JP3654199B2 - Manufacturing method of semiconductor device - Google Patents

Manufacturing method of semiconductor device Download PDF

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Publication number
JP3654199B2
JP3654199B2 JP2001051813A JP2001051813A JP3654199B2 JP 3654199 B2 JP3654199 B2 JP 3654199B2 JP 2001051813 A JP2001051813 A JP 2001051813A JP 2001051813 A JP2001051813 A JP 2001051813A JP 3654199 B2 JP3654199 B2 JP 3654199B2
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Japan
Prior art keywords
semiconductor
semiconductor element
semiconductor device
reinforcing member
electrode
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JP2002252308A (en
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宏 土師
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Panasonic Corp
Panasonic Holdings Corp
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Panasonic Corp
Matsushita Electric Industrial Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/75—Apparatus for connecting with bump connectors or layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress
    • H01L2924/3511—Warping

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Dicing (AREA)

Description

【０００１】
【発明の属する技術分野】
本発明は、半導体素子の電極形成面の裏面に接着材により補強部材を接合して成る半導体装置の製造方法に関するものである。
【０００２】
【従来の技術】
電子機器の基板などに実装される半導体装置は、ウェハ状態で回路パターン形成が行われた半導体素子にリードフレームのピンや金属バンプなどを接続するとともに樹脂などで封止するパッケージング工程を経て製造されている。最近の電子機器の小型化に伴って半導体装置の小型化も進み、中でも半導体素子を薄くする取り組みが活発に行われている。
【０００３】
薄化された半導体素子は外力に対する強度が弱くハンドリング時のダメージを受けやすいことから、従来より薄化された半導体素子を用いた半導体装置は、半導体素子を補強のための樹脂層で封止する構造が一般的である。
【０００４】
【発明が解決しようとする課題】
しかしながら、樹脂層で封止されたウェハ状態の半導体素子を素子毎に分離する工程においては、薄化された半導体素子はきわめて脆いため切断時にダメージを受けやすく、加工歩留まりの低下が避けられないという問題点がある。そしてこの問題は半導体素子が薄化するほど顕著である。
【０００５】
そこで本発明は、切断時のダメージを排除して加工歩留まりを向上させることができる半導体装置の製造方法を提供することを目的とする。
【０００６】
【課題を解決するための手段】
請求項１記載の半導体装置の製造方法は、半導体素子の外部接続用の電極が形成された電極形成面の裏面に低弾性係数の樹脂接着材を介して補強部材を接合して成る半導体装置を製造する半導体装置の製造方法であって、複数の半導体素子が形成された半導体ウェハを電極形成面にシートが貼着された状態で半導体素子毎に分離する素子分離工程と、素子分離工程後の前記半導体素子の裏面に伸縮する材質を有する樹脂接着材を介して補強部材を接合する補強部材接合工程と、補強部材接合工程後の前記半導体素子の電極形成面に金属バンプを形成するバンプ形成工程と、バンプ形成工程後に前記補強部材を切断することにより個片の半導体装置に分離する半導体装置分離工程とを含む。
【０００７】
請求項２記載の半導体装置の製造方法は、請求項１記載の半導体装置の製造方法であって、前記素子分離工程後に、前記シートを延伸させることにより半導体素子相互の間隔を拡げる。
【００１０】
本発明によれば、薄化された半導体素子の電極形成面の裏面に接着材により補強部材を接合して成る半導体装置の製造において、半導体ウェハを半導体素子毎に分離する素子分離工程後に半導体素子の裏面に伸縮する材質を有する樹脂接着材を介して補強部材を接合することにより、半導体素子にダメージを与えることなく半導体装置を製造することができる。
【００１１】
【発明の実施の形態】
次の本発明の実施の形態を図面を参照して説明する。図１、図２、図３、図４、図５は本発明の一実施の形態の半導体装置の製造方法の工程説明図、図６は本発明の一実施の形態の半導体装置の実装構造の断面図である。
【００１２】
