WO2023106756A1

WO2023106756A1 - Inspection device and inspection method using same

Info

Publication number: WO2023106756A1
Application number: PCT/KR2022/019592
Authority: WO
Inventors: 방규용
Original assignee: 주식회사 탑 엔지니어링
Priority date: 2021-12-09
Filing date: 2022-12-05
Publication date: 2023-06-15
Also published as: CN118401847A; KR20230087241A; TW202338384A

Abstract

Disclosed in an embodiment is an inspection device comprising: a stage having a plurality of micro light-emitting elements arranged thereon; an electron beam irradiation unit for irradiating the plurality of micro light-emitting elements with an electron beam; and a chamber for accommodating the stage and the electron beam irradiation unit therein, and forming a vacuum.

Description

Inspection device and inspection method using the same

Embodiments relate to an inspection device and an inspection method capable of non-contactly inspecting whether a micro light emitting device is defective.

Currently commercialized displays are represented by LCD (Liquid Crystal Display) and OLED (Organic Light Emitting Diodes). Recently, development of OLED displays is active, but OLED displays have problems in that their lifespan is short and the mass production yield is not good.

A light emitting diode (LED) is one of light emitting devices that emits light when a current is applied thereto. A light emitting diode can emit light with high efficiency at a low voltage, and thus has an excellent energy saving effect. Recently, the luminance problem of light emitting diodes has been greatly improved, and they are applied to various devices such as backlight units of liquid crystal display devices, electronic signboards, displays, and home appliances.

Light emitting diodes containing compounds such as GaN and AlGaN have many advantages, such as having a wide and easily adjustable band gap energy, and can be used in various ways such as light emitting devices, light receiving devices, and various diodes. In particular, it has the advantages of low power consumption, semi-permanent lifespan, fast response speed, safety, and environmental friendliness.

Recently, research on a technology for using a micro light emitting device made of a small light emitting diode as a pixel of a display is being conducted. Since many light emitting devices are manufactured on a single wafer, it is important to accurately inspect the light emitting devices for defects.

A method of inspecting the micro light emitting device can be divided into a contact method in which light is emitted by contacting the micro light emitting device and a non-contact method in which light is emitted without contacting the micro light emitting device.

As shown in FIG. 1, the conventional non-contact inspection apparatus places the micro light emitting device 100 and the field plate 11 apart and forms an electric field by applying a voltage to inject capacitive current into the micro light emitting device 100 to emit light. It is a structure.

However, if the gaps G1 and G2 between the micro light emitting device 100 and the field plate 11 are not constant, the capacitive current level may vary and only some of the micro light emitting devices may emit light. Therefore, there is a problem in that accurate inspection becomes difficult.

Embodiments provide an inspection device that emits light from a micro light emitting device by irradiating an electron beam.

The problem to be solved in the embodiment is not limited thereto, and it will be said that the solution to the problem described below or the purpose or effect that can be grasped from the embodiment is also included.

An inspection device according to one aspect of the present invention includes a stage on which a plurality of micro light emitting devices are disposed; an electron beam irradiator for irradiating electron beams to the plurality of micro light emitting devices; and a chamber accommodating the stage and the electron beam irradiator and forming a vacuum therein.

a photodetector for detecting light emitted from the plurality of micro light emitting devices; and a control unit that determines whether or not the light emitting device is defective by using light emitting information of the plurality of micro light emitting devices detected by the photodetector.

The electron beam emitter may include a first electrode layer and a plurality of emitters formed on the first electrode layer to emit electron beams toward the plurality of micro light emitting devices.

The plurality of emitters may include carbon nanotubes.

A voltage adjusting unit may be included to adjust the voltage applied to the electron beam irradiation unit.

The plurality of micro light emitting devices include a first conductivity type semiconductor layer disposed on a substrate, an active layer disposed on the first conductivity type semiconductor layer, and a second conductivity type semiconductor disposed on the first conductivity type semiconductor layer. The active layer and the second conductivity type semiconductor layer of the plurality of micro light emitting devices are partitioned into plural pieces, the first conductivity type semiconductor layers of the plurality of micro light emitting devices are connected to each other, and the voltage control A part may apply a voltage to the first electrode layer and the first conductivity type semiconductor layer.

The voltage controller may apply a voltage to the first electrode layer and the second electrode layer disposed under the plurality of micro light emitting devices.

An electron beam measuring unit may be included to measure the intensity of the electron beam emitted from the electron beam irradiation unit.

The electron beam irradiation unit includes a plurality of irradiation areas, the electron beam measurement unit includes a plurality of sensing areas corresponding to the plurality of irradiation areas, and the control unit controls the intensity of electron beams detected in some sensing areas within a predetermined reference range. If it is out of range, the electron beam irradiation intensity of the irradiation area corresponding to the partial sensing area may be adjusted.

The light detector may detect light generated from the plurality of micro light emitting devices and emitted to a lower portion of the stage.

