JP3639063B2 - High frequency switch - Google Patents

High frequency switch Download PDF

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Publication number
JP3639063B2
JP3639063B2 JP26967096A JP26967096A JP3639063B2 JP 3639063 B2 JP3639063 B2 JP 3639063B2 JP 26967096 A JP26967096 A JP 26967096A JP 26967096 A JP26967096 A JP 26967096A JP 3639063 B2 JP3639063 B2 JP 3639063B2
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Japan
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signal
output
outputs
dielectric substrate
microstrip
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JP26967096A
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Japanese (ja)
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JPH10117103A (en
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智徳 重松
憲治 末松
義忠 伊山
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Description

【0001】
【発明の属する技術分野】
この発明はUHF/SHF/EHF帯に適用しアイソレーションを向上する高周波スイッチに関する。
【0002】
【従来の技術】
たとえば文献(D.L.Dunn etal.:Multioctave Multithrow Active Switches、IEEE MTT−SInternational Microwave Symposium Digest、pp.549−551、1987)に示す従来の高周波スイッチは図8のように、バイアス電圧等切換手段による入力端子2からの入力信号に対し、地導体となる筺体1の上面に設ける第1の誘電体基板4上に形成するマイクロストリップ入力線路6を伝搬し、当該入力線路6および第1のマイクロストリップ出力線路7aと7bと7cと7d間を接続し1つの入力と4つの出力を有するSP4T(Single Pole 4−Throw)スイッチ回路5a(当該駆動用バイアスを印加するバイアス回路は図示しない)を介して第1の出力線路7aと7bと7cと7dのいずれか1つを伝搬し、当該第1の出力線路7aと7bと7cと7dおよび出力端子3aと3bと3cと3d間に2段直列に設ける増幅器24を介し出力端子3aと3bと3cと3dのいずれか1つに出力する。
【0003】
上記従来の高周波スイッチは、スイッチ回路による複数の出力線路を同じ誘電体基板上に形成する方式(同一誘電体基板出力線路形成による高周波スイッチ方式)を採る。
【0004】
【発明が解決しようとする課題】
上記のような従来の高周波スイッチでは、同一誘電体基板出力線路形成による高周波スイッチ方式を採るから、スイッチ回路の出力数が多くなると当該周辺に複数の出力線路が密集し隣接出力線路間隔が狭くなり、出力線路間結合によるアイソレーション劣化を生じる問題点があった。
【0005】
この発明が解決しようとする課題は、高周波スイッチで出力線路間結合によるアイソレーション劣化を防ぐように、スイッチ回路による複数の出力線路のうち一部を異なる誘電体基板層上に形成する方式(異なる誘電体基板層出力線路形成による高周波スイッチ方式)を提供することにある。
【0006】
【課題を解決するための手段】
この発明の高周波スイッチは、上記課題を解決するためつぎの手段を設け、異なる誘電体基板層出力線路形成による高周波スイッチ方式を採ることを特徴とする。
【0007】
この発明に係る高周波スイッチは、入力端子から信号を入力し伝搬するマイクロストリップ入力線路と信号を複数信号出力のいずれか1つに切り換えるスイッチ回路と複数信号出力のうちの一部を伝搬し一端に接続される出力端子に出力する第1のマイクロストリップ出力線路とを同じ面に形成し地導体となる筺体上面に設ける第1の誘電体基板と、第1の誘電体基板との間に貫通して設ける第1のスルーホール経由でスイッチ回路から切り換えられた複数信号出力のうちの他の一部を伝搬し一端に接続される出力端子に出力する第2のマイクロストリップ出力線路を形成し筺体下面に設けるものである。
また、入力端子から信号を入力し伝搬するマイクロストリップ入力線路と信号を複数信号出力のいずれか1つに切り換えるスイッチ回路からの複数信号出力のうちの一部を伝搬し一端に接続される出力端子に出力する第1のマイクロストリップ出力線路とを同じ面に形成し地導体となる筺体の上面に設ける第1の誘電体基板と、第1の誘電体基板の開口部で筐体の上面に設けるスイッチ回路としてのモノリシックマイクロ波集積回路スイッチと、開口部で筐体を貫通して設ける第1のスルーホール経由でモノリシックマイクロ波集積回路スイッチから切り換えられた複数信号出力のうちの他の一部を伝搬し一端に接続される出力端子に出力する第2のマイクロストリップ出力線路を形成し筺体の下面に設ける第2の誘電体基板とを備えるものである。
