JP3485335B2 - Electrostatic chuck for plasma processing equipment - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electrostatic chuck for bringing a substrate into close contact with a substrate holder in a plasma processing apparatus for processing a substrate on a substrate holder by generating plasma in a vacuum chamber.

[0002]

2. Description of the Related Art At present, a plasma processing apparatus for plasma processing a substrate to be processed (hereinafter also simply referred to as a substrate) by utilizing high frequency glow discharge is actively used in the manufacture of semiconductor integrated circuits. Among them, reactive ion etching (R) in which a substrate is placed on a high-frequency applying electrode and physically and chemically etched by using ions and excited active species in plasma
Since the IE) device is capable of anisotropic etching and is excellent in mass productivity, it has been widely used in each process step of semiconductor device manufacturing.

However, in the beginning, this type of apparatus had a structure in which the substrate to be processed was simply placed on the high frequency applying electrode (or on the substrate mounting table placed thereon). In addition, the substrate is easily heated by the plasma, the substrate temperature rises, the photoresist of the etching mask is thermally damaged, the etching shape deteriorates, and the etching rate can be improved and the etching shape can be controlled as desired. It had the drawback of being difficult to control.

For this reason, various measures have been taken to cool the substrate to a desired temperature during etching. The first method is to mechanically clamp the substrate to the electrode (or the substrate mounting table placed thereon) to improve the thermal contact between the two. In the second method, a gas such as He is caused to flow on the back surface of the substrate to increase the heat transfer effect between the substrate and the substrate mounting surface for cooling. The third method is called an electrostatic chuck method, in which a direct current electrode is embedded below the substrate mounting portion and the substrate is brought into close contact with the substrate mounting table by an electrostatic force to improve heat transfer. In particular, various methods have been devised because the electrostatic chuck method has a relatively simple structure and a large cooling effect.

For example, in the electrostatic chuck method utilizing the electric conductivity of gas plasma disclosed in Japanese Patent Publication No. 56-53853, "Dry etching apparatus", an electrode in which a high frequency applying electrode and a gas plasma sandwich a dielectric film is used. Working as. This method is simple and has a small amount of damage applied to the substrate, and since the electrostatic chucking force works only while the gas plasma is present, the substrate can be easily attached and detached, and this method is very effective.

Further, as disclosed in Japanese Unexamined Patent Publication No. 1-312087, "Dry etching apparatus", the DC voltage superimposed on the high frequency applying electrode is a negative voltage having a larger absolute value than the self-bias voltage induced on the substrate. By doing so, a large electron current does not flow to the high frequency applying electrode. As a result, the dielectric breakdown of the dielectric film was almost eliminated, and the electrostatic chuck became mechanically highly reliable.

In order to increase the reliability of adsorption of the electrostatic chuck and increase the adsorption effect, it is necessary to increase the relative permittivity of the dielectric film or mix titanium oxide with the alumina film used as the dielectric film. It is effective, and by using these dielectric films, a strong adsorption force can be obtained and the substrate can be efficiently cooled during the plasma processing.

[0008]

By the way, in the above-mentioned electrostatic chuck utilizing the self-bias voltage induced in the substrate, it takes some time from the generation of plasma to the action of the electrostatic attraction force. In other words, in order for the electrostatic chuck to fully function, it is necessary for the electric charges to sufficiently accumulate in the vicinity of the surface of the dielectric film between the high frequency applying electrode and the substrate. It takes several tens of seconds until the chucking force of the electric chuck reaches a predetermined value and the substrate can be cooled sufficiently. In such a situation, in the case of a high-speed single-wafer dry etching apparatus that processes a substrate with high power, the temperature of the substrate is required by plasma before the attraction force is generated and the cooling action of the substrate works. There was a problem of rising above the above.

