JP3493530B2 - Heat treatment equipment - Google Patents
Heat treatment equipmentInfo
- Publication number
- JP3493530B2 JP3493530B2 JP33022594A JP33022594A JP3493530B2 JP 3493530 B2 JP3493530 B2 JP 3493530B2 JP 33022594 A JP33022594 A JP 33022594A JP 33022594 A JP33022594 A JP 33022594A JP 3493530 B2 JP3493530 B2 JP 3493530B2
- Authority
- JP
- Japan
- Prior art keywords
- heat treatment
- temperature
- treatment apparatus
- reaction container
- lid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Description
【０００１】[0001]
【産業上の利用分野】この発明は、熱処理装置に関する
ものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a heat treatment apparatus.
【０００２】[0002]
【従来の技術】従来、半導体製造工程においては、被処
理体である半導体ウエハ（以下にウエハという）の表面
に薄膜や酸化膜を積層したり、あるいは不純物の拡散等
を行うために、ＣＶＤ装置、酸化膜形成装置、あるいは
拡散装置等の熱処理装置が用いられている。2. Description of the Related Art Conventionally, in a semiconductor manufacturing process, a CVD apparatus is used for laminating a thin film or an oxide film on the surface of a semiconductor wafer (hereinafter referred to as a wafer) which is an object to be processed, or for diffusing impurities. A heat treatment device such as an oxide film forming device or a diffusion device is used.
【０００３】この種の熱処理装置は、耐熱材料例えば石
英製の筒状反応容器を直立させて設け、この反応容器を
包囲して内部を１０００〜１２００℃以上の高温の温度
に加熱するヒータ部を具備してなる。また、反応容器の
下方は開口部となっており、この開口部を介してウエハ
を水平に支持する耐熱性のウエハボートが搬入・搬出可
能に構成されている。開口部には、内部を気密に保持す
るＯリング等を介して蓋体が設けられており、この蓋体
は、スプリングを介して上下駆動機構に連結された支持
体に支持されて、反応容器の開口部を開閉し得るように
構成されている。また、蓋体の外側には、冷却水の循環
路が設けられており、蓋体を冷却することにより反応容
器の下方に設けられた装置や機器類が加熱されるのを防
止している。In this type of heat treatment apparatus, a cylindrical reaction vessel made of a heat-resistant material, for example, quartz, is provided upright and surrounds the reaction vessel, and a heater portion for heating the inside to a high temperature of 1000 to 1200 ° C. or higher is provided. Be prepared. An opening is formed below the reaction container, and a heat-resistant wafer boat that horizontally supports the wafer can be loaded and unloaded through the opening. The opening is provided with a lid via an O-ring or the like that keeps the inside airtight, and the lid is supported by a support connected to a vertical drive mechanism via a spring to provide a reaction container. Is configured so that the opening of the can be opened and closed. In addition, a cooling water circulation path is provided outside the lid, and by cooling the lid, the devices and equipment provided below the reaction vessel are prevented from being heated.
【０００４】[0004]
【発明が解決しようとする課題】ところで、最近では、
内部温度を約７００℃に加熱してウエハに所定の処理を
施す低温プロセスが行われている。この低温プロセスに
おいて、従来と同様に蓋体を水冷により冷却すると、温
度が下がり過ぎて水蒸気が発生し、結露水が開口部近傍
の排気口付近に溜まるという問題がある。また、反応ガ
ス例えばＨＣｌ等が水に溶けた反応生成物が反応容器の
開口部付近及び蓋体等に付着し、排気管等を腐食させる
虞れがあると共に、付着物が剥離してウエハの汚染を招
くという問題があった。By the way, recently,
A low temperature process in which an internal temperature is heated to about 700 ° C. and a predetermined process is performed on a wafer is performed. In this low-temperature process, if the lid is cooled by water cooling as in the conventional case, there is a problem that the temperature drops too much and steam is generated, and the condensed water accumulates near the exhaust port near the opening. In addition, a reaction product such as a reaction gas such as HCl dissolved in water may adhere to the vicinity of the opening of the reaction container and the lid to corrode the exhaust pipe. There was a problem of causing pollution.
【０００５】この問題を解決する手段として、蓋体上に
載置される保温筒にヒータを内蔵することにより、開口
部付近の温度を上げて水蒸気の発生を防止するもの、あ
るいは、蓋体にヒータを埋設して、同様に開口部付近の
温度を上げて水蒸気の発生を防止するものなどが考えら
れる。As a means for solving this problem, a heater is built in a heat retaining cylinder placed on the lid to raise the temperature in the vicinity of the opening to prevent the generation of water vapor, or the lid is provided with a heater. It is conceivable to embed a heater and similarly raise the temperature near the opening to prevent the generation of water vapor.
