JP3511337B2 - Transparent conductive laminate and method for producing the same - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a transparent conductive laminate and a method for producing the same, and more particularly, to a transparent substrate having at least one surface on which a layer made of an inorganic compound having a high barrier property and mainly indium and tin. The present invention relates to a transparent conductive laminate having excellent heat resistance and moist heat resistance, which is formed by sequentially stacking transparent conductive layers composed of the oxides, and a method for producing the same.

[0002]

2. Description of the Related Art In recent years, optoelectronic-related parts and equipment have been remarkably advanced and prevailed as society is highly informed. Among them, the transparent conductive laminate is used as an electrode of an input device such as a transparent touch panel, as an electrode of a display element such as a liquid crystal display, an electroluminescent display, an electrochromic display, and a window of a photoelectric conversion element such as a solar cell. Widely used for electrodes and electromagnetic shielding films for electromagnetic shielding.

The transparent conductive laminate is usually formed by forming a transparent conductive layer on the surface of a transparent substrate. Examples of the transparent conductive layer include a metal thin film of gold, silver, platinum, palladium, etc., an oxide semiconductor thin film of indium oxide, stannic oxide, zinc oxide, etc., and a multilayer thin film formed by laminating a metal oxide and a metal. The metal thin film has excellent conductivity but poor transparency.
On the other hand, the oxide semiconductor thin film is slightly inferior in conductivity, but is excellent in transparency. Among them, ITO (Indium Tin Oxi
The de) film is widely used because of its characteristics such as excellent conductivity and transparency, and the fact that the electrode pattern can be easily formed by etching. The specific resistance of the ITO film is usually about 5 × 10 ⁻⁵ to 1 × 10 ⁻³ Ω · cm, and the transmittance is generally 80 to 90%.

In the performance evaluation of the transparent conductive laminate, in addition to the specific resistance and the transmittance, the stability of the transparent conductive layer such as heat resistance and wet heat resistance is evaluated. In particular, an ITO film formed at a low temperature is usually unstable, and depending on the substrate, an ITO film of good quality and stable to the environment cannot be obtained, probably due to the effect of degassing from the substrate during film formation. I found a thing. In addition, it is estimated that, depending on the base material, mass transfer such as diffusion between the base material and ITO occurs due to heating. However, the post-treatment after film formation causes a change in film quality and a large change in electrical resistance. I also found that In particular, when a polyarylate film is used as the base material, heat treatment, compared with the case where a polyethylene terephthalate film is used as the base material,
The increase in the electric resistance value after the moist heat treatment is remarkable. Unlike glass, polyarylate film is not broken, is light, has a small birefringence, and is optically isotropic. Therefore, polyarylate film is suitable for use as an electrode substrate for liquid crystal displays and the like for which weight reduction is desired. is there. However, the transparent conductive laminate is
When it is used as a transparent electrode of products such as liquid crystal displays and transparent touch panels, heat treatment and moist heat treatment are included in the process until it is made into a product, so if the performance of the transparent conductive laminate changes at that time, the product may malfunction. Found that there is.

[0005]

As described above, the normal ITO film is formed by the reactive sputtering method by controlling the argon / oxygen partial pressure ratio so that the specific resistance of the ITO film becomes a minimum value. However, it was found that the ITO film is amorphous when it is formed at 180 ° C. or less, particularly at room temperature and is not subjected to post-treatment, and is a film having many structural defects that are unstable to the environment. We have many structural defects,
The mass transfer in the film is easily accelerated by heat, and depending on the base material, mass transfer such as diffusion between the base material and ITO due to the heat treatment after film formation causes a change in film quality and a large change in electrical resistance. It is estimated that it will end up. Also, depending on the base material, there are many structural defects due to contamination of the film forming atmosphere due to degassing from the base material during film formation, and atmospheric gas penetration into the film due to heat treatment or wet heat treatment The present inventors presume that a poor quality ITO film is likely to cause mass transfer between ITO films. When a polyarylate film is used as the base material, these tendencies are particularly remarkable, and the electric resistance change by the post-treatment is larger than that of the polyethylene terephthalate film.

