JP3505732B2 - Phase shift mask and exposure method using phase shift mask - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a phase shift mask and an exposure method using the phase shift mask. INDUSTRIAL APPLICABILITY The present invention can be used in various pattern forming techniques and the like, and can be used as, for example, an exposure mask and an exposure method for forming a resist pattern on a wafer with a high yield in the manufacture of semiconductor devices.

[0002]

2. Description of the Related Art The processing size of a pattern in a semiconductor device or the like is becoming finer year by year, and a conventional photomask composed of only a light shielding portion and a light transmitting portion cannot sufficiently resolve a fine pattern. is there. Recently, in place of the conventional photomask, a so-called phase shift mask having a light-transmitting portion that transmits light and a phase-shifting portion that changes the phase of light is a fine mask that cannot be resolved by a conventional mask. It is in the spotlight because it can resolve patterns.

Conventionally, in order to form an isolated pattern represented by a contact hole using a phase shift mask, a phase shift method such as an edge enhancement method, an auxiliary pattern method and a halftone method is often used. The edge enhancement method can be obtained by arranging adjacent patterns having different phases around the light transmitting portion.
The auxiliary pattern method in the related art can be obtained by arranging a pattern having a phase different from that of the light transmitting portion around the light transmitting portion, apart from the light transmitting portion. In the edge enhancement method and the auxiliary pattern method, the light transmittance of the light transmitting portion and the phase shift portion is usually set to 1.0. The halftone method is obtained by providing the light-shielding portion around the light-transmitting portion with some light-transmitting property and making the phase of the transmitted light different.

[0004]

However, the edge enhancement method has the following drawbacks. If the width of the phase shift portion formed between the light transmitting portion and the light shielding area is too narrow,
The amount of light transmitted through the phase shift unit is reduced. As a result, the interference between the light transmitted through the light transmission portion and the light transmitted through the phase shift portion becomes insufficient, and it becomes impossible to obtain a sharp image of the light transmission portion on the wafer. Further, if the width of the phase shift portion formed between the light transmission portion and the light shielding area is too wide, the amount of light transmitted through the phase shift portion will be too large. Therefore, the amount of light transmitted through the light transmission portion and the amount of light transmitted through the phase shift portion become too large. As a result, not only interference between the light transmitted through the light transmission part and the light transmitted through the phase shift part occurs, but also unnecessary light is formed on the wafer by the light transmitted through the phase shift part and not contributing to the interference. To be done. An unnecessary image is formed on the wafer by the light that passes through the phase shift portion and does not contribute to interference. The width of the phase shift portion is wide or narrow because the required registration margin cannot be ensured in the current mass production apparatus such as an electron beam drawing apparatus. as a result,
The width of the phase shift portion cannot be controlled within a desired range, and the transfer pattern shape on the wafer cannot be controlled within a desired range, which is a significant drawback. On the other hand, it is possible to set the width of the phase shift part in a desired range by significantly improving the drawing accuracy of the mass-production drawing device, but in this case, the productivity is significantly reduced and the cost is significantly increased. There is a drawback that

Further, the auxiliary pattern system has the following drawbacks. If the width of the auxiliary pattern phase shift portion is too narrow, the amount of light transmitted through the phase shift portion will decrease. As a result, the interference between the light transmitted through the light transmission portion and the light transmitted through the phase shift portion becomes insufficient, and it becomes impossible to obtain a sharp image of the light transmission portion on the wafer. Further, if the width of the phase shift portion formed between the light transmission portion and the light shielding area is too wide, the amount of light transmitted through the phase shift portion will be too large. Therefore, not only interference between the light transmitted through the light transmission part and the light transmitted through the phase shift part occurs, but also an unnecessary image is formed on the wafer by the light transmitted through the phase shift part and not contributing to the interference. It Further, the width of the auxiliary pattern is generally smaller than 1 μm, and it is necessary to precisely control the line width. For example, in the current mass-production apparatus such as an electron beam drawing apparatus, the width of the auxiliary pattern cannot be controlled within a desired range, and as a result, the transfer pattern shape on the wafer cannot be controlled within the desired range, which is a significant drawback. On the other hand, it is possible to set the width of the auxiliary pattern in a desired range by significantly improving the drawing accuracy of the mass-production drawing device, but in this case, the productivity is remarkably reduced and the cost is remarkably increased. There is a drawback that.

Further, the halftone method has the following drawbacks. The halftone method is obtained by providing the light-shielding portion around the light-transmitting portion with some light-transmitting property and making the phase of the transmitted light different. Therefore, there is a remarkable drawback that the so-called light-shielding band necessary for exposure by the stepper cannot be secured. Further, as a means for providing the light-shielding portion with a slight light-transmitting property, when a light-shielding film made of, for example, chromium is formed by a method such as sputtering, the film thickness is controlled so as to match the transmittance. It is difficult to obtain a film having a uniform film thickness, and the film thickness becomes thin, so that defects in the film increase and exposure itself becomes extremely difficult.

[0007]

SUMMARY OF THE INVENTION It is an object of the present invention to eliminate all the drawbacks of the above auxiliary pattern type, edge enhancing type and halftone type phase shift exposure techniques which have been used independently. That is, a first object of the invention of the present application is to eliminate the difficulty of controlling the registration accuracy in drawing with an electron beam or the like, which is particularly remarkable in the edge enhancement method. The second object is to eliminate the difficulty in controlling the line width of the auxiliary pattern, which is particularly remarkable in the auxiliary pattern method. The third purpose is
Another object of the present invention is to solve the drawback that the light-shielding band required for stepper exposure cannot be formed in the halftone method. A fourth object is to significantly reduce a transmission type defect (a defect that a pinhole or a semi-transmissive part is generated due to the thinning of the light shielding part to form a transmission part) due to the thinning of the light shielding part in the halftone method. To reduce. A fifth object is to further improve the effect obtained by the conventional method, and specifically to provide a phase shift technique capable of improving the resolution in light exposure and obtaining a larger depth of focus. is there.

[0008]

According to a first aspect of the present invention, there is provided a light-shielding region, and a first light-transmitting portion having a width for exposing a photosensitive composition to be exposed to light to form a desired pattern, A second light-transmitting portion formed between the first light-transmitting portion and the light-shielding region, wherein the light transmittance of the second light-transmitting portion is greater than 0 and the exposed photosensitive composition is not exposed. To a part of the phase shift portion which is a second light transmission portion and is small in size, and the phase of the second light transmission portion is different from that of the first light transmission portion. A third light transmitting portion having the same phase as that of the first light transmitting portion, and the light transmittance of the third portion is equal to the light transmittance of the first light transmitting portion;
Further, the third portion forms an auxiliary pattern having a width smaller than that of the first light transmitting portion, and the light transmitted through the third portion is
Is the light transmitted through the phase shift portion, which is the second light transmitting portion.
A phase shift mask which is characterized by interfering with each other, thereby achieving the above object.
In the present specification, the “phase shift portion” refers to a portion that transmits exposure light with a phase different from that of the focused portion, as referred to for the first light transmitting portion.
It is defined by the relative relationship with the part of interest.
Is not necessarily made of a special phase shifting material.
It doesn't have to be.

According to a second aspect of the present invention, there is provided a light-shielding region, a first light-transmitting portion having a width for exposing the exposed photosensitive composition to form a desired pattern, and the first light-transmitting portion. And a second light transmission part formed between the light shielding region and
The light transmittance of the second light transmitting portion is larger than 0 and small enough not to expose the exposed photosensitive composition, and the phase of the second light transmitting portion is different from the phase of the first light transmitting portion. A phase shift portion, further comprising a third portion having a phase equal to that of the first light transmission portion in a part of the phase shift portion which is the second light transmission portion, and the light of the third portion The auxiliary pattern has a transmittance equal to that of the second light transmitting portion, and the third portion has a width smaller than that of the first light transmitting portion.
And the light transmitted through the third portion is the second light transmitting portion.
The phase shift mask is characterized by interfering with the light transmitted through the phase shift part , which achieves the above object.

According to a third aspect of the present invention, there is provided a light-shielding region, a first light-transmitting portion having a width for exposing the exposed photosensitive composition to form a desired pattern, and the first light-transmitting portion. And a second light transmission part formed between the light shielding region and
The light transmittance of the second light transmitting portion is larger than 0 and small enough not to expose the exposed photosensitive composition, and the phase of the second light transmitting portion is different from the phase of the first light transmitting portion. A phase shift portion, further comprising a third portion having a phase equal to that of the first light transmission portion in a part of the phase shift portion which is the second light transmission portion, and the light of the third portion The transmittance is higher than the light transmittance of the second light transmitting portion and lower than that of the first light transmitting portion, and the third portion has an auxiliary width smaller than the width of the first light transmitting portion. Forming a pattern and the third part
The light that has passed through the minute part is the phase shift part that is the second light transmitting part.
A phase shift mask, which is characterized by interfering with light transmitted through, and thereby achieves the above object.

