JP3635984B2 - Power converter - Google Patents

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JP3635984B2
JP3635984B2 JP12990099A JP12990099A JP3635984B2 JP 3635984 B2 JP3635984 B2 JP 3635984B2 JP 12990099 A JP12990099 A JP 12990099A JP 12990099 A JP12990099 A JP 12990099A JP 3635984 B2 JP3635984 B2 JP 3635984B2
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Prior art keywords
reactor
power conversion
coil conductor
circuit
plate
Prior art date
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JP12990099A
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Japanese (ja)
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JP2000324856A (en
Inventor
政和 鷁頭
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Fuji Electric Co Ltd
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Fuji Electric Device Technology Co Ltd
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Description

【0001】
【発明の属する技術分野】
この発明はリアクトルと、電力用半導体素子の直列接続回路で構成された電力変換回路と、該電力変換回路を駆動する制御回路とを備え、これらを一体化して形成される電力変換装置に関する。
【0002】
【従来の技術】
図4は、この種の電力変換装置として代表的な降圧型チョッパ装置の従来例を示す模式的分解構成図である。
また図5は、図4に示した降圧型チョッパ装置の模式的断面構成図であり、さらに図6は、図4に示した構成による降圧型チョッパ装置の回路構成図である。
【0003】
図4に示した模式的分解構成図において、リアクトル10は図示の如く渦巻状に整形された平板コイル導体11と、平板コイル導体11の一方の平面を覆う磁性体板12と、平板コイル導体11の他方の平面を覆い図示の如く中央部に貫通穴を有する磁性体板13とを一体化して形成され、また、半導体基板20には電力用半導体素子としてのMOSFET21aとMOSFET21bとの直列接続回路で構成された電力変換回路21と、電力変換回路21を駆動する制御回路22とが搭載され、さらに、リアクトル10と半導体基板20との間には図示の如く中央部に貫通穴を有する絶縁板31が挿入されている。
【0004】
図4に示したリアクトル10と絶縁板31と半導体基板20とが、図5に示す模式的断面構成図の如く積層され、この断面構成図に示す如く、平板コイル導体11の外周部および内部空隙部には絶縁物14が充填されている。
【0005】
さらに図4に示した平板コイル導体11の中央端部(符号M1 部)と、MOSFET21aとMOSFET21bとの接続点(符号M2 部)とは、磁性体板13,絶縁板31それぞれの前記貫通穴を通過する図示しない接続導体を介して接続されている。
【0006】
従って、図4,図5に示した構成の降圧型チョッパ装置は図6に示す如き回路構成となり、MOSFET21aとMOSFET21bとの直列接続回路の両端(符号Pi ,Ni 部)には外部直流電源1から直流電圧が供給され、リアクトル10の外周端部(符号Po 部)と、外部直流電源1の負極端子(符号Ni 部)との間に負荷2が接続され、制御回路22によりMOSFET21aとMOSFET21bとを交互にオンオフさせることで、外部直流電源1の直流電圧より降圧した直流電圧を負荷2に供給することができる。
【0007】
【発明が解決しようとする課題】
図6に示した従来の降圧型チョッパ装置の回路構成において、コンデンサ3により、負荷2の両端電圧を平滑する作用を行っているが、このコンデンサ3は、リアクトル10と半導体基板20と絶縁板31とを一体化した構造の外部に設置する必要があり、降圧型チョッパ装置など電力変換装置全体の大型,コストアップの要因となっている。
この発明の目的は上記問題点を解決し、小型,低価格の降圧型チョッパ装置などの電力変換装置を提供することにある。
【0008】
【課題を解決するための手段】
この発明の電力変換装置は、外周部および内部空隙部に絶縁物が充填され、渦巻状に整形された平板コイル導体と、該平板コイル導体の一方の平面を覆う第1磁性体板と、該平板コイル導体の他方の平面を覆う中央部に貫通穴を有する第2磁性体板とを一体化して形成されたリアクトルと、モジュール化して形成され、電力用半導体素子の直列接続回路で構成された電力変換回路と、前記電力変換回路と同一モジュール内に形成され、該電力変換回路を駆動する制御回路と、前記直列接続回路のいずれかの一端に接続され、且つ中央部に貫通穴を有し前記リアクトルとほぼ同一の外周形状の電極板と、該電極板と前記電力変換回路との間の挿設され、且つ中央部に貫通穴を有し前記リアクトルと同一の外周形状の第1絶縁板と、前記電極板と前記リアクトルとの間挿設され、且つ中央部に貫通穴を有し該リアクトルと同一の外周形状の第2絶縁板とを備え、前記直列接続回路の中間接続点と前記平板コイル導体の中央端部とを、前記それぞれの貫通穴を介して接続してなることを特徴とする。
