JP3739952B2 - Substrate processing equipment - Google Patents

Description

[0001]
[Technical field to which the invention belongs]
The present invention is a substrate processing for performing various substrate processing such as substrate cleaning and etching on a thin plate substrate (hereinafter simply referred to as “substrate”) such as a semiconductor substrate or a liquid crystal glass substrate with a processing liquid (including pure water). Relates to the device.
[0002]
[Prior art]
A plurality of substrates are accommodated in a substrate processing tank, pure water adjusted to a predetermined temperature is supplied from the bottom of the substrate processing tank into the substrate processing tank, and the substrate is overflowed from the top of the substrate processing tank There is a substrate processing apparatus for cleaning a substrate with an ascending flow of pure water having a predetermined temperature formed inside a processing tank. FIG. 9 shows the main configuration of such a substrate processing apparatus. In FIG. 9, the drainage processing unit of pure water overflowing from the substrate processing tank is not shown.
[0003]
The substrate processing apparatus 51 is provided with a substrate processing tank 52 that can accommodate a plurality of substrates, and a hot water supply pipe 53 is connected to the bottom of the substrate processing tank 52 via an opening / closing valve 54. The hot water supply pipe 53 is connected in communication with a hot water supply unit 55, and pure water heated to a predetermined temperature by the hot water supply unit 55 is supplied to the substrate processing tank 52.
[0004]
The hot water supply unit 55 includes a pure water introduction pipe 56 connected to a pure water connection port provided in a pure water supply line installed in the factory, and one end side connected to the pure water introduction pipe 56. A hot water pipe 57 whose end side is connected to the hot water supply pipe 53 and a heater 58 for heating pure water flowing through the hot water pipe 57 are provided. The hot water pipe 57 is provided with a temperature detector 61 for detecting the temperature of pure water heated by the heater 58 on the downstream side of the heater 58. Further, the substrate processing apparatus 51 is provided with a temperature adjusting device 62 for controlling the temperature of the heater 58 so that the temperature of the pure water detected by the temperature detector 61 becomes the substrate processing temperature which is a target temperature.
[0005]
[Problems to be solved by the invention]
Examples of the temperature detector 61 connected to the temperature control device 62 include a detector having high detection sensitivity such as a K thermocouple and a detector having low detection sensitivity compared to the K thermocouple such as a platinum resistor. .
[0006]
FIG. 10 (A) shows a typical example of a temperature waveform when the K thermocouple having a high detection sensitivity is used as a temperature detector and the temperature control device 62 controls the temperature so that the temperature of pure water becomes the substrate processing temperature. In this case, as is clear from the figure, the rise time from the start of temperature adjustment until the substrate processing temperature, which is the target temperature, stabilizes, is short and the temperature can be adjusted with good responsiveness. The control accuracy at temperature is poor, and the temperature waveform has an uneven shape that goes up and down around the target temperature.
[0007]
On the other hand, FIG. 10B shows a typical example of a temperature waveform when temperature control is performed using a platinum resistor having low detection sensitivity as a temperature detector. In this case, as is clear from the figure, the rise time until the pure water stabilizes at the target temperature is long, but the control accuracy after reaching the target temperature is good, and a smooth waveform along the target temperature is obtained. .
[0008]
However, in the conventional substrate processing apparatus, it was not possible to simultaneously perform a rapid rise to the target temperature and highly accurate temperature control. For this reason, when emphasizing the accuracy of temperature control, the rise time to the target temperature becomes long, leading to a decrease in the operation rate of the substrate processing apparatus and an increase in the amount of pure water discharged. On the other hand, if emphasis is placed on shortening the rise time, there is a problem that the temperature control accuracy is lowered, and in turn, the quality and yield of the processed substrate are lowered.
[0009]
Such a problem is not limited to the case where pure water of a predetermined temperature is supplied to the substrate processing tank as described above, but a constant value is set so that the chemical solution reaches the target substrate processing temperature by the temperature detector and the temperature controller. The same applies to various substrate processing apparatuses that control and supply the chemical solution after temperature adjustment to the substrate processing unit to perform substrate processing.
[0010]
The present invention has been made in view of such a problem. In a substrate processing apparatus that performs substrate processing using a processing liquid (including both pure water and chemicals) supplied to a substrate processing unit, the processing liquid is set to a substrate processing temperature. An object of the present invention is to provide a substrate processing apparatus capable of quickly starting up and performing high-precision temperature adjustment after reaching the substrate processing temperature.
