JP3495121B2 - Cleaning method and apparatus - Google Patents
Cleaning method and apparatusInfo
- Publication number
- JP3495121B2 JP3495121B2 JP00090495A JP90495A JP3495121B2 JP 3495121 B2 JP3495121 B2 JP 3495121B2 JP 00090495 A JP00090495 A JP 00090495A JP 90495 A JP90495 A JP 90495A JP 3495121 B2 JP3495121 B2 JP 3495121B2
- Authority
- JP
- Japan
- Prior art keywords
- cleaning
- tank
- liquid
- frequency
- ultrasonic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- Cleaning By Liquid Or Steam (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Description
【0001】[0001]
【産業上の利用分野】本発明は、洗浄方法及び装置に係
わり、例えば機械油の脱脂等に代表される一般洗浄から
超精密な高清浄度を要求される半導体製造プロセスのウ
ェット処理まで、あらゆるウェット洗浄処理に好適に適
用される。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a cleaning method and apparatus, for example, from general cleaning represented by degreasing of machine oil to wet processing in a semiconductor manufacturing process which requires ultra-precision and high cleanliness. It is suitable for wet cleaning.
【0002】[0002]
【関連技術】従来、例えば半導体製造のウェットプロセ
スにおいて、半導体基板の薬液洗浄あるいはその後の超
純水リンス洗浄を行う場合、薬液洗浄槽においては超音
波振動素子は処理槽の底部に配置され、上蓋は単に薬液
蒸気やミストを逃散を防止する目的で設置されていた。
また、リンス槽においては、通常上蓋を用いずに洗浄処
理されていた。2. Description of the Related Art Conventionally, for example, in a wet process of semiconductor manufacturing, when a semiconductor substrate is subjected to chemical cleaning or subsequent ultrapure water rinsing cleaning, the ultrasonic vibration element is disposed at the bottom of the processing tank in the chemical cleaning tank, and the top lid is Was installed solely to prevent the escape of chemical vapors and mists.
Moreover, in the rinse tank, the washing process is usually performed without using the upper lid.
【0003】しかし、本発明者らが、より高性能な半導
体デバイスの開発のために洗浄方法を見直す過程で、大
気から洗浄液に混入する酸素ガス等が洗浄不良を起こし
たり、酸化膜を形成したりして、デバイスの特性を低下
させることが分かった。即ち、洗浄液を大気から完全に
遮断しなければならないことを初めて知得したのであ
る。 また、従来からウェット処理システムで使用され
ているオーバーフロー型処理槽を用いて、液面側からの
超音波を照射しようとすると、超音波から発生する直進
流(上から下への流れ)とオーバーフロー型処理槽内の
液中流れ(下から上への流れ)とがお互いに阻害して十
分な効果が得られないことも見い出した。また、これを
避けるために、側面からの超音波照射も考えられるが液
中流れの阻害に加えて、キャリヤ等の洗浄治具によって
超音波が遮られてしまうという欠点がある。本発明は、
これらの知見に基づいて完成したものである。However, in the process of reviewing the cleaning method by the present inventors to develop a higher performance semiconductor device, oxygen gas mixed in the cleaning liquid from the atmosphere causes cleaning failure or forms an oxide film. It has been found that the characteristics of the device are degraded. That is, for the first time, we learned that the cleaning liquid must be completely shielded from the atmosphere. In addition, if you try to irradiate ultrasonic waves from the liquid surface side using the overflow type processing tank that has been used in the conventional wet processing system, a straight flow (flow from top to bottom) and overflow generated from the ultrasonic waves will occur. It was also found that the in-liquid flow (flow from the bottom to the top) in the mold treatment tank interferes with each other and a sufficient effect cannot be obtained. Further, in order to avoid this, irradiation of ultrasonic waves from the side surface can be considered, but in addition to obstructing the flow in the liquid, there is a drawback that the ultrasonic waves are blocked by a cleaning jig such as a carrier. The present invention is
It was completed based on these findings.
【0004】[0004]
【発明が解決しようとする課題】本発明は、洗浄処理が
極めて短時間で済み、しかも洗浄効果の高い洗浄方法及
び装置を提供することを目的とする。SUMMARY OF THE INVENTION It is an object of the present invention to provide a cleaning method and apparatus which requires a very short cleaning time and has a high cleaning effect.