As another method of the electrostatic chuck, two electrostatic chuck electrodes insulated from each other are embedded in a substrate holder, and these electrodes are covered with a dielectric layer, and the substrate is placed on the dielectric layer. There is a way to hold. This method is 2
The substrate is attracted by applying a DC voltage between the electrostatic chuck electrodes to generate a potential difference therebetween. According to this method, the substrate can be adsorbed to the substrate holder even if plasma is not generated. However, when the substrate is self-biased during the plasma processing, the potentials between the two electrostatic chuck electrodes and the substrate are different, so that the entire surface of the substrate cannot be uniformly adsorbed (that is, uniformly cooled). However, there is a problem that a temperature distribution occurs in the substrate.

An object of the present invention is to allow a substrate to be adsorbed to a substrate holder even when plasma is not generated in a plasma processing apparatus, and to maintain a uniform adsorption force over the entire surface of the substrate when plasma is generated. It is to provide an electrostatic chuck capable of

[0011]

A first invention is an electrostatic chuck in a plasma processing apparatus for processing a substrate on a substrate holder by using plasma generated in a vacuum chamber, wherein the substrate holders are electrically connected to each other. A plurality of embedded electrodes insulated from each other, and a dielectric layer that covers these embedded electrodes and whose surface serves as a substrate mounting surface, and the plurality of embedded electrodes have the same potential state where they are at the same potential. , At least one embedded electrode can be electrically switched between different embedded electrodes and different potential states in which the embedded electrodes have different potentials . Then, insert it into the vacuum container.
When the plasma is generated, the plurality of embedded electrodes
When the same potential is applied and no plasma is generated
The plurality of embedded electrodes are brought to the different potential state.
Furthermore, a high frequency applying electrode is installed on the substrate holder.
In the same potential state, the plurality of embedded electrodes are
All are connected to the high frequency applying electrode and the substrate
Negative bias voltage with a larger absolute value than the negative bias voltage
Current voltage is superimposed on the high frequency applying electrode,
At least one of the plurality of embedded electrodes is grounded.
In addition to being connected to the high frequency applying electrode in the state of
It is characterized in that a negative DC voltage is applied to the buried electrode of .

The electrostatic chuck of the present invention can be applied to any substrate processing apparatus using plasma, and can be applied to a dry etching apparatus or a film forming apparatus using plasma.
The substrate holder may also serve as an electrode for generating plasma, or may simply have a substrate holding function. Since the dielectric layer exists between the substrate and the embedded electrode, it is necessary to install a high frequency applying electrode on the substrate holder in order to use the substrate holder as an electrode for plasma generation. The number of embedded electrodes may be any number as long as it is two or more. The dielectric layer covering the buried electrode must be at least between the substrate and the buried electrode,
The surface of the embedded electrode opposite to the substrate is not necessarily covered with the dielectric layer.

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[0015] inventions of this be one substrate holder also serves the electrode for generating plasma, for which, the substrate holder that has been installed powered electrode. An example of the invention of this, the high frequency application electrode connected to a DC voltage source negative 500V, DC together other embedded electrode for grounding the high frequency application electrode negative 1000V at different potential state when the potential state It can be connected to a voltage source.

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According to a second aspect of the invention, the substrate holder is movable with respect to the vacuum container in a direction perpendicular to the substrate mounting surface,
With the movement of the substrate holder, the same potential state and the different potential state are switched.

A third invention is that the substrate holder is provided with a high frequency wave.
The application electrode is installed, and in the same potential state, the plurality of
All of the embedded electrodes are connected to the high frequency applying electrode
Up to the point, it is the same as the first invention,
In addition, the plurality of embedded electrodes are at least one first embedded electrode that is always connected to the high frequency applying electrode in a direct current manner, and at least one second embedded electrode that is selectively connectable to the high frequency applying electrode. Of embedded electrodes.

In a fourth aspect based on the third aspect , the back surface of the high-frequency applying electrode is covered with an insulator block having a cavity, and a moving body is arranged inside the cavity, and the high frequency of the moving body is high. The applying electrode side is formed of a conductor and the other portion is formed of an insulator, and the second embedded electrode is selectively connected to the high frequency applying electrode via the conductor of the moving body by the movement of the moving body. It is something.

