JP2001358273A - Tool for processing semiconductor lead - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a tool for processing a semiconductor lead which can provide a stable and precise processing over a long period of time, wherein recessed or projecting curved parts 18D, 19D can be formed precisely, as well as increasing an abrasion resistance of processing sections 16, 17. SOLUTION: A die 11 which can be relatively drawn near to or separated from a punch 12 in the facing direction is provided with a die-side processing section 16 whereon a semiconductor package P is placed to process a lead L of the package into a predetermined shape between the die-side processing section 16 and a punch-side processing section 17. The punch 12 which can be relatively drawn near to or separated from the die 11 in the facing direction is provided with the punch-side processing section 17 whereon the semiconductor package P is placed to process the lead L of the package into a specified shape between the punch-side processing section 17 and die-side processing section 16. These processing sections 16, 17 are provided with sintered materials 20, 21 having a superhigh hardness, chief of which is diamond or CBN.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor lead processing tool for processing leads projecting from a semiconductor package into a predetermined shape.

[0002]

2. Description of the Related Art For example, a semiconductor package such as a QFP (quad flat package) or a DIP (dual in-line package) has a horizontal protruding lead on a side surface thereof. It must be bent into a shape or an S-shape, inserted into a circuit board or soldered, and processed into a predetermined shape that can be attached. Therefore, a lead processing tool as shown in FIG. 9 is used for such lead processing.

In FIG. 9, reference numerals 1 and 2 denote:
A die and a punch as the semiconductor lead processing tool attached to a processing machine (not shown) and opposed to each other so as to be relatively separated from each other; A protruding wall-shaped die-side processing portion 3 on which the lead L of P is placed is provided, and the die-side processing portion 3 is provided on a portion of the punch 2 facing the die 1 side.
Punch side processing part 4 which also forms a protruding wall at a position corresponding to
The lead L is sandwiched and bent between the die-side processing portion 3 and the punch-side processing portion 4 to process the lead L into a predetermined L-shaped or S-shaped shape. In addition, concave and convex curved portions 5 and 6 are formed at front ends of the die-side processed portion 3 and the punch-side processed portion 4 which are in contact with the leads L at intervals, respectively. It is processed into an L-shape or an S-shape according to the shape of the gap defined between these concave and convex curved portions 5 and 6.

[0004] By the way, these semiconductor lead machining tools for the die 1 and the punch 2 are conventionally formed from a hard cemented carbide from the viewpoint of abrasion resistance. (4) The uneven portions 5, 6 at the tip, especially the lead L, wear quickly, so that the tool must be changed frequently, and many operations are required for this changing operation and the adjusting operation of the tool position after the changing. While spending time, the solder plating of the lead L
As a result, it takes time to polish and remove it. Therefore, recently, a hard coating such as a diamond coating, a DLC coating, or a TiN coating is coated on the tips of the die-side processing portion 3 and the punch-side processing portion 4 to further improve the wear resistance, and the unevenness curve is formed. The parts 5 and 6 are polished so that the surface roughness is Ry 0.1 μm or less, and the lead L
A proposal has been made to reduce the friction with the lead L to thereby prevent the adhesion of the solder plating by reducing the friction with the lead L.

[0005]

However, among the above-mentioned processing parts 3 and 4 in which a diamond coating is applied, it is inevitable that the cost is high because the diamond coating itself is expensive.
It is difficult to form a film having a uniform thickness especially on the concave curved portion 5 among the concave and convex curved portions 5 and 6, and since the film is extremely hard after coating, it is required to perform a finishing process. It is also difficult to mold it into a shape. On the other hand, those coated with DLC or TiN are cheaper and have better workability than diamond coating, but have a lower abrasion resistance than diamond coating. There is. In addition, it is difficult to form a uniform film with these coated tools, and there is a problem that the film is partially peeled off, making stable processing impossible. This is particularly noticeable in the concave and convex curved portions 5 and 6 where stresses are concentrated due to contact with the leads due to a decrease in the diameter.

