JP3578335B2 - Power semiconductor devices - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a power semiconductor device which is superior in practical use because of a wide selective range of heat sink materials and easy to manufacture and superior in recycling, and can realize superior radiation characteristics. SOLUTION: A semiconductor module 100 having a power semiconductor element chip and radiation metal plates disposed on both sides of the chip is mounted on a heat sink 110, and a pressure holder 112 presses the radiation metal plate at the opposite side of the module 100 to thereby press the radiation metal plate at the heat sink side of the module 100 to the heat sink 100 surface.

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a power semiconductor device, and more particularly to a power semiconductor device having at least a heat sink and a semiconductor module.
[0002]
[Prior art]
Electric vehicles that run on electric power, such as hybrid vehicles, fuel cell vehicles, and pure rechargeable battery vehicles, use a robust, simple and easy-to-control AC motor. Inverters for conversion, particularly three-phase inverters, are employed. Here, the application of the motor is not limited to running, but includes power generation, engine start, driving of an auxiliary machine such as an A / C compressor, and the like. In that case, a plurality of inverters will be stacked.
[0003]
Japanese Patent Laying-Open No. 11-346480 proposes an inverter device including a semiconductor switching module having an insulating substrate soldered to a heat sink and a semiconductor element bonded to the insulating substrate.
[0004]
[Problems to be solved by the invention]
However, the inverter device described in the above publication, in which an insulating substrate of a semiconductor switching module is soldered to a heat sink, uses a heating furnace for melting solder for soldering the insulating substrate when using a heat sink having a large heat capacity such as for an electric vehicle. In addition to the necessity, there is a problem that productivity is reduced due to the necessity, and an expensive material such as Al-SiC or Cu / Mo having a thermal expansion coefficient close to that of an insulating substrate (usually metallized AlN) is used. There was a problem in practicality because it was necessary. Further, there is a problem that the heat sink to which the insulating substrate is soldered is inferior in recyclability.
[0005]
The present invention has been made in view of the above problems, and has a wide selection range of heat sink materials, is excellent in practicality because of easy manufacture, and furthermore, has excellent heat dissipation characteristics despite being excellent in recyclability. It is an object of the present invention to provide a feasible power semiconductor device.
[0006]
[Means for Solving the Problems]
Each invention A power semiconductor device comprising: a semiconductor module having a metal heat radiating plate disposed on both sides of a power semiconductor element chip; a heat sink disposed in contact with the metal heat radiating plate of the semiconductor module; The metal heat sink on the side opposite to the heat sink is urged to press the metal heat sink on the side of the heat sink of the semiconductor module against the surface of the heat sink and to absorb heat from the metal heat sink on the side of the heat sink. And a bias holding member.
[0007]
According to this configuration, the bias holding member adopts a configuration in which the double-sided heat radiation type semiconductor module is pressed against the heat sink and held, so that good contact between the semiconductor module and the heat sink can be realized, Heat can be satisfactorily radiated from the heat sink to the heat sink. At the same time, good contact between the semiconductor module and the bias holding member can be realized, so that heat can be satisfactorily radiated from the semiconductor module to the bias holding member. That is, the structure in which the semiconductor module is pressed against the heat sink by the urging holding member can ensure good heat radiation from both main surfaces of the semiconductor module.
[0008]
Further, since solder bonding is not used to fix the semiconductor module to the heat sink, the assembling process is simplified, and the reliability of the solder bonding is reduced due to thermal stress (a force generated due to a difference in the so-called thermal expansion coefficient). Nothing.
[0009]
In this configuration, the biasing holding member is preferably made of metal to improve thermal conductivity, but is not limited thereto. Further, it is preferable that the urging holding member is brought into direct contact with the metal heat radiating plate on the side opposite to the heat sink of the semiconductor module, but an intermediate member may be interposed. The urging and holding member having electric conductivity can be brought into contact with the metal heat sink on the side opposite to the heat sink of the semiconductor module so as to be electrically conductive. In this case, the urging and holding member can also function as a wiring member.
[0010]
Preferably, The bias holding member is fixed to the heat sink. According to this configuration, since the fixing of the urging holding member can be easily and easily performed, the entire structure can be simplified, and the heat can be dissipated from the urging holding member to the heat sink. It can be simply a heat transfer member, and cooling of the heat sink can be realized simply and easily.
[0011]
Invention 1 further includes: The urging holding member includes a beam for urging the semiconductor module and urging the semiconductor module, and at least a pair of legs protruding from both ends of the beam toward the heat sink. As a result, the semiconductor module can be held by the both-end clamping structure that can evenly disperse the contact pressure, so that stress is not locally concentrated on the contact surface between the semiconductor module, the bias holding member and the heat sink, and Thermal resistance can be reduced uniformly.
[0012]
Preferably, The thermal expansion coefficient of a portion of the leg portion of the urging holding member equal to the thickness of the semiconductor module is equal to the average heat of the metal radiating plate and the power semiconductor element chip on both sides of the power semiconductor element chip. It is characterized in that it matches the expansion coefficient within a predetermined error range. According to this configuration, the leg portion of the urging holding member and the semiconductor module adjacent thereto are set to a predetermined allowable error range in the thickness direction of the semiconductor module (this specification is less than 1%). Therefore, the thermal stress based on the difference in the coefficient of thermal expansion between the two can be kept within an allowable range within the operating temperature range, and this thermal stress can prevent the power semiconductor element chip from being damaged. The effect can be obtained.
[0013]
Since the metal radiator usually has a higher coefficient of thermal expansion than the power semiconductor element chip, at least the leg of the biasing holding member has a thermal expansion coefficient of the power semiconductor element chip and a thermal expansion coefficient of the metal radiator plate. It has a coefficient of thermal expansion in the middle of the coefficient. This kind of adjustment of the coefficient of thermal expansion (linear expansion coefficient) can be easily performed by a combination of the materials constituting the metal heat radiating plate and the legs and the thickness (length in the thickness direction of the semiconductor module).
[0014]
Further, it is advantageous that the thickness of the semiconductor module at the portion of the metal heat radiating plate is as small as possible because the difference in expansion distance between the leg and the semiconductor module due to the difference in thermal expansion coefficient becomes small.
[0015]
Preferably, It is characterized by having a soft heat transfer member having a soft and good heat conductivity provided between the urging holding member and the heat sink. Examples of this kind of soft heat transfer member include solder. According to this configuration, when the urging holding member is fixed to the heat sink, the contact surface between the two can be adapted by plastic deformation of the soft heat transfer member, and the thermal resistance between the two can be reduced.
