JP3709679B2 - High frequency module and characteristic adjustment method thereof - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a high frequency module such as a resonator, a filter, and an oscillator used in a microwave band and a millimeter wave band.
[0002]
[Prior art]
With the recent increase in demand for mobile communication systems and the increase in the amount of transmission information, the communication band is being expanded to the millimeter wave band. When a dielectric filter or oscillator is configured using a TE01δ mode dielectric resonator in such a high frequency band, the resonance frequency of a general TE01δ mode dielectric resonator is determined by the external dimensions of a cylindrical dielectric. In addition, since the coupling with the microstrip line is determined by the distance between them, high dimensional accuracy and positioning accuracy are required.
[0003]
Therefore, the applicant of the present application has proposed a dielectric resonator and a dielectric filter excellent in processing accuracy which have solved these problems in Japanese Patent Application No. 7-62625.
[0004]
In the dielectric resonator and the dielectric filter according to the above application, a part of the dielectric plate is used as the dielectric resonator by forming electrodes on both main surfaces of the dielectric plate. In such a dielectric resonator, since the electrode formed on the dielectric plate can be used as a ground electrode, a microstrip line is formed on another dielectric sheet or the like and laminated on the dielectric plate. Thus, a high-frequency module such as an oscillator including a dielectric resonator and an electronic component can be configured.
[0005]
In addition, a dielectric resonator device and a high-frequency module in which a part of a dielectric plate is used as a dielectric resonator, a sheet on which a line is formed are stacked on the dielectric plate, and the dielectric resonator and the line are coupled to each other are provided. This is proposed in Japanese Patent Application No. 8-294087.
[0006]
An example of the configuration is shown in FIG. 8 as a perspective view. In the figure, reference numeral 1 denotes a dielectric plate, and a TE010 mode dielectric resonator section is formed by forming a conductor film on both principal surfaces except for a part thereof. Reference numeral 2 denotes a dielectric or insulating sheet-like substrate on which lines 21 and 22 are formed. In a state where the substrate 2 is laminated on the dielectric plate 1, the lines 21 and 22 are magnetically coupled to the dielectric resonator unit. By storing such a unit in the housing, one high-frequency module is configured.
[0007]
[Problems to be solved by the invention]
In the conventional high-frequency module described above, the error variation factors such as the dimensional accuracy and assembly accuracy of semiconductor devices and parts are large, and it is very difficult to obtain the desired oscillation characteristics without adjustment. Frequency adjustment is required.
[0008]
However, the dielectric plate constituting the dielectric resonator is on the lower surface of the substrate on which the line coupled to the dielectric resonator is formed. In the assembled state, the resonator portion is hidden by the substrate, and the resonance frequency Cannot be adjusted. Therefore, the dielectric resonator alone has to adjust the resonance frequency alone. If an adjustment hole is provided on the back side of the housing, the resonance frequency can be adjusted from the back side of the housing, but as a result, the Q of the resonator is lowered and the airtightness of the housing is also deteriorated. The problem arises.
[0009]
An object of the present invention is to solve the above-mentioned problems, facilitate the adjustment of the resonance frequency of the dielectric resonator section, and prevent a decrease in Q and a deterioration in the airtightness of the casing. And providing a method for adjusting the characteristics thereof.
[0010]
[Means for Solving the Problems]
In the present invention, a conductor film is formed on both main surfaces of a dielectric plate except for a part thereof, and a region where the conductor film is not formed is defined as a dielectric resonator part, which is coupled to the dielectric resonator part. A high frequency module comprising: a substrate on which a line to be formed is superimposed on the dielectric plate; and the substrate and the dielectric plate are provided in a conductor case. The resonance frequency of the dielectric resonator part is set by deleting a part of the region facing the resonator part or by deleting a part of the dielectric resonator part of the dielectric plate together with the deletion.
[0011]
In addition, as described in claims 2 and 4, a dielectric member is applied to all or a part of the region of the substrate facing the dielectric resonator portion to set the resonance frequency of the dielectric resonator portion.
[0012]
Since the dielectric constant of the substrate overlying the dielectric plate affects the resonant frequency of the dielectric resonator section, even if the dielectric plate remains the same, the part of the area facing the dielectric resonator section of the substrate is deleted If so, the resonance frequency of the dielectric resonator section changes in the upward direction, and the resonance frequency can be set by the amount of deletion. In addition, since the dielectric constant of the dielectric of the dielectric resonator part directly affects the resonance frequency, if the dielectric resonator part of the dielectric plate is also deleted together with the substrate removal, the dielectric resonator part The resonance frequency changes relatively in the upward direction, and the resonance frequency can be set with a relatively large width depending on the amount of deletion.
[0013]
Conversely, if a dielectric member is applied to all or part of the region of the substrate facing the dielectric resonator section, the resonant frequency of the dielectric resonator section changes in the downward direction, and the resonance depends on the amount of the applied dielectric member. The frequency can be set.
[0014]
DETAILED DESCRIPTION OF THE INVENTION
A configuration of a voltage controlled oscillator (hereinafter referred to as “VCO”) according to a first embodiment of the present invention will be described with reference to FIGS.