【０００６】しかしながら、前者すなわち保温筒内にヒ
ータを内蔵する構造のものにおいては、ウエハボートと
共に保温筒を洗浄する際の防水のために防水処理を施す
必要あり、そのため、構造が複雑となる共に、メンテナ
ンス性が悪いという問題がある。これに対して、後者す
なわち蓋体内にヒータを埋設するものは、メンテナンス
性の問題はないが、蓋体内にヒータを埋設することによ
り、ヒータの加熱温度（１００℃以上）が蓋体に伝熱さ
れるため、蓋体が変形する虞れがあり、反応容器の開口
部の気密性が低下し、ひいては処理能率の低下を招くと
いう問題がある。However, in the former case, that is, in the structure having the heater built into the heat retaining cylinder, it is necessary to perform a waterproof treatment for cleaning the heat retaining cylinder together with the wafer boat, which makes the structure complicated. However, there is a problem of poor maintainability. On the other hand, the latter, that is, the one in which the heater is embedded in the lid body does not have a problem of maintainability, but by embedding the heater in the lid body, the heating temperature of the heater (100 ° C. or higher) is transferred to the lid body. Therefore, there is a risk that the lid may be deformed, the airtightness of the opening of the reaction container is lowered, and the processing efficiency is lowered.
【０００７】この発明は上記事情に鑑みなされたもの
で、構造を簡単にし、水蒸気の発生防止及び反応生成物
が反応容器の開口部及び蓋体に付着するのを防止するよ
うにした熱処理装置を提供することを目的とするもので
ある。The present invention has been made in view of the above circumstances, and provides a heat treatment apparatus having a simple structure for preventing generation of water vapor and preventing a reaction product from adhering to an opening and a lid of a reaction vessel. It is intended to be provided.
【０００８】[0008]
【課題を解決するための手段】上記目的を達成するため
に、この発明の熱処理装置は、被処理体を支持する支持
手段を下方から挿入する開口部を有すると共に、導入さ
れる反応ガスにより被処理体に所定の処理を施す筒状の
反応容器と、この反応容器の上記開口部を開閉する蓋体
と、上記反応容器を包囲して設けられる加熱部とを具備
する熱処理装置を前提とし、上記蓋体の上記反応容器内
側面に凹部を設け、この凹部内に間隙を介して加熱手段
を設けたことを特徴とするものである（請求項１）。In order to achieve the above object, the heat treatment apparatus of the present invention has an opening through which a supporting means for supporting an object to be processed is inserted from below, and is covered by a reaction gas introduced. Assuming a heat treatment apparatus including a tubular reaction container for performing a predetermined treatment on a processing object, a lid for opening and closing the opening of the reaction container, and a heating unit provided to surround the reaction container, Inside the reaction vessel of the lid
A recess is provided on the side surface, and a heating means is provided in the recess with a gap (claim 1).
【０００９】[0009]
【００１０】 この発明において、上記加熱手段は任意
の構造のものでよいが、好ましくは加熱手段を面状ヒー
タにて形成し、この面状ヒータの反応容器内側面に熱伝
導性を有する表面板を積層すると共に、反対側面に均熱
板を積層してなる方がよい（請求項２）。[0010] heat transfer in the present invention, the heating means may be of any structure, but preferably the heating means is formed by planar heater, the reaction vessel inside surface of the planar heater
It is preferable that a surface plate having conductivity is laminated and a soaking plate is laminated on the opposite side surface ( claim 2 ).
【００１１】 また、加熱手段を面状ヒータにて形成
し、この面状ヒータの反応容器内側面に熱伝導性を有す
る表面板を積層すると共に、反対側面に均熱板を積層
し、上記面状ヒータ及び均熱板に設けられた透孔を遊嵌
する支持部材を介して上記蓋体と表面板とを固定する方
が好ましい（請求項３）。Further, the heating means is formed by a planar heater, and the planar heater has thermal conductivity on the inner surface of the reaction container.
The surface plate is laminated on the opposite side surface, and the cover body and the surface plate are fixed to each other via a supporting member that loosely fits the through hole provided in the planar heater and the uniform plate. It is preferable to do ( Claim 3 ).
【００１２】 加えて、加熱手段の温度を検出する温度
検出手段と、開口部の雰囲気温度を検出する温度検出手
段を配設し、これら温度検出手段からの検出信号に基い
て上記加熱手段の温度を制御する方が好ましい（請求項
４）。In addition, the temperature for detecting the temperature of the heating means
Detection means and a temperature detection hand that detects the ambient temperature of the opening
Arranged a step, it is preferable to control the temperature of the heating means based on the detection signals from the temperature detecting means (claim
4 ).
