JP3768162B2 - Semiconductor processing equipment and wafer sensor module - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to an apparatus for processing a semiconductor in an atmosphere isolated from the atmosphere, and more particularly to a semiconductor processing apparatus suitable for plasma processing of a semiconductor wafer.
[0002]
[Prior art]
In plasma processing semiconductor manufacturing equipment such as plasma etching equipment and plasma chemical vapor deposition equipment, current, voltage, wafer temperature, and more at multiple points distributed on the surface of the wafer to be processed during the semiconductor processing process. Therefore, in order to manufacture semiconductors with high accuracy, high efficiency and stability, these values can be measured accurately at the start of processing. Is an important factor.
[0003]
For this reason, various sensor probes have been proposed and put to practical use. However, as one type, the shape of a wafer used by being installed at a place where a processing target wafer is placed in a semiconductor processing apparatus is used. There are sensor modules, which are called by several names. Here, they are called “wafer sensor modules”.
[0004]
By the way, as an example of a conventional wafer sensor module, there is a “diagnostic wafer” disclosed in Japanese Patent Laid-Open No. 8-213374, which is basically formed of an anodized aluminum disk and has a main portion. It consists of an ion current probe and an ion energy analyzer placed on the wafer.
[0005]
[Problems to be solved by the invention]
In the above prior art, consideration is not given to the installation and removal of the wafer sensor module from the semiconductor processing apparatus, and there has been a problem in throughput reduction due to change and setting of processing contents by the semiconductor processing apparatus.
[0006]
A wafer sensor module according to the prior art, for example, the “diagnostic wafer” described above is electrically connected in the semiconductor manufacturing apparatus and further connected to the outside. Is required.
[0007]
Here, the inside of the semiconductor manufacturing apparatus is isolated from the atmosphere. Therefore, when the wafer sensor module is used, it is necessary to take out an electrical signal from the apparatus. Since electrical wiring (conducting wire) is used for this, it is necessary to take out the wiring from a place isolated from the atmosphere.
[0008]
By the way, in general, electrical wiring is taken out from a place isolated from the atmosphere.ofMethod, i.e., current introduction terminal (or through terminal).IfMounting the parts in the through holes provided in the vacuum partition and connecting the electrical wiring to the vacuum side and the atmosphere side terminal portions of the current introduction terminals, and the electrical wiring passes through the through holes of the vacuum partition. A method of sealing the periphery of the portion with an elastomer (silicon rubber sealant or the like) has been used.
[0009]
As a result, even if any of these methods is adopted, in the prior art, it is indispensable to replace and re-seal the electrical wiring when installing and removing the wafer sensor module. It is necessary to temporarily stop the process chamber and open the processing chamber, and thus the throughput is reduced.
[0010]
Here, measurement by this wafer sensor module starts using semiconductor manufacturing equipmentYouHowever, if necessary, for example, every time the number of processed semiconductor wafers reaches a predetermined value, it must be performed at a predetermined frequency. Therefore, in the prior art, as described above, the throughput decreases. It will be brought.
[0011]
An object of the present invention is to provide a semiconductor processing apparatus and a wafer sensor module which can cope with the installation and removal of a wafer sensor module without opening the processing chamber and can always maintain a high throughput.
[0012]
[Means for Solving the Problems]
  The purpose is to treat the process chamber isolated from the atmosphere.Semiconductor wafer held on the mounting table inIn a semiconductor processing apparatus for processingWhen the semiconductor wafer is processed in the processing chamber, a light emitting element that emits light by detecting at least one of a current flowing through the semiconductor wafer, a voltage appearing in the semiconductor wafer, and a temperature of the semiconductor wafer is provided on the lower surface as a sensor probe. When the wafer sensor module is placed on the mounting table by the semiconductor wafer transfer means, a light receiving unit that receives light emitted from the light emitting element is provided on the upper surface of the mounting table, and the light receiving unit A light guide that guides light to the outside of the semiconductor processing apparatus is provided in the mounting table, and at least one of the current, the voltage, and the temperature is detected by the light guided to the outside by the light guide.Is achieved in this way.
[0013]
  At this time,Even if the light receiving unit is arranged on the upper surface of the mounting table in accordance with the arrangement state of the light emitting elements of the wafer sensor module, the above object is achieved.
