JP3737446B2 - Microwave high power amplifier circuit - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a microwave high-power amplifier circuit that makes it difficult for the RF characteristics of a microwave amplifier circuit to change due to the influence of an internal electric field, and that can be mounted close to a detection monitor circuit and a temperature monitor circuit.
[0002]
[Prior art]
FIG. 7 is a perspective view showing an example of a conventional microwave amplifier circuit. In FIG. 7, 1 is a transistor, 2 is a dielectric substrate, 5 is a high frequency chip capacitor for DC cut, and 6 is A bias chip capacitor, 7 is an RF terminator, and 15 is an interdigital type distribution and synthesis circuit. For example, a case surface formed by connecting a transistor 1, a dielectric substrate 2, a DC cut high frequency chip capacitor 5, a bias chip capacitor 6, an RF terminator 7, and an interdigital distribution / synthesis circuit 15. The microwave amplifying circuit is configured as a whole.
[0003]
FIG. 8 is a cross-sectional view showing an example of a conventional microwave amplifier circuit. In FIG. 8, 3 is a case, 9 is a cover, and 20 is a large-capacity capacitor.
[0004]
Next, the operation will be described.
As shown in FIG. 8, a large-capacitance capacitor 20 is connected between the collector and GND (or between the drain and GND or between the emitter and GND). A large-capacitance capacitor 20 is connected to the transistor 1 in order to reduce the delay in the rise time of the current.
[0005]
As shown in FIG. 8, in the conventional microwave high power amplifier circuit, a large-capacitance capacitor 20 is directly soldered between a bias and a GND, and is easily affected by an internal electric field. The RF characteristics change depending on the mounting position. Further, since the detection monitor circuit and the temperature monitor circuit are affected by RF, a shield is required and it is difficult to mount them nearby.
[0006]
[Problems to be solved by the invention]
Since the conventional microwave high power amplifier circuit is configured as described above, there are problems that the RF characteristics change and that it is difficult to mount a detection monitor circuit and a temperature monitor circuit nearby.
[0007]
The present invention has been made to solve the above-mentioned problems, and makes it difficult for the RF characteristics of the microwave amplifier circuit to change due to the influence of the internal electric field, and the detection monitor circuit and the temperature monitor circuit can be mounted in the vicinity. An object is to obtain a microwave high power amplifier circuit.
[0008]
[Means for Solving the Problems]
A microwave high power amplifier circuit according to the present invention includes a lower conductor layer having a GND pattern formed on the entire surface, an upper conductor layer in which a capacitor bank is disposed, a lower conductor layer, and an upper conductor layer. A multilayer substrate having an electrically insulating dielectric layer, a cover and a case for accommodating the multilayer substrate and forming two spaces divided by the multilayer substrate, and an amplification provided in a lower space of the multilayer substrate And a transistor which is an element .
[0011]
The microwave high power amplifier circuit according to the present invention further includes a metal post connected to the GND at a quarter wavelength position in the case.
[0012]
In the microwave high power amplifier circuit according to the present invention, a temperature monitor sensor is mounted on an upper conductor layer and fastened together with a metal post.
[0013]
DETAILED DESCRIPTION OF THE INVENTION
An embodiment of the present invention will be described below.
Embodiment 1 FIG.
FIG. 1 is a cross-sectional view showing a first embodiment of a microwave amplifier circuit according to the present invention. In FIG. 1, 1 is a transistor, 2 is a dielectric substrate, 3 is a case, 4 is a capacitor, 8 is a multilayer substrate, 9 is a cover, and 10 is a lead wire. The capacitor 4 is mounted on the multilayer substrate 8. The lead wire 10 connects the multilayer substrate 8 and the dielectric substrate 2 having the bias pattern of the transistor 1.
[0014]
FIG. 2 is a perspective view showing a multilayer substrate portion of Embodiment 1 of the microwave amplifier circuit according to the present invention. In FIG. 2, 12 is a through hole. A through hole 12 is provided in a portion of the multilayer substrate 8 that contacts the case 3 and is dropped to GND.