【００１３】[0013]
【作用】上記のように構成されるこの発明の熱処理装置
によれば、蓋体の反応容器内側面に間隙を介して加熱手
段を設けることにより、加熱手段からの熱を蓋体の反応
容器内側面に伝熱して、被処理体の処理後の反応容器内
の温度低下に伴う水蒸気の発生を防止することができる
と共に、反応生成物の反応容器内及び蓋体への付着を防
止することができる。また、間隙により加熱手段からの
蓋体自体への伝熱を阻止することができるので、蓋体の
熱変形を防止することができる。According to the heat treatment apparatus of the present invention configured as described above, the heating means is provided on the inner surface of the reaction vessel of the lid through the gap, so that the heat from the heating means is transferred to the inside of the reaction vessel of the lid. Heat can be transferred to the side surface to prevent the generation of water vapor due to the temperature decrease in the reaction container after the treatment of the object to be processed, and also to prevent the reaction product from adhering to the reaction container and the lid. it can. Further, since the heat transfer from the heating means to the lid itself can be blocked by the gap, it is possible to prevent thermal deformation of the lid.
【００１４】 また、加熱手段の温度を検出する温度検
出手段と、開口部の雰囲気温度を検出する温度検出手段
を配設し、これら温度検出手段からの検出信号に基いて
加熱手段の温度を制御することにより、開口部雰囲気の
温度及び加熱手段の加熱温度を適正状態に制御すること
ができる。Further, a temperature detector for detecting the temperature of the heating means is used.
Outputting means and temperature detecting means for detecting the ambient temperature of the opening
Is provided and the temperature of the heating means is controlled based on the detection signals from these temperature detecting means, whereby the temperature of the opening atmosphere and the heating temperature of the heating means can be controlled to an appropriate state.
【００１５】[0015]
【実施例】以下にこの発明の実施例を図面に基いて詳細
に説明する。ここでは、この発明の熱処理装置を半導体
ウエハの縦型熱熱処理装置に適用した場合について説明
する。Embodiments of the present invention will be described in detail below with reference to the drawings. Here, a case where the heat treatment apparatus of the present invention is applied to a vertical heat treatment apparatus for semiconductor wafers will be described.
【００１６】図１はこの発明の熱処理装置の概略断面
図、図２はその要部断面図である。FIG. 1 is a schematic sectional view of a heat treatment apparatus according to the present invention, and FIG. 2 is a sectional view of a main part thereof.
【００１７】上記縦型熱処理装置は、例えば石英等の耐
熱材料にて形成される有底筒状の反応容器１を開口部２
を下方側にして直立して設け、この反応容器１の外周に
は、加熱部であるヒータ３が反応容器１を包囲して設け
られている。ヒータ３の外周は、断熱材にて形成される
外容器４で包囲し、ヒータ３の熱が効率よく反応容器１
内を約７００℃に加熱し得るように構成されている。In the vertical heat treatment apparatus, a bottomed cylindrical reaction vessel 1 made of a heat-resistant material such as quartz is provided with an opening 2.
Is provided so as to be upside down, and a heater 3 as a heating unit is provided on the outer periphery of the reaction container 1 so as to surround the reaction container 1. The outer circumference of the heater 3 is surrounded by an outer container 4 formed of a heat insulating material so that the heat of the heater 3 can be efficiently supplied to the reaction container 1.
It is configured so that the inside can be heated to about 700 ° C.
【００１８】反応容器１の開口部２には、ステンレス鋼
製の蓋体６が開閉可能に設けられ、開口部２を開閉して
反応容器１内に処理体であるウエハＷを水平に複数枚支
持する石英製の支持手段であるウエハボート７の搬入・
搬出可能としている。ウエハボート７は、蓋体６上に設
けられる保温筒８上に載置されウエハボート７全体を反
応容器１の均熱部分に保持し得るように構成されてい
る。また、保温筒８は保温筒カバー８ａによって覆われ
ており、この保温筒カバー８ａのフランジ部８ｂが反応
容器１の開口部２を閉塞すると共に、開口部２の反応容
器１の下面側に設けられた周溝１ａを閉塞し、周溝１ａ
内の雰囲気を図示しない吸引手段によって反応容器１内
を気密にシールし得るように構成されている。A lid 6 made of stainless steel is openably and closably provided in the opening 2 of the reaction container 1, and the opening 2 is opened and closed to horizontally dispose a plurality of wafers W as processing objects in the reaction container 1. Carrying in the wafer boat 7 which is a supporting means made of quartz for supporting
It is possible to carry it out. The wafer boat 7 is mounted on a heat-retaining cylinder 8 provided on the lid body 6 so that the entire wafer boat 7 can be held at the soaking portion of the reaction vessel 1. The heat insulation cylinder 8 is covered with a heat insulation cylinder cover 8a. The flange portion 8b of the heat insulation cylinder cover 8a closes the opening 2 of the reaction container 1 and is provided on the lower surface side of the reaction container 1 of the opening 2. The peripheral groove 1a is closed to close the peripheral groove 1a.
