JP3512868B2 - Cleaning method - Google Patents
Cleaning methodInfo
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- JP3512868B2 JP3512868B2 JP24860194A JP24860194A JP3512868B2 JP 3512868 B2 JP3512868 B2 JP 3512868B2 JP 24860194 A JP24860194 A JP 24860194A JP 24860194 A JP24860194 A JP 24860194A JP 3512868 B2 JP3512868 B2 JP 3512868B2
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- gas
- pressure
- liquid
- injection
- tank
- Prior art date
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- Cleaning Or Drying Semiconductors (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体ウエハ等の洗浄
対象物の表面に付着している汚染異物を洗浄除去する方
法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for cleaning and removing contaminants adhering to the surface of an object to be cleaned such as a semiconductor wafer.
【０００２】[0002]
【従来の技術】従来、半導体ウエハ面に付着している汚
染異物を除去する洗浄装置として、(a) ２０〜２００kg
/cm2G の高圧水を噴射する高圧水噴射洗浄装置、(b) 純
水等の液に１MHz 付近の高周波を印加して照射するメガ
ソニック洗浄装置、などが広く使用されている。2. Description of the Related Art Conventionally, as a cleaning apparatus for removing contaminants adhering to the surface of a semiconductor wafer, (a) 20 to 200 kg
Widely used are a high-pressure water jet cleaning device that injects high-pressure water of / cm 2 G, and (b) a megasonic cleaning device that applies a high frequency of around 1 MHz to a liquid such as pure water for irradiation.
【０００３】図３は上記(a) の高圧水噴射洗浄装置を用
いて半導体ウエハの洗浄を行うときの状態を示した概略
図である。この装置は、液体を昇圧する高圧ポンプ(11)
と、液体を噴射するノズル(6')と、ウエハ(9')を保持し
かつ回転移動する保持装置(10)とを備えている。高圧ポ
ンプ(11)により２０〜２００kg/cm2G に昇圧された液体
は、液体を噴射するノズル(6')よりウエハ(9')に噴射さ
れてウエハ(9')面上の汚染異物を除去する。FIG. 3 is a schematic view showing a state when a semiconductor wafer is cleaned by using the high pressure water jet cleaning device of the above (a). This device is a high pressure pump (11)
A nozzle (6 ') for ejecting liquid, and a holding device (10) for holding and rotating the wafer (9'). The liquid whose pressure is increased to 20 to 200 kg / cm 2 G by the high-pressure pump (11) is jetted onto the wafer (9 ') from the nozzle (6') for jetting the liquid to remove contaminants on the surface of the wafer (9 '). Remove.
【０００４】図４は上記(b) のメガソニック洗浄装置を
用いて半導体ウエハの洗浄を行うときの概略図である。
この装置は、純水等の液体に１MHz 近くの高周波を印加
するノズル(6")と、ウエハ(9')を保持し回転移動する保
持装置(10)とを備えている。ノズル(6")で１MHz 近くの
高周波を印加された純水等の液体の振動加速力により、
ウエハ(9')上の汚染異物が除去される。FIG. 4 is a schematic view when a semiconductor wafer is cleaned using the megasonic cleaning device of (b).
This device comprises a nozzle (6 ") for applying a high frequency of about 1 MHz to a liquid such as pure water, and a holding device (10) for holding and rotating the wafer (9 '). ), A vibration acceleration force of a liquid such as pure water applied with a high frequency near 1 MHz
The contaminants on the wafer (9 ') are removed.