図１（ａ）において、１は複数の半導体素子が形成された半導体ウェハである。半導体ウェハ１の上面には、外部接続用の電極２が形成されている。半導体ウェハ１の下面には保護用のシート３が貼着され、図１（ｂ）に示すようにシート３で保持された状態で半導体ウェハ１のダイシングが行われ、各半導体素子１’の境界にはダイシング溝１ａが形成される。これにより半導体ウェハ１は、個別の半導体素子１’に分離される（素子分離工程）。
【００１３】
次いでこの状態で各半導体素子１’の電極形成面には、図１（ｃ）に示すように薄化工程での補強用のシート４が貼着される。シート４はリング状のシートフレーム８（図２参照）に装着されており、ダイシング後の半導体素子１’に粘着層４ａを介して貼着される。この後各半導体素子１’の電極形成面からダイシング時の保護用のシート３が剥離され、シート４によって補強された状態で各半導体素子１’の電極形成面の裏面の薄化が一括して行われる。薄化加工手段としては、砥石を用いた研磨装置や、ドライエッチング装置によるエッチング、さらには薬液の化学反応を利用してエッチングを行うものがある。これにより、個別に分離された半導体素子１’は、図１（ｄ）に示すように約５０μｍの厚さｔまで薄化される（薄化工程）。
【００１４】
次に、薄化された半導体素子１’の下面へのバンパ板６の貼着が行われる。この貼着作業は、貼着ツール５ｂ、ホルダ５ａ、下受け部材５ｃを備えたバンパ貼着装置５を用いて行われる。図２（ａ）に示すように、半導体素子１’が貼着されたシート４を装着したシートフレーム８をホルダ５ａに保持させる。貼着ツール５ｂの下面にはバンパ板６が保持されており、バンパ板６の下面には接着材７が塗布されている。バンパ板６は、樹脂やセラミックあるいは金属などの材質を板状に形成した補強部材である。また接着材７は低弾性係数の樹脂接着材であり、エラストマーなど接合状態における弾性係数が小さく、小さな外力で容易に伸縮する材質が用いられる。
【００１５】
このバンパ板６は、各半導体素子１’毎に切り分けられて半導体装置を形成した状態で、半導体装置のハンドリング用の保持部として機能すると共に、半導体素子１’を外力や衝撃から保護する補強部材としての役割をも有するものである。このためバンパ板６は、半導体素子１’の曲げ剛性よりも大きな曲げ剛性を有する充分な厚さとなっている。
【００１６】
この後、図２（ｂ）下受け部材５ｃを上昇させてシートフレーム８に装着されたシート４を下方から下受けする。このとき、下受け部材５ｃはシート４を上方に幾分持ち上げる高さまで上昇する。これにより、シート４には水平方向の張力が作用して延伸され、図２（ｃ）に示すようにシート４に貼着された各半導体素子１’の間隔Ｓが拡大される。なお、下受け部材５ｃで持ち上げてシート４に張力を作用させる替わりに、シート４の端部を挟み込んで水平方向に引っ張ることにより、シート４に直接水平方向の張力を作用させるようにしてもよい。
【００１７】
次にこのようにしてシートフレーム８に保持された状態の半導体素子１’に対して、バンパ板６が一括して接合される。図２（ｄ）に示すように、バンパ板６を保持した貼着ツール５ｂを半導体素子１’に対して下降させ、接着材７を半導体素子１’に対して押し付ける。これにより、バンパ板６は各半導体素子１’に接合される（補強部材接合工程）。
【００１８】
この後図３（ａ）に示すように貼着ツール５ｂを上昇させ、そして接着材７が固化して接合が完了したならば、バンパ板６に接合された状態の半導体素子１’は、シート４から剥離される。すなわち図３（ｂ）、（ｃ）に示すように、シートフレーム８を下降させてシート４を半導体素子１’の電極形成面から剥離させることにより、図３（ｄ）に示すように、バンパ板６に接着材７を介して接合された状態の半導体素子１’が得られる。この状態では、電極形成面の電極２が半導体素子１’の上面に露呈する。これらの半導体素子１’は、以下に説明するバンプ形成工程に送られる。
【００１９】
図４（ａ）において、半導体素子１’が接合されたバンパ板６は、ボール搭載装置１０の載置テーブル１１上に載置される。ボール搭載装置１０は、バンパ板６を載置する載置テーブル１１、半田ボール１２を供給するボール供給部１３、フラックス１４を膜状で供給するフラックス供給部１５および半田ボール１２を搭載する搭載ヘッド１６を備えている。
【００２０】
まずバンパ板６が載置テーブル１１に保持されたならば、搭載ヘッド１６はボール供給部１３から半田ボール１２を吸着保持し、次に図４（ｂ）に示すようにフラックス供給部１５に移動して、保持した半田ボール１２にフラックス１４を塗布する。そしてこの後図４（ｃ）に示すように、搭載ヘッド１６は載置テーブル１１上に移動し、ここで上下動することにより図４（ｄ）に示すように保持した半田ボール１２を、各半導体素子１’の電極２（図１参照）上に搭載する。
【００２１】
この後、各半導体素子１’はバンパ板６に接着された状態でリフロー工程に送られ、図５（ａ）に示すように加熱炉１７内に導入される。そしてここでリフロー温度まで加熱されることにより半田ボール１２が溶融し、電極２上で冷却固化することにより、図５（ｂ）に示すように各半導体素子１’の電極２上に半田バンプ１２’が形成される。なお半田バンプ形成工程における電極２への半田の供給方法として、電極２上に半田ボール１２を搭載する替わりに、電極２上にクリーム半田を印刷する方法を用いてもよい。
【００２２】
この後、図５（ｃ）に示すようにバンパ板６は再びシートフレーム８’のシート４’に貼着され保持される。そしてシート４’によって保持されたバンパ板６に対してダイシングが行われる。すなわち図５（ｄ）に示すようにバンパ板６を各半導体素子１’毎のバンパ部材６’に分離して、個片の半導体装置９とする（半導体装置分離工程）。
【００２３】
この半導体装置分離工程におけるバンパ板６のダイシングに際し、図５（ｅ）に示すように半導体素子１’相互の間隔Ｓは、図２（ｂ）、（ｃ）に示すシート４’の延伸によって半導体ウェハ１のダイシング時のダイシング幅ｂよりも拡大されていることから、バンパ板６の切断時に半導体素子１’へのダメージが生じることがなく、加工歩留まりに優れたダイシングを行うことができる。
