JP3583959B2 - Development processing equipment - Google Patents

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention performs a developing process by supplying a developing solution to a surface of a substrate to be processed such as a semiconductor wafer.Development processing equipmentIt is about.
[0002]
[Prior art]
In the manufacture of a semiconductor device, a photoresist is applied to a semiconductor wafer as a substrate to be processed, a circuit pattern is transferred to the photoresist by using photolithography technology, and the photoresist is developed to form a circuit.
[0003]
Here, in the developing step, the developing solution is continuously supplied from the nozzle onto the semiconductor wafer, and the developing solution is applied to the pattern forming surface for a predetermined time so that the latent image pattern of the coating resist film is formed. A so-called paddle system for development is generally employed.
[0004]
At present, the mainstream of the paddle system uses a so-called linear nozzle in which a large number of liquid ejection holes are arranged at predetermined intervals on a straight line. Development methods using such a linear nozzle include (1) a “rotation method” in which a liquid is filled on a wafer by rotating the wafer by 180 degrees while discharging a developing solution from the linear nozzle, and (2) The method is broadly divided into a "scan method" in which the liquid is filled by moving the linear nozzle in one direction in parallel with the wafer without rotating the wafer.
[0005]
The former rotation method has been devised in view of the recent demand for reducing the consumption amount of the developing solution and for uniformly filling the solution in a short time. However, with this rotation method, chips near the center of the wafer, which is the center of rotation, may become defective depending on the type of resist.
[0006]
That is, in the rotation method, the developer is filled over the entire wafer by rotating the wafer by 180 ° with the nozzle fixed, but in such a method, only the vicinity of the central portion of the wafer is always maintained. Since a fresh developing solution is supplied, it is conceivable that the development is excessively advanced only in this portion compared to the peripheral portion. With the recent miniaturization and high-density of circuit patterns, resists have been improved in performance and resolution, and problems that have been neglected in the past have been highlighted. For example, chemically amplified resists (KAR) When this is used, this phenomenon appears remarkably, and a desired resolution may not be obtained.
[0007]
On the other hand, according to the scanning method, although it takes a little time to fill the liquid as compared with the above-mentioned rotating method, the problem described above does not occur, and thus the method is considered to be promising in recent years.
[0008]
[Problems to be solved by the invention]
By the way, in the scan development method, the above-described linear nozzle is used, and the discharge hole of the linear nozzle is brought close to the surface of the wafer, and the developing solution is discharged simultaneously from many discharge holes. Then, the developer film is formed on the wafer by moving (scanning) the linear nozzle in parallel with the horizontal direction. Further, in this method, the lower surface of the linear nozzle is moved while being in contact with the developer supplied on the wafer, so that the liquid level of the developer is leveled.
[0009]
However, when the developer film is formed by such a method, the developer is sprayed from each discharge hole at a high pressure from a position close to the resist film, so that a portion corresponding to the discharge hole and a portion not facing the discharge hole are used. Therefore, the impact (impact) applied to the resist solution differs. For this reason, there is a possibility that unevenness occurs in the development amount and the resolution.
[0010]
Further, as described above, in the scan development method, the lower end surface of the linear nozzle provided with the ejection holes is brought into contact with the surface of the developing solution supplied onto the wafer so as to level the liquid surface. Therefore, it is necessary to clean the lower end surface of the linear nozzle at regular intervals. At this time, in the conventional configuration, since the discharge hole for the developer is provided at the portion to be cleaned, the cleaning liquid may enter the discharge hole of the linear nozzle in some cases. In this case, in order to prevent unevenness in the concentration of the supplied developer, there is a problem that good development cannot be performed until the cleaning liquid in the ejection holes is removed.
[0011]
The present invention has been made in view of such circumstances, and an object of the present invention is to provide a processing liquid in a scan development method, on a substrate to be processed uniformly and with a small impact at the time of supply, In addition, it is possible to effectively prevent the cleaning liquid from entering the discharge port for supplying the processing liquid of the developing liquid at the time of cleaning.Development processing equipmentIs to provide.
[0012]
[Means for Solving the Problems]
A development processing apparatus according to the present invention is a development processing apparatus that develops a photoresist film by supplying a developing solution to a processing target substrate having a photoresist film with a pattern exposed, wherein the processing target substrate is horizontally A substrate holding mechanism for holding the substrate; and a developer supply mechanism for holding a substrate held above the substrate to be processed and supplying a developer onto the substrate while moving in a predetermined horizontal direction. The developing solution supply mechanism is held in a state where the lower end thereof is opposed to the substrate with a predetermined gap therebetween, and one surface thereof is held so as to face the driving direction of the developing solution supply mechanism. A developing solution guide plate provided with a concave and convex portion, and supplying a developing solution to an upper portion of one surface of the developing solution guiding plate. Supply developer on the substrate to be processed That and having a developer supply system.