In a fifth aspect based on the fourth aspect , a voltage introducing terminal is installed in the vacuum container, and the voltage introducing terminal is
By moving in a direction perpendicular to the substrate mounting surface relative to the substrate holder, the voltage introducing terminal comes into contact with and moves the insulator of the moving body, and thus the second embedded electrode. Disconnects the electrical connection with the high frequency applying electrode, and the voltage introducing terminal comes into contact with the second embedded electrode. As a structure for moving the voltage introducing terminal relative to the substrate holder in the direction perpendicular to the substrate mounting surface, the voltage introducing terminal is fixed to the vacuum container and the substrate holder is attached to the vacuum container. It may be movable, or conversely, the substrate holder may be fixed to the vacuum container and the voltage introducing terminal may be movable with respect to the vacuum container.

[0021]

When plasma is generated, the plurality of embedded electrodes are brought to the same potential state. At this time, a potential difference occurs between the substrate self-biased by the plasma and the embedded electrode, electric charges are accumulated in the vicinity of the surface of the dielectric layer between the two, and the substrate is attracted to the substrate holder. Since the potential difference between the substrate and the embedded electrode is the same between any of the embedded electrodes, the entire substrate is uniformly adsorbed during the plasma processing.

When no plasma is generated, the plurality of embedded electrodes are brought into different potential states. At this time, a potential difference is generated between the embedded electrodes, and the substrate is affected by the electric field to an intermediate potential. As a result, charges are accumulated near the surface of the dielectric layer and the substrate is attracted to the substrate holder. . As a result, the substrate can be adsorbed before the plasma is generated, and the substrate can be cooled in advance.

Further, the substrate holder or the voltage introducing terminal is made movable with respect to the vacuum container, and a moving body capable of contacting the voltage introducing terminal is provided on the back side of the high frequency applying electrode, so that the substrate holder or the voltage introducing terminal is provided. It is possible to switch between the same-potential state and the different-potential state of the embedded electrode simply by moving.

[0024]

1 is a front sectional view of a single-wafer processing parallel plate type reactive ion etching apparatus equipped with an embodiment of an electrostatic chuck of the present invention. Grounded vacuum container 10
A vertically movable substrate holder 12 and a grounded counter electrode 14 are installed therein in parallel with each other. A high frequency applying electrode 16 is provided inside the substrate holder 12.
Are arranged, and the high-frequency applying electrode 16 and the counter electrode 14 constitute an electrode for high-frequency plasma generation. There is a dielectric layer 18 on the high-frequency applying electrode 16, and inside the dielectric layer 18, a dielectric layer 18 is provided so as to be insulated from plasma.
The embedded electrodes 20 and 21 are embedded. The upper surface of the dielectric layer 18 serves as a substrate mounting surface on which the substrate 22 is placed. The dielectric layer 18 is composed of alumina containing titanium oxide. A suitable thickness of this alumina film (upper side of the embedded electrode) is about 300 μm. When a polyimide film is used instead of the alumina film, its thickness is preferably 50 to 70 μm.

The periphery of the high frequency applying electrode 16 and the dielectric layer 18 is covered with an insulator block 24, and a metal shield 26 is provided outside the insulator block 24. A passage for passing cooling water is formed inside the high frequency applying electrode 16. In this specification, the substrate holder 12 is composed of a metal shield 26 and an internal structure (high-frequency applying electrode 16, dielectric layer 18 and embedded electrodes 20, 21).

A cavity 28 is formed in the insulator block 24, and the cavity 28 is open on the back side of the horizontal portion of the high frequency applying electrode 16 (the side opposite to the substrate 22). Inside the cavity 28, a moving body 30 is arranged slidably in the left-right direction in the drawing. A conductor 32 made of amorphous carbon is formed on the upper surface of the moving body 30.
The other parts of are made of fluororesin.