In practice, a transparent conductive laminate is a transparent conductive laminate.
The initial sheet resistance of the electric surface is R₀Heat resistance when (Ω / □)
Is a sheet after being left in the atmosphere at 150 ° C for 2 hours.
Resistance R₁Ratio with (Ω / □), R₁/ R₀Is 1.2 or less
Is desirable. Also, the resistance to humidity and heat is 40 ° C, humidity
Sheet resistance R after left for 100 hours under 90% condition
₂Ratio with (Ω / □), R₂/ R₀Is 1.3 or less
Is desirable.

The present invention has been made in view of the above circumstances, and relates to a transparent conductive laminate having excellent heat resistance and wet heat resistance, and a method for producing the same. When an ITO film is formed using a polyarylate molded product as a substrate to form a transparent conductive laminate, the electric resistance value may change due to heat treatment or wet heat treatment. However, according to the present invention, polyarylate molding is performed. Even if a substrate such as a material whose electric resistance value of the formed transparent conductive layer is changed by heat treatment or wet heat treatment is used, a transparent conductive laminate excellent in heat resistance and wet heat resistance can be obtained. Can be provided.

[0008]

As a result of intensive studies to solve the above problems, the present inventors have found that a transparent inorganic compound having a high barrier property on at least one surface of the transparent substrate (A). By forming an intermediate layer (B) composed of (1) on the base (A) and a transparent conductive layer (C) mainly composed of an oxide of indium and tin on the layer (B). It was found that a transparent electroconductive laminate excellent in heat resistance and moist heat resistance can be obtained even if polyarylate or the like is used as the base material, and further, as the intermediate layer (B),
It was found that when a layer mainly composed of amorphous indium oxide is formed by sputtering in a high-concentration oxygen atmosphere, the heat resistance and wet heat resistance of the transparent conductive laminate are further improved, and the present invention is completed. Arrived

Although the function of the intermediate layer in the present invention is not clear, it is presumed that, between the base material and the ITO film, which is the transparent conductive layer, to obtain a transparent conductive laminate excellent in heat resistance and moist heat resistance. It is presumed that it can serve as a diffusion barrier that prevents degassing from the base material and mass transfer between the base material and the ITO film. At this time, if the intermediate layer is a layer having many structural defects such as small crystallites and many crystal grain boundaries, it cannot serve as a diffusion barrier that prevents degassing and mass transfer from the base material. The high barrier property as referred to in the present invention means the ability to function as a diffusion barrier that prevents degassing from the base material and mass transfer between the base material and the ITO film, which are estimated above. Alternatively, whichever mechanism is used, the intermediate layer having the property of providing a transparent conductive laminate having remarkably excellent heat resistance and wet heat resistance is called high barrier property.

That is, according to the present invention, <1> at least one surface of the transparent substrate (A) is mainly made of indium oxide.
An amorphous intermediate layer (B) made of the above and a transparent conductive layer (C) mainly made of an oxide made of indium and tin are laminated in the order of A / B / C, (I) Intermediate layer (B) is heat treated at 150 ° C for 2 hours
A transparent conductive laminated body characterized by being amorphous afterwards ,
<2> Intermediate layer (B) mainly composed of indium oxide
(II) of oxygen / inert gas with an oxygen concentration of 5-100%
<1> a transparent conductive laminate, characterized by being formed by a sputtering method in the presence of <3>, wherein the transparent substrate (A) is a polyarylate molded product.
<1> The transparent conductive laminate according to <1> , <4> A layer (B) mainly made of amorphous indium oxide is provided on at least one surface of the transparent substrate (A) with an oxygen concentration of 5 to 100% oxygen / non-oxygen. A method for producing a transparent conductive laminate, which is characterized in that the transparent conductive layer is formed by a sputtering method in the presence of an active gas, and then a transparent conductive layer mainly composed of an oxide of indium and tin is formed on the layer. 5> The transparent substrate (A) is a polyarylate molded product.
The present invention relates to the method for producing a transparent conductive laminate of <4> .