According to a fourth aspect of the invention, there is provided a light-shielding region, a first light-transmitting portion having a width for exposing the exposed photosensitive composition to form a desired pattern, and the first light-transmitting portion. And a second light transmission part formed between the light shielding region and
The light transmittance of the second light transmitting portion is larger than 0 and small enough not to expose the exposed photosensitive composition, and the phase of the second light transmitting portion is different from the phase of the first light transmitting portion. A phase shift portion, further comprising a third portion having a phase equal to that of the first light transmission portion in a part of the phase shift portion which is the second light transmission portion, and the light of the third portion The transmittance is set to a desired amount by controlling the light transmittance of a corresponding portion of the substrate, and the third portion has an auxiliary pattern having a width smaller than the width of the first light transmitting portion. To
None and the light transmitted through the third portion is the second light transmitting portion.
A phase shift mask, which is characterized by interfering with light transmitted through a certain phase shift portion , thereby achieving the above object. The invention of claim 5 is
The light-shielding region and the exposed photosensitive composition are exposed to light to obtain a desired
First light transmitting portion having a width for forming a pattern
And a first light transmitting portion formed between the first light transmitting portion and the light shielding region.
And a light transmittance of the second light transmitting portion.
Greater than 0 and not exposed to light-sensitive composition
Is small, and the phase of the second light transmitting portion is the first light transmitting
Is a phase shift part having a phase different from that of the
The part of the phase shift part that is the light transmission part of
A third portion having the same phase as that of the transmission portion, and
The light transmittance of the third portion is determined by the corresponding film formed on the substrate.
Set to a desired amount by controlling the light transmittance of
And the third portion is wider than the width of the first light transmitting portion.
Characterized by forming an auxiliary pattern with a smaller width
And a phase shift mask for
Is achieved.

According to a sixth aspect of the present invention, there is provided a light-shielding region, a first light-transmitting portion having a width for exposing the exposed photosensitive composition to form a desired pattern, and the first light-transmitting portion. And a second light transmission part formed between the light shielding region and
The light transmittance of the second light transmitting portion is larger than 0 and small enough not to expose the exposed photosensitive composition, and the phase of the second light transmitting portion is different from the phase of the first light transmitting portion. A phase shift portion, further comprising a third portion having a phase equal to that of the first light transmission portion in a part of the phase shift portion which is the second light transmission portion, and the light of the third portion The auxiliary pattern has a transmittance equal to that of the first light transmitting portion, and the third portion has a width smaller than that of the first light transmitting portion.
And the light transmitted through the third portion is the second light transmitting portion.
The exposure method is characterized by performing exposure using a phase shift mask that interferes with the light transmitted through the phase shift portion , which achieves the above object.

According to a seventh aspect of the present invention, there is provided a light-shielding region, a first light-transmitting portion having a width for exposing the exposed photosensitive composition to form a desired pattern, and the first light-transmitting portion. And a second light transmission part formed between the light shielding region and
The light transmittance of the second light transmitting portion is larger than 0 and small enough not to expose the exposed photosensitive composition, and the phase of the second light transmitting portion is different from the phase of the first light transmitting portion. A phase shift portion, further comprising a third portion having a phase equal to that of the first light transmission portion in a part of the phase shift portion which is the second light transmission portion, and the light of the third portion The auxiliary pattern has a transmittance equal to that of the second light transmitting portion, and the third portion has a width smaller than that of the first light transmitting portion.
And the light transmitted through the third portion is the second light transmitting portion.
The exposure method is characterized by performing exposure using a phase shift mask that interferes with the light transmitted through the phase shift portion , which achieves the above object.

According to an eighth aspect of the present invention, there is provided a light-shielding region, a first light-transmitting portion having a width for exposing the exposed photosensitive composition to form a desired pattern, and the first light-transmitting portion. And a second light transmission part formed between the light shielding region and
The light transmittance of the second light transmitting portion is larger than 0 and small enough not to expose the exposed photosensitive composition, and the phase of the second light transmitting portion is different from the phase of the first light transmitting portion. A phase shift portion, further comprising a third portion having a phase equal to that of the first light transmission portion in a part of the phase shift portion which is the second light transmission portion, and the light of the third portion The transmittance is higher than the light transmittance of the second light transmitting portion and lower than that of the first light transmitting portion, and the third portion has an auxiliary width smaller than the width of the first light transmitting portion. Forming a pattern and the third part
The light that has passed through the minute part is the phase shift part that is the second light transmitting part.
An exposure method characterized by performing exposure using a phase shift mask that interferes with light transmitted through
This achieves the above object.

According to a ninth aspect of the present invention, there is provided a light-shielding region, a first light-transmitting portion having a width for exposing the exposed photosensitive composition to form a desired pattern, and the first light-transmitting portion. And a second light transmission part formed between the light shielding region and
The light transmittance of the second light transmitting portion is larger than 0 and small enough not to expose the exposed photosensitive composition, and the phase of the second light transmitting portion is different from the phase of the first light transmitting portion. A phase shift portion, further comprising a third portion having a phase equal to that of the first light transmission portion in a part of the phase shift portion which is the second light transmission portion, and the light of the third portion The transmittance is set to a desired amount by controlling the light transmittance of a corresponding portion of the substrate, and the third portion has an auxiliary pattern having a width smaller than the width of the first light transmitting portion. To
None and the light transmitted through the third portion is the second light transmitting portion.
An exposure method characterized by performing exposure using a phase shift mask that interferes with light that has passed through a certain phase shift portion , thereby achieving the above object. According to a tenth aspect of the present invention, there is provided a light-shielding region, a first light-transmitting portion having a width for exposing the exposed photosensitive composition to form a desired pattern, the first light-transmitting portion and the light-shielding region. A second light-transmitting portion formed between the second light-transmitting portion and the second light-transmitting portion, the light transmittance of the second light-transmitting portion is larger than 0 and is small enough not to expose the exposed photosensitive composition, and The phase of the light transmitting portion is different from that of the first light transmitting portion, and a part of the phase shift portion which is the second light transmitting portion has the same phase as the first light transmitting portion. And a light transmittance of the third portion is
A desired amount is set by controlling the light transmittance of a corresponding film formed on the substrate, and the third portion is an auxiliary pattern having a width smaller than the width of the first light transmitting portion.
And the light transmitted through the third portion is the second light transmitting portion.
The exposure method is characterized by performing exposure using a phase shift mask that interferes with the light transmitted through the phase shift portion , which achieves the above object.

Each of the above inventions is based on the above configuration.
Therefore, the above-mentioned object is achieved.

In the invention of the present application, the second light transmissive portion can bring about a phase shift effect if the light transmissivity exceeds 0, and preferably the light transmissivity is 1.0%.
With the above, a good effect is obtained. The upper limit depends on the photosensitive composition to be exposed (resist etc.). Generally, about 10
The light transmittance is preferably about 15% to 15%.

[0018]

[0019]

SUMMARY OF] According to the present invention 1,6, light transmitted through the first light transmitting County and formed phase shift portion to the second light transmitting portion interferes, the first light transmitting on the wafer The image of the part is formed sharply. Since the light intensity of the second light transmitting portion is controlled so as not to expose the resist on the wafer to light, an unnecessary image is not formed on the wafer by the light of the second light transmitting portion. Only the desired image can be formed on the wafer. As a result, a relative positional deviation occurs between the first light transmitting portion and the phase shift portion, and even when the width of the phase shift portion deviates from a predetermined value, the light of the second light transmitting portion causes the light on the wafer. Unnecessary images are not formed, it is not necessary to strictly control registration accuracy in drawing, productivity is improved, and cost can be reduced. Furthermore,
By the light transmitted through the third light transmitting portion, the H.264. Hopkin
color diffraction theory by s, "Onth e diffra
action theory of optical i
mages, Proc. Roy. Soc. A217 (1
953) pages 408-432, based on a paper by Fukuda, "Axial image superpo.
sing (super-FLEX) effect us
ing theme modulation me
how for optical lithogra
phy, Proceeding of of MicroP
Based on the theory described in pp. 54-59 'of Process (1991), in addition to eliminating the drawbacks of the conventional phase shift method, an improvement in resolution in light exposure and an increase in the depth of focus can be achieved.

Further, according to the inventions of claims 2 to 5, 7 to 10 , since the thickness of the light shielding film can be reduced only in a necessary portion, transmission type defects can be remarkably reduced.

[0021]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will now be described based on embodiments with reference to the drawings. A sample from Example 1 described below 4, the
It is outside the invention, but is a premise of the description of each embodiment of the present invention.
Therefore, description will be given prior to the embodiments. After that, practical examples 5 to 8 (examples 1 to 4 are omitted).
And explain. However, as a matter of course, the present invention
It is not limited to the examples. In the drawings, the same reference numerals mean the same elements.