A high frequency power source 36 is connected between the high frequency applying electrode 16 and the ground via a blocking capacitor 34, and a first DC power source 40 is connected in parallel with the high frequency power source 36 via a switch 38. . First switch 3
Reference numeral 8 serves to selectively connect the high frequency applying electrode 16 to the first DC power supply 40 and the ground. Vacuum container 10
The voltage introduction terminal 42 is fixed to the
A second DC power supply 48 is connected between the voltage introducing terminal 42 and ground via a second switch 46.
The second switch 46 plays a role of connecting the voltage introduction terminal 42 to the second DC power source 48 or disconnecting it from the second DC power source 48.

FIG. 3 is an enlarged front sectional view showing the inside of the substrate holder. FIG. 3A shows the state when the substrate holder is at the upper position, and FIG. 3B shows the state when the substrate holder is at the lower position. In FIG. 3A, the high frequency applying electrode substrate 16 includes a vertical portion 50 and a horizontal portion 52 at the upper end thereof. First embedded electrode 20
Is composed of a vertical portion 54 and a horizontal portion 56 at the upper end thereof, and the lower end of the vertical portion 54 is DC-connected to the horizontal portion 52 of the high frequency applying electrode 16. The second embedded electrode 21 is composed of a vertical portion 58 and a horizontal portion 60, and the vertical portion 58 penetrates the through hole of the horizontal portion 52 of the high frequency applying electrode 16 through the insulating material 62, and the vertical portion 58 High frequency application electrode 1 at the lower end
6 is exposed on the back side of the horizontal portion 52.

The moving body 30 arranged inside the insulator block 24 is made of fluororesin except for the conductor 32 on the upper surface. The right side surface of the moving body 30 is formed of fluororesin up to its upper end. The lower surface of the moving body 30 is an inclined surface 64. A concave portion 66 is provided on the left side surface of the moving body 30.
A compression coil spring 68 is coupled between the recess 66 and the insulator block 24. When no force is applied to the moving body 30, the compression coil spring 68 becomes free and the moving body 30 stands still at the position shown in the figure. In this state, the lower end of the vertical portion 58 of the second embedded electrode 21 contacts the conductor 32 of the moving body 30, and this conductor 32
On the other hand, it contacts the back surface of the horizontal portion 52 of the high frequency applying electrode 16. Therefore, in the state shown in FIG. 3 (A), both the first embedded electrode 20 and the second embedded electrode 21 are in a state of being DC-connected to the high frequency applying electrode 16.

When the substrate holder is lowered to the lower position, the voltage introduction terminal 42 enters the cavity 28 through the through hole 70 of the insulator block 24, as shown in FIG. Then, the tip of the voltage introducing terminal 42 comes into contact with the inclined surface 64 of the moving body 30 to move the moving body 30 to the compression coil spring 68.
Move to the left against. As a result, the conductor 32 of the moving body 30 separates from the second embedded electrode 21, while
The upper end of the voltage introduction terminal 42 contacts the second embedded electrode 21. Therefore, in the state shown in FIG.
Of the embedded electrode 20 is directly connected to the high-frequency applying electrode 16, and the second embedded electrode 21 is connected to the voltage introduction terminal 4
Connected to 2.

In this embodiment, the first embedded electrode 20
Is always connected to the high-frequency applying electrode 16 in a direct current manner, so that only one voltage introducing terminal 42 needs to be provided for the second embedded electrode 21.

FIG. 4 is a plan view showing an example of the shape of the embedded electrode. In FIG. 4A, two embedded electrodes 2
The numerals 0 and 21 are semicircular, and the periphery thereof is covered with the dielectric layer 18. In this way, the electrostatic attraction force can be increased by increasing the area of the embedded electrode. FIG. 4B shows another example of the shape of the embedded electrode, which includes two embedded electrodes 20a,
21a are combined in a spiral shape. In addition to these examples, the number and shape of embedded electrodes can be arbitrarily selected.

