JP3619006B2 - Image forming apparatus - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to an image forming apparatus such as an image display apparatus using an electron source.
[0002]
[Prior art]
Conventionally, CRT has been widely used as an image forming apparatus that displays an image using an electron beam.
[0003]
In recent years, flat-panel display devices using liquid crystals have become popular instead of CRTs. However, since they are not self-luminous, there are problems such as having to have a backlight. Development has been desired. As a self-luminous display device, a plasma display has recently been commercialized, but the principle of light emission is different from that of a conventional CRT, and it is currently inferior to a CRT in terms of image contrast and color development. It is. On the other hand, if a plurality of electron-emitting devices are arranged and used in a flat image forming apparatus, it is expected that an image having the same quality as that of a CRT can be obtained, and much research and development has been conducted. For example, JP-A-4-163833 discloses a flat-plate electron beam image forming apparatus in which a linear hot cathode and a complicated electrode structure are enclosed in a vacuum vessel.
[0004]
In an image forming apparatus using an electron source, for example, a part of an electron beam incident on an image forming member is scattered and collides with an inner wall of a vacuum container to emit secondary electrons to increase the potential of that part. May be charged up. As a result, the electric potential distribution inside the vacuum vessel is distorted and the trajectory of the electron beam becomes unstable, and there is a problem that electric discharge is generated inside the device, which may cause deterioration or destruction of the device. Yes.
[0005]
That is, since the potential of the charged-up portion becomes high, electrons are attracted, the charge-up further proceeds, and a discharge is generated along the inner wall of the vacuum vessel. As a method for preventing charge-up of the inner wall of the vacuum vessel, which causes such discharge, a method of forming an antistatic film having an appropriate impedance on the inner wall of the vacuum vessel and removing the charge generated as described above Is applicable. As an example to which such a method is applied, JP-A-4-163833 discloses a configuration in which a conductive layer made of a high-impedance conductive material is provided on the inner wall side surface of a glass container of an image forming apparatus.
[0006]
[Problems to be solved by the invention]
However, the flat electron beam image forming apparatus described in JP-A-4-163833 has a certain thickness because it includes a structure such as a horizontal deflection electrode and a vertical deflection electrode. On the other hand, as a portable information terminal device in recent years, it is necessary to develop an electron beam image forming apparatus that is light and thin, for example, as thin as a liquid crystal display.
[0007]
As an image forming apparatus that can achieve this reduction in thickness, the present applicant has already made many proposals regarding a surface conduction electron-emitting device and an image forming apparatus using the same. For example, it is described in JP-A-7-235255. Since this electron-emitting device has a simple configuration and can be formed by being integrated in a large area, an image display device can be formed without complicated components such as an electrode structure. Can be used.
[0008]
By the way, a voltage for accelerating electrons is applied between the electron source and the image forming member. When a phosphor having a color similar to that of CRT is used as the image forming member, light emission with a preferable color is obtained. In this case, this voltage is preferably as high as possible, and is preferably at least about several kV.
[0009]
In that case, when the thickness of the image forming apparatus is reduced, the distance along the inner wall of the vacuum vessel between the image forming member and the electron source is shortened, and the risk of occurrence of discharge increases.
[0010]
That is, a voltage for accelerating the electrons is applied between the image forming member and the electron source. When the distance along the inner wall of the vacuum container is shortened, the voltage is stronger along the inner wall of the vacuum container. An electric field is generated. As described above, the electrons collide with the inner wall of the vacuum vessel to generate secondary electrons, thereby causing the charge up. However, the secondary electrons accelerated by the strong electric field are incident on the inner wall of the vacuum again, It seems that discharge along the inner wall of the vacuum vessel is caused by repeating generation of secondary electrons.
[0011]
Thus, as the thickness of the image forming apparatus becomes thinner, the possibility of occurrence of discharge becomes larger, and thus the above-described conventional method of the image forming apparatus may not be sufficient.
[0012]
When the above discharge occurs along the inner wall of the vacuum vessel, a large current temporarily flows. This current mainly flows into the electron source and flows to the ground through wiring connected to the electron source.
[0013]
At this time, if the current passes through the electron-emitting device constituting the electron source and the current exceeds the range during normal driving, the performance may be deteriorated or possibly destroyed. In this case, the quality of the image is remarkably deteriorated such that a part of the image is not displayed, and the image forming apparatus cannot be used.
[0014]
Further, when a current generated by discharge flows into the electron source driving circuit through the electron source driving wiring, this circuit may be damaged.
[0015]
The present invention has been made in view of the above-described conventional example, and a main object of the present invention is to drive an electron source and an electron source, in particular, even if a discharge occurs in an image forming apparatus using an electron source. An object of the present invention is to provide an image forming apparatus that can reduce the possibility of circuit deterioration and damage as much as possible.
[0016]
[Means for Solving the Problems]
The present invention relates to a container and the container of Inside Part In Facing each other An arranged electron source and an imaging member; Said Electron source For driving An image forming apparatus comprising: Said With electron source Said Between the imaging member Said Conductive member on the inner wall of the container And an antistatic film electrically connected to the conductive member, With There is a first current flow path that exists between the conductive member and the ground and through which neither the electron source nor the drive circuit passes, and the resistance of the first current flow path is It exists between the conductive member and the ground, and is lower than the resistance of a second current flow path through which current flows through the electron source or the drive circuit, and the conductive member is provided with the electron source. Arranged around the entire circumference of the electron source. An image forming apparatus characterized by the above.
[0017]
Hereinafter, preferred embodiments will be described and the present invention will be described in detail.
[0018]
The image forming apparatus according to the present invention is disposed on one inner surface of the pair of plane plates, for example, in a vacuum container constituted by a pair of opposed plane plates and a side member positioned between the plane plates. An electron source in which a plurality of image forming apparatuses are arranged (hereinafter, a plane plate on the side where the electron source is formed is referred to as a “rear plate”); An image forming member that forms an image by irradiation of an electron beam emitted from the electron source (hereinafter, a plane plate on the side where the image forming member is formed is referred to as a “face plate”), and the electron source and the An image forming apparatus in which a voltage for accelerating electrons is applied between an image forming member and a low resistance conductor disposed around the electron source on the rear plate, and the low resistance conductor and a ground Low impedance between To condition for inclusion image forming apparatus connected with Nagareryuro (hereinafter referred to as "ground connection line"). In the above example, it is natural that the impedance of the ground connection line is preferably as small as possible. However, when a discharge occurs, most of the discharge current flows to the ground through the low resistance conductor and the ground connection line, to the electron source. It is necessary to sufficiently reduce the flowing current.
[0019]
How much of the discharge current flows through the low-resistance conductor and the ground connection line depends on the ratio of the impedance of this current flow path and the other current flow paths (hereinafter referred to as Z and Z ', respectively). Since it depends on the frequency, it is necessary to consider what frequency component the discharge phenomenon has.