[0016]
Preferably, A thin insulating member is provided between the urging holding member and the heat sink. According to this configuration, the metal heat sink on the heat sink side of the semiconductor module can be set independently of the heat sink potential.
[0017]
Preferably, A thin wall interposed between the metal heat radiating plate on the anti-heat sink side of the semiconductor module and the urging holding member and between the metal heat radiating plate on the heat sink side of the semiconductor module and the urging holding member; Characterized by having an insulating member of According to this configuration, even if the urging holding member is electrically conductive, the urging holding member and the metal heat radiating plate on the heat sink side of the semiconductor module, and the metal heat radiating plate on the heat sink side of the semiconductor module And the urging member can be electrically insulated.
[0018]
Preferably, The heat sink has a cooling fluid passage therein, and the urging holding member has an internal cooling passage communicating with the cooling fluid passage of the heat sink.
Thereby, fluid cooling can be performed from both sides of the semiconductor module with a simple structure.
[0019]
Preferably, The semiconductor device has a circuit component superimposed on the semiconductor module, and the urging and holding member collectively presses the semiconductor module and the circuit component against the heat sink. Thus, high-density mounting can be performed with a simple assembly structure. This circuit component can also function as a heat sink mass on the side opposite to the heat sink of the semiconductor module.
[0020]
Preferably, The metal radiator plate on the side opposite to the heat sink of the semiconductor module is in direct contact with a terminal of the circuit component. Thus, the wiring structure can be simplified, the wiring distance between them can be short, and the adverse effects of wiring resistance and wiring inductance can be prevented.
[0021]
Preferably, The thermal expansion coefficient of a portion of the leg portion of the urging holding member equal to the total thickness of the semiconductor module and the circuit component is the metal heat dissipation plate on both sides of the power semiconductor element chip, The average thermal expansion coefficient in the thickness direction of the semiconductor element chip and the circuit component is matched within a predetermined error range. This makes it possible to secure a predetermined pressing force to reduce the thermal resistance and reduce the thermal stress acting on the power semiconductor element chip.
[0022]
Preferably, A terminal member is interposed between the metal radiator plate on the side opposite to the heat sink of the semiconductor module and the terminal of the circuit component. According to this configuration, the metal radiator plate, the circuit component, and the terminal member can be realized simultaneously with the holding of the metal radiator plate and the circuit component, and a simple and high-density circuit structure can be realized.
[0023]
Preferably, The semiconductor module constitutes a part or all of an inverter circuit, the circuit component is formed of a smoothing capacitor connected in parallel between positive and negative DC terminals of the inverter circuit, and the terminal member is formed of a bus bar for DC power supply connection. It is characterized by becoming. This can solve the problem of a large surge voltage due to wiring inductance between the inverter circuit and the smoothing capacitor, which is a problem in the inverter circuit device, and can reduce the size and weight of the smoothing capacitor.
[0024]
Preferably, Among the legs of the urging holding member, the thermal expansion coefficient of a portion equal to the total thickness of the semiconductor module, the terminal member, and the circuit component is the metal heat dissipation plate on both sides of the power semiconductor element chip, The average thermal expansion coefficient in the thickness direction of the power semiconductor element chip, the terminal member, and the circuit component is matched within a predetermined error range.
This allows the above Similarly to the above, a predetermined pressing force can be secured to reduce the thermal resistance, and the thermal stress acting on the power semiconductor element chip can be reduced.
[0025]
Preferably, The urging and holding member is characterized in that the urging and holding members collectively urge and hold a plurality of the semiconductor modules arranged close to each other. Thereby, the number of parts and the number of assembling steps can be reduced.
[0026]
Preferably, The leg portion of the bias holding member has a curved shape, and the elastic modulus in the thickness direction of the semiconductor module is larger than the elastic modulus of the material of the bias holding member. As a result, the thermal stress caused by the difference in the thermal expansion coefficient between the leg and the semiconductor module in the thickness direction is significantly reduced without deteriorating the thermal or electrical coupling performance between the semiconductor module and the heat sink or the biasing holding member. Can be reduced.
[0027]
Invention 2 further includes: The heat sink has side walls protruding adjacent to both sides of the semiconductor module, and the biasing holding member is formed of a thin metal plate, and both ends are fixed to the side walls. .
[0028]
According to this configuration, the structure of the bias holding member can be simplified, and the bias holding member is made of a thin metal plate that is easily elastically deformed in the thickness direction of the semiconductor module 100. Becomes easier.
[0038]
invention 3 Further, a pair of semiconductor modules forming upper and lower arms of the same phase are arranged adjacently, and six semiconductor modules have a three-phase inverter circuit forming each arm. One of the main surfaces has a region connected to the first main electrode terminal also serving as the first metal heat sink and a region connected to the signal terminal, and the other of the pair of main surfaces has a And a region connected to a second main electrode terminal also serving as the metal heatsink, wherein the two main electrode terminals are individually separated from two diagonal halves of two parallel sides of the semiconductor module. The signal terminal protrudes to the side of the semiconductor module from one of the other diagonal halves of the two sides.
[0039]
The MOS transistor module will be described as an example, and the first main electrode terminal is referred to as a source electrode terminal and the second main electrode terminal is referred to as a drain electrode terminal.
[0040]
According to this configuration, the source electrode terminal and the drain electrode terminal are made to protrude from the pair of halves of two parallel sides that are diagonal to each other to the side of the semiconductor module. Thus, the source electrode terminal and the drain electrode terminal have point-symmetric (rotation-symmetric) positions with respect to each other. The signal terminal is one of a pair of other halves of the two sides that are diagonal to each other. Half Protrude to the side of the conductor module.
[0041]
As a result, the pair of semiconductor modules forming the upper and lower arms in phase can be arranged so that the source electrode terminal of the semiconductor module forming one arm and the source electrode terminal of the semiconductor module forming the other arm are staggered. The density can be arranged. Of course, the drain electrode terminals of both semiconductor modules may be alternately engaged. Further, these six semiconductor modules can be constituted by one kind of semiconductor module, the number of parts can be reduced, and maintenance management becomes easy.
[0042]
invention 4 Further, both ends of the urging holding member are press-fitted and fixed to the heat sink.
[0043]
This facilitates the coupling between the biasing holding member and the heat sink, and reduces the thermal resistance between the two, so that the cooling effect of the semiconductor module can be improved.