The present invention has been made under such a background. In the above-described tool for processing semiconductor leads, it is not only possible to improve the wear resistance of the processed portion, but also to form a concave and convex curved portion. It is an object of the present invention to provide a tool which can form a surface with high precision and can perform stable and high-precision machining for a long period of time.

[0007]

SUMMARY OF THE INVENTION In order to solve the above-mentioned problems and to achieve such an object, the present invention firstly provides a die which can be relatively moved toward and away from a punch. A die-side processing part for mounting a semiconductor package and processing a lead of the semiconductor package into a predetermined shape between the lead-side processing part and the punch-side processing part; Secondly, a high-hardness sintered body is provided, and secondly, a semiconductor package mounted on a processed portion on the die side is provided on a punch which can be relatively separated from and separated from the die. A punch-side processing part for processing the lead into a predetermined shape between the lead-side processing part and the die-side processing part is provided, and an ultra-high-hardness sintered body mainly composed of diamond or CBN is provided in the punch-side processing part. It is characterized by.

That is, according to the present invention, the ultra-hard sintered body obtained by sintering ultra-hard particles of diamond or CBN at a high temperature and a high pressure via a binder is disposed in the processing part of the die or the punch. Higher abrasion resistance than coating and TiN coating can be obtained, but workability is better than diamond coating which directly coated diamond. It is possible to do. Furthermore, the ultra-high hardness sintered body thus formed by sintering is
It is stable over a long period of time without peeling, etc. Can be used for processing. In addition, since stress concentrates on the concave bending contact portion in the processed portion as described above, the ultra-high hardness sintered body is at least one of the processed portions in which the ultra-high hardness sintered body is disposed. It is desirable that this processed portion is disposed in a portion that is curved in an uneven manner.

Furthermore, the present invention is, in the third aspect, abutting a tip of a positioning jig which can be protruded and retracted toward a processing part on the die side to a semiconductor package mounted on the processing part on the die side. A contact portion for positioning a position of the semiconductor package on the processed portion is provided, and an ultra-high-hardness sintered body mainly composed of diamond or CBN is provided in the contact portion. However, in a semiconductor lead processing tool provided with a die or a punch as described above, a semiconductor package is placed on a processing portion on the die side, and a positioning jig is caused to protrude and retract toward the processing portion on the die side. By contacting the contact part at the tip with the semiconductor package on the processing part,
The position of the processed portion of the semiconductor package on the processed portion is positioned at a predetermined position, and if the abutting portion of such a positioning jig also wears, the semiconductor package cannot be accurately positioned. However, in the third invention, such a problem can be solved by arranging the ultra-high hardness sintered body in such a contact portion. Becomes

[0010]

1 to 3 show a first embodiment of the present invention.
A die 11 as an embodiment, a punch 12 as a second embodiment, and a plurality (four in the present embodiment) of positioning jigs 13 as a third embodiment.
The die 11 is attached to the lower side of a processing machine (not shown) and the punch 12 is attached to the upper side,
The die 11 and the punch 12 are opposed to each other and can be relatively separated in the vertical direction by the processing machine, and the positioning jigs 13 are arranged around the die 11 and the punch 12 separated in the vertical direction. Are located in
Here, as shown in FIG. 1, the die 11 and the punch 12 of the first and second embodiments have leads L from a pair of side faces facing each other of a semiconductor package P packaged in a rectangular flat plate shape. It is for processing the lead L of the protruded DIP, and each of the flat-shaped mounting portions 14 and 15 mounted on the processing machine side has a “recessed” cross section.
Processing portions 16 and 17 extending in the shape of a protruding wall in the shape of a letter are provided integrally.

Of these, at the tip of the processing portion 16 on the die 11 side of the first embodiment, the die-side processing portion 16
The interval between the opposing inner wall surfaces 18A, 18A of the pair of projecting wall portions 18, 18 having a “recessed” cross section is set to be slightly larger than the width of the semiconductor package P,
A semiconductor package P is provided between these inner wall surfaces 18A, 18A.
Are positioned, the leads L on both sides of the semiconductor package P can be placed on the tip surfaces 18B, 18B facing the upper side of the protruding wall portions 18, 18, respectively. The crossing ridge line between the front end face 18B of the protruding wall portion 18 and the outer wall surface 18C of each protruding wall portion 18 facing each other on both protruding wall portions 18 has a 1/4 arc shape in cross section. Convex curved part 18
D.