The light detector may detect light generated from the plurality of micro light emitting devices and emitted to an upper portion of the electron beam irradiator.

Inspection method according to one feature of the present invention, forming a vacuum inside the chamber; irradiating an electron beam to a plurality of micro light emitting devices disposed inside the chamber; measuring the luminous intensity of the plurality of micro light emitting devices; and determining whether the plurality of micro light emitting devices are defective.

In the irradiating of the electron beam, the micro light emitting device may emit light by irradiating an electron beam from an electron beam irradiator disposed inside the chamber.

between the step of forming the vacuum and the step of irradiating the electron beam, measuring electron beam intensities in a plurality of irradiation areas of an electron beam irradiation unit disposed inside the chamber; and adjusting an electron beam intensity of an irradiation area out of a predetermined intensity range among the plurality of irradiation areas.

According to the embodiment, there is an advantage in that a plurality of micro light emitting devices can be inspected by uniformly emitting light by providing an inspection device that emits light from the micro light emitting devices by irradiating electron beams.

Various advantageous advantages and effects of the present invention are not limited to the above description, and will be more easily understood in the process of describing specific embodiments of the present invention.

1 is a conceptual diagram of a conventional inspection device;

2 is a conceptual diagram of an inspection device according to a first embodiment of the present invention;

3 is a view showing a process of irradiating electron beams to a plurality of micro light emitting devices;

4 is a view showing the principle that a light emitting element emits light by an electron beam,

5 is a first modified example of FIG. 3;

6 is a second modified example of FIG. 3;

7a to 7e are diagrams showing various types of emitters,

8A is a view showing a state in which the electron beam measurement unit measures the uniformity of the electron beam;

8B is a view showing a state in which the first electrode layer and the electron beam measuring unit are divided into a plurality of regions;

9 is a view showing the measured luminous intensity of a plurality of micro light emitting devices;

10 is a conceptual diagram of an inspection device according to a second embodiment of the present invention;

11 is a conceptual diagram of an inspection device according to a third embodiment of the present invention;

12 is a conceptual diagram of an inspection device according to a fourth embodiment of the present invention;

13 is a view showing a state in which an adhesive layer of a pick-up device is attached to a plurality of micro light emitting devices;

14 is a view showing a process of inspecting a plurality of micro light emitting devices after transferring them with a pick-up device;

15 is a modified example of FIG. 14;

16 is a diagram showing a process of transferring a plurality of micro light emitting devices transferred on a pick-up device to another substrate;

17 is a flowchart illustrating an inspection method according to an embodiment of the present invention.

Since the present invention can make various changes and have various embodiments, specific embodiments will be illustrated and described in the drawings. However, this is not intended to limit the present invention to specific embodiments, and should be understood to include all modifications, equivalents, and substitutes included in the spirit and scope of the present invention.

Terms including ordinal numbers such as second and first may be used to describe various components, but the components are not limited by the terms. These terms are only used for the purpose of distinguishing one component from another. For example, a second element may be termed a first element, and similarly, a first element may be termed a second element, without departing from the scope of the present invention. The terms and/or include any combination of a plurality of related recited items or any of a plurality of related recited items.

It is understood that when an element is referred to as being "connected" or "connected" to another element, it may be directly connected or connected to the other element, but other elements may exist in the middle. It should be. On the other hand, when an element is referred to as “directly connected” or “directly connected” to another element, it should be understood that no other element exists in the middle.

Terms used in this application are only used to describe specific embodiments, and are not intended to limit the present invention. Singular expressions include plural expressions unless the context clearly dictates otherwise. In this application, the terms "include" or "have" are intended to designate that there is a feature, number, step, operation, component, part, or combination thereof described in the specification, but one or more other features It should be understood that the presence or addition of numbers, steps, operations, components, parts, or combinations thereof is not precluded.

Unless defined otherwise, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which the present invention belongs. Terms such as those defined in commonly used dictionaries should be interpreted as having a meaning consistent with the meaning in the context of the related art, and unless explicitly defined in the present application, they should not be interpreted in an ideal or excessively formal meaning. don't

Hereinafter, the embodiments will be described in detail with reference to the accompanying drawings, but the same or corresponding components regardless of reference numerals are given the same reference numerals, and overlapping descriptions thereof will be omitted.

2 is a conceptual diagram of an inspection device according to a first embodiment of the present invention, FIG. 3 is a view showing a process of irradiating electron beams to a plurality of micro light emitting devices, and FIG. It is a drawing showing

2 and 3, the inspection apparatus according to the embodiment includes a stage 300 on which a plurality of micro light emitting devices 100 are disposed, and an electron beam irradiator 200 for irradiating electron beams to the plurality of micro light emitting devices 100. , and a chamber 500 accommodating the stage 300 and the electron beam irradiator 200 and forming a vacuum therein.