[0020]
When the discharge generated along the inner wall of the vacuum vessel was observed with the flat plate type electron beam image forming apparatus, it was as follows. The discharge duration is μsec. Although it is an order, the time for which a large current value is observed is 1/10 of 0.1 μsec. It is about time. Therefore, it is necessary that Z is sufficiently smaller than Z ′ at a frequency of 10 MHz or less. At higher frequencies, the contained components gradually become smaller, but the rise of the discharge phenomenon is extremely fast, and components near 1 GHz are also included. Therefore, in order to avoid damage due to discharge more reliably, it is necessary that Z is sufficiently smaller than Z ′ at a frequency of 1 GHz or less.
[0021]
As will be described later, this condition is substantially satisfied when the resistance value of the ground connection line is 1/10 or less, preferably 1/100 or less of the resistance value of the other current flow path.
[0022]
FIG. 11A is an equivalent circuit diagram showing a simplified state of a portion related to discharge in order to explain the flow of current when discharge occurs in the image forming apparatus of the present invention. FIG. 11B is a cross-sectional view schematically showing the discharge current flow path shown in FIG. In the figure, 1 is a rear plate, 2 is an electron source, 3 is an electron source drive wiring, 4 is a support frame, 5 is a low resistance conductor, 11 is a face plate, 12 is an image forming member, and 13 is an insulating member. The insulating member 13 is composed of an insulating layer formed by a printing method or the like, or an insulating plate made of glass or ceramics. The insulating member 13 may be formed by applying a glass paste by a printing method and baking all to form an insulating layer, and a part of the insulating member 13 is made of the above-mentioned glass or ceramic plate to ensure a sufficiently high withstand voltage. You may do it.
[0023]
This example shows a case where an antistatic film is provided on the inner wall of the vacuum vessel, and 14 is an antistatic film. A point 61 in FIG. 11A corresponds to the image forming member 12, and 62 corresponds to the low resistance conductor 5. Reference numeral 65 denotes an electron emitting element constituting the electron source 2, and 63 and 64 denote both end electrodes of the electron emitting element 2. Electron emitting device 65 Usually, there are a plurality of them, but only one is shown in the figure for simplicity. Reference numeral 66 denotes a capacity between the image forming member 12 and the electron source 2.
[0024]
Z ₁ Is an impedance between the image forming member 12 and the low-resistance conductor 5, and normally has a relatively large impedance due to the antistatic film 14 (when no discharge is generated), but is effective when a discharge occurs. In particular, the impedance is greatly reduced and the current I flows. Z ₂ Is the current i corresponding to the current path A flowing from the low resistance conductor 5 itself to the ground. ₁ Is the impedance. Z ₃ Is a current i that flows to the ground through the insulating layer, the glass of the vacuum container, the frit glass used for bonding, and the support of the image forming apparatus. ₂ However, if the resistance value of the insulating layer is sufficiently increased, 12 is actually extremely small and can be ignored. Z ₄ Passes through the antistatic film 14 and flows into the electron source 2 and then flows through the electron source driving wiring 3 to the ground i. ₃ The impedance with respect to is shown. Z ₅ Flows into the electron source through the antistatic film 14 and the like, and the current i flows into the electron-emitting device 2. ₄ Impedance against Z ₆ Passes through the electron-emitting device 2 and then flows through the opposite wiring to the ground (also i ₄ ) Impedance.
[0025]
Note that although a driving circuit is connected to the electron source driving wiring 3 and there are strictly complicated elements such as capacitive coupling between the respective constituent elements, FIG. 11A is a gist of the present invention. Only the important elements are shown to facilitate understanding.
[0026]
When the discharge current flows into the low-resistance conductor, most of the current flows to the ground through the ground connection line (the current i in the current flow path A). ₁ ), The current i corresponding to the other current flow path B ₂ , I ₃ , I ₄ Should be small enough. Where i ₄ The current shown in FIG. 5 causes damage to the electron-emitting device. i ₂ Although the current shown in FIG. 1 was not mentioned in the above description, it still deteriorates the vacuum vessel and the frit glass. As described above, by increasing the resistance value of the insulating layer sufficiently, i ₂ Can be small. Impedance Z in the figure ₂ Is equivalent to the aforementioned Z, ₃ ~ Z ₆ The impedance synthesized by this corresponds to the aforementioned Z ′. The smaller the value of (Z / Z ′), the greater the effect, but in order to obtain a sufficient effect, it is necessary that (Z / Z ′) ≦ 1/10 at a frequency of 10 MHz or less, and (Z / Z ′) It is more certain if ′) ≦ 1/100. Further, even at a frequency of 1 GHz or less, (Z / Z ′) or less is preferably 1/10.
[0027]
In the above description, the case where the antistatic film 14 is formed on the inner wall of the vacuum container is shown. This reduces the possibility of charge-up and is a more preferred form in the present invention, but is not necessarily required. If the sheet resistance value of the antistatic film 14 is too large, the effect is not obtained, so that a certain degree of conductivity is required. However, if the resistance value is too small, a normal state between the image forming member 12 and the low resistance conductor 5 is required. Since the current flowing through increases the power consumption, it is necessary to increase the resistance within a range not impairing the effect. Depending on the shape of the image forming apparatus, the sheet resistance value is 10 ⁸ -10 ¹⁰ A range of Ω / □ is preferred.
[0028]
The low-resistance conductor 5 of the image forming apparatus according to the present invention is the most reliable form to completely surround the electron source 2, but is not limited to such a form. It is also possible to install it only on the side where the discharge is likely to occur. For example, when the momentum of electrons emitted from the electron-emitting devices constituting the electron source 2 has a component in a specific direction in the in-plane direction of the rear plate 1 on which the electron source 2 is disposed, the image forming member 12 scatters. It is considered that most of the generated electrons collide with a portion in the specific direction of the inner wall of the vacuum vessel, and a possibility that discharge occurs in this portion is increased. In this case, an effect can be expected if the low-resistance conductor 5 is disposed on the side of the electron source 2 in that direction.
[0029]
Of the ground connection line of the image forming apparatus according to the present invention, the portion connecting the inside and the outside of the vacuum vessel (hereinafter referred to as “ground connection terminal”) is only required to secure a sufficiently low impedance, and various forms are possible. . As an example, it is relatively easy to form wiring on the rear plate 1 from the low-resistance conductor 5 to one end of the rear plate 1 and pass between the rear plate and the support frame joined by frit glass. To reduce the impedance of the wiring, it is desirable to increase the width and thickness of the wiring as much as possible. However, if the thickness is increased too much, it becomes difficult to assemble the vacuum vessel. The width of the wiring can be increased to a degree slightly smaller than the width of the rear plate on the side where the wiring is extended. In this case, if the wiring 3 for driving the electron source is laminated via an insulating layer, for example, Since a large capacitance is formed between the two and there is a possibility that the driving of the electron source 2 may be affected, it is necessary to devise measures to avoid it. It is desirable to form a ground connection terminal in a portion where the driving wiring 3 is not formed.