[0011]

BEST MODE FOR CARRYING OUT THE INVENTION According to the present invention, as shown in FIG. 1, an intermediate layer 20 made of a transparent inorganic compound having a high barrier property on at least one surface of a transparent substrate 10 is provided on the substrate 10.
And a transparent conductive layer 30 mainly formed of an oxide of indium and tin on the intermediate layer 20.

The transparent substrate used in the present invention may be an inorganic compound molded product such as glass or quartz, or an organic polymer molded product, but the polymer molded product is light and hard to break, and therefore can be more preferably used. . The transparent polymer molded article can be used as long as it is transparent to visible light. Specifically, the types of transparent polymer moldings are polyethylene terephthalate, polyether sulfone, polystyrene, polyethylene-2, polyethylene naphthalate, polyarylate, polyether ether ketone, polycarbonate, polypropylene, polyimide, triacetyl cellulose. , Polymethyl (meth) acrylate and the like. These transparent polymer moldings may be plate-shaped or film-shaped as long as the main surface forming the transparent conductive layer is smooth. When the plate-shaped polymer molded product is used as the substrate, the substrate is excellent in dimensional stability and mechanical strength, so that a transparent conductive laminate excellent in dimensional stability and mechanical strength is obtained, Especially when it is required, it can be preferably used. In addition, the transparent polymer film has flexibility and the transparent conductive layer can be continuously formed by the roll-to-roll method. This can also be preferably used because a laminate can be produced.

In this case, the thickness of the film is usually 10 to 25.
Those having a thickness of 0 μm are used. Film thickness is 10 μm
If it is too thin, it lacks in mechanical strength as a base material,
If it is much thicker than 250 μm, it is not suitable for winding the film in a roll and using it because the flexibility is insufficient.

According to the present invention, a transparent conductive laminate having excellent heat resistance and wet heat resistance at a relatively low temperature can be obtained. Since it can be obtained at a relatively low temperature, its effect can be exhibited when a polymer molded product is used as a substrate. That is, the polymer molded article is usually heated to a temperature of 180
This is because it is as low as ℃ or less. Further, the present invention exerts its effect particularly when a polymer molded product whose electric resistance value is changed by heat treatment or wet heat treatment when a transparent conductive laminate is formed is used as a substrate. Specific examples thereof include polyarylate moldings.

The surface of each of these substrates is previously subjected to a sputtering treatment, a corona treatment, a flame treatment, an etching treatment such as an ultraviolet ray irradiation, an electron beam irradiation or the like, or an undercoating treatment so that the intermediate layer formed on the substrate adheres to the substrate. You may perform the process which improves a property. Further, before forming the intermediate layer, if necessary, a dustproof treatment such as solvent cleaning or ultrasonic cleaning may be performed.

In the present invention, an intermediate layer composed of an inorganic compound layer having a high barrier property is formed on at least one surface of such a substrate, and the intermediate layer is mainly composed of an oxide mainly composed of indium and tin. Transparent conductive layer (I
A TO film) is formed. The thickness of the intermediate layer is 3 to 100 nm
Is preferred. If it is much thinner than 3 nm, it probably has a weak function as a diffusion barrier even if there are few structural defects.
When the thickness is much thicker than 0 nm, there arises a problem such as poor transparency when the transparent conductive laminate is formed. The thickness of the transparent conductive layer is determined according to the conductivity required for the transparent conductive laminate, from its specific resistance and its electrical resistance when the intermediate layer has conductivity, and is not particularly limited. However, usually 5 to 200 nm is preferable.

