriorates. There was a problem that.
Furthermore, when such a nitride film is applied to a semiconductor device, chlorine remaining in the nitride film diffuses to other elements, which may reduce the reliability of the semiconductor device. For example, when the sidewall of the gate electrode side wall is formed of a nitride film, there is a problem in that the impurity of the nitride film diffuses into the gate electrode and the impurity concentration in the gate electrode changes.
[0004]
The present invention has been made to solve the above-described conventional problems, and an object thereof is to reduce the chlorine content in a nitride film without increasing the film formation temperature.
[0005]
[Means for Solving the Problems]
Quality improving method of the nitride film according to the present invention, on a substrate, forming a nitride film by the LPCVD method using a chlorine-containing Si source gas and NH 3 gas, exposing the nitride layer to hydrogen radicals or hydrogen ions chlorine only contains a step of removing from said nitride film in the nitride film, the step of forming the nitride film is characterized in that performed at 600 ° C. or lower.
[0006]
In the film quality improving method according to the present invention, it is preferable that the step of removing chlorine in the nitride film from the nitride film includes a step of generating the hydrogen radicals or hydrogen ions by plasma.
[0007]
In the film quality improving method according to the present invention, it is preferable that the step of forming the nitride film and the step of removing chlorine in the nitride film from the nitride film are continuously performed in the same manufacturing apparatus. .
[0008]
The method of manufacturing a semiconductor device according to the present invention includes a step of forming a semiconductor element on a substrate, and a step of forming a nitride film on the semiconductor element by LPCVD using a chlorine-containing Si source gas and NH 3 gas. And a step of exposing the nitride film to hydrogen radicals or hydrogen ions and removing chlorine in the nitride film from the nitride film, and the step of forming the nitride film is performed at a temperature of 600 ° C. or lower. It is characterized by.
[0009]
In the manufacturing method according to the present invention, it is preferable that the step of removing chlorine in the nitride film from the nitride film includes a step of generating the hydrogen radicals or hydrogen ions by plasma.
[0010]
In the manufacturing method according to the present invention, it is preferable that the step of forming the nitride film and the step of removing chlorine in the nitride film from the nitride film are continuously performed in the same manufacturing apparatus.
[0011]
In the manufacturing method according to the present invention, the semiconductor element is a gate electrode,
After 曝 the nitride film into hydrogen radicals or hydrogen ions, it is preferable that further comprising the step of forming a sidewall on a sidewall of the gate electrode by etching the nitride film.
In the film quality improving method or manufacturing method according to the present invention, the step of forming the nitride film is preferably performed at a temperature of 600 ° C. or lower.
[0012]
DETAILED DESCRIPTION OF THE INVENTION
Embodiments of the present invention will be described below with reference to the drawings. In the drawings, the same or corresponding parts are denoted by the same reference numerals, and the description thereof may be simplified or omitted.
[0013]
Embodiment 1 FIG.
FIG. 1 is a process cross-sectional view for explaining a film quality improvement method for a nitride film according to Embodiment 1 of the present invention.
First, as shown in FIG. 1A, a nitride film 12 is formed on a silicon substrate as a substrate 11 by LPCVD using a chlorine-containing gas such as Si 2 Cl 6 at a film forming temperature of 600 ° C. or lower. To do.
Here, conditions for forming the nitride film 12 is, for example, Si 2 Cl 6 flow rate: 10~50sccm; NH 3 flow rate: 300～1000Sccm; pressure: 1.33 × 10 2 Pa (1Torr ); Temperature: at 450 ° C. is there. Further, the film thickness of the nitride film 12 is preferably, for example, 1 nm to 100 nm, and more preferably 1 nm to 50 nm in consideration of introduction of the hydrogen radical 14 described below. Thus, the nitride film 12 formed at a low temperature of 600 ° C. or less using a chlorine-containing gas contains a large amount of chlorine 13 as an impurity.
[0014]
Next, as shown in FIG. 1B, plasma containing hydrogen radicals or hydrogen ions (hereinafter referred to as “hydrogen radicals”) 14 is generated, and the nitride film 12 is exposed to the plasma. As a result, hydrogen radicals 14 are introduced into the nitride film 12, and the introduced hydrogen radicals 14 are combined with chlorine 13 to generate hydrogen chloride 15. The generated hydrogen chloride 15 is detached from the nitride film 12.
Here, the processing conditions are, for example, H 2 flow rate; 5 to 20 sccm; RF power: 1 kW; temperature: 400 ° C.
In addition, the time for performing this process may be appropriately determined according to the amount of decrease of chlorine 13 in the nitride film 12, and is, for example, 10 min. In this case, the present inventor confirmed that chlorine 13 in the nitride film 12 is reduced by 30%.
In addition, the temperature of this process is not limited to the above-described 400 ° C., and may be any temperature below the deposition temperature of the nitride film 12.
[0015]
As described above, in the first embodiment, after the nitride film 12 is formed by the LPCVD method using a chlorine-containing gas at a temperature of 600 ° C. or less, the hydrogen radicals 14 are introduced into the nitride film 12. By combining and removing the hydrogen radicals 14 introduced into the nitride film 12 and the chlorine 13 in the nitride film 12, the chlorine 13 in the nitride film 12 can be reduced, and the film quality of the nitride film 12 can be reduced. Can be improved.
Further, the throughput can be improved by forming the nitride film 12 and introducing the hydrogen radicals 14 into the nitride film 12 with the same manufacturing apparatus (LPCVD apparatus). Furthermore, the throughput can be further improved by setting the deposition temperature of the nitride film 12 and the generation / introduction temperature of the hydrogen radical 14 to the same temperature.
[0016]
In Embodiment 1, hydrogen radicals 14 are generated by generating plasma. However, hydrogen radicals may be generated using a thermal method or a catalyst (the same applies to Embodiment 2 described later). . However, when a thermal method is used, it is necessary to set the temperature to be equal to or lower than the nitride film formation temperature.
In addition to Si 2 Cl 6 , SiH 2 Cl 2 and SiCl 4 can be used as the chlorine-containing Si source gas.
[0017]
Embodiment 2. FIG.
FIG. 2 is a process sectional view for explaining the method for manufacturing a semiconductor device according to the second embodiment of the present invention.
The second embodiment is an example in which the film quality improvement method of the first embodiment described above is applied to a method for manufacturing a semiconductor device.
[0018]
First, as shown in FIG. 2A, a gate oxide film as a gate insulating film 22 is formed on a silicon substrate as a substrate 21 by using a thermal oxidation method. Next, a polysilicon film is formed on the gate insulating film 22, and the polysilicon film is patterned to form a gate electrode (semiconductor element) 23 made of the polysilicon film. The gate electrode 23 may have an arbitrary structure, such as a stacked structure of a polysilicon film and a silicide film.
[0019]
Next, as shown in FIG. 2B, a nitride film 24 is formed on the gate electrode 23 by LPCVD using Si 2 Cl 6 and NH 3 at a film formation temperature of 450 ° C. Since the processing conditions and film thickness of the nitride film 24 are the same as those in the first embodiment described above, description thereof will be omitted. Thus, the nitride film 24 formed at a low temperature of 600 ° C. or less using a chlorine-containing gas contains a large amount of chlorine 25 as an impurity.
[0020]
Next, as shown in FIG. 2C, a plasma containing hydrogen radicals 26 is generated, and the nitride film 24 is exposed to this plasma. Thereby, hydrogen radicals 26 are introduced into the nitride film 24, and the introduced hydrogen radicals 26 are combined with chlorine 25 to generate hydrogen chloride 27. The generated hydrogen chloride 27 is detached from the nitride film 24.
Since the processing conditions of this processing are the same as those in the first embodiment, the description thereof is omitted.
[0021]
Further, as shown in FIG. 2D, the nitride film 24 is anisotropically etched such as dry etching to form a sidewall 28 made of a nitride film on the sidewall of the gate electrode 23.
[0022]
As described above, in the second embodiment, a nitride film 24 is formed by LPCVD using a chlorine-containing gas at a temperature of 600 ° C. or less so as to cover the gate electrode 23, and then the hydrogen in the nitride film 24 is formed. Radical 26 was introduced. By combining and removing the hydrogen radicals 26 introduced into the nitride film 24 and the chlorine 25 in the nitride film 24, the chlorine 25 in the nitride film 24 can be reduced, and the film quality of the nitride film 24 is improved. can do.
Further, by etching the nitride film 24, a sidewall 28 covering the side wall of the gate electrode 23 was formed. Since the side wall 28 made of a nitride film with improved film quality has a low chlorine concentration, impurities are not diffused from the side wall 28 to the gate electrode 23 even when heat is applied in a later step. Therefore, the reliability of the semiconductor device can be improved by applying the nitride film with improved film quality to the semiconductor device.
[0023]
In the second embodiment, the case where the nitride film 24 is formed on the gate electrode 23 as a semiconductor element has been described. However, the present invention is not limited to this. For example, the present invention can also be applied to the case where a nitride film is formed as a liner.
[0024]
【The invention's effect】
According to the present invention, the chlorine content in the nitride film can be reduced without increasing the film formation temperature.
[Brief description of the drawings]
FIG. 1 is a process cross-sectional view for explaining a nitride film quality improvement method according to a first embodiment of the present invention.
FIG. 2 is a process sectional view for explaining the method for manufacturing the semiconductor device according to the second embodiment of the present invention;
[Explanation of symbols]
11, 21 Substrate (silicon substrate)
12, 24 Nitride films 13, 25 Chlorine 14, 26 Hydrogen radicals 15, 27 Hydrogen chloride 22 Gate insulating film (gate oxide film)
23 Gate electrode 28 Side wall

Claims (8)

基板上に、塩素含有Ｓｉ原料ガスとＮＨ３ガスを用いてＬＰＣＶＤ法により窒化膜を形成する工程と、
前記窒化膜を水素ラジカル又は水素イオンに曝し、前記窒化膜内の塩素を前記窒化膜内から除去する工程とを含み、
前記窒化膜を形成する工程は、６００℃以下の温度で行なうことを特徴とする窒化膜の膜質改善方法。Forming a nitride film on the substrate by LPCVD using chlorine-containing Si source gas and NH 3 gas;
Exposing the nitride film to hydrogen radicals or hydrogen ions, and removing chlorine in the nitride film from the nitride film ,
The method for improving the quality of a nitride film, wherein the step of forming the nitride film is performed at a temperature of 600 ° C. or lower . 請求項１に記載の膜質改善方法において、
前記窒化膜内の塩素を前記窒化膜内から除去する工程は、プラズマにより前記水素ラジカル又は水素イオンを発生させる工程を含むことを特徴とする窒化膜の膜質改善方法。In the film quality improvement method according to claim 1,
The method for improving the quality of a nitride film, wherein the step of removing chlorine in the nitride film from the nitride film includes a step of generating the hydrogen radicals or hydrogen ions by plasma. 請求項１又は２に記載の膜質改善方法において、
前記窒化膜を形成する工程と、前記窒化膜内の塩素を前記窒化膜内から除去する工程とを同一の製造装置内で連続して行うことを特徴とする窒化膜の膜質改善方法。In the film quality improvement method according to claim 1 or 2,
A method of improving a film quality of a nitride film, wherein the step of forming the nitride film and the step of removing chlorine in the nitride film from the nitride film are continuously performed in the same manufacturing apparatus. 基板上に、半導体要素を形成する工程と、
前記半導体要素上に、塩素含有Ｓｉ原料ガスとＮＨ３ガスを用いてＬＰＣＶＤ法により窒化膜を形成する工程と、
前記窒化膜を水素ラジカル又は水素イオンに曝し、前記窒化膜内の塩素を前記窒化膜内から除去する工程とを含み、
前記窒化膜を形成する工程は、６００℃以下の温度で行なうことを特徴とする半導体装置の製造方法。Forming a semiconductor element on a substrate;
Forming a nitride film on the semiconductor element by LPCVD using chlorine-containing Si source gas and NH 3 gas;
Exposing the nitride film to hydrogen radicals or hydrogen ions, and removing chlorine in the nitride film from the nitride film ,
The method of manufacturing a semiconductor device, wherein the step of forming the nitride film is performed at a temperature of 600 ° C. or lower . 請求項４に記載の製造方法において、
前記窒化膜内の塩素を前記窒化膜内から除去する工程は、プラズマにより前記水素ラジカル又は水素イオンを発生させる工程を含むことを特徴とする半導体装置の製造方法。In the manufacturing method of Claim 4 ,
The method of removing a chlorine in the nitride film from the nitride film includes a step of generating the hydrogen radicals or hydrogen ions by plasma. 請求項４又は５に記載の製造方法において、
前記窒化膜を形成する工程と、前記窒化膜内の塩素を前記窒化膜内から除去する工程とを同一の製造装置内で連続して行うことを特徴とする半導体装置の製造方法。In the manufacturing method of Claim 4 or 5 ,
A method of manufacturing a semiconductor device, wherein the step of forming the nitride film and the step of removing chlorine in the nitride film from the nitride film are continuously performed in the same manufacturing apparatus. 請求項４から６の何れかに記載の製造方法において、
前記半導体要素はゲート電極であり、
前記窒化膜を水素ラジカル又は水素イオンに曝した後、前記窒化膜をエッチングすることにより前記ゲート電極の側壁にサイドウォールを形成する工程を更に含むことを特徴とする半導体装置の製造方法。In the manufacturing method in any one of Claim 4 to 6 ,
The semiconductor element is a gate electrode;
A method of manufacturing a semiconductor device, further comprising: forming a sidewall on the sidewall of the gate electrode by etching the nitride film after exposing the nitride film to hydrogen radicals or hydrogen ions. 請求項４に記載の製造方法において、
前記窒化膜は、ライナー膜として形成されることを特徴とする半導体装置の製造方法。In the manufacturing method of Claim 4 ,
The method of manufacturing a semiconductor device, wherein the nitride film is formed as a liner film.
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