JP3666506B2 - Method for manufacturing ink jet recording apparatus - Google Patents

Description

  The present invention relates to a method for manufacturing an ink jet recording apparatus.

  In recent years, printers using an inkjet recording apparatus as a printing apparatus such as a personal computer are widely used for reasons such as good printing performance, easy handling, and low cost. In this ink jet recording apparatus, bubbles are generated in ink by heat energy, ink droplets are ejected by pressure waves caused by the bubbles, ink droplets are sucked and discharged by electrostatic force, and a vibrator such as a piezoelectric element is used. There are various methods such as those using pressure waves.

  Generally, those using piezoelectric elements include, for example, an ink supply chamber that communicates with an ink discharge port, a pressure chamber that communicates with the ink supply chamber, a diaphragm provided in the pressure chamber, and a piezoelectric element joined thereto, etc. It is comprised by. Conventionally, the ink ejection direction and the vibration direction of the piezoelectric element are the same. In such a configuration, when a predetermined voltage is applied to the piezoelectric element, the piezoelectric element expands and contracts, causing the piezoelectric element and the diaphragm to vibrate in a drum shape, thereby compressing the ink in the pressure chamber, and thereby the ink discharge port. Ink droplets are ejected from. Currently, color ink jet recording apparatuses have become widespread, but improvement in printing performance, in particular, higher resolution and higher speed printing are required. For this reason, attempts have been made to realize high resolution and high-speed printing by miniaturizing the ink head and using a multi-nozzle head structure. For miniaturization of the ink head, miniaturization of a piezoelectric element for supplying ink is strongly demanded. In order to reduce the size of the piezoelectric element, it is possible to construct a method in which the thickness of the piezoelectric body is reduced, and flexural vibration is generated using a vibration plate to eject ink. However, the amount of displacement of the piezoelectric body itself with respect to the voltage is very small. Therefore, when the piezoelectric element is downsized, sufficient stress and vibration are not generated due to the decrease in piezoelectricity, and ink cannot be ejected. Therefore, in order to realize a high-resolution, high-speed printer having a small size, multi-nozzle head, it is necessary to develop a piezoelectric thin film material having sufficient piezoelectricity even in a thin film thickness and to establish a manufacturing method thereof. .

  However, it has not been possible to realize a small piezoelectric element and ink head having characteristics necessary for sufficient ink ejection by using a thin piezoelectric body as described above. In particular, in the piezoelectric material of the sintered body that has been used conventionally, the element has been miniaturized by mechanical processing such as cutting, but there is a limit to miniaturization in mechanical processing, leading to deterioration of piezoelectric characteristics, It was difficult to achieve both miniaturization and high resolution.

  The present invention solves the problem of the piezoelectric element in such a conventional ink jet recording apparatus, and fine processing generally used in a semiconductor process by thinning a piezoelectric body or a diaphragm constituting the piezoelectric element. The object is to develop a thin film material having a large piezoelectric characteristic even when the film thickness is thin, and to provide a manufacturing method for realizing a multi-element nozzle structure of 2000 dpi. .

  In order to achieve the above object, an ink jet recording apparatus manufacturing method according to the present invention forms an electrode on an MgO substrate, and forms a lead-based dielectric layer that is an oxide dielectric containing lead on the electrode. . An electrode is further formed on the lead-based dielectric layer, and a voltage is applied in the thickness direction of the lead-based dielectric layer. Further, a material made of a metal, an oxide, or a polymer organic material is formed on the electrode as a vibration plate by sputtering, vacuum deposition, plating, or spin coating. Next, all or a part of the MgO substrate is removed by etching, and a pressure chamber for containing ink liquid is formed on the vibration plate with resin or glass, and pressure for applying pressure to the pressure chamber is formed. This is a method of manufacturing an ink jet recording apparatus that realizes multi-elements by producing an applying means.

  Further, platinum or ruthenium oxide is used as an electrode formed on the MgO substrate, a PZT ferroelectric having a film thickness of 20 μm or less is formed as a lead dielectric by sputtering, and a Zr / Ti ratio is 30/70. To 70/30 or an antiferroelectric thin film in which niobium and tin are added to a PZT ferroelectric, and the diaphragm is nickel, aluminum, alumina, silicon oxide, or polyimide resin Further, a manufacturing method using phosphoric acid as an etching solution for the MgO substrate is preferable.