【0005】[0005]
【課題を解決するための手段】本発明の第1の要旨は、
洗浄槽の上から下に均一な洗浄液の流れを形成し、該洗
浄槽の上部から、前記洗浄槽内に設置した被洗浄物に向
けて超音波を照射して洗浄を行うことを特徴とする洗浄
方法に存在する。本発明の第2の要旨は、槽の上から下
に均一な洗浄液の流れを形成する引き抜き式洗浄槽と、
該洗浄液を大気と遮断するための上蓋と、該上蓋に配設
した超音波振動素子とを有し、前記洗浄槽内に設置した
被洗浄物に向けて前記洗浄液を下方に流しながら、超音
波を下方に照射して被洗浄物を洗浄することを特徴とす
る洗浄装置に存在する。The first gist of the present invention is as follows.
A uniform flow of the cleaning liquid is formed from the top to the bottom of the cleaning tank, and ultrasonic waves are irradiated from the upper part of the cleaning tank toward the object to be cleaned installed in the cleaning tank for cleaning. Exists in the cleaning method. A second gist of the present invention is a drawing-type cleaning tank for forming a uniform cleaning liquid flow from the top to the bottom of the tank,
The ultrasonic cleaning device has an upper lid for shutting off the cleaning liquid from the atmosphere, and an ultrasonic vibrating element arranged on the upper lid. While the cleaning liquid is allowed to flow downward toward an object to be cleaned installed in the cleaning tank, ultrasonic waves are applied. Is present in the downward direction to wash the article to be washed.
【0006】[0006]
【作用】本発明は、洗浄槽上部に超音波発振部を設置し
て下方に超音波を照射し、かつ引き抜き方法により洗浄
液の下方向への流れを形成することにより、超音波の直
進流効果との相乗効果により、洗浄槽内の洗浄液の均一
な下方向へ流れが促進され、同時に超音波により、水分
子の水素結合が切れ、水クラスターの大きさ・粘度が低
減される結果、洗浄効果が大きく向上するものと考えら
れる。その結果、薬液洗浄あるいは超純水リンス時間の
短縮と、超純水使用量の低減とを図ることができる。According to the present invention, the ultrasonic wave oscillating section is installed on the upper part of the cleaning tank to irradiate the ultrasonic wave downward, and the downward flow of the cleaning liquid is formed by the extracting method, so that the ultrasonic wave has a straight flow effect. The synergistic effect with and promotes a uniform downward flow of the cleaning liquid in the cleaning tank, and at the same time ultrasonic waves break the hydrogen bonds of water molecules, reducing the size and viscosity of the water clusters. Is expected to improve significantly. As a result, it is possible to shorten the chemical cleaning or ultrapure water rinsing time and reduce the amount of ultrapure water used.
【0007】また、本発明においては、洗浄槽に上蓋を
設置したため大気からの酸素の混入を根絶した環境で基
板の薬液洗浄及びリンスを行うことが可能となる。この
ため、薬液洗浄及びリンス工程中での酸化膜の形成が完
全に抑制されるとともに洗浄むらをなくすことができ
る。特に、半導体基板の場合、超音波の周波数を0.8
〜10MHzとするのが好ましい。この範囲の周波数で
は水中の水素結合を切ることにより、水素ラジカルが発
生し、これが基板をアタックしてTOCの低減ができ
る。また水クラスターも小さくなるため、粘度等の物性
も変わる。さらに振動加速による極微細パーティクルの
除去が促進されため、半導体デバイスの製造工程におけ
る例えばホール、トレンチ等極微細パターン内への液浸
透が促進されて洗浄及び薬液処理等がより完全に行え
る。従って、デバイスの特性及びパターン精度等が向上
し、より一層高性能なデバイスを実現することが可能と
なる。Further, in the present invention, since the upper lid is installed in the cleaning tank, it becomes possible to perform the chemical cleaning and the rinsing of the substrate in an environment in which the mixing of oxygen from the atmosphere is eliminated. For this reason, the formation of an oxide film during the chemical cleaning and rinsing steps can be completely suppressed, and uneven cleaning can be eliminated. Especially in the case of a semiconductor substrate, the ultrasonic frequency is set to 0.8.