[0011]
[Means for Solving the Problems]
According to a first aspect of the present invention, there is provided a substrate processing unit that performs substrate processing with a processing liquid adjusted to a predetermined temperature, and a hot liquid pipe that is connected to the substrate processing unit and supplies a processing liquid adjusted to a predetermined temperature. And a substrate processing apparatus provided with a temperature adjusting means for adjusting the processing liquid flowing in the hot liquid pipe to a predetermined temperature, and having a high detection sensitivity for detecting the temperature of the processing liquid flowing downstream of the temperature adjusting means. A first temperature detector, a second temperature detector having a low detection sensitivity for detecting the temperature of the processing liquid flowing downstream of the temperature adjusting means, and the temperature of the processing liquid detected by the first temperature detector The temperature of the processing solution is detected by the first temperature detector so that the temperature of the processing liquid becomes the substrate processing temperature or the rapid temperature increase temperature when the temperature is lower than the rapid temperature increase temperature set near the substrate processing temperature for processing. Treatment liquid temperature And controlling the temperature adjusting means so that the temperature of the processing liquid detected by the second temperature detector when the temperature of the processing liquid becomes equal to or higher than the rapid temperature rise temperature becomes the substrate processing temperature. And a temperature control unit for controlling the temperature adjusting means based on the temperature of the processing liquid detected by the second temperature detector. The processing liquid refers to various liquids used for substrate processing, and includes not only chemicals used for etching and the like, but also pure water used for cleaning processing.
[0012]
According to this substrate processing apparatus, the temperature controller controls the temperature adjusting means based on the temperature of the processing liquid when the temperature of the processing liquid detected by the first temperature detector is less than the rapid temperature rise temperature, Since the temperature adjusting means is controlled by the temperature of the processing liquid detected by the second temperature detector when the temperature of the processing liquid becomes equal to or higher than the rapid temperature increase temperature, the temperature of the processing liquid will reach the rapid temperature increase temperature. The first temperature detector with high detection sensitivity can be used to quickly raise the treatment liquid to the rapid temperature rise temperature. After the temperature of the treatment liquid reaches the rapid temperature rise temperature, the second temperature with low detection sensitivity. High-precision temperature control can be performed using the detector so that the processing liquid reaches the substrate processing temperature. For this reason, the processing liquid can be quickly raised to the substrate processing temperature, and the operating rate of the substrate processing apparatus can be improved. In addition, after the rise to the substrate processing temperature, a processing liquid whose temperature is adjusted to the substrate processing temperature with high accuracy can be obtained, so that the substrate processing accuracy is improved, and thus the quality and yield of the processed substrate are improved. be able to.
[0013]
According to a second aspect of the present invention, there is provided a substrate processing unit that performs substrate processing with pure water adjusted to a predetermined temperature; a hot liquid pipe that is connected to the substrate processing unit and supplies pure water adjusted to a predetermined temperature; A substrate processing apparatus provided with a heater for heating pure water flowing in the hot liquid pipe, and a first temperature detector with high detection sensitivity for detecting the temperature of pure water flowing downstream of the heater; A second temperature detector having low detection sensitivity for detecting the temperature of pure water flowing downstream of the heater, and a substrate processing temperature at which the temperature of the pure water detected by the first temperature detector performs substrate processing or the substrate A first temperature controller for outputting a first heater control signal for controlling the heater so as to reach a rapid temperature rise set to a temperature close to the processing temperature; and pure water detected by the second temperature detector Temperature is the substrate processing temperature A second temperature controller for outputting a second heater control signal for controlling the heater so that the temperature of pure water detected by the first temperature detector is lower than the rapid temperature rise temperature. The heater is controlled based on the first heater control signal output from the temperature controller, and the second output from the second temperature controller when the temperature of the pure water exceeds the rapid temperature rise temperature. A selection control unit for controlling the heater based on a heater control signal is provided.
[0014]
According to this substrate processing apparatus, the heater is controlled by the first heater control signal output from the first temperature controller when the temperature of the pure water detected by the first temperature detector is lower than the rapid temperature rise temperature by the selection control unit. On the other hand, when the temperature of the pure water becomes equal to or higher than the rapid temperature rise temperature, the heater is controlled by the second heater control signal output from the second temperature controller. Until the temperature reaches the temperature, the first temperature detector having high detection sensitivity can be used to quickly raise the temperature of the pure water to the rapid temperature rise temperature. After the temperature of the pure water reaches the rapid temperature rise temperature, High-precision temperature control can be performed using the second temperature detector with low detection sensitivity so that pure water becomes the substrate processing temperature. For this reason, the pure water can be quickly raised to the substrate processing temperature, the operating rate of the substrate processing apparatus can be improved, and expensive pure water discharged from the substrate processing section before the startup is started. Consumption can be reduced. In addition, after the rise to the substrate processing temperature, pure water having a temperature precisely adjusted to the substrate processing temperature is obtained, so that the substrate processing accuracy is improved, and in turn, the quality and yield of the processed substrate are improved. be able to. In addition, since the first and second temperature controllers are provided corresponding to the first and second temperature detectors, respectively, the optimum temperature controller corresponding to the detection signal form of each temperature detector is supplied to the market. It can be selected and used arbitrarily from the existing one, and the equipment cost can be reduced.