The chamber 500 accommodates the stage 300 and the electron beam irradiator 200, and can prevent electron beams from scattering by forming a vacuum therein. The chamber 500 may maintain a vacuum of 10 ⁻⁵ Torr or less, and may have a continuous use time of 10,000 hours or more, but is not necessarily limited thereto, and may be adjusted to satisfy various conditions for irradiating electron beams to the micro light emitting device.

The micro light emitting device 100 may be a light emitting diode having a size of 1 μm to 200 μm. Illustratively, the size of the micro light emitting device 100 may be 30 μm to 60 μm, but is not necessarily limited thereto, and light emitting devices of various sizes may be applied. In addition to the micro light emitting device 100, a mini-sized light emitting device of 200 μm to 500 μm may also be applied.

The micro light emitting device 100 may be mesa-etched (H1) so that the active layer 130 and the second conductivity type semiconductor layer 140 may be divided into a plurality of pieces, but the first conductivity type semiconductor layer 120 may be connected to each other. there is. However, it is not necessarily limited thereto, and the first conductivity type semiconductor layer 120 may also be completely separated.

The micro light emitting device 100 is a metal organic chemical vapor deposition (MOCVD), a chemical vapor deposition (CVD), a plasma-enhanced chemical vapor deposition (PECVD), a molecular beam growth method (Molecular Epitaxial growth may be performed on the substrate 110 using a method such as beam epitaxy (MBE), hydride vapor phase epitaxy (HVPE), or sputtering.

The electron beam irradiator 200 may include a first electrode layer 210 and a plurality of emitters 220 formed under the first electrode layer 210 to emit electron beams toward the plurality of micro light emitting devices 100. there is.

The first electrode layer 210 may include Al, Ag, Cu, Ti, Pt, Ni, Ir, or Rh, but is not necessarily limited thereto. Illustratively, the first electrode layer 210 may be made of a transparent electrode such as ITO. The first electrode layer 210 may be a cathode.

The emitter 220 may include carbon nanotubes (CNT), but is not necessarily limited thereto. An electron beam may be generated by an electric field applied to the carbon nanotubes.

A plurality of carbon nanotubes constituting the emitter 220 may have a shape extending from the first electrode layer 210 in a first direction (vertical direction) toward the stage 300 . However, it is not necessarily limited thereto, and the plurality of carbon nanotubes may have a shape extending in a second direction (horizontal direction) perpendicular to the first direction.

The plurality of emitters 220 may be uniformly arranged on the first electrode layer 210 . Accordingly, electron beams emitted from the plurality of emitters 220 may be uniformly irradiated to the plurality of micro light emitting devices 100 .

The voltage controller 400 may apply a voltage to the first electrode layer 210 and the first conductivity type semiconductor layer 120 of the micro light emitting device 100 . The first electrode layer 210 may serve as a cathode, and the first conductive semiconductor layer 120 may serve as an anode.

The voltage regulator 400 may pulse drive a high voltage of 3000V to 5000V at 1KHz or less. When a high voltage pulse is applied, an electric field may be formed between the first electrode layer 210 and the micro light emitting device 100 . Therefore, the electron beam emitted from the emitter 220 can be effectively irradiated to the micro light emitting device 100 .

The photodetector 600 may capture an image or video of the plurality of micro light emitting devices 100 emitting light. The photodetector 600 may be a camera, but is not necessarily limited thereto, and various detection equipment capable of detecting whether or not the micro light emitting device 100 emits light may be applied without limitation.

The photodetector 600 may analyze the collected emission intensity (spectrum) or wavelength, convert the collected light into an electrical signal, and transmit the electrical signal to the controller 700 .

The control unit 700 is a processor that controls overall aspects of the inspection device. The controller 700 controls the operation of the electron beam emitter 200 and the voltage controller 400, receives the measurement result of the photodetector 600, and outputs map data including the evaluation result of the micro light emitting device 100. can do.

The control unit 700 includes a memory (not shown) for storing data for an algorithm or a program for reproducing the algorithm for controlling the operation of components in the testing device, and a processor for performing the above-described operation using the data stored in the memory. (not shown). In this case, the memory and the processor may be implemented as separate chips, but are not necessarily limited thereto, and the memory and the processor may be implemented as a single chip.

The control unit 700 may be connected to a storage unit (not shown) that stores processed data, and such a storage unit may include a Read Only Memory (ROM), a Programmable ROM (PROM), an Erasable Programmable ROM (EPROM), and an Electrically Erasable Programmable ROM (EEPROM). Implemented as at least one of non-volatile memory devices such as ROM) and flash memory, volatile memory devices such as RAM (Random Access Memory), or storage media such as Hard Disk Drive (HDD) and CD-ROM It can be, but is not necessarily limited thereto.