The inside of the reaction container 1 can be hermetically sealed by a suction means (not shown).
【００１９】反応容器１の開口部２近傍には、反応ガス
供給手段（図示せず）に接続された反応ガス導入管９が
反応容器１の内壁面に沿って設けられ、反応ガス導入管
９の管壁の軸方向に複数設けられる供給孔９ａから反応
ガスが反応容器１内に供給されるようになっている。ま
た、反応容器１の下部に排気装置（図示せず）に接続さ
れた排気口１０が設けられ、ウエハＷを処理して生成さ
れる反応生成物や余剰反応ガスを排気し、内部を所望の
圧力に維持し得るようになっている。排気口１０は、複
数例えば３箇所設けられており、反応容器１内の反応ガ
ス流を均一に形成し得るようになっている。A reaction gas introduction pipe 9 connected to a reaction gas supply means (not shown) is provided along the inner wall surface of the reaction container 1 near the opening 2 of the reaction container 1, and the reaction gas introduction pipe 9 is provided. The reaction gas is supplied into the reaction vessel 1 through a plurality of supply holes 9a provided in the axial direction of the tube wall. In addition, an exhaust port 10 connected to an exhaust device (not shown) is provided in the lower portion of the reaction container 1 to exhaust reaction products generated by processing the wafer W and surplus reaction gas, and to set a desired inside of the reaction container 1. It can be maintained at pressure. A plurality of, for example, three exhaust ports 10 are provided so that the reaction gas flow in the reaction container 1 can be formed uniformly.
【００２０】上記蓋体６は、スプリング１１を介して例
えばボールねじにて形成される上下駆動機構１２に連結
される支持体１３により支持され、上下駆動機構１２に
より上下動されて、反応容器１の開口部２を開閉すると
共に、ウエハＷを支持したウエハボート７を上下動して
反応容器１内に搬入・搬出するようになっている。The lid 6 is supported by a support 13 connected to a vertical drive mechanism 12 formed of, for example, a ball screw via a spring 11, and is vertically moved by the vertical drive mechanism 12 to move the reaction vessel 1 The opening 2 is opened and closed, and the wafer boat 7 supporting the wafer W is moved up and down to be carried in and out of the reaction container 1.
【００２１】また、蓋体６は、反応容器内側面の中央部
に凹部６ａを有する蓋体本体６ｂにて形成され、この蓋
体本体６ｂの凹部６ａ内に間隙１４を介して加熱手段１
５を設けてなる。この場合、加熱手段１５は、図４に示
すように、ドーナツ状のマイカ板１５ａにヒータ線１５
ｂを巻き付けたヒータ線巻付部１５ｃと、このヒータ線
巻付部１５ｃの両面にそれぞれドーナツ状のマイカ板１
５ｄ，１５ｅを積層した面状ヒータにて形成されてい
る。なお、図４において、符号１５ｆはリード線であ
る。このように形成される加熱手段すなわち面状ヒータ
１５の加熱温度は、反応生成物の気化温度、例えば１０
０℃以上に設定されている。The lid 6 is formed of a lid body 6b having a recess 6a in the center of the inner surface of the reaction vessel, and the heating means 1 is provided in the recess 6a of the lid body 6b with a gap 14 therebetween.
5 is provided. In this case, the heating means 15 includes a doughnut-shaped mica plate 15a and a heater wire 15 as shown in FIG.
The heater wire winding portion 15c around which b is wound, and the doughnut-shaped mica plate 1 on both surfaces of the heater wire winding portion 15c, respectively.
It is formed by a planar heater in which 5d and 15e are laminated. In FIG. 4, reference numeral 15f is a lead wire. The heating temperature of the heating means thus formed, that is, the planar heater 15, is the vaporization temperature of the reaction product, for example, 10
It is set above 0 ℃.
