JP3451979B2 - Semiconductor device - Google Patents

Semiconductor device

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Publication number
JP3451979B2
JP3451979B2 JP12128299A JP12128299A JP3451979B2 JP 3451979 B2 JP3451979 B2 JP 3451979B2 JP 12128299 A JP12128299 A JP 12128299A JP 12128299 A JP12128299 A JP 12128299A JP 3451979 B2 JP3451979 B2 JP 3451979B2
Authority
JP
Japan
Prior art keywords
heat sink
thermal conductivity
semiconductor element
semiconductor device
thermal expansion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP12128299A
Other languages
Japanese (ja)
Other versions
JP2000311971A (en
Inventor
隆一 齋藤
保夫 近藤
義彦 小池
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
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Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP12128299A priority Critical patent/JP3451979B2/en
Publication of JP2000311971A publication Critical patent/JP2000311971A/en
Application granted granted Critical
Publication of JP3451979B2 publication Critical patent/JP3451979B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H01L23/3675—Cooling facilitated by shape of device characterised by the shape of the housing
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【発明の属する技術分野】本発明は、低熱膨張性と高熱
伝導性を有する半導体装置用ヒートシンクとそれを用い
た半導体装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a heat sink for a semiconductor device having low thermal expansion and high thermal conductivity, and a semiconductor device using the heat sink.

【０００２】[0002]

【従来の技術】電子デバイスによる電力やエネルギーの
変換，制御に関連した技術、特にオン，オフモードで用
いられる電力用電子デバイスとその応用技術としての電
力変換システムがパワーエレクトロニクスである。2. Description of the Related Art Power electronics is a technology related to the conversion and control of electric power and energy by an electronic device, particularly a power electronic device used in an on / off mode and a power conversion system as its application technology.

【０００３】電力変換のため、各種のオン，オフ機能を
持つ電力用半導体素子が用いられている。この半導体素
子としては、ｐｎ接合体を内蔵し、一方向のみの導電性
をもつ整流ダイオードをはじめ、種々のｐｎ接合の組合
せ構造により、サイリスタ，バイポーラトランジスタ，
ＭＯＳＦＥＴ等が実用化され、更には絶縁ゲート型バイ
ポーラトランジスタ（ＩＧＢＴ）やゲート信号によりタ
ーンオフ機能を併せもつゲートターンオフサイリスタ
（ＧＴＯ）も開発されている。For power conversion, power semiconductor elements having various on / off functions are used. As this semiconductor element, a thyristor, a bipolar transistor, a rectifier diode having a built-in pn junction and having conductivity in only one direction, a thyristor, a bipolar transistor,
MOSFET and the like have been put to practical use, and further, an insulated gate bipolar transistor (IGBT) and a gate turn-off thyristor (GTO) having a turn-off function by a gate signal have also been developed.

【０００４】これらの電力用半導体素子は、通電により
発熱し、その高容量化，高速化に伴い発熱量も増大する
傾向にある。発熱に起因する半導体素子の特性劣化，短
寿命化を防止するためには、放熱部を設け、半導体素子
及びその近傍での温度上昇を抑制する必要がある。銅
は、熱伝導率が３９３Ｗ／ｍ・Ｋと大きく、かつ低価格
であるため、放熱部材として一般に用いられている。し
かし、電力用半導体素子を備える半導体装置の放熱部材
は、熱膨張率が４.２×１０-6／℃ のＳｉと接合される
ため、熱膨張率がこれに近い放熱部材が望まれる。銅は
熱膨張率が１７×１０-6／℃と大きいため、半導体素子
との半田接合性は好ましくなく、ＭｏやＷといった熱膨
張率がＳｉと近い材料を放熱部材として用いたり、半導
体素子と放熱部材の間に設けたりしている。These power semiconductor elements generate heat when energized, and the amount of heat generation tends to increase as their capacity and speed increase. In order to prevent the deterioration of the characteristics of the semiconductor element and the shortening of the life due to heat generation, it is necessary to provide a heat radiating portion to suppress the temperature rise in the semiconductor element and its vicinity. Copper has a large thermal conductivity of 393 W / m · K and is low in price, and is generally used as a heat dissipation member. However, since a heat dissipation member of a semiconductor device including a power semiconductor element is bonded to Si having a coefficient of thermal expansion of 4.2 × 10 −6 / ° C., a heat dissipation member having a coefficient of thermal expansion close to this is desired. Since copper has a large coefficient of thermal expansion of 17 × 10 −6 / ° C., its solderability to a semiconductor element is not preferable, and a material having a coefficient of thermal expansion similar to Si such as Mo or W is used as a heat dissipation member, It is also provided between the heat dissipation members.

【０００５】一方、電子回路を一つの半導体チップ上に
集積させた集積回路（ＩＣ）は、その機能に応じたメモ
リー，ロジック，マイクロプロセッサ等に分類される。
ここでは電力用半導体素子に対し、電子用半導体素子と
呼ぶ。これらの半導体素子は、年々集積度や演算速度が
増加し、それに伴い発熱量も増大している。ところで、
一般に電子用半導体素子は、外気から遮断して故障や劣
化を防止する目的で、パッケージ内に収納されている。
この多くは、半導体素子がセラミックスにダイボンディ
ングされ、密封されているセラミックスパッケージ及び
樹脂で封止されているプラスチックパッケージである。
また、高信頼性，高速化に対応するために、複数個の半
導体装置を一つの基板上に搭載したマルチチップモジュ
ール（ＭＣＭ）も製造されている。On the other hand, integrated circuits (ICs) in which electronic circuits are integrated on one semiconductor chip are classified into memories, logics, microprocessors and the like according to their functions.
Here, the power semiconductor element is referred to as an electronic semiconductor element. The integration degree and the operation speed of these semiconductor elements are increasing year by year, and accordingly, the amount of heat generation is also increasing. by the way,
Generally, an electronic semiconductor device is housed in a package for the purpose of shutting off from outside air and preventing failure or deterioration.
Most of these are a ceramic package in which a semiconductor element is die-bonded to a ceramic and sealed, and a plastic package in which a resin is sealed.
In addition, a multi-chip module (MCM) in which a plurality of semiconductor devices are mounted on one substrate is manufactured in order to cope with high reliability and high speed.

【０００６】プラスチックパッケージは、リードフレー
ムと半導体素子の端子がボンディングワイヤにより接続
され、これを樹脂で封止する構造になっている。近年
は、半導体素子の発熱量の増大に伴い、リードフレーム
に熱放散性を持たせたパッケージや熱放散のための放熱
板を搭載するパッケージも出現している。熱放散のため
には、熱伝導率の大きい銅系のリードフレームや放熱板
が多用されているが、Ｓｉとの熱膨張差による不具合が
懸念されている。The plastic package has a structure in which the lead frame and the terminal of the semiconductor element are connected by a bonding wire and this is sealed with resin. 2. Description of the Related Art In recent years, as the amount of heat generated by a semiconductor element increases, a package in which a lead frame has heat dissipation properties and a package in which a heat dissipation plate for heat dissipation are mounted have also appeared. For heat dissipation, a copper-based lead frame and a heat dissipation plate, which have high thermal conductivity, are often used, but there is a concern about a problem due to a difference in thermal expansion from Si.

【０００７】一方、セラミックスパッケージは、配線が
プリントされたセラミック基板上に半導体素子が搭載さ
れ、金属やセラミックスのキャップで密封する構造を持
つ。さらに、セラミック基板にはＣｕ−ＭｏやＣｕ−Ｗ
の複合材料あるいはコバール合金などが接合され、放熱
板として用いられているが、それぞれの材料において低
熱膨張化あるいは高熱伝導化とともに加工性の向上，低
コストが要求されている。On the other hand, the ceramic package has a structure in which a semiconductor element is mounted on a ceramic substrate on which wiring is printed and sealed with a metal or ceramic cap. Furthermore, Cu-Mo and Cu-W are used for the ceramic substrate.
These composite materials or Kovar alloy are joined and used as a heat dissipation plate, but each material is required to have low thermal expansion or high thermal conductivity as well as improved workability and low cost.

【０００８】ＭＣＭはＳｉ，金属、あるいはセラミック
スの基板上に形成された薄膜配線に複数個の半導体素子
をベアチップで搭載し、これをセラミックスパッケージ
に入れ、リッドで封止する構造を持つ。放熱性が要求さ
れる場合には、パッケージに放熱板や放熱フィンを設置
する。金属製の基板材料として、銅やアルミニウムが使
用されており、これらは熱伝導度が高いという長所を持
つが、熱膨張係数が大きく半導体素子との整合性が悪
い。このため、高信頼性ＭＣＭの基板にはＳｉや窒化ア
ルミニウム（ＡｌＮ）が用いられている。また、放熱板
はセラミックスパッケージと接合されるため、熱膨張率
の点でパッケージ材料と整合性が良く、熱伝導率が大き
な材料が望まれている。The MCM has a structure in which a plurality of semiconductor elements are mounted as bare chips on a thin film wiring formed on a substrate of Si, metal, or ceramics, which are placed in a ceramics package and sealed with a lid. When heat dissipation is required, a heatsink or heatsink is installed on the package. Copper and aluminum are used as the metal substrate material, and they have the advantage of high thermal conductivity, but have a large coefficient of thermal expansion and poor compatibility with semiconductor devices. Therefore, Si or aluminum nitride (AlN) is used for the substrate of the highly reliable MCM. Further, since the heat dissipation plate is bonded to the ceramics package, a material having good compatibility with the package material in terms of thermal expansion coefficient and high thermal conductivity is desired.

【０００９】[0009]

【発明が解決しようとする課題】以上のように、半導体
素子を搭載した半導体装置は、いずれもその動作におい
て熱を発生し、蓄熱されると半導体素子の機能を損ねる
恐れがある。このため、発生する熱を外部に放散するた
めの熱伝導性に優れた放熱板が必要となる。放熱板は、
直接あるいは絶縁層を介して半導体素子と接合されるた
め、熱伝導性だけでなく、熱膨張の点でも半導体素子と
の整合性が要求される。As described above, in any semiconductor device equipped with a semiconductor element, heat is generated during its operation, and if the heat is accumulated, the function of the semiconductor element may be impaired. For this reason, a heat dissipation plate having excellent thermal conductivity is required to dissipate the generated heat to the outside. The heat sink is
Since it is bonded to the semiconductor element directly or through an insulating layer, not only thermal conductivity but also thermal expansion is required to be compatible with the semiconductor element.