[0044]
Preferably, Since both ends of the urging holding member are exposed to the coolant passage in the heat sink, the cooling effect can be further improved.
[0045]
BEST MODE FOR CARRYING OUT THE INVENTION
Preferred embodiments of the present invention will be described with reference to the following examples.
[0046]
【Example】
An embodiment of a power semiconductor device of the present invention will be described with reference to the drawings.
(overall structure)
FIG. 1 is a circuit diagram of a three-phase inverter circuit device for driving motor drive control of an electric vehicle.
[0047]
Reference numeral 21 denotes a battery (DC power supply), and reference numerals 22 to 27 each denote a semiconductor element formed of an NMOS transistor which uses the parasitic diode as a flywheel diode.
[0048]
The semiconductor element 22 forms a U-phase upper arm, the semiconductor element 23 forms a U-phase lower arm, the semiconductor element 24 forms a V-phase upper arm, and the semiconductor element 25 forms a V-phase lower arm. The element 26 constitutes a W-phase upper arm, and the semiconductor element 27 constitutes a W-phase lower arm, and are individually mounted as semiconductor modules 100 to 600, respectively.
[0049]
101 is a positive DC power supply terminal of the U-phase upper arm (drain side), 102 is an AC output terminal of the U-phase upper arm (source side), 201 is an AC output terminal of the U-phase lower arm (drain side), and 202 is U This is the negative DC terminal (source side) of the phase lower arm. 301 is a positive DC power supply terminal of the V-phase upper arm (drain side), 302 is an AC output terminal of the V-phase upper arm (source side), 401 is an AC output terminal of the V-phase lower arm (drain side), and 402 is V This is the negative DC terminal (source side) of the phase lower arm. Reference numeral 501 denotes a positive DC power supply terminal of the W-phase upper arm (drain side), 502 denotes an AC output terminal of the W-phase upper arm (source side), 601 denotes an AC output terminal of the W-phase lower arm (drain side), and 602 denotes W This is the negative DC terminal (source side) of the phase lower arm.
[0050]
Each positive DC power supply terminal 101, 301, 501 is connected to the positive terminal of the battery 21 together with the positive terminal of the smoothing capacitor 28, and each negative DC power supply terminal 202, 402, 602 is connected to the negative terminal of the smoothing capacitor 28 21 negative terminal. The U-phase AC output terminals 102 and 201 are connected at a connection point 103, the V-phase AC output terminals 302 and 401 are connected at a connection point 303, and the W-phase AC output terminals 502 and 601 are connected at a connection point 503 to form a three-phase AC output terminal. Power is supplied to an armature winding (not shown) of the AC motor 29.
[0051]
Reference numeral 30 denotes a controller which outputs a control voltage to the gate electrode of each semiconductor element and detects the temperature of each semiconductor element. The operation itself of the three-phase inverter circuit and the smoothing capacitor 28 is well known, and further detailed description will be omitted. (Semiconductor module)
The U-phase upper arm semiconductor module 100 will be described below with reference to FIGS. 2 (a) and 2 (b). FIG. 2A is an exploded perspective view, and FIG. 2B is an overall perspective view.
[0052]
105 is a metal heat transfer plate having a positive DC power supply terminal 101; 106 is a metal heat transfer plate having an AC output terminal 102; 108 is a signal terminal (control electrode terminal) of the semiconductor element (power semiconductor element chip) 22; ). The signal terminals 108 include a terminal for controlling the gate electrode of the NMOS transistor and a signal terminal for monitoring the inside of the semiconductor element 22. Five signal terminals 108 are provided in FIG.
[0053]
The semiconductor element 22 is soldered on the metal heat transfer plate 105, and the metal heat transfer plate 106 is soldered on the upper surface of the semiconductor element 22. These components are sealed with a resin 109 in a state where the outer main surfaces of the metal heat transfer plates 105 and 106 are exposed and the terminals 101, 102 and 108 are projected, thereby forming the semiconductor module 100.
[0054]
In this embodiment, in particular, the signal terminal 108 and the positive DC power supply terminal (also referred to as a drain electrode terminal) 101 are arranged on the same side (particularly, the long side here) of the rectangular semiconductor module 100. The signal terminal 108 is arranged on one half of this side, and the positive DC power supply terminal (drain electrode terminal) 101 is arranged on the other half of this side. The AC output terminal (also referred to as a source electrode terminal) 102 is disposed in a half of the side having the terminals 108 and 101 on the signal terminal 108 side.
[0055]
Here, the thermal resistance from the junction of the semiconductor element (NMOS transistor) 22 to the metal heat transfer plate 105 on the drain side in the semiconductor module 100 is R1, and the thermal resistance from the junction of the semiconductor element 22 to the metal heat transfer plate 106 on the source side is R1. If the thermal resistance of the first and second metal heat transfer plates 105 and 106 is assumed to be equal, then R1 <R2.
[0056]
The reason is that the main surface of the semiconductor element 22 on the drain region side is bonded to the metal heat transfer plate 105 over the entire surface, whereas the main surface of the semiconductor element 22 on the source region side is connected to each signal terminal 108 and the wire. In order to secure a three-dimensional space for bonding connection, it is necessary to protrude a part of the source-side metal heat transfer plate 106 toward the semiconductor element 22 while avoiding the three-dimensional space. This is because only the remainder obtained by subtracting the three-dimensional space from the main surface on the source region side can be joined to the metal heat transfer plate 106. The other upper arm semiconductor modules 300 and 500 have exactly the same configuration. The semiconductor modules 200, 400, and 600 of the lower arm have exactly the same configuration as the semiconductor modules 100, 300, and 500 of the upper arm. However, the positive DC power supply terminal of the upper arm semiconductor module is replaced with the AC output terminal of the lower arm semiconductor module, and the AC output terminal of the upper arm semiconductor module is replaced with the negative DC power supply terminal of the lower arm semiconductor module. Should be read as
[0057]
In the case where an IGBT is used as the semiconductor element 22, a separate flywheel diode is required, which may be arranged in parallel with the left side of the semiconductor element 22 in FIG. In this case, the flywheel diode is mounted with the cathode side facing the metal heat transfer plate 105 having the positive DC power supply terminal 101.
[0058]
(Semiconductor module)
FIG. 3 shows a semiconductor module 200.