On the other hand, also in the processing portion 17 on the side of the punch 12 in the second embodiment, opposed inner wall surfaces 19A, 19A of a pair of projecting wall portions 19, 19 having a "recessed" cross section.
The interval between the semiconductor package P is set to be larger than the width of the semiconductor package P.
The distance between the outer wall surfaces 19B, 19B, which are slightly larger than the distance between A, 18A, and which are opposite to each other between the two projecting wall portions 19, 19, are also the outer wall surfaces 18C, 18C of the die-side processing portion 16. It is larger than the distance between them. Further, a cross-section 1 / having a radius of curvature larger by the thickness of the lead L than the convex curved surface 18D is formed at the intersection ridge line between the tip surface 19C facing the lower side of each projecting wall portion 19 and the inner wall surface 19A. A four-arc concave portion 19D is formed.

In the working portions 16 and 17 of the die 11 and the punch 12, portions including the above-mentioned convexly curved portion 18 D and concavely curved portion 19 D are respectively provided with ultra-high hardness sintered bodies mainly composed of diamond or CBN. 20, 21 are provided. In addition, these ultra-high hardness sintered bodies 20, 21
In the present embodiment, the other parts of the die 11 and the punch 12 are formed of a cemented carbide or a steel material.

In the first and second embodiments, the front end surfaces 18B and 19C of the projecting wall portions 18 and 19 of the die-side processing portion 16 and the punch-side processing portion 17 and the inner wall surface 18 are provided.
A and 19A are provided with concave portions 18E and 19E, which open to the front end side and inward, respectively, at the intersection ridge line portion with the convex curved portion 1A.
8D and a concave portion 19D are formed so as to be cut out in an L-shaped cross section, and the concave portion 18E of the die 11 is formed.
The super-hardness sintered body 20 having a substantially fan-shaped cross section having a convex curved portion 18D formed thereon, and the ultra-high-hardness sintered body having a substantially L-shaped cross section having a concave curved portion 19D formed in a concave portion 19E of the punch 12 is provided. The body 21 is formed by connecting the side surfaces connected to the end surfaces 18B, 19C and the inner wall surfaces 18A, 19A on the protruding wall portions 18, 19 side to the end surfaces 18B, 19C and the inner wall surfaces 18A, 19A, respectively.
It is arranged by brazing with an active brazing material or the like so as to be flush with 19A.
Furthermore, the surface roughness of the convex portions 18D and the concave portions 19D of the ultra-high hardness sintered bodies 20 and 21 and the side surfaces are set to be Ry 3.2 μm or less.

On the other hand, the four positioning jigs 13 are:
A substantially square pillar-shaped pin-shaped member having a flat L-shaped base end, and the die 11 and the punch 12 are relatively separated from each other as shown in FIG. In a state where the semiconductor package P is mounted on the die-side processed portion 16, the front ends of the semiconductor package P are perpendicular to the side surface on one horizontal plane passing through the side surface above the lead L of the semiconductor package P. They are arranged so as to face each other and extend crosswise in a plan view. Further, each positioning jig 13 is capable of protruding and retracting toward the semiconductor package P side, that is, the die-side processing portion 16 by a retracting device (not shown). And the punch 12 is prevented from interfering with each other.
In the state protruding to the side, the front end portions thereof come into contact with the respective side surface portions of the semiconductor package P so as to sandwich the semiconductor package P linearly from opposite sides one by one. The position of the semiconductor package P on the side processing portion 16 is positioned at a predetermined position along the one horizontal plane.

