JPH07106314A - Plasma treatment equipment - Google Patents

Abstract

PURPOSE:To enable restraining the damage of an electrostatic chuck sheet by applying voltage to an electrostatic chuck layer in order to attract an object to be treated on the electrostatic chuck layer by the effect of electrostatic force. CONSTITUTION:When a DC voltage is applied to the conductive film 41 of an electrostatic chuck sheet 4 by turning on a switch 44, a conductive path is formed through plasma and a chamber 2, polarization is generated on the insulative sheet of the electrostatic chuck sheet 4, and positive charges are generated on the contact surface side of the insulative sheet with the wafer W. On the other hand, since the wafer w has negative charges, electrostatic force is generated between the wafer W and the insulative sheet, the wafer W is attracted by the electrostatic chuck sheet 4 by the effect of electrostatic force. Since ceramic or quartz or insulative high polymer, which are used in the electrostatic chuck sheet 4, are materials of high withstand to reactive ions, the damage of the electrostatic chuck sheet 4 is very little.

Description

Detailed Description of the Invention

[0001]

FIELD OF THE INVENTION The present invention relates to a plasma processing apparatus.

[0002]

2. Description of the Related Art In the process of processing a semiconductor wafer, dry etching is carried out, for example, for the purpose of separating capacitors and elements or forming contact holes.
A parallel plate type plasma processing apparatus is known as a typical one of the conventional apparatuses for performing this dry etching.

FIG. 13 is a view showing a parallel plate type plasma processing apparatus. In a hermetic chamber 1, a mounting table 11 which also serves as a lower electrode is disposed on a supporting table 12, and above the mounting table 11. An upper electrode 13 serving also as a gas supply portion is arranged opposite to this. An electrostatic chuck sheet 14 made of an insulating material such as polyimide, the surface of which is a wafer mounting surface, is adhered to the upper surface of the mounting table 11 with an adhesive. Inside the electrostatic chuck sheet 14, a switch is provided. A conductive film 17 serving as an electrostatic chuck electrode connected to the DC power supply 16 via the portion 15 is provided.

In such a plasma processing apparatus,
First, the wafer W is placed on the electrostatic chuck sheet 14, the processing gas is introduced from the gas supply unit 13, and the electrode 1
A high-frequency power source (not shown) is applied between 1 and 13 to generate high-frequency power to generate plasma, and the reactive ions in the plasma etch the wafer W. In this case, a voltage is applied to the electrostatic chuck electrode 17 after plasma is generated, a conductive path is formed through the plasma, and the wafer W is attracted to the electrostatic chuck sheet 14 by electrostatic force.

By the way, although the line width of the device pattern tends to become finer and finer, the pressure in the chamber when plasma is generated in the above-mentioned apparatus is 100 mTo.
It is rr to 1 Torr, and at such a high pressure, the mean free path of the ions is small, so that fine processing is difficult.
Further, although the diameter of the wafer is increasing, it is difficult to perform uniform processing on a large-diameter wafer because it is not possible to secure high uniformity of plasma distribution over a wide surface if the mean free path of ions is small. There are also problems.

Therefore, recently, as described in European Patent Publication No. 379828 and Japanese Patent Laid-Open No. 3-79025, the upper surface of the chamber 1 facing the mounting table 11 is made of an insulating material such as quartz glass. Along with
A planar coil is fixed to the outside of this insulating material, a high-frequency current is passed through this coil to form an electromagnetic field in the chamber 1, and electrons flowing in this electromagnetic field collide with neutral particles of the processing gas to generate plasma. A high frequency induction method for generating is under consideration.

According to this method, a concentric circular electric field is induced according to the shape of the coil, and there is a plasma confinement effect, so that plasma is generated at a pressure considerably lower than that in the case of the conventional parallel plate type plasma processing apparatus. It is possible,
Therefore, the mean free path of the ions in the generated plasma is large, and therefore the etching process by this plasma is
Suitable for fine processing. The plasma diffuses from the high-density region to the low-density region, but since the mean free path of the ions is large, the plasma density distribution is smooth, and the uniformity of the plasma is high on the plane parallel to the wafer plane. The in-plane uniformity of plasma treatment is improved.

