JP3483725B2 - Plasma processing apparatus and processing method - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION [0001] The present invention relates to a semiconductor and a liquid crystal display.
Plasma used in the manufacture of spray wafers, etc.
In connection with the processing equipment, for example,
Plasma processing suitable for processing such as ashing to remove
Related to a physical device. [0002] 2. Description of the Related Art Generally, a reactive component is used for the production of a semiconductor device.
Plasma processing using plasma is widely used.
Plasma is a general term for ionized gas, but it is used in semiconductor manufacturing, etc.
Discharge plasma used for fusion is fusion plasma
Different character, relatively low ionization degree and lower than gas temperature
It has features such as extremely high electron temperature. That
Reaction that cannot be performed at room temperature
States Generated by Collisions between Gas Molecules and Electrons
Generated by dissociation of molecules and processing gas molecules
Can produce chemically active species, such as each dissociated species
You. The reaction between these active species and the wafer and the processing
Ions generated by ionization of gas enter the wafer.
The plasma treatment is performed using the irradiation. [0003] A plasma processing apparatus for performing a plasma processing includes:
Depending on the difference of the plasma source, the capacitively coupled plasma processing
Processing equipment, inductively coupled plasma processing equipment, magnetic field type microphone
It is classified into a microwave plasma processing apparatus and the like. Of these,
Inductively coupled plasma processing equipment has a high plasma generation efficiency.
Charged to metal surface due to high and electrodeless discharge
Generates high-density plasma with less particles escaping
Features and simpler device configuration.
Therefore, it has attracted attention in recent years. This inductive coupling type
Known examples of the plasma processing apparatus include, for example,
JP-A-7-37697, JP-A-2-235332
JP, JP-A-7-302694, and JP-A-Hei-8
No. -78191. That is, Japanese Patent Application Laid-Open No. 7-37697 discloses
Wraps the antenna in a coil around the side of the cylindrical reaction chamber
An etching apparatus having an attached structure is disclosed.
In Japanese Unexamined Patent Publication No. 2-235332, a vortex is formed on the surface facing the wafer.
Etching deposition of a structure with a wound antenna
And Japanese Patent Application Laid-Open No. 7-302694.
In the gazette, an antenna is wound around the outer surface of a dome-shaped chamber.
An ashing device having an attached structure is disclosed. Above 3
Each of the two structures allows high-frequency current to flow through the antenna.
More generation and maintenance of plasma. In addition,
According to Japanese Patent Application Laid-Open No. 8-78191, two systems
Attach the coils (outer coil, inner coil)
By changing the power supplied to the coil of
The outer plasma generated just below the outer coil and the inner coil
The density of the inner plasma generated below can be controlled appropriately.
A switching device is disclosed. [0005] [Problems to be solved by the invention] (1) Dealing with larger wafer diameter By the way, in recent years, silicon wafers have been
From 6.8 inches to 12 inches and even 16 inches
And growing. Therefore, such a large diameter
Plasma processing equipment that can process wafers uniformly is required
ing. For that purpose, the above four conventional plasma treatments
It is conceivable to increase the diameter of the reaction vessel of the apparatus. So
For the case where each reaction vessel is enlarged,
Next, we discuss. (1-A) JP-A-7-37697 Almost the same as the plasma processing apparatus disclosed in JP-A-7-37697.
In an etching device with a similar structure, the reaction vessel
FIG. 5 shows the structure in the case of the conversion. In FIG.
The winding device 100 is an antenna wound around the side of the reaction chamber 101.
A high-frequency current from a high-frequency power supply 103 flows through the tener 102
As a result, a plasma 104 is generated in the reaction chamber 101.
You. At this time, as a unique feature of the inductive coupling type, the antenna
Strong plasma is generated near 102. So simple
By simply increasing the diameter of the reaction vessel 101, the wafer 1
The processing speed (etching rate) of FIG.
As long as there is a double peak at 105 on the wafer
It becomes cloth and it becomes difficult to make the processing speed uniform in the radial direction. Ma
In order to eliminate such an etching rate distribution,
It is conceivable to increase the amount of high frequency power. But
In this case, the introduction of plasma as the plasma density increases
The skin effect has become more pronounced due to the increased electrical
As the plasma density near the antenna further increases,
(C) Only the etching rate at the outer periphery can be further increased
There is. (1-B) JP-A-8-78191 In the known etching apparatus, the outer peripheral coil and the inner coil are used.