Therefore, in each of the positioning jigs 13 of the third embodiment, the tip ends thereof are the contact portions 22 to the semiconductor package P, and in the present embodiment, the contact portions 22 are provided. Of diamonds and C
An ultra-high-hardness sintered body 23 mainly composed of BN is joined and attached by brazing with an active brazing material or the like. In the third embodiment, the positioning jig 13 is formed in the shape of a quadrangular prism as described above, and the abutting portion made of the ultra-hard sintered body 23 abutting on the side surface of the semiconductor package P The tip end surface of the machining portion 16 is also formed in the shape of a square flat surface, like the die 11 and the punch 12 of the first and second embodiments.
The ultrahigh-hardness sintered bodies 20, 21 are not provided on the 8D or the concavely curved portion 19D.

In the semiconductor lead machining tool having such a structure, that is, the die 11, the punch 12, and the positioning jigs 13,...
End surface 18 of protruding wall portions 18, 18 in machined portion 16
After the lead L is placed on the B and 18B and the semiconductor package P is placed on the processing portion 16, the positioning jig 13 which is protruded from the side surface of the semiconductor package P by the projecting device,. The position of the semiconductor package P is determined by the abutment of the abutment portions 22. Next, the die 11 and the punch 12 are relatively approached after each positioning jig 13 is retracted,
As shown in FIG. 3, the lead L is sandwiched and bent between the die-side processing portion 16 and the punch-side processing portion 17, and is processed into an L-shape extending downward. That is, in more detail, a portion of the lead L located on the convex curved portion 18D is interposed between the convex curved portion 18D and the concave curved portion 19D of the punch 12 to form a quarter-arc shape. Thus, the lead L is processed into an L-shape with its tip facing downward.

According to the die 11 and the punch 12 having the above-described structure, the processing portions 16 and 17 where the lead L is bent and processed in this manner are subjected to an ultra-high hardness firing mainly composed of diamond or CBN. The binders 20 and 21 are provided, so that the DLC coating or Ti coating is applied to these processed parts as compared with the case where the entire die or punch is formed of a cemented carbide including these processed parts.
Abrasion resistance can be significantly improved as compared with the case where the N coating is applied. On the other hand, for a tool in which the above-mentioned processing portion is coated with diamond, the cost can be suppressed and the workability is good. The concave portion 19D of the side processing portion 17 can be formed with high accuracy, and therefore, the effect that the lead L can be processed with high accuracy can be obtained.

And, above all, this ultra-high hardness sintered body 2
Nos. 0 and 21 are obtained by sintering diamond or CBN via a binder as described above, and are compared with those obtained by coating a surface such as a diamond coating, a DLC coating, or a TiN coating on the surface of a processed portion. It is possible to sinter and supply a homogeneous composition stably without variation, and there is no partial peeling or falling off as in the case of the above-mentioned film.
Accordingly, the above-described high machining accuracy can be stably maintained for a longer period of time in combination with the above-described effect of improving the wear resistance. According to the punch 11 and the punch 12, the tool life can be greatly extended, and the frequency of tool change can be reduced to reduce the total time required for the change work and the adjustment work. Processing of the lead L can be performed.

In addition, in the first and second embodiments, the super-height portions are formed on the convex portions 18D and the concave portions 19D of the processing portions 16, 17 where stress is concentrated particularly when the lead L is bent. Since the hardness sintered bodies 20 and 21 are provided,
Despite such stress concentration, maintenance of high machining accuracy and extension of tool life can be more reliably promoted. Further, when the super-hardened sintered bodies 20 and 21 are disposed on the convex curved portion 18D and the concave curved portion 19D in this embodiment, the concave portions 18 are formed at the tips of the protruding wall portions 18 and 19 of the processed portions 16 and 17 in the present embodiment.
E, 19E are formed so as to be cut out in an L-shaped cross section, and the super-hard sintered bodies 20, 21 are brazed and joined to these recesses 18E, 19E. The size of the high-hardness sintered bodies 20 and 21 can be minimized to further reduce the cost, while the brazing area with the working portions 16 and 17 can be sufficiently secured to achieve the ultra-high hardness. It is possible to reliably prevent the sintered bodies 20 and 21 from falling off.