As described above, the high frequency induction method is noted as being suitable for the miniaturization of the line width of the pattern and the enlargement of the diameter of the wafer, but the process pressure is, for example, 10 ^-2 T.
There are some problems associated with this as it is much lower than orr. As one of them, there is a problem of impact of reactive ions on the electrostatic chuck sheet 14 on the mounting table 11. That is, the electrostatic chuck sheet 14 has a margin portion formed at the peripheral edge thereof for sandwiching the conductive film 17. On the other hand, mounting table 1
In order to uniformly adjust the temperature of the wafer W to 1 by 1, the mounting surface is preferably located as close as possible to the peripheral edge of the wafer W. For example, the diameter of the conductive film 17 and the diameter of the wafer W are When they are matched, the glue margin portion protrudes from the wafer W and the protruding portion is exposed to plasma. A method is also considered in which the peripheral portion of the mounting surface of the wafer W is curved and the glue margin portion is bent along the curved portion so that the peripheral edge of the conductive film 17 approaches the peripheral edge of the wafer W. Also in this case, the adhesive margin portion distant from the lower surface of the wafer W is exposed to the reactive ions sneaking in from the front surface side of the wafer W.

By the way, since the above-mentioned high frequency induction type plasma has a high density and a high plasma potential, it has a strong etching action. Therefore, when reactive ions in the plasma hit the electrostatic chuck sheet 14, the electrostatic chuck sheet 1
4 is damaged to cause particle contamination and promotes peeling of the glue margin portion, resulting in shortening the replacement cycle of the electrostatic chuck sheet 14.

The present invention has been made under such circumstances, and an object thereof is to provide a plasma processing apparatus capable of suppressing damage to an electrostatic chuck sheet.

[0011]

According to a first aspect of the invention, a processing gas is introduced into a chamber having an airtight structure to generate plasma,
In a plasma processing apparatus for processing an object to be processed on a mounting table by the plasma, an antenna composed of a planar coil provided facing the mounting table and a high frequency power supply section for applying high frequency power to this antenna And an electrostatic chuck layer provided on the mounting surface of the mounting table and made of a material selected from ceramics, quartz, and an insulating polymer, and a voltage is applied to the electrostatic chuck layer to apply electrostatic force to the object to be processed. And an electrostatic chuck electrode for adsorbing to the electrostatic chuck layer.

[0012]

When a high frequency power is applied to the high frequency antenna, an electromagnetic field is induced in the chamber, and the processing gas is turned into plasma by the electrons flowing in the electromagnetic field. Since the ions in this plasma have a large mean free path, they also collide with an electrostatic chuck layer that electrostatically adsorbs an object with a large impact force, but the material of the electrostatic chuck layer is ceramic, quartz, or insulating. The polymer is selected from the group consisting of organic polymers and has strong weather resistance against the impact force of ions and the degree of damage is extremely small, so that the generation of particles can be suppressed. Further, if a polymer film deposited on the mounting table by a chemical vapor reaction is used as the electrostatic chuck layer, the deposition force is large, and therefore there is no possibility of film peeling even if a large impact force is applied to this film.

[0013]

1 and 2 are a sectional view and a partially cutaway schematic perspective view showing the overall structure of a plasma processing apparatus such as an etching apparatus according to an embodiment of the present invention. 2 in the figure
The chamber is an airtight chamber made of, for example, aluminum except for a part of the upper surface, and a mounting table 3 made of, for example, aluminum is arranged at the center bottom of the chamber 2.

The mounting table 3 is the mounting portion 3 which is the upper part.
1 and a support portion 32, which is a lower portion supporting the mounting portion 31, are separably coupled by a bolt 33, and an insulator 34 is provided between the support portion 32 and the chamber 2.
Is installed.

The mounting portion 31 is a disk body integrally formed with a thick wafer mounting portion 31A and a thick flange portion or flange portion 31B as shown in FIGS. 3 and 4, and is a wafer mounting portion. The upper surface of 31A, that is, the peripheral portion 31C of the wafer mounting surface is formed as a curved surface having a large radius of curvature as shown in the figure. The electrostatic chuck sheet 4 is attached to the wafer mounting surface of the mounting portion 31 with an adhesive, and the semiconductor wafer W is mounted on the electrostatic chuck sheet 4. The diameter of the mounting surface of the mounting portion 31 and the electrostatic chuck sheet 4 is selected to be smaller than the diameter of the semiconductor wafer W. Electrostatic chuck sheet 4
Is an electrostatic chuck sheet 42A, 42 that forms two electrostatic chuck layers selected from an insulating material that is strong against the impact of reactive ions such as ceramics, quartz, and insulating polymers.
Conductive film 4 which is an electrode for electrostatic chuck such as copper foil between B
1 is enclosed, and its peripheral edge portion 4A is formed into a curved surface having a large radius of curvature so as to overlap the peripheral edge portion 31C of the wafer mounting surface.