The intermediate layer consisting of an inorganic compound layer having a high barrier property includes silicon, titanium, zirconium, zinc, tin, indium, tungsten, aluminum,
It is a layer composed of at least one compound of boron or the like, and preferably at least one of oxides, nitrides or carbides thereof, and may be transparent to visible light, preferably indium oxide, tin oxide, silicon oxide. , Titanium oxide, zinc oxide, aluminum oxide, and silicon nitride, and more preferably indium oxide.

For example, the indium oxide film (or the indium oxide layer) is obtained by room temperature film formation by reactive sputtering using indium oxide or indium metal as a target and argon as a sputtering gas and oxygen as a reactive gas. Since the indium oxide film is transparent in the visible light region and is usually a high-resistance semiconductor thin film with a specific resistance of approximately 1 Ω · cm or more, even if a transparent conductive laminate is formed with the indium oxide film as an intermediate layer, transparent conductive film is formed. The transparency and conductivity of the organic laminate do not depend much on the thickness of the indium oxide film. Furthermore, since the amorphous indium oxide film probably has few structural defects such as crystal grain boundaries, it can be suitably used as a diffusion barrier. However, since the indium oxide film is crystallized by heat treatment and grain boundaries are generated, its role as a diffusion barrier is weakened.

Therefore, it is preferable that the indium oxide film is a stable amorphous that does not crystallize. Generally, when forming an indium oxide film by the reactive sputtering method, the argon / oxygen partial pressure ratio is generally controlled to a value that minimizes the specific resistance. Here, the optimum partial pressure ratio of argon gas and oxygen gas changes depending on whether indium metal or indium oxide is used as the target. The amorphous indium oxide film thus obtained by the room temperature film formation is an unstable amorphous film which is easily crystallized by heat treatment. However, for reactive sputtering, the partial pressure ratio of argon / oxygen was increased more than the normal value,
The present inventors have found that when performed in a high-concentration oxygen atmosphere, the obtained indium oxide film is a stable amorphous film that is less likely to be crystallized by heat treatment and has few structural defects such as oxygen defects. It was Therefore, the indium oxide film thus formed has a high barrier property.
Regarding the composition of the indium oxide film, the number of oxygen atoms is about 1.3 to 1.8 times that of one atom of indium.

Amorphous indium oxide containing tin formed by using a target containing tin may be used for the intermediate layer. Although its composition affects the electrical characteristics and permeability, it usually has a tin content of 3 to 3 with respect to indium.
It is about 50% by weight, and the number of oxygen atoms is about 1.3 to 1.8 times that of one atom of indium. Since the oxygen content and the tin content affect the specific resistance of the transparent conductive film, it is preferable to control the amounts during film formation.

In the present invention, as already mentioned,
It is preferable that the layer mainly made of indium oxide formed on the transparent substrate maintains an amorphous structure before and after the heat treatment. For this purpose, the present inventors have found that the indium oxide film may be formed in a high-concentration oxygen atmosphere by the sputtering method.
The high-concentration oxygen atmosphere as referred to in the present invention is an atmosphere in which the partial pressure ratio of argon / oxygen as a sputtering gas is larger than the partial pressure ratio of argon / oxygen at which the resistivity of the indium oxide film is minimum. Yes, the oxygen partial pressure at this time is based on the total pressure, the density of the target and the doping amount of tin,
It varies depending on the film forming speed, etc., and can be easily obtained experimentally, but when indium oxide is used as the target 5-4
It is about 0%, and when indium metal is used for the target, it is about 40 to 80%. By performing reactive sputtering in a high-concentration oxygen atmosphere, a stable amorphous indium oxide film with few oxygen defects can be obtained.

The amorphous indium oxide as referred to in the present invention is an In ₂ O ₃ (222) peak at 2θ = 30 ° to 31 ° and 2θ = 35 in the X-ray diffraction pattern by the θ-2θ method. ° ~ 36 ° In ₂ O ₃ (400)
It means one that does not show a peak.