In this embodiment, as described above, the processing portion 16 of the die 11 and the punch 12 made of cemented carbide or steel is used.
The ultra-high hardness sintered bodies 20, 21 are directly joined to the recesses 18E, 19E formed at the tip 17 by brazing with an active brazing material or the like. The sintered body and the cemented carbide are integrally sintered and formed to form a layered sintered body, and the above-mentioned protruding portion 18D and concave portion 19D are formed in the ultra-high hardness sintered portion of the layered sintered body. Die 11 and punch 12 made of cemented carbide or steel
And may be arranged on the processing portions 16 and 17 by brazing or the like to the tip of the protruding wall portion of the main body. In some cases, these semiconductors are formed by integrally sintering the main body of the die 11 or the punch 12 made of cemented carbide and the ultra-high-hardness sintered bodies 20 and 21 of the processing portions 16 and 17 thereof. It is also possible to manufacture a tool for lead processing.

On the other hand, in the semiconductor lead machining tool,
The die 11 and the punch 1 according to the first and second embodiments
2 and a positioning jig 13 as a third embodiment.
As described above, these positioning jigs 13 protrude and retract, and the contact portion 22 at the tip thereof contacts the side surface portion of the semiconductor package P placed on the processed portion 16 of the die 11. Thus, the position of the semiconductor package P in the processing portion 16 is determined, whereby the lead L can be bent exactly at a predetermined position. In the present embodiment, since the contact portion 22 of the thirteen is also formed of the ultra-high hardness sintered body 23 mainly composed of diamond or CBN, it is not possible to directly bend the lead L. Although the contact portion 22 is not
Abrasion due to contact with the semiconductor package P can be prevented, and therefore, the semiconductor package P can be accurately positioned at a predetermined position on the die-side processing portion 16 for a long period of time, and the leads L The processing accuracy can be maintained with high accuracy.

FIGS. 4 to 6 show a die 24 as a fourth embodiment of the present invention and a punch 25 as a fifth embodiment of the present invention. The same reference numerals are assigned to portions common to the embodiments, and description thereof will be omitted. That is, the die 24 and the punch 22 as the semiconductor lead processing tools of the fourth and fifth embodiments are used.
Are for a QFP in which leads L project from four side surfaces of a semiconductor package P having a rectangular plate shape, and four projecting wall portions 18, 19... Are formed in a square shape in plan view, and are a die-side processing portion 26 and a punch-side processing portion 27.

Here, in such a QFP semiconductor package P, the tip of the lead L is positioned and mounted on the terminal of the circuit board, and then the tip of the lead L and the terminal are soldered. Are often connected by
Therefore, the lead L is once bent downward in an L-shape as in the case of the above-described DIP, and then the lower end thereof is bent outward in an L-shape. . Accordingly, in this embodiment, the tip surface 18B of the protruding wall portion 18 of the die-side processing portion 26 is configured such that the portion 18c of the outer wall portion 18C is retracted by one step with respect to the portion 18a on the inner wall portion 18A side. A portion 18a on the inner wall surface 18A side and a wall portion 18c from the portion 18a toward the portion 18b side on the outer wall surface 18C side
A convex curved portion 18D is formed at the intersection ridge line portion of the outer wall surface 18C, and a concave curved portion 18F is formed at the intersection ridge line portion between the wall surface portion 18c and the portion 18b on the outer wall surface 18C side.

On the other hand, the projecting wall portion 1 of the punch side machining portion 27
On the other hand, the inner wall surface 1
The portion 19a on the 9A side is formed to retreat one step from the portion 19b on the outer wall surface 19B, and these portions 19a,
The wall portion 19c between 19b and the portion 19 on the inner wall surface 19A side
A concave curved portion 19D is formed at the intersection ridge line with a, and a convex curved portion 19F is formed at the intersection ridge line between the wall surface portion 19c and the portion 19b on the outer wall surface 19B side. Thus, in the present embodiment, these portions 18a to 18c, 1
9a to 19c and the concave / convex curved portions 18F, 19D, 18
The entire distal end portions of the protruding wall portions 18 and 19 on which D and 19F are formed are formed by brazing ultra-high-hardness sintered bodies 28 and 29 mainly containing diamond or CBN, respectively.