[0059]
205 is a metal radiator plate having an AC output terminal 201, 206 is a metal radiator plate having a negative DC power supply terminal 202, 208 is a control electrode terminal of the semiconductor element 23, and 209 is a mold resin.
[0060]
4 and 5 show an inverter device using the semiconductor module 200. FIG. FIG. 5 shows a side view thereof. FIG. 4 is a partial plan view of the U-phase portion, and FIG. 5 is a side view as viewed from A in FIG.
[0061]
The heat sink 110 is made of a water-cooled metal plate having a cooling channel formed therein, and is formed by, for example, an aluminum die casting method. The heat sink 110 is not limited to water cooling, and may be, for example, a flat tube formed by extruding or drawing Al having both strength and airtightness enough to seal a refrigerant of an air conditioner for an automobile, or a known boiling cooling type refrigerant. It is good as a tank.
[0062]
Reference numerals 100 and 200 denote semiconductor modules (hereinafter also referred to as card-type semiconductor modules), and 112 denotes a fixing member (bias holding member in the present invention). The pair of fixing members 112 are detachably fixed to the heat sink 110 from above the semiconductor modules 100 and 200 by screws 113, and individually press the semiconductor modules 100 and 200 against the upper surface of the heat sink 110.
[0063]
The smoothing capacitor 28 is fixed on the heat sink 11 adjacent to the semiconductor modules 100 and 200 such that the bottom surface thereof is in contact with the heat sink 11. 111+ is a positive DC input bus bar, and 111- is a negative DC input bus bar, which also serves as the DC input terminals 101 and 201 of the semiconductor modules 100 and 200 and the positive and negative electrodes of the smoothing capacitor 28.
[0064]
Reference numeral 1111 denotes an insulator provided to electrically insulate the positive and negative DC input bus bars 111+ and 111-. Reference numeral 121 denotes a U-phase AC output bus bar, which connects the AC output terminals 102 and 201 of the semiconductor modules 100 and 200 to the three-phase AC motor 29. The V-phase and the W-phase are the same as the U-phase, and the description is omitted.
[0065]
Although not shown here, the controller 30 is disposed above the semiconductor modules 100 and 200 in parallel with the heat sink 110, and is connected to the control electrode terminals 108 and 208 of each of the semiconductor modules 100 and 200.
[0066]
A contact surface 115 between the semiconductor modules 100 and 200 and the heat sink 110 and a contact surface 116 between the semiconductor modules 100 and 200 and the fixing member 112 have a member having good heat conductivity and electrical insulation, for example, a silicon-based insulating heat dissipation sheet. However, it is also possible to replace this insulating heat radiation sheet with an insulating substrate made of ceramic or the like and heat radiation grease on both surfaces thereof. In addition, a silicon-based heat-dissipating sheet or heat-conductive grease having good heat conductivity is also provided on the contact surface 117 between the fixing member 112 and the heat sink 110. If the fixing member is an insulating member such as a resin, the heat conducting member sandwiched between the contact surfaces 116 does not require electrical insulation.
[0067]
According to the above embodiment, the semiconductor module 100 is stably held on the heat sink 110 without using solder bonding, so that it is not necessary to consider the solder life, and the life of the entire device can be extended. In addition, since solder bonding is not used, it is not necessary to use an expensive material such as Al-SiC for the heat sink 110, and the entire device can be reduced in cost.
[0068]
Also, the assembly can be realized with simple manufacturing equipment regardless of the large heat capacity of the heat sink 110. In addition, since it is configured to be mechanically removable, it is excellent in recyclability and easy to replace.
[0069]
Furthermore, since the fixing member 112 is made of a metal material having good thermal conductivity, such as Cu or aluminum, it is possible to radiate the semiconductor elements inside the semiconductor module to the heat sink 110 from both sides, compared to the case where heat is radiated from one side. , Heat radiation performance can be greatly improved. As a result, the size of the semiconductor element can be reduced, and the size and the price of the device can be reduced. One fixing member 112 may be prepared for each semiconductor module, or a plurality of semiconductor modules may be fixed by one fixing member.
[0070]
(Fixing member)
The fixing member 112 will be further described with reference to FIG. FIG. 6 is a side view of a main part of this device.
[0071]
The fixing member 112 has a beam 1121 for urging the semiconductor module, and a pair of legs 1122 projecting from both ends of the beam 1121 toward the heat sink 110. The legs 1122 are provided with holes (not shown) that penetrate in the thickness direction of the semiconductor module 100, and the fixing members 112 are fixed to the heat sink 110 by fastening the screws 113 to the heat sink 110 through the holes. The semiconductor module 100 is sandwiched between the heat sink 110 and the beam 1121 of the fixing member 112.
[0072]
Reference numeral 120 denotes a portion between the metal radiator plate (not shown) on the heat sink side of the semiconductor module 100 and the upper surface of the heat sink 110, and a portion between the metal radiator plate (not shown) on the anti-heat sink side of the semiconductor module 100 and the fixing member 112. It is an insulating heat conductive member interposed between the lower surface of the beam 1121. Reference numeral 121 denotes a heat conductive member provided between the lower surface of the leg 1122 of the fixing member 112 and the upper surface of the heat sink 110. In this embodiment, the heat conducting member 121 is made of a soft material having good heat conductivity, and is softer than the insulating heat conducting member 120.
[0073]
With this configuration, when the fixing member 120 is fastened to the heat sink 110 with the screw 113, the semiconductor module 100 can be strongly pressed against the heat sink 110 by the heat conductive member 120 having hardness. From the heat sink 110 can be satisfactorily radiated. Further, since a material softer than the insulating heat conductive member 120 is used for the heat conductive member 121, the insulating heat conductive member 120 fits well with the lower surface of the leg portion 1122 and the upper surface of the heat sink 110, and the thermal resistance can be reduced. .
[0074]
For example, aluminum nitride or a high-hardness silicon rubber sheet can be used as the insulating heat-conducting member 120, and, for example, solder, heat-conducting grease, or a graphite sheet can be used as the heat-conducting member 121. In addition, as the heat conductive member 121, a material having an electrical insulation property, for example, a low-hardness silicon rubber sheet may be adopted. The screw 113 may be made of metal or resin having electrical insulation.