[0015]
The invention according to claim 3 communicates with the substrate processing section that performs substrate processing with pure water adjusted to a predetermined temperature, a high-temperature water pipe through which high-temperature pure water flows, and a pure water introduction pipe through which low-temperature pure water flows. A hot liquid pipe connected to the substrate processing unit for pure water mixed and mixed with the high temperature pure water and the low temperature pure water; and a flow rate of the high temperature pure water flowing from the high temperature water pipe into the hot liquid pipe And a flow rate ratio adjusting means for adjusting a rate of the flow rate of the low-temperature pure water flowing from the pure water introduction pipe into the hot liquid pipe, wherein the high-temperature pure water and the low-temperature pure water A first temperature detector having a high detection sensitivity for detecting the temperature of pure water after mixing with pure water, and a detection sensitivity for detecting the temperature of pure water after mixing the high temperature pure water and the low temperature pure water. A low second temperature detector and the temperature of pure water detected by the first temperature detector perform substrate processing. A first temperature controller that outputs a first flow rate ratio control signal for controlling the flow rate ratio adjusting means so as to reach a rapid temperature rise temperature set to a plate processing temperature or a temperature in the vicinity of the substrate processing temperature; A second temperature controller for outputting a second flow rate control signal for controlling the flow rate adjusting means so that the temperature of the pure water detected by the temperature detector becomes the substrate processing temperature; and the first temperature detector. And controlling the flow rate ratio adjusting means based on the first flow rate control signal output from the first temperature controller when the temperature of the pure water detected by the temperature is less than the rapid temperature rise temperature, A selection control unit that controls the flow rate ratio adjusting means based on a second flow rate ratio control signal output from the second temperature regulator when the temperature becomes equal to or higher than the rapid temperature rise temperature is provided.
[0016]
According to this substrate processing apparatus, when the temperature of pure water detected by the first temperature detector is lower than the rapid temperature rise temperature by the selection control unit, the first flow rate control signal output from the first temperature controller is used. Since the flow rate adjusting means is controlled, on the other hand, the flow rate adjusting means is controlled by the second flow rate control signal output from the second temperature controller when the temperature of the pure water becomes higher than the rapid temperature rise temperature. Until the temperature of the pure water reaches the rapid temperature rise temperature, the temperature of the pure water can be rapidly raised to the rapid temperature rise temperature by using the first temperature detector with high detection sensitivity. After reaching the temperature increase temperature, it is possible to perform highly accurate temperature control using the second temperature detector having low detection sensitivity so that the pure water becomes the substrate processing temperature. For this reason, the pure water can be quickly raised to the substrate processing temperature, the operating rate of the substrate processing apparatus can be improved, and expensive pure water discharged from the substrate processing section before the startup is started. Consumption can be reduced. In addition, after the rise to the substrate processing temperature, pure water having a temperature precisely adjusted to the substrate processing temperature is obtained, so that the substrate processing accuracy is improved, and in turn, the quality and yield of the processed substrate are improved. be able to. In addition, since the first and second temperature controllers are provided corresponding to the first and second temperature detectors, respectively, the optimum temperature controller corresponding to the detection signal form of each temperature detector is supplied to the market. It can be selected and used arbitrarily from the existing one, and the equipment cost can be reduced.
[0017]
According to a fourth aspect of the present invention, there is provided a substrate processing unit that performs substrate processing by immersing a substrate in a processing solution, and a circulating hot liquid tube that circulates and supplies the processing solution overflowed from the substrate processing unit to the substrate processing unit. And a substrate processing apparatus provided with a heater for heating the processing liquid flowing in the circulating hot liquid pipe, the first temperature detector having high detection sensitivity for detecting the temperature of the processing liquid, A second temperature detector having a low detection sensitivity for detecting the temperature, and a temperature of the processing liquid detected by the first temperature detector is set to a substrate processing temperature at which the substrate processing is performed or a temperature in the vicinity of the substrate processing temperature. A first temperature controller that outputs a first heater control signal for controlling the heater so that the temperature rises, and a temperature of the processing liquid detected by the second temperature detector becomes the substrate processing temperature. The heater A second temperature controller for outputting a second heater control signal to be controlled; and a temperature of the processing liquid detected by the first temperature detector is output from the first temperature controller when the temperature is lower than the rapid temperature rise temperature. The heater is controlled based on the first heater control signal, and based on the second heater control signal output from the second temperature controller when the temperature of the processing liquid becomes equal to or higher than the rapid temperature rise temperature. A selection control unit for controlling the heater is provided.
[0018]
According to this substrate processing apparatus, the heater is generated by the first heater control signal output from the first temperature controller when the temperature of the processing liquid detected by the first temperature detector is lower than the rapid temperature rise temperature by the temperature controller. On the other hand, when the temperature of the processing liquid becomes equal to or higher than the rapid temperature rise temperature, the heater is controlled by the second heater control signal output from the second temperature controller, so that the temperature of the processing liquid rapidly increases. Until the temperature reaches the temperature, the processing liquid can be quickly raised to the rapid temperature rise using the first temperature detector with high detection sensitivity. After the temperature of the treatment liquid reaches the rapid temperature rise, High-precision temperature control can be performed using the second temperature detector with low detection sensitivity so that the processing liquid reaches the substrate processing temperature. For this reason, the processing liquid can be quickly raised to the substrate processing temperature, and the operating rate of the substrate processing apparatus can be improved. In addition, after the rise to the substrate processing temperature, a processing liquid whose temperature is adjusted to the substrate processing temperature with high accuracy can be obtained, so that the substrate processing accuracy is improved, and thus the quality and yield of the processed substrate are improved. be able to. In addition, when using a chemical solution for etching as a processing solution, the amount of processing solution volatilization that occurs when the processing solution exceeds the substrate processing temperature can be suppressed, reducing the amount of processing solution consumption that occurs during prolonged circulation use. Can be planned. Moreover, the optimal temperature controller corresponding to the detection signal form of each temperature detector can be arbitrarily selected from those supplied to the market, and the equipment cost can be reduced.