Reference Example 1 A schematic cross-sectional view of the phase shift mask of Reference Example 1 is shown in FIG. This embodiment ( hereinafter, for convenience, this reference example
Use words to explain. The same applies to Reference Examples 2 to 4 below.
Phase shift mask in which) like, as shown in FIG. 1,
The light-blocking region 13 and the first light-transmitting part 10 and the second light-transmitting part 12 formed between the first light-transmitting part and the light-blocking region 13 are provided. The light transmittance of the portion 12 is larger than 0 and small enough not to expose the exposed photosensitive composition (resist), and the phase of the second light transmitting portion 12 is different from that of the first light transmitting portion 10. The phase shift portion (the reference numeral 11 indicates the phase shift material portion formed of the phase shift material. In the present embodiment, the light transmitting portion 1 is shown.
Since 0 corresponds to a portion that transmits light only to the substrate 1 itself, in order to make the phase different from that of the light transmitting portion 10, the light transmitting portion has a phase shift material portion in which a phase shift material is formed on the substrate 1. 10), that is, the phase-shifted portion in which the light is transmitted by being relatively phase-shifted with respect to the light transmitted through the substrate 1 itself. The same applies to the description of other reference examples and examples in this specification.

In the present embodiment, the light transmitted through the light transmitting portion 10 and the light transmitted through the second light transmitting portion 12 having a phase shift function are out of phase with each other by 180 degrees, for example. The phase shift material part 11 is made of, for example, SOG (spin-on glass), and if the thickness d is d = λ / (2 (n−1)), the light transmitted through the light transmission part 10 and the phase shift material are The phase of the light transmitted through the portion 11 changes by 180 degrees. Note that λ is the wavelength of the exposure light, and n is the refractive index of SOG. The light transmittance of the phase shift portion is larger than 0 and small enough not to expose the resist on the wafer. Therefore, the phase shift material part
The light transmitted through 11 and emitted from the second light transmitting portion 12 does not expose the resist on the wafer to light. Thus, the light transmitted through the second light transmitting portion 12 does not expose the resist on the wafer to light, so that even if the position of the light transmitting portion 10 is slightly deviated from the desired position, the transfer pattern No deterioration occurs. Further, by appropriately selecting the width of the second light transmitting portion 12, in addition to the effect of light interference occurring at the boundary between the light transmitting portion 10 and the phase shift material portion 11 by the so-called conventional halftone method, A so-called conventional edge-enhanced type light transmission part 10 and phase shift material part 11
The effect of interference with the light transmitted through is superimposed, and a remarkable effect that the transfer light shape is sharper than that of the conventional phase shift mask is obtained. In addition, the part that transmits light is the light transmitting part.
Since it is limited to 10 and the second light transmitting portion 12, the light shielding band can be secured without any problem even in the exposure using the stepper, and the light transmitting type of the light shielding film which is remarkable in the conventional halftone method. The defects can be significantly reduced. Further, even if the position of the light transmitting portion 10 is slightly deviated from the desired position, the transfer pattern is not deteriorated. Therefore, a large registration margin is used when the mask pattern is drawn by an electron beam or the like. Therefore, the yield in mask manufacturing can be significantly improved.

The manufacturing method will be described below with reference to FIGS. In the following description, the case where the resist is a positive type will be described. A light-shielding film 2 made of, for example, chromium is formed on a transparent substrate 1 made of, for example, quartz by a sputtering method to obtain the structure shown in FIG. afterwards,
A resist 3 is applied on the light shielding film 2 to obtain the structure shown in FIG. Next, a structure shown in FIG. 4 is obtained by a drawing process with an electron beam from a drawing device (electron beam irradiation region is shown by reference numeral I) and an electron beam resist developing process. The light shielding film 2 is etched to obtain the structure shown in FIG. In the etching process,
The thickness of the chromium film thinned by etching is set to a desired value by precisely controlling the etching conditions so that the intensity of transmitted light is greater than 0 and the resist on the wafer is not exposed to light. Controlled by. In this embodiment, when chromium is used as the light shielding material, the film thickness is about 20.
It was formed so as to have a light transmittance of about 10 to 16% by setting it to 0Å to 300Å . Next, set SOG4 to 1
In order to realize a phase difference of 80 degrees, d = λ / (2 (n
It was applied so as to have a film thickness of -1)). That is, i-line (λ
= 365 nm), SOG with refractive index n = 1.47
In the case of a KrF excimer laser (λ = 248 nm), SOG having a refractive index n = 1.51 was used to form a film having a phase difference of 180 degrees.

Next, the resist 3'which is a photosensitive composition.
Is applied to obtain the structure of FIG. The structure shown in FIG. 7 is obtained by a drawing process using an electron beam from the drawing device (electron beam irradiation region is indicated by reference numeral II) and an electron beam resist developing process.
SOG is etched in plasma with a mixed gas of carbon tetrafluoride and oxygen, and chromium is further etched in plasma with a mixed gas of chlorine gas and oxygen to obtain the structure shown in FIG. The resist 3'is peeled off to finally obtain the structure shown in FIG.

For i-line and KrF obtained in this example
When exposure was performed with each exposure light using a phase shift mask for excimer laser, a fine pattern was successfully obtained.

In the process of this embodiment, a positive type resist is used, but of course, a negative type resist may be used. In this case, the electron beam drawing area is different from that of the positive type only in that it is opposite. Further, other materials are also optional, and for example, the material for realizing the phase shift difference is not limited to SOG, and the light shielding film is not limited to chromium.

Reference Example 2 Reference Example 2 is different from Reference Example 1 in that the light transmitting portion 10 in FIG. 1 is a phase shift portion. With reference example 1
With the configuration of Reference Example 2 , there is no difference in performance as a phase shift mask.

The manufacturing method will be described below with reference to FIGS.
Will be described with reference to. In the following description, the case where the resist is a positive type will be described. A light shielding film 2 made of, for example, chromium is formed on a substrate 1 made of quartz by a sputtering method. Then, a resist 3 is applied on the light shielding film 2 to obtain the structure shown in FIG. Next, a structure shown in FIG. 11 is obtained by a drawing process using an electron beam from a drawing device and a developing process of an electron beam resist. Figure 1 by etching the light-shielding film
The structure shown in 2 is obtained. In the etching process, the thickness of the chromium film is controlled to a desired value by precisely controlling the etching conditions so that the intensity of transmitted light is greater than 0 and the resist on the wafer is not exposed. To be done. Next, a resist 3'is applied to obtain the structure shown in FIG. The structure of FIG. 14 is obtained through a drawing process with an electron beam from a drawing device, a developing process of an electron beam resist, and an etching process in plasma with a mixed gas of chromium and chlorine gas of chromium. Next, SOG4 is applied so that a film thickness of d = λ / (2 (n-1)) is applied so that a phase difference of 180 degrees can be realized, and a resist 3 ″ is applied to prevent electrostatic charge.
The stop film 6 is applied to obtain the structure of FIG. A drawing process using an electron beam from the drawing device (the electron beam irradiation area at this time is
IIa, IIIb), an antistatic film removing step, an electron beam resist developing step, an etching step in plasma with a mixed gas of carbon tetrafluoride and oxygen of SOG,
Finally, the structure shown in FIG. 16 is obtained.

In the process of this embodiment, a positive type resist is used, but of course, a negative type resist may be used. In this case, the electron beam drawing area is different from that of the positive type only in that it is opposite. Further, various materials are arbitrary as in the first embodiment, and the material that realizes the phase shift difference is not limited to SOG, and the light shielding film is not limited to chromium.

Reference Example 3 Reference Example 3 differs from Reference Example 1 in that SOG in FIG. 1 is applied under the chromium film. Reference example 1 and reference example
In the configuration of No. 3, there is no difference in performance as a phase shift mask.

The manufacturing method will be described below with reference to FIGS. In the following description, the case where the resist is a positive type will be described. On the substrate 1 made of quartz, SOG
4 so that a phase difference of 180 degrees can be realized, d = λ /
SOG4 is applied to a film thickness of (2 (n-1)).
A light-shielding film 2 made of, for example, chromium is formed thereon by a sputtering method to obtain the structure shown in FIG. Then, a resist 3 is applied on the light shielding film 2 to obtain the structure shown in FIG. Next, a structure shown in FIG. 19 is obtained by a drawing process with an electron beam from a drawing device and a developing process of an electron beam resist. The light shielding film is etched to obtain the structure shown in FIG. In the etching process, the thickness of the chromium film is controlled to a desired value by precisely controlling the etching conditions so that the intensity of transmitted light is greater than 0 and the resist on the wafer is not exposed. To be done. Next, a resist 3 ″ is applied to obtain the structure shown in FIG. Drawing process with electron beam from drawing device, electron beam resist developing process, etching process in plasma with mixed gas of chromium and chlorine gas and oxygen, etching process in plasma with mixed gas of carbon tetrafluoride and oxygen of SOG Finally, the structure of FIG. 22 is obtained.

In the process of this embodiment, the positive type resist is used, but of course the negative type resist may be used. In this case, the electron beam drawing area is different from that of the positive type only in that it is opposite. Further, the material for realizing the phase shift difference is not limited to SOG, and the light shielding film is not limited to chromium.