The upper end of the mounting portion 31 is the mounting portion 3 concerned.
1. A plurality of holes 51 for backside gas (gas for heat conduction) opening on the upper surface of 1 are formed, and the lower ends of these holes 51 have gas for backside gas through, for example, the ventilation chamber 52. It communicates with the supply path 53. The gas supply passage 53 is connected to a gas supply source such as He gas (not shown) via a pressure regulator 54 such as a butterfly valve.

A pressure detector 55 for detecting the pressure of the backside gas is provided in the ventilation chamber 52. The pressure detector 55 and the pressure regulator 54 are provided in a controller 56 included in the control system of the device of the present invention. It is connected.

As shown in FIG. 3, the electrostatic chuck sheet 4 is also provided with a hole 45 at a position corresponding to the hole 51, and the backside gas from the hole 51 causes the backside gas to flow. It is adapted to be sprayed on the back surface of the wafer W through the hole 45. Also, electrostatic chuck sheet 4
The conductive film 41 is connected to the DC power source 43 via the conductive wire 46 covered by the insulated cable built in the mounting portion 31, the power feeding rod 47 passed through the through hole 32B of the supporting portion 32, and the switch 44. Connected. The mounting portion 31 and the support portion 32 are moved up and down by an elevating mechanism 48 so as to contact the wafer mounting surface when the wafer W is transferred.
9 are provided.

An annular focus ring 6 that surrounds the wafer W is disposed on the placing portion 31. The focus ring 6 is made of an insulating material that does not attract the reactive ions, and the reactive ions are placed inside the wafer W.
Have a role to effectively attract to.

A coolant reservoir 35 for circulating a cooling medium for cooling the wafer W via the mounting table 3 is formed inside the support portion 32, and an inlet pipe 36A and an exhaust pipe 36B are formed therein. The cooling medium, such as liquid nitrogen, which is provided and supplied into the refrigerant reservoir 35 through the introduction pipe 36A is discharged to the outside of the apparatus through the discharge pipe 36B.

The upper surface of the chamber 2 facing the mounting table 3 is made of an insulating material such as a quartz glass plate 21, and a high frequency antenna 7 composed of a planar coil such as a spiral coil is fixed to the upper surface of the quartz glass 21. There is. Both terminals (inner terminal and outer terminal) of this high-frequency antenna 7.
In between, for example, 13.56 MHz, 1 kW from a high frequency power source 71 for plasma generation via a matching circuit 72.
Is applied. As a result, a high frequency power source flows through the antenna 7, and plasma will be generated in the space inside the chamber 2 directly below the antenna 7, as will be described later.

Further, between the mounting table 3 and the ground, in order to apply a bias voltage having a frequency lower than the frequency of the high frequency voltage applied to the high frequency antenna 7 to the mounting table 3, for example, 400 KHz, the high frequency power supply section 22 is provided. Are connected. The chamber 2 is connected to the ground, so that an electric field is formed between the mounting table 3 and the chamber 2,
As a result, the perpendicularity of the reactive ions in the plasma in the chamber 2 to the wafer W is increased.

A gas supply pipe 23 is connected to the upper side surface of the chamber 2. The processing gas supplied from the gas supply pipe 23 into the chamber 2 varies depending on the type of processing. For example, in the case of etching processing, CHF ₃ or CF _{4 is used.}
Etching gas such as is supplied. Although only one gas supply pipe 23 is shown in the illustrated example, an appropriate number of gas supply pipes may be connected to the chamber 2 in order to allow the processing gas to flow uniformly.

On the bottom surface of the chamber 2, one ends of a plurality of exhaust pipes 81 are connected to the chamber 2 at equidistant positions in the circumferential direction. In the illustrated example, one ends of the two exhaust pipes 81 are symmetrically connected to the axis of the chamber 2. The other ends of the exhaust pipes 81 are connected to a common exhaust pipe 84 in which a pressure regulator 82 such as a butterfly valve and a vacuum pump 83 are provided, as shown in FIG. Further, in this embodiment, the exhaust system is gently exhausted at the initial stage of evacuation so as not to wind up particles, and after evacuation to some extent, for example, the pressure in the chamber 2 is several hundred mTorr.
After that, the exhaust controller 86 is configured to adjust the pressure adjuster 82 based on the pressure detection value from the pressure detection unit 85 provided in the chamber 2 so as to exhaust the gas rapidly.

