JP3700663B2 - Plating film for electronic parts and electronic parts - Google Patents

Plating film for electronic parts and electronic parts Download PDF

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Publication number
JP3700663B2
JP3700663B2 JP2002073597A JP2002073597A JP3700663B2 JP 3700663 B2 JP3700663 B2 JP 3700663B2 JP 2002073597 A JP2002073597 A JP 2002073597A JP 2002073597 A JP2002073597 A JP 2002073597A JP 3700663 B2 JP3700663 B2 JP 3700663B2
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concentration
plating film
film
plating
electronic
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JP2003268589A (en
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克己 梅田
卓晃 山下
太和 門脇
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Seiko Epson Corp
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Seiko Epson Corp
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Description

【0001】
【発明の属する技術分野】
本発明は、電子回路同士を接続するための接続端子に形成される鉛フリー半田めっき被膜、及び、めっき被膜を設けた接続端子を有する電子部品に関する。
【0002】
【従来の技術】
配線ケーブル、配線基板、或いは、電気素子等の電子部品は、電子回路同士を電気的に導通させると共に電子部品同士を接合するための接続端子を備えている。この接続端子にはめっき被膜が形成され、このめっき被膜によって導通と接合が同時に行われている。このめっき被膜としては、従来より、Sn(錫)−Pb(鉛)系半田が用いられてきた。しかし、近年、鉛の環境への悪影響が指摘されており、鉛に代えてBi(ビスマス)を添加したSn−Bi系の鉛フリー半田が用いられるようになっている。
【0003】
このSn−Bi系の鉛フリー半田めっきについては、例えば、特開平11−251503号公報等に開示されているように、Biを4重量%未満の濃度で含有させて用いられるのが一般的である。
【0004】
【発明が解決しようとする課題】
しかし、Bi濃度を4重量%未満に抑えたSn−Bi系の半田めっきでは、Sn−Pb系半田めっきに比較して、20〜30℃程度融点が高くなり、接合工程における作業条件を変更したり、接合作業の温度上昇による電子部品への熱影響が避けられなかった。
【0005】
本発明は上記した事情に鑑み提案されたもので、その目的は、Sn−Bi系半田めっきの融点をSn−Pb系半田めっき程度に抑えることができる電子部品用めっき被膜、及び、電子部品を提供しようとするものである。
【0006】
【課題を解決するための手段】
本発明は上記目的を達成するために提案されたもので、請求項1に記載のものは、電子部品が備える電子回路同士を接続する接続端子の表面に形成されたSn−Bi系半田めっき被膜において、
Biの平均濃度を5〜20重量%の範囲に設定すると共に、偏析によって被膜表面のBi濃度を20〜35重量%の範囲に設定して内部に存在するBiの濃度より高めたことを特徴とする電子部品用めっき被膜である。
【0008】
請求項に記載のものは、被膜形成時における電流密度を制御することにより、被膜表面に内部よりもBi濃度の高い領域を偏析させたことを特徴とする請求項1に記載の電子部品用めっき被膜である。
【0009】
請求項に記載のものは、被膜形成めっき形成工程にて最終浴槽のBi濃度をそれ以前の浴槽のBi濃度よりも高く設定することにより、被膜表面に内部よりもBi濃度の高い領域を偏析させたことを特徴とする請求項1に記載の電子部品用めっき被膜である。