For example, as a method for forming a layer (intermediate layer) mainly composed of amorphous indium oxide and a transparent conductive film (ITO film) mainly composed of an oxide composed of indium and tin, a vacuum deposition method and a sputtering method are used. Any of the conventionally known physical vapor deposition methods such as the ion plating method can be adopted. Among them, the sputtering method
It can be preferably used because the oxygen content in the film can be easily controlled.

In the sputtering method, for example, indium oxide film is formed by using a target of indium metal,
Alternatively, indium oxide is used, and an indium tin alloy or indium tin oxide is used as a target for forming the ITO film. An inert gas such as argon is used as a sputtering gas, oxygen is used as a reactive gas, a normal pressure: 50 to 1000 mPa, and a substrate temperature during film formation: 20 to
Direct current (DC) or high frequency (R
F) The magnetron sputtering method can be used. In the present invention, it is preferable to control the partial pressure of oxygen gas which is a reactive gas so that an indium oxide film having a stable amorphous structure with few oxygen defects can be obtained. For that purpose, when argon is used as the sputtering gas and oxygen is used as the reactive gas, it is preferable to make the partial pressure ratio of oxygen higher than the partial pressure ratio of argon / oxygen at which the resistivity of the indium oxide film becomes the minimum. The value depends on the density of the target, the tin doping amount, and the film forming rate, and is experimentally obtained. When indium metal is used as the target, the oxygen partial pressure is 30% of the total pressure during sputtering. % To 100%, and about 5% to 100% when indium oxide is used as the target. The argon / oxygen partial pressure ratio in the film formation of the ITO film that becomes the transparent conductive layer varies depending on the density of the target, the composition ratio of indium oxide and tin oxide, the film formation speed, and the like.
It is experimentally required to obtain the required film conductivity, but is about 0.5 to 20% when indium oxide is used as the target, and 30 to 80% when indium metal is used as the target. It is a degree.

Similarly to indium oxide, tin oxide,
Silicon oxide, titanium oxide, zinc oxide, aluminum oxide,
Silicon nitride and the like are also transparent and have a barrier property in the present invention. As a method for forming a film of these inorganic compounds, any of conventionally known physical vapor deposition methods such as a vacuum vapor deposition method, a sputtering method, and an ion plating method can be adopted. For silicon oxide or the like, a plasma CVD method or the like can be adopted.

For the purpose of improving the mechanical strength, a transparent hard coat layer is provided on the surface of the substrate opposite to the surface on which the ITO film is formed, and the electrical resistance, transparency and wet heat resistance are not impaired. To some extent, an optional protective layer may be further provided on the ITO film. For the purpose of improving the adhesion between the substrate and the indium oxide film, or the indium oxide film and the ITO film, or improving the transmittance of the transparent conductive laminate, any metal thin film or metal can be used as long as its performance is not impaired. Second and third intermediate layers such as an oxide film and an organic polymer film may be provided.

The atomic composition of the intermediate layer and the transparent conductive layer formed by the above method can be measured and confirmed by Auger electron spectroscopy (AES), inductively coupled plasma method (ICP), Rutherford backscattering method (RBS) and the like. Further, these film thicknesses can be measured by observation in the depth direction of Auger electron spectroscopy, cross-section observation by a transmission electron microscope, or the like. The electrical characteristics of the laminate can be measured by the 4-terminal method or the like. The crystallinity of the indium oxide film can be determined by an X-ray diffraction method (XRD) or an electron diffraction method.

[0028]

EXAMPLES Next, the present invention will be specifically described with reference to Examples. Example 1 Polyarylate film (thickness: 75 μ
m) on one main surface, an indium oxide sintered body is used as a target and an argon / oxygen mixed gas (total pressure 2) as a sputtering gas.
66 mPa: oxygen partial pressure 26.6 mPa) (high-concentration oxygen atmosphere) was used to form an indium oxide film with a thickness of 30 nm by magnetron DC sputtering method.
The indium oxide / tin oxide sintered body (composition ratio: In ₂ O ₃ : SnO ₂ = 95:
5 wt%) was used as a sputtering gas using an argon / oxygen mixed gas (total pressure of 266 mPa: oxygen partial pressure of 2.7 mPa) to form an ITO film having a thickness of 15 nm by a magnetron DC sputtering method to produce a transparent conductive laminate. did.