また、入力端子から信号を入力し伝搬するマイクロストリップ入力線路と信号を複数信号出力のいずれか1つに切り換えるスイッチ回路からの複数信号出力のうちの一部を伝搬し一端に接続される出力端子に出力する第1のマイクロストリップ出力線路と第2のスルーホール経由で地導体となる筺体の上面と導通する第1の地導体とを同じ面に形成し筺体の上面に設ける第1の誘電体基板と、第1の地導体の上面に設けるスイッチ回路としてのモノリシックマイクロ波集積回路スイッチと、第1の誘電体基板との間に貫通して設ける第1のスルーホール経由でモノリシックマイクロ波集積回路スイッチから切り換えられた複数信号出力のうちの他の一部を伝搬し一端に接続される出力端子に出力する第2のマイクロストリップ出力線路を形成し筺体の下面に設ける第2の誘電体基板とを備えるものである。
【0008】
また、この発明に係る高周波スイッチは、中心に地導体層を有し、上面に入力端子から信号を入力し伝搬するマイクロストリップ入力線路と信号を複数信号出力のいずれか1つに切り換えるスイッチ回路と複数信号出力のうちの一部を伝搬し一端に接続される出力端子に出力する第1のマイクロストリップ出力線路とを同じ面に形成し、さらに下面に上面との間に貫通して設ける第1のスルーホール経由でスイッチ回路から切り換えられた複数信号出力のうちの他の一部を伝搬し一端に接続される出力端子に出力する第2のマイクロストリップ出力線路を形成し3層誘電体基板を備えたものである。
【0009】
また、この発明に係る高周波スイッチは、上面に入力端子から信号を入力し伝搬するコプレナ入力線路と信号を複数信号出力のいずれか1つに切り換えるスイッチ回路と複数信号出力のうちの一部を伝搬し一端に接続される出力端子に出力する第1のコプレナ出力線路と第2の地導体を同じ面に形成し、さらに下面に上面との間に貫通して設ける第1のスルーホール経由でスイッチ回路から切り換えられた複数信号出力のうちの他の一部を伝搬し一端に接続される出力端子に出力する第2のコプレナ出力線路と第3の地導体を形成し誘電体基板を備えたものである。
また、このスイッチ回路としてモノリシックマイクロ波集積回路スイッチを用い、第2の地導体の上に設けたものである。
【0010】
また、この発明に係る高周波スイッチは、入力端子から信号を入力し伝搬するマイクロストリップ入力線路と信号を複数信号出力のいずれか1つに切り換えるスイッチ回路と複数信号出力のうちの一部を伝搬し一端に接続される出力端子に出力する第1のマイクロストリップ出力線路とを同じ面に形成し第1の誘電体基板と、第4の地導体と、第2の誘電体基板と、第1の誘電体基板との間に貫通して設ける第3のスルーホール経由でスイッチ回路から切り換えられた複数信号出力のうちの他の一部を伝搬し一端に接続される出力端子に出力するトリプレート出力線路を形成した第3の誘電体基板と、第5の地導体と、第1の誘電体基板との間に貫通して設ける第のスルーホール経由でスイッチ回路から切り換えられた複数信号出力のうちのさらに他の一部を伝搬し一端に接続される出力端子に出力する第3のマイクロストリップ出力線路を形成した第4の誘電体基板とを順に積層する多層誘電体基板を用い、スイッチ回路の複数信号出力のうちの一部を第1のマイクロストリップ出力線路、他の一部をトリプレート出力線路、さらに他の一部を第3のマイクロストリップ出力線路に伝搬し各出力線路の一端に接続される出力端子に出力するものである。
【0011】
【発明の実施の形態】
この発明の実施の一形態を示す高周波スイッチは図1(a)と(b)と(c)のように、バイアス電圧等切換手段による入力端子2からの入力信号に対し、地導体となる筺体1の上面に設ける第1の誘電体基板4上に形成するマイクロストリップ入力線路6を伝搬し、当該入力線路6および第1のマイクロストリップ出力線路7aと7bと7c間をディスクリート・スイッチング半導体素子(電解効果トランジスタ(FET)、PINダイオードなど)で接続し1つの入力と5つの出力を有するSP5T(Single Pole 5−Throw)スイッチ回路5(当該駆動用バイアスを印加するバイアス回路は図示しない)を介して当該5つの出力のうちの一部に対しては第1の誘電体基板4上に形成する第1のマイクロストリップ出力線路7aと7bと7cおよび他の一部に対しては第1の誘電体基板4との間に貫通して設ける第1のスルーホール8aと8b経由で筺体1の下面に設ける第2の誘電体基板9上に形成する第2のマイクロストリップ出力線路10aと10bのいずれか1つを伝搬し、出力端子3aと3bと3cおよび3dと3eのいずれか1つに出力する。すべての出力線路を同じ誘電体基板上に形成しないで第1の出力線路7aと7bと7cおよび第2の出力線路10aと10bを異なる誘電体基板上に形成し、隣接する出力線路間結合を抑え当該アイソレーション劣化を防止できる。
【0012】
上記実施の形態の高周波スイッチは、スイッチ回路による複数の出力線路のうち一部を異なる誘電体基板層上に形成する方式(異なる誘電体基板層出力線路形成による高周波スイッチ方式)を採る。
【0013】
なお上記図1(a)と(b)と(c)に示す発明の実施の形態でスイッチ回路5はスイッチング素子としてディスクリート半導体素子を第1の誘電体基板4上に装着し、第1と第2の誘電体基板4と9間を貫通して第1のスルーホール8aと8bを設けるとして説明したが、図2(a)と(b)と(c)のように当該ディスクリート半導体素子に代えてモノリシックマイクロ波集積回路(MMIC)を用いるスイッチ11を第1の誘電体基板4に設ける開口部内で筺体1上に直接装着し、第2の誘電体基板9にも開口部を設け、筺体1だけを貫通して第1のスルーホール8aと8bを設けてもよい。高い信頼性と容易な組立性で上記に同じ効果を得る。
【0014】
また上記図2(a)と(c)に示す発明の実施の形態で第1と第2の誘電体基板4と9は開口部を設け、第1のスルーホール8aと8bは筺体1だけを貫通して設けるとして説明したが、図3(a)と(b)のように第1と第2の誘電体基板4と9間を貫通して第1のスルーホール8aと8bを設け、第1の誘電体基板4に設ける開口部に代えて別途設ける第2のスルーホール12aと12bで筺体1と導通するように第1の誘電体基板4上に別途設ける第1の地導体13上にMMICスイッチ11を装着してもよい。第1と第2の誘電体基板4と9に開口部を設けないで組立がより容易になる。
