JP3624628B2 - Film forming method and film forming apparatus - Google Patents

Film forming method and film forming apparatus Download PDF

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Publication number
JP3624628B2
JP3624628B2 JP14585597A JP14585597A JP3624628B2 JP 3624628 B2 JP3624628 B2 JP 3624628B2 JP 14585597 A JP14585597 A JP 14585597A JP 14585597 A JP14585597 A JP 14585597A JP 3624628 B2 JP3624628 B2 JP 3624628B2
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film
metal
thin film
mounting table
gas
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JPH10321558A (en
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国弘 多田
好弘 手塚
和一 林
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to TW087107232A priority patent/TW399237B/en
Priority to KR1019980017960A priority patent/KR100355321B1/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45572—Cooled nozzles
    • C—CHEMISTRY; METALLURGY
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • C23C16/0281—Deposition of sub-layers, e.g. to promote the adhesion of the main coating of metallic sub-layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
    • C23C16/14—Deposition of only one other metal element
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4411—Cooling of the reaction chamber walls
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/4557—Heated nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD

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Description

【０００１】
【発明の属する技術分野】
本発明は、半導体ウエハ等の被処理体にチタン膜などの金属含有膜を形成する成膜方法及び成膜装置に関する。
【０００２】
【従来の技術】
一般に、半導体集積回路を製造するためには、半導体ウエハ等の基板に対して、成膜とパターンエッチング等を繰り返し行なって、多数の所望の素子を形成するようになっている。
ところで、各素子間を接続する配線、各素子に対する電気的コンタクトを図るコンタクトメタル、或いは基板のＳｉの吸上げを抑制する対策として用いられるバリヤメタルとしては、電気抵抗が低いことは勿論のこと、耐腐食性に優れた材料を用いなければならない。
このような要請に対応できる材料として、Ｔｉ（チタン）、Ｗ（タングステン）、Ｍｏ（モリブデン）などの高融点金属材料が使用される傾向にあり、中でも電気的及び耐腐食性などの特性等が良好であることから、特に、Ｔｉ及びこの窒化膜であるＴｉＮ（チタンナイトライド）が多用される傾向にある。
【０００３】
Ｔｉ膜は、一般的には、原料ガスとしてＴｉＣｌ４ （四塩化チタン）ガスと水素ガスを用いてプラズマＣＶＤ（Ｃｈｅｍｉｃａｌ Ｖａｐｏｒ Ｄｅｐｏｓｉｔｉｏｎ）により成膜され、ＴｉＮ膜は、原料ガスとして同じくＴｉＣｌ４ とＮ２ ガスを用いてプラズマレスのＣＶＤにより、或いは窒素存在下のプラズマ成膜により成膜される。
【０００４】
【発明が解決しようとする課題】
ところで、上記成膜に用いる成膜装置の載置台としては一般に耐熱性や耐腐食性に優れているＡｌＮ（窒化アルミ）等のセラミック製の載置台を用いているが、このセラミック製の載置台はかなり高価である。しかも、セラミック自体は導電性が低いために、プラズマＣＶＤ処理時にセラミック製の載置台の載置面内、或いは載置台と例えば処理容器側壁との間で電位差が生じ、これがために処理空間に生成されているプラズマが安定的に生ぜず、プラズマ密度に偏りが生ずる場合があった。
【０００５】
このため、載置台自体を導電性の良好な金属材料により形成して載置面内やこれと容器側壁との間に電位差が生ずることを抑制して、プラズマを安定化させることも考えられるが、この場合には、載置面上に載置される半導体ウエハ自体が載置台を構成する金属により汚染される、いわゆる重金属汚染が生ずるので、そのまま採用することはできない。
【０００６】
また、金属製の載置台の表面に、予めセラミック等よりなるコーティング層を強固に被着させて重金属汚染を防止することも考えられるが、この場合には、金属製の載置台とセラミック製のコーティング層との熱膨張率の相異に起因して、繰り返し成膜によってコーティング層が剥がれたり、或いは割れたりするといった問題があるので採用することはできない。