  Further, as a method of manufacturing the ink jet recording apparatus according to the present invention, an electrode is formed on a silicon or glass substrate, and a layer made of a lead-based dielectric is formed on the electrode. An electrode is further formed on the lead-based dielectric layer, and a material made of a metal, an oxide, or a polymer organic material is formed on the electrode as a vibration plate by sputtering, vacuum deposition, plating, or spin coating. Next, a pressure chamber for containing the ink liquid is formed on the vibration plate with resin or glass, and all or part of the silicon or glass substrate is formed with a hydrofluoric acid solution or a potassium hydroxide solution. A method of manufacturing an ink jet recording apparatus, comprising: producing pressure applying means for applying pressure to the pressure chamber by etching and removing.

  In addition, as a method for manufacturing the ink jet recording apparatus according to the present invention, a material made of metal, oxide, nitride, or polymer organic substance is formed on a silicon or glass substrate as a diaphragm, and an electrode is formed thereon, Further, a lead-based dielectric is formed on the electrode, and an electrode is further formed on the lead-based dielectric layer. Further, a part of the silicon or glass substrate is etched using a hydrofluoric acid solution or a potassium hydroxide solution to form a pressure chamber for containing an ink liquid using the silicon or glass substrate. This is a method for manufacturing an ink jet recording apparatus.

  Furthermore, platinum or ruthenium oxide is used as an electrode formed on silicon or a glass substrate, a PZT ferroelectric having a film thickness of 20 μm or less is formed by sputtering as a lead dielectric, and the Zr / Ti ratio is 30. The production method is preferably an antiferroelectric thin film having a thickness in the range of / 70 to 70/30, or a PZT ferroelectric material with niobium and tin added.

  As described above, in order to improve the resolution of the ink jet recording apparatus, the present invention uses a thin film formation process to reduce the thickness of a lead-based dielectric layer such as PZT while maintaining high piezoelectric characteristics, and finely process them. Accordingly, it is possible to form a piezoelectric element for an ink jet recording apparatus having a low voltage and good ink discharge capability.

  Embodiments of the present invention will be described below with reference to the drawings.

(First embodiment)
FIG. 1A is a cross-sectional view of a nozzle head as viewed from the side in the ink jet recording apparatus according to the first embodiment of the present invention, and FIG.

  In FIG. 1, a nozzle head according to the present embodiment includes a pressure chamber 1 that contains ink, a discharge port 2 that discharges ink, a piezoelectric element 3 that communicates with the discharge port 2 and applies pressure to the pressure chamber 1. And a diaphragm 4 that vibrates with the piezoelectric element 3. 1 is a cross-sectional view, and a plurality of pressure chambers 1 separated by partition walls are arranged in a direction perpendicular to the cross section, and the number of discharge ports 2 and piezoelectric elements 3 are the same as the number of pressure chambers 1. Are lined up in the same way.

The pressure chamber 1 is composed of a photosensitive organic polymer material, photosensitive glass, silicon, and the like. The upper part of the pressure chamber 1 is formed by a diaphragm 4. The diaphragm 4 is composed of a SiO ₂ layer. A piezoelectric element 3 is formed on the vibration plate 4, and electrodes are arranged on the piezoelectric element 3 at the top and bottom although not shown.

  Here, in the present embodiment, a perovskite type dielectric thin film containing lead is effective as a piezoelectric body forming the piezoelectric element 3 because of its excellent piezoelectricity, and even a thickness of 20 μm or less is sufficient. It had piezoelectric properties. Further, by setting the thickness of the piezoelectric body to 20 μm or less, in addition to being able to form the piezoelectric body by a thin film process and performing fine processing, the piezoelectric element 3 can be processed even with a width of about 10 μm. Therefore, as shown in FIG. 1B, the nozzles can be arranged in a line with a width of about 10 μm, so that the printing resolution can be improved and the printing speed can be further improved.