[0030]
As described above, increasing the width so as to reduce the impedance of the ground connection terminal means that a part of the current leaks into the frit glass when the current due to the discharge flows, and the frit glass is Although it is naturally effective to prevent damage, in order to make it more reliable, a through-hole provided in the face plate 11 or the rear plate 1 is used to make a metal rod of sufficient thickness substantially. It is preferable to use a ground connection terminal covered with an insulator that does not flow an ionic current, for example, ceramics such as alumina.
[0031]
Further, when the high voltage connection terminal Va for connecting the image forming member 12 to a high voltage power source and the ground connection terminal described above are formed through a through hole provided in the rear plate 1, the image forming apparatus of the present invention is applied. When designing a TV receiver or the like, a connection to a high voltage power source or a ground can be formed on the back surface of the image forming apparatus, which is preferable in design. However, in this case, since a high voltage is applied between the insulating coating of the high-voltage connection terminal and the rear plate, there is a possibility that electric discharge may occur on the surface of the insulating layer. A low resistance conductor is also arranged around the through hole of the high voltage connection terminal, and this is connected to the low resistance conductor arranged around the electron source. Alternatively, an integrally formed design can be applied.
[0032]
DETAILED DESCRIPTION OF THE INVENTION
An embodiment of the present invention will be specifically described with reference to the drawings. FIG. 1 is a plan view schematically showing an example of the configuration of the image forming apparatus of the present embodiment, and shows the configuration when viewed from above with the face plate removed.
[0033]
In FIG. 1, reference numeral 1 denotes a rear plate that also serves as a substrate for forming an electron source. ₂ Various materials are used depending on conditions, such as blue plate glass on which a film is formed, glass with reduced Na content, quartz glass, or ceramics. Note that a substrate for forming an electron source may be provided separately from the rear plate, and the electron source may be formed and then bonded together. Reference numeral 2 denotes an electron source region in which a plurality of electron-emitting devices such as a field emission device and a surface conduction electron-emitting device are arranged, and a wiring connected to the device is formed so as to be driven according to the purpose.
[0034]
Reference numerals 3-1, 3-2 and 3-3 are wirings for driving the electron source, which are taken out of the image forming apparatus and connected to a driving circuit (not shown) of the electron source 2. A support frame 4 is sandwiched between the rear plate 1 and a face plate (not shown), and is joined to the rear plate 1 by frit glass. The electron source driving wirings 3-1, 3-2, and 3-3 are embedded in the frit glass at the joint between the support frame 4 and the rear plate 1 and are drawn out to the outside. Reference numeral 5 denotes a low-resistance conductor which is a characteristic part of the present invention, and is formed so as to surround the electron source 2. An insulating layer (not shown) is formed between the electron source driving wirings 3-1, 3-2 and 3-3. In addition, contact portions 6 having a wide width are formed at the four corners of the low resistance conductor 5 so as to be suitable for contacting the terminals of the ground connection line. Reference numeral 7 denotes a passage hole for passing a high voltage introduction terminal for supplying a high voltage to the image forming member 12 of the face plate. In addition, a getter 8, a getter shielding plate 9, and the like are arranged in the vacuum container as necessary.
[0035]
2 (A), 2 (B), and 2 (C) are schematic views showing a cross-sectional configuration along the lines AA, BB, and CC in FIG. In FIG. 2A, 11 is a face plate, 12 is an image forming member made of a metal film (for example, Al) called a fluorescent film and a metal back, 13 is an insulating layer formed as necessary, and 14 is an inner wall of the vacuum vessel. It is the antistatic film | membrane formed in this. This antistatic film 14 is naturally formed on the glass of the inner wall of the vacuum vessel, but may also be formed on the image forming member 12 or the electron source 2. The electron source 2 is also effective in preventing charge-up. The sheet resistance value of the antistatic film is 10 as described above. ⁸ -10 ¹⁰ If it is in the range of Ω / □, the leakage current between the electrodes and wirings of the electron-emitting devices constituting the electron source 2 will not be a problem.
[0036]
The material of the antistatic film 14 is not particularly limited as long as a predetermined sheet resistance value is obtained and it has sufficient stability. For example, a film in which graphite fine particles are dispersed at an appropriate density can be applied. Since this film is sufficiently thin, even if it is formed on the metal back of the image forming member 12, it does not substantially have an adverse effect that reduces the number of electrons that reach the phosphor and contribute to light emission. Compared to the metal back material, the elastic scattering of electrons is less likely to occur, so the effect of reducing the scattering of electrons causing charge-up can also be expected. For example, when a discharge occurs along the inner wall of the vacuum vessel, the discharge current is connected to the inner wall surface of the vacuum vessel from the image forming member 12 to which a high voltage is applied, and flows into the low resistance conductor 5, most of which is low. Since it flows to the ground through the impedance ground connection line, it can be prevented from flowing into the electron source 2 through the wiring 3-1, or flowing to the ground through a member such as a glass container constituting the vacuum container.
[0037]
In FIG. 2B, the ground connection terminal 15 is connected to the contact portion 6 of the low resistance conductor 5. The ground connection terminal is composed of, for example, a conductor 16 and an insulator 17, and the conductor 16 is a rod having a sufficient cross-sectional area made of a metal such as Ag or Cu (for example, an Ag rod having a diameter of 2 mm, in which case the electric resistance of the rod is It is about 5 mΩ per cm, which is a very small value, or the same low resistance value can be obtained by using a material having good conductivity such as Cu or Al.) The surface of the Au coating layer reduces the contact resistance. It is desirable to have Note that it is more desirable that the contact portion 6 of the low-resistance conductor 5 is also covered with Au or made of Au, because the contact resistance can be very small.
[0038]
By connecting the connection connected to the ground connection terminal 15 to the ground, the resistance from each part of the low resistance conductor 5 to the ground can be set to an extremely small value of, for example, 1Ω or less.
[0039]
On the other hand, the self-induction coefficient of the ground connection line is 10 by reducing the distance between the ground connection terminal 15 and the ground. ^-6 H or less can be set. Therefore, for a frequency component of 10 MHz, the impedance can be about 10Ω or less. For a frequency component of 1 GHz, the impedance is at most about 1 kΩ.
[0040]
By the way, when it is assumed that the ground connection line does not exist, the main current flow path connecting the low resistance conductor 5 and the ground is from the low resistance conductor 5 to the surface of the rear plate 1 (if there is an antistatic film, the antistatic After flowing into the electron source 2 through the film), the electron source driving wiring 3 passes through and reaches the ground. That is, in FIG. 11A, the current i ₃ , I ₄ It is a flow path through which. It is considered that the impedance of the flow path is usually governed by the resistance of the flow path of the current flowing on the rear plate surface or the antistatic film. Assuming a case where the circumference of the electron source is 100 cm and the distance between the electron source and the low-resistance conductor is 1 cm, the sheet resistance of the antistatic film is 10 ⁸ When Ω / □ is assumed, even if it is assumed that the current flows uniformly through the antistatic film, the resistance value is 1 MΩ. This value is sufficiently large even when compared with the impedance of the above-described ground connection line.
[0041]
In the absence of the antistatic film 14, the resistance value of this portion is further increased.