It is preferably set to 10 MHz. At frequencies in this range, hydrogen radicals are generated by breaking hydrogen bonds in water, which attack the substrate and can reduce TOC. Moreover, since the water clusters also become smaller, physical properties such as viscosity also change. Further, since the removal of the ultrafine particles by the acceleration of vibration is promoted, the liquid permeation into the ultrafine patterns such as holes and trenches in the manufacturing process of the semiconductor device is promoted, so that the cleaning and the chemical treatment can be performed more completely. Therefore, the device characteristics, pattern accuracy, and the like are improved, and it becomes possible to realize a device with higher performance.
【0008】但し、それほど微細パターンのない通常の
洗浄においては、超音波の周波数として、10KHz〜
800KHzが好適に用いられる。本発明において、前
記洗浄液中の溶存ガスを取り除いく方法としては、例え
ばUF(限外ろ過)膜の一方を真空にして他方の洗浄液
中の溶存ガスを抜き出す方法が簡便であり、好適に用い
られる。これに限らず、洗浄液を減圧中に噴霧して溶存
ガスを追い出す方法を用いても良い。However, in the normal cleaning without a very fine pattern, the frequency of ultrasonic waves is from 10 KHz to
800 KHz is preferably used. In the present invention, as a method for removing the dissolved gas in the cleaning liquid, for example, a method in which one of the UF (ultrafiltration) membranes is evacuated to extract the dissolved gas in the other cleaning liquid is simple and preferably used. . The method is not limited to this, and a method of ejecting the dissolved gas by spraying the cleaning liquid under reduced pressure may be used.
【0009】また、本発明においては、超音波振動素子
を洗浄液を大気と遮断するための上蓋に取り付けてある
が、超音波を上方から下方に照射できれさえすれば、例
えば洗浄槽本体上部に配設しても良い。上蓋開閉時に
は、洗浄液は大気と接触するため、短時間であっても大
気と接触しないようにするのが好ましい。このために
は、洗浄槽の上部に、不活性ガスの噴出口を設け、不活
性ガスのエアーカーテンを形成しシールすることができ
る。不活性ガスとしては、不純物1ppb以下のN2ガ
スあるいはArガス等が好適に用いられる。Further, in the present invention, the ultrasonic vibrating element is attached to the upper lid for shutting off the cleaning liquid from the atmosphere. However, as long as the ultrasonic wave can be irradiated from the upper side to the lower side, for example, the upper part of the cleaning tank main body can be provided. You may arrange. Since the cleaning liquid comes into contact with the atmosphere when opening and closing the upper lid, it is preferable not to contact the atmosphere even for a short time. For this purpose, an inert gas ejection port can be provided in the upper part of the cleaning tank to form and seal an inert gas air curtain. As the inert gas, N 2 gas or Ar gas having impurities of 1 ppb or less is preferably used.
【0010】本発明は、シリコンウエハ等の半導体基
板、または薄膜トランジスタ基板等の薄膜半導体基板に
たいする希フッ化水素酸洗浄または希フッ化水素酸洗浄
後の超純水リンス洗浄に最適である。The present invention is most suitable for dilute hydrofluoric acid cleaning or ultrapure water rinse cleaning after dilute hydrofluoric acid cleaning of a semiconductor substrate such as a silicon wafer or a thin film semiconductor substrate such as a thin film transistor substrate.
【0011】[0011]
【実施例】以下に実施例を挙げて本発明をより具体的に
説明するが、本発明がこれら実施例に限定されることは
ない。
(実施例1及び2)図1に本発明の洗浄槽の一例を示
す。The present invention will be described in more detail with reference to the following examples, but the present invention is not limited to these examples. (Examples 1 and 2) FIG. 1 shows an example of the cleaning tank of the present invention.
【0012】図1は、フッ化水素酸洗浄後のリンス洗浄
に用いるリンス洗浄槽であり、従来のオーバーフローと
は異なり、洗浄液を下方に流す引き抜き方式の槽構造を
なし、洗浄物の出し入れに伴い、自動的な上下スライド
方式により開閉を行う上蓋を有している。その上蓋下部
に超音波振動素子を配置し、洗浄槽の上方向から超音波
を照射することが可能な洗浄槽である。FIG. 1 shows a rinse cleaning tank used for rinse cleaning after hydrofluoric acid cleaning, and unlike a conventional overflow, it has a drawing-out type tank structure in which a cleaning solution is flown downward, and is used as a cleaning material is put in and taken out. , It has an upper lid that opens and closes by an automatic vertical slide system. This is a cleaning tank in which an ultrasonic vibration element is arranged under the upper lid and ultrasonic waves can be emitted from above the cleaning tank.