FIG. 2 is a diagram showing the configuration of the piezoelectric element 3 in detail. As the diaphragm 4 facing the pressure chamber 1, a SiO ₂ layer having a vibration part thickness of 2 μm and a PZT thin film having a thickness of 3 μm represented by the composition formula of Pb (Zr _0.5 Ti _0.5 ) O ₃ were used as the piezoelectric body 5. Electrodes 6 and 7 made of platinum having a thickness of 0.1 μm are formed above and below the piezoelectric body 5. The thinner the piezoelectric body 5 is, the easier microfabrication is possible, and the drive voltage can be lowered. The thickness of the silicon diaphragm 4 is also 2 μm, which is good even at a voltage of 50 V or less. A flexural vibration could be generated. In addition, the microfabrication of PZT thin film is performed using a strongly acidic solution such as hydrofluoric acid or nitric acid. By using platinum or gold as the electrode 6 or 7, the electrode material is prevented from being corroded, and the device can be stably formed. Could be done. As a material of the diaphragm 4, even when a metal such as nickel, chromium, and aluminum is deposited or plated in addition to SiO ₂ , there is no deterioration such as cracking during vibration, and ink is ejected. Sufficient vibration could be generated. Similar vibration characteristics could be obtained even with oxides of these metals as the material of the diaphragm 4. As the diaphragm 4, it is possible to obtain the same vibration effect even with an organic polymer material such as polyimide. By using photosensitive polyimide, it was possible to easily make an element.

By using a perovskite PZT thin film material, which is an oxide composed of lead, titanium, and zirconium, as the material of the piezoelectric body 5, good vibrations could be generated even at a low voltage. The composition of this PZT thin film is said to exhibit the maximum piezoelectricity in the case of Pb (Zr _0.53 Ti _0.47 ) O ₃ , but it is not easy to form a thin film of this composition directly on the substrate. Therefore, when PbTiO ₃ not containing Zr or PLT in which lanthanum is added to PbTiO ₃ is formed as the first layer and a two-layer structure of Pb (Zr _0.53 Ti _0.47 ) O ₃ is formed as the second layer, It was easy to form a quality piezoelectric thin film, and better piezoelectric properties could be obtained. FIG. 3 shows a cross-sectional structure of the multilayered piezoelectric material. The PbTiO ₃ layer 8 having a thickness of 0.1 μm was used as the first layer, and the PZT layer 9 having a composition of Pb (Zr _0.53 Ti _0.47 ) O ₃ having a thickness of 2.9 μm was used as the second layer. By using this two-layered piezoelectric body 5, an ink jet recording apparatus having sufficient ink discharge capability even at a low voltage could be produced. In addition, the same effect was obtained even in the piezoelectric body 5 composed of a layer having a composition gradient continuously from PbTiO ₃ to a composition in the vicinity of Pb (Zr _0.5 Ti _0.5 ) O ₃ without using such a multilayer structure. .

(Second Embodiment)
FIG. 4 is a diagram for explaining a method of manufacturing a piezoelectric element and a pressure chamber according to the second embodiment of the present invention.