[0042]
Further, if the distance between the electron source 2 and the low resistance conductor 5 is reduced to about 1 mm, the resistance value of this portion is 1/10 of the above value. Further, even if the resistance value decreases by another digit due to some factor, the resistance value between the low resistance conductor 5 and the electron source 2 is 10 kΩ. This value is an extreme case, and the resistance is actually larger than this value. Further, the resistance value of this portion becomes a dominant portion of the impedance of the current flow path between the low resistance conductor 5 and the ground when the ground connection line is not present. That is, the impedance Z ′ of the current flow path is substantially equal to its resistance value (hereinafter R ′), and the resistance value between the low-resistance conductor and the electron source is the main part.
[0043]
When a discharge current flows into the low-resistance conductor 5, the current flows from the low-resistance conductor 5 to the ground via the low impedance line and then flows into the electron source 2 through the antistatic film 14, and the electron-emitting device The ratio of the magnitude of the current flowing through the wiring and the like to the ground is equal to the ratio of the reciprocal of the impedance Z and Z ′ (≈R ′). If R ′ is 10 times Z, the current flowing to the ground through the electron source when discharge occurs will be about an order of magnitude smaller than when there is no low impedance line.
[0044]
Among the low impedance impedances, the self-inductive component is about 10Ω at 10 MHz as described above, and about 1 kΩ at 1 GHz. Therefore, if the resistance component (hereinafter R) is smaller than 1 kΩ, the impedance Z is 1 kΩ in the frequency region below 1 GHz. It becomes about or less, and becomes 1/10 or less of Z ′ (≈R ′). Furthermore, if R is smaller than 100Ω, Z is 100Ω or less in a frequency region of 100 MHz or less.
[0045]
The extent to which the current flowing into the electron source 2 during discharge can be reduced to avoid damage to the electron-emitting device, the vacuum vessel, and the driving circuit depends on the conditions of the individual image forming apparatuses, and can be generally described. Although there seems to be statistical variation in the magnitude of the current that flows due to the discharge, if the amount of current flowing into the electron source decreases by one or two digits, it is quite likely that the electron source will be damaged. Can be expected to decrease.
[0046]
In the above description, the case of 10 kΩ in which R ′ is considered to be the smallest is described. However, when R ′ is larger than this, it is natural that R is 1/10 or less or 1/100 or less. The same effect as above or more can be expected.
[0047]
As a material of the low resistance conductor 5, conductive carbon may be used by carbon paste or the like. If the thickness of the conductor is sufficiently increased, it is easy to set the resistance value of the low-resistance conductor 5 and the ground connection line to about 100Ω, and a sufficiently small impedance can be realized as compared with other current flow paths. .
[0048]
In addition, the ground connection terminal 15 may use the method of taking out to the back side of the rear plate 1 other than the method like the above-mentioned example.
[0049]
In FIG. 2C, reference numeral 18 denotes a high voltage introduction terminal for supplying a high voltage (anode voltage Va) to the image forming member 12. The configuration in which the introduction terminal 18 includes the conductor 16 and the insulator 17 is the same as that of the ground connection terminal. In the case of such a configuration, since there is a possibility that discharge occurs along the side surface of the insulator 17, the periphery of the passage hole 7 is surrounded by the low resistance conductor 5 as shown in FIG. It is preferable to prevent it from flowing into the source 2 or the vacuum vessel.
[0050]
Moreover, the structure which takes out a high voltage wiring to the faceplate side may be sufficient. In that case, the voltage applied to the insulator does not increase so much and discharge is less likely to occur, which is a more preferable configuration from the viewpoint of preventing discharge.
[0051]
The antistatic film 14 is preferably formed not only on the inner wall surfaces of the face plate and the support frame rear plate, but also on the getter 8 and the getter shielding plate 9.
[0052]
The type of the electron-emitting device constituting the electron source 2 used in the present embodiment is not particularly limited as long as properties such as electron emission characteristics and device size are suitable for the intended image forming apparatus. . Thermionic emission devices, or cold cathode devices such as field emission devices, semiconductor electron emission devices, MIM type electron emission devices, and surface conduction type electron emission devices can be used.
[0053]
The surface conduction electron-emitting devices shown in the examples described later are preferably used in this embodiment, but are the same as those described in the above-mentioned application by the present applicant, Japanese Patent Laid-Open No. 7-235255. However, it will be briefly described below. 8A and 8B are schematic views showing an example of the structure of a single surface conduction electron-emitting device, where FIG. 8A is a plan view and FIG. 8B is a cross-sectional view.
[0054]
In FIG. 8, 41 is a base for forming an electron-emitting device, 42 and 43 are a pair of device electrodes, 44 is a conductive film connected to the device electrode, and an electron-emitting portion 45 is formed in a part thereof. ing. The electron emission portion 45 is a high-resistance portion formed by partially destroying, deforming, or altering the conductive film 44 by a forming process described later, and a portion of the conductive film 44 is cracked, and its vicinity. From which electrons are emitted.
[0055]
The forming process is performed by applying a voltage between the pair of element electrodes 42 and 43. The voltage to be applied is preferably a pulse voltage, a method of applying a pulse voltage having the same peak value shown in FIG. 5A, and a method of applying a pulse voltage while gradually increasing the peak value shown in FIG. Any of these methods may be used. The pulse waveform is not limited to the illustrated triangular wave, and may be another shape such as a rectangular wave.
[0056]
After forming the electron emission portion by the forming process, a process called “activation process” is performed. This is a method in which a substance mainly composed of carbon or a carbon compound is deposited on and / or around the electron emission portion by repeatedly applying a pulse voltage to the element in an atmosphere containing an organic substance. As a result of this process, both the current flowing between the device electrodes (device current If) and the current accompanying emission of electrons (emitted current Ie) increase.
[0057]
The electron-emitting device obtained through the forming process and the activation process is preferably followed by a stabilization process. This stabilization step is a step of exhausting the organic substance in the vicinity of the electron emission portion in the vacuum vessel. As the vacuum exhaust device for exhausting the vacuum vessel, it is preferable to use a device that does not use oil so that the oil generated from the device does not affect the characteristics of the element. Specifically, an evacuation apparatus including a sorption pump and an ion pump can be used.
[0058]
The partial pressure of the organic substance in the vacuum vessel is 1.3 × 10 6 at a partial pressure at which the above carbon or carbon compound is hardly newly deposited. ^-6 Pa (Pascal) or less is preferable, and further 1.3 × 10 ^-8 Pa or less is particularly preferable. Furthermore, when evacuating the inside of the vacuum vessel, it is preferable to heat the entire vacuum vessel so that the organic substance molecules adsorbed on the inner wall of the vacuum vessel and the electron-emitting device can be easily evacuated. The heating conditions at this time are 80 to 250 ° C., preferably 150 ° C. or higher, and it is desirable that the treatment be performed for as long as possible. The conditions are appropriately selected according to various conditions. The pressure in the vacuum vessel needs to be as low as possible, 1 × 10 ^-5 Pa or less is preferable, and further 1.3 × 10 ^-6 Pa or less is particularly preferable.