[0019]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings.
FIG. 1 is a schematic diagram showing a configuration of a main part of a substrate processing apparatus 1 according to the first embodiment of the present invention. In FIG. 1, a drainage processing unit of pure water overflowing from the substrate processing tank 2 is not shown. .
[0020]
The substrate processing apparatus 1 is provided at the bottom of the substrate processing tank 2 for storing a plurality of substrates and performing a cleaning process on the substrate while overflowing pure water supplied into the tank. A hot water supply pipe 3 connected to the processing liquid supply port via the open / close valve 4 and supplying pure water adjusted to a predetermined temperature into the substrate processing tank 2 from the processing liquid supply port, and a predetermined supply to the hot water supply pipe 3 There is provided a hot water supply section 5 for supplying pure water whose temperature is adjusted.
[0021]
The hot water supply unit 5 includes a pure water introduction pipe 6 that communicates with a pure water coupling port (pure water supply source) provided in a primary pipe installed in the factory, and one end side of the hot water supply section 5 is connected to the pure water introduction pipe 6. The hot liquid pipe is provided with a hot liquid pipe 7 connected to the other end and connected to the hot water supply pipe 3, and a heater 8 attached to the hot liquid pipe 7 for heating pure water flowing in the pipe. 7 includes a first temperature detector 11 having a high detection sensitivity, such as a K thermocouple, and a second temperature detector having a low detection sensitivity, such as a platinum resistor, for detecting the temperature of pure water downstream of the heater 8. 12 is attached.
[0022]
In addition, the substrate processing apparatus 1 is provided with a temperature control unit 20 that controls the temperature of pure water flowing in the hot liquid pipe 7 using the first and second temperature detectors 11 and 12, the heater 8, and the like. ing. As shown in FIG. 2, the temperature controller 20 includes input means such as the first and second temperature detectors 11 and 12 as input devices, a keyboard for inputting various information related to the temperature control of pure water, and switches. 21 is connected. The heater 8 is connected as an output device. The information input by the input means 21 defines a substrate processing temperature WT that is the temperature of pure water that performs substrate processing (cleaning), and a rapid temperature increase temperature QT that is set in the vicinity of the substrate processing temperature WT. There is a temperature difference P (P = WT−QT) between the substrate processing temperature WT and the rapid temperature rise temperature QT.
[0023]
The temperature control unit 20 is connected to the input means 21, and includes a control computer 23 having a CPU, a memory, and an input / output interface, and the temperature of pure water detected by the first temperature detector 11 is controlled by the control computer 23. A first temperature controller 24 that outputs a first heater control signal for controlling the heater 8 so that the substrate processing temperature WT is set through the input, and pure water detected by the second temperature detector 12. In accordance with a second temperature controller 25 for outputting a second heater control signal for controlling the heater 8 so that the temperature becomes the substrate processing temperature WT input and set via the control computer 23, and the temperature control program to be described later. Heater power to which one of the first heater control signal and the second heater control signal is input via the control computer 23 And a Seiki 26, the temperature control program is stored in the memory of the control computer 23. The control computer 23 corresponds to the selection control unit of the present invention.
[0024]
The substrate processing tank 2 is supplied with pure water whose temperature has been adjusted to a predetermined temperature by the temperature control unit 20 from the hot water supply unit 5 by opening the on-off valve 4 provided in the hot water supply pipe 3. Here, temperature control by the control computer 23 will be described with reference to FIG.
[0025]
First, by the operation of the input means 21 by the operator, the substrate processing (cleaning) information, that is, the substrate processing temperature WT, and the temperature difference P between the substrate processing temperature WT and the rapid temperature rising temperature QT are input to the control computer 23. Information is stored in the memory (S1).
[0026]
Next, the control computer 23 calculates a rapid temperature rise temperature QT (QT = WT−P) from the substrate processing temperature WT and the temperature difference P, stores the QT in a memory, and sets the substrate processing temperature WT to the first temperature. 1. Output to the second temperature controller 24, 25 (S2).
[0027]
The first temperature controller 24 to which the substrate processing temperature WT is input is set, and the heater is used so that the temperature T1 of pure water detected from the first temperature detector 11 becomes the substrate processing temperature WT using the WT as a target temperature. The first heater control signal for controlling 8 and the T1 are output to the control computer 23. On the other hand, the second temperature controller 25 to which the substrate processing temperature WT is input is also set so that the temperature T2 of pure water detected from the second temperature detector 12 becomes the substrate processing temperature WT using this WT as a target temperature. A second heater control signal for controlling the heater 8 is output to the control computer 23. The T1, first heater control signal, and second heater control signal are input to the control computer 23 and temporarily stored in a memory (S3).