In FIG. 4, first, a Pt layer to be the individual electrode 11 was formed on the (100) plane of the MgO substrate 10, and a lead-based dielectric layer 12 was formed on the individual electrode 11 as a piezoelectric material by rf sputtering. As the lead-based dielectric layer 12, piezoelectricity can be obtained as long as it is a single crystal layer oriented in the c-axis direction of a PZT system having a thickness of 3 μm. By using rf sputtering as a method for forming the lead-based dielectric layer 12, a PZT thin film with good crystallinity oriented in the c-axis direction on the (100) MgO substrate 10 could be formed. Further, although there is a Pt individual electrode 11 on the surface of the MgO substrate 10, a PbTiO ₃ layer not containing Zr is formed as a first layer with a very thin thickness of about 0.01 μm without directly depositing PZT on the surface. Thus, a single crystal PZT thin film can be formed. In addition to the rf sputtering method as a method for forming the lead-based dielectric layer 12, a piezoelectric thin film having good crystallinity could be formed by MOCVD or spin coating using a sol-gel solution. Next, a Pt layer to be the common electrode 13 is formed on the lead-based dielectric layer 12. The diaphragm 4 is formed on the common electrode 13 by a sputtering method using a material made of SiO ₂ . In the diaphragm 4, the lead-based ferroelectric layer 12 corresponding to the individual electrode 11 vibrates, and this vibration is amplified by the diaphragm 4. Good vibration characteristics were obtained when the thickness of the diaphragm under the individual electrode 11 was 2 μm. Next, the structure of the pressure chamber 1 is formed on the vibration plate 4 with a photosensitive resin 14 or the like, and finally the MgO substrate 10 is removed by etching with an acidic solution. The individual electrodes 11 are patterned before the formation of the lead-based dielectric layer 12 or after the MgO substrate 10 is removed by etching. The lead-based dielectric layer 12 is patterned before the common electrode 13 is formed. Alternatively, the common electrode 13 was formed and the MgO substrate 10 was etched and then patterned using a strongly acidic solution so as to have a divided shape corresponding to each pressure chamber 1. FIG. 5 shows an ink head forming method in the present invention. (a) is a method of forming an electrode pattern at the beginning of the individual electrode 11, and (b) is a method of forming the pattern of the individual electrode 11 after the MgO substrate 10 is removed by etching at the end of the process.

  According to the manufacturing method shown in this embodiment mode, a thin film material having good piezoelectric characteristics can be formed, and further, a multi-element can be formed by applying a semiconductor microfabrication technique. FIG. 6 shows a front view of the nozzle head of the ink jet recording apparatus manufactured by the above method. The produced head is a head in which nozzles are formed at a density of 2000 dpi.

In the manufacture of the ink jet recording apparatus having this configuration, the lead-based dielectric layer 12 having a perovskite structure could be formed with good crystallinity by using platinum or ruthenium oxide as the individual electrode 11 on the MgO substrate 10. The piezoelectric characteristics can be improved by improving the crystallinity, and even when the number of elements is increased, the variation in the ink discharge ability between elements can be reduced. Further, as the lead-based dielectric layer 12 used as the piezoelectric material, if it is a PZT layer having a Zr / Ti ratio in the range of 30/70 to 70/30, even better piezoelectric characteristics were obtained. A PZT thin film having a Zr / Ti ratio of 50/50 is used as a lead-based dielectric layer 12 and is patterned to have a width of 10 μm and a length of 1 mm corresponding to each pressure chamber 1. The relationship of the maximum deflection amount of the plate 4 is shown in FIG. As shown in the figure, when the applied voltage was increased, the diaphragm was able to generate a displacement of about 2 μm with respect to the voltage of deflection of 30V. By utilizing this good piezoelectric characteristic, an ink jet recording apparatus having a high ink discharge capability could be obtained. In addition, an antiferroelectric thin film having a composition of Pb _0.99 Nb _0.02 [(Zr _0.6 Sn _0.4 ) _1-y Ti _y ] _0.98 O ₃ (0.060 ≦ y ≦ 0.065) was used as the lead-based dielectric layer 12. The relationship between the applied voltage and the maximum displacement of the diaphragm 4 is shown in FIG. In this case, a phase transition from antiferroelectric to ferroelectric occurred at a voltage of 15 V, so that discontinuous displacement characteristics were exhibited, and a displacement of about 0.8 μm occurred at 20 V. As a result, when a certain voltage or more is applied, a substantially constant displacement can be generated, and variations in the ink discharge amount can be reduced. Furthermore, the antiferroelectric thin film having a composition of Pb _0.99 Nb _0.02 [(Zr _0.6 Sn _0.4 ) _1-y Ti _y ] _0.98 O ₃ (0.060 ≦ y ≦ 0.065) is stable even in a polycrystalline thin film. It was possible to obtain a piezoelectric element having

Further, the diaphragm 4 can be easily finely processed by using a thin film process such as a sputtering method. As the material, metals such as nickel oxide and aluminum, as well as silicon oxide SiO ₂ , could be easily formed by sputtering, vacuum deposition, and plating, and good vibration characteristics could be obtained as with SiO ₂ . Alumina can also achieve the same effect as SiO ₂ and can be easily formed by sputtering. In addition, the polyimide resin can be easily formed by a spin coating method, and its microfabrication is easy, and is a material suitable as a diaphragm for an ink jet recording apparatus. The lead-based dielectric layer 12 obtained by a thin film process such as sputtering is formed on the MgO substrate 10, but is finally removed by an acidic solution. By using a phosphoric acid solution as the acidic solution, MgO could be stably dissolved, and an ink jet recording apparatus could be produced without damaging the piezoelectric body.