【００２２】上記のように形成される加熱手段すなわち
面状ヒータ１５の反応容器１内側面に、熱伝導性を有す
るアルミニウム合金製の表面板１６が積層されると共
に、反対側面には、面状ヒータ１５の熱を均一にするた
めのアルミニウム合金製の均熱板１７が積層されてい
る。また、均熱板１７の下面にはヒータ取付板１８が積
層されて、これら表面板１６，面状ヒータ１５，均熱板
１７及びヒータ取付板１８は連結ねじ１９にて固定され
て一体となっている（図３参照）。したがって、面状ヒ
ータ１５からの熱が均熱板１７によって均一に拡散され
て表面板１６に伝熱されて反応容器１の開口部２付近、
具体的には蓋体６上に載置される保温筒カバー８ａの反
応容器１内に面する表面部及び周辺部を所定の温度、例
えば１００℃以上に加熱することができる。また、面状
ヒータ１５，均熱板１７及びヒータ取付板１８の同一円
周上には３個の透孔２０が穿設されており、この透孔２
０内を遊嵌する支持部材である円柱状のステンレス鋼製
のスペーサ２１を介して固定ねじ２２をもって蓋体本体
６ｂと表面板１６とが固定されている（図５及び図６参
照）。このようにスペーサ２１を介して蓋体本体６ｂと
表面板１６とを固定することにより面状ヒータ１５から
の熱が直接蓋体本体６ｂに伝達されることがないので、
面状ヒータ１５の熱の放熱を防止することができると共
に、面状ヒータ１５の加熱によって蓋体自体が変形する
のを防止することができる。A surface plate 16 made of an aluminum alloy having thermal conductivity is laminated on the inner surface of the reaction vessel 1 of the heating means, ie, the planar heater 15, formed as described above, and the opposite surface has a planar surface. A soaking plate 17 made of an aluminum alloy for making the heat of the heater 15 uniform is laminated. Further, a heater mounting plate 18 is laminated on the lower surface of the heat equalizing plate 17, and the surface plate 16, the planar heater 15, the heat equalizing plate 17, and the heater mounting plate 18 are fixed by a connecting screw 19 to be integrated. (See FIG. 3). Therefore, the heat from the planar heater 15 is uniformly diffused by the heat equalizing plate 17 and transferred to the surface plate 16, and the vicinity of the opening 2 of the reaction container 1
Specifically, the surface portion and the peripheral portion of the heat insulating cylinder cover 8a placed on the lid 6 facing the inside of the reaction container 1 can be heated to a predetermined temperature, for example, 100 ° C. or higher. Further, three through holes 20 are formed on the same circumference of the sheet heater 15, the heat equalizing plate 17, and the heater mounting plate 18.
The lid body 6b and the surface plate 16 are fixed to each other with a fixing screw 22 via a cylindrical stainless steel spacer 21 that is a support member that loosely fits in the interior of the 0 (see FIGS. 5 and 6). By fixing the lid body 6b and the surface plate 16 via the spacer 21 in this way, heat from the planar heater 15 is not directly transferred to the lid body 6b.
It is possible to prevent the heat of the planar heater 15 from being dissipated, and it is possible to prevent the lid itself from being deformed by the heating of the planar heater 15.
【００２３】一方、図５、図７及び図８に示すように、
上記表面板１６には制御用の温度検出センサ２３とモニ
ター用の温度検出センサ２４が埋設されており、また、
反応容器１の開口部２近傍には、蓋体６を貫通して開口
部近傍に臨む制御用及びモニター用の雰囲気温度検出セ
ンサ２５，２６が配設されている。なお、モニター用の
温度検出センサ２４とモニター用の雰囲気温度検出セン
サ２６は必要に応じて取り付けることができるようにな
っている。これら温度センサ２３〜２６によって検出さ
れた検出信号は例えば中央演算処理装置（ＣＰＵ）にて
形成される制御部２７に伝達され、制御部２７にて予め
記憶された情報と比較演算されて、その出力信号が面状
ヒータ１５の駆動電源部（図示せず）に伝達されるよう
になっている。したがって、制御用温度センサ２３によ
り面状ヒータ１５の加熱温度を検出し、制御用の雰囲気
温度検出センサ２５により反応容器１の開口部の雰囲気
温度を検出（監視）することができるので、面状ヒータ
１５の加熱温度を適正温度に制御して、処理後の水蒸気
の発生を防止することができる。On the other hand, as shown in FIG. 5, FIG. 7 and FIG.