【0010】
請求項4に記載のものは、電子回路同士を接続するための接続端子を備え、該接続端子の表面にSn−Bi系半田によるめっき被膜を形成した電子部品において、
前記めっき被膜は、Biの平均濃度を5〜20重量%の範囲に設定すると共に、偏析によって被膜表面のBi濃度を20〜35重量%の範囲に設定して内部に存在するBiの濃度より高めたことを特徴とする電子部品である。
【0011】
【発明の実施の形態】
以下、本発明の実施の形態を説明する。図1及び図2に示すように、フレキシブル・プリンティング・サーキット(FPC)やテープ・キャリア・パッケージ(TCP)などのフレキシブルケーブル1(本発明の電子部品の一種)には、複数の接続端子2…が形成されている。そして、各接続端子2…における表面にはめっき被膜3が形成されている。なお、図1では、一方の端部しか図示していないが、他方の端部についても同様に構成されている。
【0012】
このフレキシブルケーブル1は、互いに積層された基体フィルム4及び4´の内側に線状の導体パターン5(電子回路の一種)を複数横並びに形成した構成である。上記の基体フィルム4及び4´は、例えば、ポリイミド等の電気絶縁性を有するフィルムによって構成され、各導体パターン5…はCu層(銅箔層)によって構成されている。
【0013】
このフレキシブルケーブル1は、概ね次の手順で作製される。
まず、基体フィルム4の一方の表面全体に銅箔層を形成し、この銅箔層をフォトリソグラフィー等の方法によって部分的に除去する。これにより、基体フィルム4上に複数の導体パターン5…を形成する。
各導体パターン5…を形成したならば、基体フィルム4の導体形成面に基体フィルム4´を接合し、接続端子2となる導体先端部を露出させた状態で、各導体パターン5…を基体フィルム4´で覆う。
基体フィルム4´を接合したならば、各接続端子2…(即ち、各導体パターン5…の先端部分)の表面にめっき被膜3を形成する。このめっき被膜3の形成によってフレキシブルケーブル1が得られる。
【0014】
上記のめっき被膜3は、Sn−Bi系半田により作製された被膜であり、その厚さは3〜10μm程度とされる。このめっき被膜3は、例えば、Biの平均含有量が5〜20重量%とされ、Ag(銀)、Cu(銅)、Zn(亜鉛)の少なくとも一成分を3重量%未満含有し、残余がSnとされる。なお、Ag、Cu、Znについては、Agのみ、Cuのみ、Znのみを添加してもよく、2成分或いは3成分添加しても良い。そして、2成分以上添加した場合には合計の添加量を3重量%未満とする。
ここで、Ag、Cu、Znの少なくとも一成分を微量含有させるのは、Ag等の成分はSnに対して溶け易いからである。即ち、これらの添加成分を含有させることで半田付けの作業性を改善できる。なお、SnとBiだけでめっき被膜3を構成してもよい。
そして、本実施形態におけるめっき被膜3の成分組成は、Snが82重量%、Biが16重量%、Ag、Cu、Znの混合成分が2重量%である。
【0015】
このめっき被膜3は、偏析によって被膜表面3aのBi濃度を内部3bのBi濃度より高めた点に特徴を有する。本実施形態では、被膜全体におけるBiの平均含有量が16重量%であるのに対し、被膜表面3aのBi濃度を30重量%まで高めている。
なお、めっき被膜3におけるBiの平均含有量は、上記したように5〜20重量%で変えられるため、被膜表面3aのBi濃度も平均含有量に応じて変化する。例えば、Biの平均含有量が5〜20重量%で変化した場合、被膜表面3aのBi濃度は20〜35重量%の範囲で変化する。
【0016】
このめっき被膜3では、被膜表面3a側のBi濃度が内部3bの濃度よりも高いため、被膜表面3aの融点を、Biの平均含有量で規定される融点よりも下げることができる。例えば、偏析させていないめっき被膜に比較して、10〜20℃程度低くできる。
本実施形態の組成では、被膜表面3aのBi濃度が30重量%程度であるため、この被膜表面3aはSn−Pb系めっき被膜と同程度の200℃で溶融する。そして、被膜表面3aが溶融すると、内部3bについても連鎖的に溶融する。従って、部品同士の接続作業をSn−Pb系めっき被膜と同程度の加熱温度で行うことができる。
【0017】
このめっき被膜3の形成は、例えば、電界めっき法や無電解めっき法によりなされる。
【0018】
電解めっき法による被膜形成方法では、電流密度を調整することによりBiの厚さ方向の成分比を変化させることが可能であり、被膜形成の最終段階で電流値を低下させることにより、被膜表面3a側に内部3bよりもBi濃度の高い領域を偏析させることができる。
【0019】