[0013]
According to such a configuration,Since the flow rate of the developing solution supplied onto the substrate to be processed is effectively reduced by the concave and convex portions of the developing solution guide plate, the impact on the resist film can be reduced.Thus, the developer can be uniformly supplied to the substrate to be processed, and the liquid can be stored in a state where the impact on the resist film during the supply is effectively suppressed. Therefore, good paddle development can be performed.
[0014]
Further, since the developer is supplied to the upper portion of the developer guide plate, it is possible to effectively prevent the cleaning solution from entering the developer supply system when cleaning the developer supply plate.
[0015]
According to one embodiment, the developer supply mechanism (2, 13) holds the developer guide plate (15) in a state where the one surface is inclined backward in the traveling direction.
[0016]
According to such a configuration, it is possible to more effectively reduce the supply speed of the developer when reaching the substrate to be processed, so that the influence on the resist film when the developer is supplied can be reduced.
[0017]
According to one embodiment, the developer supply system (16, 26, 27, 28, 29, 30) is arranged opposite the developer guide plate (15). And a developing solution supply nozzle (16) for supplying a developing solution to the surface of the developing device.
[0018]
According to such a configuration, the developing solution injected from the developing solution supply nozzle to one surface of the developing solution guide plate is diffused on one surface of the developing solution guide plate by the pressure at the time of spraying, and the processing target is uniformly spread. It will be supplied on the substrate.
[0019]
According to one embodiment, the developer supply system (16, 26, 27, 28, 29, 30) has a developer supply passage (81) opening on one surface of the developer guide plate (15). Things.
[0020]
According to such a configuration, the developer supplied in an interdigital shape from the upper portion of the developer guide plate spreads as it descends along the developer guide plate, and is uniformly supplied onto the substrate to be processed. Will be.
[0023]
According to one embodiment, a plurality of the developer guide plates (15) are provided at predetermined intervals along the driving direction. In this case, there is provided a plurality of developer supply systems (16) for supplying the developer to the plurality of developer guide plates (15), and the control is such that the amount of the developer supplied by each developer supply system can be individually controlled. It preferably has a portion (6). Further, it is preferable that the control unit controls the supply amount according to the position of the developer guide plate, and supplies a uniform amount of the developer over the front surface of the substrate to be processed.
[0024]
According to such a configuration, since the developer can be supplied by the plurality of developer guide plates, the developer can be filled in a shorter time.
[0025]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, an embodiment of the present invention will be described with reference to the drawings.
[0026]
FIG. 1 is a schematic configuration diagram illustrating a development processing apparatus according to an embodiment. The developing apparatus includes a wafer holding unit 2 for holding a wafer 1 (a wafer to which a resist solution is applied and subjected to an exposure process) as a substrate to be processed, and a developing solution supply for supplying a developing solution as a processing solution onto the wafer 1. The apparatus includes a unit 3, a cup 4 for receiving a developer scattered from above the wafer 1, a cleaning unit 5 for cleaning the developed wafer 1, and a control unit 6 for controlling these mechanisms.
[0027]
The wafer holding unit 2 includes a spin chuck 7 that holds the wafer 1 by suction, and a spin chuck driving mechanism 8 that drives the spin chuck 7 to rotate and to move up and down. The wafer holding unit 2 has a function of rotating the wafer 1 at a high speed when washing and removing the developer supplied by the developer supply unit 3 and shaking off the developer by centrifugal force. The developing solution shaken off from the edge of the wafer 1 is received by the cup 4 and discharged to the outside from a drainage path 10 provided at a lower end of the cup 4.
[0028]
On the other hand, the developer supply unit 3 includes an X-direction driving mechanism 11, a Z-direction driving mechanism 12 held by the X-direction driving mechanism 11 so as to be able to reciprocate in the X direction, and a Z-direction driving mechanism 12 And a developer supply unit 13 held as possible. The developer supply unit 13 includes a holder 14, a developer guide plate 15 that is held by the holder 14 such that the front surface in the traveling direction is inclined backward, and a developer guide plate 15 that is held by the holder 14 and faces the developer guide plate 15. It comprises a held developer supply nozzle 16 and an air blow nozzle 17 provided above the developer supply nozzle 16 and also held opposite to the developer guide plate 15.
[0029]
FIGS. 2 and 3 are enlarged views showing the main part of the developer supply unit 13.