Next, the operation of the above embodiment will be described.
First, an object to be processed, for example, a wafer W is loaded into the chamber 2 by a transfer arm (not shown), and placed on the electrostatic chuck sheet 4 by the pusher pin 49. Then, as described above, the vacuum pump 83 gently evacuates through the exhaust pipe 81 at the initial stage of evacuation, and rapidly after evacuation to a certain extent to quickly evacuate the chamber 2 to a predetermined vacuum atmosphere, and to cool the refrigerant, for example, the liquid. Nitrogen is introduced into the refrigerant reservoir 35 through the introduction pipe 36A and is discharged through the discharge pipe 36B to cool the mounting table 3. Subsequently, while supplying an etching gas such as CF ₄ gas into the chamber 2 through the gas supply pipe 23, the chamber 2 is vacuum evacuated to maintain the inside of the chamber 2 at a degree of vacuum of, for example, several mTorr to several tens of mTorr. A high frequency voltage is applied to the antenna 7 from the high frequency power supply unit 71.

When a high-frequency current flows through the high-frequency antenna 7 by applying this high-frequency voltage, an alternating magnetic field is generated around the antenna conductor, and most of the magnetic flux passes through the center of the antenna in the vertical direction to form a closed loop. Such an alternating magnetic field induces an approximately concentric circular alternating magnetic field immediately below the antenna 7, and electrons accelerated in the circumferential direction due to the alternating electric field collide with neutral particles of the processing gas to generate gas. Is ionized to generate plasma.

On the other hand, the conductive film 41 of the electrostatic chuck sheet 4
Then, when the switch 44 is turned on and a DC voltage is applied,
A conductive path is formed through the plasma and the chamber 2, polarization occurs in the insulating sheet 42A of the electrostatic chuck sheet 4, and a positive charge is generated on the contact surface side of the insulating sheet 42A with the wafer W. On the other hand, since the wafer W has a negative charge, an electrostatic force is generated between the wafer W and the insulating sheet 42A, and the electrostatic force attracts the wafer W to the electrostatic chuck sheet 4. Then, when the backside gas, for example, He gas is pressure-controlled from the gas supply passage 53 for the backside gas and is blown to the back surface side of the wafer W at a pressure of, for example, 10 Torr, the wafer W is, for example, 40 to 80 ° C.
To be cooled.

In this way, the wafer W is adsorbed and held on the mounting table 31 via the electrostatic chuck sheet 4, and in the state in which the wafer W is cooled, the reactive ions in the plasma are incident on the surface of the wafer W. Then, a chemical reaction occurs with the material to be processed, and the etching process is performed. Here, as described above, the plasma generated by the high frequency antenna 7 has a high density and is generated at a very low pressure, so that it can be removed by the reactive ions according to the fine pattern.

After the etching process is performed in this manner, the switch 44 is turned off to stop the application of the DC voltage to the conductive film 41 by the electrostatic chuck 4 and the supply of the backside gas. The backside gas supply may be stopped first. After that, the application of the high-frequency voltage is stopped, and the pusher pin 49 is lifted from the elevating mechanism 48 so that the pusher pin 49 is projected from the wafer mounting surface of the mounting portion 31, thereby pushing up the wafer W from the mounting table 3, and a transfer arm (not shown). Is carried out to the outside of the chamber 2. At this time, when plasma is generated after the application of the DC voltage to the electrostatic chuck sheet 4 is stopped, the static electricity is removed by the plasma and the electrostatic force on the surface of the electrostatic chuck sheet 4 is weakened. W mounting table 3
When the wafer W is pushed up from above, since an unreasonable force is not applied to the wafer W, it is possible to prevent the wafer W from being damaged or displaced. The pusher pin 49 is in a grounded state when it is raised and is in an electrically floating state when it is lowered.

Here, the reactive ions in the plasma wrap around from the front surface side of the wafer W and collide with the glue margin peripheral portion 4A of the electrostatic chuck sheet 4 of this embodiment. In this case, since the pressure in the chamber 2 is considerably low and the mean free path of the ions is large, the impact force due to the collision of the ions is considerably large, but the ceramic, quartz or insulating material used for the electrostatic chuck sheet 4 is large. Since the polymer is a material having a strong weather resistance against reactive ions, the electrostatic chuck sheet 4 is extremely less damaged, and it is possible to suppress the generation of particles due to the damage of the sheet and to prolong the service life. The replacement cycle of the electric chuck sheet 4 can be lengthened.