【０００５】[0005]
【発明が解決しようとする課題】上述の高圧水噴射洗浄
装置においては、まず第一に、微小な汚染異物は除去さ
れにくいという問題点がある。また、表面粒子除去能力
を向上させるために比抵抗の高い純水を１０００rpm で
回転しているウエハ上に１５０kg/cm2G の高圧水として
スプレーするが、その際に２０００Ｖ以上の静電気の発
生が見られる。洗浄対象物であるウエハが帯電すると、
ゲート酸化膜破壊不良を生ずるおそれがある。また装置
面では、高圧水とするために２００kg/cm2G 程度の昇圧
能力を有する高圧ポンプの設置が不可欠であり、洗浄装
置の構成が複雑で大型化するという不利がある。In the above-mentioned high-pressure water jet cleaning device, first of all, there is a problem that minute contaminants are difficult to remove. Further, in order to improve the surface particle removing ability, pure water having a high specific resistance is sprayed as high pressure water of 150 kg / cm 2 G on a wafer rotating at 1000 rpm, but static electricity of 2000 V or more is generated at that time. Can be seen. When the wafer that is the cleaning target is charged,
The gate oxide film may be damaged. In terms of equipment, it is indispensable to install a high-pressure pump having a boosting capacity of about 200 kg / cm 2 G in order to produce high-pressure water, which is disadvantageous in that the configuration of the cleaning device is complicated and large.
【０００６】上述のメガソニック洗浄装置は、静電気の
発生や装置の大型化の問題は有しないものの、微小な汚
染異物は除去されにくいという問題点がある。The above-mentioned megasonic cleaning device does not have the problems of static electricity generation and size increase, but has a problem that it is difficult to remove minute contaminants.
【０００７】本発明は、このような背景下において、静
電気の発生が少なく、装置は小型化でき、微小な汚染異
物に対しても除去能力の高い洗浄方法を提供することを
目的とするものである。Under such circumstances, an object of the present invention is to provide a cleaning method in which a small amount of static electricity is generated, the apparatus can be downsized, and a high removal ability is achieved even for minute contaminants. is there.
【０００８】[0008]
【課題を解決するための手段】本発明の洗浄方法は、液
体供給系統(1) からタンク(2) 内に液体を導入するこ
と、ガス供給系統(3a)から加圧ガス用圧力調整弁(4) を
介して前記タンク(2) 内にガスを供給することにより、
タンク(2) 内の液体を加圧すること、前記タンク(2) 内
の液体を、そのタンク(2) 内に供給されたガスの圧力に
より導出すると共に、液体用バルブ(5) を介して噴射用
ノズル(6) に導くこと、一方、ガス供給系統(3b)からの
ガスを、噴射ガス用圧力調整弁(7) 、ついで噴射用バル
ブ(8) を介して、前記噴射用ノズル(6) に導くこと、そ
して噴射用ノズル(6) 内において、圧力 0.1〜9.9kg/cm
2Gの中低圧に加圧された液体と、圧力 0.1〜9.9kg/cm2G
の中低圧に加圧されたガスとを混合すること、その混合
により得られた気液混合流を、前記噴射用ノズル(6) か
ら洗浄対象物(9) に向けて噴射することにより、その洗
浄対象物(9) の表面に付着している汚染異物を除去する
こと、を特徴とするものである。The cleaning method of the present invention comprises introducing a liquid from the liquid supply system (1) into the tank (2), and applying a pressure control valve for the pressurized gas (3a) from the gas supply system (3a). By supplying gas into the tank (2) via 4),
Pressurizing the liquid in the tank (2), discharging the liquid in the tank (2) by the pressure of the gas supplied in the tank (2) and ejecting it through the liquid valve (5). The gas from the gas supply system (3b) through the injection gas pressure adjusting valve (7) and then the injection valve (8) to the injection nozzle (6). And in the injection nozzle (6) a pressure of 0.1 to 9.9 kg / cm
Liquid pressurized to medium and low pressure of 2 G and pressure of 0.1 to 9.9 kg / cm 2 G
By mixing with a gas pressurized to medium and low pressure, the gas-liquid mixed flow obtained by the mixing is injected from the injection nozzle (6) toward the object to be cleaned (9), It is characterized in that contaminants adhering to the surface of the cleaning object (9) are removed.