[0059]
The driving atmosphere after the stabilization process is preferably maintained at the end of the stabilization process, but is not limited to this. If the organic material is sufficiently removed, the degree of vacuum Even if it is somewhat lowered, it can maintain sufficiently stable characteristics.
[0060]
By adopting such a vacuum atmosphere, deposition of new carbon or carbon compounds can be suppressed, and H adsorbed on a vacuum container or a substrate can be suppressed. ₂ O, O ₂ And the like, and as a result, the device current If and the emission current Ie are stabilized.
[0061]
The relationship between the voltage Vf applied to the device, the device current If, and the emission current Ie of the surface conduction electron-emitting device thus obtained is as schematically shown in FIG. In FIG. 9, since the emission current Ie is significantly smaller than the device current If, it is shown in arbitrary units. The vertical and horizontal axes are linear scales.
[0062]
As shown in FIG. 9, in the surface conduction electron-emitting device, when a device voltage Vf equal to or higher than a certain voltage (called a threshold voltage, Vth in FIG. 9) is applied, the emission current Ie increases rapidly. The emission current Ie is hardly detected below the threshold voltage Vth. That is, it is a non-linear element having a clear threshold voltage Vth for the emission current Ie. If this is utilized, matrix wiring is applied to the two-dimensionally arranged electron-emitting devices, electrons are selectively emitted from a desired device by simple matrix driving, and this is irradiated onto an image forming member to form an image. It is possible.
[0063]
An example of the configuration of the phosphor film that is an image forming member will be described. FIG. 10 is a schematic view showing a fluorescent film. In the case of monochrome, the fluorescent film 51 can be composed of only a phosphor. In the case of a color fluorescent film, it can be constituted by a black conductive material 52 called a black stripe or a black matrix and a fluorescent material 53 of RGB three colors or the like depending on the arrangement of the fluorescent materials. The purpose of providing the black stripe and the black matrix is to make the mixed colors and the like inconspicuous by making the color-separated portion between the phosphors 53 of the three primary color phosphors necessary for color display, The purpose is to suppress a decrease in contrast due to light reflection. As a material for the black stripe, in addition to a commonly used material mainly composed of graphite, a material having electrical conductivity and little light transmission and reflection can be used.
[0064]
As a method of applying the phosphor to the face plate 11, a precipitation method, a printing method, or the like can be adopted regardless of monochrome or color. A metal back (not shown) is provided on the inner surface side of the fluorescent film 51. The purpose of providing the metal back is to improve the brightness by specularly reflecting the light emitted from the phosphor 53 toward the inner surface to the face plate 11 side, and to act as an electrode for applying an electron beam acceleration voltage. For example, the phosphor 53 is protected from damage caused by the collision of negative ions generated in the envelope. The metal back can be produced by performing a smoothing process (usually called “filming”) on the inner surface of the phosphor film after the phosphor film is produced, and then depositing Al using vacuum evaporation or the like.
[0065]
In order to further increase the conductivity of the fluorescent film 51, a transparent electrode may be provided on the face plate 11 on the outer surface side of the fluorescent film 51.
[0066]
In the case of color display, it is necessary to associate each color phosphor with the electron-emitting device, and sufficient alignment is indispensable.
[0067]
According to the present embodiment having the above-described configuration, it is possible to improve the reliability of a thin flat plate type electron beam image forming apparatus. By using the image forming apparatus formed in this way, a scanning signal and an image signal are applied to the electron-emitting devices formed on the matrix wiring coordinates, and a high voltage is applied to the metal back of the image forming member, so that a large size is obtained. An image display device that displays a thin image can be provided.
[0068]
【Example】
Hereinafter, the present invention will be further described based on each embodiment with reference to the drawings.
[0069]
[Example 1]
A plurality of surface-conduction electron-emitting devices are formed on a rear plate that also serves as a substrate, and an electron source is formed by wiring in a matrix, and an image forming apparatus is created using the electron source. The creation procedure will be described below with reference to FIGS. 3A to 3E and FIG.
[0070]
(Process-a)
On the surface of the cleaned soda glass, 0.5 μm of SiO ₂ The layer was formed by sputtering, and the rear plate 1 was obtained. Subsequently, a circular passage hole (7 in FIG. 1) having a diameter of 4 mm for introducing a high-pressure introduction terminal was formed by an ultrasonic machine.
[0071]
Element electrodes 21 and 22 of surface conduction electron-emitting devices are formed on the rear plate by sputtering film formation and photolithography. The material is a laminate of 5 nm Ti and 100 nm Ni. The element electrode spacing was 2 μm (FIG. 3A).
[0072]
(Process-b)
Subsequently, the Y-direction wiring 23 was formed by printing the Ag paste in a predetermined shape and baking it. The wiring is extended to the outside of the electron source formation region and becomes the electron source driving wiring 3-2 in FIG. The wiring 23 has a width of 100 μm and a thickness of about 10 μm (FIG. 3B).
[0073]
(Process-c)
Next, the insulating layer 24 is similarly formed by a printing method using a paste containing PbO as a main component and a glass binder. This is to insulate the Y-direction wiring 23 from the X-direction wiring described later, and was formed to have a thickness of about 20 μm. Note that a notch is provided in the part of the element electrode 22 so as to connect the X-direction wiring and the element electrode (FIG. 3C).
[0074]
(Process-d)
Subsequently, the X-direction wiring 25 is formed on the insulating layer 24 (FIG. 3D). The method is the same as that of the Y-direction wiring 23, and the width of the X-direction wiring 25 is 300 μm and the thickness is about 10 μm. Subsequently, a conductive film 26 made of PbO fine particles is formed.
[0075]
The conductive film 26 is formed by forming a Cr film on the substrate 1 on which the wirings 23 and 25 are formed by sputtering, and forming an opening corresponding to the shape of the conductive film 26 in the Cr film by photolithography. Form.
[0076]
Subsequently, a solution of an organic Pd compound (ccp-4230: manufactured by Okuno Pharmaceutical Co., Ltd.) was applied and baked in the atmosphere at 300 ° C. for 12 minutes to form a PdO fine particle film. The conductive film 26 having a predetermined shape is formed by lift-off after being removed by wet etching (FIG. 3E).
[0077]
(Process-e)
Further, a paste containing PbO as a main component and a glass binder is applied onto the rear plate. The application area is other than the area where the element electrodes 21, 22, X direction 25, Y direction wiring 23, and conductive film 26 are formed (electron source area 2 in FIG. 1), and the support in FIG. This is an area corresponding to the inside of the frame 4.
[0078]
(Process-f)
Next, as shown in FIG. 4, an Au paste is printed on quartz glass 27 having a thickness of 0.5 mm which is slightly wider than the low-resistance conductor to be formed and formed into substantially the same shape, and baked to reduce the low resistance of Au. A conductor 5 is formed. The low resistance conductor 5 has a width of 2 mm and a thickness of about 100 μm. However, the four corners serving as the contact portions 6 of the ground connection terminal are quarter circles having a radius of 5 mm, the portion corresponding to the high-pressure introduction terminal passage hole 7 is a circle having a diameter of 8 mm, and a passage hole having a diameter of 4 mm is formed at the center. Is. This is placed on the rear plate so that the passage hole 7 is aligned, and the glass paste is heat-treated to form an insulating layer, and at the same time, the quartz glass 27 carrying the low-resistance conductor 5 is fixed at a predetermined position.