Reference Example 4 Reference Example 4 is different from Reference Example 1 in that the phase of the light transmitting portion is changed by etching the substrate of the light transmitting portion. There is no difference in performance as a phase shift mask between the configurations of Reference Example 1 and Reference Example 4 .

The manufacturing method will be described below with reference to FIGS. In the following description, the case where the resist is a positive type will be described. A light shielding film 2 made of chromium is formed on a substrate 1 made of quartz by a sputtering method,
Resist 3 is applied to obtain the structure shown in FIG. Next, a structure shown in FIG. 24 is obtained by a drawing process using an electron beam from a drawing device and a developing process of an electron beam resist. The light shielding film is etched to obtain the structure shown in FIG. In the etching process, the thickness of the chromium film is controlled by precisely controlling the etching conditions so that the intensity of the transmitted light is greater than 0 and the resist on the wafer is not exposed.
It is controlled to the desired value. Next, a resist 3'is applied, and FIG.
Get the structure of. Drawing process by electron beam from drawing device,
The structure shown in FIG. 27 is obtained by the electron beam resist developing process. Next, the structure of FIG. 28 is finally obtained through an etching process in plasma of a mixed gas of chromium and chlorine gas and oxygen, and an etching process in plasma of a mixed gas of carbon tetrafluoride and oxygen of the quartz substrate. Here, the quartz substrate is d = λ so that a phase difference of 180 degrees can be realized.
Etched to a depth of / (2 (n-1)).

In the process of this embodiment, a positive type resist was used, but of course, a negative type resist may be used. In this case, the electron beam drawing area is different from that of the positive type only in that it is opposite. Further, the means for realizing the phase shift difference is not limited to the configuration based on the difference in the thickness of the quartz substrate , and the light shielding film is not limited to chromium.

Example 5 Example 5 embodies the inventions of claims 1 and 6 . FIG. 29 shows a schematic sectional view of the phase shift mask of the fifth embodiment. In FIG. 29, a third portion (third light transmitting portion)
Is indicated by reference numeral 20. In the fifth embodiment, the light transmitting portion 10
The phase of the light that has passed through and the phase of the light that has passed through the phase shift unit are 180 degrees out of phase. The phase shift 11 is made of, for example, SOG (spin on glass) and has a thickness d of d.
= Λ (2 (n-1)), the phase of the light transmitted through the light transmission unit 10 and the phase of the light transmitted through the phase shift unit 11 are 180
Change. Note that λ is the wavelength of the exposure light, and n is the refractive index of SOG. The light transmittance of the phase shift portion is larger than 0 and small enough not to expose the resist on the wafer to light. Therefore, the light transmitted through the phase shift unit 11 does not expose the resist on the wafer. Phase shift unit 1
Since the light transmitted through 1 does not expose the resist on the wafer to light, the transfer pattern does not deteriorate even if the position of the light transmitting portion 10 is slightly deviated from the desired position. Further, by properly selecting the phase shift section, in addition to the effect of light interference occurring at the boundary between the light transmission section 10 and the phase shift section 11 by the so-called conventional halftone method, so-called conventional edge The effect of the interference between the light transmission section 10 and the light transmitted through the phase shift section 11 by the emphasis type and the effect of the interference between the light transmitted through the phase shift section and the light transmitted through the third light transmission section 20 are superimposed. However, a remarkable effect that the transfer light shape is sharper than that of the conventional phase shift mask can be obtained. Further, since the light transmitting portion is limited to the light transmitting portion 10, the phase shift portion 11 and the third light transmitting portion 20, it is possible to secure the light shielding band without any problem even in the exposure using the stubber,
Further, it is possible to significantly reduce the light transmission defects of the light-shielding film, which are remarkable in the conventional halftone method. Further, the light transmitting portion 10
Since the transfer pattern does not deteriorate even if the position is shifted from a desired position to some extent, a large margin can be set for the registration when the mask pattern is drawn by an electron beam or the like. The yield in manufacturing can be greatly improved.

The manufacturing method will be described below with reference to FIGS. In the following description, the case where the resist is a positive type will be described. A light shielding film 2 made of, for example, chromium is formed on a substrate 1 made of quartz by a sputtering method, and a resist 3 is applied on the light shielding film 2 to obtain the structure shown in FIG. Next, a drawing process using an electron beam from a drawing device,
The electron beam resist developing process yields the structure shown in FIG. The light shielding film is etched to obtain the structure shown in FIG. In the etching process, the thickness of the chromium film is controlled to a desired value by precisely controlling the etching conditions so that the intensity of transmitted light is greater than 0 and the resist on the wafer is not exposed. To be done. Next SOG
4 so that a phase difference of 180 degrees can be realized, d = λ /
Coating is performed to a film thickness of (2 (n-1)), and resist 3'is coated to obtain the structure shown in FIG. The structure shown in FIG. 34 is obtained by a drawing process with an electron beam from the drawing device (electron beam irradiation regions are shown by IIa to IIc) and an electron beam resist developing process. SOG is etched in a plasma of a mixed gas of carbon tetrafluoride and oxygen, and further etched in a plasma of a mixed gas of chromium and chlorine gas,
The structure shown in FIG. 35 is obtained. The resist 3'is stripped off, and finally the structure shown in FIG. 36 is obtained. When the phase shift mask obtained in this example was used to perform exposure using i-line and KrF excimer laser light, good pattern formation could be performed.

In the process of this embodiment, a positive resist is used, but of course, a negative resist may be used. In this case, the electron beam drawing area is different from that of the positive type only in that it is opposite. Further, the material for realizing the phase shift difference is not limited to SOG, and the light shielding film is not limited to chromium.

Example 6 Example 6 is different from Example 5 in that the light transmitting portion 20 in FIG. 29 is a phase shift layer 4 formed of a phase shift material . The phase shift layer 4 of FIG.
Forming a first light transmitting portion 10 and a third light transmitting portion
20 and the phase shift material is not formed.
Therefore, the light is transmitted with a phase different from that of the light transmitting portions 10 and 20.
The second light whose part to pass is the phase shift part
It forms the transparent portion 12. There is no difference in performance as the phase shift mask between the configurations of the sixth embodiment and the fifth embodiment.

The manufacturing method will be described below with reference to FIGS.
Will be described with reference to. In the following description, the case where the resist is a positive type will be described. A light shielding film 2 made of, for example, chromium is formed on a substrate 1 made of quartz by a sputtering method. Then, a resist 3 is applied on the light shielding film 2 to obtain the structure shown in FIG. Next, a structure shown in FIG. 38 is obtained by a drawing process using an electron beam from a drawing device and a developing process of an electron beam resist. Figure 3 after etching the light-shielding film
The structure shown in 9 is obtained. In the etching process, the thickness of the chromium film is controlled to a desired value by precisely controlling the etching conditions so that the intensity of transmitted light is greater than 0 and the resist on the wafer is not exposed. To be done. Next, a resist 3'is applied to obtain the structure shown in FIG. A structure shown in FIG. 41 is obtained through a drawing process with an electron beam from a drawing device, a developing process of an electron beam resist, and an etching process in plasma with a mixed gas of chlorine gas of chromium and oxygen. Next, SOG4 is applied so that a film thickness of d = λ / (2 (n-1)) is applied so that a phase difference of 180 degrees can be realized, and a resistor 3 ″ is applied to prevent electrostatic charge.
The stop film 6 is applied to obtain the structure shown in FIG. Drawing process by electron beam from drawing device (electron beam irradiation area is defined as IIIa-I
(Indicated by IId), the step of removing the antistatic film, the step of developing the electron beam resist, and the step of etching in the plasma with a mixed gas of carbon tetrafluoride and oxygen of SOG to finally obtain the structure shown in FIG. .

In the process of this embodiment, a positive type resist is used, but of course, a negative type resist may be used. In this case, the electron beam drawing area is different from that of the positive type only in that it is opposite. Further, the material for realizing the phase shift difference is not limited to SOG, and the light shielding film is not limited to chromium.

Example 7 Example 7 differs from Example 5 in that the SOG in Example 5 is applied under the chromium film. Example 7
There is no difference in performance as the phase shift mask between the configuration of Example 5 and the configuration of Example 5.

The manufacturing method will be described below with reference to FIGS. 44 to 49. In the following description, the case where the resist is a positive type will be described. On the substrate 1 made of quartz, SOG
4 so that a phase difference of 180 degrees can be realized, d = λ /
SOG4 is applied to a film thickness of (2 (n-1)).
A light-shielding film 2 made of, for example, chromium is formed thereon by a sputtering method, and a resist 3 is applied on the light-shielding film 2.
The structure shown in FIG. 44 is obtained. Next, a structure shown in FIG. 45 is obtained by a drawing process using an electron beam from a drawing device and a developing process of an electron beam resist. The light shielding film is etched to obtain the structure shown in FIG. In the etching process, the thickness of the chromium film is controlled to a desired value by precisely controlling the etching conditions so that the intensity of transmitted light is greater than 0 and the resist on the wafer is not exposed. To be done. Next, a resist 3'is applied to obtain the structure shown in FIG. The structure shown in FIG. 48 is obtained by a drawing process using an electron beam from a drawing device and a developing process of an electron beam resist. The structure of FIG. 49 is finally obtained through an etching process in a plasma of a mixed gas of chromium and chlorine gas and an oxygen in a plasma of a mixed gas of SOG of carbon tetrafluoride and oxygen.