例えば、被膜形成の最終段階で電流値を1.5Aとし、それ以前の電流値を2.5Aに設定することで、被膜表面3a側に内部3bよりもBi濃度の高い領域を偏析させることができる。
【0020】
また、無電解めっき法による被膜形成方法では、複数のめっき浴槽を備えた無電解めっき処理装置を用いて、複数の浴槽を通過させて順次被膜厚さを増加させるが、最終浴槽のBi濃度をそれ以前の浴槽のBi濃度よりも高く設定することにより、被膜表面3a側に内部3bよりもBi濃度の高い領域を偏析させることができる。
【0021】
例えば、最終浴槽のBi濃度を30重量%とし、それ以前の浴槽におけるBi濃度を5重量%に設定することにより、被膜表面3a側に内部3bよりもBi濃度の高い領域を偏析させることができる。
【0022】
次に、このめっき被膜3が形成されたフレキシブルケーブル1を用いた電子部品同士(即ち、電子回路同士)の接続作業について説明する。ここで、図3は、上記のフレキシブルケーブル1が用いられたインクジェット式記録ヘッド11(以下、記録ヘッド11という。)を説明する図である。
【0023】
まず、この記録ヘッド11の構造について簡単に説明する。記録ヘッド11は、複数の圧電振動子からなる振動子群12、固定板13、及び、フレキシブルケーブル1等をユニット化した振動子ユニット14と、この振動子ユニット14を収納可能なケース15と、ケース15の先端面に接合される流路ユニット16と、ケース15の取付面側に配設される配線基板17とを備えている。
【0024】
ケース15は、先端と後端が共に開放した収納空部18を内部に形成した合成樹脂製のブロック状部材であり、収納空部18内には振動子ユニット14が収納固定されている。
【0025】
上記の振動子群12は電子部品の一種であり、外部電極パターン(電子回路の一種,図示せず。)がフレキシブルケーブル1の各導体パターン5…と導通される。この振動子群12は、例えば、30μm〜100μm程度の極めて細い幅の櫛歯状に切り分けられた複数の圧電振動子によって構成されている。そして、この振動子群12は、自由端部が固定板13の縁から外側に突出された状態で固定板13に接合されている。また、固定板13とは反対側の表面には、外部電極パターンの接続端部が形成され、この接続端部によって接点面12aが構成されている。上記のフレキシブルケーブル1の一端は、この接点面12a上で振動子群12と接合される。
【0026】
流路ユニット16は、ノズル開口20、圧力室21、及び、共通インク室22等が形成された部材であり、例えば、シリコン基板やステンレス板によって構成されている。そして、この流路ユニット16は、ケース15の先端面に接着されている。
【0027】
上記の配線基板17もまた電子回路の一種であり、コネクタや導体パターン(電子回路の一種,何れも図示せず。)を備えた所謂プリント配線基板によって構成されている。
【0028】
そして、この記録ヘッド11を組み立てるにあたり、振動子ユニット14が作製される。この振動子ユニット14を作製するにあたっては、振動子群12と固定板13とが接合されたサブユニットに対し、上記のフレキシブルケーブル1が接合される。
【0029】
この接合作業時においては、図3(b)に示すように、振動子群12の接点面12a上にフレキシブルケーブル1の一端部を載置して位置決めし、振動子群12とは反対側のケーブル表面から加熱圧着端子25を押圧する。この加熱圧着端子25の押圧によって、めっき被膜3が加熱再溶融(リフロー)する。さらに、加熱圧着端子25をケーブル表面から離隔することでめっき被膜3が固化し、フレキシブルケーブル1と振動子群12とが接合される。
【0030】
この場合、本実施形態のめっき被膜3は、偏析によって被膜表面3aのBi濃度が30重量%程度まで高められているので、上記したようにSn−Pb系めっき被膜と同程度の約200℃の温度で溶融する。従って、加熱圧着端子25の温度を従来と同程度に調整すればよく、フレキシブルケーブル1の破損、例えば、基体フィルム4及び4´の破損やフレキシブルケーブル1に実装されている制御用IC(図示せず)の破損を防止することができる。
【0031】
また、作製された振動子ユニット14をケース15内に接着した後においては、配線基板17とフレキシブルケーブル1の他端部を接合する。
【0032】
この接合作業時においては、図3(c)に示すように、配線基板17の接点面17a上にフレキシブルケーブル1の他端部を載置して位置決めし、配線基板17とは反対側のケーブル表面から加熱圧着端子25を押圧する。この加熱圧着端子25の押圧によってめっき被膜3がリフローし、加熱圧着端子25をケーブル表面から離隔することでめっき被膜3が固化する。このめっき被膜3の固化によってフレキシブルケーブル1と配線基板17とが接合される。