[0030]
As shown in FIG. 2, the developer guide plate 15 has a width direction substantially equal to the diameter of the wafer 1, for example, a length of 204 mm if the diameter of the wafer is 200 mm, for example, made of quartz. It is a plate member. As shown in FIGS. 2 and 3, bumps 19 are formed in the height direction of the front surface of the plate 15 (indicated by an arrow α in the drawing). The bump 19 is formed over the entire length of the developer guide plate 15 in the width direction.
[0031]
The developer supply nozzle 16 is held so as to spray the developer to a position higher than the bumps 19 on the plate 15. As shown in FIG. 2, a plurality of developer supply nozzles 16 are arranged at predetermined intervals in the width direction of the developer guide plate 15. The developer 21 jetted from each developer supply nozzle 16 is diffused along the entire length of the guide plate 15 in the width direction along the bumps 19, and the speed of the developer is reduced when passing over the bumps 19. The supply speed when reaching the wafer 1 is controlled to a speed close to its own weight. Therefore, the developer 21 is supplied to the surface of the wafer 1 more uniformly and with a soft impact.
[0032]
The lower end of the guide plate 15 has a rounded edge 22 at the front end in the traveling direction, a lower surface 23 formed in a wavy shape, and a rear end 24 in the traveling direction formed at an acute angle. ing. The guide plate 15 is driven in the X direction with the lower end surface 23 being close to the surface of the wafer 1 by, for example, 1 to 3 mm. According to such a configuration, the developer 21 supplied to the surface of the wafer 1 can be satisfactorily flowed backward while being leveled, and the rear end 24 is formed at an acute angle. The separation from the plate 15 can be performed well.
[0033]
On the other hand, as shown in FIG. 2, for example, only one air blow nozzle 17 is provided, and the air blow nozzle 17 faces a position higher than the developer supply nozzle 16 on the front surface of the developer guide plate 15. According to such a configuration, since high-pressure air can be blown from the nozzle 17 onto the front surface of the developer guide plate 15, the developer remaining on the surface of the developer guide plate 15 can be effectively used. Can be removed.
[0034]
Here, the developer supply nozzle 16 and the air blow nozzle 17 are connected to a supply system 25 shown in FIG. First, the developer supply section will be described. An inert gas such as N 2 is supplied to the developer tank 26 containing the developer.₂Gas is blown, and the gas pressure causes the developing solution to be sent to the developing solution supply nozzle 16 through the filter 27, the liquid amount controller 28, the on-off valve 29, and the supply pipe 30. Describing a high-pressure air supply system, high-pressure air supplied by an air pump 31 is connected to the air blow nozzle 17 through a filter 32, an on-off valve 33, and a supply pipe.
[0035]
The supply and stop of the developer and the high-pressure air are performed by the respective on-off valves 29 and 33, and these on-off valves 29 and 33 are controlled by the control unit 6. Further, the liquid amount controller 28 is also connected to the control unit 6.
[0036]
The control unit 6 is also connected to the X-direction drive mechanism 11 and the Z-direction drive mechanism 12. By controlling these, the developer supply unit 13 is lowered to move the plate 15 to the wafer 1. And the unit 13 can be scanned and driven in the X direction.
[0037]
Next, the cleaning section 5 provided on the side of the developer supply section 3 will be described.
[0038]
The cleaning processing unit 5 includes a Zθ driving mechanism 36, a cleaning nozzle 37 held by the Zθ driving mechanism 36 and positioned to face the center of the wafer 1 held by the spin chuck 7, and a Zθ driving mechanism 36. Drive unit 38 for operation. From the Zθ drive mechanism 36, a supply pipe 40 connected to the cleaning nozzle 37 is led out. The supply pipe 40 is connected to a cleaning liquid supply tank 42 via an on-off valve 41.
[0039]
The cleaning liquid in the cleaning liquid supply tank 42 is supplied with an inert gas such as N₂When the gas is blown, the gas pressure is supplied to the cleaning nozzle 37 through the on-off valve 41. The on-off valve 41 and the Zθ drive unit 38 are connected to the control unit 6, and the nozzle 37 is positioned to face the center of the wafer 1 according to a command from the control unit 6, and the cleaning liquid is sprayed onto the wafer 1. It is supposed to be.
[0040]
Next, the operation of this device will be described with reference to the flowchart of FIG.
[0041]
First, the wafer 1 is loaded into the developing device (step S1). That is, the spin chuck 7 is driven to move up above the cup 4, and the wafer 1 coated with the resist liquid in the previous process and subjected to the exposure processing is transferred from the arm (not shown) to the spin chuck 7 and held there. Thereafter, the spin chuck 7 is driven to descend, and the wafer 1 is accommodated in the cup 4.