A temperature detecting sensor 23 for control and a temperature detecting sensor 24 for monitoring are embedded in the surface plate 16, and
In the vicinity of the opening 2 of the reaction container 1, atmospheric temperature detection sensors 25 and 26 for penetrating the lid 6 and facing the vicinity of the opening are provided. The temperature detection sensor 24 for monitoring and the ambient temperature detection sensor 26 for monitoring can be attached as needed. Detection signals detected by these temperature sensors 23 to 26 are transmitted to a control unit 27 formed by, for example, a central processing unit (CPU), are compared with information stored in advance by the control unit 27, and are calculated. The output signal is transmitted to the drive power supply unit (not shown) of the planar heater 15. Therefore, the control temperature sensor 23 can detect the heating temperature of the planar heater 15, and the control ambient temperature detection sensor 25 can detect (monitor) the ambient temperature of the opening of the reaction vessel 1. By controlling the heating temperature of the heater 15 to an appropriate temperature, it is possible to prevent generation of water vapor after the treatment.
【００２４】上記のように構成される縦型熱処理装置を
用いてウエハＷの処理を行うには、まず、図示しない搬
送装置で未処理のウエハＷを載置したウエハボート７を
上下駆動機構１２で下降された蓋体６上の保温筒８上に
載置し、上下駆動機構１２を上昇させてウエハボート７
を反応容器１内に搬入させ、蓋体６上に載置される保温
筒カバー８ａで反応容器１の開口部２を閉塞させる。次
に、排気口１０から反応容器１内の空気を吸引すると共
に、ヒータ３により反応容器１を所望の温度約７００℃
に加熱する。その後、反応ガスを反応ガス導入管９から
反応容器１内に導入する。反応ガスは反応ガス導入管９
に穿設された供給孔９ａから支持体１３上のウエハＷに
供給される。例えば、縦型熱処理装置を拡散処理に使用
する場合には、反応ガスとしてＰｏＣｌ2，Ｏ2等が使用
され、ウエハＷにリン（ｐ）を拡散させることができ
る。このようにしてウエハＷに所定の処理を施した後、
図示しない排気装置により排気口１０から吸引し、余剰
の反応ガスと共に反応生成物を排気する。In order to process the wafer W using the vertical heat treatment apparatus having the above-described structure, first, the wafer boat 7 on which the unprocessed wafer W is placed by the transfer device (not shown) is moved up and down. The wafer boat 7 is placed on the heat-retaining cylinder 8 on the lid 6 lowered by the above, and the vertical drive mechanism 12 is raised.
Is carried into the reaction container 1, and the opening 2 of the reaction container 1 is closed by the heat insulating cylinder cover 8a placed on the lid 6. Next, the air in the reaction vessel 1 is sucked from the exhaust port 10 and the reaction vessel 1 is heated by the heater 3 to a desired temperature of about 700 ° C.
Heat to. Then, the reaction gas is introduced into the reaction container 1 through the reaction gas introduction pipe 9. The reaction gas is the reaction gas introduction pipe 9
The wafer W on the support 13 is supplied from the supply hole 9a formed in the wafer. For example, when the vertical heat treatment apparatus is used for the diffusion process, PoCl 2 , O 2 or the like is used as the reaction gas, and phosphorus (p) can be diffused in the wafer W. After performing the predetermined processing on the wafer W in this way,
The reaction product is exhausted together with the surplus reaction gas by suction from the exhaust port 10 by an exhaust device (not shown).
【００２５】この時、面状ヒータ１５の駆動電源部が作
動し、面状ヒータ１５が発熱して表面板１６を１００℃
以上に加熱することにより、水蒸気の発生が防止される
と共に、反応生成物が開口部近傍及び蓋体６に付着する
のを防止することができる。ウエハＷの処理後、一定の
冷却時間経過後に上下駆動機構１２により、蓋体６を下
降させると共に、ウエハボート７を下降させ、処理済み
のウエハＷを搬出させる。At this time, the driving power source of the sheet heater 15 is activated, the sheet heater 15 generates heat and the surface plate 16 is heated to 100.degree.
By heating above, it is possible to prevent generation of water vapor and prevent the reaction product from adhering to the vicinity of the opening and the lid 6. After the processing of the wafer W, after the elapse of a certain cooling time, the lid 6 is lowered by the vertical drive mechanism 12 and the wafer boat 7 is lowered, and the processed wafer W is unloaded.
【００２６】なお、上記実施例では、ウエハボート７が
回転しない固定式のものについて説明したが、ウエハボ
ート７を回転させる回転機構を有する縦型熱処理装置に
おいても適用できる。この場合には、反応容器１の外側
に配設されるモータの軸を蓋体６に設けられる貫通孔を
介して上部に突出させて保温筒８を支持させるようにす
ればよい。In the above embodiment, the fixed type in which the wafer boat 7 does not rotate has been described, but the present invention can also be applied to a vertical heat treatment apparatus having a rotating mechanism for rotating the wafer boat 7. In this case, the shaft of the motor arranged outside the reaction container 1 may be projected upward through a through hole provided in the lid 6 to support the heat insulating cylinder 8.
