JP3459237B2 - Semiconductor lead bending tool - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor lead bending tool for bending leads protruding from a semiconductor package into a predetermined shape.

[0002]

2. Description of the Related Art For example, in a semiconductor package such as a QFP (quad flat package) or a DIP (dual inline package), a lead is horizontally projected on a side surface thereof, and this lead is attached to an L-shape to mount it on a circuit board. It must be bent into an S shape or an S shape and inserted into a circuit board or soldered to be bent into a predetermined shape that can be attached. Therefore, a semiconductor lead bending tool as shown in FIG. 10 is used for such lead bending.

In FIG. 10, reference numerals 1 and 2 denote a die and a punch as a semiconductor lead bending tool attached to a processing machine (not shown) and provided so as to face each other and can be relatively separated from and contacted with each other. In the portion of the die 1 facing the punch 2 side, the lead L of the semiconductor package P is
Is provided with a protruding wall-shaped die-side processing portion 3, and a punch-side punching portion having a protruding wall shape is also provided at a position corresponding to the die-side processing portion 3 in a portion of the punch 2 facing the die 1 side. A processing section 4 is provided, and by sandwiching and bending the lead L between the die side processing section 3 and the punch side processing section 4, the lead L is formed into a predetermined L-shaped or S-shaped shape. Bend. It should be noted that the die-side processed portion 3 and the punch-side processed portion 4 are respectively formed at their tip end portions in contact with the lead L with concave and convex curved portions 5 and 6 which are abutted at a distance from each other. It is bent into an L-shape or an S-shape according to the shape of the gap defined between the concave-convex curved portions 5 and 6.

By the way, the semiconductor lead bending tools for these dies 1 and punches 2 have been conventionally made of a hard cemented carbide from the viewpoint of wear resistance. In particular, the concave-convex curved portions 5 and 6 that come into contact with the leads L at the tips of the 4 and 4 are worn quickly, so that the tools must be frequently replaced, and this replacement work and the tool position adjustment work after replacement are often performed. Will spend time. Further, the solder plating of the lead L has a high affinity with the binder phase of the cemented carbide, so that the processed parts 3, 4
If the solder plating attached in this way reattaches to the lead L of the semiconductor that is bent after that, a short circuit occurs between the adjacent leads L, resulting in a product defect, and a lot of time is spent in the inspection process. Required, and the product yield also deteriorates. Therefore, for example, JP-A-8-1250
No. 84, etc., a diamond coating (DLC coating) is applied to the surface of the die side processed portion 3 to improve wear resistance of the die side processed portion 3 and reduce friction with the lead L to prevent adhesion of solder plating. It is proposed that.

[0005]

However, even if the processed portion 3 is diamond-coated as described above, the frictional resistance with the lead L during bending is large if the coating is simply applied, and this leads to the lead L. Heat is generated between the processed part 3 and the processed part 3 to locally raise the temperature, and no matter how the diamond coating is applied, the solder plating of the lead L may be welded and adhered to the processed part 3. . On the other hand, since the diamond coating film is hard and the size of the diamond crystal grains is not always uniform, the entire surface of the diamond coating film is polished, for example, in a mirror-like shape in order to prevent heat generation due to friction as described above. Therefore, it takes a lot of time and labor to smooth the surface, and as a result, the bending tool becomes extremely expensive.

The present invention has been made in view of the above circumstances, and in the above-described semiconductor lead bending tool, the wear resistance of the processed portion can be improved as well as time and time. An object of the present invention is to provide a bending tool capable of preventing the solder plating of leads from being attached to a processed portion due to heat generation without requiring labor.