[0075]
(Modification)
In the above embodiment, the insulating heat conducting member 120 is sandwiched between the semiconductor module 100 and the beam portion 1121 of the fixing member 112. However, the heat conducting member 121 is changed to an insulating heat conducting member having electrical insulation, and the insulating heat conducting member is changed. The member 120 may be a conductive member having electric conductivity. Further, the semiconductor module 100 and the beam 1121 of the fixing member 112 may be brought into direct contact. The screw 113 is made of resin. In this case, the fixing member 112 can be used as a wiring member or a terminal connected to the metal heat sink on the side opposite to the heat sink of the semiconductor module 100.
[0076]
Embodiment 2
Another embodiment will be described below with reference to FIG.
[0077]
In this embodiment, the average coefficient of thermal expansion km1 between the leg 1122 of the fixing member 112 and the heat conductive member 121 is the average coefficient of thermal expansion between the semiconductor module 100 and the two insulating heat conductive members 120 between the pair of metal heat radiation surfaces. km2 (within 1% error). The average thermal expansion coefficient km of the plurality of members A and B in this specification is defined by the following equation.
[0078]
km = (k1 · t1 + k2 · t2) / (t1 + t2)
k1 is the thermal expansion coefficient (linear expansion coefficient) of the member A, t1 is the thickness of the member A, k2 is the thermal expansion coefficient (linear expansion coefficient) of the member B, and t2 is the thickness of the member B.
[0079]
In this way, thermal stress caused by the difference in the coefficient of thermal expansion between the semiconductor module 100 and the leg portion 1122 can be eliminated, and the reliability over time can be improved. Note that the difference in the coefficient of thermal expansion is allowable as long as it does not adversely affect each part of the semiconductor module at the maximum operating temperature or the minimum operating temperature.
[0080]
(Modification)
In this setting in which the average expansion rates are made to match, the legs 1122 of the fixing member 112, the heat conducting member 121, the semiconductor module 100, and the two insulating heat conducting members 120 have different temperatures. Have different amounts of expansion. In order to compensate for the difference in the expansion amount due to the temperature difference between the components, the expansion amount in the thickness direction between the leg portion 1122 of the fixing member 112 and the heat conducting member 121 at the maximum operating temperature at which the expansion amount is the largest. In such a manner that the total corresponds to the total amount of expansion in the thickness direction of the semiconductor module 100 and the two insulating heat conductive members 120,
The material of the leg 1122 and the like can be selected.
In addition, the material of the legs 1122 and the like can be selected so that the difference in the amount of expansion is within an allowable range at each use temperature of the semiconductor module 100.
[0081]
Embodiment 3
Another embodiment will be described below with reference to FIG.
[0082]
In this embodiment, a main cooling fluid passage M is formed inside the heat sink 110, and the cooling fluid flows therethrough. The sub cooling fluid passage S is also formed in the fixing member 112, and both ends of the sub cooling fluid passage S of the fixing member 112 communicate with the main cooling fluid passage M of the heat sink 110, and both the passages M and S are substantially in series or They are connected in parallel. Thereby, the semiconductor module 100 can be cooled more favorably.
[0083]
Reference numeral 300 denotes a packing, and the packing 300 can also have a function of elastically absorbing thermal stress caused by a difference in thermal expansion coefficient between the fixing member 112 and the semiconductor module 100 in the thickness direction of the semiconductor module 100.
Reference numeral 120 denotes an insulating heat conductive member that electrically insulates the metal heat sink of the semiconductor module 100 from the heat sink 110 and the fixing member 112.
[0084]
In this embodiment, the cooling fluid is extended to the fixing member. However, the fixing member may be configured by a heat pipe and fixed to the heat sink.
[0085]
Embodiment 4
Another embodiment will be described below with reference to FIG.
[0086]
In this embodiment, other circuit components (smoothing capacitors in this embodiment) are arranged on the semiconductor modules 100 and 200 via bus bars 101 and 202, and the fixing member 112 is connected to the semiconductor module via the smoothing capacitors 28. 100 and 200 are pressed against the heat sink 110.
[0087]
By doing so, the circuit mounting density can be improved, and the wiring distance between the semiconductor module 100 forming the inverter circuit and the smoothing capacitor 28 that absorbs the switching surge voltage between the pair of DC terminals can be reduced. Also, power loss and heat generation due to wiring resistance can be reduced. The smoothing capacitor 28 and the bus bars 101 and 202 can also have a heat sink function of the semiconductor module 100.
[0088]
The metal heat radiating plate on the side opposite to the heat sink of the semiconductor modules 100 and 200 constitutes the + DC terminal or the −DC terminal of the inverter circuit, and the metal heat radiating plate (not shown) on the heat sink side of the semiconductor modules 100 and 200 has an AC output. An end is formed, and two semiconductor modules 100 and 200 are sandwiched by one fixing member 112.
[0089]
The bus bars 101 and 202 have a concave portion c into which the + DC terminal 281 and the -input terminal 282 of the smoothing capacitor 28 are fitted. Thereby, the lateral displacement of the smoothing capacitor 28 can be prevented, and the alignment at the time of mounting the smoothing capacitor becomes easy. The side surface of the concave portion c is a tapered surface having a narrow bottom, so that the DC terminals 281 and 282 of the smoothing capacitor 28 can be easily fitted and positioned. Each of the smoothing capacitors 28 can have a plurality of + DC terminals 281 and −DC terminals 282. In this case, a plurality of the concave portions c to be fitted with these are provided.
[0090]
(Modification)
Furthermore, in this embodiment, the average expansion coefficient km3 in the thickness direction of the semiconductor module 100 between the semiconductor modules 100 and 200, the smoothing capacitor 28, and the bus bars 101 and 202 is the average in the thickness direction of the leg 1122 of the fixing member 112. The material or the like of the leg 1122 is selected so as to match the expansion coefficient km4.
[0091]
The average expansion rates km3 and km4 are obtained by dividing the total expansion amount per unit temperature rise of a plurality of constituent members by the total distance in the thickness direction of the plurality of members in the same manner as in the above-described formula. Defined as the calculated value. Alternatively, in the same manner as in the above-described modification, the actual expansion in the thickness direction of each part is provided in consideration of the temperature distribution of the semiconductor modules 100 and 200 at a predetermined temperature (usually the maximum use temperature), and The expansion amounts in the thickness direction of the modules 100 and 200 may be matched. In any case, this makes it possible to solve the thermal stress problem, which is a major problem in the clamping type semiconductor module fixing method of the present configuration, to a practicable level.
[0092]
Embodiment 5
Another embodiment will be described below with reference to FIG.