(Third embodiment)
FIG. 9 is a diagram for explaining a method of manufacturing a piezoelectric element and a pressure chamber according to the third embodiment of the present invention.

In FIG. 9, first, a Pt layer to be the individual electrode 11 was formed on the silicon substrate 15, and a lead-based dielectric layer 12 was formed as a piezoelectric material on the individual electrode 11 by sputtering. As the lead-based dielectric layer 12, it is possible to obtain piezoelectricity as long as it is a PZT-based polycrystalline layer having a thickness of 3 μm. A piezoelectric thin film having good crystallinity could also be formed by spin coating using MOCVD or sol-gel solution as a method of forming the lead-based dielectric layer 12. Next, a Pt layer to be the common electrode 13 is formed on the lead-based dielectric layer 12. The diaphragm 4 is formed on the common electrode 13 by a sputtering method using a material made of SiO ₂ . Next, the structure of the pressure chamber 1 is formed on the vibration plate 4 with the photosensitive resin 14, and finally the silicon substrate 15 is removed by etching with a hydrofluoric acid solution or a potassium hydroxide solution. The pressure chamber 1 is divided and formed into multiple elements using photosensitive glass or photosensitive resin. The individual electrodes 11 are patterned before the lead-based dielectric layer 12 is formed or after the silicon substrate 15 is etched. The lead-based dielectric layer 12 is patterned before the common electrode 13 is formed. Alternatively, after the silicon substrate 15 is removed by etching, the silicon substrate 15 is patterned so as to be divided into the pressure chambers 1. An example of the manufacturing method of a present Example is shown in FIG. According to the manufacturing method shown in the present embodiment, it is possible to use the silicon substrate 15 which is cheaper than the MgO substrate 6 and is easily available as a single crystal substrate having a large area, and a large number of piezoelectric elements for inkjet are formed at a time. It is possible to form a thin film material with better piezoelectric characteristics. In addition, application of silicon microfabrication technology that has been established so far makes it easy to increase the number of elements produced from very high precision micromachining. The inkjet head manufactured by the above method can have the same configuration as in FIG. 6, and the nozzles can be formed to a density of 2000 dpi.

  In the manufacture of the ink jet recording apparatus having this configuration, an ink jet recording apparatus having the same multi-element configuration could be manufactured using a glass substrate in addition to using the silicon substrate 15. In this case, by etching the glass substrate using a hydrofluoric acid-based solution, a multi-element ink jet recording apparatus having the same configuration as that shown in FIG. 5 could be formed.

By using ruthenium oxide in addition to platinum as the individual electrode 11, the lead-based dielectric layer 12 having a perovskite structure could be formed with good crystallinity. For this reason, it is possible to produce an ink jet recording apparatus that can have excellent characteristics as a piezoelectric body and has little variation in the ink discharge capability between elements even when the number of elements is increased. Further, as the lead-based dielectric layer 12 used as the piezoelectric material, if it is a PZT layer having a Zr / Ti ratio in the range of 30/70 to 70/30, it has even better piezoelectric characteristics and has an ink ejection capability. A high inkjet recording apparatus could be obtained. In the case where an antiferroelectric thin film having a composition of Pb _0.99 Nb _0.02 [(Zr _0.6 Sn _0.4 ) _1-y Ti _y ] _0.98 O ₃ (0.060 ≦ y ≦ 0.065) is used as the lead-based dielectric layer 12 Thus, a stable response to voltage application can be obtained, and variations in ink discharge amount can be reduced.