[0007]

In order to solve the above-mentioned problems and to achieve such an object, the present invention is based on the first aspect.
, The die that is movable relative disjunction facing the punch, the semiconductor package is bent into a predetermined shape by sandwiching between said punch side processing unit that lead is placed uneven A die-side processed portion having a curved portion is provided, and at least the uneven curved portion is formed in the die-side processed portion.
A portion including a diamond coating film, the surface of the diamond coating film, a flat portion is formed on the surface in any cross section of the uneven curved portion of the die side processed portion, and a unit along the cross section The total length of the flat parts per length is 10 of the unit length.
Characterized by being ground to a range of up to 90%,
Secondly, the leads of the semiconductor package mounted on the die-side processed portion are sandwiched between the die and the die-side processed portion by a punch that can face and separate from the die.
The concave and convex curved parts that are bent into a predetermined shape are formed by
The punch-side processing unit provided with, in this punch-side processing unit
At least a portion including the uneven curved portion is coated with a diamond coating film, and the surface of the diamond coating film is formed with a flat portion on the surface in an arbitrary cross section of the uneven curved portion of the punch side processed portion, and The grinding is performed so that the total length of the flat portions per unit length along the cross section is in the range of 10 to 90% of the unit length.

Therefore, in a punch or die having a diamond coating film whose surface is ground as described above in a processing portion, that is, a semiconductor lead bending tool,
Since the surface of this coating has a flat portion in which the length along an arbitrary cross section of the processed portion is 10 to 90% of the unit length, a lead during bending is applied to the coating as it is. It is possible to reduce the friction with and thereby suppress the heat generation. On the other hand, the grinding for forming such a flat portion is performed up to the bottom of the concave portion defined between the adjacent flat portions, for example, as in the case of polishing the entire coating surface to be mirror-like and smooth. It is not necessary to perform it, and even if the concave portion is left, the total length of the flat portion may be within the above range, so that the time and labor required for grinding can be significantly reduced. However, if the sum of the lengths of the flat portions is smaller than 10% with respect to the unit length, the frictional resistance cannot be sufficiently reduced, while conversely it is 90%.
In order to secure a length exceeding 10 mm, it is necessary to increase the amount of grinding on the surface of the coating film, and in any case, the above-mentioned effects may be impaired. It should be noted that, in order to more reliably achieve such effects, the total length of the flat portions per unit length along the cross section should be in the range of 30 to 60% of the unit length. It is desirable to grind the surface of the diamond coating film.

[0009]

1 to 4 show a first embodiment of the present invention.
2 shows a die 11 as an embodiment of the present invention and a punch 12 as a second embodiment of the present invention. The die 11 is attached to the lower side of a processing machine (not shown) and the punch 12 is attached to the upper side thereof. The die 11 and the punch 12 are opposed to each other and can be relatively contacted and separated in the vertical direction by the processing machine. A plurality of (four in the present embodiment) positioning jigs 13 are arranged around the die 11 and the punch 12 that are vertically separated from each other. Here, the die 11 of these first and second embodiments is used.
As for the punch 12, as shown in FIG. 1, the leads L are protruded from a pair of side surfaces facing opposite sides of a semiconductor package P packaged in a rectangular flat plate shape.
It is for bending the lead L of P, and both are flat plate-shaped mounting portions 14 and 15 to be mounted on the processing machine side.
In addition, a processing portion 1 having a "concave" cross section and extending like a protruding wall
6 and 17 are integrally provided.

Of these, at the tip of the processing portion 16 on the die 11 side of the first embodiment, the processing portion 16 on the die side is formed.
The interval between the inner wall surfaces 18A, 18A of the pair of projecting wall portions 18, 18 having a "concave" cross section is set to be slightly larger than the width of the semiconductor package P.
The semiconductor package P is provided between these inner wall surfaces 18A, 18A.
In this state, the leads L on both sides of the semiconductor package P can be placed on the tip surfaces 18B, 18B facing the upper sides of the projecting wall portions 18, 18, respectively. Also, the ridge line portion intersecting with the above-mentioned tip surface 18B of the projecting wall portion 18 and the outer wall surface 18C of each projecting wall portion 18 facing the opposite side between the projecting wall portions 18, 18 has a 1/4 arc shape in cross section. Eggplant convex curved part 18
It is designated as D.