[0079]
Here, the quartz glass 27 is used in order to obtain a sufficient withstand voltage between the low resistance conductor 5 and the electron source driving wirings 3-1, 3-2 and 3-3. When a sufficient withstand voltage is obtained, the low resistance conductor 5 may be formed thereon after forming the insulating layer with glass paste.
[0080]
(Process-g)
As shown in FIGS. 1 and 2, the support frame 4 that forms a gap between the rear plate 1 and the face plate 11 and the rear plate are connected using frit glass. Fixing of the getter 8 is simultaneously performed using frit glass. The antistatic film 14 is formed by spray-coating and drying the carbon fine particle dispersion on the inner surface of the container. The formation condition is that the sheet resistance value of the antistatic film 14 is 10 ⁸ The conditions are determined in advance so as to be about Ω / □.
[0081]
(Process-h)
Next, create a faceplate. Like the rear plate, SiO ₂ Blue plate glass provided with a layer is used as a substrate. An opening for connecting the exhaust pipe and a ground connection terminal introduction port are formed by ultrasonic processing. Subsequently, the wiring for connecting the high voltage introduction terminal abutting portion and the metal back described later by Au is formed by printing with Au, the black stripe of the fluorescent film, and then the stripe-shaped phosphor are formed, and the filming process is performed. Thereafter, an Al film having a thickness of about 20 μm was deposited thereon by a vacuum evaporation method to form a metal back. Further, an antistatic film 14 is formed by spraying a carbon fine particle dispersion on the surface of the face plate that is to be inside the container. Of the film thus formed, the portion formed on the metal back has an effect of controlling the reflection of the incident electron beam. As a result, there are favorable effects such as preventing the reflected electrons from colliding with the inner wall of the vacuum vessel and causing charge-up.
[0082]
(Process-i)
The support frame 4 joined to the rear plate is joined using the face plate and frit glass. The ground connection terminal, high voltage introduction terminal, and exhaust pipe are also joined at the same time. The ground connection terminal and the high voltage introduction terminal are made by inserting an Ag rod coated with Au into an insulator mainly composed of alumina.
[0083]
Careful alignment is performed so that each electron-emitting device of the electron source and the position of the fluorescent film of the face plate accurately correspond to each other.
[0084]
(Process-j)
The image forming apparatus is connected to a vacuum exhaust apparatus via an exhaust pipe (not shown), and the inside of the container is exhausted. The pressure in the container is 10 ^-4 When it becomes Pa or less, a forming process is performed.
[0085]
The forming process was performed by applying a pulse voltage with a gradually increasing peak value as schematically shown in FIG. 5B to the X direction wiring for each row in the X direction. Pulse interval T ₁ Is 10 sec. , Pulse width T ₂ Is 1 msec. It was. Although not shown in the figure, a rectangular wave pulse having a peak value of 0.1 V is inserted between the forming pulses, the current value is measured, and the resistance value of the electron-emitting device is measured simultaneously. When the resistance value per element exceeds 1 MΩ, the forming process for the row is terminated, and the process for the next row is started. This is repeated to complete the forming process for all rows.
[0086]
(Process-k)
Next, an activation process is performed. Prior to this treatment, the image forming apparatus is evacuated by an ion pump while maintaining the temperature at 200 ° C. ^-5 Lower to Pa or less. Subsequently, acetone is introduced into the vacuum vessel. Pressure is 1.3 × 10 ^-2 The introduction amount was adjusted to be Pa. Subsequently, a pulse voltage is applied to the X direction wiring. The pulse waveform is a rectangular wave pulse with a peak value of 16 V, and the pulse width is 100 μsec. Then, the X-direction wiring to which pulses are applied at intervals of 125 μsec per pulse is switched to the adjacent row, and the pulse is sequentially applied to each wiring in the row direction. As a result, each line has 10 msec. Pulses are applied at intervals. As a result of this processing, a deposited film containing carbon as a main component is formed in the vicinity of the electron emitting portion of each electron emitting device, and the device current If increases.
[0087]
(Process-l)
Subsequently, as a stabilization process, the inside of the vacuum vessel is evacuated again. The evacuation was continued for 10 hours using an ion pump while maintaining the image forming apparatus at 200 ° C. This step is for removing organic substance molecules remaining in the vacuum vessel, preventing further deposition of the deposited film containing carbon as a main component, and stabilizing the electron emission characteristics.
[0088]
(Process-m)
After returning the image forming apparatus to room temperature, a pulse voltage is applied to the X-direction wiring in the same manner as in step-k. Further, when a voltage of 5 kV is applied to the image forming member through the high voltage introduction terminal, the phosphor film emits light. At this time, the ground connection terminal is connected to the ground. By visual inspection, it is confirmed that there is no portion that does not emit light or a very dark portion, voltage application to the X direction wiring and the image forming member is stopped, and the exhaust pipe is heated and welded and sealed. Subsequently, getter processing is performed by high frequency heating to complete the image forming apparatus.
[0089]
As for another image forming apparatus formed in the same manner as described above, when a part of the face plate was cut out and the impedance between the low resistance conductor and the ground was measured, it was about 10Ω. Next, when the connection between the ground connection terminal and the ground was disconnected and measured, it was about 1 MΩ. This value is a resistance value between the low-resistance conductor and the ground not via the ground connection line.
[0090]
In the image forming apparatus of Example 1, a voltage was applied to the electron source and the image forming member in the same manner as in the above (Step-m) to cause the image forming member to emit light. At this time, the voltage applied to the image forming member was 6 kV.
[0091]
Although not shown in FIG. 6A, during the measurement, the periphery of the face plate of the image forming apparatus was fixed by pressing with a conductive rubber connected to the ground. As a result, almost no electric field current flows between the face plate and the support frame and between the support frame and the rear plate, and the frit glass at the joint can be avoided from deteriorating as described above.
[0092]
In the measurement, as schematically shown in FIG. 6A, an ammeter 32 was placed between the high-voltage power supply 31 and the high-voltage introduction terminal 18, and the current value was detected to detect the occurrence of discharge. Here, 2 is an electron source, 12 is an image forming member, 33 is a recorder, 34 is an electron source driving circuit, and 35 is an image forming apparatus. The current that flows through the ammeter 32 is usually small, and most of this seems to be the current that flows through the antistatic film 14 on the inner surface of the vacuum container of the image forming apparatus 35, which is schematically shown in FIG. As shown, a peak as shown by an arrow occasionally appears. This indicates that a discharge has occurred in the vacuum vessel. By recording the current value in this manner, the number of occurrences of discharge can be known.