【0015】
また上記図1(c)に示す発明の実施の形態で図4のように、地導体となる筺体1の上面と下面に設ける第1と第2の誘電体基板4と9に代えて、中心に地導体層を有し、当該上面に当該入力線路6および当該第1の出力線路7aと7bと7cさらに当該下面に当該第2の出力線路10aと10bをそれぞれ形成し設ける3層誘電体基板14を用いてもよい。筺体に誘電体基板を個別に取り付ける場合に比べ、確実に地導体を形成できかつ部品点数低減で組立が容易になる。
【0016】
また上記図1(a)と(b)と(c)に示す発明の実施の形態で図5(a)と(b)と(c)のように、地導体となる筺体1の上面と下面に設ける第1と第2の誘電体基板4と9に代えて、上面にコプレナ線路で構成する入力線路6と第1の出力線路7aと7bと7cとスイッチ回路5および第2の地導体15さらに下面にコプレナ線路で構成する第2の出力線路10aと10bおよび第3の地導体16をそれぞれ形成し設ける第1の誘電体基板4を用いてもよい。マイクロストリップ線路で構成する入出力線路に比べ、簡易構造による部品点数低減で組立が容易になる。
【0017】
また上記図5(a)と(c)に示す発明の実施の形態で図6(a)と(b)のように、スイッチ回路5に代えてMMICスイッチ11を装着してもよい。部品点数低減で組立が容易になりかつ高い信頼性を得る。
【0018】
また上記図1(a)に示す発明の実施の形態で図7(a)のように、地導体となる筺体1の上面および下面にマイクロストリップ線路で構成する入力線路6と第1の出力線路7aと7bと7cとスイッチ回路5および第2の出力線路10aと10bをそれぞれ形成し設ける第1および第2の誘電体基板4と9に代えて、マイクロストリップ線路で構成する入力線路6と第1の出力線路7とスイッチ回路5とを形成し設ける第1の誘電体基板4と、別途設ける第4の地導体19と、マイクロストリップ線路で構成する第2の出力線路10aと10bを形成しないで設ける第2の誘電体基板9と、トリプレート線路で構成する第2の出力線路10aと10bを形成し別途設ける第3の誘電体基板20と、別途設ける第5の地導体21と、マイクロストリップ線路で構成する第3の出力線路23aと23bを形成し別途設ける第4の誘電体基板22とを上から順に積層する誘電体基板を用い、また第1と第2の誘電体基板4と9間を貫通して設ける第1のスルーホール8aと8bに代えて、第1と第2の誘電体基板4と9間を貫通して設ける第3のスルーホール17aと17bおよび第1と第4の誘電体基板4と22間を貫通して設ける第4のスルーホール18aと18bを用い、スイッチ回路5の複数信号出力のうちの一部を第1の出力線路7、他の一部を第2の出力線路10aと10b、さらに他の一部を第3の出力線路23aと23bに伝搬し当該出力端子に出力してもよい。同じ誘電体基板層上に形成する出力線路数が少ない構造の積層誘電体基板を用いより高いアイソレーションを得る。
【0019】
また上記図1〜図7に示す発明の実施の形態でスイッチ回路5とMMICスイッチ11はSP5Tスイッチとして説明したが、m個の出力を有するSPmTスイッチに適用してもよいのはいうまでもない。また1つの入力端子と複数の出力端子を有するとして説明したが、複数の入力端子と1つの出力端子を有してもよい。
【0020】
【発明の効果】
上記のようなこの発明の高周波スイッチでは、スイッチ回路による複数の出力線路のうち一部を異なる誘電体基板層上に形成する方式を採るから、従来のようにスイッチ回路による複数の出力線路を同じ誘電体基板上に形成する方式に比べ隣接する出力線路間結合を抑え、当該アイソレーション劣化を防止できるほか各発明ごとにつぎの効果がある。
(1)高い信頼性と容易な組立性を得る。
(2)誘電体基板に開口部を設けないで組立がより容易になる。
(3)筺体に誘電体基板を個別に取り付ける場合に比べ、確実に地導体を形成できかつ部品点数低減で組立が容易になる。
(4)マイクロストリップ線路で構成する入出力線路に比べ、簡易構造による部品点数低減で組立が容易になる。
(5)部品点数低減で組立が容易になりかつ高い信頼性を得る。
(6)同じ誘電体基板層上に形成する出力線路数が少ない構造の積層誘電体基板を用い、より高いアイソレーションを得る。
【図面の簡単な説明】
【図1】 この発明の実施の一形態を示す高周波スイッチの構成斜視/断面図。
【図2】 この発明の実施の他の一形態を示す構成斜視/断面図。
【図3】 この発明の実施の他の一形態を示す構成斜視/断面図。
【図4】 この発明の実施の他の一形態を示す構成断面図。
【図5】 この発明の実施の他の一形態を示す構成斜視/断面図。
【図6】 この発明の実施の他の一形態を示す構成斜視/断面図。
【図7】 この発明の実施の他の一形態を示す構成斜視図と当該積層誘電体基板の分解斜視図。
【図8】 従来の技術を示す高周波スイッチの構成平面図。
【符号の説明】
1 筺体、2 入力端子、3a、3b、3c、3d、3e 出力端子、4 第1の誘電体基板、5 スイッチ回路、6 入力線路、7a、7b、7c 第1の出力線路、8a、8b 第1のスルーホール、9 第2の誘電体基板、10a、10b 第2の出力線路、11 MMICスイッチ、12a、12b 第2のスルーホール、13 第1の地導体、14 3層誘電体基板、15 第2の地導体、16 第3の地導体、17a、17b 第3のスルーホール、18a、18b第4のスルーホール、19 第4の地導体、20 第3の誘電体基板、21 第5の地導体、22 第4の誘電体基板、23a、23b 第3の出力線路。
なお図中、同一符号は同一または相当部分を示す。
[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a high-frequency switch that is applied to the UHF / SHF / EHF band and improves isolation.
[0002]
[Prior art]
For example, as shown in the literature (DL Dunn et al .: Multiactive Multithrow Active Switches, IEEE MTT-Sational International Symposium Digest, pp.549-551, 1987) as shown in FIG. Is propagated through the microstrip input line 6 formed on the first dielectric substrate 4 provided on the upper surface of the casing 1 serving as the ground conductor, and the input line 6 and the first micro SP4T (Single Pole 4-Through) switch circuit 5a (a bias circuit for applying the driving bias) having striped output lines 7a, 7b, 7c and 7d connected to each other and having one input and four outputs Is propagated through any one of the first output lines 7a, 7b, 7c and 7d via the first output lines 7a, 7b, 7c and 7d, and the output terminals 3a, 3b and 3c. The signal is output to any one of the output terminals 3a, 3b, 3c, and 3d via an amplifier 24 provided in two stages in series between 3d.
[0003]
The conventional high-frequency switch adopts a method of forming a plurality of output lines by a switch circuit on the same dielectric substrate (a high-frequency switch method by forming the same dielectric substrate output line).
[0004]
[Problems to be solved by the invention]
Since the conventional high frequency switch as described above adopts a high frequency switch method by forming the same dielectric substrate output line, when the number of outputs of the switch circuit increases, a plurality of output lines are concentrated in the periphery, and the interval between adjacent output lines is reduced. There is a problem in that isolation degradation occurs due to coupling between output lines.
[0005]
The problem to be solved by the present invention is that a part of a plurality of output lines by a switch circuit is formed on different dielectric substrate layers so as to prevent isolation degradation due to coupling between output lines in a high-frequency switch (different The object is to provide a high-frequency switch system by forming a dielectric substrate layer output line.
[0006]
[Means for Solving the Problems]
In order to solve the above-mentioned problems, the high-frequency switch of the present invention is provided with the following means and adopts a high-frequency switch system by forming different dielectric substrate layer output lines.
[0007]
RF switch propagates the part of the switch circuits and a plurality signal outputs for switching the microstrip input line and signal to one of a plurality signal output for inputting a signal from the input terminal propagate one end according to the present invention a first dielectric substrate to provide a first microstrip output line for output to the output terminal on the upper surface of the housing to be formed ground conductor on the same surface to be connected to, between the first dielectric substrate forming a second microstrip output line for output to the output terminal connected to another part to the propagation end of the first plurality signal is switched from the through hole through Death switch circuit provided through output It is provided on the lower surface of the shishi body.
Also, a microstrip input line that inputs and propagates a signal from the input terminal and an output terminal that propagates a part of a plurality of signal outputs from a switch circuit that switches the signal to any one of the plurality of signal outputs and is connected to one end A first dielectric strip that is formed on the same surface and provided on the upper surface of the casing serving as a ground conductor, and provided on the upper surface of the housing at the opening of the first dielectric substrate. A monolithic microwave integrated circuit switch as a switch circuit, and another part of the plurality of signal outputs switched from the monolithic microwave integrated circuit switch via the first through hole provided through the housing at the opening. which second microstrip output line for outputting propagates to the output terminal connected to one end to form and a second dielectric substrate provided on the underside of the housing A.
Also, a microstrip input line that inputs and propagates a signal from the input terminal and an output terminal that propagates a part of a plurality of signal outputs from a switch circuit that switches the signal to any one of the plurality of signal outputs and is connected to one end The first microstrip output line that outputs to the first conductor and the first ground conductor that is electrically connected to the upper surface of the housing serving as the ground conductor via the second through hole are formed on the same surface and provided on the upper surface of the housing Monolithic microwave integrated circuit via a first through hole provided between the substrate, a monolithic microwave integrated circuit switch as a switch circuit provided on the upper surface of the first ground conductor, and the first dielectric substrate Forms a second microstrip output line that propagates another part of the plurality of signal outputs switched from the switch and outputs it to an output terminal connected to one end In which and a second dielectric substrate disposed on the lower surface of the housing.