[0093]
In this embodiment, the bus bars 101 and 202 are metal radiating plates on the side opposite to the heat sink of the semiconductor module 100 in the two-story circuit structure of the fourth embodiment shown in FIG. Therefore, in this embodiment, the metal heat radiating plates 101 and 202 on the side opposite to the heat sink of the semiconductor modules 100 and 200 have the concave portion c into which the + DC terminal 281 and the -input terminal 282 of the smoothing capacitor 28 are fitted. Thereby, the lateral displacement of the smoothing capacitor 28 can be prevented, and the alignment at the time of mounting the smoothing capacitor becomes easy. Other effects are the same as those of the fourth embodiment.
[0094]
(Modification)
Furthermore, in this embodiment, the average expansion coefficient km5 in the thickness direction of the semiconductor module 100 between the semiconductor modules 100 and 200 and the smoothing capacitor 28 matches the average expansion coefficient km6 in the thickness direction of the leg 1122 of the fixing member 112. In this case, the material of the leg 1122 is selected. The average expansion rates km5 and km6 are calculated based on the concept of the above-described equation, although the description is omitted. Further, similarly to the above-described modification, the actual expansion in the thickness direction of each part is provided by taking into consideration the temperature distribution of the semiconductor modules 100 and 200 at a predetermined temperature (usually the maximum use temperature), and The expansion amounts in the thickness direction of the modules 100 and 200 may be matched. In any case, this makes it possible to solve the thermal stress problem, which is a major problem in the clamping type semiconductor module fixing method of the present configuration, to a practicable level.
[0095]
Embodiment 6
Another embodiment will be described below with reference to FIG.
[0096]
In this embodiment, the fixing member 112 has a curved elastic deformation portion 1123 in which the beam portion 1121 has a particularly large elastic modulus in the thickness direction of the semiconductor module 100. In this manner, the thermal stress caused by the difference in the thermal expansion coefficient between the semiconductor module 100 and the leg portion 1122 in the thickness direction of the semiconductor module 100 can be significantly reduced.
[0097]
Embodiment 7
Another embodiment will be described below with reference to FIG.
[0098]
In this embodiment, the heat sink 110 has a pair of side walls 111 projecting from both sides of the semiconductor module 100, and the fixing member 112 is formed of a thin metal plate, and both ends are fixed to the side walls by screws 113 made of resin. I have.
[0099]
According to this configuration, since the fixing member 112 can be easily elastically deformed in the thickness direction of the semiconductor module 100, the above-mentioned thermal stress can be favorably absorbed. Since the heat radiating distance between the metal heat radiating plate and the heat sink 110 is shortened, it is possible to suppress a decrease in the heat radiating property despite the thinning of the fixing member 112.
[0100]
Embodiment 8
Another embodiment will be described below with reference to FIG.
[0101]
In this embodiment, the metal heat radiating plate 106 on the side opposite to the heat sink of the semiconductor module 100 has an uneven portion 1061, which is fitted with the uneven portion 11211 of the beam 1121 of the fixing member 112. The metal heat sink (not shown) on the heat sink side of the semiconductor module 100 and the leg 1122 of the fixing member 112 are in close contact with the heat sink 110 through an electrically insulating insulating heat conductive member. The screw 113 is made of resin. The side surface of the concave / convex portion is a tapered surface for easy fitting and positioning. Thereby, the positioning of the fixing member 112 with respect to the semiconductor module 100 becomes easy, the lateral displacement of the semiconductor module 100 can be prevented, and the thermal resistance between the semiconductor module 100 and the fixing member 112 can be reduced. The fixing member 112 can also serve as a terminal of the metal heat sink 106 on the side opposite to the heat sink of the semiconductor module 100.
[0102]
Note that this uneven fitting structure can also be used for contact between the metal heat sink on the heat sink side of the semiconductor module 100 and the heat sink 110. However, in this case, the metal heat sink on the heat sink side of the semiconductor module 100 is preferably set to the same potential as the heat sink (usually a ground potential).
[0103]
Embodiment 9
Another embodiment will be described below with reference to FIG.
[0104]
In this embodiment, the heat sink 110 is provided with a stopper 1101 that contacts the resin mold portion 109 of the semiconductor module 100 and regulates the lateral displacement of the semiconductor module 100. Thereby, even in a high vibration environment such as an electric vehicle, the semiconductor module does not laterally shift with respect to the heat sink or the urging holding member, and the reliability can be improved. Further, since the side surface of the stopper 1101 is a tapered surface (slope surface), the positioning of the semiconductor module 100 becomes easy.
[0105]
(Modification)
In the above-described modification, the stopper is provided on the heat sink 110, but a stopper may be provided on the fixing member 112 to prevent the semiconductor module 100 from laterally shifting. In this case, the positioning of the semiconductor module 100 becomes easy by making the side surface of the stopper a tapered surface (inclined surface).
[0106]
Embodiment 10
Another embodiment of the inverter device of the present invention will be described with reference to FIGS. FIG. 13 is a partial plan view of the U-phase portion, and FIG. 14 is a side view as viewed from A in FIG.
[0107]
The heat sink 110 is made of a water-cooled metal plate having a cooling channel formed therein, and is formed by, for example, a die casting method. 100 is a card type semiconductor module. The structure of the card type semiconductor module 100 is as described in the first embodiment.
[0108]
The card-type semiconductor module (also referred to as a semiconductor module) 100 is detachably fixed by fastening a screw 113 from above a fixing member (biasing holding member) 112. The semiconductor module 100 is pressed against the upper surface of the heat sink 110. The semiconductor module 200 of the lower arm is a semiconductor module having exactly the same configuration as the semiconductor module 100. In FIG. 13, the semiconductor module 200 is rotated 180 degrees horizontally with respect to the semiconductor module 100, and is pressed against the heat sink 110 similarly to the semiconductor module 100. Fixed to.
[0109]
The smoothing capacitor 28 is fixed on the heat sink 110 adjacent to the semiconductor modules 100 and 200 such that the bottom surface thereof is in contact with the heat sink 110. 111+ is a positive DC input bus bar, and 111- is a negative DC input bus bar. The DC input terminals 101 and 202 of the semiconductor modules 100 and 200 are connected to the positive and negative electrodes of the smoothing capacitor 28, respectively. Reference numeral 1111 denotes an insulator sandwiching the positive and negative DC input bus bars 111+ and 111- for electrical insulation. Reference numeral 121 denotes a U-phase AC output bus bar, which connects the three-phase AC motor 29 to the AC output terminals 102 and 201 of the semiconductor modules 100 and 200. The V-phase and the W-phase are the same as the U-phase, and the description is omitted.