【0013】図1において、100は洗浄槽本体、10
1は超音波振動素子を内蔵した自動開閉機構付き上蓋、
102は超音波振動素子、103は圧力分散制御板、1
04はシリコンウエハ、105はウエハキャリア、10
6は上蓋開時に液面をN2ガスで覆い、大気と遮断する
ためのN2ガスシール用パイプ、107は給水量制御バ
ルブ、108は排水量制御バルブ、109はUF脱気膜
装置である。In FIG. 1, reference numeral 100 denotes a cleaning tank main body and 10
1 is a top lid with an automatic opening and closing mechanism that has a built-in ultrasonic vibration element,
102 is an ultrasonic vibration element, 103 is a pressure dispersion control plate, 1
04 is a silicon wafer, 105 is a wafer carrier, 10
Reference numeral 6 is a pipe for N 2 gas sealing for covering the liquid surface with N 2 gas when the upper lid is opened to shut off from the atmosphere, 107 is a water supply amount control valve, 108 is a drainage amount control valve, and 109 is a UF degassing device.
【0014】107、108の流量制御バルブで、給水
・排水量を同一に制御すると、液面レベルは一定に保た
れる。この一定液面上に、槽の周囲に配置されたN2ガ
スシール用パイプ106から噴出したN2ガスにより、
液面上がN2ガスで覆われるため、上蓋が開いた状態で
も大気中のO2ガス等の混入が防止される。なお、圧力
分散制御板103は、液中の流れを層流にすることを目
的として配置したものである。When the flow control valves 107 and 108 control the amounts of water supply and drainage to be the same, the liquid level is kept constant. This constant liquid surface, the N 2 gas ejected from the N 2 gas seal pipe 106 disposed around the vessel,
Since the liquid surface is covered with N 2 gas, mixing of O 2 gas in the atmosphere is prevented even when the upper lid is open. The pressure dispersion control plate 103 is arranged for the purpose of making the flow in the liquid a laminar flow.
【0015】超音波振動素子102を内蔵した上蓋10
1が閉まる直前にN2ガスシール用パイプ106からの
N2ガスの噴出は停止され、上蓋101は直接液面に接
触した後、超音波振動素子102を作動して、超音波を
照射する。上蓋101は、ウエハキャリアの出し入れに
伴い、自動的に開閉される。超純水を給水する場合、通
常超純水中には溶存酸素を防ぐ目的でN2等の不活性ガ
スが飽和近くまで混入されている。このような水質の超
純水にメガソニックを照射すると、液中のN2等の不活
性ガスが脱気され、水中で気泡となり、ウエハに付着し
洗浄むらを起こすなど悪影響があるので、これを防ぐた
めの脱気装置109でN2等の不活性ガスを除去する。
なお、この脱気装置は、UFモジュールに真空ポンプを
組みあわせたもので、脱気効果に加え、パーティクル除
去効果も有する。An upper lid 10 having a built-in ultrasonic vibration element 102
Immediately before 1 is closed, the ejection of N 2 gas from the N 2 gas sealing pipe 106 is stopped, the upper lid 101 directly contacts the liquid surface, and then the ultrasonic vibration element 102 is operated to irradiate ultrasonic waves. The upper lid 101 is automatically opened and closed as the wafer carrier is taken in and out. When ultrapure water is supplied, an inert gas such as N 2 is usually mixed in the ultrapure water up to near saturation in order to prevent dissolved oxygen. When megasonic is irradiated to such ultrapure water, the inert gas such as N 2 in the liquid is degassed to form bubbles in the water, and there is an adverse effect such as adhesion to the wafer and uneven cleaning. An inert gas such as N 2 is removed by a deaerator 109 for preventing the above.
This deaeration device is a combination of a UF module and a vacuum pump, and has a particle removal effect in addition to a deaeration effect.
【0016】尚、本実施例の超音波振動素子102は、
周波数950kHz、最大出力は300Wの振動素子で
ある。0.5%フッ化水素酸で処理した後に、ウェハー
にスプレーシャワー処理を行い、続いて図1の洗浄槽で
超純水リンスを行った。この時、リンス排液の比抵抗値
が元の超純水の比抵抗値(18.2MΩ・cm)に戻る
までの時間と超純水の流量との関係について調べた結果
を表1に示す。The ultrasonic vibrating element 102 of this embodiment is
The vibration element has a frequency of 950 kHz and a maximum output of 300 W. After the treatment with 0.5% hydrofluoric acid, the wafer was subjected to a spray shower treatment, and then rinsed with ultrapure water in the cleaning tank shown in FIG. At this time, Table 1 shows the results obtained by examining the relationship between the time required for the resistivity of the rinse waste liquid to return to the original resistivity of ultrapure water (18.2 MΩ · cm) and the flow rate of ultrapure water. .