Each micro light emitting device 100 may include a first conductivity type semiconductor layer 120 , an active layer 130 , and a second conductivity type semiconductor layer 140 . The first conductivity type semiconductor layer 120 may be implemented with a compound semiconductor such as group III-V or group II-VI, and the first dopant may be doped in the first conductivity type semiconductor layer 120 .

The first conductivity-type semiconductor layer 120 is a semiconductor material having a composition formula of Al _x In _y Ga _(1-xy) N (0 x 1, 0 y 1, 0 x + y 1), InAlGaN, AlGaAs, GaP, GaAs , GaAsP, AlGaInP may be formed of any one or more, but is not limited thereto. When the first dopant is an n-type dopant such as Si, Ge, Sn, Se, or Te, the first conductivity-type semiconductor layer 120 may be an n-type nitride semiconductor layer.

The active layer 130 may be disposed on the first conductivity type semiconductor layer 120 . Also, the active layer 130 may be disposed between the first conductivity type semiconductor layer 120 and the second conductivity type semiconductor layer 140 .

The active layer 130 is a layer where electrons (or holes) injected through the first conductivity type semiconductor layer 120 and holes (or electrons) injected through the second conductivity type semiconductor layer 140 meet. The active layer 130 transitions to a lower energy level as electrons and holes recombine, and can generate light having a wavelength corresponding to the transition.

The active layer 130 may have a structure of any one of a single well structure, a multi-well structure, a single quantum well structure, a multi quantum well (MQW) structure, a quantum dot structure, or a quantum wire structure, and the active layer 130 The structure of is not limited to this. The active layer 130 may generate light in a visible light wavelength range.

The second conductivity type semiconductor layer 140 may be disposed on the active layer 130 . The second conductivity type semiconductor layer 140 may be implemented with a compound semiconductor such as group III-V or group II-VI, and the second conductivity type semiconductor layer 140 may be doped with a second dopant.

The second conductive semiconductor layer 140 is a semiconductor material having a composition formula of In _x5 Al _y2 Ga _1-x5-y2 N (0 x5 1, 0 y2 1, 0 x5+y2 1) or AlInN, AlGaAs, GaP, GaAs , GaAsP, may be formed of a material selected from AlGaInP. When the second dopant is a p-type dopant such as Mg, Zn, Ca, Sr, or Ba, the second conductivity-type semiconductor layer 140 doped with the second dopant may be a p-type semiconductor layer.

Referring to FIG. 4 , when electron beams E are irradiated onto the micro light emitting device, the electron beams collide in the active layer to generate electron-hole pairs. The generated electron-hole pairs can be confined to the well layer by the barrier layer of the active layer. The bound electrons and holes may emit visible light through recombination.

The intensity of visible light emitted from the micro light emitting device may be proportional to the intensity (or density) of the electron beam. Accordingly, the intensity (or density) of the electron beam may be adjusted so that light emitted from the micro light emitting device can be detected and whether or not a defect is determined.

The micro light emitting device may include a blue light emitting device, a green light emitting device, and a red light emitting device. Accordingly, the micro light emitting device may emit light in a blue, green or red wavelength band. In addition, in the case of a micro light emitting device on which transfer is completed on a panel substrate, light in blue, green, and red wavelength bands may be simultaneously detected.

According to the embodiment, since it is a cathode luminescence (CL) method in which micro light emitting devices emit light by irradiating electron beams, a plurality of micro light emitting devices 100 can emit uniform light compared to other non-contact light emitting methods.

Scanning Electron Microscope (SEM) is a microscope widely used to observe small-sized microstructures and shapes in a solid state. It is an analysis equipment that can observe three-dimensional shapes at high magnification.

A scanning electron microscope consists of an electron gun that generates and accelerates electron beams, a focusing lens and objective lens that narrows the electron beams, and a deflection coil that controls the path of electron beams until electrons leaving the filament reach the specimen. Consists of.

However, the scanning electron microscope is different from the present embodiment in which electron beams are irradiated over a large area in that a chemical composition is measured by irradiating electron beams on a local area.

A field emission display is a display in which a field emission emitter array, which is a cold cathode electron source, is arranged in a matrix form and electron beams are irradiated to a phosphor to emit cathode light. However, the emitter of the field emission display is generally made of micro tips and is different from the present embodiment in that it is not made of carbon nanotubes. Also, the required uniformity of the electron beam is lower than that of the present embodiment.

In addition, the PL (Photoluminescence) method is a method in which light is injected into a sample and light is generated by excitation and recombination with the energy, whereas in the Cathodoluminescence (CL) method of the embodiment, field-emitted electrons are accelerated by an electric field. After obtaining energy, it is injected into the LED and there is a difference in that light is generated.

FIG. 5 is a first modified example of FIG. 3 , and FIG. 6 is a second modified example of FIG. 3 .