[0014]
  Another object of the present invention is to provide a semiconductor processing apparatus for processing a semiconductor wafer held on a mounting table in a processing chamber isolated from the atmosphere.InWhen the semiconductor wafer is processed in the processing chamber, a plurality of light-emitting elements that emit light in different colors by detecting each of a current flowing through the semiconductor wafer, a voltage appearing in the semiconductor wafer, and a temperature of the semiconductor wafer are provided. When a wafer sensor module provided as a sensor probe in one place on the lower surface is placed on the mounting table by the semiconductor wafer transfer means, light emission of a plurality of light emitting elements gathered in the one place Is provided on the upper surface of the mounting table, and one light guide path is provided in the mounting table for guiding light from the light receiving unit to the outside of the semiconductor processing apparatus. And at least 1 sort of the said temperature is achieved even if it detects with the light guide | induced outside by the said light guide.
[0015]
  Furthermore,An object of the present invention is to provide a semiconductor processing apparatus for processing a semiconductor wafer held on a mounting table in a processing chamber isolated from the atmosphere.InWhen the semiconductor wafer is processed in the processing chamber, a light-emitting element that emits light by detecting at least one of a current flowing through the semiconductor wafer, a voltage appearing in the semiconductor wafer, and a temperature of the semiconductor wafer is provided on the upper surface as a sensor probe. When the wafer sensor module is placed on the mounting table by the semiconductor wafer transfer means, a light receiving portion that receives light emitted from the light emitting element in the processing chamber is provided on a side wall portion of the processing chamber, This is achieved even if at least one of the current, the voltage, and the temperature is detected by the light received by the light receiving unit.
[0016]
  The above purpose isA wafer sensor module used in a semiconductor processing apparatus for processing a semiconductor wafer held on a mounting table in a processing chamber isolated from the atmosphere, wherein the wafer sensor module is processed by the semiconductor processing apparatus And the wafer sensor module is processed by the semiconductor processing apparatus by providing a light emitting element on the lower surface when mounted on the mounting table. This is also achieved by providing a light emitting element on a surface which is made of a silicon substrate having substantially the same shape as the semiconductor wafer to be formed and which is on the upper side when placed on the mounting table.
[0017]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, a semiconductor processing apparatus according to the present invention will be described in detail with reference to embodiments shown in the drawings.
FIG. 1 shows an embodiment of the present invention. In the drawing, a vacuum vessel 400 forms a processing chamber C isolated from the atmosphere necessary for plasma processing, for example, and is evacuated and evacuated. Then, after flowing an appropriate process gas, a plasma (not shown) is used in the processing chamber C using a plasma generator (not shown).NoOccurs)YouIt has become so.
[0018]
The vacuum vessel 400 is provided with a wafer stage 200 therein, and a transfer system 500 is provided at the side.
First, a bias voltage is applied to the wafer stage 200 from a bias power source (not shown), so that plasma generated in the processing chamber C is efficiently drawn toward the wafer stage 200.
[0019]
Next, the transfer system 500 includes a transfer mechanism (not shown), carries a semiconductor wafer to be processed into the processing chamber C while keeping the inside of the processing chamber C substantially isolated from the outside, The semiconductor wafer placed on the wafer stage 200 is also carried out to the outside while holding the inside of the processing chamber C in a state of being substantially isolated from the outside.
[0020]
In the embodiment of FIG. 1, reference numeral 100 denotes a wafer sensor module, which is made to have substantially the same dimensions as a semiconductor wafer to be processed and is placed on a wafer stage 200. Although not shown, the semiconductor wafer to be processed is the wafer sensor module 100.It is mounted by exchanging with.
[0021]
Next, in FIG. 1, 101 is a sensor probe, 102 is a light emitting element, and 201 is a light receiving element.
First, a plurality of sensor probes 101 are arranged in a predetermined pattern on the surface of the wafer sensor module 100 as shown in FIG. 2, and each of them has at least one of ion current, voltage distribution, and temperature. It works to measure as a measurement target.
[0022]
Next, the light emitting elements 102 are arranged on the back surface of the wafer sensor module 100 so that each of the light emitting elements 102 is combined with each of the sensor probes 101 so as to be in the same position as each sensor probe 101 when viewed from above. I'm. Each light emitting element 102 is connected to a corresponding sensor probe 101 and corresponds to a measured value such as current, voltage distribution, and temperature detected by each sensor probe 101.wavelengthIt works to generate light.