【０００７】
更には、セラミック材の場合には、熱伝導率が低いことから、ウエハに対する加熱効率もあまり良好でないという問題もある。
本発明は、以上のような問題点に着目し、これを有効に解決すべく創案されたものである。本発明の目的は、載置台にプリコート金属含有薄膜を形成することにより、重金属汚染のない成膜方法及び成膜装置を提供することにある。
【０００８】
【課題を解決するための手段】
本発明は、上記問題点を解決するために、処理容器内の載置台上に載置された被処理体に対してチタン（Ｔｉ）膜、またはチタンナイトライド（ＴｉＮ）膜よりなる金属含有膜を形成する成膜方法において、前記載置台の表面に前記金属含有膜と同じ金属を含む膜であるチタン薄膜とチタンナイトライド薄膜が順次積層された２層構造よりなるプリコート金属含有薄膜を形成し、その後、前記被処理体を前記載置台上に載置した状態で前記被処理体の表面に前記金属含有膜を形成するようにする。
【０００９】
このように、被処理体に対する実際の金属含有膜の成膜に先立って、この金属含有膜に含まれる金属と同じ金属を含む薄膜を載置台の表面にプリコート金属含有薄膜として形成して載置台を覆うようにしたので、被処理体の金属含有膜にプリコート金属含有薄膜中の金属が侵入しても、これらは同種の金属なので、重金属汚染が生ずることはない。
被処理体に形成されるこのような金属含有膜は、例えばチタン（Ｔｉ）膜やチタンナイトライド（ＴｉＮ）膜であり、この時、プリコート金属含有薄膜としては、チタン薄膜またはチタンナイトライド薄膜或いはこれらの２層構造とする。チタンナイトライド薄膜を形成するには、下層のチタン薄膜の上に、チタンナイトライド薄膜を堆積させて積層するようにしてもよいし、或いは下層のチタン薄膜の表面部分を窒化させることにより上層にチタンナイトライド薄膜を形成するようにしてもよい。このように２層構造化することにより、載置台に対するチタン薄膜の密着性を向上させることが可能となる。
【００１０】
【発明の実施の形態】
以下に、本発明に係る成膜方法及び成膜装置の一実施例を添付図面に基づいて詳述する。
図１は本発明の成膜装置の一実施例を示す構成図である。本実施例では、成膜装置により金属膜としてＴｉ（チタン）膜を形成する場合を例にとって説明する。
図示するように、この成膜装置２は、円筒体状に成形された処理容器４を有しており、この処理容器４は接地されている。 この処理容器４の底部６には、容器内の雰囲気を排出するための排気口８が設けられており、この排気口８には真空引きポンプ１０を介設した排気系１２が接続されて、処理容器４内を底部周辺部から均一に真空引きできるようになっている。
【００１１】
この処理容器４内には、導電性材料よりなる支柱１４を介して金属性、例えばハステロイ（商標）よりなる円板状の載置台１６が設けられており、この上に被処理体として例えば半導体ウエハＷを載置し得るようになっている。この載置台１６は、下部電極を兼用するものであり、支柱１４に直接支持される下台１６Ａと、この上面に接合される上台１６Ｂとよりなり、これらの間に抵抗加熱ヒータ１８が挟み込まれている。この下台１６Ａと上台１６Ｂは、その接合面にて例えば溶着により接合される。この載置台１６は、上記したハステロイに限定されず、耐腐食性があって導電性のある金属ならばどのようなものでもよく、例えばステンレス、ニッケル、インコネル（商標）等を用いることができる。
【００１２】
処理容器４の天井部には、上部電極と兼用されるシャワーヘッド２０が一体的に設けられた天井板２２が容器側壁に対して絶縁材２４を介して気密に取り付けられている。このシャワーヘッド２０は、上記載置台１６の上面の略全面を覆うように対向させて設けられており、載置台１６との間に処理空間Ｓを形成している。このシャワーヘッド２０は、処理空間Ｓに各種のガスをシャワー状に導入するものであり、シャワーヘッド２０の下面の噴射面２６にはガスを噴射するための多数の噴射孔２８が形成される。また、このシャワーヘッド２０の内部には、多数の拡散孔３０を有する拡散板３２が設けられてガスを拡散できるようになっている。
そして、このシャワーヘッド２０の上部には、ヘッド内にガスを導入するガス導入ポート３４が設けられており、このガス導入ポート３４にはガスを流す複数、例えば２本の供給通路３６、３８が接続されている。
【００１３】
一方の供給通路３６には、複数の分岐管４０が接続され、各分岐管４０には、成膜用のガスとして、例えばＴｉＣｌ４ ガスを貯留するＴｉＣｌ４ ガス源４２、Ｈ２ ガスを貯留するＨ２ ガス源４４、プラズマガスとして例えばＡｒガスを貯留するＡｒガス源４６、クリーニング時に使用するクリーニングガスとしてＣｌＦ系ガス、例えばＣｌＦ３ ガスを貯留するＣｌＦ３ ガス源４８がそれぞれ接続されている。また、他方の供給通路３８には、成膜用のガスとしてＮ２ ガスを貯留するＮ２ ガス源５０が接続される。そして、各ガスの流量は、それぞれの分岐管４０及び供給通路８０に介設した流量制御器、例えばマスフローコントローラ５２により制御される。ここでは、ＴｉＣｌ４ ガスとＮ２ ガスをシャワーヘッド２０まではそれぞれ別経路搬送し、これらをシャワーヘッド内で混合させるようにしたが、これに限定されず、両ガスを混合状態で搬送するようにしてもよいし、或いはシャワーヘッド２０内も分離した状態で通過させて、処理空間Ｓへ噴射した時に混合させるようにしてもよい。この点については、他のガス、例えばＴｉＣｌ４ 、Ｈ２ 、Ａｒについても同様である。
【００１４】
また、天井板２２には、主にＴｉ成膜時のプラズマを形成するために、リード線５４を介してマッチング回路５６及び例えば１３．５６ＭＨｚのプラズマ用の高周波電源５８が接続されている。