[0008]
The high frequency switch according to the present invention, the center has a ground conductor layer, the switch switched to one of a plurality signal output microstrip input line and signal to enter a signal from the input terminal to the upper surface propagation circuit And a first microstrip output line that propagates a part of the plurality of signal outputs and outputs to the output terminal connected to one end is formed on the same surface, and further provided on the lower surface so as to penetrate between the upper surface and the lower surface. 3-layer dielectric forming a second microstrip output line for outputting the other portion of the plurality signal output is switched from the first through-hole via Death switch circuit to an output terminal connected to the propagated end A body substrate is provided.
[0009]
The high frequency switch according to the present invention, a part of the switch circuits and a plurality signal outputs for switching the coplanar input line and signal to enter a signal from the input terminal to the upper surface propagating in one of a plurality signal outputs a first coplanar output line and the second ground conductor to be output propagates to the output terminal connected to one end formed in the same plane, further via the first through-hole provided through between the upper surface to the lower surface a second coplanar output line and the dielectric substrate forming the third ground conductor for outputting switch circuit another portion of the plurality signal output is switched from the output terminal connected to the propagated end It is provided.
Further, using a monolithic microwave integrated circuit switch as the switch circuit, in which provided on the second ground conductor.
[0010]
The high frequency switch according to the invention, propagation part of the switch circuits and a plurality signal outputs for switching the microstrip input line and signal to one of a plurality signal output for inputting a signal from the input terminal propagation A first dielectric substrate having a first microstrip output line output to an output terminal connected to one end formed on the same surface, a fourth ground conductor, a second dielectric substrate, to the output terminal connected to another part to the propagation end of a plurality signal output is switched from the third through-hole via death switch circuit which is provided through between the first dielectric substrate a third dielectric substrate provided with the tri-plate output line, and the ground conductor of the fifth, is switched from the fourth through hole through Death switch circuit which is provided through between the first dielectric substrate Multiple signal output Further propagates another part of a multilayer dielectric substrate laminating a fourth dielectric substrate formed with the third microstrip output line for output to the output terminal connected to one end of the order, the switching circuit Propagating part of the multiple signal outputs to the first microstrip output line, the other part to the triplate output line, and the other part to the third microstrip output line and connecting to one end of each output line Output to the output terminal.
[0011]
DETAILED DESCRIPTION OF THE INVENTION
As shown in FIGS. 1A, 1B, and 1C, a high-frequency switch showing an embodiment of the present invention is a housing that serves as a ground conductor for an input signal from an input terminal 2 by a switching means such as a bias voltage. 1 is propagated through a microstrip input line 6 formed on a first dielectric substrate 4 provided on the upper surface of the first discrete circuit, and a discrete switching semiconductor element (between the input line 6 and the first microstrip output lines 7a, 7b and 7c) Through an SP5T (Single Pole 5-Throw) switch circuit 5 (a bias circuit for applying the driving bias is not shown) having one input and five outputs connected by a field effect transistor (FET), a PIN diode, etc. Thus, a first microstrip output line formed on the first dielectric substrate 4 for a part of the five outputs 7a, 7b, 7c and other parts of the second dielectric provided on the lower surface of the housing 1 through first through holes 8a and 8b provided between the first dielectric substrate 4 and the first dielectric substrate 4. It propagates through any one of the second microstrip output lines 10a and 10b formed on the substrate 9, and outputs it to any one of the output terminals 3a and 3b and 3c and 3d and 3e. The first output lines 7a, 7b and 7c and the second output lines 10a and 10b are formed on different dielectric substrates without forming all output lines on the same dielectric substrate, and coupling between adjacent output lines is established. It is possible to suppress the isolation deterioration.
[0012]
The high-frequency switch according to the embodiment employs a system in which a part of a plurality of output lines by the switch circuit is formed on different dielectric substrate layers (a high-frequency switch system by forming different dielectric substrate layer output lines).
[0013]
In the embodiment of the invention shown in FIGS. 1 (a), 1 (b) and 1 (c), the switch circuit 5 has discrete semiconductor elements mounted on the first dielectric substrate 4 as switching elements. The first through holes 8a and 8b are provided to penetrate between the two dielectric substrates 4 and 9, but instead of the discrete semiconductor element as shown in FIGS. 2 (a), (b) and (c). A switch 11 using a monolithic microwave integrated circuit (MMIC) is directly mounted on the housing 1 in the opening provided in the first dielectric substrate 4, and the opening is also provided in the second dielectric substrate 9. Only the first through holes 8a and 8b may be provided. The same effect is obtained with high reliability and easy assembly.
[0014]
In the embodiment of the invention shown in FIGS. 2A and 2C, the first and second dielectric substrates 4 and 9 are provided with openings, and the first through-holes 8a and 8b are provided with only the housing 1. Although described as being provided through, the first through holes 8a and 8b are provided through the first and second dielectric substrates 4 and 9 as shown in FIGS. On the first ground conductor 13 separately provided on the first dielectric substrate 4 so as to be electrically connected to the housing 1 through the second through holes 12a and 12b separately provided instead of the openings provided in the one dielectric substrate 4. The MMIC switch 11 may be attached. Assembly is facilitated without providing openings in the first and second dielectric substrates 4 and 9.