[0023]
On the other hand, in FIG. 1, reference numeral 201 denotes a light receiving unit, which is an upper surface of the wafer stage 200. When the wafer sensor module 100 is placed thereon, each light emitting element 102 is disposed at a position facing each other. For example, a lens having a predetermined size is used.
[0024]
Next, 202 is a light guide, and the light taken in by each light receiving unit 201 is respectively shown.IndependenceIt works to lead to the outside in the state. For this reason, the upper end of the vertical portion of the wafer stage 200 is connected to each light receiving unit 201.,husbandIt is made of an optical fiber having a predetermined thickness disposed in the wafer stage 200 so as to be taken out of the vacuum vessel 400 while being independent of each other.
[0025]
In FIG. 1, 300 isconversionThe device is arranged in a predetermined pattern and communicated with the light output end of each light guide path 202.Light receptionThe light guided through each light guide path 202,Outputs a predetermined voltage depending on the wavelength of lightWork.
[0026]
Next, the operation of the semiconductor processing apparatus according to one embodiment of the present invention shown in FIG. 1 will be described.
In this semiconductor processing apparatus, first, a wafer sensor module 100 is prepared in advance according to the type of semiconductor wafer to be dealt with and the type of processing to be performed on it. Here, the wafer sensor module 100 to be prepared at this time has a predetermined number and a predetermined number of sensor probes 101 corresponding to current detection, voltage detection, temperature detection and the like necessary for a semiconductor wafer to be processed. It is arranged.
[0027]
Before starting the processing of the semiconductor wafer, the wafer transfer module 500 first loads the wafer sensor module 100 into the processing chamber C and places it on the wafer stage 200. At this time, each of the light emitting elements 102 on the lower surface of the wafer sensor module 100 is positioned so as to face each light receiving unit 201 on the upper surface of the wafer stage 200.
[0028]
Here, as already described, all of the wafer sensor modules 100 are made to have substantially the same dimensions as the semiconductor wafer targeted by the wafer transfer system 500. Accordingly, loading of the wafer sensor module 100 by the wafer transfer system 500 at this time can be handled in the same manner as a semiconductor wafer, and can be accurately and easily transferred.
[0029]
In this way, preparation for measurement processing necessary for processing of the semiconductor wafer is completed without requiring work such as connection of electric wires to the sensors. From this, for example, a semiconductor wafer such as plasma processing is prepared. Start the targeted process.
[0030]
As a result, an ion current flows through the wafer sensor module 100, a voltage is generated, and the temperature changes, so that they are detected by each of the sensor probes 101, and each light emitting element 102 emits light.
[0031]
Thus, the optical signals generated from the respective light emitting elements 102 are incident on the light receiving portions 201 facing each other and transmitted to the wafer stage 200 side. And the signal by the light introduce | transduced from each light-receiving part 201 passes the inside of the light guide path 202 in the wafer stage 201, and is taken out of the vacuum vessel 400,conversionProvided for each measurement object type in the apparatus 300Light receptionLed to the department.
[0032]
So thisconversionDevice 300Measure the voltage output byAs a result, the ion current, voltage distribution, and temperature at this time can be recognized, and various data necessary for setting the required processing conditions can be obtained. Therefore, according to this embodiment, a high throughput can always be reliably maintained in the processing of the semiconductor wafer.
[0033]
Next, details of the wafer sensor module 100 will be described.
First, with respect to the arrangement of the sensor probes 101, FIG. 2 shows a case where they are arranged in a cross shape. In this case, the ion current, voltage distribution, and temperature at the position of each sensor probe 101 can be measured.
[0034]
However, the number and arrangement pattern of the sensor probes 101 may be arbitrarily set and changed as necessary. For example, a lattice pattern or a concentric pattern can be arranged. As for plasma processing, it may be considered that the plasma distribution is symmetric with respect to the central axis. In this case, it is sufficient to arrange the plasma on a radius.
[0035]
Next, the details of the sensor probe 101 will be described. Here, the sensor probe 101 including the main body of the wafer sensor module 100 is manufactured using a single crystal silicon wafer as a raw material.
Here, the reason for adopting the single crystal silicon wafer as a raw material is as follows.
[0036]
It is relatively inexpensive and supplied in large quantities for semiconductor manufacturing, and it is equivalent to the material that is actually processed in the semiconductor manufacturing process, so there is no need to pay special attention when handling it, and it is similar to the semiconductor manufacturing process. This is because various devices can be easily formed by the already established dry and wet etching processes and film forming processes, which is extremely convenient.