Referring to FIG. 5 , a plurality of micro light emitting devices 100 may be fabricated by performing isolation on the light emitting structure and then inspected for defects. According to the embodiment, since the first conductivity-type semiconductor layer 120 of each micro light emitting device 100 is also completely separated by mesa etching (H2), the voltage adjusting unit 400 includes the first electrode layer 210 and a plurality of micro It may be connected to a separate second electrode layer (not shown) disposed below the light emitting device 100 .

When the stage 300 is made of a conductive material, the voltage controller 400 may be connected to the first electrode layer 210 and the stage 300 to form an electric field.

The first photodetector 610 disposed above the electron beam irradiator 200 may detect light emitted from the top of the active layer 130 and transmitted through the electron beam irradiator 200 . If the first electrode layer 210 is made of a light-transmitting electrode such as ITO and the electron beam irradiator 200 has sufficient light-transmitting properties, the first photodetector 610 can effectively measure the light emission intensity of the micro light emitting device 100. .

The second photodetector 620 disposed below the stage 300 may detect light emitted from the lower portion of the active layer 130 and passing through the stage 300 . When the stage 300 is made of a light-transmissive material, the second photodetector 620 can effectively measure the light emission intensity of the micro light emitting device 100 .

Although the embodiment exemplifies that the first photodetector 610 and the second photodetector 620 are simultaneously provided, it is not necessarily limited thereto, and only one of the first photodetector 610 and the second photodetector 620 is used. may be provided.

Referring to FIG. 6 , the inspection may be performed even before the light emitting structure is separated into a plurality of micro light emitting devices. Even when a non-emission region T1 is formed due to a defect in a partial region of the light emitting structure, whether or not light is emitted may be inspected in the remaining regions.

That is, according to the embodiment, a state in which only a portion of the light emitting structure is mesa-etched (see FIG. 3), a state in which a plurality of light emitting elements are manufactured by isolation (see FIG. 5), or a state in which the light emitting structure is not separated (see FIG. 6 ) can also be inspected. In addition, inspection is possible even after the micro light emitting device is separated from the substrate and transferred.

7A to 7E are diagrams showing various types of emitters.

According to the embodiment, it may be important that the electron beam is uniformly irradiated to the plurality of micro light emitting devices. Accordingly, various structures that emit uniform electron beams may be selected as the emitter 220 .

Referring to FIG. 7A , the first electrode layer 210 is disposed on the substrate 230, and the emitter 220 may have a sharp end to easily emit electrons. At this time, only the end portion of the emitter 220 may be exposed to the outside by the insulating layer 241 and the gate 242 . Referring to FIG. 7B , the emitter 220 may have a rapidly sharpening region toward the top.

Referring to FIG. 7C , the emitter 220 may be disposed in a horizontal direction to emit electrons. At this time, the emitted electrons may be bent and emitted in a vertical direction. Referring to FIG. 7D , when a voltage is applied to the 1-1st electrode layer 210a and the 1-2nd electrode layer 210b, light is emitted from the first emitter 220-1 formed on the 1-1st electrode layer 210a. It may be irradiated and reflected by the second emitter 220-2. Referring to FIG. 7E , electrons emitted from the emitter 220 may be emitted in a lateral direction and collide with a block 243 to change a traveling direction.

8A is a diagram showing a state in which the electron beam measurement unit measures the uniformity of the electron beam, and FIG. 8B is a diagram showing a state in which the first electrode layer and the electron beam measurement unit are divided into a plurality of regions.

Referring to FIGS. 8A and 8B , the electron beam measuring unit 910 is disposed between the electron beam irradiation unit 200 and the stage 300 to measure the uniformity of the electron beam. As described above, uniform light emission can be achieved only when uniform electron beams are irradiated to the plurality of micro light emitting devices 100 . If the intensity of the electron beam is weakened in some areas, there is a problem in that it can be determined that the light emitting device is defective even though it is a normal light emitting device.

Since the inspection method by irradiating electron beams is an indirect measurement method, the emission intensity may be relatively weak compared to the method of directly applying current to emit light. Therefore, if the intensity of the electron beam is not uniform, it may be determined that some light emitting devices do not emit light. Therefore, accurate inspection may be difficult.

According to the embodiment, the electron beam irradiation unit 200 may be divided into a plurality of irradiation areas S1 to S24. The voltage level of each irradiation area may be individually adjusted by the voltage controller 400 . Although the plurality of irradiation areas S1 to S24 is illustrated as being 24, it is not necessarily limited thereto and the number of irradiation areas may be adjusted in various ways.

The electron beam measuring unit 910 may be divided into a plurality of sensing regions P1 to P24. The plurality of sensing areas P1 to P24 may be arranged to match each other with the plurality of irradiation areas S1 to S24. When the plurality of irradiation regions S1 to S24 are divided into 24, the plurality of detection regions P1 to P24 may also be divided into the same number.

According to an embodiment, before irradiating the electron beam to the micro light emitting device 100, the electron beam measurement unit 910 first measures the uniformity of the electron beam to detect a point where the intensity of the electron beam is relatively non-uniform, and the electron beam intensity in the corresponding area. (or density) can be adjusted to match a predetermined reference range (or average intensity).