【０００９】以下本発明を詳細に説明する。The present invention will be described in detail below.
【００１０】本発明は、気液混合流を洗浄対象物(9) に
向けて噴射することにより、その洗浄対象物(9) の表面
に付着している汚染異物を除去するものである。洗浄対
象物(9) の代表例は半導体ウエハである。洗浄対象物
(9) としては、そのほか、液晶表示素子用のガラス基
板、ハードデスク用基板などもあげられる。The present invention is intended to remove contaminants adhering to the surface of the object to be cleaned (9) by injecting the gas-liquid mixed flow toward the object to be cleaned (9). A typical example of the cleaning object (9) is a semiconductor wafer. Cleaning object
Other examples of (9) include glass substrates for liquid crystal display devices and substrates for hard desks.
【００１１】本発明においては、まず液体供給系統(1)
からタンク(2) 内に液体を導入する。洗浄対象物(9) が
半導体ウエハである場合は、液体としては主に純水（超
純水）を使用するが、その際にＣＯ2 等の極性ガスを混
入して比抵抗を小さくし、帯電防止を図ることもでき
る。In the present invention, first, the liquid supply system (1)
Introduce the liquid into the tank (2). When the object to be cleaned (9) is a semiconductor wafer, pure water (ultra pure water) is mainly used as the liquid. At that time, polar gas such as CO 2 is mixed to reduce the specific resistance. It can also be antistatic.
【００１２】タンク(2) 内の液体を加圧するため、ガス
供給系統(3a)からは加圧ガス用圧力調整弁(4) を介して
上記のタンク(2) 内にガスを供給する。In order to pressurize the liquid in the tank (2), gas is supplied from the gas supply system (3a) into the tank (2) through the pressure adjusting valve (4) for pressurized gas.
【００１３】そしてタンク(2) 内の液体を、そのタンク
(2) 内に供給されたガスの圧力により導出すると共に、
液体用バルブ(5) を介して噴射用ノズル(6) に導く。Then, the liquid in the tank (2) is stored in the tank.
(2) Derived by the pressure of the gas supplied inside,
It leads to the injection nozzle (6) via the liquid valve (5).
【００１４】このときのガスとしては、無塵空気、窒素
ガス、炭酸ガスなどが用いられ、これらの混合ガスを用
いることもできる。As the gas at this time, dust-free air, nitrogen gas, carbon dioxide gas or the like is used, and a mixed gas thereof can also be used.
【００１５】一方、ガス供給系統(3b)からのガスを、噴
射ガス用圧力調整弁(7) 、ついで噴射用バルブ(8) を介
して、上記の噴射用ノズル(6) に導く。なおガス供給系
統(3b)は、上記のガス供給系統(3a)と同じ系統であって
も違う系統であってもよい。On the other hand, the gas from the gas supply system (3b) is guided to the above-mentioned injection nozzle (6) through the injection gas pressure adjusting valve (7) and then the injection valve (8). The gas supply system (3b) may be the same system as the gas supply system (3a) or a different system.
【００１６】そして噴射用ノズル(6) 内において、圧力
0.1〜9.9kg/cm2G（好ましくは５〜９kg/cm2G ）の中低
圧に加圧された液体と、圧力 0.1〜9.9kg/cm2G（好まし
くは５〜９kg/cm2G ）の中低圧に加圧されたガスとを混
合する。液体圧またはガス圧が上記範囲から外れるとき
は、洗浄効率、装置の耐圧性などの点で不満足となる。In the injection nozzle (6), pressure is applied.
0.1 to 9.9 kg / cm 2 G (preferably 5 to 9 kg / cm 2 G) medium to low pressure liquid and pressure 0.1 to 9.9 kg / cm 2 G (preferably 5 to 9 kg / cm 2 G) And mixed with gas pressurized to medium and low pressure. When the liquid pressure or the gas pressure is out of the above range, the cleaning efficiency and the pressure resistance of the apparatus are unsatisfactory.