The power supplied to the outer coil is changed independently to
The density of plasma and inner plasma can be controlled.
Even when the diameter of the reaction vessel is increased, the outer and inner circumferences
The processing speed in the radial direction by adjusting the
It is designed to be unified. However, this structure
In actuality, the inner coil and the inner coil
Plasma is also generated between immediately below and as a result,
The plasma and the inner peripheral side plasma may be combined. So
Therefore, the above control does not work well and the radius of processing speed
The direction uniformity may be insufficient. (1-C) JP-A-2-235332
And JP-A-7-302694 The etching data disclosed in JP-A-2-235332 is disclosed.
Positioning device and Japanese Patent Application Laid-Open No. 7-302694.
In the case of a large-diameter reaction vessel in a washing device
In particular, inconveniences such as the above (1-A) and (1-B)
Does not occur. (2) Correspondence to high pressure and large flow gas By the way, such as ashing, etching, deposition
All plasma treatments use plasma in the reaction chamber.
The generated active species are transported onto the wafer, and a table
It is performed by a surface reaction. The transport of this active species is by diffusion.
And transport by gas flow coexist
Which is the main transport depending on the type of plasma processing
Or different. That is, for example, in etching,
Since the directionality of ions incident on the wafer is required, it is relatively
Low-pressure processing gas is used.
In treatment, transport by diffusion is completely dominant.
You. Therefore, the density of the plasma generated in the reaction
If the radial direction is equalized, the processing speed in the radial direction
It is possible to achieve uniformity. The above (1) is based on this viewpoint
Radial direction of the plasma density generated in the reaction vessel
It discusses homogenization. On the other hand, in ashing, for example,
Since the directionality of the ions incident on c is not so required,
Relatively high pressure (for example, several hundred millitorr to several Torr)
Uses processing gas with a large flow rate (for example, several hundred to several thousand sccm)
You can. In such plasma treatment, active species
Transport is affected by gas flow as well as diffusion. An example
For example, the diffusion coefficient of O in O2 at 30 ° C. and 1 Torr.
Number is about 200cm^Two/ S, but the same 30 ° C,
1 Torr O2 gas into a 20 cm diameter cylindrical container
000 sccm, the average gas flow rate is about 90 cm /
s. Under these conditions, transport of the active species is not complete.
It is not completely diffusion-controlled and is affected by gas flow
It becomes Therefore, the processing speed should be made uniform in the radial direction.
In order to achieve this, factors on the side of the plasma to be generated (generation position,
As well as factors on the processing gas side (gas flow
It is also necessary to consider the flow velocity distribution in the radial direction. However
However, all of the above-mentioned known techniques (Japanese Patent Laid-Open No. 7-376)
No. 97, JP-A-8-78191 and JP-A-2-78.
JP-A-235332 and JP-A-7-302694
In all cases, the factors on the processing gas side
Not considered. Ashing large wafers
In such cases, it is important to make the processing speed uniform enough.
Have difficulty. The present invention has been made in view of the above-mentioned problems of the prior art.
The purpose of this is for large-diameter wafers.
Even when performing plasma processing such as ashing, the processing speed
Plasma processing apparatus and
And a plasma processing method. [0012] Means for Solving the Problems (1) To achieve the above object
In order to achieve this, the present invention provides an
An annular plasma generation region is formed at multiple locations in the radial direction.
And the plasma generation region of the reaction vessel wall surface
The processing gas is applied to a plurality of locations in the radial direction located almost directly above.
Each gas introduction means to be introduced into the plasma generation area is shaped
Gas flow introduced from these multiple gas introduction means
Gas control means for controlling each
The plasma generation region being radially adjacent to the plasma generation region;
At least one antenna for applying an electric field to the generation area
Power supply means for supplying power to this antenna.
From the plurality of plasma generation regions in the reaction vessel.
A mounting means for mounting an object to be processed is provided below, and the reaction vessel is provided.
Gas exhaust means below the placing means on the wall
Plasma generated in the plasma generation region.
To process the object usingTogether with the reaction volume
The vessels are continuously arranged in the height direction so that
Provided with a plurality of covered cylindrical portions having different diameters from each other.
A plurality of covered cylinders near the inner peripheral surface
And each of the antennas includes the plurality of antennas.
Are arranged along the outer peripheral surface of the
The power supply means is controlled by a power supply control means.