In the process of this embodiment, a positive type resist was used, but of course, a negative type resist may be used. In this case, the electron beam drawing area is different from that of the positive type only in that it is opposite. Further, the material for realizing the phase shift difference is not limited to SOG, and the light shielding film is not limited to chromium.

Example 8 Example 8 differs from Example 5 in that the phase of the light transmitting portion is changed by etching the substrate of the light transmitting portion. There is no difference in performance as the phase shift mask between the configurations of the eighth and fifth embodiments.

The manufacturing method will be described below with reference to FIGS. In the following description, the case where the resist is a positive type will be described. A light shielding film 2 made of chromium is formed on a substrate 1 made of quartz by a sputtering method,
Resist 3 is applied to obtain the structure shown in FIG. Next, a structure shown in FIG. 51 is obtained by a drawing process using an electron beam from a drawing device and a developing process of an electron beam resist. The light shielding film is etched to obtain the structure shown in FIG. In the etching process, the thickness of the chromium film is controlled by precisely controlling the etching conditions so that the intensity of the transmitted light is greater than 0 and the resist on the wafer is not exposed.
It is controlled to the desired value. Next, a resist 3'is applied, and FIG.
Get the structure of. Drawing process by electron beam from drawing device,
Electron beam resist developing step, etching step in plasma with mixed gas of chlorine chlorine gas and oxygen,
The structure of FIG. 54 is obtained through an etching process in a plasma of a mixed gas of carbon tetrafluoride and oxygen on the quartz substrate. The resist is stripped off, and finally the structure shown in FIG. 55 is obtained. Here, the quartz substrate is d = λ so that a phase difference of 180 degrees can be realized.
Etched to a depth of / (2 (n-1)).

In the process of this embodiment, the resist is positive type, but of course negative type may be used. In this case, the electron beam drawing area is different from that of the positive type only in that it is opposite. Further, the means for realizing the phase shift difference is not limited to the configuration based on the difference in the thickness of the quartz substrate, and the light shielding film is not limited to chromium.

[Embodiment 9] Embodiment 9 embodies the inventions of claims 2 and 7 . A schematic cross-sectional view of Example 9 is shown in FIG. The third portion (third light transmitting portion) in the present embodiment is indicated by reference numeral 21. In FIG. 56, the light transmitted through the light transmitting portion 10
The light transmitted through the phase shifter 11 has a phase of, for example, 180
Deviated . The phase shift unit 11 is made of, for example, SOG (spin on glass), and has a thickness d of d = λ / (2
(N-1)), the light transmitted through the light transmitting portion 10 is
The phase of the light transmitted through the phase shifter 11 changes by 180 degrees. Note that λ is the wavelength of the exposure light, and n is the refractive index of SOG. The light transmittance of the phase shift portion is larger than 0 and small enough not to expose the resist on the wafer to light. Therefore, the light transmitted through the phase shift unit 11 does not expose the resist on the wafer. Since the light transmitted through the phase shifter 11 does not expose the resist on the wafer to light, the transfer pattern does not deteriorate even if the position of the light transmitter 10 is slightly deviated from the desired position. . Further, by appropriately selecting the width of the phase shift section, in addition to the effect of light interference occurring at the boundary between the light transmission section 10 and the phase shift section 11 by the so-called conventional halftone method, so-called conventional edge The effect of the interference between the light transmission section 10 and the light transmitted through the phase shift section 11 by the emphasis type and the effect of the interference between the light transmitted through the phase shift section and the light transmitted through the third light transmission section 21 are superimposed. However, the remarkable effect that the transfer light shape is sharper than that of the conventional phase shift mask is restricted. The difference from the embodiments 5 to 8 is that the light transmittance of the third light transmitting portion 21 is
This is different from the light transmitting portion 10. Since the light transmitting portion is limited to the light transmitting portion 10, the phase shift portion 11 and the third light transmitting portion 21, it is possible to secure the light shielding band without any problem even in the exposure using the stepper. It is possible to remarkably reduce the light transmission defects of the light-shielding film which is superior to the half-tone type of the mold. Further, the light transmitting portion 10
Since the transfer pattern does not deteriorate even if the position is shifted from a desired position to some extent, it is possible to obtain a large registration margin when the mask pattern is drawn by an electron beam or the like. The yield in can be greatly improved.

The manufacturing method will be described below with reference to FIGS. In the following description, the case where the resist is a positive type will be described. A light-shielding film 2 made of, for example, chromium is formed on a substrate 1 made of quartz by a sputtering method, and a resist 3 is applied on the light-shielding film 2 to obtain the structure shown in FIG. Next, a drawing process using an electron beam from a drawing device,
The structure shown in FIG. 58 is obtained by the electron beam resist developing process. The light shielding film is etched to obtain the structure shown in FIG. In the etching process, the thickness of the chromium film is controlled to a desired value by precisely controlling the etching conditions so that the intensity of transmitted light is greater than 0 and the resist on the wafer is not exposed. To be done. Next SOG
4 so that a phase difference of 180 degrees can be realized, d = λ /
Coating is performed to a film thickness of (2 (n-1)), and resist 3'is coated to obtain the structure of FIG. Drawing process by electron beam from drawing device, electron beam resist developing process, SOG
As shown in FIG. 61, the etching process in plasma with a mixed gas of carbon tetrafluoride and oxygen and the etching process in plasma with a mixed gas of chromium and chlorine gas of FIG.
Get the structure of. Next, a resist 3 ″ is applied, and a drawing process using an electron beam from a drawing device (FIG. 62), an electron beam resist developing process, and an etching process in plasma with a mixed gas of SOG carbon tetrafluoride and oxygen are performed. Finally, the structure shown in FIG. 63 is obtained.

In the steps of this embodiment, a positive type resist is used, but of course a negative type resist may be used. In this case, the electron beam drawing area is different from that of the positive type only in that it is opposite. Further, the material for realizing the phase shift difference is not limited to SOG, and the light shielding film is not limited to chromium.

Example 10 Example 10 is a phase shift layer in which the light transmitting portion 10 and the third light transmitting portion 21 in FIG. 63 are formed of a phase shift material.
4 is different from the case of the ninth embodiment. FIG. 70
Of the first light-transmitting portion 10,
And the third light transmitting portion 21, and the phase shift material is formed.
Is not phased with the light transmission parts 10 and 21.
The phase shift is the part that transmits light by differentiating the
The second light transmitting portion 12 which is a portion is formed. There is no difference in performance as the phase shift mask between the configurations of the tenth and ninth embodiments.

The manufacturing method thereof will be described below with reference to FIGS. In the following description, the case where the resist is a positive type will be described. A light shielding film 2 made of, for example, chromium is formed on a substrate 1 made of quartz by a sputtering method, and a resist 3 is applied on the light shielding film 2 to obtain a structure shown in FIG. Next, a structure shown in FIG. 65 is obtained by a drawing process using an electron beam from a drawing device and a developing process of an electron beam resist. The light shielding film is etched to obtain the structure shown in FIG. In the etching process, the thickness of the chromium film is controlled to a desired value by precisely controlling the etching conditions so that the intensity of transmitted light is greater than 0 and the resist on the wafer is not exposed. To be done. Next, a resist 3'is applied to obtain the structure shown in FIG. A structure shown in FIG. 68 is obtained by a drawing process with an electron beam from a drawing apparatus, an electron beam resist developing process, and an etching process in plasma with a mixed gas of chromium gas and chlorine gas. Next, SOG4 is applied so that a film thickness of d = λ / (2 (n-1)) is applied so that a phase difference of 180 degrees can be realized, a resist 3 ″ is applied, and an antistatic film 6 is formed. Apply
Then, the structure shown in FIG. 69 is obtained. Next, a drawing process with an electron beam from a drawing device, an antistatic film removing process, an electron beam resist developing process, and an etching process in plasma with a mixed gas of carbon tetrafluoride and oxygen of SOG are finally performed. To obtain the structure shown in.

In the process of this embodiment, the resist is of positive type, but of course, negative type may be used. In this case, the electron beam drawing area is different only in the case of the positive type. Further, the material for realizing the phase shift difference is not limited to SOG, and the light shielding film is not limited to chromium.