The electron beam measuring unit 910 is disposed below the electron beam irradiation unit 200 during measurement by a driving unit (not shown), and may be removed from the lower portion of the electron beam irradiation unit 200 when the measurement is completed.

Exemplarily, the tenth radiation region S10 disposed in the center may have relatively strong intensity due to the addition of a part of electron beams irradiated from the neighboring radiation regions S4, S9, S16, and S11. In comparison, since the number of neighboring radiation regions S2 and S7 is small, the amount of electron beam added to the first radiation region S1 disposed at the edge may be relatively weak. Therefore, the intensity of the electron beam measured in the first detection region P1 may be weaker than the intensity of the electron beam measured in the tenth detection region P10.

In this case, the controller may control the voltage regulator 400 to increase the voltage level of the first radiation region S1 compared to the tenth radiation region S10. Therefore, the intensity of the electron beam in the central region and the intensity of the electron beam in the edge region can be uniformly controlled.

Alternatively, when it is determined that the intensity of the ninth sensing region P9 is greater than the predetermined reference range (or average intensity) as a result of the inspection, the voltage level of the ninth irradiation region S9 is lowered to reach the predetermined reference range (or average intensity). It can also be closely adjusted. In addition, when it is determined that the intensity of the tenth sensing region P10 is weak, the voltage level of the tenth irradiation region S10 may be increased to be close to a predetermined reference range (or average intensity). Through this adjustment, the uniformity of the electron beam irradiated from the electron beam irradiator 200 can be constantly adjusted.

9 is a view showing measured emission intensities of a plurality of micro light emitting devices.

Referring to FIG. 9 , the controller may generate map data by collecting emission intensities of the plurality of micro light emitting devices 100 collected by a camera. The control unit may determine that the micro light emitting device 101 having an intensity lower than a predetermined emission intensity or not emitting light is defective.

During the transfer process, only the normal micro light emitting devices 100 excluding the micro light emitting devices 101 determined to be defective may be selectively transferred. In addition, when the inspection is performed after the transfer is completed, the micro light emitting device 101 determined to be defective may be selectively removed.

10 is a conceptual diagram of an inspection device according to a second embodiment of the present invention, and FIG. 11 is a conceptual diagram of an inspection device according to a third embodiment of the present invention.

Referring to FIG. 10 , the chamber 500 includes a first door 510 into which the micro light emitting device 100 can be introduced, a second door 520 through which the micro light emitting device 100 that has been inspected can be discharged, And it may be provided with a vacuum pump 530 to form a vacuum. According to this configuration, since the micro light emitting device 100 can be continuously introduced and discharged by the robot arm or the conveyor belt, continuous inspection can be performed.

In addition to the first electrode layer 210 and the emitter 220, the electron beam irradiator 200 further includes a body 250 on which the first electrode layer 210 is disposed and a first driving unit 260 that moves the body 250 up and down. can do. According to this configuration, when the micro light emitting device 100 is seated on the stage 300, the electron beam irradiator 200 may descend.

Since the distance between the stage 300 and the electron beam emitter 200 is optimally adjusted, there is an advantage in that the electron beam can be uniformly irradiated. However, it is not necessarily limited to this, and a second driving unit 310 that moves the stage 300 up and down may be disposed.

That is, the electron beam irradiation unit 200 may move up and down by the first driving unit 260 and the stage 300 may move up and down by the second driving unit 310 . In addition, the electron beam irradiation unit 200 and the stage 300 may move up and down together by the first driving unit 260 and the second driving unit 310 .

The first photodetector 610 may be disposed inside the body 250 of the electron beam emitter 200 . If the first electrode layer 210 and the emitter 220 are sufficiently transparent, the first photodetector 610 can effectively detect light emitted upward from the micro light emitting device 100 .

The second photodetector 620 may be disposed below the stage 300 . If the stage 300 is sufficiently transparent, the second photodetector 620 can effectively detect the light emitted downward from the micro light emitting device 100 .

Referring to FIG. 11 , the inspection device may include a structure for scanning the micro light emitting device 100 . The electron beam irradiation unit 200 may irradiate an electron beam to a partial area of the micro light emitting device 100, and the photodetector 600 may detect light emission intensity of the micro light emitting device 100 in the corresponding area. In addition, the electron beam irradiator 200 and the photodetector 600 may inspect the plurality of micro light emitting devices 100 while moving in one direction D1.

According to this structure, there is an advantage in that the size of the electron beam irradiation unit can be made small, and inspection can be performed regardless of the size of the micro light emitting device.

12 is a conceptual diagram of a test device according to a fourth embodiment of the present invention, FIG. 13 is a view showing a state in which an adhesive layer of a pick-up device is attached to a plurality of micro light emitting elements, and FIG. FIG. 15 is a modified example of FIG. 14, and FIG. 16 is a view showing a process of transferring a plurality of micro light emitting devices transferred to a pick-up device to another substrate.