【0017】尚、比較のために、図1でUF脱気膜装置
109で脱気処理をしてない超純水を用いた場合(実施
例2)、図1でメガソニックを照射しない場合(比較例
1)、図2に示す従来のオーバーフロー型で、超音波振
動素子を洗浄槽の底に配した洗浄装置を用いて洗浄した
場合(比較例2)、及び図2でメガソニックを照射しな
い場合(比較例3)についても同様の実験を行った。こ
れら比較例の結果も併せて表1にまとめた。For comparison, when ultrapure water that has not been degassed by the UF degassing apparatus 109 in FIG. 1 is used (Example 2), and when megasonic is not irradiated in FIG. Comparative Example 1), when the conventional overflow type shown in FIG. 2 is used for cleaning using a cleaning device in which an ultrasonic transducer is arranged at the bottom of the cleaning tank (Comparative Example 2), and no megasonic irradiation is performed in FIG. The same experiment was performed for the case (Comparative Example 3). The results of these comparative examples are also summarized in Table 1.
【0018】[0018]
【表1】
表1から明らかなように、リンス洗浄時にメガソニック
を照射し、洗浄液を上から下へ流す本実施例の洗浄装置
を用いることにより、超純水リンスの処理時間を大幅に
短縮できできることが分かる。また、超純水中の溶存ガ
スを除去することにより、処理時間を一層短縮すること
ができる。即ち、超純水の使用量を低減でき、洗浄のラ
ンニングコストを下げることも可能となる。[Table 1] As is apparent from Table 1, it is understood that the treatment time of ultrapure water rinsing can be greatly shortened by using the cleaning apparatus of the present embodiment in which megasonic is irradiated during the rinse cleaning and the cleaning liquid is flown from top to bottom. . Further, the treatment time can be further shortened by removing the dissolved gas in the ultrapure water. That is, the amount of ultrapure water used can be reduced, and the running cost for cleaning can be reduced.
【0019】次に、図1の洗浄装置を用い、UF型脱気
装置とメガソニックの微粒子洗浄効果を調べた。結果を
表2に示す。尚、ここでは、市水の微粒子,SiO2ラ
テックス微粒子、ポリスチレンラテックス微粒子を故意
に付着させてサンプルを作製し洗浄効果を確認した。Next, using the cleaning apparatus of FIG. 1, the effect of cleaning the fine particles of the UF type deaerator and megasonic was examined. The results are shown in Table 2. Here, the cleaning effect was confirmed by intentionally adhering fine particles of city water, fine particles of SiO 2 latex, and fine particles of polystyrene latex to prepare a sample.
【0020】[0020]
【表2】
表2が示すように、メガソニックのパーティクル除去効
果は大きく、UF脱気装置を併用することにより、その
効果はより一層向上することが分かった。[Table 2] As shown in Table 2, it was found that the effect of megasonic particle removal is large, and that the effect is further improved by using the UF deaerator together.
【0021】(実施例3)実施例1の洗浄装置を用い、
超音波振動素子の発振周波数を変えた以外は、実施例1
と同様にしてシリコンウエハのリンス洗浄を行い、リン
ス排液の比抵抗が元の超純水の比抵抗値(18.2MΩ
・cm)に戻るまでの時間と超純水の流量との関係につ
いて調べた。結果を表3に示す。(Example 3) Using the cleaning apparatus of Example 1,
Example 1 except that the oscillation frequency of the ultrasonic transducer was changed.
The silicon wafer is rinsed and rinsed in the same manner as the above.
The relationship between the time required to return to (cm) and the flow rate of ultrapure water was investigated. The results are shown in Table 3.
【0022】[0022]
【表3】
表3が示すように、シリコンウエハの場合は、0.8M
Hz〜10MHzの範囲で洗浄効果がより高いことが分
かる。[Table 3] As shown in Table 3, in the case of a silicon wafer, 0.8M
It can be seen that the cleaning effect is higher in the range of Hz to 10 MHz.