[0015]
FIG. 3 is a cross-sectional view showing the layer structure of the multilayer substrate 8 of the first embodiment of the microwave amplifier circuit according to the present invention. In FIG. 3, 13a to 13d are conductor layers, and 14a to 14c are dielectric layers. The first conductor layer 13a has a pattern of V _d1, V _d2, and GND (or SG: Signal Ground). The second conductor layer 13b has a GND pattern (including a through hole corresponding to V _d2 ). The third conductor layer 13c has a pattern of V _d2 (or SG). The fourth conductor layer 13d has a GND pattern on the entire surface. The voltage and current are connected to the pattern of the dielectric substrate 2 through the lead wire 10 and supplied to the transistor 1.
[0016]
In addition to the formation of two spaces that are electrically divided (insulated) by the GND on the entire lower surface of the multilayer substrate 8 (fourth conductor layer 13d), foreign matter is generated in the space above the transistor 1. Since it does not exist, it is possible to create a mounting state that is hardly affected by RF. Also, the V _d2 (or SG) pattern formed on the third conductor layer 13c is the GND pattern formed on the second conductor layer 13b and the GND pattern on the entire surface of the fourth conductor layer 13d. Therefore, the V _d2 pattern through which a large current flows can be thickened, and the L component (inductance) can be reduced.
[0017]
As described above, the microwave high-power amplifier circuit according to the first embodiment includes the lower conductor layer 13d having the GND pattern formed on the entire surface, the upper conductor layer 13a on which the capacitor 4 is disposed, and the lower layer conductor layer 13a. A multilayer substrate 8 having dielectric layers 14a to 14c that electrically insulate the conductor layer 13d from the upper conductor layer 13a, and two spaces that accommodate the multilayer substrate 8 and are divided by the multilayer substrate 8 are formed. The cover 9 and the case 3 are provided.
[0018]
As described above, according to the first embodiment, since the inside of the case is divided into the upper and lower spaces using the GND surface of the multilayer substrate 8, the lower circuit elements can be hardly affected by the upper portion. Thus, the effect of reducing variation in the RF characteristics of the microwave amplifier circuit can be obtained.
[0019]
Embodiment 2. FIG.
FIG. 4 is a plan view showing the second and third embodiments of the microwave amplifier circuit according to the present invention. In FIG. 4, 16 is a temperature monitor circuit, 17 is a detection monitor circuit, and 18 is a capacitor. The bank corresponds to the configuration of the portion surrounded by the through hole 12 of the first embodiment shown in FIG. The multilayer substrate 8 is provided with a temperature monitor circuit 16 in addition to the capacitor bank 18.
[0020]
In the second embodiment, a temperature monitor circuit 16 is added to the microwave amplifier circuit of the first embodiment.
[0021]
Next, the operation will be described.
The microwave amplifier circuit according to the second embodiment is obtained by adding a temperature monitor circuit 16 to the microwave amplifier circuit according to the first embodiment. The temperature monitor circuit 16 provided on the multilayer substrate 8 is not easily affected by RF. Become. Other operations are the same as those in the first embodiment.
[0022]
As described above, the microwave high power amplifier circuit according to the second embodiment includes the lower conductor layer 13d having the GND pattern formed on the entire surface, the upper conductor layer 13a on which the capacitor 4 is disposed, and the lower conductor layer 13a. A multilayer substrate 8 having dielectric layers 14a to 14c that electrically insulate the conductor layer 13d from the upper conductor layer 13a, and two spaces that accommodate the multilayer substrate 8 and are divided by the multilayer substrate 8 are formed. The temperature monitor circuit 16 is mounted on the upper conductor layer 13a.
[0023]
As described above, according to the second embodiment, since the temperature monitor circuit is mounted on the multilayer substrate, an effect of enabling temperature monitoring that is hardly affected by RF can be obtained.
[0024]
Embodiment 3 FIG.