【0009】
この発明によれば、近接して敷設された前記平板コイル導体と前記電極板との間に介在する浮遊容量を積極的に利用した電力変換装置にすることで、この電力変換装置をより小型,低価格にすることができる。
【0010】
【発明の実施の形態】
図1は、この発明の電力変換装置として代表的な降圧型チョッパ装置の実施例を示す模式的分解構成図である。
また図2は、図1に示した降圧型チョッパ装置の模式的断面構成図である。
さらに図3は、図1に示した降圧型チョッパ装置の等価回路構成図である。
なお、図1〜図3において、図4〜図6に示した従来例装置と同一機能,構造を有するものには同一符号を付している。
【0011】
すなわち図1に示した模式的分解構成図において、リアクトル10は図示の如く渦巻状に整形された平板コイル導体11と、平板コイル導体11の一方の平面を覆う磁性体板12と、平板コイル導体11の他方の平面を覆い図示の如く中央部に貫通穴を有する磁性体板13とを一体化して形成され、また、半導体基板20には電力用半導体素子としてのMOSFET21aとMOSFET21bとの直列接続回路で構成された電力変換回路21と、電力変換回路21を駆動する制御回路22とが搭載され、さらに、図示の如く中央部に貫通穴を有しリアクトル10とほぼ同一の外周形状の電極板23の端部(符号NO 部)がMOSFET21a,21bとの直列接続回路の一端(符号Ni 部)に接続され、また、この電極板23と半導体基板20との間には図示の如く中央部に貫通穴を有しリアクトル10と同一の外周形状の絶縁板24が挿設され、さらに、電極板23とリアクトル10との間には図示の如く中央部に貫通穴を有しリアクトル10と同一の外周形状の絶縁板31が挿設されている。
【0012】
図1に示したリアクトル10と絶縁板31と電極板23と絶縁板24と半導体基板20とが、図2に示す模式的断面構成図の如く積層され、この断面構成図に示す如く、平板コイル導体11の外周部および内部空隙部には絶縁物14が充填されている。
【0013】
さらに図1に示した平板コイル導体11の中央端部(符号M1 部)と、MOSFET21aとMOSFET21bとの接続点(符号M2 部)とは、磁性体板13,絶縁板31,電極板23,絶縁板24それぞれの前記貫通穴を通過する図示しない接続導体を介して接続されている。
【0014】
従って、図1,図2に示した構成の降圧型チョッパ装置は図3に示す如き回路構成となり、MOSFET21aとMOSFET21bとの直列接続回路の両端(符号Pi ,Ni 部)には外部直流電源1から直流電圧が供給され、リアクトル10の外周端部(符号Po 部)と、外部直流電源1の負極端子(符号Ni 部)と同電位の電極板23の端部(符号NO 部)との間に負荷2が接続され、制御回路22によりMOSFET21aとMOSFET21bとを交互にオンオフさせることで、外部直流電源1の直流電圧より降圧した直流電圧を負荷2に供給することができる。
【0015】
このとき、図2に示した如く、積層された平板コイル導体11と電極板23との間に介在する浮遊容量CS が負荷2の両端電圧を平滑する作用を行っている。近年、電力変換装置を構成する高速動作の電力用半導体素子により、前記浮遊容量CS のみで負荷2の両端電圧を平滑することが可能になってきている。
【0016】
【発明の効果】
この発明によれば、上述の如く、積層した平板コイル導体と電極板との間に介在する浮遊容量を積極的に利用した電力変換装置にすることで、この電力変換装置をより小型,低価格にすることができ、例えば、携帯電話などの内部電源として好適な電力変換装置である。
なお、この発明の電力変換装置として降圧型チョッパ装置の例について記載したが、昇圧型チョッパ装置などにも適用できる。
【図面の簡単な説明】
【図1】この発明の実施例を示す電力変換装置の模式的分解構成図
【図2】図1の模式的断面構成図
【図3】図1の等価回路構成図
【図4】従来例を示す電力変換装置の模式的分解構成図
【図5】図4の模式的断面構成図
【図6】図4の回路構成図
【符号の説明】
1…直流電源、2…負荷、3…コンデンサ、10…リアクトル、11…平板コイル導体、12,13…磁性体板、20…半導体基板、21…電力変換回路、21a,21b…MOSFET、22…制御回路、23…電極板、24,31…絶縁板。
[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a power conversion device that includes a reactor, a power conversion circuit configured by a series connection circuit of power semiconductor elements, and a control circuit that drives the power conversion circuit, and is formed by integrating them.