As the electrostatic chuck sheet, a polymer material may be attached to the upper surface of the mounting portion 31 by the CVD method. In this case, the conductive film may also be formed in the electrostatic chuck sheet by the CVD method. Since such an electrostatic chuck sheet has a considerably large adhesion force to the surface of the mounting portion 31, there is an advantage that there is no possibility of film peeling even if the impact force of ions is large.

In the above, in the plasma processing apparatus of the present invention, it is preferable to provide a load lock chamber between the chamber and the atmospheric atmosphere in order to improve the exhaust speed in the chamber 2. In addition, N ₂ purge gas in the load lock chamber,
If it is filled with dry air purge gas or CO ₂ purge gas and kept in a positive pressure state, moisture in the atmosphere does not enter the load lock chamber when the gate valve on the atmosphere side is opened, so that vacuum exhaust can be performed in a short time. . In this case, as shown in FIG. 5, the gate valves G1 and G2 are installed in the chamber 2.
Load lock chambers 9A and 9B for loading and unloading via
By providing, the processing efficiency can be improved.

Next, various experiments conducted for confirming the attributes of the plasma processing apparatus adopting the high frequency induction method will be described. The apparatus shown in the schematic view of FIG. 6 was used for the experiment. In the figure, 101 is a mounting table 1 for mounting the wafer W.
Reference numeral 03 denotes a chamber in which the gas introduction port 102 is formed on the side wall thereof, 104 denotes glass forming the upper surface of the chamber 101, and 105 denotes an antenna formed of a planar coil. Reference numerals 106 and 107 are high-frequency power sources connected to the antenna 105 and the mounting table 103, respectively. The chamber 101 has an upper diameter of 330
mm, the lower diameter is 360 mm, the thickness of the glass 104 is 3
It is formed to have a thickness of 2 mm, and the distance between the lower surface of the glass 104 and the upper surface of the wafer W is set to 76 mm.

First, assuming that a plasma having a density proportional to the intensity distribution of the induced electric field is generated in this apparatus, the diffusion equation of the following equation was applied to perform the numerical calculation of the diffusion state. Note that there is no internal flow velocity, and N (r, θ, z)
Is the plasma density, Q (r, θ, z) is the plasma production amount,
D (r, θ, z) is a diffusion coefficient.

DN / dt-DΔN = Q (r, θ, z) (1) This result is shown in FIG. 7. When the position in the Z direction from the upper surface of the chamber is z, the circles in the figure indicate. The state of diffusion when z = 5 cm, and Δ and □ indicate the state of diffusion when z = 6 and 7 cm, respectively. From this figure, it was confirmed that when z = 7 cm, plasma was diffused almost uniformly, and that plasma with good uniformity can be expected at an appropriate diffusion distance.

Next, a high frequency voltage of 13.56 MHz is applied to the antenna 106, and 400 K is applied to the mounting table 103.
A direct current voltage of Hz is applied, and Ar (argon) gas is supplied from one gas inlet 102 at 30 sccm to 400 sccm.
And the pressure dependence of the electron density and the electron temperature were measured. This measurement was performed by inserting the Langmuir plug 108 into the other gas inlet 92.

The results are shown in FIG. 8. In the figure, ◯ indicates the pressure dependence of the electron density, and Δ indicates the pressure dependence of the electron temperature. From this figure, it was confirmed that the electron density increases with increasing pressure and the electron temperature decreases in proportion to increasing pressure.

The power dependence of electron density and electron temperature was measured using the same method. The results are shown in FIG. 9. In the figure, ◯ shows the power dependence of the electron density, and Δ shows the power dependence of the electron temperature. From this figure, it was confirmed that the electron density increased in proportion to the increase in electric power, and the electron temperature decreased slightly in proportion to the increase in electric power, but remained almost constant.

Further, the radial distribution of the ion saturation current was measured by changing the pressure and the flow rate of Ar gas. This result is shown in Figure 1.
0 in the figure, ∘ indicates an Ar gas flow rate of 30 SCCM, pressure is 3.5 mTorr, Δ indicates an Ar gas flow rate of 100 SCCM,
Pressure 10.5mTorr, □ is Ar gas flow rate 180SC
The case of CM and the pressure of 18 mTorr are shown. The RF power was 1000W. Although the ion saturation current corresponds to the uniformity of CVD and etching, it was confirmed from this figure that the uniformity of the central region improved as the pressure decreased.