As a further material of the vibrating plate 4, another silicon oxide SiO _2, nickel, a metal such as aluminum is also sputtering, can be readily formed by vacuum deposition and plating, to obtain a similar favorable vibration characteristics and SiO ₂ did it. Also, oxides such as alumina can obtain the same effect as SiO ₂ and can be easily formed by sputtering. In addition, a polymer organic material such as a polyimide resin can be easily formed by a spin coating method and can be easily processed, and is a material suitable as a diaphragm of an ink jet recording apparatus.

(Fourth embodiment)
FIG. 11 is a diagram for explaining a method of manufacturing a piezoelectric element and a pressure chamber according to the fourth embodiment of the present invention.

In FIG. 11, first, a diaphragm 4 made of SiO ₂ having a thickness of 2 μm is formed on a silicon substrate 15 by sputtering. Further, a Pt layer to be the common electrode 13 is formed thereon. A lead-based dielectric layer 12 was formed as a piezoelectric material on the individual electrode 13 by rf sputtering. As the lead-based dielectric layer 12, piezoelectric characteristics can be obtained as long as it is a PZT-based polycrystalline layer having a thickness of 3 μm. A piezoelectric thin film having good crystallinity could also be formed by spin coating using MOCVD or sol-gel solution as a method of forming the lead-based dielectric layer 12. Next, a Pt layer to be the individual electrode 11 is formed on the lead-based dielectric layer 12. The individual electrode 11 was finely processed by ion etching so as to have a shape separated into portions corresponding to the pressure chambers 1. When the diaphragm 4 is an insulator, the individual electrode 11 may be formed on the diaphragm 4 and the common electrode 13 may be formed on the lead-based dielectric layer 4. Next, the silicon substrate 15 was partially etched away with a hydrofluoric acid solution or a potassium hydroxide solution, and a part of the silicon substrate 15 was used as a structural member of the pressure chamber 1. The lead-based dielectric layer 12 was patterned to have a divided shape corresponding to each pressure chamber 1 before forming the common electrode 13. An example of the manufacturing method shown in this embodiment mode is shown in FIG. In this method, since the pressure chamber 1 is formed by using a part of the substrate on which the piezoelectric element is formed, the process can be simplified, and a fine element can be formed by using a silicon microfabrication technique. The inkjet head manufactured by the above method can have the same configuration as in FIG. 6, and the nozzles can be formed to a density of 2000 dpi.

  In the production of the ink jet recording apparatus having this configuration, an ink jet recording apparatus having the same multi-element configuration could be manufactured by using a silicon substrate 15 or using an inexpensive glass substrate. In this case, by etching the glass substrate 13 using a hydrofluoric acid-based solution, a multi-element ink jet recording apparatus having the same configuration as in FIG. 6 could be formed.

By using ruthenium oxide in addition to platinum as the individual electrode 11, the lead-based dielectric layer 12 having a perovskite structure could be formed with good crystallinity. For this reason, it is possible to produce an ink jet recording apparatus that can have excellent characteristics as a piezoelectric body and has little variation in the ink discharge capability between elements even when the number of elements is increased. Further, as the lead-based dielectric layer 12 used as the piezoelectric material, if it is a PZT layer having a Zr / Ti ratio in the range of 30/70 to 70/30, it has even better piezoelectric characteristics and has an ink ejection capability. A high inkjet recording apparatus could be obtained. In the case where an antiferroelectric thin film having a composition of Pb _0.99 Nb _0.02 [(Zr _0.6 Sn _0.4 ) _1-y Ti _y ] _0.98 O ₃ (0.060 ≦ y ≦ 0.065) is used as the lead-based dielectric layer 12 Thus, a stable response to voltage application can be obtained, and variations in ink discharge amount can be reduced. In addition, the antiferroelectric thin film having the composition of Pb _0.99 Nb _0.02 [(Zr _0.6 Sn _0.4 ) _1-y Ti _y ] _0.98 O ₃ (0.060 ≦ y ≦ 0.065) has a stable ink ejection capability even with a polycrystalline thin film. It was possible to obtain a piezoelectric element having

As a further material of the vibrating plate 4, another silicon oxide SiO _2, nickel, a metal such as aluminum is also sputtering, can be readily formed by vacuum deposition and plating, to obtain a similar favorable vibration characteristics and SiO ₂ did it. Alumina can also achieve the same effect as SiO2, and can be easily formed by sputtering. In addition, the polyimide-based resin can be easily formed by a spin coating method and can be easily processed, and is a material suitable as a diaphragm for an ink jet recording apparatus.