Referring to FIG. 12 , a process of transferring the micro light emitting device 100 to a panel substrate is essential. The transfer process may be defined as an operation of separating the micro light emitting device 100 from the growth substrate 110 and transferring it to a panel substrate.

As the transfer technique, a technique of transferring using static electricity, a technique of transferring using Laser-Lift-Off (LLO), a technique of transferring using an adhesive tape, and the like may be used.

For example, in the technique of using an adhesive tape, the micro light emitting device 100 may be separated from the growth substrate 110 by using the adhesive layer 820 formed on the header 800 .

Referring to FIG. 13 , the header 800 may descend and the adhesive layer 820 may adhere to the micro light emitting device 100 . Then, as shown in FIG. 14 , when the header 800 is raised by the lifting part 830 , the micro light emitting device 100 may be separated from the substrate 110 and transferred to the adhesive layer 820 .

At this time, the bonding strength between the substrate 110 and the micro light emitting device 100 may be adjusted to be weaker than the bonding strength between the adhesive layer 820 and the micro light emitting device 100 . For example, the bonding force between the substrate 110 and the micro light emitting device 100 may be reduced by partially removing a contact surface between the substrate 110 and the micro light emitting device 100 by etching the substrate 110 .

An electron beam emitter 200 and a photodetector 600 may be disposed on the header 800 . If the transfer process is performed in a vacuum state, the electron beam emitted from the electron beam irradiator 200 may pass through the adhesive layer 820 and be irradiated to the plurality of micro light emitting devices 100 . In addition, if the adhesive layer 820 and the electron beam emitter 200 are sufficiently transparent, the light detector 600 may detect light emitted from the plurality of micro light emitting devices 100 .

According to this configuration, inspection may be possible in the process of transferring the micro light emitting device 100 without having a separate inspection device. In the case of an electrostatic method or an LLO method capable of selectively transferring the micro light emitting device 100, such an inspection system may be more effective. Exemplarily, the header 800 may be disposed on the micro light emitting device 100 and then inspected for defects by the above inspection method, and only normal light emitting devices may be selectively transferred.

Referring to FIG. 15 , the photodetector 600 may be disposed below the header 800 . Therefore, when the micro light emitting device 100 emits light by the electron beam irradiator 200 disposed within the header 800, the photodetector 600 disposed below the header 800 can effectively measure the luminous intensity. there is.

Referring to FIG. 16 , the header 800 may move to the transfer substrate 920 to transfer the plurality of micro light emitting devices 100 thereto. For example, when UV or heat is applied to the adhesive layer 830 of the header 800, the adhesive layer 830 may lose viscosity. Accordingly, the plurality of micro light emitting devices 820 may be transferred to the transfer substrate 920 . The transfer substrate 920 may be a display panel substrate or a separate adhesive substrate.

2 and 17, the inspection method according to an embodiment of the present invention includes forming a vacuum inside the chamber 500 (S10), and the micro light emitting device 100 disposed inside the chamber 500. irradiating an electron beam to (S20); measuring the luminous intensity of the micro light emitting device 100 (S30); and determining whether the micro light emitting device 100 is defective (S40).

In the step of forming a vacuum inside the chamber 500 (S10), when the micro light emitting device 100 is disposed in the chamber 500, a vacuum pump is operated to adjust the vacuum inside the chamber 500 to 10 ^-5 Torr or less. can When the vacuum in the chamber 500 is adjusted to 10 ⁻⁵ Torr or less, scattering of the electron beam to prevent plasma from being formed.

In the step of irradiating the electron beam to the micro light emitting device 100 disposed inside the chamber 500 (S20), a high voltage of 3000V to 5000V is pulsed at 1 KHz or less between the electron beam irradiator 200 and the micro light emitting device 100. can do.

When electron beams are irradiated onto the micro light emitting device 100, electron-hole pairs may be generated by colliding the electron beams in the active layer. The generated electron-hole pairs can be confined to the well layer by the barrier layer of the active layer. The bound electrons and holes may emit visible light through recombination.

In the step of measuring the emission intensity of the micro light emitting device 100 ( S30 ), the photodetector 600 may capture an image or video of the plurality of micro light emitting devices 100 emitting light. The photodetector 600 may be a camera, but is not necessarily limited thereto, and various detection equipment capable of detecting whether or not the micro light emitting device 100 emits light may be applied without limitation.

The photodetector 600 may analyze the collected emission intensity or wavelength, convert it into an electrical signal, and transmit the electrical signal to the controller 700 .