On the other hand, also in the processing portion 17 on the side of the punch 12 of the second embodiment, the inner wall surfaces 19A of the pair of projecting wall portions 19 having a "concave" cross section, which face each other,
The interval between 19A is set larger than the width of the semiconductor package P, and in particular, the inner wall surface 18 of the die-side processed portion 16 is set.
The distance between the outer wall surfaces 19B and 19B, which are slightly larger than the distance between A and 18A, and which face the opposite sides of the two projecting wall portions 19 and 19 is also the outer wall surfaces 18C and 18C of the die side processing portion 16. It is larger than the distance between them. Further, at a ridge line portion where the tip surface 19C facing the lower side of each protruding wall portion 19 and the inner wall surface 19A intersect with each other, a cross-section having a curvature radius larger than that of the convex curved surface 18D by about the thickness of the lead L. A 4-curved concave curved portion 19D is formed.

In the processing parts 16 and 17 of the die 11 and the punch 12, at least the convex curved part 18D is formed.
And the portions including the concave curved portion 19D are coated with diamond coating films 20 and 21, respectively, and the surfaces of these diamond coating films 20 and 21 are the processed portions 16 covered with the diamond coating films 20 and 21. , 17, especially in any cross section of the convex curved portion 18D and the concave curved portion 19D, a flat portion F ... Is formed on the surface as shown in FIG. 4, and these are per unit length E along the cross section. The total sum F ₁ + F ₂ + ... + F _N of the flat portions F ..., F ₁ , F ₂ , ..., F _N is 10 to 90%, more preferably 30 to 60% of the unit length E.
It is ground so that. In FIG. 4, the broken line indicates the surface of the diamond coating film 20, 21 before grinding, and the film thickness t is about 3 to 30 μm in the present embodiment, and this is ground with the grinding allowance G. By doing so, the flat surface F ... Is formed as described above, and the film thickness T after grinding is set to about 2 to 20 μm. The body parts of the die 11 and the punch 12 other than the diamond coating films 20 and 21 are made of cemented carbide or steel in this embodiment.

Here, in order to coat the processing portions 16 and 17 with the diamond coating films 20 and 21 as described above, for example, microwave plasma CVD method or hot filament CVD method is used, and hydrogen, methane and C are used as source gases.
Coating may be performed using a mixed gas such as O at a processing temperature of about 800 to 900 ° C. while controlling each coating condition. Further, the convex curved portion 18D and the concave curved portion 19 of the processed portions 16 and 17 are
When it is rather difficult to form the diamond coating films 20 and 21 only on D, the processed portions 16 and 1
The diamond coating films 20 and 21 are formed on the entire tip portion of 7 or the entire processed portions 16 and 17, of which the convex curved portion 18D and the concave curved portion 19 to be processed are provided.
Only D should be ground, or the processing part 1
You may make it grind | polish the whole tip part of 6 and 17, or the process parts 16 and 17 whole. Furthermore, this grinding
For example, it is performed by using a profile grinder, a tool grinder, or a grinder used for cutting jewels, and the lengths F ₁ , F ₂ , ... F _N and its sum F ₁ + F ₂ + ... + F _N ,
Alternatively, the ratio to the unit length E is, for example, SEM.
It can be measured by (scanning electron microscope).

The four positioning jigs 13 ...
A pin-shaped member having a substantially rectangular columnar shape having a flat end portion in an L-shape, and before the die L and the punch 12 are relatively brought into contact with each other as shown in FIG. With the semiconductor package P placed on the die-side processed portion 16, the tip end of each of the semiconductor packages P is perpendicular to the side face on one horizontal plane passing through the side face above the leads L of the semiconductor package P. They are arranged so as to face each other and extend in a cross shape in a plan view. Further, the respective positioning jigs 13 ... Can be retracted toward and away from the semiconductor package P side, that is, the die side processing section 16 by a retracting device (not shown). The die-side processing portion 16 is prevented from interfering with the relative separation and contact between the punch 12 and the punch 12.
In the state of projecting to the side, the tip ends of the semiconductor package P are in contact with the side surfaces of the semiconductor package P so that the semiconductor package P is sandwiched in a straight line from opposite sides of each pair. The position of the semiconductor package P on the side processed portion 16 is positioned at a predetermined position along the one horizontal plane.