  The present invention is useful for an ink jet recording apparatus.

The figure which shows the cross section which looked at the head of the inkjet recording device in one Example of this invention from the side, and the general | schematic figure of a head The figure which expanded the cross section of the head of the inkjet recording device in one Example of this invention The figure which shows the structure of the piezoelectric element of the inkjet recording device in one Example of this invention. The figure which shows the manufacturing method of the piezoelectric element and pressure chamber of the inkjet recording device in one Example of this invention The figure which shows the manufacturing process of the inkjet recording device in one Example of this invention. The figure which looked at the nozzle head manufactured by the manufacturing method of the inkjet recording device in one Example of this invention from the front The figure which shows the relationship between the applied voltage in the piezoelectric element of the inkjet recording device in one Example of this invention, and the maximum displacement amount of a diaphragm. The figure which shows the relationship between the applied voltage in the piezoelectric element of the inkjet recording device in one Example of this invention, and the maximum displacement amount of a diaphragm. The figure which shows the manufacturing method of the inkjet recording device in one Example of this invention The figure which shows the manufacturing process of the inkjet recording device in one Example of this invention. The figure which shows the manufacturing method of the inkjet recording device in one Example of this invention The figure which shows the manufacturing process of the inkjet recording device in one Example of this invention.

Explanation of symbols

1 Pressure Chamber 2 Discharge Port 3 Piezoelectric Element 4 Diaphragm 5 Lead-Based Dielectric Layer 6 Common Electrode 7 Individual Electrode 8 PbTiO ₃
9 PZT
10 MgO substrate 11 Individual electrode 12 Lead-based dielectric layer 13 Common electrode 14 Photosensitive resin 15 Silicon substrate

Claims (10)

Forming an electrode on any one of an MgO substrate , a silicon substrate, and a glass substrate, forming a lead-based dielectric layer on the electrode, and further forming a second electrode on the lead-based dielectric layer; After the diaphragm is formed on the second electrode , all or a part of any one of the MgO substrate , the silicon substrate, and the glass substrate is removed, and ink liquid is stored on the diaphragm. Manufacturing method for forming an ink jet recording apparatus. 2. The method of manufacturing an ink jet recording apparatus according to claim 1, wherein the lead-based dielectric is formed by a sputtering method. 2. The method of manufacturing an ink jet recording apparatus according to claim 1, wherein when an MgO substrate is used as the substrate, phosphoric acid is used as an etching solution for the MgO substrate. 4. The ink jet recording according to claim 3 , wherein when a silicon substrate or a glass substrate is used as the substrate, the silicon substrate or the glass substrate is removed by etching using a hydrofluoric acid solution or a potassium hydroxide solution. Device manufacturing method. A first step of preparing a substrate, a second step of forming a first electrode, a second electrode, a lead-based dielectric layer, and a diaphragm on the substrate; and after the second step, And a third step of removing all or part of the substrate. 6. The method of manufacturing an ink jet recording apparatus according to claim 5 , wherein after the third step, a pressure chamber for containing ink liquid is formed on the diaphragm. 6. The method of manufacturing an ink jet recording apparatus according to claim 5 , wherein in the third step, a pressure chamber for containing the ink liquid is formed by removing a part of the substrate. In the second step, a first electrode is formed on a substrate, a lead-based dielectric layer is formed on the first electrode, a second electrode is formed on the lead-based dielectric layer, 6. The method of manufacturing an ink jet recording apparatus according to claim 5, wherein the method is performed by forming a diaphragm on the second electrode. In the second step, a diaphragm is formed on a substrate, a first electrode is formed on the diaphragm, a lead-based dielectric layer is formed on the first electrode, and the lead-based dielectric layer is formed. 6. The method for manufacturing an ink jet recording apparatus according to claim 5, wherein the method is performed by forming a second electrode thereon. 6. The method of manufacturing an ink jet recording apparatus according to claim 5 , wherein the substrate is an MgO substrate, a silicon substrate, or a glass substrate.

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