[0037]
First, FIG. 3 shows an embodiment in which three sensor probes 1011, a voltage sensor probe 1012, and a temperature sensor probe 1013 are formed on the upper surface of the wafer sensor module 100 as each sensor probe 101.
[0038]
First, as shown in FIG. 4, the voltage sensor probe 1012 is connected to an electrode 1014, an LED (light emitting diode) 1015 having one terminal connected to the electrode 1014, and the other terminal of the LED 1015. A reference electrode 1016 is formed. At this time, the reference electrode 1016 is provided at a predetermined distance from the electrode 1014.
[0039]
The LED 1015 is made of an aggregate of a plurality of LEDs having a known threshold voltage and different from each other, and each has different emission color characteristics. This serves to generate light of different colors depending on the potential difference between the electrode 1014 and the reference electrode 1016.
[0040]
The light generated from the LED 1015 is received on the wafer stage 200 side by the opposing light receiving unit 201, led out of the semiconductor manufacturing apparatus via the light guide path 202, and input to the conversion apparatus 300.
[0041]
Here, the conversion device 300 is a device that converts an optical signal into an electrical signal, and outputs a signal having a predetermined voltage depending on the color of the input light. Therefore, based on the correspondence between the voltage of this signal and the known threshold voltage of the LED 1015, the converter 300 can display the potential difference between the electrode 1014 and the reference electrode 1016 on a display (not shown).
[0042]
Next, FIG. 5 shows another embodiment of the voltage sensor probe 1012, which penetrates the wafer stage 200 and places contact pins 203 so as to contact the reference electrode 1016 as shown. Thus, any known potential is applied to the reference electrode 1016 from the outside via the contact pin 203. Therefore, according to this embodiment, the absolute potential of the electrode 1014 can be measured. It is.
[0043]
Next, the current sensor probe 1011 shown in FIG. 3 will be described. The reference electrode 1016, the electrode 1017, the resistor 1018, and the LED 1019 are formed as shown in FIG. Here, the reference electrode 1016 is the same as that of the voltage sensor probe shown in FIG.
[0044]
The resistor 1018 has a known resistance value, and is connected in parallel with the LED 1019 between the electrode 1017 and the reference electrode 1016. Further, the reference electrode 1016 is in contact with the contact pin 203 installed through the wafer stage 200 and is given an arbitrary potential.
[0045]
The current flowing into the electrode 1017 flows out from the reference electrode 1016 through the resistor 1018. At this time, a potential difference determined by the current value at this time and the resistance value of the resistor 1018 is generated between the terminals of the resistor 1018, and this potential difference is applied to the LED 1019.
[0046]
Here, this LED 1019 is also made of an aggregate of a plurality of LEDs having a known threshold voltage and different from each other, and each has different emission color characteristics. In this way, light of different colors is generated depending on the potential difference between the electrode 1014 and the reference electrode 1016, that is, the voltage corresponding to the current value flowing into the electrode 1017.
[0047]
The light generated from the LED 1019 is also received on the wafer stage 200 side by the opposing light receiving unit 201, led out of the semiconductor manufacturing apparatus via the light guide path 202, and input to the conversion apparatus 300. As a result, the current value flowing into the electrode 1017 can be displayed on a display (not shown) in the same manner as in the case of the voltage sensor probe described above.
[0048]
Next, the temperature sensor 1013 shown in FIG. 3 will be described. This is because the phosphor 1020 is simply embedded in a predetermined position of the wafer sensor module 100 as shown in FIG. The phosphor 1020 is a fluorescent material that generates fluorescence peculiar to the temperature at a specific temperature.
[0049]
Accordingly, by inputting the fluorescence generated from the phosphor 1020 to the conversion device 300 via the light receiving unit 201 and the light guide path 2002, the temperature at the position where the phosphor 1020 is provided is not shown. Can be displayed.
[0050]
As described above, any of the wafer sensor modules 100 described with reference to FIGS. 3 to 7 can be easily mounted on the wafer stage 200 by simply placing it on the wafer stage 200 without requiring an operation such as changing the connection of the wires. It can be seen that the wafer current, voltage, and temperature can be measured.
[0051]
Next, another embodiment of the present invention will be described. First, FIG. 8 shows a second embodiment of the present invention. In FIG. 8, reference numeral 301 denotes a light receiver, which is provided on the side wall of the vacuum vessel 400 and is a wafer. Although it functions to detect light generated from each sensor probe 101 of the sensor module 100, other configurations including the vacuum vessel 400 are the same as those in the embodiment of FIG. Is omitted.