Next, returning to FIG. 1, the operation of the electrostatic chuck of this embodiment will be described. When etching the substrate 22, the substrate holder 12 is placed in the upper position as shown in FIG. In this state, high frequency power is applied to the high frequency applying electrode 16 to generate plasma. The first switch 38 is set to the side of the first DC power source 40, whereby the DC voltage of −500 V is superimposed on the high frequency applying electrode 16. On the other hand, the second switch 46 is opened and the voltage introduction terminal 42 is disconnected from the second DC power supply 48. Both of the two embedded electrodes 20 and 21 are connected to the high-frequency applying electrode 16 in a DC manner as described above, and thus have a potential of −500V. When plasma is generated above the substrate 22, a negative self-bias voltage (minus about 100 V) is generated on the substrate 22. Thereby, the dielectric layer 18
A potential difference is generated above and below, and the substrate 22 is attracted to the substrate holder 12 by electrostatic force.

During the plasma processing, the two embedded electrodes 20 and 21 have the same potential as the high frequency applying electrode 16 as described above, so that unnecessary discharge can be prevented from occurring around the high frequency applying electrode 16. .

FIG. 2 is a front sectional view showing a state where the substrate holder 12 is lowered to the lower position. At this time,
As described in FIG. 3B, the second embedded electrode 21 is connected to the voltage introduction terminal 42. First switch 38
Is switched to the ground side, so the high frequency application electrode 16
Then, the first embedded electrode 20 becomes the ground potential. On the other hand, since the second switch 46 is closed, the voltage introduction terminal 46
Then, −1000 V is applied to the second embedded electrode 21. As a result, the two embedded electrodes 20 and 21
A potential difference of 1000 V is generated between the two, and the substrate 22 becomes an intermediate potential under the influence of this electric field, and the dielectric layer 18
There is still a potential difference above and below. As a result, the substrate 2
2 is attracted to the substrate holder 16.

Next, the operation of etching the substrate using such an electrostatic chuck will be described. In the following description, a case where a silicon oxide film grown on a silicon substrate is patterned with a photoresist and this is etched will be described as an example. First, the inside of the vacuum container 10 is evacuated to a vacuum by a vacuum pump (not shown). next,
As shown in FIG. 2, the substrate holder 12 is lowered to a lower position, and the substrate 22 is conveyed by a robot or the like via a load lock and placed on the surface of the dielectric layer 18 of the substrate holder 12.
A mixed gas of CHF ₃ and C ₂ F ₆ is introduced into the vacuum container 10 through a gas inlet (not shown), and the pressure is set to 1 Torr. The high frequency applying electrode 16 is cooled by cooling water. In this state, the second switch 46 is closed, and the second DC power supply 48 causes the second embedded electrode 21 to have a minus 100.
Apply 0V. On the other hand, with the first switch 38 set to the ground side, the high frequency applying electrode 16 and the first embedded electrode 20
To ground potential. As a result, the substrate 22 is adsorbed to the substrate holder 12 and the substrate 2 is retained before the etching process.
2 can be forced to cool.

Next, as shown in FIG. 1, the substrate holder 1
Raise 2 to the upper position. As a result, the moving body 30 returns to its original state, and the second embedded electrode 21 is also connected to the high frequency applying electrode 16. At this point, the substrate is already well cooled. 13.56MHz by high frequency power supply 36,
A high frequency power of 600 W is applied to the high frequency applying electrode 16, the first switch 38 is connected to the DC power source 40 side, and a negative 500 V DC voltage is superimposed on the high frequency applying electrode 16. Since the two embedded electrodes 20 and 21 are connected to the high frequency applying electrode 16 in a direct current manner, both of them have a voltage of −500V. The substrate 22 has a self-bias voltage (about −100 V), and the substrate 22 is attracted to the substrate holder 12.

When high frequency power is applied, plasma is generated in the space between the high frequency applying electrode 16 and the counter electrode 14, and a negative self-bias voltage (about 100 V) is applied to the substrate 22.
Occurs, the ions in the plasma are attracted to the substrate 22, and the interaction between the ions and the active radicals generated by the plasma causes the substrate 22 to be subjected to so-called reactive ion etching (RIE). Since the substrate 22 is uniformly adsorbed on the substrate holder 12 during etching, the substrate temperature does not rise so much and is uniform within the substrate. Therefore, a high selection ratio with respect to silicon can be obtained while maintaining excellent uniformity in the surface of the substrate.