[0028]
The control computer 23 to which the pure water temperature T1 has been input compares the pure water temperature T1 with the rapid temperature rise temperature QT (step S4). When T1 <QT, the first heater control signal is sent to the heater power adjuster 26. (S5), the heater power adjuster 26 is controlled by the first heater control signal, and the output of the heater 8 is adjusted so that T1 becomes WT. On the other hand, when T1 ≧ QT, the second heater control signal is output to the heater power regulator 26 (S6), the heater power regulator 26 is controlled by the second heater control signal, and T2 becomes the substrate processing temperature WT. The output of the heater 8 is adjusted so that
[0029]
That is, as shown in FIG. 8, until the pure water temperature T1 reaches the rapid temperature rise temperature QT, the first temperature detector 11 having high detection sensitivity and the first temperature optimum for temperature control using the detector 11 are used. Since the heater 8 is controlled using the temperature controller 24, the pure water can be rapidly heated to the rapid temperature rise temperature QT. After reaching QT, the heater 8 is controlled using the second temperature detector 12 having a low detection sensitivity and the second temperature controller 25 that is optimal for signal processing of the detector 12, so that the substrate processing temperature WT It is possible to obtain a pure water temperature that is highly accurate. Accordingly, since the rise time up to the substrate processing temperature WT can be shortened, the operation rate of the substrate processing apparatus can be improved, and wasteful discharge of pure water up to the rise time can be reduced. In addition, since the pure water temperature is adjusted to the substrate processing temperature WT with high accuracy after the substrate processing temperature WT is reached, the quality of the processed substrate can be improved and the yield can be improved by making the substrate processing uniform. Moreover, the optimal temperature controller corresponding to the detection signal form of each temperature detector can be arbitrarily selected from those supplied to the market, and the equipment cost can be reduced.
[0030]
In the embodiment, the first heater control signal and the second heater control signal are output from the first temperature controller 24 and the second temperature controller 25 to the control computer 23, and either heater control is performed under a predetermined condition. The signal is output from the control computer 23 to the heater power regulator 26, but the first heater control signal and the second heater control signal from the first temperature regulator 24 and the second temperature regulator 25 are directly input, A signal selector that outputs one of the control signals to the heater power adjuster 26 in accordance with a selection command from the control computer 23 may be provided. Note that this control method using the signal selector can be similarly applied to temperature control of a second embodiment described later. In this case, the first and second heater control signals correspond to the first and second flow rate control signals, and the heater power regulator corresponds to the operation signal distributor.
[0031]
FIG. 4 is a schematic diagram showing a main configuration of a substrate processing apparatus 1A according to the second embodiment of the present invention, and FIG. 5 is a functional block diagram of the temperature control unit 20A. In these drawings, portions having the same configurations as those of the substrate processing apparatus shown in FIGS. 1 and 2 are denoted by the same reference numerals, description thereof will be simplified or omitted, and different configurations will be mainly described. In FIG. 4, the drainage treatment unit of pure water overflowing from the substrate processing tank 2 is not shown.
[0032]
The hot water supply unit 5A provided in the substrate processing apparatus 1A is connected to a pure water supply source, and is connected to a pure water introduction pipe 32 through which low temperature (room temperature) pure water flows, and to the pure water introduction pipe 32. The high-temperature water pipe 31 provided with a heater 30 for heating pure water flowing through the pure water branch pipe 29 to a certain temperature higher than the substrate processing temperature, the pure water introduction pipe 32 and the high-temperature water pipe 31. And a hot liquid pipe 7 </ b> A for supplying the hot water supply pipe 3 with pure water obtained by joining and mixing the low-temperature pure water and the high-temperature pure water. A high-temperature flow rate adjustment valve 33 is provided downstream of the heater 30 of the high-temperature water pipe 31, and a low-temperature flow rate adjustment valve 34 is provided downstream of the pure water branch pipe 29 of the pure water introduction pipe 32. Has been. Similarly to the first embodiment, the warm liquid pipe 7A includes a first temperature detector with high detection sensitivity, such as a K thermocouple, which detects the temperature of the pure water after flowing in the warm liquid pipe 7A. And the 2nd temperature detector with low detection sensitivity like a platinum resistor is attached. The high temperature flow rate adjusting valve 33 and the low temperature flow rate adjusting valve 34 correspond to the flow rate ratio adjusting means of the present invention.
[0033]
The temperature control unit 20A has basically the same configuration as the temperature control unit 20 of the first embodiment, but the output targets are the high-temperature flow rate adjustment valve 33 and the low-temperature flow rate adjustment valve 34. As shown in FIG. 4, the flow rate adjusting valves 33 and 34 are controlled so that the temperature T1 of pure water detected by the first temperature detector 11 becomes the substrate processing temperature WT input and set via the control computer 23. A first temperature controller 24A that outputs a first flow rate ratio control signal, and a substrate processing temperature WT that is input and set via the control computer 23 with a temperature T2 of pure water detected by the second temperature detector 12. A second temperature controller 25A for outputting a second flow rate control signal for controlling the flow rate adjusting valves 33 and 34, and the first flow rate control selected according to the temperature control program. One signal or the second flow rate control signal and an operation signal distributor 36 which is input through the control computer 23. The operation signal distributor 36 outputs a valve operation signal for controlling the opening degree of each of the flow rate adjusting valves 33 and 34 to the flow rate adjusting valves 33 and 34 so as to obtain a predetermined temperature based on the flow rate control signal. To do.