Power supplied to the plurality of antennas according to
Adjusted and supplied separately and independently, the plurality of gas introduction means
Each of the plurality of covered cylindrical portions is provided on a lid portion.
Is the thing. Formed at multiple radial locations in the reaction vessel
Processing gas from the gas introduction means into the
And an electric field is applied by the antenna.
A plasma is generated in the generation region. And this plasma
The active species generated by the gas flow into the gas exhaust means
To be processed, which is transported downward by the
It reacts with the surface of the object and performs a predetermined treatment. At this time,
Of each plasma generated in multiple plasma generation areas
Depending on the density, adjust the gas flow from the gas introduction
Controlled by control means. Thus, for example, the processing gas pressure
Power 0.1 to 10 Torr, total gas flow 500 s
Influence of gas flow, such as ashing performed over ccm
When performing a plasma treatment that is subject to
In addition, consideration can be given to factors on the processing gas side.
You. For example, the plasma density is relatively uniform in the radial direction.
If so, keep each gas introduction
Make the gas flow from the stage approximately equal, and
If the density is high on the outside in the radial direction and low on the inside,
Reduce the gas flow rate of the outer gas introduction means to correct
In addition, it is necessary to increase the gas flow rate of the
it can. Therefore, even if the wafer becomes large in diameter,
Radius of processing speed while securing a certain high processing speed
The direction distribution can be made sufficiently uniform. [0013] [0014] [0015] [0016] [0017] BRIEF DESCRIPTION OF THE DRAWINGS FIG.
It will be described with reference to FIG. FIG. 1 shows a first embodiment of the present invention.
A more detailed description will be given. The present embodiment is an example of a plasma processing apparatus
Of an inductively coupled ashing device as an example
It is an embodiment. FIG. 1 shows an ashing device according to the present embodiment.
It is a sectional side view showing the whole structure of a device. In this Figure 1
The ashing apparatus 1 includes a processing chamber which is a reaction vessel.
2, gas inlets 3U and 3L as gas introducing means,
Gas controller 4 and mass flow controller
Controllers 5U and 5L and a coil-shaped antenna for plasma generation.
Antennas 6U and 6L, and a high-frequency power supply unit serving as power supply means
7L, 7U, stage 8 as a mounting means, gas exhaust
An exhaust port 9 serving as a means, extending in the circumferential direction, and having a substantially annular shape.
Plasma generation regions 10U and 10L forming a processing chamber
2 at two radial positions. And Assin
Device 1 is provided in each of the plasma generation regions 10U and 10L.
To generate a substantially annular plasma (see the figure).
An object to be processed placed on the stage 8 using plasma
Ashing of the semiconductor wafer 11 is performed.
You. The chamber 2 has a larger diameter as it goes down.
Two lids coaxially different in diameter arranged continuously in the height direction
The cylindrical portions 2U and 2L, and the lower portion of the covered cylindrical portion 2L further below.
And a base chamber section 2A arranged in the section.
The plasma generation regions 10U, 10L are covered cylindrical portions 2U, 2
L are formed near the inner peripheral surface. Also covered circle
The cylindrical portions 2U and 2L are made of a dielectric material, and
The member 2A is made of, for example, aluminum. The gas inlets 3U and 3L are provided on the wall of the chamber 2
Of the plasma generation regions 10U and 10L
Two locations in the radial direction (one location is the position of area 10U,
One position is the position of the area 10L), specifically, the covered cylindrical portion 2
U and 2L are provided on the lids 2Ua and 2La, respectively.
The processing gas is supplied to the plasma generation regions 10U and 10L.
Each is introduced. At this time, the lid
2Ua is a substantially disk-shaped surface, and the lid 2La is a substantially annular surface.
The gas inlet 3U has a large number in the circumferential direction of the lid 2Ua.
(Only two places are shown in the figure)
The body constitutes one gas introduction means, and the gas introduction port 3L has a lid
Numerous locations in the circumferential direction of the portion 2La (only two locations are shown in the figure)
), And as a whole, another gas introduction means
Is composed. In addition, a large number of gas
A header 12U for distributing gas to the inlet 3U
The upper part of the lid 2La has many gas inlets 3L.
A header 12L for distributing gas is provided. The mass flow controllers 5U and 5L are
The opening is controlled according to the control signal from the controller 4.