【００１０】現在用いられている半導体素子は、主にＳ
ｉ及びＧａＡｓである。これらの熱膨張係数は、それぞ
れ２.６×１０-6〜３.６×１０-6／℃，５.７×１０-6
〜６.９×１０-6／℃である。これらに近い熱膨張係数
をもつ放熱板材料には、従来よりＡｌＮ，ＳｉＣ，Ｍ
ｏ，Ｗ，Ｃｕ−Ｗ等が知られているが、これらは単一材
料であるため、熱伝達係数と熱伝導率を任意にコントロ
ールすることは困難であるとともに、加工性に乏しくコ
ストが高いという問題がある。特開平8−７８５７８号
公報にはＣｕ−Ｍｏ焼結合金，特開平９−181220 号公
報にはＣｕ−Ｗ−Ｎｉ焼結合金，特開平9−209058 号公
報にはＣｕ−ＳｉＣ焼結合金，特開平9−15773号公報に
はＡｌ−ＳｉＣが提案されている。これらの従来公知の
複合材は、両成分の比率を変えることによって熱伝達係
数及び熱伝導率を広範囲にコントロールできるが、塑性
加工性が低く、薄板の製造が困難であり、更に製造工程
が多くなるものである。Currently used semiconductor elements are mainly S
i and GaAs. These thermal expansion coefficients, respectively 2.6 × 10 -6 ~3.6 × 10 -6 /℃,5.7×10 -6
˜6.9 × 10 −6 / ° C. Heat sink materials with a thermal expansion coefficient close to those of AlN, SiC, M
O, W, Cu-W, etc. are known, but since these are single materials, it is difficult to arbitrarily control the heat transfer coefficient and the thermal conductivity, and the workability is poor and the cost is high. There is a problem. JP-A-8-78578 discloses a Cu-Mo sintered alloy, JP-A-9-181220 discloses a Cu-W-Ni sintered alloy, JP-A-9-209058 discloses a Cu-SiC sintered alloy, JP-A-9-15773 proposes Al-SiC. These conventionally known composite materials can control the heat transfer coefficient and the thermal conductivity in a wide range by changing the ratio of both components, but the plastic workability is low, it is difficult to manufacture a thin plate, and more manufacturing steps are required. It will be.

【００１１】本発明の目的は、低熱膨張・高熱伝導性
で、かつ塑性加工性に優れたヒートシンク及びそれを用
いた半導体装置を提供することにある。An object of the present invention is to provide a heat sink having low thermal expansion and high thermal conductivity and excellent plastic workability, and a semiconductor device using the heat sink.

【００１２】[0012]

【課題を解決するための手段】本発明に係る半導体装置
用ヒートシンクは、金属と該金属よりも熱膨張係数が小
さい無機化合物粒子とを有し、前記化合物粒子は断面の
面積率で前記粒子の全体の９５％以上が互いに連なった
複雑形状の塊となって分散していることを特徴とする。A heat sink for a semiconductor device according to the present invention comprises a metal and inorganic compound particles having a coefficient of thermal expansion smaller than that of the metal, and the compound particles have a cross-sectional area ratio of the particles. It is characterized in that 95% or more of the whole is dispersed in the form of lumps of a complicated shape that are continuous with each other.

【００１３】本発明は、金属と該金属よりも熱膨張係数
が小さい無機化合物粒子とを有し、前記化合物粒子は単
独で存在する粒子の数が断面で１００μｍ四方内に１０
０個以下であり、残りの前記化合物粒子は互いに連なっ
た複雑形状の塊となって分散していることを特徴とす
る。The present invention has a metal and inorganic compound particles having a thermal expansion coefficient smaller than that of the metal, and the number of particles of the compound particles present alone is 100 μm within a 100 μm square.
It is characterized in that the number of particles is 0 or less, and the rest of the compound particles are dispersed in the form of a complex-shaped mass that is continuous with each other.

【００１４】本発明は、金属と該金属よりも熱膨張係数
が小さい無機化合物粒子とを有し、前記化合物粒子はヴ
ィッカース硬さが３００以下であることを特徴とする。The present invention is characterized in that it has a metal and inorganic compound particles having a thermal expansion coefficient smaller than that of the metal, and the compound particles have a Vickers hardness of 300 or less.

【００１５】本発明は、金属と該金属よりも熱膨張係数
が小さい無機化合物粒子とを有し、２０℃での熱伝導率
１Ｗ／ｍ・Ｋ当りの２０〜１５０℃での平均熱膨張係数
の増加率が０.０２５〜０.０３５ppm／℃ であることを
特徴とする。The present invention has a metal and inorganic compound particles having a coefficient of thermal expansion smaller than that of the metal, and has an average coefficient of thermal expansion at 20 to 150 ° C. per 1 W / m · K of thermal conductivity at 20 ° C. The increase rate is 0.025 to 0.035 ppm / ° C.

【００１６】本発明は、金属と該金属よりも熱膨張係数
が小さい無機化合物粒子とを有し、前記化合物粒子は互
いに連なり塊となって分散しており、前記塊は塑性加工
によって伸ばされた方向に延びていることを特徴とす
る。The present invention has a metal and inorganic compound particles having a coefficient of thermal expansion smaller than that of the metal, and the compound particles are continuous with each other and dispersed as a lump, and the lump is stretched by plastic working. It is characterized by extending in the direction.

【００１７】本発明は、銅と酸化銅粒子とを有し、前記
酸化銅粒子は断面の面積率で前記粒子の全体の９５％以
上が互いに連なった複雑形状の塊となって分散している
ことを特徴とする。According to the present invention, copper and copper oxide particles are contained, and the copper oxide particles are dispersed in a complex-shaped mass in which 95% or more of the entire particles in a cross-sectional area ratio are connected to each other. It is characterized by

【００１８】本発明は、前述に記載の半導体装置用ヒー
トシンク表面にＮｉめっき層を有することを特徴とす
る。The present invention is characterized by having a Ni plating layer on the surface of the heat sink for a semiconductor device described above.

【００１９】本発明は、半導体素子と、信号を入出力す
る配線と、前記半導体素子を冷却するヒートシンクとを
有する半導体装置において、前記ヒートシンクは前記素
子を搭載する平板部とその反対面側に設けられたフィン
部分とが一体に形成され、前記半導体素子とヒートシン
クとは直接接合されていることを特徴とする。According to the present invention, in a semiconductor device having a semiconductor element, a wiring for inputting and outputting a signal, and a heat sink for cooling the semiconductor element, the heat sink is provided on a flat plate portion on which the element is mounted and on an opposite surface side thereof. The formed fin portion is integrally formed, and the semiconductor element and the heat sink are directly joined to each other.

【００２０】本発明は、半導体素子と、信号を入出力す
る配線と、前記半導体素子を冷却するヒートシンクとを
有する半導体装置において、前記ヒートシンクは前記素
子を搭載する平板部とその反対面側に設けられたフィン
部分とが一体に形成され、半導体素子が１個のヒートシ
ンク上に複数個搭載されていることを特徴とする。前記
ヒートシンクは熱膨張係数が１５×１０-6℃以下，熱伝
導率が１３０Ｗ／ｍＫ以上，ヴィッカース硬度が３００
以下であること、ＣｕとＣｕ2Ｏ との複合材からなるこ
と、ＣｕとＣｕ2Ｏ ，Ａｌ2Ｏ3及びＳｉＯ2 の少なくと
も１種の粒子との複合材であること、前記Ｃｕ2Ｏ の結
晶粒はＣｕの結晶粒の加工方向に延伸されていること、
前記フィン部分と反対側の面には半導体素子を搭載する
基板を位置合わせするための突起が設けられているこ
と、前記フィン部分と反対側の面には前記半導体素子を
位置合わせするための突起が設けられていることが好ま
しい。According to the present invention, in a semiconductor device having a semiconductor element, wiring for inputting / outputting a signal, and a heat sink for cooling the semiconductor element, the heat sink is provided on a flat plate portion on which the element is mounted and on an opposite surface side thereof. And a plurality of semiconductor elements are mounted on one heat sink. The heat sink has a coefficient of thermal expansion of 15 × 10 −6 ° C. or less, a thermal conductivity of 130 W / mK or more, and a Vickers hardness of 300.
Or less, it made of a composite material of Cu and Cu 2 O, it is a composite material of Cu and Cu 2 O, at least one of the particles of Al 2 O 3 and SiO 2, of the Cu 2 O The crystal grains are drawn in the processing direction of the Cu crystal grains,
A protrusion for aligning the substrate on which the semiconductor element is mounted is provided on the surface opposite to the fin portion, and a protrusion for aligning the semiconductor element on the surface opposite to the fin portion. Is preferably provided.

【００２１】即ち、本発明に係るフィン付ヒートシンク
は金属として電気導電性の高いＡｕ，Ａｇ,Ｃｕ,Ａｌが
用いられ、特にＣｕは高融点で高強度を有する点で最も
優れている。また、無機化合物として前述の様にベース
の金属に対して極端に硬さの違う従来のＳｉＣ，Ａｌ2
Ｏ3等の化合物ではなく比較的軟かい粒子で焼結後に安
定で、２０〜１５０℃の範囲での平均熱膨張係数が好ま
しくは５.０×１０-6／℃以下、より好ましくは３.５×
１０-6／℃ 以下で、ヴィッカース硬さが３００以下の
ものが好ましい。このように無機化合物粒子として軟か
いものを用いることによって焼結後の熱間，冷間による
高い塑性加工性が得られ、特にこれらの圧延が可能にな
ることから製造時間が短縮されるとともに比較的薄い板
を得ることができる。そして、その複合材料は無機粒子
を分散させているため高い強度を得ることができる。無
機化合物粒子として酸化銅，酸化錫，酸化鉛，酸化ニッ
ケル等が考えられる。しかし、特に熱膨張係数の最も小
さく軟やい酸化銅が好ましい。That is, the heat sink with fins according to the present invention uses Au, Ag, Cu, Al having a high electric conductivity as a metal, and Cu is most excellent in that it has a high melting point and a high strength. Further, as an inorganic compound, as described above, conventional SiC, Al 2 having extremely different hardness from the base metal is used.
It is not a compound such as O 3 but relatively soft particles and is stable after sintering, and the average coefficient of thermal expansion in the range of 20 to 150 ° C. is preferably 5.0 × 10 −6 / ° C. or less, more preferably 3.0. 5x
It is preferably 10 −6 / ° C. or less and has a Vickers hardness of 300 or less. In this way, by using soft inorganic compound particles, high plastic workability due to hot and cold after sintering can be obtained, and in particular, because these rolling becomes possible, the manufacturing time is shortened and comparison is made. A thin plate can be obtained. Since the composite material has the inorganic particles dispersed therein, high strength can be obtained. As the inorganic compound particles, copper oxide, tin oxide, lead oxide, nickel oxide, etc. can be considered. However, copper oxide having the smallest coefficient of thermal expansion and softness is particularly preferable.

【００２２】更に、本発明に係る複合材料はＳｉＣ，Ａ
ｌ2Ｏ3等のよりヴィッカース硬さが１０００以上の硬い
平均粒径３μｍ以下の微細なセラミックス粒子を５体積
％以下含有させてより強化させるのが好ましい。Further, the composite material according to the present invention is made of SiC, A
It is preferable that 5% by volume or less of fine ceramic particles having an average Vickers hardness of 1000 or more and a hard average particle diameter of 3 μm or less, such as l 2 O 3 or the like, be contained to further strengthen the ceramics.

【００２３】本発明におけるヒートシンクは溶解又は焼
結後、圧延等によって所望の厚さとし、更にプレスによ
る塑性加工によって最終形状に形成することができる。The heat sink according to the present invention can be formed into a final shape by melting or sintering, then rolling to a desired thickness, and further by plastic working by pressing.

【００２４】特に、本発明は、第一酸化銅(Ｃｕ2Ｏ）を
２０〜８０体積％含む銅（Ｃｕ）合金からなり、前記Ｃ
ｕ2Ｏ 相及びＣｕ相がそれぞれ分散した組織を有し、室
温から３００℃における熱膨張係数が５×１０-6〜１４
×１０-6／℃及び熱伝導率が３０〜３２５Ｗ／ｍ・Ｋで
あるものが好ましい。In particular, the present invention comprises a copper (Cu) alloy containing 20 to 80% by volume of cuprous oxide (Cu 2 O),
It has a structure in which the u 2 O phase and the Cu phase are dispersed, and has a thermal expansion coefficient of 5 × 10 −6 to 14 at room temperature to 300 ° C.
Those having a thermal conductivity of × 10 -6 / ° C and a thermal conductivity of 30 to 325 W / m · K are preferable.