[0093]
When the above image forming apparatus was observed for 10 hours, six discharges were confirmed in the image forming apparatus of Example 1, but no remarkable defect such as a line shape was confirmed on the screen.
[0094]
[Example 2]
An image forming apparatus similar to that of Example 1 was produced except that the low resistance conductor 5 was formed using graphite paste. When the same evaluation as described above was performed, the same result as in Example 1 was obtained. In Example 1, the low-resistance conductor 5 is formed by firing Au, but the electrical resistance to the ground is about 100Ω, and it can be seen that there is no difference in the effect.
[0095]
[Example 3]
In the first embodiment, the ground connection terminal is introduced into the vacuum chamber from the face plate side and the high voltage introduction terminal from the rear plate side. However, the ground connection terminal is introduced from the rear plate side and the high voltage introduction terminal is connected to the face. It may be introduced from the plate side. FIGS. 7A and 7B schematically show the structure when the ground connection terminal is introduced from the rear plate side and the high voltage introduction terminal is introduced from the face plate side. Even in such a configuration, as a result of observation, the same effect as in the first embodiment can be obtained. In this case, the side surface of the insulator 17 of the high-voltage terminal is not subjected to a high voltage that causes discharge, and therefore a corresponding low-resistance conductor is not required.
[0096]
[ Reference example ]
Book Reference example These were prepared in the same manner as in Example 1 except that the formation of the antistatic film in Step-h was omitted. When a voltage was applied to the image forming member in the same manner as in Example 1 and the effect of the present invention was measured, 15 discharges were observed, but no damage to the electron-emitting device due to this was confirmed.
[0097]
[Example 5]
FIG. 13A is a plan view schematically showing the configuration of the image forming apparatus of this embodiment, and shows the configuration when viewed from above with the face plate removed. Figure 13 (B) is a figure 13 It is the figure which showed typically the cross section along DD in (A). Figure 13 (A), figure 13 In (B), reference numeral 19 denotes a ground line connection terminal made of a conductive film, which is formed by the same method as the electron source driving wires 3-1 and 3-2 and the low resistance conductor 5. By using a conductive film having a wide b as described above, the electrical resistance in this portion can be sufficiently lowered. Other members are the same as those in the first embodiment, and the same effects as those in the first embodiment can be obtained. However, the X-direction wiring is a structure that is drawn out of the vacuum vessel only from one direction, and does not have a structure in which the wiring indicated by the reference symbol 3-3 in FIG. 1A and the ground line connection terminal 19 are stacked. Showed the case.
[0098]
When such a structure is adopted, there is a problem that a space is required to attach the wiring connecting to the ground to the ground connection terminal 19 at the end of the rear plate, but a through hole is provided in the face plate or the rear plate. Thus, the structure is simpler than the method of attaching the ground connection terminal, and the manufacture is easy.
[0099]
[ Reference example ]
Book Reference example 14 has a configuration in which a low resistance conductor is formed only on one side of the electron source, as schematically shown in FIG. The high voltage introduction terminal was formed by providing a through hole in the face plate as in Example 3. Others are the same as in the first embodiment. Book Reference example Then, in driving the electron source, the X-direction wiring is negative, the Y-direction wiring is positive, and the electron-emitting device and the wiring are connected as shown in FIG. The electrons emitted from the light have momentum components from right to left in FIG. For this reason, the electrons scattered by the image display member are likely to collide with the side surface of the left vacuum vessel, and it is considered that discharge is likely to occur in this portion. Therefore, even if a low-resistance conductor is disposed only on the left side of the electron source as shown in FIG. 14, the effect of sufficiently suppressing damage to the electron source due to conduction can be obtained.
[0100]
As an electron-emitting device, this Reference example Not only this device, but also when using a lateral field emission type electron-emitting device. Reference example The same configuration as is effective. In addition, when a portion where discharge is likely to occur is limited for some reason, an effect can be expected by arranging a low resistance conductor at a position corresponding to the portion.
[0101]
[Example 7]
In this embodiment, the high voltage introduction terminal 18 and the ground connection terminal 15 are both provided so as to penetrate the rear plate. FIG. 12 is a plan view illustrating the configuration of this embodiment with the face plate removed. The configuration of the cross section along the lines AA and CC in the figure is the same as that shown in FIGS. 2 (A) and 2 (C). The cross-sectional configuration along the line BB is the same as that shown in FIG. 7A, and the conductor rod 16 of the ground connection terminal 15 is connected to the low resistance conductor 5. With this configuration, both the ground connection terminal where a large current may flow and the high voltage terminal where a high voltage needs to be applied are taken out to the back side of the image forming apparatus, and the user touches these terminals. This is convenient in taking safety measures. In addition, since there are no protrusions on the display surface as an image display device, there is no sense of incongruity to the observer, there is no shielding to the viewing angle, and a drive circuit etc. can be mounted on the back side of the rear plate, so that the thickness can be reduced The degree of freedom of design can be increased by making contributions. The positions where the high voltage introduction terminal and the ground connection terminal are provided are not limited to those of this embodiment, and can be appropriately designed according to the structure of the image forming apparatus to be applied.
[0102]
In the above embodiment, a case where a surface conduction electron-emitting device is used as the electron-emitting device constituting the electron source has been shown. However, the configuration of the present invention is naturally not limited to this, and field emission is also possible. The present invention can be similarly applied even when an electron source using a type electron emitting device, a semiconductor electron emitting device, or other various electron emitting devices is used.
[0103]
In the embodiment, the rear plate of the image forming apparatus also serves as the substrate of the electron source. However, the substrate may be fixed to the rear plate after the rear plate and the substrate are separated and the electron source is formed.
[0104]
In addition, within the scope of the technical idea of the present invention, the various members shown in the above embodiment and examples may be appropriately changed. Further, the row wirings 3-1 and 3-2 shown in FIG. 1 may be taken out from one direction.
[0105]
【The invention's effect】
In the image forming apparatus of the present invention described above, even if a discharge occurs in the container of the apparatus, the possibility of deterioration or damage of the electron source or the electron source driving circuit is extremely low, and thus a highly reliable image. Forming device.
[0106]
In addition, it is possible to prevent the occurrence of cracks or the like due to the discharge in the members constituting the container of the apparatus.
[0107]
Further, according to the present invention, it is possible to realize a thin image forming apparatus using an electron source.
[Brief description of the drawings]
FIG. 1 is a plan view schematically showing a configuration of an example of an image forming apparatus of the present invention, and shows a configuration of a rear plate and a support frame.
2A to 2C are cross-sectional views schematically showing the configuration of the example of the present invention shown in FIG. 1, and are respectively AA, BB, and CC in FIG. The configuration along is shown.
FIGS. 3A to 3E are diagrams showing a part of the manufacturing process of the image forming apparatus of the present invention. FIGS.
FIG. 4 is a diagram showing a schematic shape of a quartz plate used in the image forming apparatus of the present invention and a shield conductor formed thereon.
FIGS. 5A and 5B are diagrams showing pulse voltage waveforms used in forming an electron emission portion of the surface conduction electron-emitting device used in the present invention. FIGS.