[0052]
In this embodiment, the basic configuration of the wafer sensor probe 100 itself is the same as that of the wafer sensor module 100 in the embodiment described with reference to FIGS. 1 to 7, but in the embodiment of FIG. The light emitting elements of the probe 101 are different from each other in that they are provided on the upper side, and at this time, the individual LEDs and phosphors constituting each light emitting element all emit light in different colors. .
[0053]
Specifically, for example, the current sensor probe emits light individually in the visible red region, the voltage sensor probe emits light individually in the green region, and the temperature sensor probe emits light in the blue region. It is designed to emit light individually.
In response to this, the light receiver 301 can also individually detect the light intensity in each color region in the visible light region. At this time, as shown in FIG. Each of the sensor probes 101 is individually selected from the entire surface, and light from the sensor probes 101 can be taken in preferentially. For this purpose, a television camera may be used, and a light receiver whose field of view is limited to the size of each sensor probe 101 is used, and its light receiving axis is scanned over the entire surface of the wafer sensor probe 100. Also good.
[0054]
The light generated by each sensor probe 101 is received by the light receiving device 301., StrangeAs a result, the current, voltage, and temperature detected for each sensor probe 101 can be recognized externally. As a result, according to this embodiment, the wafer transfer system 500 also simply performs the wafer sensor. It can be seen that the current, voltage, and temperature of the semiconductor wafer can be easily measured by simply placing the module 100 on the wafer stage 200 without requiring an operation such as changing the connection of the wires.
[0055]
In the case of the embodiment of FIG. 8, since the plasma is directly irradiated on the wafer sensor module 100 on which the sensor probe 101 is installed, the light from this plasma is also incident on the light receiving device 301. End up. Therefore, in order to eliminate the influence of the plasma light, it is necessary to block the plasma light using a bandpass filter (not shown) or the like. Further, it is desirable to provide a protection means for the sensor probe 101 in the wafer sensor module 100 in order to minimize damage to the sensor probe 101 from the plasma.
[0056]
In the embodiment of FIG. 8, since it is not necessary to install a light guide such as a light receiving unit or an optical cable in the wafer stage 200, the configuration of the wafer stage is not likely to be complicated, and the degree of design freedom is high. Thus, there are advantages such as easy introduction to existing equipment.
[0057]
Next, FIG. 9 shows a third embodiment of the present invention. In this embodiment, the individual light emitting elements 102 in the embodiment shown in FIG. In accordance with this, the light receiving unit 201 is gathered in one place on the wafer stage 200 side, and the received light is guided to the conversion device 300 by a single common light guide path 202.didIs.
[0058]
Here, since at least one type of detected value of current, voltage, and temperature detected by each sensor probe 101 is converted into a light signal having a different color, it is collected by the light receiving unit 201, and is shared by one common guide. Even if it is input to the conversion device 300 via the optical path 202, it can be separated for each sensor probe 101 by a filter.
[0059]
Therefore, according to this embodiment, the wafer transfer system 500 can simply place the wafer sensor module 100 on the wafer stage 200 and can easily change the current of the semiconductor wafer without changing the connection of the electric wires. And voltage, and temperature can be measured.
[0060]
When the wafer sensor probe 100 of FIG. 9 is used, the number of light receiving portions and the number of light guides to be installed in the wafer stage 200 can be minimized, so that the degree of freedom in designing the wafer stage is high. As a result, there are advantages such as ease of introduction into an existing apparatus and reduction in system cost.
[0061]
By the way, in embodiment of this invention, although LED and fluorescent substance are used for the sensor probe 101, the structure which mechanically displaces according to at least one of an electric current, a voltage, and temperature is provided in a sensor probe, and the displacement amount is provided. The present invention can be implemented even by using a method for recognizing by optical means, and the object of the present invention can be achieved.
[0062]
【The invention's effect】
According to the present invention, the potential and potential distribution of the workpiece in the semiconductor wafer processing apparatus, the current flowing through the workpiece, and the temperature of the workpiece can be easily and easily performed without causing a decrease in throughput. Since it can be measured, the conditions necessary for the processing of the semiconductor wafer can be easily optimized in a short time.
[Brief description of the drawings]
FIG. 1 is an explanatory view showing an embodiment of a semiconductor wafer processing apparatus according to the present invention.