[0034]
Also in this embodiment, until the pure water temperature T1 reaches the rapid temperature rise temperature QT, the first temperature detector 11 having high detection sensitivity and the first temperature controller optimal for temperature control using the detector 11 are used. Since the flow rate adjusting valves 33 and 34 are controlled using 24A, it is possible to rapidly raise the temperature of the pure water to the rapid temperature rise temperature QT. After reaching QT, the flow rate adjusting valves 33 and 34 are controlled using the second temperature detector 12 having a low detection sensitivity and the second temperature controller 25 that is optimal for the signal processing of the detector 12. It is possible to obtain a pure water temperature that follows the processing temperature WT with high accuracy. Moreover, the optimal temperature controller corresponding to the detection signal form of each temperature detector can be arbitrarily selected from those supplied to the market, and the equipment cost can be reduced.
[0035]
In the above-described embodiment, pure water is introduced from the pure water introduction pipe 32 to the high temperature water pipe 31 through the pure water branch pipe 29. However, a pure water supply line heated to a predetermined temperature in the factory is used. 6, the heated pure water supply source and the high temperature water pipe 31 may be directly connected via the heated pure water introduction pipe 38 as shown in FIG. In this case, the heater 30 may be used when the heated pure water is lower than the substrate processing temperature, and is not necessarily required when the heated pure water is higher than the substrate processing temperature.
[0036]
In the above embodiment, the high-temperature flow rate adjustment valve 33 and the low-temperature flow rate adjustment valve 34 are used as the flow rate adjustment means. However, the high-temperature water pipe 31 and the pure water introduction pipe 32 are joined and connected to the hot liquid pipe 7A. Alternatively, one flow rate adjusting valve having two inlets to which the high temperature water pipe 31 and the pure water introduction pipe 32 are connected and having one outlet to which the hot liquid pipe 7A is connected may be used. In this type of flow rate adjusting valve, the flow rate ratio of the two liquids flowing in is determined by the rotation angle of the valve, so that the operation signal distributor 36 is unnecessary. Also in the above-described embodiment, the operation signal distributor 36 is not necessarily required, and the control computer 23 may output a valve operation signal to the flow rate adjusting valves 33 and 34.
[0037]
FIG. 7 is a schematic diagram showing a main part configuration of a substrate processing apparatus 1B according to the third embodiment of the present invention. In the figure, parts having the same configuration as the substrate processing apparatus shown in FIG. It is attached.
[0038]
The substrate processing apparatus 1B includes a substrate processing tank 2B that performs substrate processing by immersing a substrate in a processing liquid, a recovery tank 41 that recovers a processing liquid that has overflowed from the substrate processing tank 2B, and a recovery tank 41 that collects the processing liquid. A circulating hot liquid pipe 42 that sucks the processed liquid and supplies it to the substrate processing tank 2B. The circulating hot liquid pipe 42 is provided with a circulation pump 43, a heater 8 for heating the processing liquid flowing in the pipe, and a filter 44 in the same order along the direction in which the processing liquid flows. Further, in the substrate processing tank 2B, as in the first embodiment, the temperature of the processing liquid in the tank is detected, such as a first temperature detector 11 having a high detection sensitivity such as a K thermocouple and a platinum resistor. A second temperature detector 12 having a low detection sensitivity is attached. The processing liquid is supplied to the substrate processing tank 2B from a processing liquid supply pipe (not shown), circulated and used for a predetermined time, and then discharged from a waste liquid pipe 46 provided with an on-off valve 45.
[0039]
This substrate processing apparatus 1B is also provided with a temperature control unit 20 that controls the processing liquid flowing through the circulating hot liquid pipe 42 to a predetermined temperature. This temperature control unit has the same configuration as that of the first embodiment. Since there is, description is abbreviate | omitted. However, with respect to the processing liquid for performing the substrate processing, pure water is used in the first embodiment, and a chemical liquid is mainly used in the present embodiment.