Next, the pressure dependence of the emission spectrum of Ar is analyzed by condensing the emitted light from the plasma generated at a position of 1 to 2 cm on the mounting table 103 through a window and a lens provided on the side wall of the chamber 101 to disperse the light. , Was measured for each emission wavelength.

FIG. 11 shows the result obtained by normalizing the maximum intensity for each emission wavelength. In the figure, ■ indicates emission of Ar radicals at wavelengths 810 and 811 nm, □ indicates emission of Ar radicals at wavelengths 727 to 751 nm, ◆ indicates emission of Ar radicals at wavelengths of 394 to 430 nm, and ◇ indicates 46 of Ar ions.
Light emission at 0 and 465 nm are shown, respectively.

From these results, it was confirmed that the light emission from the Ar radical is much stronger than the light emission from the Ar ion. The emission intensity of Ar radicals is 10 mTorr pressure.
It was confirmed that there was a peak at r and the intensity thereof decreased at a low pressure thereafter, whereas the emission intensity of Ar ions increased at a reduced pressure, and it was confirmed that it had a peak at a pressure of around 1 mTorr. From these results, since Ar radicals having a long wavelength are generated when the pressure becomes higher, it is presumed that the electron temperature will decrease, that is, the electron temperature increases as the pressure lowers. The validity of this assumption was confirmed from FIG. 7.

Next, CHF ₃ gas was supplied into the chamber 101, and the pressure dependence of the emission intensity was measured for each emission type. The results are shown in FIG. 12, in which ◇ is C (carbon) and × is H.
(Hydrogen), □ is F (fluorine), ○ is CF, △ is C
F ₂ is shown respectively. CF and CF ₂ are reaction products.

From this figure, it was confirmed that the emission intensity of CF ₂ radicals monotonically decreased as the pressure was lowered, while the emission intensity of CF had a peak near 11 mTorr. It was also confirmed that the emission intensity of C, H, and F radicals increased significantly as the pressure was lowered.

[0045]

According to the present invention, in a plasma processing apparatus in which plasma is generated by a high frequency antenna and which has a strong ion impact force, an electrostatic chuck sheet is made of ceramic, quartz, and an insulating material having high weather resistance against ions in plasma. Since the material is selected from polymers, damage to the electrostatic chuck sheet can be suppressed.

[Brief description of drawings]

FIG. 1 is a sectional view showing the overall configuration of an embodiment of the present invention.

FIG. 2 is a schematic perspective view showing the outline of the overall configuration of the embodiment of the present invention.

FIG. 3 is an exploded perspective view showing a part of a mounting table.

FIG. 4 is an enlarged sectional view showing a mounting table.

FIG. 5 is a sectional view showing the overall configuration of another embodiment of the present invention.

FIG. 6 is a schematic view showing an experimental device.

FIG. 7 is a characteristic diagram showing a state of plasma diffusion obtained by calculation.

FIG. 8 is a characteristic diagram showing pressure dependence of electron density and electron temperature.

FIG. 9 is a characteristic diagram showing power dependence of electron density and electron temperature.

FIG. 10 is a characteristic diagram showing a radial distribution of ion saturation current.

FIG. 11 is a characteristic diagram showing pressure dependence of an emission spectrum of Ar.

FIG. 12 is a characteristic diagram showing pressure dependence of emission intensity.

FIG. 13 is a sectional view showing a conventional plasma processing apparatus.

[Explanation of symbols]

 2 chamber 21 quartz glass plate 3 mounting table 4 electrostatic chuck sheet 41 insulating sheet 49 pusher pin 53 gas supply path for backside gas 7 high frequency antenna 81 exhaust pipe

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁶ Identification number Office reference number FI technical display location H05H 1/46 B 9014-2G

Claims (1)

[Claims] 1. A plasma processing apparatus for introducing a processing gas into an airtight chamber to turn it into plasma, and processing the object to be processed on the mounting table by the plasma, in a planar shape facing the mounting table. An antenna consisting of a coil, a high-frequency power source for applying high-frequency power to this antenna, and an electrostatic chuck provided on the mounting surface of the mounting table and made of a material selected from ceramics, quartz, and insulating polymers. A plasma processing apparatus comprising: a layer; and an electrode for an electrostatic chuck for applying a voltage to the electrostatic chuck layer to attract an object to be processed to the electrostatic chuck layer by an electrostatic force. .