また、処理容器４の側壁には、この壁面の温度調節を行なうために、必要に応じて例えば冷却された、或いは加熱された熱媒体を選択的に流すための容器用温調ジャケット６０が設けられ、このジャケット６０は図示しない温調器に接続される。この容器側壁には、ロードロック室６４との間でウエハの搬入・搬出時に気密に開閉可能になされたゲートバルブ６２が設けられる。
更に、上記シャワーヘッド２０にも、この表面の温度調節を行なうために、必要に応じて例えば冷却された、或いは加熱された熱媒体を選択的に流すためのヘッド用温調ジャケット６６が設けられ、このジャケット６６は図示しない温調器に接続される。尚、温調用の熱媒体としては例えばチラーを用いることができる。
【００１５】
次に、以上のように構成された装置に基づいて行なわれる成膜方法ついて図２も参照して説明する。
本発明方法においては、半導体ウエハＷに対して実際に成膜を行なう前に、ウエハ成膜時と略同種のガスを用いて金属製の載置台の表面に成膜を施してプリコート金属含有薄膜を形成して、載置台を覆う。この場合、ウエハには、Ｔｉ膜を形成することを目的としていることから、このプリコート金属含有薄膜としてＴｉ金属を含有させた薄膜、例えばＴｉ薄膜やＴｉＮ薄膜、或いはこれらの両薄膜を形成することになる。ここでは、上記両薄膜を積層させる場合を例にとって説明する。
【００１６】
まず、半導体ウエハＷを処理容器４内に導入することなく、これを例えばロードロック室６４に待機させておく。この状態では、図２（Ａ）に示すように、金属製の載置台１６の表面には何ら膜が形成されておらず、載置台１６を構成する金属が剥き出し状態となっている。
このように、載置台１６上に何も載置していない状態において、成膜用ガスとしてＴｉＣｌ４ ガスと、Ｈ２ ガスを、プラズマ用ガスとしてＡｒガスを、それぞれシャワーヘッド２０から所定の流量で処理容器４内に導入し、且つ真空引きポンプ１０により処理容器４内を真空引きし、所定の圧力に維持する。
【００１７】
これと同時に、高周波電源５８より、１３．５６ＭＨｚの高周波を上部電極であるシャワーヘッド２０に印加して、シャワーヘッド２０と下部電極としての載置台１６との間に高周波電界を加える。これにより、Ａｒガスがプラズマ化されて、ＴｉＣｌ４ ガスとＨ２ ガスとの還元反応を推進し、図２（Ｂ）に示すように載置台１６の表面全体にこれを覆うようにＴｉ薄膜６８が形成されることになる。このＴｉ薄膜６８は、例えば２００〜３００Å程度の厚みとなるように設定する。このＴｉ薄膜６８は、後述するプリコート金属含有薄膜７２の第１層目の薄膜となる。
【００１８】
載置台１６の温度は、この載置台１６に埋め込んだ抵抗加熱ヒータ１８により所定の温度に加熱される。
また、プラズマにより加熱される傾向にある処理容器４の側壁及びシャワーヘッド２０は、それぞれに設けた容器用温調ジャケット６０及びヘッド用温調ジャケット６６にそれぞれ冷媒を流し、これを所定の温度まで冷却する。
この時のプロセス条件は、載置台温度が、例えば７００℃程度、容器側壁が１３０℃程度、シャワーヘッド２０が１３０℃程度であり、プロセス圧力は１Ｔｏｒｒ程度、高周波電力が７００Ｗ程度である。
また、ガス流量は、例えばＴｉＣｌ４ ガスが２００〜３００ｓｃｃｍ、Ｈ２ ガスが１．５〜２リットル／ｍｉｎ、Ａｒガスが１リットル／ｍｉｎ程度である。
【００１９】
このように、プリコート金属含有薄膜７２の第１層目の薄膜、すなわちＴｉ薄膜６８を形成したならば、処理容器４内を真空引きし、プリコート金属含有薄膜７２の第２層目の薄膜の形成に着手する。
まず、成膜用ガスとしてＴｉＣｌ４ ガスとＮ２ ガスを、それぞれシャワーヘッド２０から所定の流量で処理容器４内に導入し、且つ真空引きポンプ１０により処理容器４内を所定の圧力に維持する。この場合は、高周波を用いないで、すなわちプラズマレスで、熱ＣＶＤにより図２（Ｃ）に示すようにＴｉＮ薄膜７０を覆うように形成する。
【００２０】
このＴｉＮ薄膜７０は例えば２００〜３００Å程度の厚みとなるように設定する。このＴｉＮ薄膜７０は、後述するプリコート金属含有薄膜７２の第２層目の薄膜となる。この時の、プロセス条件は、載置台温度が例えば７００℃程度、容器側壁が１３０℃程度、シャワーヘッド２０が１３０℃程度であり、プロセス圧力は１Ｔｏｒｒ程度である。この時のガス流量は、例えばＴｉＣｌ４ ガスが１０ｓｃｃｍ、Ｎ２ ガスが５０ｓｃｃｍ程度である。
このようにプリコート金属含有薄膜７２を、Ｔｉ薄膜６８とＴｉＮ薄膜７０との２層構造にすることにより、Ｔｉ薄膜６８と載置台１６の載置面との密着性が大幅に向上してこの剥離を防止することができる。
【００２１】
このようにして２層構造の重金属汚染防止用のプリコート金属含有薄膜７２の形成が完了したならば、次に、ウエハ表面への実際の成膜操作に移行する。
まず、ウエハＷを開かれたゲートバルブ６２（図１参照）を介してロードロック室６４から処理容器４内に搬入し（図２（Ｃ））、これを載置台１６上に載置する（図２（Ｅ））。
そして、処理容器４内を気密にした状態で成膜処理を開始する。
まず、ここではウエハ表面にＴｉ膜を成膜する。このＴｉ膜の成膜は、例えば先のプリコート金属含有薄膜７２のＴｉ薄膜６８の成膜時と同じ成膜ガス及びプロセス条件で行なう。すなわち、成膜用ガスとしてＴｉＣｌ４ ガスとＨ２ ガスを、プラズマ用ガスとしてＡｒガスを、それぞれ所定の流量で処理容器４内に導入し、真空引きにより処理容器４内を所定の圧力に維持する。そして、プラズマにアシストされた還元反応により図２（Ｆ）に示すようにウエハ表面に金属含有膜としてＴｉ膜７４を所定の厚みだけ成膜する。
【００２２】
また、必要ならば、次に、このＴｉ膜７４の上に、図２（Ｇ）に示すように金属含有膜としてＴｉＮ膜７６を成膜して、例えばバリヤメタルとしたり、配線構造にしたりする。このＴｉＮ膜７６の成膜ガス及びプロセス条件も例えば、先のプリコート金属含有薄膜７２のＴｉＮ薄膜７０の成膜時と同じ成膜ガス及びプロセス条件で行なう。すなわち、成膜用ガスとしてＴｉＣｌ４ ガスとＮ２ ガスを用いてプラズマレスのＣＶＤにより成膜を行なう。