Embodiment 11 Embodiment 11 is a modification of Embodiment 9. In the present embodiment, the light transmittance of the third light transmitting portion can be arbitrarily set, and thus the ninth embodiment
Different from

The manufacturing method will be described below with reference to FIGS. In the following description, the case where the resist is a positive type will be described. A light-shielding film 2 made of, for example, chromium is formed on a substrate 1 made of quartz by a sputtering method, and a resist 3 is applied on the light-shielding film 2 to obtain the structure shown in FIG. Next, a structure shown in FIG. 72 is obtained by a drawing process using an electron beam from a drawing device and a developing process of an electron beam resist. The light shielding film is etched to obtain the structure shown in FIG. In the etching process, the thickness of the chromium film is controlled to a desired value by precisely controlling the etching conditions so that the intensity of transmitted light is greater than 0 and the resist on the wafer is not exposed. To be done. Next, a resist 3'is applied to obtain the structure shown in FIG. The structure shown in FIG. 75 is obtained by a drawing process with an electron beam from a drawing device, an electron beam resist developing process, and an etching process in plasma with a mixed gas of chromium chlorine gas and oxygen. Next, SOG4 is applied so that a film thickness of d = λ / (2 (n-1)) is applied so that a phase difference of 180 degrees can be realized, a resist 3 ″ is applied, and the structure of FIG. obtained.
Drawing step by an electron beam from the portrayal unit, a developing step of electron beam resist, an etching step in the plasma with a mixed gas of carbon tetrafluoride and oxygen SOG, etch in plasma using a mixed gas of chromium chlorine gas and oxygen Through the process, the structure shown in FIG. 77 is obtained. Here, the etching of chromium is controlled so that the light transmittance of the third light transmitting portion becomes a desired value. Next, a resist 3 ″ ″ is applied, an antistatic film 6 is applied, and the structure shown in FIG. 78 is obtained.
Obtained Ru. The rendering process, strip by an electron beam emitted from an exposure device
Antistatic film removal process, electron beam resist development process, SO
By the etching step in the plasma of the mixed gas of carbon tetrafluoride and oxygen of G, the structure finally shown in FIG. 79 is obtained.

In the process of this embodiment, a positive type resist is used, but of course, a negative type resist may be used. In this case, the electron beam drawing area is different only in the case of the positive type. Further, the material for realizing the phase shift difference is not limited to SOG, and the light shielding film is not limited to chromium.

Twelfth Embodiment A twelfth embodiment is a modification of the tenth embodiment. Example 10
The difference from Example 10 is that the light transmittance of the light transmitting portion can be set arbitrarily. Further, there is no difference in performance as the phase shift mask between the configurations of the twelfth and eleventh embodiments.
That is, the portion forming the phase shift layer 4 in FIG.
Of the light transmitting portion 10 and the third light transmitting portion 21 of
Since the shift material is not formed, the light transmitting portion 1
It means that light is transmitted with a phase different from 0 and 21.
The second light transmission part 12 whose part is the phase shift part is not formed.
You

The manufacturing method will be described below with reference to FIGS. In the following description, the case where the resist is a positive type will be described. A light-shielding film 2 made of, for example, chromium is formed on a substrate 1 made of quartz by a sputtering method, and a resist 3 is applied on the light-shielding film 2 to obtain the structure shown in FIG. Next, a structure shown in FIG. 81 is obtained by a drawing process using an electron beam from a drawing device and a developing process of an electron beam resist. The light shielding film is etched to obtain the structure shown in FIG. In the etching process, the thickness of the chromium film is controlled to a desired value by precisely controlling the etching conditions so that the intensity of transmitted light is greater than 0 and the resist on the wafer is not exposed. To be done. Then a resist 3 'was applied to obtain the structure of Figure 83. A structure shown in FIG. 84 is obtained by a drawing process with an electron beam from a drawing device, an electron beam resist developing process, and an etching process in plasma with a mixed gas of chromium chlorine gas and oxygen.
Next, a resist 3 ″ is applied to obtain the structure shown in FIG. Next, a drawing process using an electron beam from a drawing device,
By the electron beam resist developing process and the etching process in plasma with a mixed gas of chromium chlorine gas and oxygen,
The structure shown in FIG. 86 is obtained. Here, the etching of chromium is controlled so that the light transmittance of the third light transmitting portion becomes a desired value. Next, SOG4 is applied so as to have a film thickness of d = λ (2 (n-1)) so that a phase difference of 180 degrees can be realized, and a resist 3 ′ ″ is applied to the antistatic film.
6 is applied to obtain the structure shown in FIG. Next, the electron beam drawing process from the drawing device and the antistatic film removal process
The structure shown in FIG. 88 is finally obtained by the electron beam resist developing step and the etching step in plasma with a mixed gas of SOG carbon tetrafluoride and oxygen.

In the process of this embodiment, a positive type resist is used, but of course, a negative type resist may be used. In this case, the electron beam drawing area is different from that of the positive type only in that it is opposite. Further, the material for realizing the phase shift difference is not limited to SOG, and the light shielding film is not limited to chromium.

Example 13 Example 13 is a modification of Example 11. This is different from the eleventh embodiment in that the light transmittances of the eleventh embodiment and the third light transmitting portion can be arbitrarily set by ion beam irradiation.

The manufacturing method will be described below with reference to FIGS. 89 and 90. In Example 13, the structure obtained in Example 5 was further irradiated with an ion beam on the third light transmitting portion, and the transmittance of the third light transmitting portion was precisely controlled by the irradiation amount of ions. To do. The third light transmitting portion shown in FIG. 89 for the ion beam (focused ion beam irradiation areas are denoted by reference characters Va and Vb
90) to obtain the light transmittance control region 5 shown in FIG. 90.

Example 14 Example 14 is a modification of Example 12. It differs from Example 12 in that the light transmittance of the third light transmitting portion can be arbitrarily set by ion beam irradiation. In this example,
The portion forming the phase shift layer 4 in FIG. 92 is the first light transmitting portion.
10 and that the phase shift material is not formed
Therefore, the light is transmitted with a phase different from that of the light transmitting portion 10.
The second light transmission part in which the different part is the phase shift part
Make twelve.

The manufacturing method will be described below with reference to FIGS. 91 and 92. In Example 14, the structure obtained in Example 6 was further irradiated with an ion beam on the third light transmitting portion, and the transmittance of the third light transmitting portion was precisely controlled by the irradiation amount of ions. To do. By irradiating the third light transmitting portion shown in FIG. 91 with the ion beam, the light transmittance control region 5 shown in FIG. 92 is obtained.

Example 15 Example 15 is a modification of Example 11. This is different from the eleventh embodiment in that the light transmittances of the eleventh embodiment and the third light transmitting portion can be arbitrarily set by ion beam irradiation.

The manufacturing method will be described below with reference to FIGS. 93 and 94. In Example 15, the structure obtained in Example 7 was further irradiated with an ion beam on the third light transmitting portion, and the transmittance of the third light transmitting portion was precisely controlled by the irradiation amount of ions. To do. By irradiating the third light transmitting portion shown in FIG. 93 with the ion beam, the light transmittance control region 5 shown in FIG. 94 is obtained.

Example 16 Example 16 is a modification of Example 12. It differs from the twelfth embodiment in that the light transmittances of the twelfth embodiment and the third light transmitting portion can be arbitrarily set by ion beam irradiation.

[0068] Hereinafter, FIG. 95 and its manufacturing method will be described with reference to FIG. 96. In Example 16, the structure obtained in Example 8 was further irradiated with an ion beam on the third light transmitting portion, and the transmittance of the third light transmitting portion was precisely controlled by the irradiation amount of ions. To do. By irradiating the third light transmitting portion 21 shown in FIG. 95 with the ion beam, the light transmittance control region 5 shown in FIG. 96 is obtained.

[0069]

As described above, according to the present invention, it is possible to remarkably improve the registration margin in the drawing process using an electron beam or the like as in the conventional edge enhancement method, and to draw with the electron beam or the like as in the conventional auxiliary pattern method. Eliminating the difficulty of line width control in the process, and significantly reducing the defects of the light shielding film as in the conventional halftone method,
Moreover, it is possible to secure a light-shielding band in stepper exposure. Further, by using the method according to the present invention, it is possible to improve the resolution in light exposure and also improve the depth of focus. Further, according to the present invention, it is possible to remarkably improve the yield in the mask production and to significantly reduce the cost.

[Brief description of drawings]

FIG. 1 is a schematic cross-sectional view showing a configuration of a phase shift mask in a first example.

FIG. 2 is a diagram illustrating a method of manufacturing a phase shift mask in Example 1 (1).

3A and 3B are diagrams showing a method of manufacturing the phase shift mask in Example 1 (2).

4A to 4C are diagrams showing a method of manufacturing the phase shift mask in Example 1 (3).

5A to 5D are diagrams showing a method of manufacturing the phase shift mask in Example 1 (4).

6A and 6B are diagrams showing a method for manufacturing a phase shift mask in Example 1 (5).

FIG. 7 is a diagram illustrating the manufacturing method of the phase shift mask in Example 1 (6).

FIG. 8 is a diagram showing the method of manufacturing the phase shift mask in Example 1 (7).