[0042]
Next, the developer supply unit 13 is driven downward by the Z-direction drive mechanism 12 with the developer supply unit 13 positioned at an initial position (home position) on the left side of the paper surface of FIG. 1 (step S2). At this time, the lower end of the guide plate 15 of the supply unit 13 is outside the wafer 1, and the lower end surface is held at a height about 1 mm higher than the surface of the wafer 1.
[0043]
Next, the X-direction drive mechanism 11 operates to scan-drive the supply unit 13 in the X direction (step S3), and the opening / closing valve 29 is opened at a predetermined developer supply start timing, and the supply nozzle 16 is opened. The supply of the developer is started (Step S4). The developer supply start position is preferably immediately before the edge 22 of the developer guide plate 15 reaches the wafer 1. The actual opening timing of the on-off valve 29 is determined in consideration of the time lag from when the on-off valve 29 is opened until the developer actually reaches the wafer 1.
[0044]
When the supply of the developing solution is started by the above steps, the supplying unit 13 moves the developing solution onto the wafer 1 while moving in the X direction at a constant speed, for example, a scan speed of 5 to 20 cm / sec in the state shown by the arrow α. Is supplied (step S5). As shown in FIG. 3, the developing solution supplied onto the wafer 1 is smoothly guided to the lower end surface 23 of the plate 15 by the edge portion 22 having the curved surface, and is uniformly distributed by the lower end surface 23. As a result, a uniform developer film of about 1 mm is formed after passing through the plate 15.
[0045]
In this embodiment, the flow rate of the developer supplied from the developer supply nozzle 16 is constant over the entire process. However, since the supply area of the developer gradually increases toward the center of the wafer 1 and gradually decreases as the distance from the center increases, the amount of the developer may be changed accordingly. When the supply amount of the developer is reduced, it is preferable that only one developer supply nozzle 16 is provided so as to face the center of the developer guide plate 15 and the flow is controlled by the flow controller 29. In this case, if the flow rate is small, the spread of the developer can be reduced and the supply range of the developer can be narrowed. If the flow rate is increased, the supply range can be widened and the developer can be saved.
[0046]
Then, just before the developer guide plate 15 overscans the other end of the wafer 1, the supply of the developer is stopped (step S6), and after the overscan, the scanning of the supply unit 13 in the X direction is also stopped (step S6). Step S7). During the above-described developing solution supply step, excess developing solution dripping from the peripheral portion of the wafer 1 is received by the cup 4 and discharged to the outside from the discharge path 10.
[0047]
When the supply of the developer is stopped, the developer guide plate 15 is washed (step S8). That is, the cleaning liquid is sprayed from the air blow nozzle 17 mounted above the developer supply nozzle 16 toward the developer guide plate 15, so that the front surface of the developer guide plate 15 that is soiled with the developer is cleaned. Is done.
[0048]
When the developer guide plate 15 is washed, the developer supply unit 13 is driven to move up and out of the cup 4, and is returned to the initial position at the left end in the drawing by operating the X drive mechanism. (Step S9).
[0049]
When the developer supply unit 13 is returned to the initial position and a predetermined development time has elapsed, the wafer is washed (developer is removed) (step S10). That is, first, the Zθ drive mechanism 38 is operated to cause the cleaning nozzle 37 to face the center of the wafer 1. Then, the opening / closing valve 41 is operated to supply pure water as a cleaning liquid to the center of the wafer, and the spin chuck driving mechanism 8 is operated to rotate the wafer 1 at a high speed, thereby developing the wafer. The liquid is washed away with the cleaning liquid. Next, when the supply of the pure water is stopped, the wafer 1 is shaken off and dried (Step S11).
[0050]
When the drying of the wafer 1 is completed, the wafer 1 is unloaded from the developing device (step S12). That is, the wafer 1 is driven upward by the spin chuck 7, taken out by an arm (not shown), and discharged from the developing apparatus.
[0051]
According to the above configuration, the following effects can be obtained.
[0052]
First, in the scan type developing process, the developing solution can be supplied uniformly on the wafer 1 on which the resist film is formed and in a state where the impact on the resist film at the time of supply is small.
[0053]
That is, in the conventional scan developing method using a linear nozzle, the developing solution is sprayed at a high pressure from each of the discharge holes arranged at a predetermined interval on a straight line, so that the developing solution is opposed to the portion corresponding to the discharge hole. The impact (impact) given to the resist solution differs between the portions not to be subjected. For this reason, there is a possibility that unevenness occurs in the development amount and the resolution.