【００２４】
そして、接着材７によって半導体素子１’と接着されたバンパ部材６’をシート４’から剥離することにより、個片の半導体装置９が完成する。この半導体装置９は、図６（ａ）に示すように外部接続用の電極に半田バンプ１２’が形成された半導体素子１’と、この半導体素子１’の電極形成面の裏面に低弾性係数を有する接着材７により接合された補強部材としてのバンパ部材６’とを備えた構成となっている。
【００２５】
ここでバンパ部材６’のサイズＢ２は、上述のように半導体ウェハ１のダイシング幅ｂよりも半導体素子１’相互の間隔Ｓが大きい状態でバンパ板６が接合されていることから、半導体素子１’のサイズＢ１よりも大きく、バンパ部材６’の外周端は、半導体素子１’の外周端よりも外側に突出している。これにより、半導体装置９のハンドリング時において、バンパ部材６’によって半導体素子１’の側面を有効に保護することができる。
【００２６】
この半導体装置９を基板１８に実装した実装構造について説明する。この実装構造は、半導体装置９の電極である半田バンプ１２’を基板１８の電極１８ａに接合することにより半導体装置９が基板１８に固定される形態となっている。図６（ｂ）に示すように、実装後に基板１８に何らかの外力により撓み変形が発生した場合には、半導体素子１’は薄くて撓みやすくしかも接着材７は低弾性係数の変形しやすい材質を用いていることから、基板１８の撓み変形に対して半導体素子１’と接着材７の接着層のみが追従して変形する。これにより、半田バンプ１２’と電極１８ａとの接合部には、基板１８の変形に起因する過大な応力が発生することがなく、接合信頼性に優れた実装構造が実現される。
【００２７】
なお上記実施の形態では、半導体ウェハをダイシングした後に薄化を行う先ダイシングの例を示したが、補強部材接合工程に先立って半導体素子毎に分離する方法であれば、先ダイシング以外であっても本発明を適用することができる。例えば、半導体ウェハを薄化した後に、シートに貼着された状態の半導体ウェハを半導体素子毎に分離する方法であってもよい。
【００２８】
【発明の効果】
本発明によれば、薄化された半導体素子の電極形成面の裏面に接着材により補強部材を接合して成る半導体装置の製造において半導体ウェハを半導体素子毎に分離するウェハ分離工程後に半導体素子の裏面に伸縮する材質を有する樹脂接着材を介して補強部材を接合するようにしたので、極薄に薄化加工された半導体素子を用いる場合にあっても、半導体素子にダメージを与えることなく半導体装置を製造することができる。
【図面の簡単な説明】
【図１】本発明の一実施の形態の半導体装置の製造方法の工程説明図
【図２】本発明の一実施の形態の半導体装置の製造方法の工程説明図
【図３】本発明の一実施の形態の半導体装置の製造方法の工程説明図
【図４】本発明の一実施の形態の半導体装置の製造方法の工程説明図
【図５】本発明の一実施の形態の半導体装置の製造方法の工程説明図
【図６】本発明の一実施の形態の半導体装置の実装構造の断面図
【符号の説明】
１ 半導体ウェハ
１’ 半導体素子
２ 電極
４ シート
６ バンパ板
６’ バンパ部材
７ 接着材
９ 半導体装置
１２’ 半田バンプ[0001]
BACKGROUND OF THE INVENTION
The present invention relates to the production how the semiconductor device formed by bonding a reinforcing member with an adhesive to the back surface of the electrode forming surface of the semiconductor element.
[0002]
[Prior art]
A semiconductor device mounted on a substrate of an electronic device is manufactured through a packaging process in which a lead frame pin or a metal bump is connected to a semiconductor element on which a circuit pattern is formed in a wafer state and sealed with a resin or the like. Has been. Along with the recent miniaturization of electronic devices, the miniaturization of semiconductor devices is also progressing, and in particular, efforts to make semiconductor elements thinner are being actively carried out.
[0003]
Since a thinned semiconductor element is weak against external force and easily damaged during handling, a semiconductor device using a thinned semiconductor element is sealed with a resin layer for reinforcement. The structure is common.
[0004]
[Problems to be solved by the invention]