In the semiconductor lead bending tool thus constructed, that is, the die 11 and the punch 12,
First, as shown in FIG. 2, the leads L are placed on the tip surfaces 18B, 18B of the projecting wall portions 18, 18 of the processed portion 16 of the die 11, and the semiconductor package P is placed on the processed portion 16, The position of the semiconductor package P is positioned by contacting the tip of the positioning jig 13 ... Projected by the retracting device with the side surface of the semiconductor package P. Next, the respective positioning jigs 13 are retracted and then the die 11 and the punch 12 are brought relatively close to each other, so that the die side processing portion 16 and the punch side processing portion 17 are separated from each other as shown in FIG. Then, the lead L is sandwiched and bent, and processed into an L-shape extending downward. That is, more specifically, the portion of the lead L located on the convex curved portion 18D is sandwiched between the convex curved portion 18D and the concave curved portion 19D of the punch 12 to form a quarter arc shape. As described above, the lead L is bent downward by 90 °, so that the lead L is processed into an L-shape with its tip end facing downward.

According to the die 11 and the punch 12 having the above construction, however, the processing portions 16 and 17 for bending and processing the lead L in this manner are coated with the diamond coating films 20 and 21. It is possible to significantly improve the wear resistance of the processed portions 16 and 17 as compared with the case where the bending processing is performed by the processed portion of the cemented carbide or the steel material which is left as it is without being coated with the diamond coating film. it can. Then, the surfaces of these diamond coating films 20 and 21 are the above-mentioned processed portion 1
6 and 17, especially the convex curved portion 18D and the concave curved portion 19D so that the flat portion F is formed in an arbitrary cross section,
Also, the sum F ₁ + F ₂ of the lengths F ₁ , F ₂ , ..., F _N of the flat portions F ... Per unit length E along the cross section.
Since + ... + F _N is ground so as to be 10% to 90% of the unit length E, the convex curved portions 18D during the bending process can be formed without spending a great deal of time and labor such as mirror polishing. Also, the friction between the concave curved portion 19 and the lead L can be reduced.

That is, since the diamond crystal grains grown in the diamond coating films 20 and 21 are not necessarily uniform in size when the diamond coating films 20 and 21 are formed by the above-described method, FIG. As shown by the broken line, the unevenness of the surface is large, so that a large frictional resistance is generated between the lead L and the heat generation to locally raise the temperature, and it can be said how the diamond coating films 20 and 21 are formed. The solder plating of the lead L is welded and adhered to the processed portions 16 and 17. On the other hand, in order to prevent such heat generation due to frictional resistance, for example, if ideal mirror polishing is performed so as to prevent unevenness on the surfaces of the diamond coating films 20 and 21, the surfaces will be as described above. Since the unevenness is large, it is necessary to perform polishing with a large polishing allowance H as shown in FIG. 4, and it takes much time and labor to perform such polishing on the hard diamond coating films 20 and 21. The result is required.

On the contrary, the die 1 having the above structure
1 and punch 12, that is, a semiconductor lead bending tool, the diamond coating films 20, 2
Grinding so as to form the above-mentioned flat portions F on the surface of No. 1 reduces frictional resistance with the lead L to suppress heat generation and prevents adhesion of solder plating due to welding. Sum of lengths F ₁ , F ₂ , ..., F _N F ₁ + F ₂ +
… + F _N makes the ratio per unit length E 10 to 90%
By doing so, it is possible to reduce the time and labor required for grinding without requiring the large polishing allowance H as described above. Therefore, according to the above configuration, the semiconductor lead does not cause adhesion of solder plating due to welding or the like at a relatively low manufacturing cost, and therefore does not cause a short circuit of the semiconductor lead due to the adhered solder plating. It is possible to provide a bending tool. Furthermore, in order to more reliably bring out such effects, the diamond coating film 2
In the surface of Nos. 0 and 21, the sum F ₁ + F ₂ + ... + F _N of the lengths F ₁ , F ₂ , ..., F _N of the flat portions F ... per unit length E along the cross section is the unit length. 30-60% of E
It is desirable to be ground so that

Next, FIGS. 5 to 7 show a die 24 as a third embodiment of the present invention and a punch 25 as a fourth embodiment of the present invention. The embodiment shown in FIGS. The same parts as those of the embodiment are designated by the same reference numerals and the description thereof will be omitted. That is, the die 24 and the punch 25 as the semiconductor lead bending tools of the third and fourth embodiments are for the QFP in which the leads L project from the four side surfaces of the rectangular flat plate-shaped semiconductor package P. .., 19 ... are respectively provided in a square shape in plan view, and are formed as a die side processing section 26 and a punch side processing section 27. ing.