【００１７】上記の混合により得られた気液混合流を、
噴射用ノズル(6) から洗浄対象物(9) に向けて噴射すれ
ば、その洗浄対象物(9) の表面に付着している汚染異物
を効率良く除去することができる。この場合、洗浄対象
物(9) を保持装置(10)上に固定し、保持装置(10)を回転
させながら噴射装置を行うことが望ましい。The gas-liquid mixed flow obtained by the above mixing is
By injecting from the injection nozzle (6) toward the cleaning target (9), it is possible to efficiently remove the contaminants adhering to the surface of the cleaning target (9). In this case, it is desirable to fix the object to be cleaned (9) on the holding device (10) and perform the injection device while rotating the holding device (10).
【００１８】噴射速度は、余りに小さいと洗浄不足とな
るので通常は５０m/sec 以上とする。上限は音速（３３
０m/sec ）までとすることができる。If the jet speed is too small, the cleaning will be insufficient, so the jet speed is usually set to 50 m / sec or more. The upper limit is the speed of sound (33
It can be up to 0 m / sec).
【００１９】噴射時の噴射用ノズル(6) の噴射口から洗
浄対象物(9) までの飛距離は、１０〜１５０mm、殊に１
５〜７０mmの範囲内に設定することが好ましい。洗浄対
象物(9) 面に対する噴射角度は、４５〜９０゜、殊に５
０〜８０゜とすることが好ましい。このような飛距離お
よび角度で噴射を行うことにより、最良の除去効率が得
られる。At the time of injection, the flight distance from the injection port of the injection nozzle (6) to the object to be cleaned (9) is 10 to 150 mm, especially 1
It is preferably set within the range of 5 to 70 mm. The jet angle to the cleaning object (9) surface is 45 to 90 °, especially 5
It is preferably 0 to 80 °. By performing injection with such flight distance and angle, the best removal efficiency can be obtained.
【００２０】[0020]
【作用】従来の高圧水噴射洗浄装置においては、たとえ
ば水圧を２１０kg/cm2G というような高圧にしても噴射
速度は162.40m/sec にしかならない上、連続液体流（川
の水のように連続している液体流）の状態で汚染異物に
衝突するため、洗浄効率が不足し、特に粒径の小さい汚
染異物の除去性能が著しく劣る。In the conventional high-pressure water jet cleaning device, even if the water pressure is high such as 210 kg / cm 2 G, the jet speed is only 162.40 m / sec, and the continuous liquid flow (like river water). Since the contaminants collide with each other in a continuous liquid flow), the cleaning efficiency is insufficient, and the removal performance of contaminants with a particularly small particle size is extremely poor.
【００２１】これに対し本発明の洗浄方法によれば、噴
射用ノズル(6) から液滴状の気液混合流が噴射され、そ
の結果、独立した微小液滴が断続的に汚染異物に衝突
し、汚染異物を効率良くウエハ等の洗浄対象物からはじ
き飛ばすことができる。この場合、噴射速度を通常は５
０ m/sec 以上、上限は音速（３３０ m/sec ）までとする
ことができるので、噴射速度を音速またはそれに近い速
度に設定して微小液滴が汚染異物に高速で衝突するよう
にすれば、粒径の大きい汚染異物はもとより粒径の小さ
い汚染異物であっても効率良くウエハ等の洗浄対象物か
らはじき飛ばすことができる。On the other hand, according to the cleaning method of the present invention, a droplet-shaped gas-liquid mixed flow is jetted from the jet nozzle (6), and as a result, independent fine droplets collide intermittently with contaminants.
However, contaminants can be efficiently repelled from cleaning objects such as wafers.
Can be blown away. In this case, the injection speed is usually 5
0 m / sec or more, upper limit is sound velocity (330 m / sec )
Therefore, if the jet speed is set to a sonic speed or a speed close to it so that the minute droplets collide with the contaminants at high speed, the contaminants having a large particle size as well as the contaminants having a small particle size will be detected. Can be efficiently repelled from a cleaning object such as a wafer.