FIG. 9 is a diagram illustrating the manufacturing method of the phase shift mask in Example 1 (8).

FIG. 10 is a diagram illustrating the manufacturing method of the phase shift mask in the second embodiment (1).

FIG. 11 is a diagram illustrating the manufacturing method of the phase shift mask in the second embodiment (2).

FIG. 12 is a diagram illustrating the manufacturing method of the phase shift mask in the second embodiment (3).

FIG. 13 is a diagram illustrating the manufacturing method of the phase shift mask in the second embodiment (4).

FIG. 14 is a diagram illustrating a method for manufacturing a phase shift mask in the second embodiment (5).

FIG. 15 is a diagram illustrating the manufacturing method of the phase shift mask in the second embodiment (6).

FIG. 16 is a diagram showing a method of manufacturing a phase shift mask in Example 2 (7).

FIG. 17 is a diagram illustrating the manufacturing method of the phase shift mask in Example 3 (1).

FIG. 18 is a diagram illustrating the manufacturing method of the phase shift mask in Example 3 (2).

FIG. 19 is a diagram illustrating the manufacturing method of the phase shift mask in Example 3 (3).

FIG. 20 is a diagram illustrating the manufacturing method of the phase shift mask in Example 3 (4).

FIG. 21 is a diagram illustrating the manufacturing method of the phase shift mask in Example 3 (5).

FIG. 22 is a diagram showing the method of manufacturing the phase shift mask in Example 3 (6).

FIG. 23 is a diagram illustrating the manufacturing method of the phase shift mask in Example 4 (1).

FIG. 24 is a diagram illustrating the method for manufacturing the phase shift mask in the fourth example (2).

FIG. 25 is a diagram illustrating the manufacturing method of the phase shift mask in Example 4 (3).

FIG. 26 is a diagram illustrating the manufacturing method of the phase shift mask in Example 4 (4).

FIG. 27 is a diagram illustrating the manufacturing method of the phase shift mask in Example 4 (5).

FIG. 28 is a diagram illustrating the manufacturing method of the phase shift mask in Example 4 (6).

FIG. 29 is a schematic cross-sectional view showing the configuration of the phase shift mask in the fifth example.

FIG. 30 is a diagram illustrating the manufacturing method of the phase shift mask in Example 5 (1).

FIG. 31 is a diagram illustrating the manufacturing method of the phase shift mask in Example 5 (2).

FIG. 32 is a diagram illustrating the manufacturing method of the phase shift mask in Example 5 (3).

FIG. 33 is a diagram illustrating the manufacturing method of the phase shift mask in the fifth example (4).

FIG. 34 is a diagram illustrating the method of manufacturing the phase shift mask in the fifth example (5).

FIG. 35 is a diagram showing the manufacturing method of the phase shift mask in Example 5 (6).

FIG. 36 is a diagram illustrating the manufacturing method of the phase shift mask in Example 5 (7).

FIG. 37 is a diagram illustrating the manufacturing method of the phase shift mask in Example 6 (1).

FIG. 38 is a diagram illustrating the manufacturing method of the phase shift mask in Example 6 (2).

FIG. 39 is a diagram illustrating the manufacturing method of the phase shift mask in Example 6 (3).

FIG. 40 is a diagram illustrating the manufacturing method of the phase shift mask in Example 6 (4).

FIG. 41 is a diagram illustrating a method for manufacturing a phase shift mask in Example 6 (5).

FIG. 42 is a diagram illustrating the method of manufacturing the phase shift mask in the sixth example (6).

FIG. 43 is a diagram illustrating the manufacturing method of the phase shift mask in Example 6 (7).

FIG. 44 is a diagram illustrating the manufacturing method of the phase shift mask in Example 7 (1).

45A and 45B are diagrams showing a method for manufacturing a phase shift mask in Example 7 (2).

FIG. 46 is a diagram showing the manufacturing method of the phase shift mask in Example 7 (3).

FIG. 47 is a diagram illustrating the manufacturing method of the phase shift mask in Example 7 (4).

FIG. 48 is a diagram illustrating the manufacturing method of the phase shift mask in Example 7 (5).

FIG. 49 is a diagram showing the manufacturing method of the phase shift mask in Example 7 (6).

FIG. 50 is a diagram showing the manufacturing method of the phase shift mask in Example 8 (1).

FIG. 51 is a diagram illustrating the method of manufacturing the phase shift mask in Example 8 (2).

52A and 52B are diagrams showing a method of manufacturing a phase shift mask in Example 8 (3).

FIG. 53 is a diagram illustrating the method of manufacturing the phase shift mask in Example 8 (4).

54A and 54B are diagrams showing the method of manufacturing the phase shift mask in Example 8 (5).

FIG. 55 is a diagram illustrating the manufacturing method of the phase shift mask in Example 8 (6).

FIG. 56 is a schematic cross-sectional view showing the configuration of the phase shift mask in Example 9.

FIG. 57 is a diagram showing the manufacturing method of the phase shift mask in Example 9 (1).

FIG. 58 is a diagram illustrating the manufacturing method of the phase shift mask in Example 9 (2).

FIG. 59 is a diagram illustrating the manufacturing method of the phase shift mask in Example 9 (3).

FIG. 60 is a diagram illustrating the manufacturing method of the phase shift mask in Example 9 (4).

FIG. 61 is a diagram illustrating the manufacturing method of the phase shift mask in Example 9 (5).

FIG. 62 is a diagram showing the method of manufacturing the phase shift mask in Example 9 (6).

FIG. 63 is a diagram showing the method of manufacturing the phase shift mask in Example 9 (7).

FIG. 64 is a diagram illustrating the manufacturing method of the phase shift mask in Example 10 (1).

FIG. 65 is a diagram illustrating the manufacturing method of the phase shift mask in the tenth example (2).

FIG. 66 is a diagram showing the manufacturing method of the phase shift mask in Example 10 (3).

FIG. 67 is a diagram illustrating the manufacturing method of the phase shift mask in the tenth example (4).

FIG. 68 is a diagram illustrating a method for manufacturing a phase shift mask in the tenth example (5).

FIG. 69 is a diagram illustrating the manufacturing method of the phase shift mask in the tenth example (6).

FIG. 70 is a diagram illustrating the manufacturing method of the phase shift mask in Example 10 (7).

FIG. 71 is a diagram illustrating the manufacturing method of the phase shift mask in Example 11 (1).

72A and 72B are diagrams showing a method for manufacturing a phase shift mask in Example 11 (2).

FIG. 73 is a diagram illustrating the manufacturing method of the phase shift mask in Example 11 (3).

FIG. 74 is a diagram showing the manufacturing method of the phase shift mask in Example 11 (4).

FIG. 75 is a diagram illustrating the manufacturing method of the phase shift mask in Example 11 (5).

FIG. 76 is a diagram showing the manufacturing method of the phase shift mask in Example 11 (6).

FIG. 77 is a diagram illustrating the manufacturing method of the phase shift mask in Example 11 (7).

FIG. 78 is a diagram showing the manufacturing method of the phase shift mask in Example 11 (8).

FIG. 79 is a diagram illustrating the manufacturing method of the phase shift mask in Example 11 (9).

FIG. 80 is a diagram illustrating the manufacturing method of the phase shift mask in Example 12 (1).

FIG. 81 is a diagram illustrating a method of manufacturing a phase shift mask in Example 12 (2).

FIG. 82 is a diagram illustrating the manufacturing method of the phase shift mask in Example 12 (3).

FIG. 83 is a diagram illustrating the manufacturing method of the phase shift mask in Example 12 (4).

FIG. 84 is a diagram illustrating the manufacturing method of the phase shift mask in Example 12 (5).

FIG. 85 is a diagram showing the manufacturing method of the phase shift mask in Example 12 (6).

FIG. 86 is a diagram illustrating the manufacturing method of the phase shift mask in Example 12 (7).

FIG. 87 is a diagram showing the manufacturing method of the phase shift mask in Example 12 (8).

FIG. 88 is a diagram illustrating the manufacturing method of the phase shift mask in Example 12 (9).

FIG. 89 is a diagram illustrating the manufacturing method of the phase shift mask in Example 13 (1).

FIG. 90 is a diagram illustrating the manufacturing method of the phase shift mask in the thirteenth embodiment (2).

FIG. 91 is a diagram illustrating the manufacturing method of the phase shift mask in the fourteenth embodiment (1).

FIG. 92 is a diagram showing the manufacturing method of the phase shift mask in Example 14 (2).

FIG. 93 is a diagram showing the manufacturing method of the phase shift mask in Example 15 (1).

FIG. 94 is a diagram showing the manufacturing method of the phase shift mask in Example 15 (2).

FIG. 95 is a diagram showing the manufacturing method of the phase shift mask in Example 16 (1).

FIG. 96 is a diagram showing the manufacturing method of the phase shift mask in Example 16 (2).