By the way, it takes some time after the plasma is generated until a self-bias voltage is generated on the substrate 22 and sufficient charges are accumulated in the dielectric layer.
However, since the substrate has been adsorbed and cooled in advance since the substrate holder 12 was at the lower position,
It is less likely that the substrate will be heated to an unnecessarily high temperature immediately after the plasma is generated. As a result, it was possible to prevent the temperature of the substrate from rising in the initial stage of etching even in the etching under the condition that the high frequency power was increased. In addition, since the temperature change of the substrate during etching is almost eliminated, the phenomenon that the etching shape changes during the etching is not seen, and it is possible to etch the taper-shaped hole from the vertical while controlling the shape. It was

The present invention is not limited to the above-described embodiment, but the following modifications are possible. (1) Instead of moving the substrate holder up and down, the substrate holder may be stationary and the voltage introducing terminal may be moved up and down. That is, the voltage introducing terminal is raised when the substrate is attached to and detached from the substrate holder, and the voltage introducing terminal is lowered when etching is performed by plasma. Even in this case, the relationship between the voltage introducing terminal and the moving body is exactly the same as in the above-described embodiment.

(2) In the above embodiment, an example of the etching process by the ordinary parallel plate type etching apparatus was explained, but the present invention is also applied to the ECR etching apparatus for generating high density plasma and the helicon wave plasma etching apparatus. it can. In particular, in an etching apparatus that uses high-density plasma at such a low pressure, the temperature of the substrate rises greatly, so the effect of using the present invention is great. Further, the present invention provides
Besides the dry etching apparatus, it can be applied to a film forming apparatus such as a plasma CVD apparatus or a sputtering apparatus.

(3) The voltage of the electrostatic chuck, the material to be etched, the type of gas, the high-frequency power, the etching pressure, etc. used in the above-mentioned embodiment are not particularly limited to these values, and may be as necessary. Can be changed accordingly.

(4) The first DC power supply and the second DC power supply can be shared by one power supply. Further, high-frequency filters may be connected in series to the first DC power supply and the second DC power supply, respectively, in order to prevent the high frequency from being superimposed on the DC power supply.

(5) The moving structure of the moving body is not limited to the above embodiment, and another moving mechanism may be used.

[0045]

When plasma is generated, a plurality of embedded electrodes are set to the same potential state to generate an attraction force between the self-biased substrate and the embedded electrodes.
At this time, since the potential difference between the substrate and the embedded electrode is the same between any of the embedded electrodes, the entire substrate is uniformly adsorbed and uniformly cooled during the plasma processing. When the plasma is not generated, the plurality of embedded electrodes are brought into different potential states to generate an attractive force between the substrate and the embedded electrodes. As a result, the substrate can be adsorbed before the plasma is generated, and the substrate can be cooled in advance.

[Brief description of drawings]

FIG. 1 is a front sectional view of an embodiment of an electrostatic chuck of the present invention.

FIG. 2 is a front cross-sectional view showing a state when the substrate holder is lowered to a lower position.

FIG. 3 is a front cross-sectional view showing an enlarged interior of a substrate holder.

FIG. 4 is a plan view showing a shape example of an embedded electrode.

[Explanation of symbols]

10 ... Vacuum container 12 ... Board holder 14 ... Counter electrode 16 ... High-frequency applying electrode 18 ... Dielectric layer 20 ... First embedded electrode 21 ... Second embedded electrode 22 ... Substrate 24 ... Insulator block 28 ... Cavity 30 ... moving body 32 ... Conductor 36 ... High frequency power supply 40 ... First DC power supply 42 ... Voltage introduction terminal 48 ... Second DC power supply

─────────────────────────────────────────────────── ─── Continuation of front page (58) Fields surveyed (Int.Cl. ⁷ , DB name) H01L 21/68 H02N 13/00 B23Q 3/15