【００２５】また、この銅−酸化銅複合材料は、第一酸
化銅(Ｃｕ2Ｏ）を２０〜８０体積％含み、残部が銅（Ｃ
ｕ）で、前記Ｃｕ2Ｏ 相及びＣｕ相が配向した組織を有
し、室温から３００℃における熱膨張係数が５×１０-6
〜１４×１０-6／℃であり、また熱伝導率が３０〜３２
５Ｗ／ｍ・Ｋで、かつ配向方向の熱伝導率が配向方向に
直角な方向の２倍以上とするものが好ましい。This copper-copper oxide composite material contains 20 to 80% by volume of cuprous oxide (Cu 2 O), and the balance is copper (C 2 O 3).
u) has a structure in which the Cu 2 O phase and the Cu phase are oriented and has a thermal expansion coefficient of 5 × 10 −6 from room temperature to 300 ° C.
˜14 × 10 −6 / ° C. and a thermal conductivity of 30 to 32
It is preferable that the thermal conductivity is 5 W / m · K and the thermal conductivity in the orientation direction is at least twice the thermal conductivity in the direction perpendicular to the orientation direction.

【００２６】本発明に係るヒートシンクは、溶解法又は
粉末冶金法によって得られる。粉末冶金法は以下の通り
である。無機化合物粒子の一例として第一酸化銅（Ｃｕ
2Ｏ)、金属の一例として銅（Ｃｕ）粉とを有する混合粉
末をプレス成形する工程と、８００℃〜１０５０℃で焼
結する工程と、冷間もしくは熱間で塑性加工する工程
と、を含むことを特徴とする。The heat sink according to the present invention is obtained by a melting method or a powder metallurgy method. The powder metallurgy method is as follows. As an example of the inorganic compound particles, cuprous oxide (Cu
2 O), a step of press-molding a mixed powder having copper (Cu) powder as an example of the metal, a step of sintering at 800 ° C. to 1050 ° C., and a step of cold or hot plastic working. It is characterized by including.

【００２７】また、本発明に係るヒートシンクの製造方
法は、第二酸化銅（ＣｕＯ）を10.8〜４８.８体積％含
み、残部が銅(Ｃｕ）と不可避的不純物からなる混合粉
末をプレス成形する工程と、８００℃〜１０５０℃で成
形固化とともにＣｕＯをＣｕと反応させＣｕ2Ｏ に変態
させる焼結工程と、冷間もしくは熱間プレスによる塑性
加工する工程と、その後の焼鈍工程を含むことが好まし
い。The heat sink manufacturing method according to the present invention includes a step of press-molding a mixed powder containing cupric oxide (CuO) in an amount of 10.8 to 48.8% by volume and the balance copper (Cu) and inevitable impurities. It is preferable to include a sintering step of reacting CuO with Cu and transforming into Cu 2 O at 800 ° C. to 1050 ° C. at the time of forming and solidifying, a step of plastic working by cold or hot pressing, and a subsequent annealing step. .

【００２８】本発明に係るヒートシンクは、１７.６×
１０-6／℃ の熱膨張係数と３９１Ｗ／ｍ・Ｋの高い熱
伝導率を有するＣｕと１２Ｗ／ｍ・Ｋの熱伝導率と２.
７×１０-6／℃の低熱膨張率を有するＣｕ2Ｏ を複合化
させた材料であり、焼結体組成として、Ｃｕ−２０〜８
０体積％Ｃｕ2Ｏ の組成範囲で選択され、室温から３０
０℃における熱膨張係数が５×１０-6〜１４×１０-6／
℃であり、また熱伝導率が３０〜３２５Ｗ／ｍ・Ｋを有
することができる。Ｃｕ2Ｏ 含有量は、２０％以上で放
熱板に要求される熱膨張係数が得られ、８０体積％以下
で十分な熱伝導性や構造体としての強度が得られるため
である。The heat sink according to the present invention is 17.6 ×.
Cu with a coefficient of thermal expansion of 10 -6 / ° C and a high thermal conductivity of 391 W / m · K and a thermal conductivity of 12 W / m · K and 2.
It is a material obtained by compounding Cu 2 O having a low coefficient of thermal expansion of 7 × 10 −6 / ° C., and has a sintered body composition of Cu-20 to 8
It is selected in the composition range of 0% by volume Cu 2 O, and is from room temperature to 30
Coefficient of thermal expansion at 0 ° C. is 5 × 10 −6 to 14 × 10 −6 /
And a thermal conductivity of 30 to 325 W / mK. This is because when the Cu 2 O content is 20% or more, the thermal expansion coefficient required for the heat sink is obtained, and when it is 80% by volume or less, sufficient thermal conductivity and strength as a structure are obtained.

【００２９】本発明においては、Ｃｕ粉末とＣｕ2Ｏ 粉
末もしくはＣｕＯ粉末を原料粉として所定比率で混合
し、金型で冷間プレスした後、焼結し、必要に応じて冷
間あるいは熱間で塑性加工が施される。In the present invention, Cu powder and Cu 2 O powder or CuO powder are mixed as a raw material powder in a predetermined ratio, cold pressed in a mold and then sintered, and if necessary, cold or hot. Plastic working is performed.

【００３０】原料粉の混合は、Ｖミキサー，ポットミル
あるいはメカニカルアロイング等によって行われるが、
原料粉末の粒径は、プレス成形性や焼結後のＣｕ2Ｏ の
分散性に影響を及ぼすので、Ｃｕ粉末は１００μｍ以
下、Ｃｕ2Ｏ 及びＣｕＯ粉末の粒径は１０μｍ以下、特
に１〜２μｍが好ましい。The raw material powders are mixed by a V mixer, a pot mill or mechanical alloying.
Since the particle size of the raw material powder affects the press moldability and the dispersibility of Cu 2 O after sintering, the particle size of Cu powder is 100 μm or less, and the particle size of Cu 2 O and CuO powder is 10 μm or less, particularly 1 to 2 μm. Is preferred.

【００３１】次に、混合粉末は金型を用い、４００〜１
０００kg／cm2 の圧力で冷間プレス成形されるが、Ｃｕ
2Ｏ 含有量の増加につれて圧力を高めることが望まし
い。Next, a mixed powder is used in a mold, and 400 to 1 is used.
Cold press-formed at a pressure of 000 kg / cm 2 , but Cu
It is desirable to increase the pressure as the 2 O content increases.

【００３２】混合粉末の予備成形体は、アルゴンガス雰
囲気中で常圧焼結，ＨＩＰあるいはホットプレスによる
加圧焼結されるが、８００℃〜１０５０℃で３時間程度
が好ましく、Ｃｕ2Ｏ 含有量の増加につれて温度が高め
られる。焼結温度はベース金属によって異なるが、特に
Ｃｕにおいては８００℃以下では、密度の高い焼結体が
得られず、１０５０℃以上ではＣｕとＣｕ2Ｏ の共晶反
応により部分溶解する危険性があるために好ましくな
く、９００℃〜１０００℃が好適である。The preform of the mixed powder is pressure-sintered in an argon gas atmosphere, pressure-sintered by HIP or hot pressing, preferably at 800 ° C. to 1050 ° C. for about 3 hours, and contains Cu 2 O. The temperature increases with increasing amount. Although the sintering temperature varies depending on the base metal, a high density sintered body cannot be obtained especially at 800 ° C or lower, and at 1050 ° C or higher, there is a risk of partial dissolution due to the eutectic reaction between Cu and Cu 2 O. It is not preferable because it is present, and 900 ° C. to 1000 ° C. is preferable.

【００３３】本発明を構成するＣｕ及びＣｕ2Ｏ は硬さ
が低く、延性に富むため、圧延，鍛造などの冷間あるい
は熱間加工が可能であり、焼結後に必要に応じて施され
る。加工を付与することによって、材料に熱伝導の異方
性が発現するが、強度向上や一定方向への伝熱が必要な
用途に対して有効である。Since Cu and Cu 2 O constituting the present invention have low hardness and rich ductility, they can be cold-worked or hot-worked such as rolled or forged, and are optionally applied after sintering. . By imparting processing, the material exhibits anisotropy in heat conduction, but it is effective for applications requiring improved strength and heat transfer in a certain direction.

【００３４】本発明においては、原料粉にＣｕＯを用
い、Ｃｕ粉末と混合・プレス成形した後に焼結過程でＣ
ｕを内部酸化させて、最終的にＣｕ相とＣｕ2Ｏ 相が分
散した組織を有する焼結体とすることができる。すなわ
ち、ＣｕＯはＣｕと共存する場合、高温においては
（１）式によりＣｕ2Ｏ に変態する方が熱的に安定であ
ることを利用している。In the present invention, CuO is used as the raw material powder, and after mixing with Cu powder and press molding, C is used in the sintering process.
By internally oxidizing u, it is possible to finally obtain a sintered body having a structure in which a Cu phase and a Cu 2 O phase are dispersed. That is, when CuO coexists with Cu, it is utilized that it is more thermally stable to transform into Cu 2 O according to the equation (1) at high temperature.

【００３５】 ２Ｃｕ＋ＣｕＯ → Ｃｕ＋Ｃｕ2Ｏ …（１） （１）式が平衡に到達するためには所定の時間を要する
が、例えば焼結温度が９００℃の場合には、３時間程度
で十分である。2Cu + CuO → Cu + Cu 2 O (1) It takes a predetermined time for the equation (1) to reach equilibrium. For example, when the sintering temperature is 900 ° C., about 3 hours is sufficient. .

【００３６】焼結体のＣｕ2Ｏ の粒径は密度，強度ある
いは塑性加工性に影響するので微細であることが好まし
い。しかしながら、粒径は粉末の混合方法に強く影響さ
れ、混合エネルギーが大きい方が粉同士の凝集が少な
く、焼結後に微細なＣｕ2Ｏ 相が得られる。The grain size of Cu 2 O in the sintered body affects the density, strength or plastic workability, and is therefore preferably fine. However, the particle size is strongly influenced by the powder mixing method, and the larger the mixing energy is, the less the powder particles are agglomerated and the fine Cu 2 O phase is obtained after sintering.