[0110]
Although not shown here, the controller 30 is disposed above the semiconductor module substantially in parallel with the heat sink, and is connected to the signal electrodes 108 and 208 of each semiconductor module.
[0111]
A contact surface 115 between the semiconductor modules 100 and 200 and the heat sink 110 and a contact surface 116 between the semiconductor modules 100 and 200 and the biasing holding member 112 sandwich a member having good thermal conductivity and electrical insulation, for example, a silicon-based heat dissipation sheet. In. In addition, a member having good thermal conductivity, for example, a silicon-based heat dissipation sheet, grease, or the like is also sandwiched between the contact surface 117 between the bias holding member 112 and the heat sink 110. If the urging holding member is an insulating member such as a resin having good heat conductivity, the heat conducting member sandwiched between the contact surfaces 116 does not need to have electrical insulation. Similarly, a member having good thermal conductivity may be interposed between the bottom surface of the capacitor and the contact surface of the heat sink.
[0112]
Although only the U-phase is shown in FIG. 13, the three-phase inverter can be easily configured by juxtaposing the V-phase and the W-phase with the same configuration beside the figure.
[0113]
Other configurations are the same as those of the first embodiment. According to this embodiment, the following effects can be obtained.
[0114]
First, the semiconductor modules 100 to 600 are mounted on the heat sink 110 in such a manner that, of the two main surfaces of the semiconductor modules 100 to 600, the main surface on the drain region side having low thermal resistance is pressed toward the heat sink 110 having high cooling performance. Therefore, the heat dissipation is improved, and the cooling performance of the semiconductor element can be further improved.
[0115]
Next, as shown in FIGS. 2 and 13, the drain electrode terminal (positive DC power supply terminal) 101 of the semiconductor module 100 is connected to its source electrode terminal (AC output terminal) 102 in a diagonal direction of two parallel sides of a rectangle. And the signal terminal 108 is one of a pair of other halves in the diagonal direction of the two parallel sides (the other half of the side on the drain electrode terminal 101 side in FIG. 2). , The switching elements of the six arms of the three-phase inverter can be reasonably arranged with high density using one type of card module, and the inverter can be made compact.
[0116]
More specifically, referring to FIG. 13, the semiconductor module 100 of the upper arm and the semiconductor module 200 of the lower arm of the U-phase It can be realized if it is adjacent to the module 100. In a pair of parallel long sides facing each other of the pair of semiconductor modules 100 and 200, the terminals 102 protrude from the semiconductor module 100 in the lower half in FIG. 13 and the terminals 202 protrude from the semiconductor module 200 in the upper half in FIG. ing. These are source electrode terminals. Since the terminals 102 and 202 do not overlap, the distance between the semiconductor modules 100 and 200 can be reduced, and high-density mounting can be achieved. The same applies to a pair of semiconductor modules 300 and 400 and a pair of 500 and 600 in other phases.
[0117]
Further, since the positive DC input bus bar 111+ and the negative DC input bus bar 111- can be overlapped and extended to the positive DC power terminal 101 and the negative DC power terminal 202 of the semiconductor module 100, both bus bars can be extended. The wiring inductance between 111+ and 111- can be reduced by the mutual induction effect. As a result, the surge voltage superimposed on the bus bars 111+, 111- according to the switching of the semiconductor elements 22, 23 can be reduced.
[0118]
Next, in this embodiment, a water-cooled cooling channel 150 is provided inside the heat sink 110 as shown in FIG. Reference numeral 120 denotes a silicon-based good heat conductive member having high electric insulation. At the tip of the leg 1122 of the urging holding member 112, a columnar projection 1123 is provided so as to project therefrom. ing.
[0119]
By increasing the length of the tip of the projection 1123 projecting into the water-cooled cooling channel 150, the cooling water in the water-cooled cooling channel 150 can cool the projection 1123 satisfactorily. As a result, the thermal resistance between the heat sink 110 and the bias holding member 112 can be reduced. Further, the screw 113 can be omitted. However, in this case the mechanically removable feature is lost.
[0120]
As shown in FIG. 16, the tip of the protrusion 1123 may be set to a length that does not protrude into the water-cooled cooling channel 150. In this case, although the thermal resistance between the heat sink 110 and the urging holding member 112 is slightly increased as compared with FIG. 5, there is an advantage that the possibility that the cooling water leaks from the gap of the press-fitting portion can be eliminated. In addition, a cooling water passage communicating between the protrusions 1123 on both sides of the bias holding member 112 may be provided in the bias holding member 112. By doing so, the cooling water can flow on both sides of the semiconductor module 100, and an excellent cooling effect can be realized.
[Brief description of the drawings]
FIG. 1 is a circuit diagram of a three-phase inverter circuit device for driving motor drive control of an electric vehicle to which a power semiconductor device of the present invention is applied.
FIG. 2A is an exploded perspective view of the semiconductor module shown in FIG. FIG. 2B is a perspective view of the semiconductor module shown in FIG.
FIG. 3 is a perspective view of the semiconductor module shown in FIG. 1;
FIG. 4 is a plan view of a main part of the inverter circuit device shown in FIG. 1;
FIG. 5 is a side view of the inverter circuit device shown in FIG.
FIG. 6 is a side view showing a clamping and fixing structure of the semiconductor module shown in FIG. 1;
FIG. 7 is a side view showing a semiconductor module clamping and fixing structure according to a third embodiment as another embodiment of the present invention.
FIG. 8 is a side view showing a semiconductor module clamping and fixing structure according to a fourth embodiment as another embodiment of the present invention.
FIG. 9 is a side view showing a semiconductor module clamping and fixing structure of Embodiment 6 as another embodiment of the present invention.
FIG. 10 is a side view showing a semiconductor module clamping and fixing structure according to a seventh embodiment as another embodiment of the present invention.
FIG. 11 is a side view showing a semiconductor module clamping and fixing structure according to Embodiment 8 as another embodiment of the present invention.
FIG. 12 is a side view showing a part of a semiconductor module clamping and fixing structure according to a ninth embodiment as another embodiment of the present invention.
FIG. 13 is a plan view of a main part of an inverter circuit device according to Embodiment 10 as another embodiment of the present invention.
14 is a side view of the inverter circuit device shown in FIG.
FIG. 15 is a side view showing the clamping and fixing structure of the semiconductor module shown in FIG. 13;
FIG. 16 is a side view showing a modification of FIG.