FIG. 2 is a plan view of a wafer sensor module according to an embodiment of the present invention.
FIG. 3 is an enlarged cross-sectional view of a sensor probe portion of a wafer sensor module according to an embodiment of the present invention.
FIG. 4 is an enlarged cross-sectional view of a voltage sensor probe in one embodiment of the present invention.
FIG. 5 is an enlarged cross-sectional view of another example of a voltage sensor probe in one embodiment of the present invention.
FIG. 6 is an enlarged cross-sectional view of a current sensor probe in one embodiment of the present invention.
FIG. 7 is an enlarged cross-sectional view of a temperature sensor probe in one embodiment of the present invention.
FIG. 8 is an explanatory view showing a second embodiment of a semiconductor wafer processing apparatus according to the present invention.
FIG. 9 is an explanatory view showing a third embodiment of a semiconductor wafer processing apparatus according to the present invention.
[Explanation of symbols]
100 Wafer sensor module
101 Sensor probe
102 Light Emitting Element
200 Wafer stage
201 Light receiver
202 Light guide
300 Converter
400 vacuum vessel
500 Wafer transfer system
C treatment room

Claims (6)

In a semiconductor processing apparatus for processing a semiconductor wafer held on a mounting table in a processing chamber isolated from the atmosphere,
When the semiconductor wafer is processed in the processing chamber, a light emitting element that emits light by detecting at least one of a current flowing through the semiconductor wafer, a voltage appearing in the semiconductor wafer, and a temperature of the semiconductor wafer is provided on the lower surface as a sensor probe. When the wafer sensor module is placed on the mounting table by the semiconductor wafer transfer means, a light receiving unit that receives light emitted from the light emitting element is provided on the upper surface of the mounting table.
A light guide for guiding light from the light receiving unit to the outside of the semiconductor processing apparatus is provided in the mounting table,
A semiconductor processing apparatus , wherein at least one of the current, the voltage, and the temperature is detected by light guided to the outside by the light guide . In the invention of claim 1,
The light receiving unit, a semiconductor processing apparatus according to claim that you have been placed on the upper surface of the mounting table in accordance with the arrangement state of the light emitting elements of said wafer sensor module. In a semiconductor processing apparatus for processing a semiconductor wafer held on a mounting table in a processing chamber isolated from the atmosphere ,
When the semiconductor wafer is processed in the processing chamber, a plurality of light-emitting elements that emit light in different colors by detecting each of a current flowing through the semiconductor wafer, a voltage appearing in the semiconductor wafer, and a temperature of the semiconductor wafer are provided. When a wafer sensor module provided as a sensor probe in one place on the lower surface is placed on the mounting table by the semiconductor wafer transfer means, light emission of a plurality of light emitting elements gathered in the one place A light receiving part for receiving light collectively is provided on the upper surface of the mounting table,
One light guide path for guiding light from the light receiving unit to the outside of the semiconductor processing apparatus is provided in the mounting table.
The semiconductor processing system in which at least one of the current and the voltage and the temperature, characterized in Rukoto detected by light derived to the outside by the light guide. In a semiconductor processing apparatus for processing a semiconductor wafer held on a mounting table in a processing chamber isolated from the atmosphere ,
When the semiconductor wafer is processed in the processing chamber, a light-emitting element that emits light by detecting at least one of a current flowing through the semiconductor wafer, a voltage appearing in the semiconductor wafer, and a temperature of the semiconductor wafer is provided on the upper surface as a sensor probe. When the wafer sensor module is placed on the mounting table by the semiconductor wafer transfer means, a light receiving portion that receives light emitted from the light emitting element in the processing chamber is provided on a side wall portion of the processing chamber,
The current and at least one of the voltage and the temperature, a semiconductor processing apparatus according to claim Rukoto detected by the light received by the light receiving portion. A wafer sensor module used in the semiconductor processing apparatus according to claim 1,
The wafer sensor module is made of a silicon substrate having substantially the same shape as a semiconductor wafer to be processed by the semiconductor processing apparatus, and includes a light emitting element on a lower surface when placed on the mounting table. A featured wafer sensor module . A wafer sensor module used in the semiconductor processing apparatus according to claim 4,
The wafer sensor module is made of a silicon substrate having substantially the same shape as a semiconductor wafer to be processed by the semiconductor processing apparatus, and has a light emitting element on the upper surface when mounted on the mounting table. Wafer sensor module.

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