【００３７】本発明において、混合エネルギーの小さい
ＶミキサーではＣｕ2Ｏ相はＣｕ2Ｏ相の５０体積％以下
が粒径５０〜２００μｍで、残部が５０μｍ以下とし、
スチールボールを入れたポットミルでは５０μｍ以下、
そして、最も混合エネルギーの大きいメカニカルアロイ
ングでは１０μｍ以下と規定される。粒径が２００μｍ
以上では、気孔率が大きく増加し、塑性加工が困難にな
り、その量がＣu2Ｏ相の５０体積％以上になると、熱伝
導率の減少と特性のばらつきの増加を招き、半導体装置
の放熱板に不適となる。より好ましい組織は、５０μｍ
以下のＣu2Ｏ相がＣｕ相と均一に分散した組織である。
Ｃｕ2Ｏ の粒径はきわめて不規則な形状であるが、焼結
前の粒子が連らなっているので、より高倍率で見ること
により、焼結前の粒子径を見ることができる。Ｃｕ2Ｏ
相は１０μｍ以下が好ましい。本発明は、金属と好まし
くは該金属よりも熱膨張係数が小さい無機化合物を有
し、前記化合物はデンドライト状に形成されていること
を特徴とする。In the present invention, in the V mixer having a small mixing energy, the Cu 2 O phase has a particle size of 50 to 200 μm in 50% by volume or less of the Cu 2 O phase, and the balance is 50 μm or less,
With a pot mill containing steel balls, 50 μm or less,
The mechanical alloying with the largest mixing energy is specified to be 10 μm or less. 200 μm particle size
In the above case, the porosity greatly increases, making it difficult to perform plastic working, and when the amount is 50% by volume or more of the Cu 2 O phase, the thermal conductivity decreases and the characteristic variation increases, and the heat dissipation of the semiconductor device is reduced. Not suitable for boards. More preferable tissue is 50 μm
The following Cu 2 O phase has a structure in which it is uniformly dispersed with the Cu phase.
Although the particle size of Cu 2 O has an extremely irregular shape, since the particles before sintering are continuous, the particle diameter before sintering can be seen by looking at a higher magnification. Cu 2 O
The phase is preferably 10 μm or less. The present invention is characterized in that it has a metal and an inorganic compound having a thermal expansion coefficient smaller than that of the metal, and the compound is formed into a dendrite form.

【００３８】本発明は、前記化合物はデンドライト状に
形成され、該デンドライトの成長方向に粒状に分断され
た形態であることを特徴とする。The present invention is characterized in that the compound is formed into a dendrite and is divided into particles in the growth direction of the dendrite.

【００３９】本発明は、前記化合物はデンドライト状に
形成し、かつ該デンドライトの成長方向が一方向に配向
していることを特徴とする。The present invention is characterized in that the compound is formed into a dendrite and the growth direction of the dendrite is oriented in one direction.

【００４０】本発明は、前述の金属及び無機化合物が
銅，酸化銅と不可避的不純物を有し、前記酸化銅はデン
ドライト状に種々の形状で形成されていることを特徴と
する。本発明は、金属と無機化合物とを有し、前記無機
化合物はその全体に対して、断面の面積率で９０％以上
が径５〜３０μｍである棒状であり、塑性加工されてい
ることを特徴とする。The present invention is characterized in that the above-mentioned metal and inorganic compound have copper, copper oxide and inevitable impurities, and the copper oxide is formed into various shapes like dendrite. The present invention has a metal and an inorganic compound, and the inorganic compound is a rod-shaped member having a cross-sectional area ratio of 90% or more with a diameter of 5 to 30 μm, and is plastically processed. And

【００４１】本発明は、銅，酸化銅と不可避的不純物を
有し、前記酸化銅は１０〜５５体積％でデンドライトを
形成し、かつ室温から３００℃の線膨張係数が５×１０
-6〜１７×１０-6／℃で熱伝導率が１００〜３８０Ｗ／
ｍ・Ｋであることを特徴とする。The present invention has copper, copper oxide and unavoidable impurities, said copper oxide forms dendrite at 10 to 55% by volume, and has a linear expansion coefficient of 5 × 10 from room temperature to 300 ° C.
-6 to 17 × 10 -6 / ° C with a thermal conductivity of 100 to 380 W /
It is characterized by being m · K.

【００４２】本発明は、前記酸化銅は１０〜５５体積％
で成長方向が一方向に配向したデンドライトを形成し、
かつ室温から３００℃の線膨張係数が５×１０-6〜１７
×１０-6／℃で熱伝導率が１００〜３８０Ｗ／ｍ・Ｋで
あり、さらに配向方向の熱伝導率と配向方向に直角方向
の熱伝導率との差が５〜１００Ｗ／ｍ・Ｋであることを
特徴とする。In the present invention, the copper oxide is 10 to 55% by volume.
To form dendrites whose growth direction is oriented in one direction,
And the coefficient of linear expansion from room temperature to 300 ° C. is 5 × 10 −6 to 17
The thermal conductivity at × 10 -6 / ° C is 100 to 380 W / m · K, and the difference between the thermal conductivity in the orientation direction and the thermal conductivity in the direction perpendicular to the orientation direction is 5 to 100 W / m · K. It is characterized by being.

【００４３】本発明は、前述に記載の銅，酸化銅と不可
避的不純物を有し、銅中に共晶酸化銅が分散することを
特徴とする。The present invention is characterized by having the above-mentioned copper, copper oxide and unavoidable impurities, and eutectic copper oxide being dispersed in the copper.

【００４４】溶解法は以下の通りである。The dissolution method is as follows.

【００４５】本発明は、金属と該金属に対して共晶組織
を形成する無機化合物とを溶解し凝固する製造方法にあ
り、特に、銅または銅及び酸化銅を原料とし、酸素分圧
が１０-2Ｐａ〜１０3Ｐａ の雰囲気中で溶解後鋳造する
工程と、８００℃〜1050℃で熱処理後、冷間又は熱間で
塑性加工を施すものである。The present invention resides in a manufacturing method in which a metal and an inorganic compound forming a eutectic structure with respect to the metal are dissolved and solidified. In particular, copper or copper and copper oxide are used as raw materials, and the oxygen partial pressure is 10%. It is a step of casting after melting in an atmosphere of −2 Pa to 10 3 Pa, a heat treatment at 800 ° C. to 1050 ° C., and a cold or hot plastic working.

【００４６】原料として用いる酸化銅は第一酸化銅（Ｃ
ｕ2Ｏ）または第二酸化銅(ＣｕＯ)のいずれでもよい。
溶解，鋳造時の酸素分圧は１０-2Ｐａ〜１０3 Ｐａがよ
く、特に１０-1Ｐａ〜１０2 Ｐａが好ましい。また原料
の配合組成，酸素分圧及び凝固時の冷却速度等を変える
ことにより、複合材料のＣｕ相とＣｕ2Ｏ 相の比率や、
Ｃｕ2Ｏ 相の大きさ，形状を制御できる。Ｃｕ2Ｏ 相の
比率は、１０〜５５体積％の範囲がよい。特にＣｕ2Ｏ
相が５５体積％以上になると、熱伝導率が低下と特性の
バラツキを招くため、半導体装置の放熱板に不適とな
る。またＣｕ2Ｏ相の形状は、凝固時に形成されたデン
ドライト形状が好ましい。これはデンドライトでは樹枝
が複雑に入り組んでいるため、熱膨張が大きいＣｕ相の
膨張を熱膨張が小さいＣｕ２Ｏ 相がピニングするため
である。凝固時に形成されるデンドライト樹枝部は、原
料の配合組成または酸素分圧を変えることにより、Ｃｕ
相の場合、Ｃｕ2Ｏ 相の場合及びＣｕＯ相の場合に制御
できる。また共晶反応によりＣｕ相中に粒状で微細なＣ
ｕ2Ｏ 相を分散させ、強度向上を図ることが可能であ
る。さらに鋳造後、８００℃〜１０５０℃で熱処理する
ことにより、Ｃｕ2Ｏ 相の大きさ及び形状を制御でき
る。また上述の熱処理により凝固時に形成されたＣｕＯ
を内部酸化法を用いてＣｕ2Ｏ に変態させることも可能
である。すなわちＣｕＯはＣｕと共存する場合、高温に
おいては前述の（１）式によりＣｕ2Ｏ に変態する方が
熱的に安定であることを利用している。The copper oxide used as a raw material is cuprous oxide (C
u 2 O) or cupric oxide (CuO).
The oxygen partial pressure during melting and casting is preferably 10 -2 Pa to 10 3 Pa, and particularly preferably 10 -1 Pa to 10 2 Pa. By changing the composition of the raw materials, the oxygen partial pressure, the cooling rate during solidification, etc., the ratio of the Cu phase to the Cu 2 O phase of the composite material,
The size and shape of the Cu 2 O phase can be controlled. The ratio of the Cu 2 O phase is preferably in the range of 10 to 55% by volume. Especially Cu 2 O
When the phase is 55% by volume or more, the thermal conductivity is lowered and the characteristics are varied, which is not suitable for a heat sink of a semiconductor device. Further, the shape of the Cu 2 O phase is preferably the dendrite shape formed during solidification. This is because the dendrite has complicated intricate branches, and the expansion of the Cu phase having a large thermal expansion is pinned by the Cu 2 O phase having a small thermal expansion. The dendrite dendritic portion formed during solidification is Cu by changing the composition of the raw materials or the oxygen partial pressure.
In the case of the phase, control can be performed in the case of the Cu 2 O phase and the case of the CuO phase. Also, due to the eutectic reaction, fine and granular C in the Cu phase
It is possible to improve the strength by dispersing the u 2 O phase. Further, by performing heat treatment at 800 ° C. to 1050 ° C. after casting, the size and shape of the Cu 2 O phase can be controlled. In addition, CuO formed during solidification by the above heat treatment
It is also possible to transform into Cu 2 O using internal oxidation. That is, when CuO coexists with Cu, it is utilized that at a high temperature, it is more thermally stable to transform into Cu 2 O according to the above formula (1).

【００４７】（１）式が平衡に到達するためには所定の
時間を要するが、例えば熱処理温度が９００℃の場合に
は、３時間程度で十分である。また前記熱処理によりＣ
ｕ相中に共晶反応で生成した微細なＣｕ2Ｏ 相の大きさ
及び形状を制御できる。It takes a predetermined time for the equation (1) to reach equilibrium, but when the heat treatment temperature is 900 ° C., about 3 hours is sufficient. Also, by the heat treatment, C
It is possible to control the size and shape of the fine Cu 2 O phase generated by the eutectic reaction in the u phase.

【００４８】溶解方法は普通鋳造のほか、一方向凝固法
や薄板連続鋳造法などいずれの方法でもよい。普通鋳造
では、デンドライトが等方的に形成されるため、複合材
料は等方化される。また、一方向凝固法では、Ｃｕ相と
Ｃｕ2Ｏ 相が一方向に配向することにより、複合材料に
異方性を付与できる。さらに薄板連続鋳造法では、凝固
速度が速いため、デンドライトが微細となり、さらにデ
ンドライトは板厚方向に配向し、薄板複合材料に異方性
が付与できるとともに、製造コストの削減が可能とな
る。In addition to ordinary casting, the melting method may be any method such as a unidirectional solidification method or a thin plate continuous casting method. In ordinary casting, the dendrites are isotropically formed, so that the composite material is isotropic. Further, in the unidirectional solidification method, the Cu phase and the Cu 2 O phase are oriented in one direction, whereby anisotropy can be imparted to the composite material. Further, in the thin plate continuous casting method, since the solidification rate is high, the dendrites become fine, and the dendrites are oriented in the plate thickness direction, which can impart anisotropy to the thin plate composite material and reduce the manufacturing cost.

【００４９】さらに本発明に係る複合材料は、構成する
Ｃｕ相及びＣｕ2Ｏ 相の硬さが低く、延性に富むため、
圧延，鍛造などの冷間または熱間加工が可能であり、鋳
造または熱処理後に必要に応じて施される。加工を付与
することにより、複合材料に異方性が発現するほか、強
度向上を図ることができる。特に冷間または熱間加工に
より、Ｃｕ2Ｏ 相はある方向に配向し、複合材料に異方
性が出現する。この時、配向方向の熱伝導率と配向方向
に直角方向の熱伝導率との差が５〜１００Ｗ／ｍ・Ｋと
なる。Further, in the composite material according to the present invention, the hardness of the constituent Cu phase and Cu 2 O phase is low and the ductility is excellent,
Cold or hot working such as rolling or forging is possible, and is performed as necessary after casting or heat treatment. By imparting processing, anisotropy is exhibited in the composite material, and strength can be improved. In particular, during cold or hot working, the Cu 2 O phase is oriented in a certain direction, and anisotropy appears in the composite material. At this time, the difference between the thermal conductivity in the alignment direction and the thermal conductivity in the direction perpendicular to the alignment direction is 5 to 100 W / m · K.