【0033】
この場合においても、偏析によってめっき被膜3における被膜表面3aのBi濃度が30重量%程度まで高められているので、加熱圧着端子25の温度を従来(即ち、Sn−Pb系のめっき被膜)と同程度に調整すればよく、フレキシブルケーブル1の破損を防止できる。
【0034】
このように、本実施形態では、接続端子2に形成されためっき被膜3に関し、偏析によって被膜表面3aのBi濃度を内部3bよりも高めているので、被膜表面3aについては、めっき被膜3の平均Bi含有量で規定される融点よりも下げることができる。そして、めっき被膜3の内部3bについては、被膜表面3aの溶融に伴って溶融させることができる。これにより、Bi濃度を抑えつつもめっき被膜3の融点を下げることができる。これにより、Sn−Bi系半田における融点を、Sn−Pb系半田めっき程度に抑えることができ、Sn−Pb系半田めっきと同一条件で接合作業を実施することができる。
【0035】
【発明の効果】
以上説明したように本発明によれば、Biの平均濃度を5〜20重量%の範囲に設定すると共に、偏析によって被膜表面のBi濃度を20〜35重量%の範囲に設定して、内部に存在するBiの濃度よりも高めたので、被膜表面については、Biの平均含有量で規定される融点よりも低い温度で溶融する。そして、被膜表面が溶融すると、内部についても連鎖的に溶融する。このため、接合温度を、従来のSn−Pb系半田めっき被膜と同等の温度まで下げることができる。
従って、電子部品への熱影響も従来レベルに抑えることが可能となり、品質レベルの大幅な変動を防止することができるものである。また、技術の多様化も図れる。
【図面の簡単な説明】
【図1】フレキシブルケーブルの端部を説明する図である。
【図2】めっき被膜を説明する部分拡大断面図である。
【図3】フレキシブルケーブルを用いた記録ヘッドを説明する図であり、(a)は断面図、(b)は振動子ユニットにおけるサブユニットとフレキシブルケーブルの接合を説明する図、(c)は配線基板とフレキシブルケーブルの接合を説明する図である。
【符号の説明】
1 フレキシブルケーブル
2 接続端子
3 めっき被膜
3a 被膜表面
3b 内部
4,4´ 基体フィルム
5 導体パターン
11 インクジェット式記録ヘッド
12 振動子群
13 固定板
14 振動子ユニット
15 ケース
16 流路ユニット
17 配線基板
18 収納空部
20 ノズル開口
21 圧力室
22 共通インク室
25 加熱圧着端子
[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a lead-free solder plating film formed on a connection terminal for connecting electronic circuits to each other, and an electronic component having a connection terminal provided with a plating film.
[0002]
[Prior art]
An electronic component such as a wiring cable, a wiring board, or an electric element includes a connection terminal for electrically connecting electronic circuits and joining the electronic components. A plating film is formed on the connection terminal, and conduction and joining are simultaneously performed by the plating film. Conventionally, Sn (tin) -Pb (lead) -based solder has been used as the plating film. However, in recent years, the adverse effect of lead on the environment has been pointed out, and Sn-Bi based lead-free solder added with Bi (bismuth) instead of lead has been used.