[Explanation of symbols]
100 semiconductor module
110 heat sink
112 Fixing member (biasing holding member)
200 Semiconductor Module

Claims (18)

A semiconductor module in which a metal heat sink is disposed on both sides of the power semiconductor element chip,
A heat sink disposed in contact with the metal heat sink of the semiconductor module;
Good heat that urges the metal heat sink on the heat sink side of the semiconductor module to press the metal heat sink on the heat sink side of the semiconductor module against the surface of the heat sink and absorbs heat from the metal heat sink on the anti heat sink side A conductive bias holding member;
With
The power semiconductor device according to claim 1, wherein the urging holding member includes a beam for urging and pressing the semiconductor module, and at least a pair of legs protruding from both ends of the beam toward a heat sink. The power semiconductor device according to claim 1,
The thermal expansion coefficient of a portion of the leg portion of the urging holding member equal to the thickness of the semiconductor module is equal to the average heat of the metal radiating plate and the power semiconductor element chip on both sides of the power semiconductor element chip. A power semiconductor device, wherein the expansion coefficient matches within a predetermined error range. The power semiconductor device according to claim 1, wherein
A power semiconductor device comprising: a soft heat transfer member having a soft and good thermal conductivity interposed between the urging holding member and the heat sink. The power semiconductor device according to any one of claims 1 to 3,
A power semiconductor device comprising a thin insulating member provided between the urging holding member and the heat sink. The power semiconductor device according to any one of claims 1 to 4,
A thin insulating member interposed between the metal heat sink on the anti-heat sink side of the semiconductor module and the urging holding member, and between the metal heat sink on the heat sink side of the semiconductor module and the heat sink A power semiconductor device comprising: The power semiconductor device according to any one of claims 1 to 5,
The heat sink has a cooling fluid passage therein,
The power semiconductor device, wherein the urging holding member has an internal cooling passage communicating with the cooling fluid passage of the heat sink. The power semiconductor device according to claim 1,
Having a circuit component superimposed on the semiconductor module,
The power holding device, wherein the urging holding member presses the semiconductor module and the circuit component together to the heat sink. The power semiconductor device according to claim 7,
The power semiconductor device according to claim 1, wherein the metal radiator plate on the side opposite to the heat sink of the semiconductor module is in direct contact with a terminal of the circuit component. The power semiconductor device according to claim 7 or 8,
The thermal expansion coefficient of a portion of the leg portion of the urging holding member equal to the total thickness of the semiconductor module and the circuit component is the metal heat dissipation plate on both sides of the power semiconductor element chip, A power semiconductor device, wherein the average thermal expansion coefficient of the semiconductor element chip and the circuit component in the thickness direction matches within a predetermined error range. The power semiconductor device according to claim 7,
A power semiconductor device, wherein a terminal member is interposed between the metal heat radiating plate on a side opposite to the heat sink of the semiconductor module and a terminal of the circuit component. The power semiconductor device according to claim 10,
The semiconductor module constitutes part or all of an inverter circuit,
The circuit components include a smoothing capacitor connected in parallel between the positive and negative DC terminals of the inverter circuit,
The power semiconductor device, wherein the terminal member comprises a bus bar for connecting a DC power supply. The power semiconductor device according to claim 10 or 11,
Among the legs of the urging holding member, the thermal expansion coefficient of a portion equal to the total thickness of the semiconductor module, the terminal member, and the circuit component is the metal heat dissipation plate on both sides of the power semiconductor element chip, A power semiconductor device, wherein an average coefficient of thermal expansion of the power semiconductor element chip, the terminal member, and the circuit component in the thickness direction matches within a predetermined error range. The power semiconductor device according to claim 1,
The power semiconductor device according to claim 1, wherein the urging holding member collectively urges and holds a plurality of the semiconductor modules arranged close to each other. The power semiconductor device according to claim 1,
The leg of the biasing holding member has a curved shape, and a modulus of elasticity in a thickness direction of the semiconductor module is greater than a modulus of elasticity of a material of the biasing holding member. Semiconductor device. A semiconductor module in which a metal heat sink is disposed on both sides of the power semiconductor element chip,
A heat sink disposed in contact with the metal heat sink of the semiconductor module;
Good heat that urges the metal heat sink on the heat sink side of the semiconductor module to press the metal heat sink on the heat sink side of the semiconductor module against the surface of the heat sink and absorbs heat from the metal heat sink on the anti heat sink side A conductive bias holding member;
With
The heat sink has side walls protruding adjacent to both sides of the semiconductor module, and the biasing holding member is formed of a thin metal plate and both ends are fixed to the side walls. Power semiconductor device . A semiconductor module in which a metal heat sink is disposed on both sides of the power semiconductor element chip,
A heat sink disposed in contact with the metal heat sink of the semiconductor module;
Good heat that urges the metal heat sink on the heat sink side of the semiconductor module to press the metal heat sink on the heat sink side of the semiconductor module against the surface of the heat sink and absorbs heat from the metal heat sink on the anti heat sink side A conductive bias holding member;
With
A pair of the semiconductor modules forming the upper and lower arms of the same phase are arranged adjacently, and the six semiconductor modules have a three-phase inverter circuit forming each arm,
One of a pair of main surfaces of the power semiconductor element chip has a region connected to a first main electrode terminal also serving as the first metal heat sink, and a region connected to a signal terminal, The other of the pair of main surfaces has a region connected to a second main electrode terminal also serving as the second metal heat sink,
The two main electrode terminals individually protrude to the sides of the semiconductor module from the diagonal halves of two parallel sides of the semiconductor module, and the signal terminals are diagonal to each other on the two sides. A power semiconductor device protruding from one of the other half to the side of the semiconductor module. A semiconductor module in which a metal heat sink is disposed on both sides of the power semiconductor element chip,
A heat sink disposed in contact with the metal heat sink of the semiconductor module;
Good heat that urges the metal heat sink on the heat sink side of the semiconductor module to press the metal heat sink on the heat sink side of the semiconductor module against the surface of the heat sink and absorbs heat from the metal heat sink on the anti heat sink side A conductive bias holding member;
With
The power semiconductor device according to claim 1, wherein both ends of the urging holding member are fixed by being pressed into the heat sink. The power semiconductor device according to claim 17 ,
The power semiconductor device according to claim 1, wherein both ends of the urging holding member are exposed to a coolant passage in the heat sink.

Images