【００２２】[0022]
【実施例】次に実施例をあげて本発明をさらに説明す
る。EXAMPLES The present invention will be further described with reference to examples.
【００２３】実施例１
図１は本発明の洗浄方法を示した説明図である。図２は
ポリスチレンラテックス標準粒子の粒径と除去率との関
係を示したグラフである。Example 1 FIG. 1 is an explanatory view showing a cleaning method of the present invention. FIG. 2 is a graph showing the relationship between the particle size of polystyrene latex standard particles and the removal rate.
【００２４】〈洗浄装置および洗浄操作〉図１におい
て、タンク(2) 内には、液体供給系統(1) から液体の一
例としての超純水が貯蔵されている。<Cleaning Device and Cleaning Operation> In FIG. 1, the tank (2) stores ultrapure water as an example of liquid from the liquid supply system (1).
【００２５】ガス供給系統(3a)からは、加圧ガス用圧力
調整弁(4) を介して上記のタンク(2) 内にガスの一例と
しての乾燥空気が供給され、加圧ガス用圧力調整弁(4)
の調整によりタンク(2) 内の超純水に7.0kg/cm2Gの背圧
を加えている。Dry air as an example of gas is supplied from the gas supply system (3a) into the tank (2) through the pressure adjusting valve for pressurized gas (4), and the pressure adjustment for pressurized gas is performed. Valve (4)
By adjusting the above, a back pressure of 7.0 kg / cm 2 G is applied to the ultrapure water in the tank (2).
【００２６】そしてタンク(2) 内の超純水は、上記のガ
スの圧力により導出され、液体用バルブ(5) を介して
2.1リットル/minの流量で噴射用ノズル(6) に導かれて
いる。The ultrapure water in the tank (2) is led out by the pressure of the above-mentioned gas and is passed through the liquid valve (5).
It is led to the injection nozzle (6) at a flow rate of 2.1 l / min.
【００２７】一方、上記のガス供給系統(3b)からの乾燥
空気は、噴射ガス用圧力調整弁(7)で圧力を7.5kg/cm2G
に調整され、ついで噴射用バルブ(8) を介して２９７Nl
/minの流量で上記の噴射用ノズル(6) に導かれている。On the other hand, the dry air from the gas supply system (3b) is adjusted to a pressure of 7.5 kg / cm 2 G by the pressure adjusting valve (7) for the injection gas.
Adjusted to 297 Nl via the injection valve (8).
It is led to the above injection nozzle (6) at a flow rate of / min.
【００２８】噴射用ノズル(6) に供給された超純水は、
ここで乾燥空気と混合されて液滴状の超純水となり、気
液混合流として３３０m/sec の噴射速度で洗浄対象物
(9) の一例としてのウエハに向けて噴射され、ウエハ面
上の汚染異物を除去する。The ultrapure water supplied to the jet nozzle (6) is
Here, it is mixed with dry air to form ultrapure water in the form of liquid droplets, which is a gas-liquid mixed flow with an injection speed of 330 m / sec.
(9) It is jetted toward the wafer as an example to remove contaminants on the wafer surface.
【００２９】なおウエハは保持装置(10)で保持されてお
り、その保持装置(10)でウエハを回転移動することによ
り、ウエハの表面全面が洗浄される。The wafer is held by the holding device (10), and the whole surface of the wafer is cleaned by rotating the wafer by the holding device (10).
【００３０】洗浄対象物(9) であるウエハに対する噴射
用ノズル(6) の角度は６０゜に設定され、噴射用ノズル
(6) の噴射口からウエハまでの飛距離は５０mmに設定さ
れている。The angle of the spray nozzle (6) with respect to the wafer to be cleaned (9) is set to 60 °.
The flight distance from the injection port of (6) to the wafer is set to 50 mm.