Provided with respective electromagnetic valves (not shown). You
That is, the gas controller 4 is operated (manually or
Automatic control by a computer, etc.)
-Adjust the opening of the controllers 5U and 5L and adjust the gas source (Fig.
Headers 12U, 12L and gas supply
Through the inlets 3U and 3L, respectively, into the covered cylindrical parts 2U and 2L
Gas flow rates can be controlled separately and independently.
ing. The antennas 6U and 6L have two covered cylindrical portions.
Along the outer peripheral surfaces 2Ub, 2Lb of 2U, 2L, respectively.
And each of the plasma generation regions 10U,
It is radially adjacent to 10L. These antennas 6
U and 6L are supplied with power from the high frequency power supply units 7U and 7L.
Supplied to the plasma generation regions 10U and 10L, respectively.
A field is applied to generate plasma. This
In this case, the high frequency power supply units 7U and 7L
Operates in response to the control signal of the power controller 13
It has become so. That is, the power controller 13
Is manually operated, the high-frequency power supply units 7U and 7L
Adjust operation and separate power supplied to antennas 6U and 6L.
It is possible to adjust the power distribution ratio independently by adjusting
You. The high-frequency power supply units 7U, 7L and the antennas 6U, 6
L and a matching device for impedance matching
14L and 14U are provided respectively. The stage 8 is used for generating plasma in the chamber 2.
The wafer 11 is disposed below the formation regions 10U and 10L.
Is to be placed. Stage 8 includes post-processing
Wafer 11 is held by an arm of a transfer system (described later).
Push rod 15 for easy operation and substrate temperature
The heater 16 for adjusting the degree and the deviation of the wafer 11 are prevented.
Susceptor 18. In addition, the heater 16
The external DC power supply 17 and the stage controller 20
Thus, the temperature of the wafer 11 can be adjusted. Also baseball
Position corresponding to the side of the wafer 11 on the wall surface of the chamber section 2A
Is an on-off valve 1 for loading / unloading the wafer 11 from outside.
9 is provided, and the on-off valve 19 is opened.
And the arm of the transfer system (not shown)
Entry / exit through the chamber, and transfer of the wafer 11 is performed. The exhaust port 9 is connected to a stay on the wall of the chamber 2.
Vacuum evacuation (not shown)
Connected to the means. The assembly of the present embodiment configured as described above
In the radial direction in the chamber 2
Gas is formed in the plasma generation regions 10U and 10L formed in
When the processing gas is introduced from the inlets 3U and 3L respectively
In both cases, an electric field is applied by antennas 6U and 6L, and each plasma is generated.
Plasma is generated in the formation regions 10U and 10L. And
The active species generated by this plasma are sent to the gas outlet 9.
The gas is transported downward by the flowing gas flow and is placed on the stage 8
The ashing process is performed by reacting with the surface of the placed wafer 11.
U. At this time, two plasma generation regions 10 in the radial direction are used.
Depending on the density of each plasma generated in U, 10L,
The gas flow rate from the gas inlets 3U and 3L is
Controlled by the gas controller 4 via the trawler 5. this
Thus, for example, the processing gas pressure is 0.1 to 10 Torr,
Ashing with a total gas flow of 500 sccm or more
When performing, for example, the plasma density in the radial direction
If it is relatively uniform, keep each gas
Gas flows from the inlets 3U and 3L are almost equal.
For example, if the plasma density is high on the outside in the radial direction and low on the inside
The gas inlet on the outside to correct this.
Reduce the gas flow rate of 3 L
Flow rate can be increased. Therefore, to some extent
Radial distribution of processing speed while ensuring high processing speed
Can be sufficiently uniformized. The gas inlets 3U and 3L are provided with
By arranging the exhaust port 9 at the lower part, the processing gas is blocked.
Since it passes through all of the plasma generation areas 10U and 10L,
High generation efficiency of sex species can be ensured, and harmful to treatment procedures
Can also be efficiently exhausted. In addition,
The power supplied to the plasma from the antennas 6U and 6L is
With the power controller 13 via the high-frequency power supply units 7L and 7U
Because it can be controlled independently,
Control the radial distribution of active species in the
The direction distribution can be made sufficiently uniform. For example,
When the plasma density is high on the outside in the radial direction and low on the inside
Reduces the power of the outer antenna 6L to correct this.