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 transparent substrate 2 light-shielding film 3 resist 4 phase shift layer 5 ion beam transmittance control region 6 antistatic film 10 light transmission part 11 phase shift part (phase shift material part) 20 Light transmitting portion 21 Third light transmitting portion drawing area having a different transmittance from the light transmitting portion

Claims (10)

(57) [Claims] 1. A first region having a light-shielding region and a width for exposing a light-sensitive composition to be exposed to light to form a desired pattern.
And a second light-transmitting portion formed between the first light-transmitting portion and the light-shielding region, wherein the light transmittance of the second light-transmitting portion is greater than 0 and is not covered. A phase shift portion which is small enough not to expose the photosensitive composition to light and has a phase different from that of the first light transmitting portion and in which the phase of the second light transmitting portion is the second light transmitting portion. A part of the shift part is provided with a third part having the same phase as that of the first light transmitting part, and the light transmittance of the third part is equal to the light transmittance of the first light transmitting part; The third portion forms an auxiliary pattern having a width smaller than that of the first light transmitting portion, and the third portion
The light transmitted through the part of the
A phase shift mask characterized in that it interferes with light transmitted through a portion . 2. A first region having a light-shielding region and a width for exposing a light-sensitive composition to be exposed to light to form a desired pattern.
And a second light-transmitting portion formed between the first light-transmitting portion and the light-shielding region, wherein the light transmittance of the second light-transmitting portion is greater than 0 and is not covered. A phase shift portion which is small enough not to expose the photosensitive composition to light and has a phase different from that of the first light transmitting portion and in which the phase of the second light transmitting portion is the second light transmitting portion. A part of the shift part is provided with a third part having the same phase as the first light transmitting part, and the light transmittance of the third part is equal to the light transmittance of the second light transmitting part; The third portion forms an auxiliary pattern having a width smaller than that of the first light transmitting portion, and the third portion
The light transmitted through the part of the
A phase shift mask characterized in that it interferes with light transmitted through a portion . 3. A first region having a light-shielding region and a width for exposing a light-sensitive composition to be exposed to light to form a desired pattern.
And a second light-transmitting portion formed between the first light-transmitting portion and the light-shielding region, wherein the second light-transmitting portion has a light transmittance greater than 0 and is not covered. A phase shift portion which is small enough not to expose the photosensitive composition to light and has a phase different from that of the first light transmitting portion and in which the phase of the second light transmitting portion is the second light transmitting portion. a portion of the shift portion, provided with a third portion where the first light transmitting portion and the phase is equal, and the light transmittance of the portion of said third and greater than the light transmittance of the second light transmitting portion first 1 is smaller than the light transmitting portion, and the third portion forms an auxiliary pattern having a width smaller than the width of the first light transmitting portion, and the light transmitted through the third portion is
The light transmitted through the phase shift portion, which is the second light transmitting portion, and
Phase shift mask, characterized in that it is intended to Wataru. 4. A first region having a light-shielding region and a width for exposing a light-sensitive composition to be exposed to light to form a desired pattern.
And a second light-transmitting portion formed between the first light-transmitting portion and the light-shielding region, wherein the light transmittance of the second light-transmitting portion is greater than 0 and is not covered. A phase shift portion which is small enough not to expose the photosensitive composition to light and has a phase different from that of the first light transmitting portion and in which the phase of the second light transmitting portion is the second light transmitting portion. A third portion having the same phase as the first light transmitting portion is provided in a part of the shift portion, and the light transmittance of the third portion controls the light transmittance of the corresponding portion in the substrate. The third portion has an auxiliary pattern having a width smaller than the width of the first light transmitting portion and the third portion is set to a desired amount .
The light that has passed through the minute part is the phase shift part that is the second light transmitting part.
A phase shift mask which is characterized in that it interferes with light transmitted through . 5. A first region having a light-shielding region and a width for exposing a light-sensitive composition to be exposed to light to form a desired pattern.
And a second light-transmitting portion formed between the first light-transmitting portion and the light-shielding region, wherein the light transmittance of the second light-transmitting portion is greater than 0 and is not covered. A phase shift portion which is small enough not to expose the photosensitive composition to light and has a phase different from that of the first light transmitting portion and in which the phase of the second light transmitting portion is the second light transmitting portion. A third portion having the same phase as that of the first light transmitting portion is provided in a part of the shift portion, and the light transmittance of the third portion is equal to the light transmittance of the corresponding film formed on the substrate. It is set to a desired amount by controlling, and the third portion forms an auxiliary pattern having a width smaller than the width of the first light transmitting portion, and
The light transmitted through the third part is the phase shift which is the second light transmitting part.
A phase shift mask, which is characterized by interfering with the light transmitted through the mask portion. 6. A first region having a light-shielding region and a width for exposing a light-sensitive composition to be exposed to light to form a desired pattern.
And a second light-transmitting portion formed between the first light-transmitting portion and the light-shielding region, wherein the light transmittance of the second light-transmitting portion is greater than 0 and is not covered. A phase shift portion which is small enough not to expose the photosensitive composition to light and has a phase different from that of the first light transmitting portion and in which the phase of the second light transmitting portion is the second light transmitting portion. A part of the shift part is provided with a third part having the same phase as that of the first light transmitting part, and the light transmittance of the third part is equal to the light transmittance of the first light transmitting part; The third portion forms an auxiliary pattern having a width smaller than that of the first light transmitting portion, and the third portion
The light transmitted through the part of the
An exposure method characterized by performing exposure using a phase shift mask that interferes with light transmitted through a portion . 7. A first region having a light-shielding region and a width for exposing a light-sensitive composition to be exposed to light to form a desired pattern.
And a second light-transmitting portion formed between the first light-transmitting portion and the light-shielding region, wherein the light transmittance of the second light-transmitting portion is greater than 0 and is not covered. A phase shift portion which is small enough not to expose the photosensitive composition to light and has a phase different from that of the first light transmitting portion and in which the phase of the second light transmitting portion is the second light transmitting portion. A part of the shift part is provided with a third part having the same phase as the first light transmitting part, and the light transmittance of the third part is equal to the light transmittance of the second light transmitting part; The third portion forms an auxiliary pattern having a width smaller than that of the first light transmitting portion, and the third portion
The light transmitted through the part of the
An exposure method characterized by performing exposure using a phase shift mask that interferes with light transmitted through a portion . 8. A first region having a light-shielding region and a width for exposing a light-sensitive composition to be exposed to light to form a desired pattern.
And a second light-transmitting portion formed between the first light-transmitting portion and the light-shielding region, wherein the light transmittance of the second light-transmitting portion is greater than 0 and is not covered. A phase shift portion which is small enough not to expose the photosensitive composition to light and has a phase different from that of the first light transmitting portion and in which the phase of the second light transmitting portion is the second light transmitting portion. a portion of the shift portion, provided with a third portion where the first light transmitting portion and the phase is equal, and the light transmittance of the portion of said third and greater than the light transmittance of the second light transmitting portion first 1 is smaller than the light transmitting portion, and the third portion forms an auxiliary pattern having a width smaller than the width of the first light transmitting portion, and the light transmitted through the third portion is
The light transmitted through the phase shift portion, which is the second light transmitting portion, and
Exposure method characterized in that exposure is performed using the phase shift mask is to Wataru. 9. A first region having a light-shielding region and a width for exposing a light-sensitive composition to be exposed to light to form a desired pattern.
And a second light-transmitting portion formed between the first light-transmitting portion and the light-shielding region, wherein the light transmittance of the second light-transmitting portion is greater than 0 and is not covered. A phase shift portion which is small enough not to expose the photosensitive composition to light and has a phase different from that of the first light transmitting portion and in which the phase of the second light transmitting portion is the second light transmitting portion. A third portion having the same phase as the first light transmitting portion is provided in a part of the shift portion, and the light transmittance of the third portion controls the light transmittance of the corresponding portion in the substrate. The third portion has an auxiliary pattern having a width smaller than the width of the first light transmitting portion and the third portion is set to a desired amount .
The light that has passed through the minute part is the phase shift part that is the second light transmitting part.
An exposure method characterized in that exposure is performed using a phase shift mask that interferes with the light that has passed through . 10. A light-shielding region, a first light-transmitting portion having a width for exposing a light-sensitive composition to be exposed to form a desired pattern, and the first light-transmitting portion and the light-shielding region. A second light-transmitting portion formed between the second light-transmitting portion and the second light-transmitting portion having a light transmittance greater than 0 and small enough not to expose the exposed photosensitive composition, and the second light-transmitting portion. A phase shift part having a phase different from that of the first light transmission part, and a part of the phase shift part which is the second light transmission part has a phase equal to that of the first light transmission part. And the light transmittance of the third portion is set to a desired amount by controlling the light transmittance of a corresponding film formed on the substrate. The portion forms an auxiliary pattern having a width smaller than the width of the first light transmitting portion, and
The light transmitted through the third part is the phase shift which is the second light transmitting part.
The exposure method is characterized in that the exposure is performed using a phase shift mask that interferes with the light that has passed through the beam portion .