However, in the process of separating the semiconductor element in the wafer state sealed with the resin layer for each element, the thinned semiconductor element is extremely brittle, and thus is easily damaged during cutting, and a reduction in processing yield is inevitable. There is a problem. This problem becomes more prominent as the semiconductor element becomes thinner.
[0005]
The present invention aims to provide a manufacturing how a semiconductor device capable of improving the processing yield by eliminating damage during cutting.
[0006]
[Means for Solving the Problems]
The method of manufacturing a semiconductor device according to claim 1, wherein a semiconductor device is formed by bonding a reinforcing member to a back surface of an electrode forming surface on which an external connection electrode of a semiconductor element is formed via a low elastic modulus resin adhesive. A method for manufacturing a semiconductor device to be manufactured, comprising: an element separation step for separating a semiconductor wafer formed with a plurality of semiconductor elements for each semiconductor element in a state where a sheet is attached to an electrode forming surface; A reinforcing member joining step for joining a reinforcing member through a resin adhesive having a material that expands and contracts on the back surface of the semiconductor element, and a bump forming step for forming metal bumps on the electrode forming surface of the semiconductor element after the reinforcing member joining step And a semiconductor device separation step of separating the reinforcing member after the bump formation step to separate the semiconductor device into individual semiconductor devices.
[0007]
The method for manufacturing a semiconductor device according to claim 2 is the method for manufacturing a semiconductor device according to claim 1, wherein after the element separation step, the sheet is stretched to widen the interval between the semiconductor elements.
[0010]
According to the present invention, in the manufacture of a semiconductor device in which a reinforcing member is joined to the back surface of the electrode forming surface of a thinned semiconductor element with an adhesive, the semiconductor element is separated after the element separation step of separating the semiconductor wafer for each semiconductor element. A semiconductor device can be manufactured without damaging the semiconductor element by bonding the reinforcing member via a resin adhesive having a material that expands and contracts on the back surface of the semiconductor element.