In such a QFP semiconductor package P, the tip of the lead L is positioned and placed on the terminal of the circuit board, and then the tip of the lead L and the terminal are soldered. Often connected by
For this reason, the lead L is processed into an approximately S-shape by bending it downward in an L-shape and then outwardly bending the lower end into an L-shape, as in the case of the DIP. . Accordingly, in accordance with this, in the present embodiment, the tip end surface 18B of the projecting wall portion 18 of the die side processing portion 26 is set so that the portion 18c of the outer wall portion 18C retracts one step with respect to the portion 18a on the inner wall portion 18A side thereof. The inner wall surface 18A side portion 18a and the wall surface portion 18c extending from this portion 18a toward the outer wall surface 18C side portion 18b side.
A convex curved portion 18D is formed at the ridge line portion intersecting with and a concave curved portion 18F is formed at the intersecting ridge line portion between the wall surface portion 18c and the outer wall surface 18C side portion 18b.

On the other hand, the projecting wall portion 1 of the punch side processing portion 27.
On the other hand, the inner wall surface 1 of the tip surface 19C of
The portion 19a on the 9A side is formed so as to recede one step further than the portion 19b on the outer wall surface 19B side.
The wall surface portion 19c between 19b and the inner wall surface 19A side portion 19
A concave curved portion 19D is formed at the ridge line portion intersecting with a, and a convex curved portion 19F is formed at the ridge line portion intersecting the wall surface portion 19c and the outer wall surface 19B side portion 19b. Therefore, in this embodiment, these portions 18a to 18c, 1
9a to 19c and the concavo-convex curved portions 18F, 19D, 18
The tip surfaces 18B and 19C of the projecting wall portions 18 and 19 on which D and 19F are formed are coated with diamond coating films 28 and 29, respectively, and the surfaces of these diamond coating films 28 and 29 are shown in FIG. As shown, the diamond coating 28,
Flat portions F ... Are formed in arbitrary cross sections of the processed portions 26, 27 covered with 29, and lengths F ₁ , of these flat portions F ... Per unit length E along the above cross section.
The total sum F ₁ + F ₂ + ... + F _{N of} F ₂ , ..., F _N is ground so as to be 10 to 90%, more preferably 30 to 60% of the unit length E.

Therefore, the third and the fourth configured as described above
Also in the semiconductor lead bending tool of the embodiment, that is, in the die 24 and the punch 25, the processing portions 26 and 27 thereof are
Since the surfaces are coated with the diamond coating films 28 and 29 whose surfaces are ground as described above, the first and second
It is possible to provide a bending tool which can improve wear resistance similarly to the embodiment of the present invention and can reliably prevent adhesion of solder plating due to welding at a low manufacturing cost. Further, in the third and fourth embodiments, the convex curved portions 18D and 19F and the concave curved portions 18F and 19D are formed on both the die side processed portion 26 and the punch side processed portion 27, respectively. , The projecting wall portion 18, 1
The diamond coating films 28 and 29 are coated on the entire tip surfaces 18B and 19C of 9 and have sufficient resistance to stress and heat generation that tend to concentrate on these uneven curved portions 18F, 19D, 18D and 19F. It becomes possible to secure wear resistance and welding resistance.

