JP3748410B2 - 研磨方法及び半導体装置の製造方法 - Google Patents

研磨方法及び半導体装置の製造方法 Download PDF

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Publication number
JP3748410B2
JP3748410B2 JP2001398479A JP2001398479A JP3748410B2 JP 3748410 B2 JP3748410 B2 JP 3748410B2 JP 2001398479 A JP2001398479 A JP 2001398479A JP 2001398479 A JP2001398479 A JP 2001398479A JP 3748410 B2 JP3748410 B2 JP 3748410B2
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JP
Japan
Prior art keywords
sic
polishing
acid
organic acid
based compound
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Expired - Fee Related
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JP2001398479A
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English (en)
Japanese (ja)
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JP2003197574A5 (https=
JP2003197574A (ja
Inventor
学 南幅
延行 倉嶋
博之 矢野
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Toshiba Corp
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Toshiba Corp
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Priority to JP2001398479A priority Critical patent/JP3748410B2/ja
Priority to US10/326,407 priority patent/US6995090B2/en
Publication of JP2003197574A publication Critical patent/JP2003197574A/ja
Publication of JP2003197574A5 publication Critical patent/JP2003197574A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/062—Manufacture or treatment of conductive parts of the interconnections by smoothing of conductive parts, e.g. by planarisation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/074—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H10W20/077—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers on sidewalls or on top surfaces of conductors

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2001398479A 2001-12-27 2001-12-27 研磨方法及び半導体装置の製造方法 Expired - Fee Related JP3748410B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2001398479A JP3748410B2 (ja) 2001-12-27 2001-12-27 研磨方法及び半導体装置の製造方法
US10/326,407 US6995090B2 (en) 2001-12-27 2002-12-23 Polishing slurry for use in CMP of SiC series compound, polishing method, and method of manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001398479A JP3748410B2 (ja) 2001-12-27 2001-12-27 研磨方法及び半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2003197574A JP2003197574A (ja) 2003-07-11
JP2003197574A5 JP2003197574A5 (https=) 2004-07-08
JP3748410B2 true JP3748410B2 (ja) 2006-02-22

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Family Applications (1)

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JP2001398479A Expired - Fee Related JP3748410B2 (ja) 2001-12-27 2001-12-27 研磨方法及び半導体装置の製造方法

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Country Link
US (1) US6995090B2 (https=)
JP (1) JP3748410B2 (https=)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI415926B (zh) * 2003-07-11 2013-11-21 Ｗ Ｒ 康格雷氏公司 化學機械研磨用磨粒
US20050056810A1 (en) * 2003-09-17 2005-03-17 Jinru Bian Polishing composition for semiconductor wafers
WO2005099388A2 (en) * 2004-04-08 2005-10-27 Ii-Vi Incorporated Chemical-mechanical polishing of sic surfaces using hydrogen peroixde or ozonated water solutions in combination with colloidal abrasive
US20060108325A1 (en) * 2004-11-19 2006-05-25 Everson William J Polishing process for producing damage free surfaces on semi-insulating silicon carbide wafers
KR20080042043A (ko) * 2005-09-09 2008-05-14 아사히 가라스 가부시키가이샤 연마제, 피연마면의 연마 방법 및 반도체 집적 회로 장치의제조 방법
US7678700B2 (en) * 2006-09-05 2010-03-16 Cabot Microelectronics Corporation Silicon carbide polishing method utilizing water-soluble oxidizers
US7998866B2 (en) * 2006-09-05 2011-08-16 Cabot Microelectronics Corporation Silicon carbide polishing method utilizing water-soluble oxidizers
US7723234B2 (en) * 2006-11-22 2010-05-25 Clarkson University Method for selective CMP of polysilicon
JP4523935B2 (ja) * 2006-12-27 2010-08-11 昭和電工株式会社 炭化珪素単結晶基板の研磨用水系研磨スラリー及び研磨法。
KR101453082B1 (ko) * 2007-06-15 2014-10-28 삼성전자주식회사 교류 구동형 양자점 전계발광소자
US9548211B2 (en) * 2008-12-04 2017-01-17 Cabot Microelectronics Corporation Method to selectively polish silicon carbide films
MY158571A (en) 2009-03-13 2016-10-14 Saint Gobain Ceramics Chemical mechanical planarization using nanodiamond
KR101094161B1 (ko) 2009-10-19 2011-12-14 주식회사 케이씨텍 화학적 기계적 연마용 슬러리의 제조 방법
KR101203136B1 (ko) * 2010-03-22 2012-11-20 국립대학법인 울산과학기술대학교 산학협력단 나노 와이어 제조 방법
US20130092871A1 (en) * 2010-06-23 2013-04-18 Nissan Chemical Industries, Ltd. Composition for polishing silicon carbide substrate and method for polishing silicon carbide substrate
KR102050783B1 (ko) * 2011-11-25 2019-12-02 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물
JP6068790B2 (ja) * 2011-11-25 2017-01-25 株式会社フジミインコーポレーテッド 研磨用組成物の製造方法
KR101612520B1 (ko) 2012-05-10 2016-04-14 에어 프로덕츠 앤드 케미칼스, 인코오포레이티드 화학 첨가제를 지닌 화학적 기계적 폴리싱 조성물 및 이를 사용하는 방법
US8999193B2 (en) 2012-05-10 2015-04-07 Air Products And Chemicals, Inc. Chemical mechanical polishing composition having chemical additives and methods for using same
US9551075B2 (en) * 2014-08-04 2017-01-24 Sinmat, Inc. Chemical mechanical polishing of alumina
CN109715751A (zh) 2016-09-23 2019-05-03 圣戈本陶瓷及塑料股份有限公司 化学机械平坦化浆料及其形成方法
CN112029417A (zh) * 2020-09-30 2020-12-04 常州时创新材料有限公司 一种用于碳化硅cmp的抛光组合物及其制备方法
US20250376604A1 (en) * 2024-06-05 2025-12-11 Entegris, Inc. Silica-based slurry for selective polishing of silicon nitride and silicon carbide
CN119458136B (zh) * 2024-10-15 2025-09-16 北京晶亦精微科技股份有限公司 晶圆的混合键合表面平坦化工艺方法及化学机械抛光设备

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3297220B2 (ja) * 1993-10-29 2002-07-02 株式会社東芝 半導体装置の製造方法および半導体装置
JP3523107B2 (ja) * 1999-03-17 2004-04-26 株式会社東芝 Ｃｍｐ用スラリおよびｃｍｐ法
US6611060B1 (en) * 1999-10-04 2003-08-26 Kabushiki Kaisha Toshiba Semiconductor device having a damascene type wiring layer
JP3736249B2 (ja) 2000-01-12 2006-01-18 Ｊｓｒ株式会社 半導体装置の製造に用いる化学機械研磨用水系分散体
KR100481651B1 (ko) * 2000-08-21 2005-04-08 가부시끼가이샤 도시바 화학 기계 연마용 슬러리 및 반도체 장치의 제조 방법
US20040018697A1 (en) * 2002-07-26 2004-01-29 Chung Henry Wei-Ming Method and structure of interconnection with anti-reflection coating

Also Published As

Publication number Publication date
US6995090B2 (en) 2006-02-07
JP2003197574A (ja) 2003-07-11
US20030124850A1 (en) 2003-07-03

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