[Example 2] A transparent conductive laminate was prepared in the same manner as in Example 1 except that the oxygen partial pressure at the time of forming the indium oxide film was 21.3 mPa of high concentration oxygen referred to in the present invention. [ Comparative Example 1 ] A transparent conductive laminate was prepared in the same manner as in Example 1 except that the oxygen partial pressure during the formation of the indium oxide film was 8.0 mPa.

Example 3 On one main surface of a polyarylate film (thickness: 75 μm), a target indium oxide / tin oxide sintered body (composition ratio: In ₂ O ₃ : SnO ₂ = 80: 20 wt%) was used. )
As the sputter gas, a mixed gas of argon and oxygen (total pressure: 26
6 mPa: oxygen partial pressure 26.6 mPa), thickness 30 nm
Was formed by magnetron DC sputtering, and an ITO film having a thickness of 15 nm was formed on the indium oxide film in the same manner as in Example 1 to prepare a transparent conductive laminate.

Comparative Example 2 A polyarylate film (thickness: 75 μm) having a thickness of 30 nm was formed on one main surface of the polyarylate film by a plasma CVD method using helium gas and oxygen gas in which tetramethyldisiloxane was bubbled as a CVD gas. A silicon oxide film was formed, and an ITO film having a thickness of 15 nm was further formed on the silicon oxide film in the same manner as in Example 1 to produce a transparent conductive laminate.

Comparative Example 3 A transparent conductive laminate was prepared by forming only an ITO film on one main surface of a polyarylate film (thickness: 75 μm) in the same manner as in Example 2. Comparative Example 4 Polyethylene terephthalate film (thickness: 188 μ
Only the ITO film was formed on one main surface of m) in the same manner as in Example 1 to prepare a transparent conductive laminate.

Reference Example 1 A laminated body was prepared by forming only an indium oxide film on one main surface of a polyarylate film (thickness: 75 μm) in the same manner as in Example 1. [ Reference Example 2 ] Reference except that the oxygen partial pressure was 21.3 mPa.
A laminate was prepared in the same manner as in Example 1 . [ Reference Example 3 ] Reference example except that the oxygen partial pressure was set to 8.0 mPa.
A laminate was prepared in the same manner as in 1 .

Examples 1 to 3 produced as described above,
The heat resistance and moist heat resistance of the transparent conductive laminates of Comparative Examples 1 to 4 and the crystallinity before and after heat treatment of Reference Examples 1 to 3 were evaluated by the following methods. 1) Sheet resistance: R ₀ (Ω / □) was measured by the heat-resistant four-terminal method,
The sheet resistance after standing for 2 hours in the atmosphere at 150 ° C .: The ratio with R ₁ (Ω / □), R ₁ / R _0, were used for the determination. That is, when R ₁ / R ₀ is 1.0, the resistance value does not change,
It can be said that the transparent conductive laminate has excellent heat resistance. 2) Sheet resistance: R ₀ (Ω / □) was measured by the moist heat resistant four-terminal method,
The sheet resistance after standing for 100 hours under the conditions of 40 ° C. and 90% humidity was determined by the ratio of R ₂ (Ω / □), R ₂ / R ₀ . That is, it can be said that the transparent conductive laminate has excellent heat resistance and does not change its resistance value when R ₂ / R ₀ is 1.0. 3) X-ray diffraction patterns were taken by the crystalline θ-2θ method before and after heat treatment, and 2θ = 30.
In ₂ O ₃ (222) peak from ° to 31 °, and 2θ =
The crystallinity before and after the heat treatment at 150 ° C. for 2 hours in the atmosphere was determined by the presence or absence of the In ₂ O ₃ (400) peak at 35 ° to 36 °. The above results are shown in [Table 1] to [Table 2].