[0002]
[Prior art]
FIG. 4 is a schematic exploded configuration diagram showing a conventional example of a step-down chopper device that is typical as this type of power conversion device.
5 is a schematic cross-sectional configuration diagram of the step-down chopper device shown in FIG. 4, and FIG. 6 is a circuit configuration diagram of the step-down chopper device having the configuration shown in FIG.
[0003]
In the schematic exploded view shown in FIG. 4, the reactor 10 includes a flat plate coil conductor 11 shaped like a spiral as shown in the figure, a magnetic plate 12 covering one plane of the flat plate coil conductor 11, and the flat plate coil conductor 11. As shown in the figure, a magnetic plate 13 having a through hole at the center is integrally formed. Further, the semiconductor substrate 20 has a series connection circuit of a MOSFET 21a and a MOSFET 21b as power semiconductor elements. The configured power conversion circuit 21 and a control circuit 22 for driving the power conversion circuit 21 are mounted. Further, an insulating plate 31 having a through hole in the central portion between the reactor 10 and the semiconductor substrate 20 as shown in the figure. Has been inserted.
[0004]
The reactor 10, the insulating plate 31, and the semiconductor substrate 20 shown in FIG. 4 are stacked as shown in the schematic cross-sectional configuration diagram shown in FIG. 5, and as shown in the cross-sectional configuration diagram, the outer peripheral portion and the internal gap of the flat coil conductor 11 are stacked. The part is filled with an insulator 14.
[0005]
Furthermore central end of the flat coil conductor 11 shown in FIG. 4 (1 part code M), the connection point between MOSFET21a and MOSFET21b (reference numeral M 2 parts), the magnetic material plate 13, insulating plate 31 of each of the through- They are connected via connection conductors (not shown) that pass through the holes.
[0006]
Accordingly, FIG. 4, step-down chopper apparatus shown in FIG. 5 becomes such circuit configuration shown in FIG. 6, the external DC power supply across the series connection circuit (reference numeral P i, N i portion) between MOSFET21a and MOSFET21b 1, a load 2 is connected between the outer peripheral end of the reactor 10 (reference P o ) and the negative terminal (reference N i ) of the external DC power supply 1, and the control circuit 22 causes a MOSFET 21 a to be connected. By alternately turning on and off the MOSFET 21b, a DC voltage stepped down from the DC voltage of the external DC power supply 1 can be supplied to the load 2.
[0007]
[Problems to be solved by the invention]
In the circuit configuration of the conventional step-down chopper device shown in FIG. 6, the capacitor 3 serves to smooth the voltage across the load 2. The capacitor 3 is composed of the reactor 10, the semiconductor substrate 20, and the insulating plate 31. Must be installed outside the integrated structure, which is a factor in increasing the size and cost of the entire power conversion device such as a step-down chopper device.
An object of the present invention is to solve the above-described problems and provide a power converter such as a small-sized and low-cost step-down chopper device.
[0008]
[Means for Solving the Problems]
The power conversion device according to the present invention includes a flat plate coil conductor having an outer peripheral portion and an internal gap filled with an insulator and shaped in a spiral shape, a first magnetic plate covering one plane of the flat plate coil conductor, A reactor formed by integrating a second magnetic plate having a through hole in the central portion covering the other flat surface of the flat coil conductor, and a module formed of a series connection circuit of power semiconductor elements A power conversion circuit, a control circuit that is formed in the same module as the power conversion circuit, is connected to one end of the series connection circuit, and has a through hole in the center. An electrode plate having substantially the same outer peripheral shape as the reactor, and a first insulating plate inserted between the electrode plate and the power conversion circuit and having a through hole in the center and the same outer peripheral shape as the reactor And the electrode plate Inserted between the serial reactors, and has a through hole in the center portion and a second insulating plate of the same outer peripheral shape as the reactor, the center of the intermediate connection point of the series connection circuit the flat coil conductor The ends are connected to each other through the respective through holes.
[0009]
According to the present invention, the power conversion device can be made more compact by making the power conversion device positively using the stray capacitance interposed between the plate coil conductor and the electrode plate laid close to each other. The price can be reduced.
[0010]
DETAILED DESCRIPTION OF THE INVENTION
FIG. 1 is a schematic exploded configuration diagram showing an embodiment of a step-down chopper device that is typical as a power conversion device of the present invention.
FIG. 2 is a schematic cross-sectional configuration diagram of the step-down chopper device shown in FIG.
Further, FIG. 3 is an equivalent circuit configuration diagram of the step-down chopper device shown in FIG.
1 to 3, components having the same functions and structures as those of the conventional apparatus shown in FIGS. 4 to 6 are denoted by the same reference numerals.
[0011]
That is, in the schematic exploded view shown in FIG. 1, the reactor 10 includes a flat coil conductor 11 shaped like a spiral as shown in the figure, a magnetic plate 12 covering one plane of the flat coil conductor 11, and a flat coil conductor. 11 is formed integrally with a magnetic plate 13 having a through hole at the center as shown in the figure, and a series connection circuit of MOSFET 21a and MOSFET 21b as power semiconductor elements is formed on the semiconductor substrate 20. And a control circuit 22 for driving the power conversion circuit 21 are mounted. Furthermore, as shown in the drawing, the electrode plate 23 has a through hole in the center and has substantially the same outer peripheral shape as the reactor 10. end (code N O unit) is connected MOSFET 21, to one end of the series connection circuit of the 21b (code N i part), also the electrode plate 23 and the semiconductor substrate 2 As shown in the figure, an insulating plate 24 having a through hole at the center is inserted between the electrode plate 23 and the reactor 10, and the center between the electrode plate 23 and the reactor 10 as shown in the figure. An insulating plate 31 having a through hole in the part and having the same outer peripheral shape as that of the reactor 10 is inserted.
[0012]
The reactor 10, the insulating plate 31, the electrode plate 23, the insulating plate 24, and the semiconductor substrate 20 shown in FIG. 1 are stacked as shown in the schematic cross-sectional configuration diagram shown in FIG. An insulator 14 is filled in the outer peripheral portion and the internal gap portion of the conductor 11.
[0013]
Furthermore central end of the flat coil conductor 11 shown in FIG. 1 (1 part code M), and a connection point between MOSFET21a and MOSFET21b (code M 2 parts), the magnetic plate 13, insulating plate 31, the electrode plate 23 The insulating plates 24 are connected via connection conductors (not shown) that pass through the through holes.
[0014]
Accordingly, FIG. 1, the step-down chopper device of the configuration shown in FIG. 2 becomes such circuit configuration shown in FIG. 3, the external DC power supply across the series connection circuit (reference numeral P i, N i portion) between MOSFET21a and MOSFET21b 1 DC voltage is supplied from the outer peripheral edge portion of the reactor 10 (reference numeral P o portion), the negative terminal of the external DC power source 1 end of (code N i part) the same potential of the electrode plate 23 (code N O unit ), And the control circuit 22 alternately turns on and off the MOSFET 21a and the MOSFET 21b, so that a DC voltage stepped down from the DC voltage of the external DC power supply 1 can be supplied to the load 2.
[0015]
At this time, as shown in FIG. 2, the stray capacitance C S interposed between the laminated flat plate coil conductors 11 and the electrode plates 23 functions to smooth the voltage across the load 2. In recent years, it has become possible to smooth the voltage across the load 2 with only the stray capacitance C S by using a high-speed power semiconductor element constituting the power converter.
[0016]
【The invention's effect】
According to the present invention, as described above, by making a power conversion device that positively utilizes the stray capacitance interposed between the laminated flat plate coil conductor and the electrode plate, the power conversion device can be made smaller and less expensive. For example, it is a power conversion device suitable as an internal power source of a mobile phone or the like.
Although an example of a step-down chopper device has been described as the power conversion device of the present invention, it can also be applied to a step-up chopper device or the like.
[Brief description of the drawings]
FIG. 1 is a schematic exploded configuration diagram of a power conversion device showing an embodiment of the present invention. FIG. 2 is a schematic cross-sectional configuration diagram of FIG. 1. FIG. 3 is an equivalent circuit configuration diagram of FIG. FIG. 5 is a schematic cross-sectional configuration diagram of FIG. 4. FIG. 6 is a circuit configuration diagram of FIG. 4.
DESCRIPTION OF SYMBOLS 1 ... DC power supply, 2 ... Load, 3 ... Capacitor, 10 ... Reactor, 11 ... Flat coil conductor, 12, 13 ... Magnetic board, 20 ... Semiconductor substrate, 21 ... Power conversion circuit, 21a, 21b ... MOSFET, 22 ... Control circuit, 23 ... electrode plate, 24, 31 ... insulating plate.

Claims (1)

外周部および内部空隙部に絶縁物が充填され、渦巻状に整形された平板コイル導体と、該平板コイル導体の一方の平面を覆う第1磁性体板と、該平板コイル導体の他方の平面を覆う中央部に貫通穴を有する第2磁性体板とを一体化して形成されたリアクトルと、
モジュール化して形成され、電力用半導体素子の直列接続回路で構成された電力変換回路と、
前記電力変換回路と同一モジュール内に形成され、該電力変換回路を駆動する制御回路と、
前記直列接続回路のいずれかの一端に接続され、且つ中央部に貫通穴を有し前記リアクトルとほぼ同一の外周形状の電極板と、
該電極板と前記電力変換回路との間挿設され、且つ中央部に貫通穴を有し前記リアクトルと同一の外周形状の第1絶縁板と、
前記電極板と前記リアクトルとの間挿設され、且つ中央部に貫通穴を有し該リアクトルと同一の外周形状の第2絶縁板とを備え、
前記直列接続回路の中間接続点と前記平板コイル導体の中央端部とを、前記それぞれの貫通穴を介して接続してなることを特徴とする電力変換装置。
An outer peripheral portion and an internal gap are filled with an insulator, and a spirally shaped flat coil conductor, a first magnetic plate covering one flat surface of the flat coil conductor, and the other flat surface of the flat coil conductor A reactor formed by integrating a second magnetic plate having a through hole in the central portion to be covered;
A power conversion circuit formed as a module and configured by a series connection circuit of power semiconductor elements;
A control circuit that is formed in the same module as the power conversion circuit and drives the power conversion circuit;
An electrode plate connected to one end of the series connection circuit and having a through hole in the center and substantially the same outer shape as the reactor;
A first insulating plate that is inserted between the electrode plate and the power conversion circuit and has a through hole in the center and has the same outer peripheral shape as the reactor;
The inserted between the electrode plates and the reactor, and a second insulating plate of the same outer peripheral shape as the reactor and has a through hole in the center portion,
A power conversion device comprising: an intermediate connection point of the series connection circuit and a central end portion of the flat coil conductor connected through the respective through holes.
JP12990099A 1999-05-11 1999-05-11 Power converter Expired - Lifetime JP3635984B2 (en)

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