[0040]
Also in this embodiment, until the temperature T1 of the processing liquid in the substrate processing tank 1 reaches the rapid temperature rise temperature QT, the first temperature detector 11 with high detection sensitivity and the temperature control using this detector 11 are used. Since the heater 8 is controlled using the optimum first temperature controller 24, the processing liquid can be rapidly heated to the rapid temperature rise temperature QT. After reaching QT, the heater 8 is controlled using the second temperature detector 12 having a low detection sensitivity and the second temperature controller 25 optimal for signal processing of the detector 12, so that the substrate processing temperature WT is set. It is possible to obtain a processing solution temperature that follows high accuracy. Accordingly, since the rise time to the substrate processing temperature WT can be shortened, the operating rate of the substrate processing apparatus can be improved. Further, after reaching the substrate processing temperature WT, the processing liquid temperature is adjusted to the substrate processing temperature WT with high accuracy, so that the processing substrate quality can be improved and the yield can be improved by uniform processing of the substrate. In addition, when using a chemical solution for etching as a processing solution, the amount of processing solution volatilization that occurs when the processing solution exceeds the substrate processing temperature can be suppressed, reducing the amount of processing solution consumption that occurs during prolonged circulation use. Can be planned. Moreover, the optimal temperature controller corresponding to the detection signal form of each temperature detector can be arbitrarily selected from those supplied to the market, and the equipment cost can be reduced.
[0041]
In the first to third embodiments, the temperature difference P from the substrate processing temperature WT is adopted as the rapid temperature rise temperature information for defining the rapid temperature rise temperature QT. However, the rapid temperature rise temperature QT itself may be used as the temperature information. Good. These target temperatures are input and set to the first temperature controller and the second temperature controller via the control computer 23. However, the temperature information is directly input to the first and second temperature controllers. May be. In this case, only the rapid temperature rise temperature QT may be input to the control computer 23 from the input means 21. Further, the processing liquid temperature signal detected by the first temperature detector 11 may be directly input to the control computer 23 without going through the first temperature controller. In addition, the target temperature set in the first temperature controller is not limited to the substrate processing temperature WT as in the above-described embodiment, but may be a rapid temperature rise temperature QT. The QT may be set higher than the WT. it can.
[0042]
Moreover, in the said 1st-3rd embodiment, the substrate processing tank 2,2A which performs a substrate process collectively by immersing a several board | substrate in a process liquid (a pure water is included) as a substrate processing part. Although the example of 2B was shown, the substrate processing tank may process one substrate. Further, the substrate processing unit is not limited to such a substrate processing tank, and for example, a substrate processing may be performed by supplying various processing liquids to the substrate surface while rotating one substrate. The heater 8 and the flow rate adjusting valves 33 and 34 in the first to third embodiments correspond to the temperature adjusting means according to the first aspect of the invention.
[0043]
【The invention's effect】
According to the substrate processing apparatus of the present invention, the temperature of the processing liquid (including pure water) is detected using the first temperature detector having a high detection sensitivity and the second temperature detector having a low detection sensitivity. Until the temperature of the substrate reaches a rapid temperature rise temperature in the vicinity of the substrate processing temperature at which the substrate processing is performed, the first temperature detector is used to control the temperature so that the processing liquid reaches the rapid temperature rise temperature. Since the temperature control is performed using the second temperature detector so that the processing liquid reaches the substrate processing temperature, the processing liquid can be quickly raised to the substrate processing temperature for performing the substrate processing. The operating rate of the apparatus can be improved and the temperature of the processing liquid can be adjusted to the substrate processing temperature with high accuracy after rising to the substrate processing temperature, so that the quality and yield can be improved by improving the substrate processing accuracy. .
[Brief description of the drawings]
FIG. 1 is a schematic view showing a main configuration of a substrate processing apparatus according to a first embodiment.
FIG. 2 is a functional block diagram of a temperature control unit in the first embodiment.
FIG. 3 is a flowchart showing a temperature control procedure.
FIG. 4 is a schematic diagram showing a main configuration of a substrate processing apparatus according to a second embodiment.
FIG. 5 is a functional block diagram of a temperature control unit in the second embodiment.
FIG. 6 is a schematic diagram showing a configuration of main parts of a substrate processing apparatus showing a modification of the second embodiment.
FIG. 7 is a schematic view showing a main configuration of a substrate processing apparatus according to a third embodiment.
FIG. 8 is a temperature waveform diagram showing a temperature adjustment result by a temperature control unit according to the present invention.
FIG. 9 is a schematic diagram showing a main configuration of a conventional substrate processing apparatus.
FIG. 10 is a temperature waveform diagram when temperature is controlled using a temperature detector with high detection sensitivity (A) and when temperature control is performed using a temperature detector with low detection sensitivity (B).