[0015]
FIG. 1 is an exploded perspective view showing the overall configuration. In the figure, reference numeral 1 denotes a dielectric plate, and on the upper surface in the figure, a conductor film 11 having a central portion with a circular conductor non-forming portion is formed. A conductor film having the same shape as the conductor film 11 is also formed on the lower surface. The dielectric portion where the upper and lower circular conductor non-forming portions face each other is used as a TE010 mode dielectric resonator portion 13.
[0016]
In FIG. 1, reference numeral 2 denotes a dielectric sheet-like substrate made of PTFE or the like, and a line for magnetically coupling with the dielectric resonator portion is formed on the upper surface in the drawing. In the figure, reference numeral 3 denotes a metal spacer, which forms an opening 14 into which the dielectric plate 1 is fitted. In a state where the dielectric plate 1 is fitted in the opening 14, the surface of the dielectric plate 1 is flush with the surface of the spacer 3. In this state, the dielectric plate 1 and the substrate 2 are overlapped at a predetermined position by overlapping the substrate 2 on the upper surface of the spacer 3.
[0017]
In FIG. 1, reference numeral 4 denotes a stem to which three pins indicated by 15, 16 and 17 are attached. The spacer 3, the dielectric plate 1, and the substrate 2 are mounted in this order on the stem 4, the pins 15, 16, and 17 are soldered to the terminal electrodes provided on the substrate 2, and the cap 5 is bonded onto the stem 4. By doing so, the VCO is configured. The stem 4 and the cap 5 constitute a conductor case. The conductor case confines the electromagnetic field of the dielectric resonator and prevents external radiation and coupling with the outside.
[0018]
2 is a perspective view showing a state before the cap 5 is put on, FIG. 3A is a plan view of the laminated state of the spacer, the dielectric plate and the substrate after frequency adjustment, and FIG. 3B is a diagram. 2 is a cross-sectional view corresponding to an AA portion in FIG.
[0019]
As shown in FIG. 3, a main line 21 and a sub line 22 are formed on the upper surface of the substrate 2, and these are magnetically coupled to the TE010 mode of the dielectric resonator unit 13 provided on the dielectric plate. One end of the main line 21 is connected to the ground electrode 35 via the termination resistor 24. The other end of the main line 21 is connected to the gate of the FET 23 through a bonding wire. A varactor diode 25 is connected between a predetermined position of the sub line 22 and the ground electrode 35. Further, a high impedance line 28 is drawn out from the sub line 22 and a trap for the oscillation frequency is inserted every λg / 4. (Λg is a wavelength on the transmission line) A chip resistor 31 is connected between the end of the high impedance line 28 and the bias electrode 36.
[0020]
A high impedance line 26 is drawn out from the line connecting the source of the FET 23, and a chip resistor 29 is connected between the end of the line and the ground electrode 35. Between the line connecting the drain of the FET 23 and the output electrode 37, a capacitor is formed by the gap between the lines 33 and 34. Further, an inductor 27 is drawn out from a line connecting the drain of the FET 23, and a chip resistor 30 is connected between the end of the FET 23 and the input electrode 38. A chip capacitor 32 is connected between the input electrode 38 and the ground electrode 39.
[0021]
The equivalent circuit of the VCO is as shown in FIG. In this way, the dielectric resonator unit 13, the main line 21, and the FET 23 constitute a band reflection type oscillator, and the varactor diode 25 is provided together with the sub line 22 coupled to the dielectric resonator unit 13, thereby providing a varactor. A VCO whose oscillation frequency varies with the capacitance of the diode is formed. Therefore, by changing the resonance frequency of the dielectric resonator section 13, the change curve of the oscillation frequency with respect to the bias voltage applied to the varactor diode can be shifted.
[0022]
As shown in FIG. 2, the frequency adjustment is performed by connecting a measuring instrument to the pins 15, 16 and 17 in a state before the cap 5 is put, and measuring the oscillation frequency from the surface side of the substrate 2 by a drill or a minute grinding tool. Thus, the substrate 2 is partially deleted and a hole as shown by B is formed. This hole B is formed at a predetermined position in the region of the dielectric resonator section 13 shown in FIG. Since the effective dielectric constant of the dielectric resonator portion decreases as the diameter of the hole B is increased, the resonance frequency increases. Further, the influence of the hole B on the resonance mode also changes depending on the position in the region of the dielectric resonator section 13, so that the resonance frequency can also be set.
[0023]
Next, the configuration of the VCO according to the second embodiment will be described with reference to FIG. This figure is a plan view and a cross-sectional view in the laminated state of the spacer, the dielectric plate and the substrate. The difference from the first embodiment is that when the hole C is formed at a predetermined position of the substrate 2, it is deleted up to the dielectric plate 1 portion. Other configurations are the same as those in the first embodiment. Usually, since the dielectric constant of the dielectric plate 1 is higher than that of the substrate 2, by partially deleting the dielectric plate 1 together with the substrate 2, frequency adjustment can be performed over a wider range than in the case of the first embodiment.