このように、プリコート金属含有薄膜７２を一旦形成したならば、一定枚数、例えば２０〜２５枚程度のウエハの成膜処理を連続的に行なうが、この間、チタン化合物などの反応副生成物が処理容器４内や内部構造物に付着形成されるので、上述したように一定枚数のウエハの成膜処理が完了した時に容器内のクリーニング処理を行なう。
【００２３】
このクリーニング処理は、クリーニングガスとしてＣｌＦ系ガス、例えばＣｌＦ３ ガスを処理容器４内に流しつつ載置台１６、シャワーヘッド２０、容器側壁等を一定の温度に維持し、内部に付着しているチタン塩化物を気化させて除去することにより行なわれる。このクリーニング処理の際、先に載置台１６に形成したプリコート金属含有薄膜７２も除去されてしまうので、次にウエハ成膜を行なう前には、再度、前述した工程によりプリコート金属含有薄膜７２の成膜を行ない、その後、ウエハに対して実際の成膜処理を行なうことになる。
このように、ウエハ成膜前に、金属製の載置台１６にウエハ成膜に含まれる金属と同じ金属を含む薄膜をプリコート金属含有薄膜７２として形成して載置台表面を覆うようにしたので、載置台１６の金属原子が外側に出ることが抑制され、ウエハに対して、載置台１６の構成金属に起因する重金属汚染が生ずることを防止することができる。
【００２４】
また、ウエハ成膜時に、プリコート金属含有薄膜７２中に含まれるＴｉ金属が、ウエハＷ側に移動しても、ウエハＷの成膜中に含まれる金属と同じ金属なので、この点よりも重金属汚染が生ずることもない。
更に、載置台１６には、例えばハステロイなどの金属材料を用いているので、導電性が良く、従って、プラズマ成膜時に、載置台１６の面内に電位差が生じたり、これと容器側壁との間に電位差が生じたりすることがなくなる。このため、電位差に起因するプラズマ密度の偏りを抑制でき、プラズマ密度を均一化させることができると共に、これを安定した状態で形成維持することができる。
また、載置台１６は熱伝導性の良好な金属で形成されているので、これがセラミック材で形成されている場合と比較して、熱伝導効率を向上させることができる。
【００２５】
図２に示した工程においては、プリコート金属含有薄膜７２を形成する場合に、第１層目のＴｉ薄膜６８を形成した後に、第２層目のＴｉＮ薄膜７０を堆積させて積層するようにしたが、これに限定されず、例えば図３に示すように構成してもよい。すなわち、図３（Ａ）に示すように、載置台１６の表面に、先の第１層目のＴｉ薄膜６８の形成時と同様な成膜方法を用いて、少し厚目のＴｉ薄膜８０を形成する。そして、図３（Ｂ）に示すように、処理容器４内にＮ２ ガスを流しつつプラズマを立てて、先の少し厚目のＴｉ薄膜８０の表面部分を窒化処理する。これにより、図３（Ｃ）に示すように、Ｔｉ薄膜８０の表面部分、或いはもとのＴｉ薄膜８０の上半分程度を窒化処理して第２層目のＴｉＮ薄膜８２を形成し、２層構造のプリコート金属含有薄膜７２を形成するようにしてもよい。
【００２６】
また、上記プリコート金属含有薄膜７２は、２層構造の場合を例にとって説明したが、これに限定されず、例えばプリコート金属含有薄膜７２として図４に示すようにＴｉ薄膜６８のみの１層構造としてもよいし、或いはＴｉＮ薄膜７０のみの１層構造としてもよい。いずれにしても、ウエハの成膜中に含まれる金属と同じ金属を含む薄膜で、金属製の載置台１６の表面を覆うようにすれば、その構造や金属の種類は問わない。
尚、上記実施例においては、成膜中に含有される金属としてチタンを例にとって説明したが、これに限定されず、他の金属、例えばタングステン、モリブデン、アルミニウム等にも適用できるのは勿論である。
更に、被処理体としては、半導体ウエハに限定されず、ガラス基板、ＬＣＤ基板等にも適用することができる。
【００２７】
【発明の効果】
以上説明したように、本発明の成膜方法及び成膜装置によれば、次のような優れた作用効果を発揮することができる。
載置台の表面に、被処理体に形成する金属含有薄膜と同じ金属を含むプリコート金属含有薄膜を付着させて覆うようにしたので、この薄膜に載置台を構成する金属原子が閉じ込められて外側に出ることがなくなり、被処理体に対する重金属汚染を防止することができる。
これにより、重金属汚染を心配することなく導電性の良好な金属材料により載置台を形成できるので、プラズマ分布に悪影響を与える電位差が生ずることを防止でき、プラズマを安定的に且つ均一な分布状態で形成することができる。
また、被処理体にチタン膜やチタンナイトライド膜を形成する際に、プリコート金属含有薄膜として、チタン薄膜とチタンナイトライド薄膜との積層構造を採用することにより、チタン薄膜の載置台に対する密着性を向上させることができ、これが剥がれることを抑制することができる。
【図面の簡単な説明】
【図１】本発明の成膜装置の一実施例を示す構成図である。
【図２】本発明方法を説明するための工程図である。
【図３】本発明方法の変形例を示す工程図である。
【図４】本発明方法の他の変形例を示す工程図である。
【符号の説明】
２ 成膜装置
４ 処理容器
１６ 載置台
１８ 抵抗加熱ヒータ
２０ シャワーヘッド
５８ 高周波電源
６８ Ｔｉ薄膜
７０ ＴｉＮ薄膜
７２ プリコート金属含有薄膜
７４ Ｔｉ膜（金属含有膜）
７６ ＴｉＮ膜（金属含有膜）
８０ Ｔｉ薄膜
８２ ＴｉＮ薄膜
Ｗ 半導体ウエハ（被処理体）[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a film forming method and a film forming apparatus for forming a metal-containing film such as a titanium film on an object to be processed such as a semiconductor wafer.