Claims (5)

(57) [Claims] 1. An electrostatic chuck in a plasma processing apparatus for processing a substrate on a substrate holder using plasma generated in a vacuum chamber, wherein the substrate holder comprises a plurality of embedded electrodes electrically insulated from each other. A dielectric layer covering the embedded electrodes and having a surface serving as a substrate mounting surface, the plurality of embedded electrodes being at the same potential, and at least one embedded electrode being the other embedded electrode; between the different potential state to be different from the electrode potential, Ri electrically switchable der, when a plasma is generated in the vacuum vessel of the plurality
The embedded electrode is brought to the same potential state as described above, and plasma is generated.
If not, the plurality of embedded electrodes have the different potentials.
And place the high frequency applying electrode on the substrate holder.
In the potential state, all of the plurality of embedded electrodes are
Generated on the substrate while being connected to the high frequency applying electrode
Negative DC voltage with absolute value larger than negative bias voltage is high
It is superimposed on the frequency applying electrode, and in the different potential state,
At least one of a number of embedded electrodes is grounded.
Connected to the frequency application electrode and embedded in other
An electrostatic chuck characterized in that a negative DC voltage is applied to the electrodes. 2. Using plasma generated in a vacuum chamber
For plasma processing equipment that processes substrates on the substrate holder
In the electrostatic chuck, the substrate holder comprises a plurality of electrically insulated ones.
The embedded electrodes and their covering the embedded electrodes.
A dielectric layer whose surface serves as a substrate mounting surface.
The embedded electrodes of are in the same potential state where they are at the same potential
And at least one embedded electrode is the other embedded
Electrically between the electrode and the different potential state with different potential
Switchable, the substrate holder is perpendicular to the substrate mounting surface with respect to the vacuum container
Can be moved in any direction, and as the substrate holder moves.
To switch between the same potential state and the different potential state.
An electrostatic chuck characterized by that . 3. An electrostatic chuck in a plasma processing apparatus for processing a substrate on a substrate holder using plasma generated in a vacuum chamber, wherein the substrate holder has a plurality of embedded electrodes electrically insulated from each other. A dielectric layer covering the embedded electrodes and having a surface serving as a substrate mounting surface, the plurality of embedded electrodes being at the same potential, and at least one embedded electrode being the other embedded electrode; It is possible to electrically switch between the electrodes and different potential states with different potentials, and when plasma is generated in the vacuum container, the plurality of embedded electrodes are brought to the same potential state and plasma is generated. When not, the plurality of embedded electrodes are set to the different potential state, the high frequency applying electrode is installed on the substrate holder, and the plurality of embedded electrodes are set to the same potential state. Is that all of the plurality of embedded electrodes are connected to the high frequency applying electrode and a constant DC voltage is superimposed on the high frequency applying electrode , and in the different potential state,
At least one of the plurality of embedded electrodes is connected to the high frequency applying electrode, the high frequency applying electrode is set to a first potential, and the other embedded electrodes are set to a second potential different from the first potential state. The plurality of embedded electrodes are at least one first embedded electrode that is always connected to the high frequency applying electrode, and at least one second embedded electrode that is selectively connectable to the high frequency applying electrode. An electrostatic chuck comprising: 4. The back surface of the high frequency applying electrode has a cavity.
Covered with the insulating block, the moving body is inside this cavity.
Is placed, and the high frequency applying electrode side of this moving body is a conductor.
Is formed and the other part is made of an insulator,
The movement of the moving body moves the second embedded electrode.
Selectively connected to the high frequency applying electrode via the conductor of the moving body.
The electrostatic chuck according to claim 3, characterized in that. 5. A voltage introducing terminal is installed in a vacuum container,
The voltage input terminal of the
By moving in the direction perpendicular to the plate mounting surface,
The pressure introducing terminal comes into contact with the insulator of the moving body and moves it
As a result, the second embedded electrode is a high frequency applying electrode.
When the electrical connection with the
A contact with the second embedded electrode.
4. The electrostatic chuck according to 4 .