【００５０】[0050]

【発明の実施の形態】（実施例１）原料粉として、７５
μｍ以下の電解Ｃｕ粉末と純度３Ｎ，粒径１〜２μｍの
Ｃｕ2Ｏ 粉末を用いた。Ｃｕ粉末とＣｕ2Ｏ 粉末を表１
に示す比率で１４００ｇ調合した後、スチールボールを
入れた乾式のポットミル中で１０時間以上混合した。混
合粉末を直径１５０mmの金型に注入し、Ｃｕ2Ｏ 含有量
に応じて４００〜１０００kg／cm2 の圧力で冷間プレス
して直径１５０mm×高さ１７〜１９mmの予備成形体を得
た。その後、予備成形体をアルゴンガス雰囲気中で焼結
させて化学分析，組織観察，熱膨張係数，熱伝導率及び
ヴィッカース硬さの測定に供した。なお、焼結温度はＣ
ｕ2Ｏ 含有量に応じて９００℃〜１０００℃の間で変化
させ、各温度で３時間保持した。熱膨張係数は室温から
３００℃の温度範囲でＴＭＡ（Thermal Mechanical Ana
lysis)装置を用いて行い、熱伝導率はレーザーフラッシ
ュ法により測定した。その結果を表１に併記した。BEST MODE FOR CARRYING OUT THE INVENTION (Example 1) As a raw material powder, 75
Electrolytic Cu powder having a particle size of 3 μm or less and Cu 2 O powder having a purity of 3 N and a particle size of 1 to 2 μm were used. Table 1 shows Cu powder and Cu 2 O powder.
After 1400 g was prepared at the ratio shown in, the mixture was mixed for 10 hours or more in a dry pot mill containing steel balls. The mixed powder was poured into a mold having a diameter of 150 mm and cold pressed at a pressure of 400 to 1000 kg / cm 2 depending on the Cu 2 O content to obtain a preform having a diameter of 150 mm and a height of 17 to 19 mm. Then, the preform was sintered in an argon gas atmosphere and subjected to chemical analysis, microstructure observation, thermal expansion coefficient, thermal conductivity, and Vickers hardness measurement. The sintering temperature is C
The temperature was changed between 900 ° C. and 1000 ° C. according to the u 2 O content, and the temperature was maintained for 3 hours. The thermal expansion coefficient is TMA (Thermal Mechanical Ana
lysis) device and the thermal conductivity was measured by the laser flash method. The results are also shown in Table 1.

【００５１】焼結体組成は化学分析の結果、配合組成と
一致していた。また、熱膨張係数及び熱伝導率は、表１
より明らかなように、ＣｕとＣｕ2Ｏ の組成比を調整す
ることによって、広範囲に亘って変化しており、フィン
付きヒートシンクに求められる熱的特性にコントロール
できることがわかった。As a result of chemical analysis, the composition of the sintered body was in agreement with the composition. Table 1 shows the thermal expansion coefficient and thermal conductivity.
As is clearer, it was found that by adjusting the composition ratio of Cu and Cu 2 O, the composition was changed over a wide range and the thermal characteristics required for the finned heat sink could be controlled.

【００５２】[0052]

【表１】 [Table 1]

【００５３】一方、３００倍でのミクロ組織を観察した
結果、Ｃｕ2Ｏ は混合工程において凝集，焼結工程にお
いて肥大成長するが、粒径は５０μｍ以下であり、Ｃｕ
相とＣｕ2Ｏ 相が均一に分散した緻密な組織となってい
た。On the other hand, as a result of observing the microstructure at 300 times, Cu 2 O aggregates in the mixing process and grows large in the sintering process, but the grain size is 50 μm or less.
The phase and Cu 2 O phase were uniformly dispersed to form a dense structure.

【００５４】また、Ｃｕ2Ｏ 粒子は断面の面積率でその
全体の９９％以上が連なった不規則な形状の塊となって
分散していることが明らかである。Further, it is clear that the Cu 2 O particles are dispersed as an irregularly-shaped lump in which 99% or more of the total area of the Cu 2 O particles are continuous.

【００５５】硬さ測定の結果、Ｃｕ相はＨｖ７５〜８
０、Ｃｕ2Ｏ がＨｖ２１０〜２３０の硬さであった。ま
た、機械加工性を旋盤及びドリル加工で評価した結果、
加工性は非常に良好であり、形状付与が容易であること
がわかった。As a result of hardness measurement, the Cu phase was Hv 75-8.
0, Cu 2 O had a hardness of Hv 210 to 230. In addition, as a result of evaluating the machinability by lathe and drilling,
It was found that the workability was very good and the shape could be easily given.

【００５６】（実施例２）粉末の混合をＶミキサーで行
った以外は、実施例１と同一の条件でＣｕ−５５体積％
Ｃｕ2Ｏ 焼結体を作成し、実施例１と同様に組織観察，
熱膨張係数及び熱伝導率の測定に供した。(Example 2) Cu-55% by volume was used under the same conditions as in Example 1 except that the powders were mixed in a V mixer.
A Cu 2 O sintered body was prepared, and the structure was observed in the same manner as in Example 1.
It was used for the measurement of thermal expansion coefficient and thermal conductivity.

【００５７】Ｃｕ−５５体積％Ｃｕ2Ｏ 焼結体の３００
倍ミクロ組織は、サイズが大きく異なるＣｕ2Ｏ が混在
した組織となっている。大きなサイズのＣｕ2Ｏ 粒子
は、Ｖミキサーによる混合中にＣｕ2Ｏ 粒子同士が凝集
して生成していた。熱膨張係数及び熱伝導率の値は、Ｃ
ｕ及びＣｕ2Ｏ がそれぞれ均一に分散した同一組成の焼
結体と明らかな差が認められなかったが、測定場所によ
るばらつきが若干大きくなる傾向が認められた。前述と
同様に、Ｃｕ2Ｏ 粒子のほとんどは不規則な形状で前述
よりもより大きな塊となって分散していることが分か
る。Cu-55 volume% Cu 2 O sintered body 300
The double microstructure is a structure in which Cu 2 O having different sizes are mixed. Large-sized Cu 2 O particles were formed by agglomeration of Cu 2 O particles during the mixing by the V mixer. The values of thermal expansion coefficient and thermal conductivity are C
Although no clear difference was observed with the sintered body of the same composition in which u and Cu 2 O were uniformly dispersed, respectively, there was a tendency that the variation depending on the measurement location was slightly increased. As described above, it can be seen that most of the Cu 2 O particles have an irregular shape and are dispersed in a larger lump than the above.

【００５８】（実施例３）原料粉として、７４μｍ以下
の電解Ｃｕ粉末と純度３Ｎ，粒径１〜２μｍのＣｕＯ粉
末を用い、Ｃｕ粉末とＣｕＯ粉末をＣｕ−２２.４ 体積
％ＣｕＯの組成比で３００ｇ調合した後、直径８mmの鋼
球を入れた直径１２０mmの遊星ボールミル容器中で２５
時間メカニカルアロイングした。その後、混合粉末を直
径８０mmの金型に注入し、１０００kg／cm2 の圧力で冷
間プレスして予備成形体を得た。その後、予備成形体を
アルゴンガス雰囲気中で８００℃×２時間の焼結を行
い、実施例１と同様に組織観察，熱膨張係数及び熱伝導
率の測定，酸化物Ｘ線回折に供した。Example 3 As raw material powder, electrolytic Cu powder of 74 μm or less and CuO powder having a purity of 3 N and a particle size of 1 to 2 μm were used, and the Cu powder and the CuO powder had a composition ratio of Cu-22.4% by volume CuO. 25g in a planetary ball mill container with a diameter of 120mm containing 8mm diameter steel balls.
Time mechanically alloyed. Then, the mixed powder was poured into a mold having a diameter of 80 mm and cold pressed at a pressure of 1000 kg / cm 2 to obtain a preform. After that, the preformed body was sintered in an argon gas atmosphere at 800 ° C. for 2 hours, and subjected to structure observation, measurement of thermal expansion coefficient and thermal conductivity, and oxide X-ray diffraction as in Example 1.

【００５９】１０００倍のミクロ組織を観察した結果、
実施例１あるいは２に比べて、Ｃｕ2Ｏ は微細であり、
粒径１０μｍ以下のＣｕ2Ｏ が均一分散している。組織
の微細化は、強度の向上や冷間圧延性の改善に好適であ
る。また、Ｃｕ2Ｏ 粒子は９５％以上が不規則な形状で
塊を形成しており、１００μｍ四方内に２０個前後球状
の粒子として存在していることが分かった。As a result of observing the microstructure of 1000 times,
Compared with Example 1 or 2, Cu 2 O is finer,
Cu 2 O having a particle diameter of 10 μm or less is uniformly dispersed. The refinement of the structure is suitable for improving strength and cold rolling property. Further, it was found that 95% or more of the Cu 2 O particles formed an agglomerate in an irregular shape and were present as about 20 spherical particles within a 100 μm square.

【００６０】焼結体について、Ｘ線回折により酸化物の
同定を行った結果、検出された回折ピークはＣｕ2Ｏ の
みであり、焼結中にＣｕＯがＣｕ2Ｏ に完全に変態した
ことを確認した。また、化学分析の結果、焼結体組成
は、設定通りにＣｕ−４０体積％Ｃｕ2Ｏ であった。As a result of identifying the oxide of the sintered body by X-ray diffraction, the diffraction peak detected was only Cu 2 O, and it was confirmed that CuO was completely transformed into Cu 2 O during sintering. confirmed. As a result of chemical analysis, the composition of the sintered body was Cu-40% by volume Cu 2 O as set.

【００６１】一方、熱膨張係数及び熱伝導率は、後述の
実施例５の同一組成のものと同等の値であった。On the other hand, the thermal expansion coefficient and the thermal conductivity were the same values as those of the same composition of Example 5 described later.

【００６２】（実施例４）実施例１と同じ原料粉を用
い、Ｃｕ粉末とＣｕ2Ｏ 粉末をＣｕ−５５体積％Ｃｕ2
Ｏ の組成比で５５０ｇ調合した後、Ｖミキサー中で混
合した。混合粉末を直径８０mmの金型に注入し、６００
kg／cm2 の圧力で冷間プレスして直径８０mm×２２mmの
予備成形体を得た。その後、予備成形体をアルゴンガス
雰囲気中で９７５℃×３時間の焼結を行った。次いで、
得られた焼結体を８００℃に加熱して２００トンプレス
で鍛練比１.８ まで鍛造した後５００℃で軟化焼鈍し、
実施例１と同様に組織観察，熱伝達係数及び熱伝導率の
測定に供した。(Embodiment 4) Using the same raw material powder as in Embodiment 1, Cu powder and Cu 2 O powder were Cu-55 volume% Cu 2
After preparing 550 g of O 2 in composition ratio, they were mixed in a V mixer. Pour the mixed powder into a mold with a diameter of 80 mm,
It was cold pressed at a pressure of kg / cm 2 to obtain a preform having a diameter of 80 mm × 22 mm. Then, the preform was sintered in an argon gas atmosphere at 975 ° C. for 3 hours. Then
The obtained sintered body was heated to 800 ° C, forged with a 200 ton press to a forging ratio of 1.8, and then softened and annealed at 500 ° C,
As in Example 1, the structure was observed, and the heat transfer coefficient and the thermal conductivity were measured.