[0054]
However, in one embodiment of the present invention, the developer is first supplied to the upper portion of the developer guide plate 15, and is spread through the developer guide plate 15 in a state of being uniformly diffused on the developer guide plate 15. In this way, it can be reached on the wafer 1. As a result, it is possible to supply the developing solution onto the wafer 1 uniformly and with a minimal impact on the resist film.
[0055]
Further, in this embodiment, the front surface of the guide plate 15 is inclined backward, and the bump 19 is provided at an intermediate portion in the height direction. As a result, the flow rate of the developing solution is effectively reduced, and the state of the developing solution becomes closer to its own weight, so that the effect on the resist liquid film can be more effectively reduced.
[0056]
Secondly, when the developer guide plate 15 is washed, the cleaning solution can be effectively prevented from entering the developer supply nozzle 16.
[0057]
That is, in the conventional scanning method, the lower end surface of the linear nozzle where the discharge holes are provided is brought into contact with the developer surface to discharge the developer and level the surface. For this reason, it is necessary to clean the lower end surface of the nozzle at regular intervals. In this case, since the cleaning water may enter the discharge holes, it is preferable that the cleaning water is removed. There is a problem that it is not possible to carry out the development.
[0058]
However, according to the configuration of this embodiment, since the developer supply nozzle 16 is disposed opposite to the upper portion of the developer guide plate 15, the cleaning solution is There is no intrusion into. Therefore, there is an effect that the developer can be supplied immediately without removing the washing water as in the related art.
[0059]
This developing apparatus is preferably applied to the coating and developing system shown in FIGS.
[0060]
As shown in FIG. 5, the coating and developing system includes a cassette unit 50 for sequentially taking out the wafers 1 from a cassette CR in which the wafers 1 are stored, and a resist solution coating and developing process for the wafers 1 taken out by the cassette unit 50. A processing unit 51 for performing a process is provided, and an interface unit 52 for transferring the wafer 1 coated with the resist solution to an exposure apparatus (not shown).
[0061]
The cassette section 50 is provided with four projections 60a for positioning and holding the cassette CR, and a first sub-arm mechanism 61 for taking out the wafer 1 from the cassette held by the projections 60a. When the sub arm mechanism 61 takes out the wafer 1, the sub arm mechanism 61 rotates in the θ direction to change its direction, and can transfer the wafer 1 to the main arm mechanism 62 provided in the process section 51. ing.
[0062]
The transfer of the wafer 1 between the cassette unit 50 and the processing unit 51 is performed via the third processing unit group G3. The third processing unit group G3 is configured by vertically stacking a plurality of process processing units as shown in FIG. That is, the processing unit group G3 includes a cooling unit (COL) for cooling the wafer 1, an adhesion unit (AD) for performing a hydrophobic treatment for improving the fixability of the resist solution to the wafer 1, and the alignment of the wafer 1. Alignment unit (ALIM) to perform, an extension unit (EXT) for holding the wafer 1 on standby, two pre-baking units (PREBAKE) for performing heat processing before exposure processing, and two for performing heat processing after exposure processing Post-baking units (POBAKE) are sequentially stacked from bottom to top.
[0063]
The transfer of the wafer 1 to the main arm mechanism 62 is performed via the extension unit (EXT) and the alignment unit (ALIM).
[0064]
As shown in FIG. 5, around the main arm mechanism 62, first to fifth processing unit groups G1 to G5 including the third processing unit group G3 surround the main arm mechanism 62. It is provided in. Similarly to the third processing unit group G3 described above, the other processing unit groups G1, G2, G4, and G5 are configured by stacking various processing units in the vertical direction.
[0065]
As shown in FIG. 6, the developing device (DEV) of this embodiment is provided in the first and second processing unit groups G1 and G2. The first and second processing unit groups G1 and G2 are configured by vertically stacking a resist coating device (COT) and a developing device (DEV).
[0066]
On the other hand, as shown in FIG. 7, the main arm mechanism 62 includes a cylindrical guide 69 extending vertically and a main arm 68 driven up and down along the guide 69. The main arm 68 is configured to rotate in the plane direction and to be driven forward and backward. Therefore, by driving the main arm 68 in the vertical direction, the wafer 1 can be arbitrarily accessed to each processing unit of each of the processing unit groups G1 to G5.
[0067]
The main arm mechanism 62, which has received the wafer 1 from the cassette unit 50 via the extension unit (EXT) of the third processing unit group G3, first transfers the wafer 1 to the adhesion unit of the third processing unit group G3. (AD), and subjected to a hydrophobic treatment. Next, the wafer 1 is unloaded from the adhesion unit (AD) and cooled by the cooling unit (COL).