【0023】[0023]
【発明の効果】本発明により、洗浄むらがなくより完全
に不純物を短時間で取り去ることが可能となる。即ち、
より高度な洗浄を、より少ない洗浄液あるいは超純水リ
ンス量で達成することが可能となる。本発明により、半
導体デバイスの製造工程における例えばホール、トレン
チ等極微細パターン内への液浸透が促進されて洗浄及び
薬液処理等がより完全に行えるため、デバイスの特性及
びパターン精度等が向上し、より一層高性能なデバイス
を実現することが可能となる。According to the present invention, impurities can be removed more completely in a short time without uneven cleaning. That is,
It becomes possible to achieve a higher degree of cleaning with a smaller cleaning liquid or a rinse amount of ultrapure water. According to the present invention, for example, holes in the manufacturing process of a semiconductor device, liquid penetration into ultrafine patterns such as trenches is promoted and cleaning and chemical solution treatment can be performed more completely, so the device characteristics and pattern accuracy are improved, It is possible to realize a device with higher performance.
【0024】さらに、各種処理及び洗浄効果の向上、薬
液・リンス液使用量低減等さまざまな効果が得られる。Further, various effects such as improvement of various treatments and cleaning effects and reduction of the amount of chemicals / rinse solutions used can be obtained.
【図1】実施例1のリンス槽を示す概念図である。FIG. 1 is a conceptual diagram showing a rinse tank according to a first embodiment.
【図2】従来のリンス槽を示す概念図である。FIG. 2 is a conceptual diagram showing a conventional rinse tank.
100、200 洗浄槽本体、 101 超音波振動素子内蔵上蓋、 102、202 超音波振動素子、 103 圧力分散制御板、 104、204 シリコンウエハ、 105、205 ウエハキャリア、 106 N2ガスシール用パイプ、 107 給水量制御バルブ、 108 排水量制御バルブ、 109 UF脱気装置。100, 200 Cleaning tank body, 101 Ultrasonic vibrating element built-in lid, 102, 202 Ultrasonic vibrating element, 103 Pressure dispersion control plate, 104, 204 Silicon wafer, 105, 205 Wafer carrier, 106 N 2 gas sealing pipe, 107 Water supply control valve, 108 Drainage control valve, 109 UF deaerator.
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平2−34923(JP,A) 特開 平1−304088(JP,A) 実開 平4−41781(JP,U) 実開 平6−52980(JP,U) 実開 平2−96726(JP,U) 実開 昭63−173389(JP,U) (58)調査した分野(Int.Cl.7,DB名) B08B 3/12 B08B 3/10 H01L 21/304 642 ─────────────────────────────────────────────────── ─── Continuation of the front page (56) Reference JP-A-2-34923 (JP, A) JP-A-1-304088 (JP, A) Actually open 4-41781 (JP, U) Actually open 6- 52980 (JP, U) Actually open 2-96726 (JP, U) Actually open 63-173389 (JP, U) (58) Fields investigated (Int.Cl. 7 , DB name) B08B 3/12 B08B 3 / 10 H01L 21/304 642
Claims (11)
を形成し、該洗浄槽の上部から、前記洗浄槽内に設置し
た被洗浄物に向けて超音波を照射して洗浄を行うことを
特徴とする洗浄方法。1. A uniform cleaning liquid flow is formed from the top to the bottom of a cleaning tank, and ultrasonic cleaning is performed from the upper part of the cleaning tank toward an object to be cleaned installed in the cleaning tank. A cleaning method characterized by the above.
0MHzであることを特徴とする請求項1に記載の洗浄
方法。2. The frequency of the ultrasonic wave is 10 KHz to 1
The cleaning method according to claim 1, wherein the cleaning frequency is 0 MHz.
のであることを特徴とする請求項1または2に記載の洗
浄方法。3. The cleaning method according to claim 1, wherein the cleaning liquid is one from which dissolved gas has been removed.
とを特徴とする請求項1〜3のいずれか1項に記載の洗
浄方法。4. The cleaning method according to claim 1, wherein the cleaning liquid is shielded from the atmosphere.
ッ化水素酸洗浄後の超純水リンス液であり、前記被洗浄
物は半導体または薄膜半導体基板であることを特徴とす
る請求項1〜4のいずれか1項に記載の洗浄方法。5. The cleaning liquid is diluted hydrofluoric acid or ultrapure water rinse liquid after cleaning with diluted hydrofluoric acid, and the cleaning target is a semiconductor or a thin film semiconductor substrate. The cleaning method according to any one of items 1 to 4.