Increasing the power of the small and inner antenna 6U
Can be. At this time, the two covered cylindrical portions 2U and 2L
Are different from each other in diameter and height.
191 between the outer antenna and the inner antenna
Possibility that plasma makes it difficult to control the distribution of active species
There is no. In the first embodiment, 2
Two high-frequency power supply units for system antennas 6U and 6L
7U and 7L are provided, and power distribution to them is made variable.
However, it is not limited to this. That is, the gas controller 4
Of processing speed distribution by just adjusting gas flow
When the antenna can be obtained, two antennas 6U and 6L are connected.
Connect one RF power supply in series (or parallel)
The power distribution ratio of the antennas 6U and 6L may be fixed. Ma
In the first embodiment, the covered cylindrical portion 2U,
2L are provided, and the plasma generation region 10
U, 10L, gas inlets 3U, 3L, antennas 6U, 6
L, etc. are provided two by two, but this is not a limitation.
It may be. In this case, a similar effect is obtained. further,
As a modified example of the first embodiment, as shown in FIG.
The outer peripheral surface 2Ub of the cylindrical portion 2U is extended downward to generate plasma.
Even if it is made to clearly separate the formation regions 10U and 10L
Good. In this case, a similar effect is obtained. A second embodiment of the present invention will be described with reference to FIG.
I do. In the present embodiment, as in the first embodiment, an inductive coupling type
It is an embodiment of an ashing device. Same as the first embodiment
The same reference numerals are given to members such as
Functionally corresponding members are numbered with 200 added.
The description is omitted as appropriate. FIG. 3 shows the present embodiment.
FIG. 2 is a side sectional view illustrating the entire structure of the ashing device. This
In FIG. 3 of the first embodiment, the ashing device 201 is a first embodiment.
As in the case of the ashing device 1 of the embodiment,
A chamber 202 and a gas inlet 203 serving as a gas introducing means.
U, 203L and gas controller as gas control means
204 and mass flow controllers 205U, 205L
, A coiled antenna 206, and a high
Frequency power supply 207, stage 8 as a mounting means, gas
An exhaust port 9 serving as an exhaust means, extending in the circumferential direction, and
Processing of annular plasma generation regions 210U and 210L
It is formed at two locations in the radial direction in the chamber 202. So
Then, the ashing apparatus 201
Each of 210U and 210L has a substantially annular plasma (FIG.
), And the plasma is used for stage 8
The semiconductor wafer 11 which is the object to be processed placed on the
It is designed to perform singing. The chamber 202 includes one closed cylindrical portion 20.
2B and the inner peripheral side of the covered cylindrical portion 202B.
Inner cylindrical part 202C and further below covered cylindrical part 202B
And a base chamber section 202A disposed in the section.
The plasma generation regions 210U and 210L are
Formed near the outer peripheral surface and the inner peripheral surface of the portion 202C, respectively.
Have been. The inner cylindrical portion 202C is made of a dielectric material.
It is configured. The gas inlets 203U and 203L are covered circles.
It is provided on the lid 202Ba of the cylindrical portion 202B.
Of the gas inlet 203U is inside the covered cylindrical portion 202B.
A processing gas is introduced into the inner cylindrical portion 202C, and the other gas is introduced.
The inlet 203L is the inner circle of the inside of the covered cylindrical portion 202B.
A process gas is introduced outside the cylindrical portion 202C.
I have. Note that, at this time, the lid 202Ba has a substantially disc-shaped surface.
The gas inlet 203U (or 203L) has a lid
Many portions in the circumferential direction of the portion 202Ba (only two portions
) And one gas introduction means for all of them
Make up. In addition, a large number of
For distributing gas to the gas inlets 203U and 203L
A header 12 is provided. The antenna 206 is attached to the inner cylindrical portion 202C.
It is arranged in a buried form and has a plasma generation region 2
10U and 210L are radially adjacent. This Ann
The electric power from the high frequency power supply 207 is supplied to the tenor 206.
To the plasma generation regions 210U and 210L, respectively.
A field is applied to generate plasma. What
In addition, between the high frequency power supply 207 and the antenna 206,
A matching device 214 for impedance matching is provided.
ing. The assembly of the present embodiment configured as described above
The assembling apparatus 201 according to the first embodiment
As in the first embodiment, the plasma generation regions 210U and 210L
Gas inlet 203 according to the density of each plasma generated
U, 203L, the gas flow rate from the gas controller 204
Control to ensure a certain high processing speed
In addition, the distribution of the processing speed in the radial direction can be made sufficiently uniform.