[0003]
As for this Sn-Bi-based lead-free solder plating, for example, as disclosed in JP-A-11-251503, it is common to use Bi in a concentration of less than 4% by weight. is there.
[0004]
[Problems to be solved by the invention]
However, Sn-Bi solder plating with a Bi concentration of less than 4% by weight has a higher melting point of about 20-30 ° C. than Sn-Pb solder plating, and changes the working conditions in the joining process. In addition, the heat effects on the electronic components due to the temperature increase during the joining work were inevitable.
[0005]
The present invention has been proposed in view of the above-described circumstances, and its purpose is to provide a plating film for electronic parts capable of suppressing the melting point of Sn-Bi solder plating to the level of Sn-Pb solder plating, and an electronic part. It is something to be offered.
[0006]
[Means for Solving the Problems]
The present invention has been proposed in order to achieve the above object. According to the present invention, an Sn-Bi solder plating film formed on the surface of a connection terminal for connecting electronic circuits included in an electronic component is provided. In
The average concentration of Bi is set in the range of 5 to 20% by weight, and the concentration of Bi on the surface of the coating is set in the range of 20 to 35% by segregation to increase the concentration of Bi existing therein. This is a plating film for electronic parts.
[0008]
2. The electronic component according to claim 1, wherein a region having a higher Bi concentration than the inside is segregated on the surface of the coating by controlling a current density at the time of forming the coating. It is a plating film.
[0009]
According to the third aspect of the present invention, the Bi concentration in the final bath is set higher than the Bi concentration in the previous bath in the film forming plating forming step, thereby segregating a region having a higher Bi concentration than the inside on the coating surface. The plated film for electronic parts according to claim 1, wherein the plated film is for electronic parts.
[0010]
An electronic component comprising a connection terminal for connecting electronic circuits to each other, wherein a plating film made of Sn-Bi solder is formed on the surface of the connection terminal,
In the plating film, the average concentration of Bi is set in the range of 5 to 20% by weight, and the concentration of Bi on the surface of the film is set in the range of 20 to 35% by segregation and is higher than the concentration of Bi existing inside. This is an electronic component.
[0011]
DETAILED DESCRIPTION OF THE INVENTION
Embodiments of the present invention will be described below. As shown in FIGS. 1 and 2, a flexible cable 1 (a kind of electronic component of the present invention) such as a flexible printing circuit (FPC) or a tape carrier package (TCP) has a plurality of connection terminals 2. Is formed. And the plating film 3 is formed in the surface in each connection terminal 2 .... In FIG. 1, only one end is shown, but the other end is configured similarly.
[0012]
The flexible cable 1 has a configuration in which a plurality of linear conductor patterns 5 (a kind of electronic circuit) are formed side by side inside the base films 4 and 4 ′ stacked on each other. Said base film 4 and 4 'are comprised by the film which has electrical insulation, such as a polyimide, for example, and each conductor pattern 5 ... is comprised by Cu layer (copper foil layer).
[0013]
The flexible cable 1 is generally manufactured by the following procedure.
First, a copper foil layer is formed on one entire surface of the base film 4, and this copper foil layer is partially removed by a method such as photolithography. Thus, a plurality of conductor patterns 5 are formed on the base film 4.
If each conductor pattern 5 ... is formed, the substrate film 4 'is bonded to the conductor forming surface of the substrate film 4, and each conductor pattern 5 ... is applied to the substrate film in a state in which the conductor tip portion to be the connection terminal 2 is exposed. Cover with 4 '.
When the base film 4 ′ is joined, the plating film 3 is formed on the surface of each connection terminal 2... (That is, the tip portion of each conductor pattern 5...). The flexible cable 1 is obtained by forming the plating film 3.
[0014]
The plating film 3 is a film made of Sn—Bi solder and has a thickness of about 3 to 10 μm. For example, the plating film 3 has an average Bi content of 5 to 20% by weight, contains at least one component of Ag (silver), Cu (copper), and Zn (zinc) in an amount of less than 3% by weight, and the remainder Sn. As for Ag, Cu, and Zn, only Ag, Cu, or Zn alone may be added, or two or three components may be added. When two or more components are added, the total amount added is less than 3% by weight.