When the lead L is bent into an S shape in two steps and processed as in the third and fourth embodiments, for example, the die 11 of the first and second embodiments described above is used. Punch 12
The lead L may be bent into an L-shape by means of, and the tip thereof may be bent further outward by the die 24 and punch 25 of the third and fourth embodiments. When the die 11 and the punch 12 according to the second embodiment are used for processing, it is desirable that the lead L is not completely bent to 90 ° but is left slightly open. Further, although not shown in the third and fourth embodiments of FIGS. 5 to 7 and the semiconductor lead processing tools of the fifth and sixth embodiments of FIGS. 8 and 9 described below, these Also in this case, it is desirable to provide the positioning jig as described above together.

Next, FIGS. 8 and 9 show a die 31 and a punch 32 according to the fifth and sixth embodiments of the present invention, and these are particularly the semiconductor package P having a side of several mm. This is for bending the lead L, which is small, into a substantially S-shape. Here, the die 31 of the fifth embodiment
Is a rectangular parallelepiped block-shaped projection 3 whose die-side processing portion 33 is
4, a ridge 34A having a flat top with a width substantially equal to the width of the semiconductor package P is formed at the center of the tip of the ridge 34, and both side portions of the ridge 34A face outward. According to the inclined surface 34B that gradually inclines backward,
34B. On the other hand, the punch 3 of the sixth embodiment
Similarly to the die 31, the punch side working portion 35 of the second punch also has a rectangular block-shaped projection 36, and a tip end thereof has a U-shaped cross section having a groove width larger than the width of the projection 34A. The groove 36A is formed, and the portions on both sides of the groove 36A are inclined surfaces 3 that gently project outward toward the tip side.
6B and 36B. Furthermore, these inclined surfaces 3
6B and 36B are formed with convex curved portions 36C and 36C at their ridges intersecting with the concave groove 36A on the inner side.

In the present embodiment, the protrusion 3 is formed on the die side processing portion 33 over the entire tip of the protrusion 34.
4A and the inclined surfaces 34B, 34B are coated with the diamond coating film 37, while in the punch side processing section 35, the concave groove 36A is formed on the tip side of the protrusion 36.
Of the diamond coating film 38 on the entire tip surfaces of the pair of projecting wall portions including the inclined surfaces 36B, 36B on both outer sides of the
And the surfaces of the diamond coatings 37, 38 are covered with the diamond coatings 37, 38 in the same manner as shown in FIG. In which flat portions F ... Are formed and a unit length E along the cross section
The lengths F ₁ , F ₂ of these flat portions F ...
, F _N is ground so that the total F ₁ + F ₂ + ... + F _N is 10 to 90%, more preferably 30 to 60% of the unit length E.

In the fifth and sixth embodiments configured as described above, the semiconductor package P is placed on the protrusion 34A of the die side processing portion 33 of the die 31, and the punch 32 is opposed to this. The lead L
As shown in FIG. 9, first, after being pressed against the convex curved portions 36C, 36C of the punch side working portion 35 and bent downward, the tip end thereof becomes the inclined surfaces 36B, 36B of the punch side working portion 35. The inclined surface 34 of the die side processing portion 33
It is sandwiched between B and 34B and bent outward,
It is processed into a roughly S shape. Also in these fifth and sixth embodiments, the diamond coating films 37 and 38 ground as described above are formed on the surfaces of the die side processing portion 33 of the die 31 and the punch side processing portion 35 of the punch 32. Being coated, the first, second and third, fourth
It is possible to obtain the same effect as that of the above embodiment. Further, particularly in the die 31 of the fifth embodiment, since the semiconductor package P is placed and positioned on the protrusion 34A, the semiconductor package P is extremely small as described above. Even if there is, it can be held stably, and it becomes possible to promote highly accurate bending work.

[0027]

As described above, according to the present invention,
The surface of the die-side processing part and punch-side processing part of the semiconductor lead bending tool is coated with a diamond coating film, which is ground and the total length of the flat part in any cross section is calculated per unit length. By setting the content to 10 to 90%, it is possible to reduce the friction resistance with the semiconductor lead and reduce the solder plating due to heat generation while reducing the manufacturing cost by reducing the time and labor when grinding the hard diamond coating film. It is possible to prevent welding, and therefore it becomes possible to bend a high-quality semiconductor without causing a short circuit and the like with a high yield.