[Explanation of symbols]
1, 1A, 1B substrate processing equipment
2, 2B Substrate processing tank
7, 7A Hot liquid tube
8 Heater
11 First temperature detector
12 Second temperature detector
20, 20A Temperature controller
23 Control computer
24, 24A first temperature controller
25, 25A second temperature controller
31 Hot water pipe
32 Pure water introduction pipe
33 High-temperature flow control valve
34 Low-temperature flow control valve
42 Circulating hot liquid tube

Claims (4)

A substrate processing unit for performing substrate processing with a processing liquid adjusted to a predetermined temperature;
A hot liquid pipe connected to the substrate processing unit and supplying a processing liquid adjusted to a predetermined temperature;
A substrate processing apparatus provided with a temperature adjusting means for adjusting a processing liquid flowing in the hot liquid pipe to a predetermined temperature;
A first temperature detector with high detection sensitivity for detecting the temperature of the processing liquid flowing downstream of the temperature adjusting means;
A second temperature detector with low detection sensitivity for detecting the temperature of the processing liquid flowing downstream of the temperature adjusting means;
When the temperature of the processing liquid detected by the first temperature detector is less than the rapid temperature increase temperature set near the substrate processing temperature for performing substrate processing, the temperature of the processing liquid is the substrate processing temperature or the rapid temperature. The temperature adjusting means is controlled based on the temperature of the processing liquid detected by the first temperature detector so that the temperature rises, and the temperature of the processing liquid becomes equal to or higher than the rapid temperature rising temperature. A temperature control unit for controlling the temperature adjusting means based on the temperature of the processing liquid detected by the second temperature detector so that the temperature of the processing liquid detected by the second temperature detector becomes the substrate processing temperature; Provided substrate processing apparatus. A substrate processing unit that performs substrate processing with pure water adjusted to a predetermined temperature;
A hot liquid pipe connected to the substrate processing unit and supplying pure water adjusted to a predetermined temperature;
A substrate processing apparatus provided with a heater for heating pure water flowing in the hot liquid pipe,
A first temperature detector with high detection sensitivity for detecting the temperature of pure water flowing downstream of the heater;
A second temperature detector having a low detection sensitivity for detecting the temperature of pure water flowing downstream of the heater;
A first heater that controls the heater so that the temperature of pure water detected by the first temperature detector becomes a substrate processing temperature for performing substrate processing or a rapid temperature rise set to a temperature close to the substrate processing temperature. A first temperature controller for outputting a control signal;
A second temperature controller for outputting a second heater control signal for controlling the heater so that the temperature of pure water detected by the second temperature detector becomes the substrate processing temperature;
When the temperature of pure water detected by the first temperature detector is lower than the rapid temperature rise temperature, the heater is controlled based on a first heater control signal output from the first temperature controller, and the pure water The substrate processing apparatus provided with the selection control part which controls the said heater based on the 2nd heater control signal output from the said 2nd temperature regulator, when the temperature of water becomes more than the said rapid temperature rising temperature. A substrate processing unit that performs substrate processing with pure water adjusted to a predetermined temperature;
Connected to a high-temperature water pipe through which high-temperature pure water flows and a pure water introduction pipe through which low-temperature pure water flows, and supplies pure water in which the high-temperature pure water and low-temperature pure water are mixed and mixed to the substrate processing unit. A hot liquid tube,
A flow rate ratio adjusting means for adjusting a ratio between a flow rate of high-temperature pure water flowing from the high-temperature water pipe into the hot liquid pipe and a flow rate of low-temperature pure water flowing from the pure water introduction pipe to the hot liquid pipe; A substrate processing apparatus, comprising:
A first temperature detector with high detection sensitivity for detecting the temperature of pure water after mixing the high-temperature pure water and the low-temperature pure water;
A second temperature detector having low detection sensitivity for detecting the temperature of pure water after mixing the high-temperature pure water and the low-temperature pure water;
The flow rate ratio adjusting means is controlled so that the temperature of pure water detected by the first temperature detector becomes a substrate processing temperature for performing substrate processing or a rapid temperature rising temperature set to a temperature near the substrate processing temperature. A first temperature controller for outputting a first flow rate ratio control signal;
A second temperature controller that outputs a second flow rate ratio control signal for controlling the flow rate ratio adjusting means so that the temperature of pure water detected by the second temperature detector becomes the substrate processing temperature;
The flow rate ratio adjusting means is controlled based on a first flow rate control signal output from the first temperature controller when the temperature of pure water detected by the first temperature detector is lower than the rapid temperature rise temperature. And a selection control unit for controlling the flow rate ratio adjusting means based on a second flow rate control signal output from the second temperature controller when the temperature of the pure water is equal to or higher than the rapid temperature rise temperature. Provided substrate processing apparatus. A substrate processing unit that performs substrate processing by immersing the substrate in a processing solution;
A circulating hot liquid tube that circulates and supplies the processing liquid overflowed from the substrate processing unit to the substrate processing unit;
A substrate processing apparatus provided with a heater for heating the processing liquid flowing in the circulating hot liquid pipe;
A first temperature detector with high detection sensitivity for detecting the temperature of the treatment liquid;
A second temperature detector having a low detection sensitivity for detecting the temperature of the treatment liquid;
A first heater that controls the heater so that the temperature of the processing liquid detected by the first temperature detector becomes a substrate processing temperature for performing substrate processing or a rapid temperature increase set to a temperature in the vicinity of the substrate processing temperature. A first temperature controller for outputting a control signal;
A second temperature controller for outputting a second heater control signal for controlling the heater so that the temperature of the processing liquid detected by the second temperature detector becomes the substrate processing temperature;
Controlling the heater based on a first heater control signal output from the first temperature controller when the temperature of the processing liquid detected by the first temperature detector is lower than the rapid temperature rise temperature; A substrate processing apparatus comprising a selection control unit for controlling the heater based on a second heater control signal output from the second temperature controller when the temperature of the liquid becomes equal to or higher than the rapid temperature rise temperature.

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