【００３１】〈汚染異物除去例〉ウエハ面上にポリスチ
レンラテックス標準粒子を３０００〜１００００個付着
させ、ついでウエハを１２０℃で１分間加熱して、ポリ
スチレンラテックス標準粒子の付着力を強めたサンプル
ウエハを用意した。<Example of Removal of Contaminating Foreign Substances> 3000 to 10000 polystyrene latex standard particles are adhered on the wafer surface, and then the wafer is heated at 120 ° C. for 1 minute to prepare a sample wafer in which the adhesive force of the polystyrene latex standard particles is strengthened. I prepared.
【００３２】このサンプルウエハを上記の装置を用いて
上記の条件で洗浄操作を行い、ポリスチレンラテックス
標準粒子の粒径別の除去性能を調べた。結果を表１およ
び図２に示す。This sample wafer was washed using the above apparatus under the above conditions to examine the removal performance of polystyrene latex standard particles for each particle size. The results are shown in Table 1 and FIG.
【００３３】比較例１〜２
従来の高圧水洗浄装置（比較例１）および従来のメガソ
ニック洗浄装置（比較例２）を用いて、上記と同じサン
プルウエハに対する洗浄操作を行った。結果を表１およ
び図２に併せて示す。Comparative Examples 1-2 Using the conventional high-pressure water cleaning apparatus (Comparative Example 1) and the conventional megasonic cleaning apparatus (Comparative Example 2), the same cleaning operation was performed on the sample wafer as described above. The results are also shown in Table 1 and FIG.
【００３４】[0034]
【表１】 ポリスチレンラテッ 除 去 率 クス標準粒子の粒径 実施例１ 比較例１ 比較例２ 5.154μm 99.6 % 99.5 % 99.2 % 2.950μm 98.5 % 61.4 % 45.0 % 1.696μm 97.9 % 2.0 % 6.4 % 0.953μm 58.1 % 0.3 % - 0.506μm 0.1 % 0.1 % 0.1 % [Table 1] Particle size of polystyrene latte removal rate standard particles Example 1 Comparative Example 1 Comparative Example 2 5.154 μm 99.6% 99.5% 99.2% 2.950 μm 98.5% 61.4% 45.0% 1.696 μm 97.9% 2.0% 6.4% 0.953 μm 58.1% 0.3% -0.506 μm 0.1% 0.1% 0.1%
【００３５】表１および図２から、実施例１において
は、粒径が 1.696μm というような微小のポリスチレン
ラテックス標準粒子であっても１００％に近い除去率が
得られること、これに対し従来の高圧水洗浄装置を用い
た比較例１や従来のメガソニック洗浄装置を用いた比較
例２にあっては、微小粒径の汚染異物は除去しがたいこ
とがわかる。From Table 1 and FIG. 2, in Example 1, even a fine polystyrene latex standard particle having a particle size of 1.696 μm, a removal rate close to 100% can be obtained. In Comparative Example 1 using the high-pressure water cleaning apparatus and Comparative Example 2 using the conventional megasonic cleaning apparatus, it is understood that it is difficult to remove contaminants having a minute particle size.
【００３６】[0036]
【発明の効果】本発明の洗浄方法によれば、噴射用ノズ
ルから液滴状の気液混合流が噴射され、その結果、独立
した微小液滴が断続的に汚染異物に衝突し、汚染異物を
効率良くウエハ等の洗浄対象物からはじき飛ばすことが
できる。この場合、噴射速度を通常は５０ m/sec 以上、
上限は音速（３３０ m/sec ）までとすることができるの
で、噴射速度を音速またはそれに近い速度に設定して微
小液滴が汚染異物に高速で衝突するようにすれば、粒径
の大きい汚染異物はもとより粒径の小さい汚染異物であ
っても効率良くウエハ等の洗浄対象物からはじき飛ばす
ことができる。また本発明においては、静電気の発生が
少なく、装置も小型化することができるという利点もあ
る。According to the cleaning method of the present invention, a droplet-shaped gas-liquid mixed flow is jetted from the jet nozzle, and as a result, independent fine droplets intermittently collide with the contaminated foreign matter, and the contaminated foreign matter is contaminated. To
Can be efficiently repelled from cleaning objects such as wafers.