FIG. 4 is a plan view showing Embodiment 2 and Embodiment 3 of the microwave amplifier circuit according to the present invention. In FIG. 4, 16 is a temperature monitor circuit, 17 is a detection monitor circuit, and 18 is a capacitor bank, which corresponds to the configuration surrounded by the through-hole 12 of the first embodiment shown in FIG. . The multilayer substrate 8 is provided with a detection monitor circuit 17 in addition to the capacitor bank 18.
[0025]
In the third embodiment, a detection monitor circuit 17 is added to the microwave amplifier circuit of the first embodiment.
[0026]
Next, the operation will be described.
The microwave amplifier circuit according to the third embodiment is obtained by adding a detection monitor circuit 17 to the microwave amplifier circuit according to the first embodiment, and the detection monitor circuit provided on the multilayer substrate 8 is less susceptible to RF. . Other operations are the same as those in the first embodiment.
[0027]
As described above, the microwave high power amplifier circuit according to the third embodiment includes a lower conductor layer 13d having a GND pattern formed on the entire surface, an upper conductor layer 13a on which the capacitor bank 4 is disposed, and a lower layer. A multilayer substrate 8 having dielectric layers 14a to 14c that electrically insulate the conductor layer 13d and the upper conductor layer 3a from each other, and two spaces that accommodate the multilayer substrate 8 and are divided by the multilayer substrate 8 A cover 9 and a case 3 are formed, and a detection monitor circuit 17 is mounted on an upper conductor layer 13a.
[0028]
As described above, according to the third embodiment, since the temperature monitor circuit is mounted on the multilayer substrate, the effect of enabling the detection monitor that is not easily affected by RF can be obtained.
[0029]
Embodiment 4 FIG.
FIG. 5 is a cross-sectional view showing a fourth embodiment and a fifth embodiment of the microwave amplifier circuit according to the present invention, and FIG. 6 is a perspective view showing a post position image of the microwave amplifier circuit according to the fourth embodiment of the present invention. FIG. 5 and 6, 19 is a metal post, and 21 is a temperature monitor sensor. The same reference numerals as those in FIG. 1 denote the same or equivalent components.
[0030]
Next, the operation will be described.
The microwave amplifier circuit according to the fourth embodiment is obtained by adding a metal post 19 to the microwave amplifier circuit according to the first embodiment. The metal post 19 is provided at a quarter wavelength position in the case 3 and connected to the GND. The metal post 19 stabilizes the influence of the electric field on the circuit elements in the case 3. Other operations are the same as those in the first embodiment.
[0031]
As described above, the microwave high power amplifier circuit according to the fourth embodiment includes the lower conductor layer 13d having the GND pattern formed on the entire surface, the upper conductor layer 13a on which the capacitor 4 is disposed, and the lower layer conductor layer 13a. A multilayer substrate 8 having dielectric layers 14a to 14c that electrically insulate the conductor layer 13d from the upper conductor layer 13a, and two spaces that accommodate the multilayer substrate 8 and are divided by the multilayer substrate 8 are formed. Cover 9 and case 3, and a metal post 19 connected to GND at a quarter-wavelength position in case 3.
[0032]
As described above, according to the fourth embodiment, since the position of the quarter wavelength in the case is dropped to GND by the metal post, the circuit elements in the case that are easily affected by the electric field can be stabilized. An effect is obtained.
[0033]
Embodiment 5 FIG.
FIG. 5 is a cross-sectional view showing a fourth embodiment and a fifth embodiment of the microwave amplifier circuit according to the present invention, and FIG. 6 is a perspective view showing a post position image of the microwave amplifier circuit according to the fourth embodiment of the present invention. FIG. 5 and 6, 19 is a metal post, and 21 is a temperature monitor sensor. The same reference numerals as those in FIG. 1 denote the same or equivalent components.
[0034]
Next, the operation will be described.
In the microwave amplifier circuit according to the fifth embodiment, a metal post 19 is added to the microwave amplifier circuit according to the first embodiment, and a temperature monitor sensor 21 is fastened to the metal post 19 together. By tightening the temperature monitor sensor 21 together with the metal post, the temperature monitor sensor 21 is not easily affected by the electric field and RF. Other operations are the same as those in the first and fourth embodiments.