[0068]
The cooled wafer 1 is positioned by the main arm mechanism 62 so as to face the resist liquid coating apparatus (COT) of the first processing unit group G1 (or the second processing unit group G2), and is carried in. The wafer 1 to which the resist liquid has been applied by the resist liquid applying apparatus is unloaded by the main arm mechanism and transferred to the interface unit 52 via the fourth processing unit group G4.
[0069]
As shown in FIG. 7, the fourth processing unit group G4 includes a cooling unit (COL), an extension cooling unit (EXT-COL), an extension unit (EXT), a cooling unit (COL), and a post-exposure unit. A baking unit (PEBAKE) and a post-baking unit (POBAKE) are sequentially stacked from bottom to top.
[0070]
The wafer 1 taken out of the resist liquid coating apparatus (COT) is first inserted into a prebaking unit (PREBAKE) and dried by removing a solvent (thinner) from the resist liquid.
[0071]
Next, the wafer 1 is cooled by a cooling unit (COL), and then transferred to a second sub-arm mechanism 54 provided in the interface unit 52 via an extension unit (EXT).
[0072]
The second sub-arm mechanism 54 that has received the wafers 1 sequentially stores the received wafers 1 in the cassette CR. The interface unit transfers the wafer 1 stored in the cassette CR to an exposure apparatus (not shown) in a state where the wafer 1 is stored in the cassette CR, and receives the cassette CR storing the exposed wafer 1.
[0073]
The wafer 1 after the exposure processing is transferred to the main arm mechanism 62 via the fourth processing unit group G4 in the opposite manner, and the main arm mechanism 62 needs the exposed wafer 1 If there is, it is inserted into a post-exposure baking unit (PEBAKE) and then inserted into the developing device (DEV) of this embodiment to perform a developing process by a scan method. The wafer 1 after the development processing is conveyed to any one of the post-baking units (POBAKE), heated and dried, and then discharged to the cassette unit 50 via the extension unit (EXT) of the third processing unit group G3. .
[0074]
The fifth processing unit group G5 is selectively provided, and in this example, has the same configuration as the fourth processing unit group G4. Further, the fifth processing unit group G5 is movably held by the rail 55, so that maintenance processing for the main arm mechanism 62 and the first to fourth processing unit groups G1 to G4 can be easily performed. ing.
[0075]
When the developing apparatus of the present invention is applied to the coating and developing unit shown in FIGS. 5 to 7, parallel processing of a plurality of wafers can be easily performed, so that the coating and developing process of the wafer 1 can be performed very efficiently. Can do it. In addition, since the processing units are vertically stacked, the installation area of the apparatus can be significantly reduced.
[0076]
It should be noted that this embodiment can be applied to an apparatus other than such a coating and developing unit. Various modifications can be made without departing from the scope of the invention.
[0077]
First, in the one embodiment, the developer supply nozzle 16 is opposed to the front surface of the developer guide plate 15, and the developer is ejected toward the developer guide plate 15. It is not limited.
[0078]
For example, as shown in FIG. 8, the developer may be discharged from the inside of the developer guide plate 15. That is, in this configuration, a plurality of developer supply passages 81 opened at the front of the developer guide plate 15 are provided at predetermined intervals above the developer guide plate 15, and the developer supply pipe 30 is connected to the plate. 15 is connected to the supply passage 81 from the back side. A guide cover 82 for guiding the developer discharged from each developer supply passage 81 downward is attached to the front surface of the plate 15.
[0079]
According to such a configuration, the developer is discharged in an interdigital shape from the upper portion of the guide plate 15 and diffuses over the entire surface of the plate 15 while flowing downward along the guide plate 15. , And reaches the surface of the wafer 1 as a uniform film. Therefore, even with such a configuration, the same effect as in the first embodiment can be obtained. In the embodiment, the number of the air blow nozzles 17 is one. However, in order to blow the high-pressure air more uniformly over the front surface of the developer guide plate 15, the four air blow nozzles 17 are used. It is disposed opposite the front surface of the plate 15. In this case, the developer on the surface of the developer guide plate 15 can be more effectively removed by swinging the air blow nozzle 17 downward from above.
[0080]
Further, instead of the nozzle 17 shown in this figure, high-pressure air may be blown by using a nozzle having a slit-shaped discharge hole having the entire width of the plate 15. Further, in this embodiment, the air is blown by using the air blow nozzle 17, but other gas may be used.₂Blow gas (N₂Blow).
[0081]
Second, in the above-described embodiment, the bumps 19 are provided in the middle of the developer guide plate 15 in the height direction. However, instead of the bumps 19, recesses 91 as shown in FIG. Even with such a configuration, the flow rate of the developer when the developer passes through the concave portion 91 is reduced, so that the impact of the developer on the resist film can be reduced.