[0002]
[Prior art]
In general, in order to manufacture a semiconductor integrated circuit, a large number of desired elements are formed by repeatedly performing film formation and pattern etching on a substrate such as a semiconductor wafer.
By the way, as a wiring connecting each element, a contact metal for making an electrical contact with each element, or a barrier metal used as a countermeasure for suppressing the sucking up of Si of the substrate, the electric resistance is low. A highly corrosive material must be used.
Refractory metal materials such as Ti (titanium), W (tungsten), and Mo (molybdenum) tend to be used as materials that can meet such demands. Among them, there are characteristics such as electrical and corrosion resistance. In particular, Ti and TiN (titanium nitride), which is a nitride film, tend to be frequently used.
[0003]
The Ti film is generally formed by plasma CVD (Chemical Vapor Deposition) using TiCl 4 (titanium tetrachloride) gas and hydrogen gas as source gases, and the TiN film is similarly formed by using TiCl 4 and N as source gases. The film is formed by plasmaless CVD using two gases or by plasma film formation in the presence of nitrogen.
[0004]
[Problems to be solved by the invention]
By the way, as a mounting table for the film forming apparatus used for the film formation, a ceramic mounting table such as AlN (aluminum nitride) which is generally excellent in heat resistance and corrosion resistance is used. Is quite expensive. In addition, since the ceramic itself has low conductivity, a potential difference occurs in the mounting surface of the ceramic mounting table or between the mounting table and, for example, the side wall of the processing vessel during the plasma CVD process, which is generated in the processing space. In some cases, the plasma is not stably generated, and the plasma density is uneven.
[0005]
For this reason, it is conceivable to stabilize the plasma by forming the mounting table itself from a metal material having good conductivity and suppressing the occurrence of a potential difference in the mounting surface or between this and the container side wall. In this case, since the semiconductor wafer itself placed on the placement surface is contaminated by the metal constituting the placement table, so-called heavy metal contamination occurs, it cannot be adopted as it is.
[0006]
It is also conceivable to prevent heavy metal contamination by firmly attaching a coating layer made of ceramic or the like to the surface of the metal mounting table in advance. In this case, the metal mounting table and the ceramic mounting table may be used. Due to the difference in coefficient of thermal expansion with the coating layer, there is a problem that the coating layer is peeled off or cracked due to repeated film formation, and thus cannot be employed.
[0007]
Furthermore, in the case of a ceramic material, since the thermal conductivity is low, there is also a problem that the heating efficiency for the wafer is not so good.
The present invention has been devised to pay attention to the above problems and to effectively solve them. An object of the present invention is to provide a film forming method and a film forming apparatus free from heavy metal contamination by forming a precoat metal-containing thin film on a mounting table.
[0008]
[Means for Solving the Problems]
In order to solve the above problems, the present invention provides a metal-containing film made of a titanium (Ti) film or a titanium nitride (TiN) film on an object to be processed placed on a mounting table in a processing container. a film forming method for forming a pre-coat metal-containing thin titanium thin film and the titanium nitride thin film is a film containing the same metal is formed of two-layer structure, which are sequentially laminated with the metal-containing film on the surface of the mounting table Then, the metal-containing film is formed on the surface of the object to be processed in a state where the object to be processed is placed on the mounting table.
[0009]
Thus, prior to the actual metal-containing film formation on the object to be processed, a thin film containing the same metal as the metal contained in the metal-containing film is formed on the surface of the mounting table as a pre-coated metal-containing thin film. Therefore, even if the metal in the precoat metal-containing thin film penetrates into the metal-containing film of the object to be processed, heavy metal contamination does not occur because these are the same kind of metal.
Such a metal-containing film formed on the object to be processed is, for example, a titanium (Ti) film or a titanium nitride (TiN) film. At this time, as the precoat metal-containing thin film, a titanium thin film or a titanium nitride thin film or These two-layer structures are used. In order to form a titanium nitride thin film, the titanium nitride thin film may be deposited and laminated on the lower titanium thin film, or the surface portion of the lower titanium thin film may be nitrided to form an upper layer. A titanium nitride thin film may be formed. By forming the two-layer structure in this way, it becomes possible to improve the adhesion of the titanium thin film to the mounting table.
[0010]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, an embodiment of a film forming method and a film forming apparatus according to the present invention will be described in detail with reference to the accompanying drawings.
FIG. 1 is a block diagram showing an embodiment of a film forming apparatus of the present invention. In this embodiment, a case where a Ti (titanium) film is formed as a metal film by a film forming apparatus will be described as an example.
As shown in the figure, the film forming apparatus 2 has a processing container 4 formed in a cylindrical shape, and the processing container 4 is grounded. An exhaust port 8 for exhausting the atmosphere in the container is provided at the bottom 6 of the processing container 4, and an exhaust system 12 having a vacuum pump 10 is connected to the exhaust port 8. The inside of the processing container 4 can be evacuated uniformly from the bottom periphery.