it can. In this case, the injection speed is usually 50 m / sec or more,
The upper limit can be up to the speed of sound (330 m / sec )
To set the injection speed to a speed of sound or close to
By making the small droplets collide with the contaminants at high speed, it is possible to efficiently repel contaminants having a large particle size as well as contaminants having a small particle size from an object to be cleaned such as a wafer. Further, in the present invention, there is an advantage that static electricity is less generated and the device can be downsized.
【図１】本発明の洗浄方法を示した説明図である。FIG. 1 is an explanatory view showing a cleaning method of the present invention.
【図２】ポリスチレンラテックス標準粒子の粒径と除去
率との関係を示したグラフである。FIG. 2 is a graph showing the relationship between the particle size of polystyrene latex standard particles and the removal rate.
【図３】従来の高圧水噴射洗浄装置を用いて半導体ウエ
ハの洗浄を行うときの状態を示した概略図である。FIG. 3 is a schematic view showing a state when a semiconductor wafer is cleaned using a conventional high-pressure water jet cleaning device.
【図４】従来のメガソニック洗浄装置を用いて半導体ウ
エハの洗浄を行うときの概略図である。FIG. 4 is a schematic diagram when a semiconductor wafer is cleaned using a conventional megasonic cleaning device.
(1) …液体供給系統、 (2) …タンク、 (3a), (3b)…ガス供給系統、 (4) …加圧ガス用圧力調整弁、 (5) …液体用バルブ、 (6) …噴射用ノズル、 (6'), (6")…ノズル、 (7) …噴射ガス用圧力調整弁、 (8) …噴射用バルブ、 (9) …洗浄対象物、 (9')…ウエハ、 (10)…保持装置、 (11)…高圧ポンプ (1)… Liquid supply system, (2)… Tank, (3a), (3b) ... Gas supply system, (4) ... Pressure control valve for pressurized gas, (5) ... Valve for liquid, (6) ... injection nozzle, (6 '), (6 ") ... nozzle, (7) ... Pressure adjusting valve for injection gas, (8)… Injection valve, (9)… Cleaning target, (9 ') ... wafer, (10) ... Holding device, (11)… High-pressure pump
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平６−120132（ＪＰ，Ａ) 特開 平５−87298（ＪＰ，Ａ) 特公 平３−293071（ＪＰ，Ｂ２) 特公 平２−288230（ＪＰ，Ｂ２) 特公 昭55−44780（ＪＰ，Ｂ１) (58)調査した分野(Int.Cl.7，ＤＢ名) B08B 3/02 B05B 7/04 ─────────────────────────────────────────────────── ─── Continuation of the front page (56) References JP-A-6-120132 (JP, A) JP-A-5-87298 (JP, A) JP-B-3-293071 (JP, B2) JP-B-2- 288230 (JP, B2) JP-B-55-44780 (JP, B1) (58) Fields investigated (Int.Cl. 7 , DB name) B08B 3/02 B05B 7/04
Claims (4)
を導入すること、 ガス供給系統(3a)から加圧ガス用圧力調整弁(4) を介し
て前記タンク(2) 内にガスを供給することにより、タン
ク(2) 内の液体を加圧すること、 前記タンク(2) 内の液体を、そのタンク(2) 内に供給さ
れたガスの圧力により導出すると共に、液体用バルブ
(5) を介して噴射用ノズル(6) に導くこと、 一方、ガス供給系統(3b)からのガスを、噴射ガス用圧力
調整弁(7) 、ついで噴射用バルブ(8) を介して、前記噴
射用ノズル(6) に導くこと、 そして噴射用ノズル(6) 内において、圧力 0.1〜9.9kg/
cm2Gの中低圧に加圧された液体と、圧力 0.1〜9.9kg/cm
2Gの中低圧に加圧されたガスとを混合すること、 その混合により得られた気液混合流を、前記噴射用ノズ
ル(6) から洗浄対象物(9) に向けて噴射することによ
り、その洗浄対象物(9) の表面に付着している汚染異物
を除去すること、を特徴とする洗浄方法。1. A liquid is introduced from a liquid supply system (1) into a tank (2), and a gas supply system (3a) is introduced into the tank (2) via a pressure regulating valve (4) for pressurized gas. The gas in the tank (2) is pressurized by supplying gas to the tank (2), and the liquid in the tank (2) is derived by the pressure of the gas supplied in the tank (2) and valve