Therefore, the fourth and fifth components thus constructed are
Lead machining tool of the embodiment, ie, die 2
4. Also in the punch 25, since the ultra-high-hardness sintered bodies 28 and 29 containing diamond or CBN as a main component are disposed in the processing portions 26 and 27, the same as in the first and second embodiments. In order to improve the abrasion resistance, high machining accuracy is stably maintained over a long period of time, and an efficient and economical lead L
Can be processed. In the fourth and fifth embodiments, the die-side processing unit 26 and the punch-side processing unit 2
7, the convex curved portions 18D and 19F and the concave curved portions 18F and 1F
9D are formed, respectively, while the entire distal end portions of the projecting wall portions 18 and 19 are formed of ultra-hard sintered bodies 28 and 29.
These uneven curved portions 18F, 1
Sufficient wear resistance can be ensured even for stress concentrated on 9D, 18D, and 19F.

In the fourth and fifth embodiments as well, similarly to the first and second embodiments, recesses are formed at the tips of the projecting wall portions 18 and 19 by cutting out L-shaped sections. The concave and convex curved portions 18F, 19D, 18D, 19F are formed in these concave portions.
The super-hard sintered bodies 28 and 29 having an L-shaped cross-section and formed thereon may be joined or disposed. When the lead L is bent in two steps in an S-shape, the die 1 of the first and second embodiments may be used.
1. After the lead L is bent into an L shape by the punch 12, the tip may be further bent outward by the die 24 and the punch 25 of the fourth and fifth embodiments. 1. When processing with the eleventh and punch 12 of the second embodiment, the lead L is completely 90 °
It is desirable to keep it slightly open outward without bending it. Further, the fourth and fifth embodiments of FIGS. 4 to 6 and the sixth and fifth embodiments of FIGS.
Although not shown in the semiconductor lead machining tool of the seventh embodiment, it is desirable that these also include the positioning jig as described above, in which case, the positioning jig of the third embodiment is used. It is desirable that an ultra-high-hardness sintered body 23 be provided at a contact portion 22 that contacts the semiconductor package P like the jig 13.

FIGS. 7 and 8 show a die 31 and a punch 32 according to sixth and seventh embodiments of the present invention. This is for bending a small lead L into a substantially S-shape. Here, the die 31 of the sixth embodiment is used.
The die-side processing portion 33 has a rectangular parallelepiped block-shaped projection 3.
In the center of the tip of the protrusion 34, a protrusion 34A having a flat top with a width substantially equal to the width of the semiconductor package P is formed, and both side portions of the protrusion 34A face outward. Inclined surface 34B that gradually recedes in accordance with
34B.

On the other hand, the punch-side processing portion 35 of the punch 32 according to the seventh embodiment also has a rectangular parallelepiped block-like projection 36 similar to the die 31, and the tip thereof has the projection 34A.
A groove 36A having a U-shaped cross section having a groove width larger than the width of the groove 36A is formed, and both sides of the groove 36A are inclined surfaces 36B, 3 gently projecting outward toward the distal end.
6B. Furthermore, these inclined surfaces 36B, 3
The intersection ridge line portion with the concave groove 36A inside 6B is a convex curved portion 36.
C and 36C. In the present embodiment, the entire front end of the protrusion 34 in the die-side processed portion 33 is formed of the ultra-high hardness sintered body 37 including the protrusions 34 and the inclined surfaces 34B, 34B. In the punch-side processing portion 35, the concave groove 36
The tips of a pair of projecting wall portions including the inclined surfaces 36B, 36B on both outer sides of A are made of ultra-high hardness sintered bodies 38, 38.