Here, the reason why a trace amount of at least one component of Ag, Cu, and Zn is contained is that a component such as Ag is easily dissolved in Sn. That is, the soldering workability can be improved by adding these additive components. In addition, you may comprise the plating film 3 only by Sn and Bi.
And the component composition of the plating film 3 in this embodiment is Sn of 82 weight%, Bi is 16 weight%, and the mixed component of Ag, Cu, and Zn is 2 weight%.
[0015]
This plated coating 3 is characterized in that the Bi concentration on the coating surface 3a is higher than the Bi concentration on the inside 3b by segregation. In this embodiment, the average Bi content in the entire coating is 16% by weight, whereas the Bi concentration on the coating surface 3a is increased to 30% by weight.
In addition, since the average content of Bi in the plating film 3 can be changed by 5 to 20% by weight as described above, the Bi concentration on the coating surface 3a also changes according to the average content. For example, when the average content of Bi changes from 5 to 20% by weight, the Bi concentration on the coating surface 3a changes in the range of 20 to 35% by weight.
[0016]
In this plating film 3, since the Bi concentration on the film surface 3a side is higher than the concentration in the inner part 3b, the melting point of the film surface 3a can be made lower than the melting point defined by the average content of Bi. For example, it can be lowered by about 10 to 20 ° C. as compared with a plating film that is not segregated.
In the composition of the present embodiment, since the Bi concentration on the coating surface 3a is about 30% by weight, the coating surface 3a melts at 200 ° C., which is about the same as the Sn—Pb plating coating. When the coating surface 3a is melted, the interior 3b is also melted in a chain. Therefore, the connection work of components can be performed at the heating temperature comparable as a Sn-Pb type plating film.
[0017]
The plating film 3 is formed by, for example, an electroplating method or an electroless plating method.
[0018]
In the film formation method by the electrolytic plating method, it is possible to change the component ratio in the thickness direction of Bi by adjusting the current density, and by reducing the current value in the final stage of film formation, the film surface 3a A region having a higher Bi concentration than the interior 3b can be segregated on the side.
[0019]
For example, by setting the current value to 1.5 A at the final stage of film formation and setting the current value to 2.5 A before that, it is possible to segregate a region having a higher Bi concentration than the inside 3 b on the film surface 3 a side. it can.
[0020]
Moreover, in the film formation method by the electroless plating method, the film thickness is sequentially increased by passing through the plurality of bathtubs using an electroless plating apparatus provided with a plurality of plating baths. By setting it higher than the Bi concentration of the previous bath, it is possible to segregate a region having a higher Bi concentration than the inside 3b on the coating surface 3a side.
[0021]
For example, by setting the Bi concentration in the final bath to 30% by weight and setting the Bi concentration in the previous bath to 5% by weight, a region having a higher Bi concentration than the inside 3b can be segregated on the coating surface 3a side. .
[0022]
Next, the connection operation | work of electronic components (namely, electronic circuits) using the flexible cable 1 in which this plating film 3 was formed is demonstrated. Here, FIG. 3 is a diagram illustrating an ink jet recording head 11 (hereinafter, referred to as recording head 11) in which the flexible cable 1 is used.
[0023]
First, the structure of the recording head 11 will be briefly described. The recording head 11 includes a vibrator unit 12 including a plurality of piezoelectric vibrators 12, a fixed plate 13, a flexible cable 1, and the like, and a case 15 that can store the vibrator unit 14. A flow path unit 16 joined to the front end surface of the case 15 and a wiring board 17 disposed on the mounting surface side of the case 15 are provided.
[0024]
The case 15 is a block-shaped member made of synthetic resin that has a housing empty part 18 formed therein, the front and rear ends of which are both open. The vibrator unit 14 is housed and fixed in the housing empty part 18.