FIG. 6A is a diagram showing a schematic configuration of an apparatus used for verifying the effect of the image forming apparatus of the present invention.
(B) is the figure which showed the result measured with the said apparatus typically.
7A and 7B are schematic views showing another example of the configuration of the present invention.
FIGS. 8A and 8B are a plan view and a cross-sectional view schematically showing a basic configuration of a surface conduction electron-emitting device used in the present invention.
FIG. 9 is a schematic diagram showing typical electrical characteristics of the surface conduction electron-emitting device.
FIG. 10 is a diagram illustrating a typical example of the configuration of the image forming member of the image forming apparatus of the present invention.
FIG. 11A is an equivalent circuit diagram for explaining the effect of the present invention.
(B) is a schematic diagram for explaining the correspondence of the above equivalent circuit diagram with an actual device.
FIG. 12 is a schematic plan view showing still another example of the image forming apparatus of the present invention.
FIG. 13 is a schematic diagram showing still another example of the configuration of the present invention. A is a plan view and B is a cross-sectional view.
FIG. 14 is a schematic diagram showing still another example of the configuration of the present invention.
[Explanation of symbols]
1 Rear plate that doubles as electron source substrate
2 electron source region
3 Electron source drive wiring
4 Support frame
5 Shield conductor
6 Ground terminal contact area
7 High voltage lead-in terminal passage hole
8 Getter
9 Getter shielding plate
11 Front panel
12 Image forming members
13 Insulating layer
14 Antistatic film
15 Ground terminal
16 Conductor bar
17 Insulator
18 High voltage introduction terminal
21, 22 Device electrode
23 Y-direction wiring
24 Insulating layer
25 X direction wiring
26 Conductive film
27 Quartz plate
31 High voltage power supply
32 Ammeter
33 Recorder
34 Electron source drive circuit
35 Image forming apparatus
41 Base
42,43 Device electrode
44 Conductive film
45 Electron emission part
51 Fluorescent membrane
52 Black conductive material
53 phosphor
61 Points indicating image display members
62 Points corresponding to shield conductors
63,64 Points for device electrodes
65 Electron emitter
66 Capacity between imaging member and electron source
71 Image forming member
72 Joint of vacuum vessel member
73 Electron source drive wiring
74 Electrodes for capturing electrolysis current
75 Resistance of antistatic film
76 Resistance of frit glass
77 Glass resistance between 71 and 72
78 Glass resistance between 71 and 74
79 Power supply terminal for electron source drive
80 Resistance of electron source drive wiring
81 Resistance such as antistatic film
82 A member having a predetermined potential.

Claims (20)

A container, an image forming apparatus comprising an electron source and an image forming member disposed opposite to each other in the inner part of the vessel, and a drive circuit for driving the electron source,
And the conductive member on the inner wall surface of the container between the image forming member and the electron source,
An antistatic film electrically connected to the conductive member;
With
The present conductive member between the ground, having a first current carrying current flows without passing through any of said electron source and said drive circuit, the resistance of the first current flow path, the present conductive member between the ground, rather low than the resistance of the second current flow path through which current is through the electron source or the drive circuit,
The image forming apparatus, wherein the conductive member is disposed on a substrate on which the electron source is disposed so as to surround the entire periphery of the electron source . The image forming apparatus according to claim 1, wherein the antistatic film has a sheet resistance value of 10 ⁸ Ω / □ to 10 ¹⁰ Ω / □. The image forming apparatus according to claim 1, wherein a resistance of the first current flow path is 1/10 or less of a resistance of the second current flow path. The image forming apparatus according to claim 1 , wherein the first current flow path has a conductor terminal in contact with the conductive member. The conductor terminals, the image forming apparatus according to claim 4 having the exit site of the image forming member is a placed substrate is taken out of the container. The conductor terminals, the image forming apparatus according to claim 4 having the exit site where the electron source is the placed substrate is taken out of the container. The image forming apparatus according to claim 5 , wherein the extraction portion of the conductor terminal is covered with an insulator. Said image forming member has an accelerating electrode for accelerating the electrons from the electron source, the voltage applying terminal for applying a voltage to the pressurized-speed electrode, outside of the container from the substrate side where the electron source is arranged The image forming apparatus according to claim 1 , wherein the image forming apparatus is taken out to a part . The first current channel has abutted conductor terminal on the conductive member, the conductor pin according to the substrate side of said electron source is arranged is taken out of the container Item 9. The image forming apparatus according to Item 8 . Said image forming member has an accelerating electrode for accelerating the electrons from the electron source, the voltage applying terminal for applying a voltage to the pressurized-speed electrode, said image forming member of the container from the arranged substrate the image forming apparatus according to claim 1, which is taken out section. The exit site of the voltage application terminal for the accelerating electrode for applying a voltage image forming apparatus according to any one of claims 8 to 9 are covered with an insulator. Wherein the periphery of the take-out portion position of the voltage applying terminal for applying a voltage to the acceleration electrode, the image forming apparatus according to claim 11, wherein the conductive member through the insulator is disposed. The image forming apparatus according to claim 1, wherein the electron source includes a plurality of electron-emitting devices connected to wiring. The image forming apparatus according to claim 1, wherein the electron source includes a plurality of electron-emitting devices connected in a matrix by a plurality of row-direction wirings and a plurality of column-direction wirings. The image forming apparatus according to claim 13 , wherein the electron-emitting device is a cold cathode device. The image forming apparatus according to claim 15 , wherein the cold cathode device is a surface conduction electron-emitting device. The container includes a first substrate on which the electron source is disposed, a second substrate on which the image forming member is disposed, and a frame member connected to the first substrate and the second substrate. The image forming apparatus according to claim 1, wherein the antistatic film is disposed on the first substrate. The container includes a first substrate on which the electron source is disposed, a second substrate on which the image forming member is disposed, and a frame member connected to the first substrate and the second substrate. The image forming apparatus according to claim 1, wherein the antistatic film is disposed on the second substrate. The container includes a first substrate on which the electron source is disposed, a second substrate on which the image forming member is disposed, and a frame member connected to the first substrate and the second substrate. The image forming apparatus according to claim 1, wherein the antistatic film is disposed on the frame member. A container having an inner wall surface;
  An electron source and an image forming member disposed opposite to each other in the container;
  A drive circuit for the electron source;
  In an image forming apparatus comprising:
  A conductive member disposed on an inner wall surface of the container between the electron source and the image forming member and spaced apart from the electron source;
  A connection terminal having a first resistance value for connecting the conductive member to a reference potential;
  An antistatic material having a second resistance value disposed on the inner wall surface of the container and between the electron source and the conductive member and connected to the electron source and the conductive member. A membrane, and
  The first resistance value is smaller than the second resistance value,
  The container includes a first substrate on which the electron source is disposed, and a second substrate on which the image forming member is disposed, and the conductive member is disposed on the first substrate on the electronic substrate. An image forming apparatus, wherein the image forming apparatus is arranged so as to surround the entire periphery of the source.

Images