[Brief description of drawings]

FIG. 1 is a diagram showing first and second embodiments of the present invention.

2 is a cross-sectional view before bending according to the embodiment shown in FIG.

FIG. 3 is a cross-sectional view during bending according to the embodiment shown in FIG.

FIG. 4 is a schematic enlarged cross-sectional view of the diamond coating films 20 and 21 of the embodiment shown in FIG.

FIG. 5 is a diagram showing third and fourth embodiments of the present invention.

6 is a sectional view before bending according to the embodiment shown in FIG.

FIG. 7 is a cross-sectional view during bending according to the embodiment shown in FIG.

FIG. 8 is a diagram showing fifth and sixth embodiments of the present invention.

9 is a cross-sectional view at the time of bending according to the embodiment shown in FIG.

FIG. 10 is a view showing a conventional semiconductor lead processing tool.

[Explanation of symbols]

11, 24, 31 Die (semiconductor lead bending processing tool) 12, 25, 32 Punch (semiconductor lead bending processing tool) 13 Positioning jig 16, 26, 33 Die side processing part 17, 27, 35 Punch side processing Part 18D, 19F, 36C Convex curved part 18F, 19D Concave curved part 20, 21, 28, 29, 37, 38 Diamond coating film P Semiconductor package L Lead F Flat part F ₁ , F ₂ , ..., F _N Any cross section Length E of flat portion F at unit length in arbitrary cross section

─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Seiji Kameoka Nishioike, Kanegasaki Nishioike, Uozumi-cho, Akashi-shi, Hyogo Prefecture 1 MMC Kobelco Tool Co., Ltd. (72) Masatoshi Nishikawa Kanegasaki Nishioike, Uozumi-cho, Akashi-shi, Hyogo Address 179 1 MC Kobelco Tool Co., Ltd. (72) Inventor Hiroshi Hayasaki Kanaezaki Nishioike, Uozumi Town, Akashi City, Hyogo Prefecture 179 Address 1 MC Kobelco Tool Co., Ltd. (72) Inventor Tominaga Tetsumitsu Uozumi, Akashi City, Hyogo Prefecture Machi Kanegasaki Nishioike 179-1 MMC Kobelco Tool Co., Ltd. (56) Reference JP-A-11-340398 (JP, A) JP-A-10-41451 (JP, A) JP-A-6-262275 (JP , A) JP-A-8-125084 (JP, A) JP-A-10-326854 (JP, A) Actual development Sho-59-135650 (JP, ) (58) investigated the field (Int.Cl. ^7, DB name) H01L 23/50 B21D 5/01

Claims (3)

(57) [Claims] 1. A semiconductor package is mounted on a die which can be relatively separated from and contacted with a punch, and the lead is sandwiched between the die and the processed portion on the punch side. die-side processing unit which uneven curved portion is formed is provided with a bending to the constant shape, at least in the die-side processing unit
A portion including the uneven curved portion is coated with a diamond coating film, and a surface of the diamond coating film forms a flat portion on the surface in an arbitrary cross section of the uneven curved portion of the die side processed portion. And the semiconductor lead bending is performed so that the total length of the flat portions per unit length along the cross section is in the range of 10 to 90% of the unit length. Processing tool. 2. A lead of a semiconductor package mounted on a processing portion on the die side is sandwiched between the punch and the processing portion on the die side so as to be sandwiched between the punch and the processing portion on the die side.
The concave and convex curved parts that are bent into a predetermined shape are formed by
A punch side processing unit is provided, and this punch side processing unit is
There are the portion including at least the uneven curved portion be coated diamond coating film, the surface of the diamond coating film, on the punch-side processing unit
The flat portion is formed on the surface in any cross section of the concave-convex curved portion, and the total length of the flat portion per unit length along the cross section is 10 to 9 of the unit length.
A semiconductor lead bending tool characterized by being ground to a range of 0%. 3. The total length of the flat portions per unit length along the cross section is 30 to 60 of the unit length.
The surface of the diamond coating film is ground so as to be in the range of%.
Alternatively, the semiconductor lead bending tool according to claim 2.