In addition to this, the inner circle in which the antenna 206 is embedded
Plasma is generated on both the inner and outer peripheral sides of the cylindrical portion 202c.
Plasma generation effect on input power
There is also an effect that the rate can be increased. A third embodiment of the present invention will be described with reference to FIG.
I do. This embodiment is an implementation of a capacitively coupled ashing device.
It is a form. In the members equivalent to the first and second embodiments,
The same reference numerals are given and the functions are the same as those of the first and second embodiments.
The corresponding members are numbered with 300 added.
The description is omitted. FIG. 4 is a diagram illustrating an update according to the present embodiment.
It is a sectional side view showing the whole structure of a singer. This figure 4
In the ashing device 301, the first and second
As with the ashing apparatuses 1 and 201 of the embodiment, the reaction vessel
A certain processing chamber 302 and a gas introduction
Gas inlets 303U and 303L and gas control means
Controller 304 and mass flow controller 305
U, 305L and an outer cylindrical electrode 306 as an antenna
A, inner cylindrical electrode 306B, and central axis electrode 306C
, A high-frequency power supply 307 as a power supply unit, and a mounting unit
And the exhaust port 9 as a gas exhaust means.
A plasma generation region having a substantially cylindrical shape extending in the circumferential direction.
310U, 310L in the processing chamber 302 in the radial direction
It is formed in two places. And the ashing device 301
Is applied to these plasma generation regions 310U and 310L.
Each generates a substantially cylindrical plasma (see illustration),
An object to be processed placed on the stage 8 using plasma
Ashing of a certain semiconductor wafer 11
I have. The chamber 302 is made of a metal with a closed circle.
A cylindrical portion 302B and a lower portion of the covered cylindrical portion 302B
And a metal base chamber 302A disposed in
I have. The side wall of the covered cylindrical portion 302B is an outer cylindrical electrode.
306A. And the inner cylindrical electrode 306B
It is arranged on the inner peripheral side of the outer cylindrical electrode 306A,
The shaft electrode 306C is further inside the inner cylindrical electrode 306B.
The plasma generation region 31 is disposed at the radial center.
0U, 310L in the radial direction. Ie inside
The side cylindrical electrode 306B is connected to a high-frequency power source via a matching device 314.
307 while the outer cylindrical electrode 306A and the middle
The mandrel electrode 306C is grounded, thereby
Cylindrical electrode 306B and outer cylindrical electrode 306A or central axis
Plasma generation regions 310U, 310 between poles 306C
An electric field is applied to each of L to generate a substantially cylindrical plasma.
It has become so. The gas inlets 303U and 303L are made of an insulating material.
Is provided on the lid 302Ba of the covered cylindrical portion 302B.
Have been killed. One gas inlet 303U has an inner cylindrical electrode.
The processing gas is provided between the pole 306B and the central cylindrical electrode 306C.
And the other gas inlet 303L is an inner cylindrical electrode.
A processing gas is supplied between 306B and the outer cylindrical electrode 306A.
It is supposed to be introduced. At this time, the lid 302
Ba is a substantially disk-shaped surface, and the gas inlet 303U
(Or 303L) is a large number of locations in the circumferential direction of the lid 302Ba.
(Only two places are shown in the figure)
Constitute one gas introduction means. In addition, the lid 30
In the upper part of 2Ua, a number of gas inlets 303U, 303L are provided.
Is provided with a header 312 for distributing gas to
You. The assembly of the present embodiment configured as described above
Also in the first embodiment and the second embodiment.
As with the ashing apparatuses 1 and 201, the plasma generation region 3
According to the density of each plasma generated in 10U, 310L,
The gas flow rate from the gas inlets 303U and 303L is
Control by the controller 304,
Sufficient processing speed distribution in the radial direction
Can be made uniform. In the first to third embodiments,
Is an inductively coupled plasma processing apparatus as an example of a plasma processing apparatus.
Explains the case of application to a capacitively coupled ashing device
However, this is not a limitation, and other types of
An ashing device with a plasma source, or even an etch
Other plasma processing equipment, such as coating equipment and deposition equipment
May be applied. In this case, transport of active species is only diffusion
It is particularly effective when the gas flow is affected by the gas flow. [0038] According to the present invention, like ashing,
When performing plasma processing that is affected by gas flow,
The distribution for the processing gas side as well as the
Consideration becomes possible. Therefore, when the wafer diameter becomes large,
In some cases, the processing speed is secured while maintaining a certain high processing speed.