[0015]
Further, as shown in FIG. 4 in the embodiment of the invention shown in FIG. 1 (c), instead of the first and second dielectric substrates 4 and 9 provided on the upper surface and the lower surface of the casing 1 serving as the ground conductor, A three-layer dielectric substrate having a ground conductor layer on the upper surface, and forming the input line 6 and the first output lines 7a, 7b and 7c on the upper surface, and forming the second output lines 10a and 10b on the lower surface, respectively. 14 may be used. Compared to the case where the dielectric substrate is individually attached to the housing, the ground conductor can be reliably formed and the number of parts can be reduced to facilitate assembly.
[0016]
Further, in the embodiment of the invention shown in FIGS. 1 (a), (b) and (c), as shown in FIGS. 5 (a), 5 (b) and 5 (c), the upper surface and the lower surface of the casing 1 serving as a ground conductor. In place of the first and second dielectric substrates 4 and 9 provided in the input circuit 6, the input line 6, the first output lines 7 a, 7 b and 7 c, the switch circuit 5, and the second ground conductor 15 are formed on the upper surface by coplanar lines. Further, the first dielectric substrate 4 provided with the second output lines 10a and 10b and the third ground conductor 16 formed of coplanar lines on the lower surface may be used. Compared to an input / output line composed of a microstrip line, assembly is facilitated by reducing the number of parts with a simple structure.
[0017]
In the embodiment of the invention shown in FIGS. 5A and 5C, the MMIC switch 11 may be mounted instead of the switch circuit 5 as shown in FIGS. 6A and 6B. Assembly is facilitated by reducing the number of parts, and high reliability is obtained.
[0018]
In the embodiment of the invention shown in FIG. 1 (a), as shown in FIG. 7 (a), the input line 6 and the first output line constituted by microstrip lines on the upper and lower surfaces of the casing 1 serving as a ground conductor. 7a, 7b and 7c, switch circuit 5 and second output lines 10a and 10b are formed and provided in place of first and second dielectric substrates 4 and 9, respectively, and input line 6 and microstrip line are provided. The first dielectric substrate 4 provided by forming one output line 7 and the switch circuit 5, the fourth ground conductor 19 provided separately, and the second output lines 10a and 10b constituted by microstrip lines are not formed. A second dielectric substrate 9 provided in the above, a third dielectric substrate 20 formed separately by forming second output lines 10a and 10b composed of triplate lines, a fifth ground conductor 21 provided separately, and a micro A dielectric substrate is used in which third output lines 23a and 23b formed of trip lines are formed and a fourth dielectric substrate 22 provided separately is laminated in order from the top, and the first and second dielectric substrates 4 Instead of the first through holes 8a and 8b provided between the first and second dielectric substrates 4, the third through holes 17a and 17b and the first and second through holes provided between the first and second dielectric substrates 4 and 9 are provided. The fourth through holes 18a and 18b provided between the four dielectric substrates 4 and 22 are used, and a part of the plurality of signal outputs of the switch circuit 5 is used as the first output line 7 and the other part is used. The second output lines 10a and 10b and some other part may be propagated to the third output lines 23a and 23b and output to the output terminals. Higher isolation is obtained by using a laminated dielectric substrate having a structure with a small number of output lines formed on the same dielectric substrate layer.
[0019]
Although the switch circuit 5 and the MMIC switch 11 are described as SP5T switches in the embodiments of the invention shown in FIGS. 1 to 7, it goes without saying that the present invention may be applied to an SPmT switch having m outputs. . Moreover, although it demonstrated as having one input terminal and several output terminal, you may have several input terminal and one output terminal.
[0020]
【The invention's effect】
In the high frequency switch of the present invention as described above, a part of the plurality of output lines by the switch circuit is formed on different dielectric substrate layers, so that the plurality of output lines by the switch circuit are the same as in the prior art. Compared with the method of forming on a dielectric substrate, the coupling between adjacent output lines can be suppressed, and the isolation deterioration can be prevented.
(1) High reliability and easy assembly are obtained.
(2) Assembly is facilitated without providing an opening in the dielectric substrate.
(3) Compared to the case where the dielectric substrates are individually attached to the housing, the ground conductor can be reliably formed, and the assembly is facilitated by reducing the number of parts.
(4) Compared to an input / output line composed of a microstrip line, assembly is facilitated by reducing the number of parts with a simple structure.
(5) Assembly is facilitated by reducing the number of parts and high reliability is obtained.
(6) Using a laminated dielectric substrate having a structure with a small number of output lines formed on the same dielectric substrate layer, higher isolation is obtained.
[Brief description of the drawings]
FIG. 1 is a perspective / sectional view of a configuration of a high-frequency switch showing an embodiment of the present invention.
FIG. 2 is a structural perspective view / sectional view showing another embodiment of the present invention.
FIG. 3 is a structural perspective / sectional view showing another embodiment of the present invention.
FIG. 4 is a structural cross-sectional view showing another embodiment of the present invention.
FIG. 5 is a structural perspective view / sectional view showing another embodiment of the present invention.
FIG. 6 is a structural perspective view / sectional view showing another embodiment of the present invention.
FIG. 7 is a structural perspective view showing another embodiment of the present invention and an exploded perspective view of the multilayer dielectric substrate.
FIG. 8 is a configuration plan view of a high-frequency switch showing a conventional technique.