[0011]
DETAILED DESCRIPTION OF THE INVENTION
Embodiments of the present invention will be described with reference to the drawings. 1, 2, 3, 4, and 5 are process explanatory views of a method of manufacturing a semiconductor device according to an embodiment of the present invention. FIG. 6 is a diagram illustrating a mounting structure of a semiconductor device according to an embodiment of the present invention. It is sectional drawing.
[0012]
In FIG. 1A, reference numeral 1 denotes a semiconductor wafer on which a plurality of semiconductor elements are formed. An electrode 2 for external connection is formed on the upper surface of the semiconductor wafer 1. A protective sheet 3 is attached to the lower surface of the semiconductor wafer 1, and the semiconductor wafer 1 is diced while being held by the sheet 3 as shown in FIG. Is formed with a dicing groove 1a. Thereby, the semiconductor wafer 1 is separated into individual semiconductor elements 1 ′ (element separation step).
[0013]
Next, in this state, a reinforcing sheet 4 in the thinning step is attached to the electrode forming surface of each semiconductor element 1 ′ as shown in FIG. The sheet 4 is mounted on a ring-shaped seat frame 8 (see FIG. 2), and is bonded to the semiconductor element 1 ′ after dicing via an adhesive layer 4a. Thereafter, the protective sheet 3 at the time of dicing is peeled off from the electrode forming surface of each semiconductor element 1 ′, and the back surface of the electrode forming surface of each semiconductor element 1 ′ is thinned in a batch while being reinforced by the sheet 4. Done. Thinning means include a polishing apparatus using a grindstone, etching using a dry etching apparatus, and etching using a chemical reaction of a chemical solution. As a result, the individually separated semiconductor elements 1 ′ are thinned to a thickness t of about 50 μm as shown in FIG. 1D (thinning step).
[0014]
Next, the bumper plate 6 is attached to the lower surface of the thinned semiconductor element 1 ′. This sticking operation is performed using a bumper sticking device 5 including a sticking tool 5b, a holder 5a, and a lower receiving member 5c. As shown in FIG. 2 (a), the seat frame 8 on which the sheet 4 with the semiconductor element 1 'attached is mounted is held by the holder 5a. A bumper plate 6 is held on the lower surface of the sticking tool 5b, and an adhesive 7 is applied to the lower surface of the bumper plate 6. The bumper plate 6 is a reinforcing member in which a material such as resin, ceramic, or metal is formed in a plate shape. The adhesive 7 is a resin adhesive having a low elastic coefficient, and a material such as an elastomer that has a small elastic coefficient in a joined state and that easily expands and contracts with a small external force is used.
[0015]
The bumper plate 6 functions as a holding unit for handling the semiconductor device in a state in which the semiconductor device is formed by being cut for each semiconductor element 1 ′, and also a reinforcing member that protects the semiconductor element 1 ′ from external force and impact. It also has a role. Therefore, the bumper plate 6 has a sufficient thickness having a bending rigidity larger than that of the semiconductor element 1 ′.
[0016]
Thereafter, the lower receiving member 5c in FIG. 2B is raised to receive the seat 4 mounted on the seat frame 8 from below. At this time, the lower receiving member 5c rises to a height at which the seat 4 is lifted somewhat upward. As a result, the sheet 4 is stretched by applying a horizontal tension, and the interval S between the semiconductor elements 1 ′ adhered to the sheet 4 is expanded as shown in FIG. Instead of lifting by the lower receiving member 5c and applying tension to the sheet 4, the end of the sheet 4 may be sandwiched and pulled in the horizontal direction to directly apply the horizontal tension to the sheet 4. .
[0017]
Next, the bumper plate 6 is bonded together to the semiconductor element 1 ′ held in the seat frame 8 in this way. As shown in FIG. 2D, the sticking tool 5b holding the bumper plate 6 is lowered with respect to the semiconductor element 1 ′, and the adhesive 7 is pressed against the semiconductor element 1 ′. Thereby, the bumper plate 6 is joined to each semiconductor element 1 ′ (reinforcing member joining step).