[0035]
As described above, the microwave high power amplifier circuit according to the fifth embodiment includes the lower conductor layer 13d having the GND pattern formed on the entire surface, the upper conductor layer 13a on which the capacitor 4 is disposed, and the lower layer conductor layer 13a. A multilayer substrate 8 having dielectric layers 14a to 14c that electrically insulate the conductor layer 13d from the upper conductor layer 13a, and two spaces that accommodate the multilayer substrate 8 and are divided by the multilayer substrate 8 are formed. Cover 9 and case 3, and a metal post 19 connected to GND at a position of a quarter wavelength in the case 3, and attached to the upper conductor layer 13 a by being fastened together with the metal post 19. The temperature monitor sensor 21 is mounted.
[0036]
As described above, according to the fifth embodiment, the temperature monitor for monitoring the flange temperature of the transistor is jointly fastened to the metal post dropped on the GND at the position of the quarter wavelength in the case. An effect is obtained in which the monitor is less susceptible to the influence of an electric field or RF.
[0037]
【The invention's effect】
As described above, according to the present invention, the inside of the case is divided into the upper and lower spaces using the GND surface of the multilayer substrate, and the transistor which is an amplifying element provided in the lower space of the multilayer substrate is obtained. Since it is provided , the lower circuit element is less affected by the upper part, and there is an effect that variation in RF characteristics of the microwave amplifier circuit can be reduced.
[0040]
According to the present invention, since the position of the quarter wavelength in the case is dropped to GND by the metal post, there is an effect of stabilizing the circuit elements in the case that are easily affected by the electric field.
[0041]
According to the present invention, since the temperature monitor for monitoring the flange temperature of the transistor is fastened together with the metal post dropped on the GND at the position of the quarter wavelength in the case, the temperature monitor has the influence of the electric field and the RF. There is an effect that can be difficult to receive.
[Brief description of the drawings]
1 is a cross-sectional view showing a first embodiment of a microwave amplifier circuit according to the present invention;
FIG. 2 is a perspective view showing the multilayer substrate portion of the first embodiment of the microwave amplifier circuit according to the present invention;
FIG. 3 is a cross-sectional view showing the layer configuration of the multilayer substrate according to the first embodiment of the microwave amplifier circuit according to the present invention;
FIG. 4 is a plan view showing a second embodiment and a third embodiment of a microwave amplifier circuit according to the present invention.
FIG. 5 is a cross-sectional view showing a fourth embodiment and a fifth embodiment of a microwave amplifier circuit according to the present invention.
FIG. 6 is a perspective view showing a post position image of a microwave amplifier circuit according to a fourth embodiment of the present invention.
FIG. 7 is a perspective view showing an example of a conventional microwave amplifier circuit.
FIG. 8 is a cross-sectional view showing an example of a conventional microwave amplifier circuit.
[Explanation of symbols]
1 transistor, 2 dielectric substrate, 3 case, 4 capacitor, 5 DC cut high frequency chip capacitor, 6 bias chip capacitor, 7 RF terminator, 8 multilayer substrate, 9 cover, 10 lead wire, 11 case wall, 12 through Hall, 13a-13d Conductor layer, 14a-14c Dielectric layer, 15 Distribution synthesis circuit, 16 Temperature monitor circuit, 17 Detection monitor circuit, 18 Capacitor bank, 19 Metal post, 20 Capacitor, 21 Temperature monitor sensor.

Claims (1)

A lower conductor layer having a GND pattern formed on the entire surface, an upper conductor layer in which a capacitor bank is disposed, and a dielectric layer that electrically insulates the lower conductor layer from the upper conductor layer. A multilayer board with
A cover and a case for accommodating the multilayer substrate and forming two spaces divided by the multilayer substrate;
A transistor which is an amplifying element provided in a space below the multilayer substrate;
A metal post connected to GND at a quarter wavelength position in the case;
A microwave high power amplifier circuit, wherein a temperature monitor sensor attached to the metal post together with the metal post is mounted on the upper conductor layer.

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