[0011]
In the processing container 4, a disk-like mounting table 16 made of metallic material, for example, Hastelloy (trademark) is provided via a support 14 made of a conductive material. A wafer W can be placed thereon. The mounting table 16 also serves as a lower electrode. The mounting table 16 includes a lower table 16A that is directly supported by the support column 14 and an upper table 16B that is bonded to the upper surface. A resistance heater 18 is sandwiched therebetween. Yes. The lower base 16A and the upper base 16B are joined together by welding, for example, at the joint surface. The mounting table 16 is not limited to Hastelloy described above, and may be any metal as long as it has corrosion resistance and conductivity. For example, stainless steel, nickel, Inconel (trademark), or the like can be used.
[0012]
A ceiling plate 22 integrally provided with a shower head 20 that also serves as an upper electrode is attached to the ceiling portion of the processing vessel 4 in an airtight manner with respect to the side wall of the vessel via an insulating material 24. The shower head 20 is provided so as to face almost the entire upper surface of the mounting table 16, and a processing space S is formed between the shower head 20 and the mounting table 16. The shower head 20 introduces various gases into the processing space S in a shower shape, and a plurality of injection holes 28 for injecting gas are formed on the injection surface 26 on the lower surface of the shower head 20. In addition, a diffusion plate 32 having a large number of diffusion holes 30 is provided inside the shower head 20 so that gas can be diffused.
A gas introduction port 34 for introducing gas into the head is provided at the upper portion of the shower head 20. A plurality of, for example, two supply passages 36 and 38 for flowing gas are provided in the gas introduction port 34. It is connected.
[0013]
A plurality of branch pipes 40 are connected to one supply passage 36, and each branch pipe 40 stores, for example, a TiCl 4 gas source 42 that stores TiCl 4 gas as a film forming gas, and H 2 gas. An H 2 gas source 44, an Ar gas source 46 for storing, for example, Ar gas as a plasma gas, and a ClF 3 gas source 48 for storing a ClF-based gas, for example, ClF 3 gas, are used as cleaning gases for cleaning. The other supply passage 38 is connected to an N 2 gas source 50 that stores N 2 gas as a film forming gas. The flow rate of each gas is controlled by a flow rate controller such as a mass flow controller 52 provided in each branch pipe 40 and the supply passage 80. Here, TiCl 4 gas and N 2 gas are separately conveyed to the shower head 20 and mixed in the shower head, but the present invention is not limited to this, and both gases are conveyed in a mixed state. Alternatively, the inside of the shower head 20 may be separated, and mixed when sprayed into the processing space S. The same applies to other gases such as TiCl 4 , H 2 , and Ar.
[0014]
In addition, a matching circuit 56 and a high frequency power source 58 for plasma of, for example, 13.56 MHz are connected to the ceiling plate 22 through lead wires 54 in order to mainly form plasma during Ti film formation.
Further, in order to adjust the temperature of the wall surface, for example, a temperature control jacket 60 for the container for selectively flowing a cooled or heated heat medium is provided on the side wall of the processing container 4 as necessary. The jacket 60 is connected to a temperature controller (not shown). On the side wall of the container, a gate valve 62 is provided that can be opened and closed in an airtight manner when a wafer is loaded into and unloaded from the load lock chamber 64.
Further, the shower head 20 is also provided with a head temperature control jacket 66 for selectively flowing, for example, a cooled or heated heat medium as necessary in order to adjust the surface temperature. The jacket 66 is connected to a temperature controller (not shown). For example, a chiller can be used as the temperature control heat medium.
[0015]
Next, a film forming method performed based on the apparatus configured as described above will be described with reference to FIG.
In the method of the present invention, before the film is actually formed on the semiconductor wafer W, the pre-coated metal-containing thin film is formed on the surface of the metal mounting table using a gas substantially the same as that used for the wafer film formation. To cover the mounting table. In this case, since the purpose is to form a Ti film on the wafer, a thin film containing Ti metal, for example, a Ti thin film, a TiN thin film, or both of these thin films is formed as the precoat metal-containing thin film. become. Here, a case where both the thin films are laminated will be described as an example.
[0016]
First, without introducing the semiconductor wafer W into the processing container 4, for example, the load is kept in the load lock chamber 64. In this state, as shown in FIG. 2 (A), no film is formed on the surface of the metal mounting table 16, and the metal constituting the mounting table 16 is exposed.
Thus, in a state where nothing is placed on the mounting table 16, TiCl 4 gas and H 2 gas are used as the film forming gas, and Ar gas is used as the plasma gas from the shower head 20 at a predetermined flow rate. And the inside of the processing container 4 is evacuated by the vacuum pump 10 and maintained at a predetermined pressure.
[0017]
At the same time, a high frequency of 13.56 MHz is applied from the high frequency power source 58 to the shower head 20 as the upper electrode, and a high frequency electric field is applied between the shower head 20 and the mounting table 16 as the lower electrode. As a result, the Ar gas is turned into plasma to promote the reduction reaction between the TiCl 4 gas and the H 2 gas, and the Ti thin film 68 is covered over the entire surface of the mounting table 16 as shown in FIG. 2B. Will be formed. The Ti thin film 68 is set to have a thickness of about 200 to 300 mm, for example. The Ti thin film 68 is a first thin film of a precoat metal-containing thin film 72 described later.
[0018]
The temperature of the mounting table 16 is heated to a predetermined temperature by a resistance heater 18 embedded in the mounting table 16.
Further, the side wall of the processing vessel 4 and the shower head 20 that tend to be heated by the plasma flow the refrigerant through the container temperature control jacket 60 and the head temperature control jacket 66 respectively provided to the predetermined temperature. Cooling.
The process conditions at this time are a mounting table temperature of, for example, about 700 ° C., a container side wall of about 130 ° C., a shower head 20 of about 130 ° C., a process pressure of about 1 Torr, and a high-frequency power of about 700 W.