【００６３】鍛造材は、側面に多少の耳割れが観察され
たが、それ以外の部分は健全であり、本発明の銅複合材
料は、塑性加工性に優れることが判明した。Although some edge cracks were observed on the side surface of the forged material, the other parts were sound, and it was found that the copper composite material of the present invention was excellent in plastic workability.

【００６４】鍛造材の鍛伸方向に平行な面の３００倍の
ミクロ組織では、Ｃｕ相及びＣu2Ｏ相は、変形して鍛伸
方向に配向しているが、クラック等の欠陥は認められな
い。また、Ｃｕ2Ｏ 粒子は９５％以上が連なった塊とな
り、塑性加工によって伸ばされた方向に延ばされている
ことが分かる。In the microstructure 300 times as large as the plane parallel to the forging direction of the forged material, the Cu phase and Cu 2 O phase are deformed and oriented in the forging direction, but defects such as cracks are recognized. Absent. Further, it can be seen that the Cu 2 O particles become a lump in which 95% or more are continuous and are extended in the direction in which they are extended by plastic working.

【００６５】表２は、レーザーフラッシュ法による熱伝
導率の測定結果を示すが、鍛造しない焼結ままの状態で
は、熱伝導率の異方性は認められない。しかし、鍛造す
ることによって異方性が生じ、Ｃｕ相及びＣｕ2Ｏ 相の
配向方向（鍛伸方向）に対して平行なＬ方向の熱伝導率
は、それに直角なＣ方向(鍛造方向)の２倍以上の値を示
している。また、室温から３００℃までの熱膨張係数を
測定した結果、異方性はほとんど認めらず、実施例１の
同一組成のものと同等であった。Table 2 shows the measurement results of the thermal conductivity by the laser flash method, but the anisotropy of the thermal conductivity is not recognized in the as-sintered state without forging. However, forging causes anisotropy, and the thermal conductivity in the L direction parallel to the orientation direction (forging direction) of the Cu phase and the Cu 2 O phase is in the C direction (forging direction) perpendicular to it. The value is more than double. As a result of measuring the coefficient of thermal expansion from room temperature to 300 ° C., almost no anisotropy was observed, and it was equivalent to that of Example 1 having the same composition.

【００６６】[0066]

【表２】 [Table 2]

【００６７】（実施例５）原料粉として、７４μｍ以下
の電解Ｃｕ粉末と純度３Ｎ，粒径１〜２μｍのＣｕＯ粉
末を用いた。Ｃｕ粉末とＣｕＯ粉末を表３に示す比率で
１４００ｇ調合した後、スチールボールを入れた乾式の
ポットミル中で１０時間以上混合した。混合粉末を直径
１５０mmの金型に注入し、ＣｕＯ含有量に応じて４００
〜1000kg／cm2 の圧力で冷間プレスして予備成形体を得
た。予備成形体をアルゴンガス雰囲気中で焼結させた
後、酸化物Ｘ線回折，組織観察，熱膨張係数及び熱伝導
率の測定に供した。なお、焼結温度はＣｕＯ含有量に応
じて９００℃〜１０００℃の間で変化させ、各温度で３
時間保持した。熱膨張係数は室温から３００℃の温度範
囲でＴＭＡ(Thermal Mechanical Analysis）装置を用い
て行い、熱伝導率はレーザーフラッシュ法により測定し
た。その結果を表３に併記した。(Embodiment 5) As raw material powder, electrolytic Cu powder of 74 μm or less and CuO powder having a purity of 3N and a particle size of 1 to 2 μm were used. After preparing 1400 g of Cu powder and CuO powder in the ratio shown in Table 3, they were mixed in a dry pot mill containing steel balls for 10 hours or more. Pour the mixed powder into a mold with a diameter of 150 mm, and add 400 according to the CuO content.
A preform was obtained by cold pressing at a pressure of up to 1000 kg / cm 2 . After the preform was sintered in an argon gas atmosphere, it was subjected to oxide X-ray diffraction, microstructure observation, and thermal expansion coefficient and thermal conductivity measurements. The sintering temperature was changed between 900 ° C. and 1000 ° C. according to the CuO content, and was 3 at each temperature.
Held for hours. The thermal expansion coefficient was measured using a TMA (Thermal Mechanical Analysis) device in the temperature range from room temperature to 300 ° C., and the thermal conductivity was measured by the laser flash method. The results are also shown in Table 3.

【００６８】[0068]

【表３】 [Table 3]

【００６９】焼結体について、Ｘ線回折により酸化物の
同定を行った結果、検出された銅酸化物の回折ピークは
Ｃｕ2Ｏ のみであり、焼結中にＣｕＯからＣｕ2Ｏ への
変態が完全になされたことを確認した。[0069] The sintered body, the result of the identification of the oxide by X-ray diffraction, diffraction peaks of the detected cuprates are only Cu 2 O, transformation from CuO during sintering to Cu 2 O Confirmed that it was completely done.

【００７０】得られた試料Ｎo.１４の３００倍ミクロ組
織では、実施例１の同一組成のものと同様の組織を呈し
ており、Ｃｕ2Ｏ 相はＣｕとＣｕＯの酸化反応により生
成したＣｕ2Ｏ とＣｕＯが分解して生成したＣｕ2Ｏ か
らなっている。Ｃｕ2Ｏ 粒子は実施例１と同様である。The 300 times microstructure of the obtained sample No. 14 has the same structure as that of the same composition as in Example 1, and the Cu 2 O phase is Cu 2 formed by the oxidation reaction of Cu and CuO. It consists of Cu 2 O produced by decomposition of O and CuO. The Cu 2 O particles are the same as in Example 1.

【００７１】一方、熱膨張係数は、表３から明らかなよ
うに、Ｃｕ2Ｏ 粉末を素粉とした実施例１と比べて顕著
な差は見られないが、熱伝導率はＣｕＯを素粉とした方
が、ＣｕＯ配合量すなわちＣｕ2Ｏ 含有量が５０体積％
以上で高くなる傾向が見られる。これは焼結体の密度
が、ＣｕＯを素粉とする方が高いことに起因している。
図１は表１及び表３に示した熱伝導率(ｘ)と熱膨張係数
(ｙ)との関係を示す線図である。本実施例のこれらの関
係はｙ＝０.０３１ｘ＋４.６５によって求められる値以
上で、ｙ＝０.０３１ｘ＋５.９５で求められる値以下と
なる。従って、傾斜は２０℃の熱伝導率１Ｗ／ｍ・Ｋ当
りの２０〜２５０℃での平均熱膨張係数として０.０２
５〜０.０３５ppm ／℃とするものが好ましい。On the other hand, as is clear from Table 3, the coefficient of thermal expansion is not significantly different from that of Example 1 in which Cu 2 O powder is used as the base powder, but the thermal conductivity is CuO powder. The content of CuO, that is, the content of Cu 2 O is 50% by volume.
There is a tendency to increase above the above. This is because the density of the sintered body is higher when CuO is used as the raw powder.
Figure 1 shows the thermal conductivity (x) and coefficient of thermal expansion shown in Tables 1 and 3.
It is a diagram which shows the relationship with (y). In the present embodiment, these relationships are not less than the value obtained by y = 0.31x + 4.65 and not more than the value obtained by y = 0.031x + 5.95. Therefore, the slope is 0.02 as an average thermal expansion coefficient at 20 to 250 ° C per 1 W / mK of thermal conductivity at 20 ° C.
It is preferably 5 to 0.035 ppm / ° C.

【００７２】（実施例６）(Example 6)

【００７３】[0073]

【表４】 [Table 4]

【００７４】銅と純度２ＮのＣｕ2Ｏ 粉末を表４に示す
比率で調合した原料を大気溶解後に鋳造した複合材料に
関して、線膨張係数，熱伝導率及び硬さを測定した。熱
膨張係数は、標準試料をＳｉＯ2 とし、押し棒式測定装
置を用いて室温から３００℃の温度範囲で測定した。ま
た熱伝導率はレーザーフラッシュ法により測定した。そ
の結果を表１に併記した。また、得られた試料Ｎo.３の
ミクロ組織では、酸化銅はデンドライト状に形成されて
おり、更に粒径１０〜５０μｍの粒状のもの、径１００
μｍの塊のものが見られた。The coefficient of linear expansion, thermal conductivity and hardness of the composite material obtained by casting raw materials prepared by mixing copper and Cu 2 O powder having a purity of 2N at the ratio shown in Table 4 after melting in air were measured. The thermal expansion coefficient was measured in a temperature range from room temperature to 300 ° C. using a push rod type measuring device with SiO 2 as a standard sample. The thermal conductivity was measured by the laser flash method. The results are also shown in Table 1. Further, in the microstructure of the obtained sample No. 3, the copper oxide was formed into a dendrite shape, and further, a granular material having a particle diameter of 10 to 50 μm and a diameter of 100
A lump of μm was observed.

【００７５】熱膨張係数及び熱伝導率は、表４より明ら
かなように、ＣｕとＣｕ2Ｏ の組成比を調整することに
よって、広範囲にわたって変化しており、フィン付き放
熱板に求められる熱的特性に制御できることがわかっ
た。As is clear from Table 4, the coefficient of thermal expansion and the coefficient of thermal conductivity change over a wide range by adjusting the composition ratio of Cu and Cu 2 O, and the thermal expansion coefficient required for the heat sink with fins is increased. It turned out that the characteristics can be controlled.

【００７６】一方、ミクロ組織はＣｕ2Ｏ がデンドライ
トを形成し、Ｃｕ相とＣｕ2Ｏ 相が均一に分散した緻密
な組織となっていた。[0076] On the other hand, microstructure Cu 2 O to form a dendrite, it has been a dense tissue Cu phase and Cu 2 O phase are uniformly dispersed.

【００７７】硬さ測定の結果、Ｃｕ相はＨｖ７５〜８
０、Ｃｕ2Ｏ がＨｖ２１０〜２３０の硬さであった。ま
た、機械加工性を旋盤及びドリル加工で評価した結果、
加工性は非常に良好であり、形状付与が容易であること
がわかった。As a result of hardness measurement, the Cu phase was Hv75-8.
0, Cu 2 O had a hardness of Hv 210 to 230. In addition, as a result of evaluating the machinability by lathe and drilling,
It was found that the workability was very good and the shape could be easily given.

【００７８】（実施例７）(Example 7)

【００７９】[0079]

【表５】 [Table 5]

【００８０】一方向凝固法を用いて、銅と純度３ＮのＣ
ｕ2Ｏ 粉末を表５に示す比率で調合した原料を、種々の
酸素分圧下で溶解後に鋳造し、複合材料を作製した。酸
素分圧１０-2Ｐａの雰囲気下で溶解後に鋳造した試料Ｎ
o.７のミクロ組織では、Ｃｕ2Ｏ 相はデンドライトを形
成し、さらに粒径５〜５０μｍの粒状のものが直線状に
連なって様々な方向に配向した組織となっていた。Using the unidirectional solidification method, copper and C having a purity of 3N were used.
Raw materials prepared by mixing the u 2 O powders in the ratios shown in Table 5 were melted under various oxygen partial pressures and then cast to prepare composite materials. Sample N cast after melting in an atmosphere with an oxygen partial pressure of 10 -2 Pa
In the microstructure of o.7, the Cu 2 O phase formed dendrites, and granular particles having a particle size of 5 to 50 μm were linearly connected and oriented in various directions.