[Explanation of symbols]
1 housing 2 input terminal 3a 3b 3c 3d 3e output terminal 4 first dielectric substrate 5 switch circuit 6 input line 7a 7b 7c first output line 8a 8b first 1 through-hole, 9 second dielectric substrate, 10a, 10b second output line, 11 MMIC switch, 12a, 12b second through-hole, 13 first ground conductor, 14 three-layer dielectric substrate, 15 2nd ground conductor, 16 3rd ground conductor, 17a, 17b 3rd through hole, 18a, 18b 4th through hole, 19 4th ground conductor, 20 3rd dielectric substrate, 21 5th Ground conductor, 22 4th dielectric substrate, 23a, 23b 3rd output line.
In the drawings, the same reference numerals indicate the same or corresponding parts.

Claims (7)

入力端子から信号を入力し伝搬するマイクロストリップ入力線路と前記信号を複数信号出力のいずれか1つに切り換えるスイッチ回路と前記複数信号出力のうちの一部を伝搬し一端に接続される出力端子に出力する第1のマイクロストリップ出力線路とを同じ面に形成し地導体となる筺体上面に設ける第1の誘電体基板と、前記第1の誘電体基板との間に貫通して設ける第1のスルーホール経由で前記スイッチ回路から切り換えられた前記複数信号出力のうちの他の一部を伝搬し一端に接続される出力端子に出力する第2のマイクロストリップ出力線路を形成し前記筺体下面に設ける第2の誘電体基板とを備える高周波スイッチ。Output terminal connected to the signal microstrip input line for inputting a signal from the input terminal propagate in propagation to an end part of said switch circuit for switching to one of a plurality signal outputs a plurality signal outputs a first dielectric substrate provided on the upper surface of the first microstrip output line and the formation and ground conductor on the same surface casing to be output to, first provided through between the first dielectric substrate Forming a second microstrip output line that propagates another part of the plurality of signal outputs switched from the switch circuit via one through hole and outputs the signal to an output terminal connected to one end of the housing ; A high frequency switch comprising a second dielectric substrate provided on a lower surface. 入力端子から信号を入力し伝搬するマイクロストリップ入力線路と前記信号を複数信号出力のいずれか1つに切り換えるスイッチ回路からの前記複数信号出力のうちの一部を伝搬し一端に接続される出力端子に出力する第1のマイクロストリップ出力線路とを同じ面に形成し地導体となる筺体の上面に設ける第1の誘電体基板と、前記第1の誘電体基板の開口部で前記筐体の上面に設ける前記スイッチ回路としてのモノリシックマイクロ波集積回路スイッチと、前記開口部で前記筐体を貫通して設ける第1のスルーホール経由で前記モノリシックマイクロ波集積回路スイッチから切り換えられた前記複数信号出力のうちの他の一部を伝搬し一端に接続される出力端子に出力する第2のマイクロストリップ出力線路を形成し前記筺体の下面に設ける第2の誘電体基板とを備える高周波スイッチ。 A microstrip input line that inputs and propagates a signal from an input terminal and an output terminal that propagates a part of the plurality of signal outputs from a switch circuit that switches the signal to one of a plurality of signal outputs and is connected to one end A first dielectric substrate that is formed on the same surface as the first microstrip output line that outputs to the ground, and is provided on the upper surface of the casing serving as a ground conductor, and the upper surface of the housing at the opening of the first dielectric substrate A monolithic microwave integrated circuit switch as the switch circuit provided in the circuit, and a plurality of signal outputs switched from the monolithic microwave integrated circuit switch through a first through hole provided through the housing at the opening. A second microstrip output line that propagates the other part of the signal and outputs to the output terminal connected to one end is formed and provided on the lower surface of the casing. A second dielectric high frequency switch and a substrate that. 入力端子から信号を入力し伝搬するマイクロストリップ入力線路と前記信号を複数信号出力のいずれか1つに切り換えるスイッチ回路からの前記複数信号出力のうちの一部を伝搬し一端に接続される出力端子に出力する第1のマイクロストリップ出力線路と第2のスルーホール経由で地導体となる筺体の上面と導通する第1の地導体とを同じ面に形成し前記筺体の上面に設ける第1の誘電体基板と、前記第1の地導体の上面に設ける前記スイッチ回路としてのモノリシックマイクロ波集積回路スイッチと、前記第1の誘電体基板との間に貫通して設ける第1のスルーホール経由で前記モノリシックマイクロ波集積回路スイッチから切り換えられた前記複数信号出力のうちの他の一部を伝搬し一端に接続される出力端子に出力する第2のマイクロストリップ出力線路を形成し前記筺体の下面に設ける第2の誘電体基板とを備える高周波スイッチ。 A microstrip input line that inputs and propagates a signal from an input terminal and an output terminal that propagates a part of the plurality of signal outputs from a switch circuit that switches the signal to one of a plurality of signal outputs and is connected to one end The first microstrip output line that outputs to the first conductor and the first ground conductor that is electrically connected to the upper surface of the housing serving as the ground conductor via the second through hole are formed on the same surface, and the first dielectric is provided on the upper surface of the housing. Via the first through hole provided between the body substrate, the monolithic microwave integrated circuit switch as the switch circuit provided on the upper surface of the first ground conductor, and the first dielectric substrate. A second microphone that propagates another part of the plurality of signal outputs switched from the monolithic microwave integrated circuit switch and outputs the signal to an output terminal connected to one end. A second dielectric high frequency switch and a substrate to form a strip output lines provided on the lower surface of the housing. 