Determining whether the micro light emitting device 100 is defective (S40) detects light emitted from each micro light emitting device 100 and determines whether the micro light emitting device 100 emitting light with a predetermined reference intensity or less is defective. can be judged by

According to the embodiment, between the step of forming a vacuum (S10) and the step of irradiating an electron beam (S20), measuring electron beam intensities in a plurality of radiation areas of an electron beam irradiation unit disposed inside the chamber; and adjusting the intensity of the electron beam in an irradiation area out of a predetermined intensity range among the plurality of irradiation areas.

Referring to FIGS. 8A and 8B , in the step of measuring the electron beam intensity, the electron beam measurement unit 910 may first measure the uniformity of the electron beam before irradiating the electron beam to the micro light emitting device 100 . The electron beam measuring unit 910 is disposed below the electron beam irradiation unit 200 during measurement by a driving unit (not shown), and may be removed from the lower portion of the electron beam irradiation unit 200 when the measurement is completed.

The electron beam measuring unit 910 may be divided into a plurality of sensing regions P1 to P24. The plurality of sensing areas P1 to P24 may be arranged to match each other with the plurality of irradiation areas S1 to S24. Accordingly, it is possible to determine which irradiation area has non-uniform electron beams using values measured in the plurality of sensing areas P1 to P24.

In the adjusting of the electron beam intensity, a point where the intensity of the electron beam is relatively non-uniform may be detected and the intensity of the electron beam in the corresponding region may be adjusted to match a predetermined reference range (or average intensity).

For example, the voltage level of the irradiation area may be increased at a point where the intensity of the electron beam is weak, and the voltage level of the irradiation area may be decreased at a point where the intensity of the electron beam is high.

Although the above has been described with reference to the embodiments, this is only an example and does not limit the present invention, and those skilled in the art to which the present invention belongs will not deviate from the essential characteristics of the present embodiment. It will be appreciated that various variations and applications are possible. For example, each component specifically shown in the embodiment can be modified and implemented. And differences related to these modifications and applications should be construed as being included in the scope of the present invention as defined in the appended claims.

Claims

a stage on which a plurality of micro light emitting devices are disposed;

an electron beam irradiator for irradiating electron beams to the plurality of micro light emitting devices; and

and a chamber accommodating the stage and the electron beam irradiator and forming a vacuum therein.
According to claim 1,

a photodetector for detecting light emitted from the plurality of micro light emitting devices; and

and a control unit for determining whether or not a defect is present using light emitting information of the plurality of micro light emitting devices detected by the photodetector.
According to claim 2,

The electron beam irradiation unit includes a first electrode layer and a plurality of emitters formed on the first electrode layer to emit electron beams toward the plurality of micro light emitting devices.
According to claim 3,

Wherein the plurality of emitters include carbon nanotubes.
According to claim 3,

and a voltage controller configured to adjust a voltage applied to the electron beam irradiator.
According to claim 5,

The plurality of micro light emitting devices include a first conductivity type semiconductor layer disposed on a substrate, an active layer disposed on the first conductivity type semiconductor layer, and a second conductivity type semiconductor disposed on the first conductivity type semiconductor layer. contains layers,

The active layer and the second conductivity type semiconductor layer of the plurality of micro light emitting devices are partitioned into a plurality, and the first conductivity type semiconductor layers of the plurality of micro light emitting devices are connected to each other;

The voltage adjusting unit applies a voltage to the first electrode layer and the first conductivity-type semiconductor layer.
According to claim 5,

The voltage adjusting unit applies a voltage to the first electrode layer and the second electrode layer disposed under the plurality of micro light emitting devices.
According to claim 5,

and an electron beam measurement unit for measuring an intensity of an electron beam emitted from the electron beam irradiation unit.
According to claim 8,

The electron beam irradiation unit includes a plurality of irradiation areas,

The electron beam measuring unit includes a plurality of sensing areas corresponding to the plurality of irradiation areas,

Wherein the control unit adjusts the electron beam irradiation intensity of the irradiation area corresponding to the partial sensing area when the intensity of the electron beam detected in the partial sensing area deviates from a predetermined reference range.
According to claim 2,

The light detection unit detects light generated from the plurality of micro light emitting devices and emitted to a lower portion of the stage.
According to claim 2,

The light detection unit detects light generated from the plurality of micro light emitting devices and emitted to an upper portion of the electron beam irradiation unit.
forming a vacuum inside the chamber;

irradiating an electron beam to a plurality of micro light emitting devices disposed inside the chamber;

measuring the luminous intensity of the plurality of micro light emitting devices; and

and determining whether the plurality of micro light emitting devices are defective.
According to claim 12,

The step of irradiating the electron beam,

An inspection method in which the micro light emitting device emits light by irradiating an electron beam from an electron beam irradiator disposed inside the chamber.
According to claim 12,

Between the step of forming the vacuum and the step of irradiating the electron beam,

measuring electron beam intensities in a plurality of irradiation areas of an electron beam irradiation unit disposed inside the chamber; and

and adjusting an electron beam intensity of an irradiation area out of a predetermined intensity range among the plurality of irradiation areas.