【００８１】また、酸素分圧１０3 Ｐａの雰囲気下で溶
解後に鋳造した試料Ｎo.８のミクロ組織では、Ｃｕ2Ｏ
相がデンドライトを形成し、さらに一方向に配向した組
織となっており、さらに原料及び酸素分圧を変化させる
ことにより、Ｃｕ2Ｏ 相の形状及び密度を制御できるこ
とがわかった。そして、粒径５〜３０μｍの粒状のも
の，棒状のものが半々位に形成されていた。In the microstructure of Sample No. 8 cast after melting in an atmosphere with an oxygen partial pressure of 10 3 Pa, Cu 2 O
It was found that the phases form dendrites and have a unidirectionally oriented structure, and the shape and density of the Cu 2 O phase can be controlled by changing the raw material and the oxygen partial pressure. Then, granular and rod-shaped particles having a particle size of 5 to 30 μm were formed in half a half.

【００８２】表５に、上記２種類のヒートシンク用複合
材料の線膨張係数及び熱伝導率の測定結果を示す。その
結果、いずれの複合材料においても、線膨張係数と熱伝
導率に異方性が認められた。Table 5 shows the measurement results of the linear expansion coefficient and the thermal conductivity of the above two kinds of composite materials for heat sinks. As a result, the anisotropy was found in the linear expansion coefficient and the thermal conductivity of any of the composite materials.

【００８３】なお、原料溶湯中に酸素ガスをバブリング
することによっても、雰囲気ガスとして酸素を用いた場
合と同様の結果が得られた。By bubbling oxygen gas into the molten material, the same results as when oxygen was used as the atmosphere gas were obtained.

【００８４】（実施例８）(Example 8)

【００８５】[0085]

【表６】 [Table 6]

【００８６】前述の試料Ｎo.８を９００℃において９０
％の加工度まで熱間加工した結果、加工性は健全であ
り、本発明の複合材料は、塑性加工性に優れることが判
明した。表６に示す試料Ｎo.９のミクロ組織では、鋳造
のままのものに比較して配向性が顕著となり、またＣｕ
2Ｏ 相は塑性加工方向に伸ばされ一方向に伸長して棒状
になり、１から２０の範囲でアスペクト比を有する組織
となった。棒径は２０μｍ以下で、１〜１０μｍがほど
んどである。また表６に併記するように、上記試料Ｎo.
９の線膨張係数及び熱伝導率には、いっそう顕著な異方
性が認められた。The above-mentioned sample No. 8 was heated at 900 ° C. for 90 minutes.
As a result of hot working up to a working degree of%, it was found that the workability was sound and that the composite material of the present invention had excellent plastic workability. In the microstructure of sample No. 9 shown in Table 6, the orientation becomes more remarkable as compared with the as-cast sample, and Cu
The 2 O 2 phase was stretched in the plastic working direction and then stretched in one direction to form a rod shape, and the structure had an aspect ratio in the range of 1 to 20. The rod diameter is 20 μm or less, and 1 to 10 μm is common. As shown in Table 6, the sample No.
A more remarkable anisotropy was observed in the coefficient of linear expansion and thermal conductivity of No. 9.

【００８７】（実施例９）図２は本発明に係る半導体装
置の断面図である。半導体素子１０１は例えば論理素子
である。チップ表面側（図では下側）を入出力配線パッ
ドが例えばＡｕあるいは半田等からなるバンプ１０２に
よって基板１０３上のパッドに接続され、さらに基板上
の配線を介して半田ボール１０４に接続されるといった
公知の構造となっている。これらの接続がＡｕワイヤボ
ンディング等の公知の方法でなされてもかまわない。本
発明の特徴とするところは半導体素子１０１の裏面側で
放熱を行う部分の構造に関するものである。すなわち半
導体素子１０１の裏面は半田などの接合材１０５によっ
てヒートシンク１０６に直接接合されている。ここでヒ
ートシンク１０６には放熱性を得るためのフィン１０７
が設けられ、半導体素子１０１と接合する平板部１０８
と一体の成形物である。従来の半導体装置は、半導体チ
ップは接合材により中間ヒートシンクに接合され、さら
に熱伝導性グリース等の他の接合材により外部ヒートシ
ンクに接続される構造である。従来の半導体装置では中
間ヒートシンクを低熱膨張材料で構成し半田などの接合
材でチップと接合することにより応力を低減し、さら
に、放熱性を得るためのアルミニウム等の熱膨張係数の
大きい材料によりフィン付ヒートシンクを構成し、これ
らを接続するため熱伝導性グリース等の材料を用いてい
た。従来の半導体装置はヒートシンクが一体でない。図
２の本発明のヒートシンク１０６は熱膨張係数が１５×
１０-6／℃以下，熱伝導率が１３０Ｗ／ｍＫ以上，ヴィ
ッカース硬度が３００以下である。ヒートシンク１０６
の材質は、実施例１〜８にて得られたＣｕとＣｕ2Ｏ と
の複合材からなる。Ｃｕ2Ｏ の含有率が３０ｗｔ％の場
合は熱膨張係数が１３×１０-6／℃以下，熱伝導率が２
３０Ｗ／ｍＫ，ヴィッカース硬度が３００以下であり、
Ｃｕ2Ｏ 含有率が４０ｗｔ％の場合は熱膨張係数が１１
×１０-6／℃以下，熱伝導率が１８０Ｗ／ｍＫ，ヴィッ
カース硬度が３００以下である。また、ＣｕとＡｌ2Ｏ3
の複合材，ＣｕとＳｉＯ2 の複合材、あるいはＣｕとＣ
ｕ2Ｏ とＡｌ2Ｏ3の複合材など、上記の数値範囲を満た
すものであるならばどのような材質でもかまわない。図
３は本発明の半導体素子をフィン側から見た平面図であ
り図中にはヒートシンク１０６しか観察されていない。
フィン１１０が適宜設定された間隔で溝部１１１を挟ん
で配置されている。(Embodiment 9) FIG. 2 is a sectional view of a semiconductor device according to the present invention. The semiconductor element 101 is, for example, a logic element. An input / output wiring pad is connected to the pad on the substrate 103 by a bump 102 made of, for example, Au or solder on the front surface side (lower side in the figure) of the chip, and further connected to a solder ball 104 via wiring on the substrate. It has a known structure. These connections may be made by a known method such as Au wire bonding. The feature of the present invention relates to the structure of the portion that radiates heat on the back surface side of the semiconductor element 101. That is, the back surface of the semiconductor element 101 is directly bonded to the heat sink 106 with a bonding material 105 such as solder. Here, the heat sink 106 has fins 107 for obtaining heat dissipation.
And a flat plate portion 108 to be joined with the semiconductor element 101.
It is a molded product integrated with. A conventional semiconductor device has a structure in which a semiconductor chip is bonded to an intermediate heat sink by a bonding material, and further connected to an external heat sink by another bonding material such as heat conductive grease. In the conventional semiconductor device, the intermediate heat sink is made of a low thermal expansion material, and the stress is reduced by bonding it to the chip with a bonding material such as solder. Furthermore, the fin is made of a material having a large thermal expansion coefficient such as aluminum for heat dissipation. A heat sink with a heat sink was constructed and a material such as heat conductive grease was used to connect them. In the conventional semiconductor device, the heat sink is not integrated. The heat sink 106 of the present invention in FIG. 2 has a coefficient of thermal expansion of 15 ×.
The temperature is 10 -6 / ° C or less, the thermal conductivity is 130 W / mK or more, and the Vickers hardness is 300 or less. Heat sink 106
Is made of the composite material of Cu and Cu 2 O obtained in Examples 1 to 8. When the Cu 2 O content is 30 wt%, the thermal expansion coefficient is 13 × 10 −6 / ° C. or less, and the thermal conductivity is 2
30 W / mK, Vickers hardness is 300 or less,
When the Cu 2 O content is 40 wt%, the coefficient of thermal expansion is 11
× 10 -6 / ° C. or less, a thermal conductivity of 180 W / mK, the Vickers hardness is 300 or less. In addition, Cu and Al 2 O 3
Composite material, Cu and SiO 2 composite material, or Cu and C
Any material may be used as long as it satisfies the above numerical range, such as a composite material of u 2 O and Al 2 O 3 . FIG. 3 is a plan view of the semiconductor element of the present invention viewed from the fin side, and only the heat sink 106 is observed in the figure.
The fins 110 are arranged so as to sandwich the groove portions 111 at appropriately set intervals.

【００８８】ヒートシンク１０６が一体であることによ
り、従来必要であった熱伝導グリースなど金属系材料に
比べて著しく熱伝導率が悪い部分を介在させる必要がな
くなるため、ヒートシンクの放熱性能が向上し、半導体
素子の冷却を効果的に行うことができる。従って、ヒー
トシンクと半導体チップが直接接合された半導体論理素
子とすることにより論理素子の動作周波数を向上させて
もチップの温度が限界以上に上昇することがなくなり、
論理処理速度を向上できる。また、従来ヒートシンクの
性能を更に向上させる場合にヒートシンク上に設けられ
ていた空冷ファンが不要になる。あるいはまた、従来ヒ
ートシンクが所望の冷却性能を得るために必要であった
寸法を小さくして半導体素子の実装占有面積を縮小する
といった効果が得られる。Since the heat sink 106 is integrated, it is not necessary to interpose a portion which has a remarkably poor thermal conductivity as compared with a metal material such as a heat conductive grease, which has been conventionally required, so that the heat dissipation performance of the heat sink is improved. The semiconductor element can be effectively cooled. Therefore, even if the operating frequency of the logic element is improved by using the semiconductor logic element in which the heat sink and the semiconductor chip are directly bonded, the temperature of the chip does not rise above the limit,
The logic processing speed can be improved. Further, when the performance of the heat sink is further improved, the air cooling fan provided on the heat sink becomes unnecessary. Alternatively, it is possible to obtain the effect of reducing the size required for the conventional heat sink to obtain the desired cooling performance and reducing the mounting area of the semiconductor element.