Can be sufficiently uniformized in the radial direction.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a side sectional view showing an entire structure of an ashing device according to a first embodiment of the present invention. FIG. 2 is a side sectional view showing the entire structure of an ashing device according to a modification of FIG. FIG. 3 is a side sectional view illustrating an entire structure of an ashing device according to a second embodiment of the present invention. FIG. 4 is a side sectional view showing an entire structure of an ashing device according to a third embodiment of the present invention. FIG. 5 is a side sectional view showing a structure in a case where a diameter of a reaction vessel is increased in an etching apparatus having a conventional structure. [Description of Signs] 1 Ashing device 2 Processing chamber (reaction vessel) 2U, L Covered cylindrical portion 3U, L Gas inlet (gas introducing means) 4 Gas controller (gas controlling means) 5L, U Mass flow controller (gas controlling means) 6L, U, antennas 7L, U High frequency power supply (power supply means) 8 Stage (mounting means) 9 Exhaust port (gas exhaust means) 10L, U Plasma generation area 11 Semiconductor wafer (workpiece) 13 Power controller (power) Supply control means) 201 Ashing device 202 Processing chamber (reaction vessel) 202B Covered cylindrical part 202C Inner cylindrical part 203U, L Gas inlet (gas introducing means) 204 Gas controller (gas controlling means) 205L, U Mass flow controller (gas controlling means) ) 206 antenna 207 high frequency power supply (power supply means) 2 10L, U Plasma generation region 301 Ashing device 302 Processing chamber (reaction vessel) 302B Covered cylindrical portion 303U, L Gas inlet (gas introducing means) 304 Gas controller (gas controlling means) 305L, U Mass flow controller (gas controlling means) 306A Outer cylindrical electrode (antenna) 306B Inner cylindrical electrode (antenna) 306C Center axis electrode (antenna) 307 High frequency power supply (power supply means) 310L, U Plasma generation area

Continued on the front page (72) Inventor Takeshi Yoshioka 794, Higashi-Toyoi, Katsumatsu-shi, Yamaguchi Prefecture Inside the Kasado Plant of Hitachi, Ltd. In a factory (56) References JP-A-6-267903 (JP, A) JP-A-8-78191 (JP, A) JP-A-2-235332 (JP, A) JP-A-7-37697 (JP, A) JP-A-7-302694 (JP, A) JP-A-9-82490 (JP, A) JP-A-7-114998 (JP, A) JP-A-9-237698 (JP, A) (58) Field (Int.Cl. ⁷ , DB name) H05H 1/46 C23F 4/00 H01L 21/027 H01L 21/205 H01L 21/3065 H01L 21/30 H01L 21/302

Claims (1)

(57) Claims 1. A plurality of plasma generation regions extending in the circumferential direction and forming a substantially annular shape in a reaction vessel are formed at a plurality of radial locations, and the plasma generation region is formed on the wall surface of the reaction vessel. Gas introduction means for introducing a processing gas into the plasma generation area are respectively formed at a plurality of radial positions substantially directly above the region, and the flow rates of the gases introduced from the plurality of gas introduction means are controlled independently and independently. Gas control means, at least one antenna that is adjacent to the plasma generation area in the radial direction and applies an electric field to the plasma generation area, and power supply means that supplies power to the antenna is provided; Mounting means for mounting an object to be processed below the plurality of plasma generation regions; and gas exhaust means below the mounting means on the wall surface of the reaction vessel. Formed, the process performs the treatment object using a plasma was generated in the plasma generation region, said reaction vessel, so that the diameter as the lower the height direction
Equipped with a plurality of successively arranged covered cylindrical parts of different diameters
The plurality of covered cylindrical portions are located near the inner peripheral surface.
Forming a zuma generation region, wherein the antenna
Are arranged along the outer peripheral surfaces of the plurality of covered cylindrical portions, respectively.
And the power supply means is provided with a power supply control.
Power supplied to the plurality of antennas under the control of the control means.
The power is adjusted and supplied independently of each other, and the plurality of
Means are provided on the lids of the plurality of covered cylinders, respectively.
A plasma processing apparatus, comprising: