JP3771931B1 - Optical semiconductor device package and optical semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a package for an optical semiconductor element capable of sufficiently ensuring heat dissipation from a semiconductor laser element, simplifying the package configuration and effectively reducing the manufacturing cost, and an optical semiconductor device using the same.
In an optical semiconductor device 30 formed by mounting a semiconductor laser element 16 on an optical semiconductor element package 20, the optical semiconductor element package 20 is formed from an outer peripheral side surface of a metal plate formed in a disc shape. An inner surface 21c on the center side of the notch 21 is formed from a metal base 22 provided with a notch 21 toward the center of the metal plate and a lead body 25 attached to the inner surface of the notch 21. In addition, the semiconductor laser element 16 is mounted with the optical axis position aligned with the center of the metal base 22, and the semiconductor laser element 16 and the lead body 24 are electrically connected.
[Selection] Figure 6

Description

  The present invention relates to an optical semiconductor element package on which a semiconductor laser element is mounted, and an optical semiconductor device using the optical semiconductor element package.

  In an optical disk device or an optical communication device, an optical semiconductor device equipped with a semiconductor laser element is used as a laser light source. In this optical semiconductor device, a semiconductor laser element is mounted on a stem to which a signal lead pin and a ground lead pin are attached, and a cap having a light transmission window is sealed to the stem to seal the semiconductor laser element. Configured. The stem is provided with a heat sink formed in a block shape, and the semiconductor laser element is bonded to the side surface of the heat sink to dissipate heat.

If the amount of heat generated by the semiconductor laser element is not so large, it is possible to use a stem formed by drawing a metal plate into a cap shape and cut the upper surface of the cap to make the mounting part of the semiconductor laser element. is there. However, when a semiconductor laser element having a large calorific value is mounted, a thick stem is formed, or a heat sink for joining the semiconductor laser element is formed in a large size so that heat is effectively dissipated from the semiconductor laser element. Must do so.
Japanese Utility Model Publication No. 62-8655 JP 2004-349320 A

  However, in order to form a block-shaped heat sink integrally with the base of the stem by pressing the metal material, it is necessary to press several times, and there is a problem that the manufacturing cost of the stem is increased. In addition, when a block heat sink formed separately from the stem is brazed to the base of the stem to form a stem with a heat sink, there is still a problem that the manufacturing cost is high.

FIG. 8 shows an example in which the stem manufacturing process is simplified to reduce the stem manufacturing cost, and the stem is also excellent in heat dissipation of the semiconductor laser device. This stem 10 has a heat sink part 11 having a semicircular planar shape formed on a stem 10 having a circular outer shape, a ring part 12 is provided opposite to the heat sink part 11, and the ring part 12 and the heat sink part 11 Is provided with an insertion hole 12a through which the lead pin is inserted. In the stem 10, as shown in FIG. 8, the semiconductor laser element 16 is mounted on the inner surface of the heat sink portion 11 and mounted, and the lead pins 14 a and 14 b inserted through the insertion holes 12 a are sealed with a resin 18.
In the case of the stem 10 shown in FIG. 8, the heat sink portion 11 is formed one step higher than the ring portion 12, but the outer shape of the stem 10 is formed into a circular shape by processing a metal material, Forming the ring portion 12 can greatly simplify the machining process as compared with a method of forming a heat sink in a rising shape on the stem.

In the stem 10, the semiconductor laser element 16 is bonded to the heat sink portion 11 formed to be thick, so that the heat dissipation from the semiconductor laser element 16 is also excellent.
However, in the case of the stem 10, there is a problem that a step of sealing the lead pins 14a and 14b to the insertion hole 12a with the resin 18 is necessary, and a step of sealing the lead pins is required.

  The present invention has been made to solve these problems, and can sufficiently secure heat dissipation from the semiconductor laser device, simplifying the package configuration and effectively reducing the manufacturing cost. It is an object of the present invention to provide an optical semiconductor device package and an optical semiconductor device using the same.

In order to achieve the above object, the present invention comprises the following arrangement.
That is, in an optical semiconductor device formed by mounting a semiconductor laser element on an optical semiconductor element package, the optical semiconductor element package is formed from the outer peripheral side surface of the metal plate formed in a disc shape to the center of the metal plate. And a lead body attached to the inner side surface of the notch portion, and the optical axis position in the center of the metal substrate is formed on the inner side surface on the center side of the notch portion. A semiconductor laser element is mounted in alignment, and the semiconductor laser element and the lead body are electrically connected.

In addition, the cut portion includes an inner side surface provided in parallel to the center line of the metal base and facing one side and the other side across the center line, and an inner side surface on which the semiconductor laser element is mounted. The planar shape is formed in a U-shape.
Further, the cut portion is characterized in that one inner side surface provided so as to sandwich the center line of the metal base is formed in a shape opened to the outside.

The lead body has a conductive layer deposited on the surface of an electrically insulating substrate, the lead body is bonded to the inner surface of the cut portion, and the conductor layer and the semiconductor laser element are electrically connected. It is characterized by being connected to.
The conductor layer and the semiconductor laser element are electrically connected by wire bonding.

  Further, an optical semiconductor element package used in the optical semiconductor device, wherein the metal substrate is provided with a cut portion from an outer peripheral side surface of the metal plate formed in a disc shape toward the center of the metal plate, and It is characterized by comprising a lead body having a conductor layer deposited on the surface of a substrate having electrical insulation attached to the inner surface of the cut portion.

  In the optical semiconductor device according to the present invention, since the package for the optical semiconductor element on which the semiconductor laser element is mounted is formed in a very simple structure, the manufacturing cost of the package for the optical semiconductor element and the optical semiconductor device is effectively reduced. Is possible. In addition, it is possible to reduce the size of the optical semiconductor device.

(First embodiment)
FIG. 1 is a perspective view showing a configuration of an optical semiconductor device 30 formed by mounting a semiconductor laser element 16 on an optical semiconductor element package 20 according to the present invention.
An optical semiconductor element package 20 used in the optical semiconductor device 30 is composed of a metal base 22 on which the semiconductor laser element 16 is mounted and a lead body 24 bonded to the metal base 22. The metal substrate 22 is formed by providing a cut portion 21 from the outer peripheral side surface of the metal plate formed in a disc shape toward the center of the metal plate, and the lead body 24 is formed on the center side of the metal substrate 22 of the cut portion 21. It is attached and joined to the inner surface.

  FIG. 2 shows a plan view of the optical semiconductor device 30. The cut portion 21 provided in the metal base 22 is parallel to the center line A of the metal base 22, the inner side faces 21 a and 21 b provided facing the one side and the other side across the center line A, and the semiconductor laser element 16. And the inner side surface 21c to which the lead body 24 is joined, the planar shape is formed as a U-shaped notch. One inner side surface 21a is provided closer to the center line A than the other inner side surface 21b, and the cut portion 21 is disposed slightly offset from the center line A on the other side. The inner side surfaces 21 a, 21 b, and 21 c are formed so that the surface direction is perpendicular to the plane of the metal substrate 22.

The inner side surface 21 c provided on the center side of the metal substrate 22 is provided at a position parallel to the center line B orthogonal to the center line A and slightly deviated from the center line B to the back side. The reason why the inner surface 21c is offset from the center line B is that the semiconductor laser device 16 is centered on the metal substrate 22 when the semiconductor laser device 16 is mounted on the inner surface 21c. This is to enable alignment.
A positioning groove 26a for positioning and mounting the optical semiconductor device 30 around the axis of the metal substrate 22 when mounting the optical semiconductor device 30 at the position of the outer peripheral side surface of the metal substrate 22 intersecting the center line B, 26b is provided. Further, on the outer peripheral side surface on the side opposite to the side where the notch portion 21 is provided on the center line A, a notch portion 28 is formed by linearly notching the side surface of the metal substrate 22. The notch 28 is provided to reduce the width dimension of the metal base 22 in the center line A direction.

  The lead body 24 bonded to the metal base 22 is formed by covering the entire surface of the substrate 25 having electrical insulation formed in a narrow plate-like body with conductor layers 25a and 25b. . The lead body 24 can be formed, for example, by cutting a wide copper-clad substrate in which a copper foil is deposited on both surfaces of a resin substrate, in accordance with the width dimension and length of the lead body 24. . The insulating material used for the substrate 25 of the lead body 24 and the metal material used for the conductor layers 25a and 25b are not particularly limited, and the manufacturing method of the lead body 24 is not limited.

When joining the lead body 24 to the inner side surface 21c, the top surface of the lead body 24 is aligned with the upper surface of the metal base 22, and is slightly spaced from the other inner side surface 21b. It joins perpendicularly to the surface of the substrate 22. By attaching the end surface of the lead body 24 so as not to protrude from the upper surface of the metal substrate 22, the optical semiconductor device 30 can be reduced in size.
The lead body 24 is bonded to the side deviated from the other inner surface 21b so as not to interfere with the bonding position of the semiconductor laser element 16.
In the optical semiconductor element package 20 of the present embodiment, the length of the lead body 24 is set to be longer than the thickness of the metal base 22, and the lead body 24 has a metal tip that is bonded to the metal base 22. The base 22 extends downward from the bottom surface.

  The lead body 24 is joined to the metal substrate 22 using a conductive material such as solder or a conductive adhesive. As a result, the other conductor layer 25 b of the lead body 24 is electrically connected to the metal substrate 22. The other conductor layer 25b of the lead body 24 is used as a ground line, and one conductor layer 25a of the lead body 24 is used as a signal line.

The optical semiconductor device 30 includes a semiconductor laser element 16 mounted on an optical semiconductor element package 20 formed by bonding a lead body 24 to a metal substrate 22, and wire bonding between the semiconductor laser element 16 and the lead body 24 is performed. Formed by.
The semiconductor laser element 16 is joined to the inner surface 21 c of the cut portion 21 in parallel with the lead body 24. In the present embodiment, the mount 17 on which the semiconductor laser element 16 is mounted is bonded to the inner side surface 21c and the semiconductor laser element 16 is mounted. The mount 17 is joined by a conductive material such as solder or a conductive adhesive.

As shown in FIG. 2, the semiconductor laser element 16 is joined to the inner surface 21 c with the semiconductor laser element 16 positioned at the center of the metal base 22. The thickness of the mount 17 is set so that the semiconductor laser element 16 is positioned at the center of the metal base 22 when the mount 17 is bonded to the inner side surface 21 c and the semiconductor laser element 16 is mounted.
Of course, it is also possible to mount the semiconductor laser element 16 without using the mount 17. In this case, since the semiconductor laser element 16 is directly bonded to the inner side surface 21c of the cut portion 21, the semiconductor laser element 16 is positioned at the center of the metal base 22 when the semiconductor laser element 16 is bonded. A deviation position from the center of the inner surface 21c is set.

The reason why the semiconductor laser element 16 is positioned and mounted at the center position of the metal base 22 is that the optical semiconductor device 30 is placed on the axis when the radiation direction of the laser light emitted from the semiconductor laser element 16 is aligned in a predetermined direction. This is to prevent the position of the laser beam radiation source from being displaced at that time.
In the present embodiment, when the optical semiconductor device 30 is rotated around the axis, an arc-shaped portion is left on the outer peripheral side surface of the metal base 22 so as not to be misaligned, and the semiconductor laser element 16 is the center of the metal base 22. It is formed so as to be positioned with high accuracy.

  After the semiconductor laser element 16 is bonded to the inner side surface of the cut portion 21 of the metal base 22, the semiconductor laser element 16 and the lead body 24 are electrically connected by wire bonding. This operation is performed by inserting a bonding tool (capillary) from the opening side of the cut portion 21 in parallel with the planar direction of the metal substrate 22 and wire bonding the electrode of the semiconductor laser element 16 and the conductor layer 25a of the lead body 24. The Since the cut portion 21 is provided with the front side of the inner side surface 21c opened to the outer side surface of the metal base 22, the operation of inserting the capillary through the opening portion and wire bonding can be easily performed.

  The optical semiconductor device 30 of the present embodiment is a finished product in a state where the semiconductor laser element 16 is bonded to the metal base 22 and the semiconductor laser element 16 is exposed to the outside without being sealed with a cap. Therefore, the optical semiconductor device 30 can be formed extremely compact, and the configuration of the optical semiconductor device 30 can be greatly simplified. As a result, the manufacturing cost of the components of the optical semiconductor device 30 can be reduced, the assembly work of the optical semiconductor device 30 can be simplified, and the manufacturing cost of the optical semiconductor device 30 as a whole can be greatly reduced.

A metal base 22 which is a main component of the optical semiconductor element package 20 used in the optical semiconductor device 30 of the present embodiment is formed by cutting a metal plate into a circular outer shape and forming a cut portion 21 in the metal plate. Since it can be manufactured simply by forming, it is not necessary to process the heat sink into a block shape unlike a stem used in a conventional optical semiconductor device.
Also, the lead body 24 can be attached simply by joining to the inner side surface 21c of the cut portion 21, and there is no need to seal the lead pin with glass or with resin as in the conventional case. The lead body 24 has a very simple structure in which the conductor layers 25a and 25b are formed on both surfaces of the substrate 25, and the lead body 24 can be manufactured very easily.

  Further, since the metal base 22 itself acts as a heat sink by bonding the semiconductor laser element 16 to the metal base 22, an optical semiconductor element having sufficient heat dissipation by using a metal material having a required thickness. Can be formed as a package. The metal substrate 22 of this embodiment has an outer diameter of 5 mm and a thickness of 1 mm. The material of the metal substrate 22 is not particularly limited, but in this embodiment, iron is used as the substrate and nickel plating is applied to the surface.

When mounting the optical semiconductor device 30, an electrode connected to one conductor layer 25 a serving as a signal line and an electrode connected to the other conductor layer 25 b serving as a ground line are provided on the mounting substrate side. 25a and 25b are mounted by being electrically connected to a signal line and a ground line of the mounting board, respectively. The ground line is electrically connected through the mount 17 on which the semiconductor laser element 16 is mounted, the metal base 22 and the other conductor layer 25b.
In an optical semiconductor device, it is necessary to monitor laser light emitted from a semiconductor laser element. Since the optical semiconductor device 30 of this embodiment does not include a light receiving element for monitoring, other monitoring means such as monitoring the laser light emitted from the semiconductor laser element 16 using a half mirror is provided.

FIG. 3 shows some examples of an optical semiconductor element package 20 including a metal substrate 22 provided with a cut portion 21.
FIG. 3A shows an example in which the lead body 24 formed linearly is joined to the inner side surface 21c of the cut portion 21 in the optical semiconductor element package 20 used in the optical semiconductor device 30 described above. is there.
FIG. 3B shows a lead body 24 a formed by forming conductor layers 25 a and 25 b on both surfaces of a substrate 25 and bending the top portion 25 c into an L shape, and the inner surface of the top portion 25 c is brought into contact with the upper surface of the metal substrate 22. In this example, the metal substrate 22 is joined so as to be in contact. As a result, the lead body 24a can be reliably bonded to and supported by the metal substrate 22, and the metal substrate 22 and the conductor layer 25b can be reliably electrically connected.

FIG. 3C shows an example in which the lead body 24 b is formed in an L shape with a side surface shape, and a lower end portion 25 d bent in an L shape is brought into contact with the lower surface of the metal substrate 22 and joined to the metal substrate 22. When the lead body 24 b is joined to the metal base body 22, the upper end surface of the lead body 24 b is formed so as to be flush with the upper surface of the metal base body 22.
Signal lines electrically connected to the conductor layers 25a and 25b on the mounting substrate side when the optical semiconductor device formed using the optical semiconductor element package 20 shown in FIGS. 3B and 3C is mounted. The provision of the electrodes for grounding and the electrodes for grounding is the same as in the case of using the optical semiconductor element package 20 shown in FIG.

(Second Embodiment)
FIG. 4 is a perspective view showing a second embodiment of the optical semiconductor device. The optical semiconductor device of the present embodiment is characterized in that the shape of the cut-out portion 21 provided in the metal base 22a constituting the optical semiconductor element package 20a is different from that of the first embodiment.
FIG. 5 shows a plan view of the optical semiconductor device. In the present embodiment, the other inner side surface 21b of the cut portion 21 provided in the metal base 22a is provided in a shape in which the opening side is wide open, that is, the inner side surface 21b is inclined outward with respect to the center line A. The configuration in which the lead body 24 and the semiconductor laser element 16 are attached to the inner side surface 21c on the center side of the cut portion 21 is the same as that in the first embodiment.

In the optical semiconductor device according to the present embodiment, since the inner side surface 21b of the cut portion 21 is open to the outside, the opening area of the cut portion 21 is increased and the extension length of the extended piece portion 23 is increased. , The width dimension (length D in FIG. 5) between the open side of the cut portion 21 and the side surface opposite to the metal base 22 in the radial direction of the metal base 22 is smaller than the outer diameter of the metal base 22. Can also be shortened.
Since the metal base 22 adjusts the optical axis of the laser light emitted from the semiconductor laser element 16, the metal base 22 is circularly arranged on the outer peripheral side surface in an arrangement surrounding the semiconductor laser element 16 so that the core does not shake when the semiconductor device is rotated around the axis. It is formed so as to leave an arcuate portion. In the optical semiconductor device of the present embodiment, the arcuate portion left on the outer peripheral side surface of the metal substrate 22 is minimized to reduce the size of the metal substrate 22.

(Third embodiment)
6 and 7 are a perspective view and a plan view showing the configuration of the optical semiconductor device according to the third embodiment.
The optical semiconductor device according to the present embodiment is characterized in that two lead bodies 24 are attached to the cut portion 21 provided in the metal substrate 22b. The lead body 24 is attached to the inner side surface 21 c on the center side of the cut portion 21 so as to sandwich the semiconductor laser element 16.

In the optical semiconductor element package 20b of the present embodiment, the two lead bodies 24, 24 are joined to the inner side surface 21c of the cut portion 21, and therefore the length of the inner side surface 21c compared to the metal bases 22, 22a described above. Is formed a little longer. Further, the cut portion 21 is formed in a U shape that is symmetrically arranged with respect to the center line A of the metal base 22b.
When the two lead bodies 24 are attached to the metal substrate 22b as in the optical semiconductor device of the present embodiment, for example, one lead body 24 is used as a signal line and the other lead body 24 is used as a ground line. Can be used as

Note that the thermal resistance of the optical semiconductor device (FIG. 6) shown as the third embodiment and the conventional optical semiconductor device was analyzed. In addition, the conventional optical semiconductor device is a stem formed in a disk shape and a heat sink on which a semiconductor laser element is mounted integrally formed in a rising shape. From an iron-nickel-cobalt alloy to an iron eyelet. The lead pin is glass sealed.
As a result of analyzing the thermal resistance (θjc) when the metal substrate 22b of the optical semiconductor device of this embodiment is iron, the power consumption of the semiconductor laser element is 200 mW, and the outside air temperature is 25 ° C., 23.9 in the case of the conventional optical semiconductor device. (° C./W), which is 16.2 (° C./W) in the optical semiconductor device of this embodiment. This analysis result shows that the optical semiconductor device of this embodiment has a heat resistance of about 33% lower than that of the conventional example and is excellent in heat dissipation.

It is a perspective view which shows the structure of 1st Embodiment of an optical semiconductor device. It is a top view which shows the structure of 1st Embodiment of an optical semiconductor device. It is a perspective view which shows some structural examples of the package for optical semiconductor elements. It is a perspective view which shows the structure of 2nd Embodiment of an optical semiconductor device. It is a top view which shows the structure of 2nd Embodiment of an optical semiconductor device. It is a perspective view which shows the structure of 3rd Embodiment of an optical semiconductor device. It is a top view which shows the structure of 3rd Embodiment of an optical semiconductor device. It is a perspective view which shows the example of the stem which formed the semicircular heat sink part in the stem with a circular external shape.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Stem 11 Heat sink part 12 Ring part 14a, 14b Lead pin 16 Semiconductor laser element 20, 20a, 20b Optical semiconductor element package 21 Cut part 21a, 21b, 21c Inner side surface 22, 22a, 22b Metal base | substrate 24, 24a, 24b Lead body 25 Substrate 25a, 25b Conductor layer 30 Optical semiconductor device

Claims (6)

In an optical semiconductor device formed by mounting a semiconductor laser element on a package for an optical semiconductor element,
The package for an optical semiconductor element includes a metal base provided with a cut portion from an outer peripheral side surface of a metal plate formed in a disc shape toward a central portion of the metal plate, and leads attached to the inner side surface of the cut portion Formed from the body,
A semiconductor laser element is mounted on the inner side surface on the center side of the cut portion with the optical axis position aligned with the center of the metal base, and the semiconductor laser element and the lead body are electrically connected. An optical semiconductor device.   The cut portion is a plane formed by an inner side surface provided parallel to the center line of the metal base and facing one side and the other side across the center line, and an inner side surface on which the semiconductor laser element is mounted. 2. The optical semiconductor device according to claim 1, wherein the optical semiconductor device is U-shaped.   2. The optical semiconductor device according to claim 1, wherein the cut portion is formed such that one inner side surface provided in an arrangement sandwiching the center line of the metal base is open to the outside.   The lead body is formed by depositing a conductor layer on the surface of an electrically insulating substrate, the lead body is joined to the inner surface of the cut portion, and the conductor layer and the semiconductor laser element are electrically connected. 2. The optical semiconductor device according to claim 1, wherein the optical semiconductor device is formed.   5. The optical semiconductor device according to claim 4, wherein the conductor layer and the semiconductor laser element are electrically connected by wire bonding. An optical semiconductor element package used in the optical semiconductor device according to claim 1,
A metal base provided with a cut portion from the outer peripheral side surface of the metal plate formed in a disc shape toward the center of the metal plate;
An optical semiconductor device package comprising: a lead body having a conductor layer deposited on the surface of a substrate having electrical insulation attached to and attached to the inner surface of the cut portion.

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