The gas flow rates are, for example, about 200 to 300 sccm for TiCl 4 gas, 1.5 to 2 liter / min for H 2 gas, and about 1 liter / min for Ar gas.
[0019]
In this way, when the first thin film of the precoat metal-containing thin film 72, that is, the Ti thin film 68 is formed, the inside of the processing container 4 is evacuated to form the second thin film of the precoat metal-containing thin film 72. Embark on.
First, TiCl 4 gas and N 2 gas are introduced from the shower head 20 into the processing container 4 at a predetermined flow rate as film forming gases, respectively, and the inside of the processing container 4 is maintained at a predetermined pressure by the vacuum pump 10. . In this case, the TiN thin film 70 is formed by thermal CVD without using a high frequency, that is, without plasma, as shown in FIG. 2C.
[0020]
The TiN thin film 70 is set to have a thickness of about 200 to 300 mm, for example. The TiN thin film 70 is a second thin film of a precoat metal-containing thin film 72 described later. The process conditions at this time are a mounting table temperature of about 700 ° C., a container side wall of about 130 ° C., a shower head 20 of about 130 ° C., and a process pressure of about 1 Torr. The gas flow rate at this time is, for example, about 10 sccm for TiCl 4 gas and about 50 sccm for N 2 gas.
Thus, by making the precoat metal-containing thin film 72 into a two-layer structure of the Ti thin film 68 and the TiN thin film 70, the adhesion between the Ti thin film 68 and the mounting surface of the mounting table 16 is greatly improved, and this peeling is performed. Can be prevented.
[0021]
When the formation of the precoat metal-containing thin film 72 for preventing heavy metal contamination having a two-layer structure is completed in this way, the process proceeds to an actual film forming operation on the wafer surface.
First, the wafer W is loaded into the processing container 4 from the load lock chamber 64 via the opened gate valve 62 (see FIG. 1) (FIG. 2C) and placed on the mounting table 16 (see FIG. 2C). FIG. 2 (E)).
Then, the film forming process is started in a state where the inside of the processing container 4 is airtight.
First, here, a Ti film is formed on the wafer surface. This Ti film is formed, for example, under the same film forming gas and process conditions as those for forming the Ti thin film 68 of the precoat metal-containing thin film 72. That is, TiCl 4 gas and H 2 gas as film forming gases and Ar gas as plasma gases are introduced into the processing container 4 at a predetermined flow rate, respectively, and the processing container 4 is maintained at a predetermined pressure by evacuation. To do. Then, a Ti film 74 having a predetermined thickness is formed on the wafer surface as a metal-containing film by a plasma-assisted reduction reaction as shown in FIG. 2 (F).
[0022]
If necessary, a TiN film 76 is formed as a metal-containing film on the Ti film 74 as shown in FIG. 2G, for example, to form a barrier metal or a wiring structure. The deposition gas and process conditions for the TiN film 76 are also the same as the deposition gas and process conditions used when the TiN thin film 70 of the precoat metal-containing thin film 72 is formed. That is, film formation is performed by plasmaless CVD using TiCl 4 gas and N 2 gas as film formation gases.
As described above, once the precoat metal-containing thin film 72 is formed, a predetermined number of wafers, for example, about 20 to 25 wafers, are continuously formed. During this time, reaction byproducts such as titanium compounds are processed. Since it adheres to the inside of the container 4 and the internal structure, as described above, the cleaning process inside the container is performed when the film forming process for a predetermined number of wafers is completed.
[0023]
In this cleaning process, a ClF-based gas, for example, ClF 3 gas, is flowed into the processing container 4 as a cleaning gas, and the mounting table 16, the shower head 20, the container side wall and the like are maintained at a constant temperature, and titanium adhered to the inside. This is done by evaporating and removing the chloride. During this cleaning process, the precoat metal-containing thin film 72 previously formed on the mounting table 16 is also removed. Therefore, before performing the next wafer film formation, the precoat metal-containing thin film 72 is again formed by the above-described process. A film is formed, and then an actual film forming process is performed on the wafer.
Thus, before the wafer film formation, a thin film containing the same metal as the metal included in the wafer film formation is formed on the metal mounting table 16 as the precoat metal-containing thin film 72 so as to cover the surface of the mounting table. It is possible to suppress the metal atoms of the mounting table 16 from going outside, and it is possible to prevent heavy metal contamination due to the constituent metal of the mounting table 16 from occurring on the wafer.
[0024]
In addition, even when the Ti metal contained in the precoat metal-containing thin film 72 is moved to the wafer W side during the film formation of the wafer, it is the same metal as that contained in the film formation of the wafer W. Does not occur.
Further, since the mounting table 16 is made of a metal material such as Hastelloy, for example, it has good conductivity. Therefore, a potential difference is generated in the surface of the mounting table 16 during plasma film formation. There is no potential difference between them. For this reason, it is possible to suppress the deviation of the plasma density due to the potential difference, to make the plasma density uniform, and to maintain the formation in a stable state.
Moreover, since the mounting table 16 is made of a metal having good thermal conductivity, the heat conduction efficiency can be improved as compared with the case where it is made of a ceramic material.
[0025]
In the step shown in FIG. 2, when the precoat metal-containing thin film 72 is formed, the second TiN thin film 70 is deposited and laminated after the first Ti thin film 68 is formed. However, the present invention is not limited to this, and may be configured as shown in FIG. 3, for example. That is, as shown in FIG. 3A, a slightly thick Ti thin film 80 is formed on the surface of the mounting table 16 by using the same film forming method as that for forming the first thin Ti film 68 of the first layer. Form. Then, as shown in FIG. 3B, plasma is generated while N 2 gas is allowed to flow into the processing container 4, and the surface portion of the slightly thick Ti thin film 80 is nitrided. As a result, as shown in FIG. 3C, the surface portion of the Ti thin film 80 or the upper half of the original Ti thin film 80 is nitrided to form a second TiN thin film 82. A precoat metal-containing thin film 72 having a structure may be formed.