[0025]
The vibrator group 12 is a kind of electronic component, and an external electrode pattern (a kind of electronic circuit, not shown) is electrically connected to each conductor pattern 5 of the flexible cable 1. The vibrator group 12 is constituted by a plurality of piezoelectric vibrators that are cut into comb teeth having an extremely narrow width of about 30 μm to 100 μm, for example. The vibrator group 12 is joined to the fixed plate 13 with a free end protruding outward from the edge of the fixed plate 13. Further, a connection end portion of the external electrode pattern is formed on the surface opposite to the fixing plate 13, and a contact surface 12a is constituted by this connection end portion. One end of the flexible cable 1 is joined to the vibrator group 12 on the contact surface 12a.
[0026]
The flow path unit 16 is a member in which a nozzle opening 20, a pressure chamber 21, a common ink chamber 22, and the like are formed, and is configured by, for example, a silicon substrate or a stainless steel plate. The flow path unit 16 is bonded to the front end surface of the case 15.
[0027]
The wiring board 17 is also a kind of electronic circuit, and is constituted by a so-called printed wiring board provided with a connector and a conductor pattern (one kind of electronic circuit, neither of which is shown).
[0028]
When the recording head 11 is assembled, the vibrator unit 14 is manufactured. In producing the vibrator unit 14, the flexible cable 1 is joined to the subunit in which the vibrator group 12 and the fixing plate 13 are joined.
[0029]
At the time of this joining operation, as shown in FIG. 3B, one end of the flexible cable 1 is placed and positioned on the contact surface 12 a of the vibrator group 12, and is opposite to the vibrator group 12. The thermocompression terminal 25 is pressed from the cable surface. The plating film 3 is heated and remelted (reflowed) by the pressing of the thermocompression terminal 25. Furthermore, the plating film 3 is solidified by separating the thermocompression terminal 25 from the cable surface, and the flexible cable 1 and the vibrator group 12 are joined.
[0030]
In this case, since the Bi concentration of the coating surface 3a is increased to about 30% by segregation, the plating film 3 of the present embodiment has a temperature of about 200 ° C., which is about the same as the Sn—Pb-based plating film as described above. Melts at temperature. Therefore, the temperature of the thermocompression bonding terminal 25 may be adjusted to the same level as in the past, and the flexible cable 1 is damaged, for example, the base films 4 and 4 'are damaged, or the control IC (not shown) mounted on the flexible cable 1 is shown. Can be prevented.
[0031]
Further, after the manufactured vibrator unit 14 is bonded in the case 15, the wiring substrate 17 and the other end portion of the flexible cable 1 are joined.
[0032]
At the time of this joining operation, as shown in FIG. 3C, the other end of the flexible cable 1 is placed and positioned on the contact surface 17a of the wiring board 17, and the cable on the side opposite to the wiring board 17 is positioned. The thermocompression terminal 25 is pressed from the surface. The plating film 3 is reflowed by the pressing of the thermocompression terminal 25, and the plating film 3 is solidified by separating the thermocompression terminal 25 from the cable surface. The flexible cable 1 and the wiring board 17 are joined by the solidification of the plating film 3.
[0033]
Also in this case, since the Bi concentration of the coating surface 3a in the plating coating 3 is increased to about 30% by segregation, the temperature of the thermocompression bonding terminal 25 is the same as that of the conventional (ie, Sn—Pb plating coating). What is necessary is just to adjust to a grade and the damage of the flexible cable 1 can be prevented.
[0034]
Thus, in this embodiment, since the Bi concentration of the coating surface 3a is higher than that of the inner portion 3b by segregation with respect to the plating coating 3 formed on the connection terminal 2, the average of the plating coating 3 is applied to the coating surface 3a. It can be lower than the melting point specified by the Bi content. And about the inside 3b of the plating film 3, it can be made to melt | dissolve with melting of the film surface 3a. Thereby, melting | fusing point of the plating film 3 can be lowered | hung, suppressing Bi density | concentration. Thereby, melting | fusing point in Sn-Bi type | system | group solder can be restrained to the grade of Sn-Pb type | system | group solder plating, and joining work can be implemented on the same conditions as Sn-Pb type | system | group solder plating.