【００２７】また、上記実施例では、この発明の熱処理
装置を半導体ウエハの縦型熱処理装置に適用した場合に
ついて説明したが、半導体ウエハ以外の例えばガラス基
板、ＬＣＤ基板等の被処理体の熱処理装置にも適用でき
ることは勿論である。Further, in the above embodiment, the case where the heat treatment apparatus of the present invention is applied to the vertical heat treatment apparatus for semiconductor wafers has been described, but the heat treatment apparatus for the object other than the semiconductor wafer, such as a glass substrate, an LCD substrate, etc. Of course, it can also be applied to.
【００２８】[0028]
【発明の効果】以上に説明したように、この発明の熱処
理装置によれば、上記のように構成されているので、以
下のような効果が得られる。As described above, according to the heat treatment apparatus of the present invention, which is configured as described above, the following effects can be obtained.
【００２９】反応容器の開口部を開閉する蓋体の反応容
器内側面に間隙を介して加熱手段を設けるので、加熱手
段からの熱を蓋体の反応容器内側面に伝熱して、被処理
体の処理後の反応容器内の温度低下に伴う水蒸気の発生
を防止することができると共に、反応生成物の反応容器
内及び蓋体への付着を防止することができる。したがっ
て、装置の寿命の増大が図れると共に、被処理体の汚染
を防止し、歩留まりの向上を図ることができる。Since the heating means is provided on the inner surface of the reaction container of the lid for opening and closing the opening of the reaction container through a gap, the heat from the heating means is transferred to the inner surface of the reaction container of the lid, and the object to be treated is transferred. It is possible to prevent the generation of water vapor due to the temperature decrease in the reaction container after the treatment (1), and to prevent the reaction product from adhering to the reaction container and the lid. Therefore, the life of the device can be increased, the contamination of the object to be processed can be prevented, and the yield can be improved.
【００３０】また、間隙により加熱手段からの蓋体自体
への伝熱を阻止することができるので、蓋体の熱変形を
防止することができ、反応容器の開口部の気密性を維持
して処理能率の向上を図ることができる。Further, heat transfer from the heating means to the lid itself can be prevented by the gap, so that thermal deformation of the lid can be prevented and the airtightness of the opening of the reaction container can be maintained. The processing efficiency can be improved.
【００３１】 また、加熱手段の温度を検出する温度検
出手段と、開口部の雰囲気温度を検出する温度検出手段
を配設し、これら温度検出手段からの検出信号に基いて
加熱手段の温度を制御することにより、開口部雰囲気の
温度及び加熱手段の加熱温度を適正状態に制御すること
ができる。Further, a temperature detection for detecting the temperature of the heating means is performed.
Outputting means and temperature detecting means for detecting the ambient temperature of the opening
Is provided and the temperature of the heating means is controlled based on the detection signals from these temperature detecting means, whereby the temperature of the opening atmosphere and the heating temperature of the heating means can be controlled to an appropriate state.
【図１】この発明の熱処理装置の一例を示す概略断面図
である。FIG. 1 is a schematic sectional view showing an example of a heat treatment apparatus of the present invention.
【図２】図１の要部断面図である。FIG. 2 is a cross-sectional view of a main part of FIG.
【図３】図２の III部拡大図である。FIG. 3 is an enlarged view of a part III in FIG.
【図４】この発明における加熱手段の分解斜視図であ
る。FIG. 4 is an exploded perspective view of the heating means according to the present invention.
【図５】この発明における蓋体の底面図である。FIG. 5 is a bottom view of the lid according to the present invention.
【図６】図５のＡ−Ａ断面図である。6 is a cross-sectional view taken along the line AA of FIG.
【図７】図５のＢ−Ｂ断面図である。7 is a sectional view taken along line BB of FIG.
【図８】図５のＣ−Ｃ断面図である。8 is a cross-sectional view taken along the line CC of FIG.