[0035]

[Table 1]

As is clear from [Table 1], the polyethylene terephthalate film has a small increase in sheet resistance after heat treatment and wet heat treatment, but when an ITO film is formed on the polyarylate film to form a transparent conductive laminate, heat treatment is performed. The sheet resistance increases more than twice after the wet heat treatment. However, when polyarylate is used as the base material, the resistance increase can be suppressed by forming the indium oxide film and the silicon oxide film as the intermediate layer. In particular, the indium oxide film was formed in a high-concentration oxygen atmosphere. In this case, it can be seen that a more practical resistance suppressing effect can be obtained.

[0037]

[Table 2]

As is apparent from [Table 1] and [Table 2],
In particular, when an indium oxide film is formed in a high-concentration oxygen atmosphere, crystallization due to heat treatment does not occur, and heat resistance and moist heat resistance are better than when the oxygen concentration is low. Thus, the transparent conductive laminate obtained by the present invention has excellent heat resistance and wet heat resistance.

[0039]

As described above, in the present invention, the intermediate layer (B) made of a transparent inorganic compound having a high barrier property and the oxide mainly made of indium and tin are provided on at least one surface of the transparent substrate (A). And the transparent conductive layer (C) composed of are laminated in the order of A / B / C,
In particular, even when polyarylate or the like is used as a transparent substrate, it is possible to provide a transparent conductive laminate having excellent heat resistance and moist heat resistance, and the intermediate layer (B) is mainly composed of amorphous indium oxide. When the layer is formed by sputtering in a high-concentration oxygen atmosphere, it is possible to provide a transparent conductive laminate that is further excellent in heat resistance and wet heat resistance of the transparent conductive laminate. INDUSTRIAL APPLICABILITY The transparent conductive laminate of the present invention can be suitably used for transparent electrodes and electromagnetic wave shields of liquid crystal displays, transparent touch panels, electroluminescent surface light emitters, electrochromic display devices and the like.

[Brief description of drawings]

FIG. 1 is a cross-sectional view showing an example of a transparent conductive laminate obtained by the present invention.

[Explanation of symbols]

10 Transparent Substrate 20 Layer Made of Transparent Inorganic Compound Having High Barrier Property 30 Transparent Conductive Layer Mainly Made of Oxide Made of Indium and Tin

─────────────────────────────────────────────────── --Continued from the front page (56) Reference JP-A-6-238808 (JP, A) JP-A-4-206212 (JP, A) JP-A-6-136159 (JP, A) JP-A-2- 265738 (JP, A) (58) Fields surveyed (Int.Cl. ⁷ , DB name) B32B 1/00-35/00 C08J ⁷ /04-7/06 C23C 14/00-15/58 H01B 5/14 -5/16

Claims (5)

(57) [Claims] 1. A transparent substrate (A) on at least one side,
Amorphous intermediate layer (B) mainly composed of indium oxide
And a transparent conductive layer (C) mainly composed of an oxide composed of indium and tin are laminated in the order of A / B / C, and (I) the intermediate layer (B) is 2 at 150 ° C. Heat treatment for hours
A transparent conductive laminated body characterized by being amorphous afterwards . 2. The intermediate layer (B) comprises (II) an oxygen / inert gas having an oxygen concentration of 5 to 100%.
The transparent conductive laminate according to claim 1, which is formed by a sputtering method in the presence of the transparent conductive laminate. 3. The transparent conductive laminate according to claim 1 , wherein the transparent substrate (A) is a polyarylate molded product. 4. A layer (B) mainly composed of amorphous indium oxide is formed on at least one surface of a transparent substrate (A) by oxygen.
It is formed by a sputtering method in the presence of oxygen / inert gas with a concentration of 5 to 100% , and then a transparent conductive layer mainly composed of an oxide of indium and tin is formed on the layer. A method for producing a transparent conductive laminate, comprising: 5. The method for producing a transparent conductive laminate according to claim 4 , wherein the transparent substrate (A) is a polyarylate molded product.