[0018]
Thereafter, as shown in FIG. 3A, when the bonding tool 5b is raised and the bonding material 7 is solidified and the bonding is completed, the semiconductor element 1 ′ bonded to the bumper plate 6 is a sheet. 4 is peeled off. That is, as shown in FIGS. 3B and 3C, the seat frame 8 is lowered and the sheet 4 is peeled off from the electrode forming surface of the semiconductor element 1 ′, so that the bumper as shown in FIG. A semiconductor element 1 ′ in a state of being bonded to the plate 6 via the adhesive 7 is obtained. In this state, the electrode 2 on the electrode formation surface is exposed on the upper surface of the semiconductor element 1 ′. These semiconductor elements 1 ′ are sent to a bump forming process described below.
[0019]
In FIG. 4A, the bumper plate 6 to which the semiconductor element 1 ′ is bonded is placed on the placement table 11 of the ball mounting device 10. The ball mounting apparatus 10 includes a mounting table 11 on which a bumper plate 6 is mounted, a ball supply unit 13 that supplies solder balls 12, a flux supply unit 15 that supplies flux 14 in a film form, and a mounting head on which the solder balls 12 are mounted. 16 is provided.
[0020]
First, if the bumper plate 6 is held on the mounting table 11, the mounting head 16 sucks and holds the solder balls 12 from the ball supply unit 13, and then moves to the flux supply unit 15 as shown in FIG. 4B. Then, the flux 14 is applied to the held solder balls 12. Then, as shown in FIG. 4C, the mounting head 16 moves onto the mounting table 11 and moves up and down here to hold the solder balls 12 held as shown in FIG. It is mounted on the electrode 2 (see FIG. 1) of the semiconductor element 1 ′.
[0021]
Thereafter, each semiconductor element 1 ′ is sent to the reflow process while being bonded to the bumper plate 6, and is introduced into the heating furnace 17 as shown in FIG. Then, the solder ball 12 is melted by being heated up to the reflow temperature, and is cooled and solidified on the electrode 2, whereby the solder bump 12 is formed on the electrode 2 of each semiconductor element 1 ′ as shown in FIG. 'Is formed. As a method of supplying solder to the electrode 2 in the solder bump forming step, a method of printing cream solder on the electrode 2 instead of mounting the solder ball 12 on the electrode 2 may be used.
[0022]
Thereafter, as shown in FIG. 5C, the bumper plate 6 is again adhered and held on the seat 4 ′ of the seat frame 8 ′. Then, dicing is performed on the bumper plate 6 held by the sheet 4 ′. That is, as shown in FIG. 5D, the bumper plate 6 is separated into bumper members 6 ′ for each semiconductor element 1 ′ to form individual semiconductor devices 9 (semiconductor device separation step).
[0023]
When dicing the bumper plate 6 in this semiconductor device separation step, as shown in FIG. 5E, the distance S between the semiconductor elements 1 ′ is changed by stretching the sheet 4 ′ shown in FIGS. 2B and 2C. Since the width is larger than the dicing width b at the time of dicing the wafer 1, the semiconductor element 1 ′ is not damaged when the bumper plate 6 is cut, and dicing with excellent processing yield can be performed.
[0024]
Then, the bumper member 6 ′ bonded to the semiconductor element 1 ′ with the adhesive 7 is peeled from the sheet 4 ′, thereby completing the individual semiconductor device 9. As shown in FIG. 6A, the semiconductor device 9 includes a semiconductor element 1 ′ having a solder bump 12 ′ formed on an external connection electrode, and a low elastic modulus on the back surface of the electrode formation surface of the semiconductor element 1 ′. And a bumper member 6 ′ as a reinforcing member joined by an adhesive material 7 having the above.
[0025]
Here, the size B2 of the bumper member 6 ′ is such that the bumper plate 6 is bonded in a state where the distance S between the semiconductor elements 1 ′ is larger than the dicing width b of the semiconductor wafer 1 as described above. The outer peripheral end of the bumper member 6 'protrudes outward from the outer peripheral end of the semiconductor element 1'. Thereby, the side surface of the semiconductor element 1 ′ can be effectively protected by the bumper member 6 ′ when the semiconductor device 9 is handled.