【００８９】従来の構造では中間ヒートシンクの熱膨張
係数を小さくすることにより半導体チップに加わる熱応
力を小さくしているが、本発明においても、ヒートシン
ク１０６の熱膨張係数が１５×１０-6／℃以下であるこ
とにより半導体チップに加わる熱応力が小さいため、組
み立て中の半導体チップへの応力による破損をなくし、
また、実動作中の繰り返し熱応力による半田などの接合
材の熱疲労を低減できる。また、熱伝導率が１３０Ｗ／
Ｋ以上であるから、従来押し出しアルミニウム等の比較
的高熱伝導率の外部ヒートシンクと低熱膨張低熱伝導率
の中間ヒートシンクで構成していた構造と同等以上の放
熱性能が得られ、さらに上述のように熱伝導グリースの
熱抵抗部分を削除して放熱性能を向上できる。また、ヴ
ィッカース硬度が３００以下であることからフィンの機
械加工が容易であるため、従来のセラミックからなるフ
ィン付ヒートシンクのように加工が困難で破損しやすい
といった問題がなく、従来の押し出しアルミニウム等と
同等のフィン形状を機械加工により容易に作製できる。In the conventional structure, the thermal stress applied to the semiconductor chip is reduced by reducing the thermal expansion coefficient of the intermediate heat sink, but in the present invention, the thermal expansion coefficient of the heat sink 106 is 15 × 10 −6 / ° C. Since the thermal stress applied to the semiconductor chip is small because it is the following, damage due to stress on the semiconductor chip during assembly is eliminated,
Further, thermal fatigue of the joining material such as solder due to repeated thermal stress during actual operation can be reduced. Also, the thermal conductivity is 130 W /
Since it is K or more, the heat radiation performance equal to or higher than that of the structure which is conventionally constituted by the external heat sink having relatively high thermal conductivity such as extruded aluminum and the intermediate heat sink having low thermal expansion and low thermal conductivity can be obtained. The heat resistance part of the conductive grease can be deleted to improve the heat dissipation performance. Further, since the Vickers hardness is 300 or less, the fins can be easily machined, so that there is no problem that the fins are difficult to process and easily damaged like a conventional heat sink with fins made of ceramic. An equivalent fin shape can be easily manufactured by machining.

【００９０】特に、棒状に形成されたＣｕ2Ｏ の方向を
フィンの長さ方向に形成させることにより、フィンの熱
伝導率はさらに高い。従って、Ｃｕ2Ｏ 伸展方向をフィ
ンの延伸方向と同じ方向とすることによって放熱性能が
さらに高めることができる。In particular, the heat conductivity of the fin is further increased by forming the rod-shaped Cu 2 O in the longitudinal direction of the fin. Therefore, the heat radiation performance can be further improved by making the Cu 2 O extending direction the same as the fin extending direction.

【００９１】図４は本発明の他の実施例の半導体素子の
断面図を示したもので、本実施例では複数個の半導体チ
ップがヒートシンク１０６に接合されたマルチチップモ
ジュールとなっている。本実施例においても上述と同様
の効果が得られ、放熱性能が優れていることにより搭載
するチップ数を従来より多くすることが可能である。な
お、図４では基板１０３は別々になっているが複数の半
導体チップで共通の一体形状の基板であってもかまわな
い。FIG. 4 is a sectional view of a semiconductor device according to another embodiment of the present invention. In this embodiment, a plurality of semiconductor chips are joined to a heat sink 106 to form a multi-chip module. Also in this embodiment, the same effect as described above can be obtained, and since the heat dissipation performance is excellent, it is possible to increase the number of chips to be mounted as compared with the conventional one. Although the substrates 103 are separate in FIG. 4, they may be integrated substrates that are common to a plurality of semiconductor chips.

【００９２】図５は本発明の他の実施例の半導体素子の
断面図を示したもので、本実施例ではヒートシンク１０
６のフィンと反対側の面にチップ位置合わせ突起１３
０，基板位置合わせ突起１３１が設けられている。チッ
プ位置合わせ突起１３０を設けることによりヒートシン
ク１０６に半導体素子１０１を実装する際の位置合わせ
が容易になる。また、基板位置合わせ突起１３１を設け
ることによりヒートシンク１０６に半導体チップ等が実
装された基板１０３を実装する際の位置合わせが容易に
なる。また、突起１３１は基板１０３周辺全体を取り囲
む形状とし容器状の形状とすることによりバンプ１０２
部へのアンダーフィル等のコーティング材の注入が容易
になり、同時に素子周辺がヒートシンク金属で取り囲ま
れることにより電磁ノイズを防止することで装置の誤動
作を防ぐことができる。FIG. 5 is a sectional view of a semiconductor device according to another embodiment of the present invention. In this embodiment, the heat sink 10 is used.
The chip alignment protrusion 13 is provided on the surface opposite to the fin of 6
0, a substrate alignment protrusion 131 is provided. Providing the chip alignment protrusion 130 facilitates alignment when mounting the semiconductor element 101 on the heat sink 106. Further, by providing the substrate alignment protrusion 131, the alignment when mounting the substrate 103 on which a semiconductor chip or the like is mounted on the heat sink 106 becomes easy. Further, the protrusion 131 has a shape that surrounds the entire periphery of the substrate 103 and has a container-like shape.
It becomes easy to inject a coating material such as underfill into the portion, and at the same time, the periphery of the element is surrounded by the heat sink metal so that electromagnetic noise can be prevented and malfunction of the device can be prevented.

【００９３】以上の説明では半導体素子は論理素子とし
たがメモリーやシステムＬＳＩやパワー素子等の他の素
子であっても同様の効果が得られる。In the above description, the semiconductor element is a logic element, but the same effect can be obtained even if it is another element such as a memory, a system LSI or a power element.

【００９４】[0094]

【発明の効果】本発明によれば、低熱膨張で高熱伝導性
を有するとともに高い塑性加工性を有する半導体装置用
ヒートシンクとそれを用いた半導体装置が得られる。According to the present invention, a heat sink for a semiconductor device having low thermal expansion and high thermal conductivity and high plastic workability, and a semiconductor device using the heat sink can be obtained.

【図面の簡単な説明】[Brief description of drawings]

【図１】熱膨張係数と熱伝導率との関係を示す線図。FIG. 1 is a diagram showing a relationship between a coefficient of thermal expansion and thermal conductivity.

【図２】本発明に係る半導体装置の断面図。FIG. 2 is a sectional view of a semiconductor device according to the present invention.

【図３】本発明に係る半導体装置用ヒートシンクのフィ
ン側の平面図。FIG. 3 is a plan view of a fin side of a heat sink for a semiconductor device according to the present invention.

【図４】本発明に係る半導体装置の断面図。FIG. 4 is a sectional view of a semiconductor device according to the present invention.

【図５】本発明に係る半導体装置の断面図。FIG. 5 is a sectional view of a semiconductor device according to the present invention.

【符号の説明】[Explanation of symbols]

１０１…半導体素子、１０２…バンプ、１０３…基板、
１０４…半田ボール、１０５…接合材、１０６…ヒート
シンク、１０７…フィン、１０８…平板部。101 ... Semiconductor element, 102 ... Bump, 103 ... Substrate,
104 ... Solder balls, 105 ... Bonding material, 106 ... Heat sink, 107 ... Fins, 108 ... Flat plate part.

───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平６−224334（ＪＰ，Ａ) 特開 昭64−12404（ＪＰ，Ａ) 実開 昭62−160540（ＪＰ，Ｕ) 国際公開00／34539（ＷＯ，Ａ１) (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 23/34 - 23/373 ─────────────────────────────────────────────────── ─── Continuation of the front page (56) References JP-A-6-224334 (JP, A) JP-A 64-12404 (JP, A) Practical application Sho-62-160540 (JP, U) International publication 00/34539 (WO, A1) (58) Fields investigated (Int.Cl. 7 , DB name) H01L 23 / 34-23 / 373

Claims (7)

(57)【特許請求の範囲】(57) [Claims] 【請求項１】半導体素子と、信号を入出力する配線と、
前記半導体素子を冷却するヒートシンクとを有する半導
体装置において、前記ヒートシンクは前記素子を搭載す
る平板部とその反対面側に設けられたフィン部分とが一
体に形成され、前記半導体素子とヒートシンクとは直接
接合され、前記ヒートシンクはＣｕとＣｕ 2 Ｏ との複合
材からなることを特徴とする半導体装置。1. A semiconductor element and wiring for inputting and outputting a signal,
In a semiconductor device having a heat sink for cooling the semiconductor element, the heat sink has a flat plate portion on which the element is mounted and a fin portion provided on the opposite surface side formed integrally, and the semiconductor element and the heat sink are directly connected to each other. Bonded , the heat sink is a composite of Cu and Cu 2 O
Wherein a Rukoto such from wood. 【請求項２】半導体素子と、信号を入出力する配線と、
前記半導体素子を冷却するヒートシンクとを有する半導
体装置において、前記ヒートシンクは前記素子を搭載す
る平板部とその反対面側に設けられたフィン部分とが一
体に形成され、半導体素子が１個のヒートシンク上に複
数個搭載され、前記ヒートシンクはＣｕとＣｕ 2 Ｏ との
複合材からなることを特徴とする半導体装置。2. A semiconductor element and wiring for inputting and outputting a signal,
In a semiconductor device having a heat sink for cooling the semiconductor element, the heat sink has a flat plate portion on which the element is mounted and a fin portion provided on the opposite surface side integrally formed, and the semiconductor element is on one heat sink. The heat sinks are made of Cu and Cu 2 O.
Wherein a Rukoto such a composite material. 【請求項３】前記ヒートシンクは熱膨張係数が１５×１
０-6℃以下，熱伝導率が１３０Ｗ／ｍＫ以上，ヴィッカ
ース硬度が３００以下であることを特徴とする請求項１
又は２記載の半導体装置。3. The heat sink has a coefficient of thermal expansion of 15 × 1.
0 -6 ° C. or less, a thermal conductivity of 130W / mK or more, claim 1, wherein the Vickers hardness of 300 or less
Alternatively, the semiconductor device according to item 2. 【請求項４】前記Ｃｕ2Ｏ の結晶粒はＣｕの結晶粒の加
工方向に延伸していることを特徴とする請求項１又は２
記載の半導体装置。4. The method of claim 1 or 2, characterized in that the Cu 2 O in crystal grains extend in the processing direction of the crystal grains of the Cu
The semiconductor device described. 【請求項５】前記フィン部分の長さ方向は前記Ｃｕ2Ｏ
の結晶粒の延伸方向と平行であることを特徴とする請求
項１又は２記載の半導体装置。5. The Cu 2 O is the longitudinal direction of the fin portion.
3. The semiconductor device according to claim 1 , wherein the semiconductor device is parallel to the extending direction of the crystal grains. 【請求項６】前記フィン部分と反対側の面には前記半導
体素子を位置合わせするための突起が設けられているこ
とを特徴とする請求項１〜５のいずれかに記載の半導体
装置。6. The semiconductor device according to any one of claims 1 to 5, characterized in that said projection for aligning said semiconductor element to the fin portion opposite to the surface are provided. 【請求項７】前記フィン部分と反対側の面には半導体素
子を搭載する基板を位置合わせするための突起が設けら
れていることを特徴とする請求項１〜５のいずれかに記
載の半導体装置。7. A semiconductor according to any one of claims 1 to 5, characterized in that protrusions for aligning a substrate for mounting a semiconductor element on a surface thereof opposite to the fin portion is provided apparatus.
JP12128299A 1999-04-28 1999-04-28 Semiconductor device Expired - Fee Related JP3451979B2 (en)

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JP4848539B2 (en) 2001-08-23 2011-12-28 Ｄｏｗａメタルテック株式会社 Heat sink, power semiconductor module, IC package
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JP5842457B2 (en) * 2011-01-24 2016-01-13 富士通株式会社 HEAT SPREADER AND MANUFACTURING METHOD THEREOF, SEMICONDUCTOR DEVICE, ELECTRONIC DEVICE
JP6711098B2 (en) 2016-04-15 2020-06-17 オムロン株式会社 Heat dissipation structure of semiconductor device
JP6790432B2 (en) 2016-04-15 2020-11-25 オムロン株式会社 Heat dissipation structure of semiconductor devices
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