[0026]
Further, the precoat metal-containing thin film 72 has been described by taking the case of a two-layer structure as an example. However, the present invention is not limited to this. For example, as the precoat metal-containing thin film 72, as shown in FIG. Or it is good also as a 1 layer structure of only the TiN thin film 70. In any case, as long as the surface of the metal mounting table 16 is covered with a thin film containing the same metal as that contained during film formation of the wafer, the structure and the type of metal are not limited.
In the above embodiment, titanium has been described as an example of the metal contained in the film formation. However, the present invention is not limited to this and can be applied to other metals such as tungsten, molybdenum, and aluminum. is there.
Furthermore, the object to be processed is not limited to a semiconductor wafer, and can be applied to a glass substrate, an LCD substrate, and the like.
[0027]
【The invention's effect】
As described above, according to the film forming method and film forming apparatus of the present invention, the following excellent effects can be exhibited.
Since the precoat metal-containing thin film containing the same metal as the metal-containing thin film to be processed is attached to the surface of the mounting table and covered, the metal atoms constituting the mounting table are confined to this thin film on the outside. It can be prevented from coming out and heavy metal contamination to the object to be treated can be prevented.
As a result, the mounting table can be formed of a metal material having good conductivity without worrying about heavy metal contamination, so that it is possible to prevent potential differences that adversely affect the plasma distribution, and the plasma can be stably and uniformly distributed. Can be formed.
In addition, when a titanium film or a titanium nitride film is formed on an object to be processed, the adhesion of the titanium thin film to the mounting table is achieved by adopting a laminated structure of a titanium thin film and a titanium nitride thin film as the precoat metal-containing thin film. Can be improved, and it can be prevented from peeling off.
[Brief description of the drawings]
FIG. 1 is a configuration diagram showing an embodiment of a film forming apparatus of the present invention.
FIG. 2 is a process diagram for explaining the method of the present invention.
FIG. 3 is a process diagram showing a modification of the method of the present invention.
FIG. 4 is a process diagram showing another modification of the method of the present invention.
[Explanation of symbols]
2 Film-forming apparatus 4 Processing container 16 Mounting stand 18 Resistance heater 20 Shower head 58 High frequency power supply 68 Ti thin film 70 TiN thin film 72 Precoat metal containing thin film 74 Ti film (metal containing film)
76 TiN film (metal-containing film)
80 Ti thin film 82 TiN thin film W Semiconductor wafer (object to be processed)

Claims (6)

処理容器内の載置台上に載置された被処理体に対してチタン（Ｔｉ）膜、またはチタンナイトライド（ＴｉＮ）膜よりなる金属含有膜を形成する成膜方法において、前記載置台の表面に前記金属含有膜と同じ金属を含む膜であるチタン薄膜とチタンナイトライド薄膜が順次積層された２層構造よりなるプリコート金属含有薄膜を形成し、その後、前記被処理体を前記載置台上に載置した状態で前記被処理体の表面に前記金属含有膜を形成するようにしたことを特徴とする成膜方法。In the film forming method for forming a metal-containing film made of a titanium (Ti) film or a titanium nitride (TiN) film on an object to be processed mounted on a mounting table in a processing container, the surface of the mounting table the metal-containing film precoating metal-containing thin titanium thin film and the titanium nitride thin film is a film containing the same metal is formed of two-layer structure, which are sequentially stacked and is formed, then, the stage before describing the object to be processed in A film forming method, wherein the metal-containing film is formed on a surface of the object to be processed while being placed on the surface. 前記載置台は金属製であることを特徴とする請求項１記載の成膜方法。The film forming method according to claim 1, wherein the mounting table is made of metal. 前記チタンナイトライド薄膜は、前記チタン薄膜の表面部分を窒化処理することにより形成されることを特徴とする請求項１または２記載の成膜方法。3. The film forming method according to claim 1, wherein the titanium nitride thin film is formed by nitriding a surface portion of the titanium thin film. 前記チタンナイトライド薄膜は、前記チタン薄膜を形成し、この上に前記チタンナイトライド薄膜を積層させることによって形成されることを特徴とする請求項１または２記載の成膜方法。3. The film forming method according to claim 1, wherein the titanium nitride thin film is formed by forming the titanium thin film and laminating the titanium nitride thin film thereon. 処理容器内の載置台上に載置された被処理体に対してチタン（Ｔｉ）膜、またはチタンナイトライド（ＴｉＮ）膜よりなる金属含有膜を形成する成膜装置において、前記載置台の表面には、前記金属含有膜に含まれる金属と同じ金属を含む膜であるチタン薄膜とチタンナイトライド薄膜が順次積層された２層構造よりなるプリコート金属含有薄膜が形成されることを特徴とする成膜装置。In a film forming apparatus for forming a metal-containing film made of a titanium (Ti) film or a titanium nitride (TiN) film on an object to be processed placed on a mounting table in a processing container, the surface of the mounting table the, the feature that the precoating metal-containing thin film made of two-layer structure in which a titanium thin film and the titanium nitride thin film is a film containing the same metal as the metal-containing film are sequentially laminated is formed A film forming apparatus. 前記載置台は金属製であることを特徴とする請求項５記載の成膜装置。6. The film forming apparatus according to claim 5, wherein the mounting table is made of metal.
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