In the sixth and seventh embodiments configured as described above, the semiconductor package P is placed on the ridge 34A of the die-side processed portion 33 of the die 31, and the punch 32 is opposed thereto. , The lead L
As shown in FIG. 8, firstly, after being pressed downward by the convex portions 36C, 36C of the punch-side processing portion 35 and bent downward, the tip ends thereof are in contact with the inclined surfaces 36B, 36B of the punch-side processing portion 35. The inclined surface 34 of the die-side processing portion 33
B, 34B and are bent outward,
It is processed into an approximate S shape. Also in these sixth and seventh embodiments, the ultra-high-hardness sintered body 37, the die-side processed portion 33 of the die 31 and the punch-side processed portion 35 of the punch 32 are provided.
Since the 38 is provided, the same effects as those of the first, second, fourth, and fifth embodiments can be obtained.
In the die 31 of the sixth embodiment, the semiconductor package P is placed on the ridge portion 34A and positioned, so that the semiconductor package P is extremely small as described above. Even if there is, it can be stably held, and it is possible to promote processing with higher precision.

[0031]

As described above, according to the present invention,
By disposing an ultra-high-hardness sintered body containing diamond or CBN as a main component in the processing part on the die side, the processing part on the punch side, or the contact part at the tip, the resistance of these processed parts and contact parts is improved. While improving the abrasion, the processed part can be formed with high accuracy and the precision can be prevented from deteriorating due to delamination, so that high processing accuracy can be stably maintained over a long period of time. As a result, efficient and economical processing of semiconductor leads can be promoted.

[Brief description of the drawings]

FIG. 1 is a diagram showing first to third embodiments of the present invention.

FIG. 2 is a sectional view before processing according to the embodiment shown in FIG. 1;

FIG. 3 is a sectional view at the time of processing according to the embodiment shown in FIG. 1;

FIG. 4 is a diagram showing fourth and fifth embodiments of the present invention.

FIG. 5 is a sectional view before processing according to the embodiment shown in FIG. 4;

FIG. 6 is a sectional view at the time of processing according to the embodiment shown in FIG. 4;

FIG. 7 is a diagram showing sixth and seventh embodiments of the present invention.

FIG. 8 is a cross-sectional view at the time of processing according to the embodiment shown in FIG. 7;

FIG. 9 is a view showing a conventional tool for processing semiconductor leads.

[Explanation of symbols]

11, 24, 31 Die (semiconductor lead processing tool) 12, 25, 32 Punch (semiconductor lead processing tool) 13 Positioning jig (semiconductor lead processing tool) 16, 26, 33 Die side processing section 17, 27, 35 Punch side processing portion 18D, 19F, 36C Convex curved portion 18F, 19D Concave curved portion 18E, 19E Concave portion 20, 21, 23, 28, 29, 37, 38 Ultra-hard sintered body 22 Contact portion P Semiconductor package L Lead

 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Ken Takahashi 1528 Nakashinda, Yokoi, Kobe-cho, Anpachi-gun, Gifu Prefecture F-term in Mitsubishi Materials Corporation Gifu Works (reference) 4E070 AB15 BC13 5F067 DA11

Claims (4)

[Claims] 1. A die side on which a semiconductor package is mounted on a die which is relatively detachable and opposed to a punch, and a lead of the semiconductor package is processed into a predetermined shape between the die and a processing portion on the punch side. A tool for processing semiconductor leads, wherein a processing part is provided, and an ultra-hard sintered body containing diamond or CBN as a main component is disposed in the die-side processing part. 2. A semiconductor device comprising a semiconductor package mounted on a processing part on the die side and a punch having a predetermined shape formed between the punch and the processing part on the die side. 1. A tool for processing semiconductor leads, characterized in that a punch-side processing portion for processing is provided, and an ultra-high-hardness sintered body containing diamond or CBN as a main component is disposed in the punch-side processing portion. 3. The ultra-high-hardness sintered body is characterized in that at least the processed part of the processed part on which the ultra-high-hardness sintered body is disposed is provided at a portion where the processed part is unevenly curved. The semiconductor lead machining tool according to claim 1 or 2, wherein 4. A semiconductor package mounted on the processing part on the die is brought into contact with a tip of a positioning jig which can be protruded and retracted toward the processing part on the die side and the semiconductor package on the processing part. A contact portion for positioning the position of
A semiconductor lead machining tool characterized in that an ultra-high-hardness sintered body containing diamond or CBN as a main component is disposed in the contact portion.