[0024]
Next, the configuration of the VCO according to the third embodiment will be described with reference to FIGS.
[0025]
6 is a perspective view showing a state before the cap 5 is put on, FIG. 7A is a plan view of the laminated state of the spacer, the dielectric plate and the substrate after frequency adjustment, and FIG. It is sectional drawing equivalent to the AA part in FIG.
[0026]
In this example, instead of drilling holes in the substrate and the dielectric plate as in the first and second embodiments, a dielectric member is provided. That is, as shown in FIG. 6, a spacer 3, a dielectric plate (not shown in the figure because it is located in the spacer 3), and a substrate 2 are placed on a stem 4, and terminal electrodes of the substrate are placed on pins. Is soldered and the oscillation frequency is measured. Then, the optimum dielectric member 40 is attached to a part of the region facing the dielectric resonator portion in accordance with the amount of deviation from the reference value of the oscillation frequency.
[0027]
By sticking the dielectric member 40 in this way, the effective dielectric constant of the dielectric resonator portion increases and the resonance frequency decreases. Therefore, it becomes possible to change to a predetermined resonance frequency by selecting the size and dielectric constant of the dielectric member 40.
[0028]
【The invention's effect】
According to the first to fourth aspects of the present invention, the frequency adjustment can be performed without providing an opening in a housing portion such as a stem, so that the airtightness of the housing can be reduced without lowering the Q. Absent.
[0029]
In particular, according to the first and third aspects of the invention, the resonance frequency of the dielectric resonator portion can be easily adjusted in the upward direction.
[0030]
Moreover, according to the second and fourth aspects of the invention, the resonance frequency of the dielectric resonator section can be easily adjusted in the descending direction.
[Brief description of the drawings]
FIG. 1 is an exploded perspective view showing a configuration of a VCO according to a first embodiment. FIG. 2 is a perspective view showing a configuration after frequency adjustment of the VCO. FIG. 3 is a plan view showing a configuration of a main part of the VCO. FIG. 4 is an equivalent circuit diagram of the VCO. FIG. 5 is a plan view and a cross-sectional view of the main part of the VCO according to the second embodiment. FIG. 6 is a frequency adjustment of the VCO according to the third embodiment. FIG. 7 is a plan view and a cross-sectional view showing the structure of the main part of the VCO. FIG. 8 is a perspective view showing the structure of the main part of the conventional VCO.
1-dielectric plate 2-substrate 3-spacer 4-stem 5-cap 11-conductor film 13-dielectric resonator 14-openings 15, 16, 17-pin 21-main line 22-sub line 23- FET
24-Termination resistor 25-Varactor diode 26, 27, 28-Inductors 29, 30, 31-Chip resistor 32-Chip capacitor 33, 34-Line 35-Ground electrode 36-Bias electrode 37-Output electrode 38-Input electrode 39- Earth electrode 40-dielectric member B, C-hole

Claims (4)

A conductor film is formed on both main surfaces of the dielectric plate except for a part thereof. A region where the conductor film is not formed is used as a dielectric resonator part, and a line coupled to the dielectric resonator part is formed. In the high-frequency module formed by superimposing the substrate on the dielectric plate, and providing the substrate and the dielectric plate in a conductor case,
A part of the region facing the dielectric resonator part of the substrate is deleted, or a part of the dielectric resonator part of the dielectric plate is deleted together with the deletion, and the dielectric resonator part A high-frequency module characterized in that the resonance frequency is set. A conductor film is formed on both main surfaces of the dielectric plate except for a part thereof, and a region where the conductor film is not formed is used as a dielectric resonator part, and a line coupled to the dielectric resonator part is formed. In the high-frequency module formed by superimposing the substrate on the dielectric plate, and providing the substrate and the dielectric plate in a conductor case,
A high-frequency module, wherein a dielectric member is applied to all or a part of a region of the substrate facing the dielectric resonator portion to set a resonance frequency of the dielectric resonator portion. A conductor film is formed on both main surfaces of the dielectric plate except for a part thereof. A region where the conductor film is not formed is used as a dielectric resonator part, and a line coupled to the dielectric resonator part is formed. A method for adjusting a resonance frequency of the dielectric resonator part in a high-frequency module, wherein the substrate and the dielectric plate are provided in a conductor case, and the substrate and the dielectric plate are provided on a surface side of the substrate. Then, the resonance frequency of the dielectric resonator unit is set by partially deleting the substrate or the dielectric plate together with the substrate. A conductor film is formed on both main surfaces of the dielectric plate except for a part thereof. A region where the conductor film is not formed is used as a dielectric resonator part, and a line coupled to the dielectric resonator part is formed. A method for adjusting a resonance frequency of the dielectric resonator part in a high-frequency module comprising the substrate and the dielectric plate overlaid on the dielectric plate, wherein the substrate and the dielectric plate are provided in a conductor case. A method for adjusting characteristics of a high-frequency module, comprising: setting a resonance frequency of the dielectric resonator section by applying a dielectric member to all or a part of a region facing the body resonator section.

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