(5) to the injection nozzle (6), while the gas from the gas supply system (3b) is injected through the injection gas pressure control valve (7) and then the injection valve (8). Guide to the injection nozzle (6), and in the injection nozzle (6), pressure 0.1 ~ 9.9kg /
cm 2 G liquid pressurized to medium and low pressure, pressure 0.1 to 9.9 kg / cm
By mixing 2 G medium and low pressure gas, and by injecting the gas-liquid mixed flow obtained by the mixture toward the cleaning object (9) from the injection nozzle (6). And removing contaminants adhering to the surface of the object to be cleaned (9).
項１記載の洗浄方法。2. The cleaning method according to claim 1, wherein the cleaning object (9) is a semiconductor wafer.
項１記載の洗浄方法。3. The cleaning method according to claim 1, wherein the jet speed is 50 to 330 m / sec.
浄対象物(9) までの飛距離が２０〜１５０mmである請求
項１記載の洗浄方法。4. The cleaning method according to claim 1, wherein the flight distance from the injection port of the injection nozzle (6) to the cleaning object (9) at the time of injection is 20 to 150 mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24860194A JP3512868B2 (en) | 1994-09-17 | 1994-09-17 | Cleaning method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24860194A JP3512868B2 (en) | 1994-09-17 | 1994-09-17 | Cleaning method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0889911A JPH0889911A (en) | 1996-04-09 |
| JP3512868B2 true JP3512868B2 (en) | 2004-03-31 |
Family
ID=17180551
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24860194A Expired - Lifetime JP3512868B2 (en) | 1994-09-17 | 1994-09-17 | Cleaning method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3512868B2 (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3315611B2 (en) * | 1996-12-02 | 2002-08-19 | 三菱電機株式会社 | Two-fluid jet nozzle for cleaning, cleaning device, and semiconductor device |
| KR100618690B1 (en) * | 2002-11-19 | 2006-09-05 | 주식회사 하이닉스반도체 | Precursor source reservoir for semiconductor fabrication |
| JP2006066425A (en) * | 2004-08-24 | 2006-03-09 | Nec Electronics Corp | Method of polishing semiconductor substrate |
| JP5025358B2 (en) * | 2007-07-11 | 2012-09-12 | 東日本旅客鉄道株式会社 | Cleaning method and apparatus and cleaning nozzle |
| EP2574389B1 (en) | 2011-09-29 | 2022-09-28 | Alfa Laval Corporate AB | A device comprising a centrifugal separator and a method for cleaning of a gas |
| CN105149298B (en) * | 2015-07-24 | 2019-03-19 | 黎明化工研究设计院有限责任公司 | A kind of visor cleaning system and its application method |
| JP7161415B2 (en) * | 2019-01-21 | 2022-10-26 | 株式会社ディスコ | processing equipment |
| JP7417191B2 (en) * | 2020-01-30 | 2024-01-18 | セイコーエプソン株式会社 | liquid injection device |
-
1994
- 1994-09-17 JP JP24860194A patent/JP3512868B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0889911A (en) | 1996-04-09 |
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