中心に地導体層を有し、上面に入力端子から信号を入力し伝搬するマイクロストリップ入力線路と前記信号を複数信号出力のいずれか1つに切り換えるスイッチ回路と前記複数信号出力のうちの一部を伝搬し一端に接続される出力端子に出力する第1のマイクロストリップ出力線路とを同じ面に形成し、さらに下面に前記上面との間に貫通して設ける第1のスルーホール経由で前記スイッチ回路から切り換えられた前記複数信号出力のうちの他の一部を伝搬し一端に接続される出力端子に出力する第2のマイクロストリップ出力線路を形成し3層誘電体基板を備えたことを特徴とする高周波スイッチ。Center has a ground conductor layer, of the signal microstrip input line for inputting a signal from the input terminal to the upper surface propagates switching circuit for switching to one of a plurality signal outputs of the plurality signal output first through hole and a first microstrip output line for output to the output terminal of propagating part is connected to one end formed on the same surface, provided through between the upper surface underneath surface further A three-layer dielectric substrate formed with a second microstrip output line that propagates through another part of the plurality of signal outputs switched from the switch circuit via the first output and outputs to the output terminal connected to one end; A high frequency switch characterized by comprising. 上面に入力端子から信号を入力し伝搬するコプレナ入力線路と前記信号を複数信号出力のいずれか1つに切り換えるスイッチ回路と前記複数信号出力のうちの一部を伝搬し一端に接続される出力端子に出力する第1のコプレナ出力線路と第2の地導体を同じ面に形成し、さらに下面に前記上面との間に貫通して設ける第1のスルーホール経由で前記スイッチ回路から切り換えられた前記複数信号出力のうちの他の一部を伝搬し一端に接続される出力端子に出力する第2のコプレナ出力線路と第3の地導体を形成し誘電体基板を備えたことを特徴とする高周波スイッチ。It is connected to the signal and coplanar input line for inputting a signal from the input terminal to the upper surface propagating in a propagation and an end part of said switch circuit for switching to one of a plurality signal output multiple signal output Output The first coplanar output line to be output to the terminal and the second ground conductor are formed on the same surface, and further switched from the switch circuit via a first through hole provided on the lower surface and penetrating between the upper surface. A dielectric substrate on which a second coplanar output line that propagates another part of the plurality of signal outputs and outputs to the output terminal connected to one end and a third ground conductor is formed; High frequency switch to do. 前記スイッチ回路はモノリシックマイクロ波集積回路スイッチであり、前記第2の地導体の上に設けることを特徴とする請求項5記載の高周波スイッチ。 6. The high frequency switch according to claim 5, wherein the switch circuit is a monolithic microwave integrated circuit switch , and is provided on the second ground conductor . 入力端子から信号を入力し伝搬するマイクロストリップ入力線路と前記信号を複数信号出力のいずれか1つに切り換えるスイッチ回路と前記複数信号出力のうちの一部を伝搬し一端に接続される出力端子に出力する第1のマイクロストリップ出力線路とを同じ面に形成し第1の誘電体基板と、第4の地導体と、第2の誘電体基板と、前記第1の誘電体基板との間に貫通して設ける第3のスルーホール経由で前記スイッチ回路から切り換えられた前記複数信号出力のうちの他の一部を伝搬し一端に接続される出力端子に出力するトリプレート出力線路を形成した第3の誘電体基板と、第5の地導体と、前記第1の誘電体基板との間に貫通して設ける第のスルーホール経由で前記スイッチ回路から切り換えられた前記複数信号出力のうちのさらに他の一部を伝搬し一端に接続される出力端子に出力する第3のマイクロストリップ出力線路を形成した第4の誘電体基板とを順に積層する多層誘電体基板を用い、前記スイッチ回路の複数信号出力のうちの一部を前記第1のマイクロストリップ出力線路、他の一部を前記トリプレート出力線路、さらに他の一部を前記第3のマイクロストリップ出力線路に伝搬し各出力線路の一端に接続される出力端子に出力することを特徴とする高周波スイッチ。Output terminal connected to the signal microstrip input line for inputting a signal from the input terminal propagate in propagation to an end part of said switch circuit for switching to one of a plurality signal outputs a plurality signal outputs And a first dielectric substrate formed on the same surface, a fourth ground conductor, a second dielectric substrate, and the first dielectric substrate. A triplate output line is formed which propagates another part of the plurality of signal outputs switched from the switch circuit via a third through hole provided between them and outputs the signal to an output terminal connected to one end. The plurality of signal outputs switched from the switch circuit through a fourth through hole provided between the third dielectric substrate, the fifth ground conductor, and the first dielectric substrate. My house A multilayer dielectric substrate laminating a fourth dielectric substrate formed with the third microstrip output line for output to the output terminal connected to one end propagates a portion of the other in order to, in the switching circuit A part of the plurality of signal outputs is propagated to the first microstrip output line, another part is propagated to the triplate output line, and another part is propagated to the third microstrip output line. A high-frequency switch that outputs to an output terminal connected to one end.
JP26967096A 1996-10-11 1996-10-11 High frequency switch Expired - Fee Related JP3639063B2 (en)

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