[0082]
Third, in the embodiment, only one bump 19 is provided in the middle of the developer guide plate 15 in the height direction. However, as shown in FIG. 19c) It may be provided. According to such a configuration, there is an effect that the flow rate of the developer can be more reliably controlled.
[0083]
In the example of this figure, the edge of the lower end of the plate 15 on the traveling direction side is also formed as a bump 19c. As described above, by providing the bumps at the lowermost end of the plate, the flow rate of the developing solution when contacting the resist film (the upper surface of the wafer 1) can be reduced very effectively.
[0084]
Fourth, in the embodiment, the number of the developer supply units 13 is one, but a plurality of developer supply units may be provided. For example, as shown in FIG. 11, two developer supply units 13a and 13b may be provided apart from each other by a radius of the wafer 1 in the traveling direction of the units 13a and 13b.
[0085]
In this case, the supply of the developer by the first supply unit 13a starts from one end of the wafer 1, and the supply of the developer by the second supply unit 13b starts from the center of the wafer 1. Further, the supply by the first supply unit 13a ends at the center of the wafer 1, and the supply by the second supply unit 13b ends at the other end of the wafer 1.
[0086]
However, in this case, it is desirable that the supply range of the first supply unit 13a and the supply range of the second supply unit 13b partially overlap so that a part where the developer is not supplied does not occur. In this case, the overlapping supply range is near the center of the wafer 1.
[0087]
FIG. 11B is a chart in which the horizontal axis represents the movement position of each unit 13a, 13b, and the vertical axis represents the supply flow rate of the developer in each unit 13a, 13b. As shown in this figure, the supply amount of each unit 13a, 13b is reduced to about half the other range in the overlapping supply range near the center of the wafer 1. In this figure, the Tstart point and the Tend point in the diagram for the first unit and the Tstart point and the Tend point in the diagram for the second unit have the same timing. As a result of such control, the supply amount in this overlapping supply range becomes equal to the other parts.
[0088]
The supply amount is controlled by controlling the liquid amount controllers 28 for the units 13a and 13b shown in FIG. 11A individually by the control unit 6 according to the drive positions of the units 13a and 13b. Be done.
[0089]
According to such a configuration, since the liquid supply can be performed by the two supply units 13a and 13b, the liquid supply of the developer can be completed in a shorter time. In addition, by controlling the supply amount at the central portion of the wafer, the developer can be more evenly filled, so that good development can be expected.
[0090]
【The invention's effect】
As described above, according to the present invention, it is possible to solve various problems that have occurred when a developing solution is loaded on a substrate to be processed such as a wafer in a conventional scan developing method, Development processing can be performed.
[Brief description of the drawings]
FIG. 1 is a schematic configuration diagram showing an embodiment of the present invention.
FIG. 2 is an enlarged perspective view showing a developing solution processing unit, which is also a main part.
FIG. 3 is a schematic configuration diagram showing a positional relationship between a developer guide plate and a developer supply nozzle.
FIG. 4 is a flowchart illustrating a developing process.
FIG. 5 is a plan view showing the overall configuration of a coating and developing system to which an embodiment of the present invention is applied.
FIG. 6 is a front layout diagram showing the overall configuration of a coating and developing system to which an embodiment of the present invention is applied.
FIG. 7 is a rear view showing the overall configuration of a coating and developing system to which an embodiment of the present invention is applied.
FIG. 8 is a perspective view showing another embodiment of the present invention.
FIG. 9 is a schematic configuration diagram showing another embodiment of the present invention.
FIG. 10 is a schematic configuration diagram showing another embodiment of the present invention.
FIG. 11 is a schematic configuration diagram and a timing chart showing another embodiment of the present invention.