[0035]
【The invention's effect】
As described above, according to the present invention, the average concentration of Bi is set in the range of 5 to 20% by weight, and the Bi concentration on the surface of the coating is set in the range of 20 to 35% by weight by segregation. Since it was higher than the concentration of Bi present, the coating surface melts at a temperature lower than the melting point defined by the average Bi content. When the coating surface melts, the inside also melts in a chain. For this reason, the junction temperature can be lowered to a temperature equivalent to that of a conventional Sn—Pb solder plating film.
Accordingly, it is possible to suppress the thermal influence on the electronic component to the conventional level, and to prevent a significant change in the quality level. In addition, the technology can be diversified.
[Brief description of the drawings]
FIG. 1 is a diagram illustrating an end portion of a flexible cable.
FIG. 2 is a partially enlarged cross-sectional view for explaining a plating film.
3A and 3B are diagrams illustrating a recording head using a flexible cable, where FIG. 3A is a cross-sectional view, FIG. 3B is a diagram illustrating the joining of a subunit and a flexible cable in a vibrator unit, and FIG. It is a figure explaining joining of a board | substrate and a flexible cable.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Flexible cable 2 Connection terminal 3 Plating film 3a Coating surface 3b Inside 4, 4 'Base film 5 Conductive pattern 11 Inkjet recording head 12 Vibrator group 13 Fixing plate 14 Vibrator unit 15 Case 16 Flow path unit 17 Wiring board 18 Empty portion 20 Nozzle opening 21 Pressure chamber 22 Common ink chamber 25 Thermocompression bonding terminal

Claims (4)

電子部品が備える電子回路同士を接続する接続端子の表面に形成されたSn−Bi系半田めっき被膜において、
Biの平均濃度を5〜20重量%の範囲に設定すると共に、偏析によって被膜表面のBi濃度を20〜35重量%の範囲に設定して内部に存在するBiの濃度より高めたことを特徴とする電子部品用めっき被膜。
In the Sn—Bi system solder plating film formed on the surface of the connection terminal that connects the electronic circuits included in the electronic component,
The average concentration of Bi is set in the range of 5 to 20% by weight, and the concentration of Bi on the surface of the coating is set in the range of 20 to 35% by segregation to increase the concentration of Bi existing therein. Plating film for electronic parts.
被膜形成時における電流密度を制御することにより、被膜表面に内部よりもBi濃度の高い領域を偏析させたことを特徴とする請求項1に記載の電子部品用めっき被膜。  The plating film for electronic parts according to claim 1, wherein a region having a higher Bi concentration than the inside is segregated on the surface of the film by controlling a current density at the time of forming the film. めっき形成工程にて最終浴槽のBi濃度をそれ以前の浴槽のBi濃度よりも高く設定することにより、被膜表面に内部よりもBi濃度の高い領域を偏析させたことを特徴とする請求項1に記載の電子部品用めっき被膜。  In the plating formation process, the Bi concentration of the final bath is set higher than the Bi concentration of the previous bath so that a region having a higher Bi concentration than the inside is segregated on the coating surface. The plating film for electronic components as described. 電子回路同士を接続するための接続端子を備え、該接続端子の表面にSn−Bi系半田によるめっき被膜を形成した電子部品において、
前記めっき被膜は、Biの平均濃度を5〜20重量%の範囲に設定すると共に、偏析によって被膜表面のBi濃度を20〜35重量%の範囲に設定して内部に存在するBiの濃度より高めたことを特徴とする電子部品。
In an electronic component having a connection terminal for connecting electronic circuits to each other, and forming a plating film with Sn-Bi solder on the surface of the connection terminal,
In the plating film, the average concentration of Bi is set in the range of 5 to 20% by weight, and the concentration of Bi on the surface of the film is set in the range of 20 to 35% by segregation and is higher than the concentration of Bi existing inside. An electronic component characterized by that.
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