成する引き抜き式洗浄槽と、該洗浄液を大気と遮断する
ための上蓋と、該上蓋に配設した超音波振動素子とを有
し、前記洗浄槽内に設置した被洗浄物に向けて前記洗浄
液を下方に流しながら、超音波を下方に照射して被洗浄
物を洗浄することを特徴とする洗浄装置。6. A pull-out type cleaning tank for forming a uniform cleaning liquid flow from the top to the bottom of the tank, an upper lid for shutting off the cleaning fluid from the atmosphere, and an ultrasonic vibration element arranged on the upper lid. The cleaning apparatus cleans the object to be cleaned by irradiating ultrasonic waves downward while flowing the cleaning liquid downward toward the object to be cleaned installed in the cleaning tank.
〜10MHzであることを特徴とする請求項6に記載の
洗浄装置。7. The frequency of the ultrasonic vibration element is 0.8.
The cleaning device according to claim 6, which has a frequency of 10 MHz.
半導体基板であることを特徴とする請求項7に記載の洗
浄装置。8. The cleaning apparatus according to claim 7, wherein the object to be cleaned is a semiconductor substrate or a thin film semiconductor substrate.
800KHzであることを特徴とする請求項6に記載の
洗浄装置。9. The ultrasonic transducer element has a frequency of 10 to 10.
The cleaning device according to claim 6, wherein the cleaning device has a frequency of 800 KHz.
めの脱ガス装置を配設したことを特徴とする請求項6〜
9のいずれか1項に記載の洗浄装置。10. A degassing device for removing dissolved gas in the cleaning liquid is provided.
9. The cleaning device according to any one of 9 above.
に前記洗浄液が大気と接触しないようにシール用不活性
ガス噴出口を配設したことを特徴とする請求項6〜10
のいずれか1項に記載の洗浄装置。11. The inert gas jetting port for sealing is arranged above the cleaning tank so that the cleaning liquid does not come into contact with the atmosphere when the top lid is opened and closed.
The cleaning device according to any one of 1.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP00090495A JP3495121B2 (en) | 1995-01-06 | 1995-01-06 | Cleaning method and apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP00090495A JP3495121B2 (en) | 1995-01-06 | 1995-01-06 | Cleaning method and apparatus |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH08187476A JPH08187476A (en) | 1996-07-23 |
JP3495121B2 true JP3495121B2 (en) | 2004-02-09 |
Family
ID=11486674
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP00090495A Expired - Fee Related JP3495121B2 (en) | 1995-01-06 | 1995-01-06 | Cleaning method and apparatus |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP3495121B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107413746A (en) * | 2017-08-25 | 2017-12-01 | 北京南轩兴达电子科技有限公司 | Full-automatic LED Wafer Cleaning equipment |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6348157B1 (en) | 1997-06-13 | 2002-02-19 | Tadahiro Ohmi | Cleaning method |
JP4135780B2 (en) * | 1997-08-29 | 2008-08-20 | ユーシーティー株式会社 | Chemical solution metering apparatus and method |
JP4859684B2 (en) * | 2007-01-23 | 2012-01-25 | 大日本スクリーン製造株式会社 | Substrate processing equipment |
CN103480605B (en) * | 2013-09-25 | 2015-12-16 | 无锡市宝禾机械设备有限公司 | A kind of through type supersonic wave cleaning machine |
CN104550114B (en) * | 2014-12-31 | 2016-09-14 | 彩虹(合肥)液晶玻璃有限公司 | A kind of liquid-crystalline glasses overflow brick cleaning means and cleaning method |
JP6281018B1 (en) * | 2017-10-03 | 2018-02-14 | 株式会社シーズ | Ultrasonic cleaning device and method of using the same |
CN116165368A (en) * | 2023-02-20 | 2023-05-26 | 凯珀瑞润滑科技(东台)有限公司 | Moisture detection device is used in lubricating oil production |
-
1995
- 1995-01-06 JP JP00090495A patent/JP3495121B2/en not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107413746A (en) * | 2017-08-25 | 2017-12-01 | 北京南轩兴达电子科技有限公司 | Full-automatic LED Wafer Cleaning equipment |
Also Published As
Publication number | Publication date |
---|---|
JPH08187476A (en) | 1996-07-23 |
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