[Explanation of symbols]
G1 to G5: first to fifth processing unit groups
1 ... Wafer
2 ... Wafer holder
3: developer supply section
4 ... cup
5. Cleaning section
6 ... Control unit
7 ... Spin chuck
8 ... Spin chuck drive mechanism
9 ... Treatment liquid supply thin tube
10 ... drainage channel
11 X-direction drive mechanism
12 ... Z direction drive mechanism
13: developer supply unit
13a: First supply unit
13b: second supply unit
14 ... Holder
15: Developer guide plate
16: developer supply nozzle
17 ... Nozzle for air blow
19 ... Bump
21 ... Developer
22 ... edge part
23 ... Bottom face
24 ... rear end
25 ... Supply system
26 ... Developer tank
27 ... Filter
28 ... Liquid level controller
29 ... On-off valve
30 ... developer supply pipe
31 ... Pump
32 ...filter
33 ... On-off valve
34 ... supply pipe
36 ... Zθ drive mechanism
37… Cleaning nozzle
38 ... Zθ drive unit
40 ... supply pipe
41 ... On-off valve
42 ... cleaning liquid supply tank
50 ... cassette unit
51 ... Processing unit
52 Interface unit
54... Second sub-arm mechanism
55… Rail
60a ... protrusion
61 first sub arm mechanism
62 ... Main arm mechanism
68… Main arm
69… Guide
81: developer supply passage
82… Guide cover
91 ... recess

Claims (10)

A development processing apparatus for developing a photoresist film by supplying a developing solution to a processing target substrate having a photoresist film whose pattern has been exposed,
A substrate holding mechanism for holding the substrate to be processed horizontally,
A developing solution supply mechanism that is held above the substrate to be processed held by the substrate holding mechanism and supplies a developing solution onto the substrate to be processed while moving in a predetermined horizontal direction,
This developer supply mechanism,
The developer is held in a state where the lower end thereof is opposed to the substrate with a predetermined gap therebetween, and is held with one surface thereof opposed to the driving direction of the developer supply mechanism, and the uneven surface is provided on one surface thereof. Information boards,
By supplying the developing solution to the upper portion of one surface of the developing solution guide plate, the developing solution is supplied from the lower end portion of the developing solution guide plate to the developing solution onto the substrate to be processed. And a developing system. A development processing apparatus for developing a photoresist film by supplying a developing solution to a processing target substrate having a photoresist film whose pattern has been exposed,
A substrate holding mechanism for holding the substrate to be processed horizontally,
A developing solution supply mechanism that is held above the substrate to be processed held by the substrate holding mechanism and supplies a developing solution onto the substrate to be processed while moving in a predetermined horizontal direction,
This developer supply mechanism,
A developer guide plate held in a state where the lower end thereof is opposed to the substrate with a predetermined gap therebetween, and one surface of which is held opposite to the driving direction of the developer supply mechanism,
By supplying the developing solution to the upper portion of one surface of the developing solution guide plate, the developing solution is supplied from the lower end portion of the developing solution guide plate to the developing solution onto the substrate to be processed. and the system,
A gas blow nozzle that is provided at a position above a position where the developer is supplied to the developer guide plate, injects gas toward the developer guide plate, and removes residual developer. Characteristic development processing equipment. A development processing apparatus for developing a photoresist film by supplying a developing solution to a processing target substrate having a photoresist film whose pattern has been exposed,
A substrate holding mechanism for holding the substrate to be processed horizontally,
A developing solution supply mechanism that is held above the substrate to be processed held by the substrate holding mechanism and supplies a developing solution onto the substrate to be processed while moving in a predetermined horizontal direction,
This developer supply mechanism,
The lower end portion is held in a state where it faces the substrate with a predetermined gap therebetween, and one surface thereof is held so as to face the driving direction of the developer supply mechanism, and is held along the drive direction of the developer supply mechanism. A plurality of developer guide plates provided at intervals of
By supplying the developing solution to the upper portion of one surface of the developing solution guide plate, the developing solution is supplied from the lower end portion of the developing solution guide plate to the developing solution onto the substrate to be processed. And a developing system. The apparatus further comprises a plurality of developer supply systems for supplying a developer to each of the plurality of developer guide plates, and a control unit capable of individually controlling the amount of the developer supplied by each developer supply system. An apparatus according to claim 3. 5. The apparatus according to claim 4, wherein the control unit controls a supply amount according to a position of the developer guide plate, and supplies a uniform amount of the developer over the entire surface of the substrate to be processed. 6. . Among the plurality of developer supply mechanisms , a first developer supply mechanism is configured to start supplying the developer to the substrate to be processed at a position from one end of the substrate to a substantially central portion, and to perform second development. The liquid supply mechanism moves while supplying the developer in the same direction from the substantially central portion to the other end of the substrate to be processed,
The apparatus according to claim 4, wherein a substantially central portion of the substrate to be processed is provided with an overlapping supply region of the developing solution . 7. The developing solution supply mechanism according to claim 1, wherein the developing solution guide plate holds the developing solution guide plate in a state where the one surface is inclined backward in a traveling direction. Equipment. 4. The developing solution supply system according to claim 1, wherein the developing solution supply system includes a developing solution supply nozzle that is arranged to face the developing solution guide plate and supplies a developing solution to a surface of the developing solution guide plate. The device according to any one of claims 6 to 9. The apparatus according to any one of claims 1 to 6, wherein the developer supply system has a developer supply passage that opens to a surface of the developer guide plate. The apparatus according to any one of claims 1 to 6, wherein a front portion in a traveling direction of a lower end portion of the developer guide plate is formed to be more convex than one surface.

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