[0026]
A mounting structure in which the semiconductor device 9 is mounted on the substrate 18 will be described. In this mounting structure, the semiconductor device 9 is fixed to the substrate 18 by bonding the solder bumps 12 ′, which are electrodes of the semiconductor device 9, to the electrode 18 a of the substrate 18. As shown in FIG. 6B, when the substrate 18 is bent and deformed by some external force after mounting, the semiconductor element 1 'is thin and easily bent, and the adhesive 7 is made of a material having a low elastic modulus and easily deformed. Since it is used, only the adhesive layer of the semiconductor element 1 ′ and the adhesive 7 is deformed following the bending deformation of the substrate 18. As a result, an excessive stress due to the deformation of the substrate 18 does not occur at the joint between the solder bump 12 'and the electrode 18a, and a mounting structure with excellent joint reliability is realized.
[0027]
In the above-described embodiment, an example of the tip dicing is performed in which the semiconductor wafer is thinned after the semiconductor wafer is diced. However, any method other than the tip dicing may be used as long as the method separates each semiconductor element prior to the reinforcing member joining step. The present invention can also be applied. For example, after thinning a semiconductor wafer, the method of isolate | separating the semiconductor wafer stuck in the sheet | seat for every semiconductor element may be sufficient.
[0028]
【The invention's effect】
According to the present invention, in the manufacture of a semiconductor device in which a reinforcing member is bonded to the back surface of the electrode forming surface of a thinned semiconductor element with an adhesive, the semiconductor element is separated after the wafer separation step for separating the semiconductor wafer for each semiconductor element. Since the reinforcing member is joined via a resin adhesive having a material that expands and contracts on the back surface, even when using a semiconductor element that has been thinned to an extremely thin thickness, the semiconductor element is not damaged. The device can be manufactured.
[Brief description of the drawings]
FIG. 1 is a process explanatory diagram of a semiconductor device manufacturing method according to an embodiment of the present invention. FIG. 2 is a process explanatory diagram of a semiconductor device manufacturing method according to an embodiment of the present invention. FIG. 4 is a process explanatory diagram of a semiconductor device manufacturing method according to an embodiment of the present invention. FIG. 5 is a process explanatory diagram of a semiconductor device manufacturing method according to an embodiment of the present invention. FIG. 6 is a sectional view of a mounting structure of a semiconductor device according to an embodiment of the present invention.
DESCRIPTION OF SYMBOLS 1 Semiconductor wafer 1 'Semiconductor element 2 Electrode 4 Sheet 6 Bumper board 6' Bumper member 7 Adhesive material 9 Semiconductor device 12 'Solder bump

Claims (2)

半導体素子の外部接続用の電極が形成された電極形成面の裏面に低弾性係数の樹脂接着材を介して補強部材を接合して成る半導体装置を製造する半導体装置の製造方法であって、複数の半導体素子が形成された半導体ウェハを電極形成面にシートが貼着された状態で半導体素子毎に分離する素子分離工程と、素子分離工程後の前記半導体素子の裏面に伸縮する材質を有する樹脂接着材を介して補強部材を接合する補強部材接合工程と、補強部材接合工程後の前記半導体素子の電極形成面に金属バンプを形成するバンプ形成工程と、バンプ形成工程後に前記補強部材を切断することにより個片の半導体装置に分離する半導体装置分離工程とを含むことを特徴とする半導体装置の製造方法。A semiconductor device manufacturing method for manufacturing a semiconductor device, wherein a reinforcing member is joined to a back surface of an electrode forming surface on which an electrode for external connection of a semiconductor element is formed via a resin adhesive having a low elastic coefficient. A resin having a material separating process for separating the semiconductor wafer on which the semiconductor element is formed for each semiconductor element in a state where a sheet is adhered to the electrode forming surface, and a material that expands and contracts on the back surface of the semiconductor element after the element separating process A reinforcing member joining step for joining the reinforcing member via an adhesive, a bump forming step for forming a metal bump on the electrode forming surface of the semiconductor element after the reinforcing member joining step, and the reinforcing member is cut after the bump forming step. And a semiconductor device isolation step for separating the semiconductor device into individual semiconductor devices. 前記素子分離工程後に、前記シートを延伸させることにより半導体素子相互の間隔を拡げることを特徴とする請求項１記載の半導体装置の製造方法。2. The method of manufacturing a semiconductor device according to claim 1, wherein after the element separation step, the interval between the semiconductor elements is expanded by stretching the sheet.
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