Ｗ 半導体ウエハ（被処理体） １ 反応容器 ２ 開口部 ３ ヒータ（加熱部） ６ 蓋体 ６ａ 凹部 ６ｂ 蓋体本体 ７ ウエハボート（支持手段） １４ 間隙 １５ 面状ヒータ（加熱手段） １６ 表面板 １７ 均熱板 ２０ 透孔 ２１ スペーサ（支持部材） ２３ 制御用温度センサ ２４ モニター用温度センサ ２５ 制御用雰囲気温度検出センサ ２６ モニター用雰囲気温度検出センサ ２７ 制御部 W Semiconductor wafer (Processing object) 1 reaction vessel 2 openings 3 heater (heating unit) 6 lid 6a recess 6b Lid body 7 Wafer boat (supporting means) 14 Gap 15 Sheet heater (heating means) 16 Surface plate 17 Uniform plate 20 through holes 21 Spacer (support member) 23 Control temperature sensor 24 Temperature sensor for monitor 25 Ambient temperature detection sensor for control 26 Ambient temperature detection sensor for monitor 27 Control unit
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 21/22 H01L 21/324 ─────────────────────────────────────────────────── ─── Continuation of front page (58) Fields surveyed (Int.Cl. 7 , DB name) H01L 21/22 H01L 21/324
Claims (4)
挿入する開口部を有すると共に、導入される反応ガスに
より被処理体に所定の処理を施す筒状の反応容器と、こ
の反応容器の上記開口部を開閉する蓋体と、上記反応容
器を包囲して設けられる加熱部とを具備する熱処理装置
において、 上記蓋体の上記反応容器内側面に凹部を設け、この凹部
内に間隙を介して加熱手段を設けたことを特徴とする熱
処理装置。1. A cylindrical reaction container having an opening into which a supporting means for supporting an object to be processed is inserted from below and performing a predetermined process on the object to be processed by an introduced reaction gas; In a heat treatment apparatus comprising a lid that opens and closes the opening, and a heating unit that is provided so as to surround the reaction container, a recess is provided on the inner surface of the reaction container of the lid, and a gap is provided in the recess. A heat treatment apparatus characterized in that a heating means is provided.
面板を積層すると共に、反対側面に均熱板を積層してな
ることを特徴とする熱処理装置。2. The heat treatment apparatus according to claim 1, wherein the heating means is formed by a planar heater , a surface plate having thermal conductivity is laminated on the inner surface of the reaction container of the planar heater, and the opposite surface is formed on the opposite surface. A heat treatment apparatus comprising a stack of heat equalizing plates.
面板を積層すると共に、反対側面に均熱板を積層してな
り、 上記面状ヒータ及び均熱板に設けられた透孔を遊嵌する
支持部材を介して上記蓋体と表面板とを固定することを
特徴とする熱処理装置。3. The heat treatment apparatus according to claim 1, wherein the heating means is formed by a planar heater , a surface plate having thermal conductivity is laminated on the inner surface of the reaction container of the planar heater, and the opposite surface is formed on the opposite surface. A heat treatment apparatus comprising a stack of heat equalizing plates, wherein the cover and the surface plate are fixed to each other via a support member that loosely fits through holes provided in the planar heater and the heat equalizing plate.
囲気温度を検出する温度検出手段を配設し、これら 温度
検出手段からの検出信号に基いて上記加熱手段の温度を
制御することを特徴とする熱処理装置。4. The heat treatment apparatus according to claim 1 , wherein the temperature detecting means for detecting the temperature of the heating means and the atmosphere of the opening are provided.
A heat treatment apparatus comprising temperature detecting means for detecting an ambient temperature, and controlling the temperature of the heating means on the basis of a detection signal from the temperature detecting means.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33022594A JP3493530B2 (en) | 1994-12-06 | 1994-12-06 | Heat treatment equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33022594A JP3493530B2 (en) | 1994-12-06 | 1994-12-06 | Heat treatment equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH08162422A JPH08162422A (en) | 1996-06-21 |
| JP3493530B2 true JP3493530B2 (en) | 2004-02-03 |
Family
ID=18230260
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP33022594A Expired - Fee Related JP3493530B2 (en) | 1994-12-06 | 1994-12-06 | Heat treatment equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3493530B2 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002289603A (en) * | 2001-03-28 | 2002-10-04 | Tokyo Electron Ltd | Heat treatment device and heat treatment method |
| JP5252850B2 (en) * | 2007-07-30 | 2013-07-31 | 株式会社日立国際電気 | Substrate processing apparatus and semiconductor device manufacturing method |
| KR101715530B1 (en) * | 2012-07-27 | 2017-03-10 | 가부시키가이샤 히다치 고쿠사이 덴키 | Substrate processing apparatus, method for manufacturing semiconductor device, and recording medium |
| KR101750633B1 (en) * | 2012-07-30 | 2017-06-23 | 가부시키가이샤 히다치 고쿠사이 덴키 | Substrate processing apparatus, method for manufacturing semiconductor device, and recording medium |
| KR102359596B1 (en) * | 2021-04-21 | 2022-02-08 | 주식회사 알씨테크 | A seal cap and a semiconductor manufacturing equipment comprising thereof |
-
1994
- 1994-12-06 JP JP33022594A patent/JP3493530B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH08162422A (en) | 1996-06-21 |
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