JP3433260B2 - Metallized substrate and manufacturing method thereof - Google Patents
Metallized substrate and manufacturing method thereofInfo
- Publication number
- JP3433260B2 JP3433260B2 JP24646091A JP24646091A JP3433260B2 JP 3433260 B2 JP3433260 B2 JP 3433260B2 JP 24646091 A JP24646091 A JP 24646091A JP 24646091 A JP24646091 A JP 24646091A JP 3433260 B2 JP3433260 B2 JP 3433260B2
- Authority
- JP
- Japan
- Prior art keywords
- metal powder
- powder composition
- metal
- composition
- metallized
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
- H05K1/092—Dispersed materials, e.g. conductive pastes or inks
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/24—Reinforcing the conductive pattern
Landscapes
- Ceramic Products (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は，厚膜電子回路の導体層
形成およびセラミックス基板上に実装された電子機器用
素子，部品等が動作することによって発生する熱を拡散
するためのメタライズ組成物及びメタライズセラミック
ス基板とそれらの製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a metallized composition for forming a conductor layer of a thick film electronic circuit and for diffusing heat generated by the operation of electronic device elements and parts mounted on a ceramic substrate. Also, the present invention relates to a metallized ceramics substrate and a manufacturing method thereof.
【０００２】[0002]
【従来の技術】従来，電子回路基板には，高絶縁性，機
械的強度，他の電子素子を劣化させないこと，金属導体
と容易に接合体となること，熱伝導率が大きいなどの性
質が要求されている。この基板としてはアルミナ，窒化
物セラミックスがある。しかし，セラミックス単体で
は，電子機器に用いられるトランジスタ，ダイオード，
ＩＣ，ＬＳＩ，その他各種の電子部品を直接実装するこ
とができない。そのため，セラミックス表面に金属化膜
を形成し，導体あるいは金属とを接合することにより電
子回路を製造するものである。セラミックス表面への金
属化膜を形成する方法として，高融点金属法，活性金属
法，厚膜法，同時焼成法などが知られている。2. Description of the Related Art Conventionally, electronic circuit boards have properties such as high insulation, mechanical strength, no deterioration of other electronic elements, easy joining with metal conductors, and large thermal conductivity. Is required. Alumina and nitride ceramics are used as this substrate. However, with ceramics alone, transistors, diodes, and
ICs, LSIs and other various electronic components cannot be directly mounted. Therefore, an electronic circuit is manufactured by forming a metallized film on the surface of ceramics and joining a conductor or a metal. Known methods for forming a metallized film on the surface of ceramics include a high melting point metal method, an active metal method, a thick film method, and a co-firing method.
【０００３】[0003]
【発明が解決しようとする課題】従来はセラミックス基
板上へ銅導体ペーストを１０〜３０μｍ程度の厚みにス
クリーン印刷し，乾燥した後に窒素雰囲気において焼成
を行い回路形成を行う方法を用いている。しかしながら
上記の方法によるセラミックスへの金属化膜はセラミッ
クスと金属化膜との接着強度は４ｍｍ ２ （２ｍｍ×２ｍ
ｍ角）パッドの垂直引っ張り試験で２ｋｇ程度で有り，
１５０℃の高温エージング試験を行うと，１００時間後
で接合強度は初期の値に比べて半分以下程度に低下し
た。特に窒化物セラミックス用の銅ペーストは現在，接
合強度信頼性の高いものが得られていない。そこで本発
明の技術的課題は，上記の不安定な銅ペーストを改善す
るために，銅を主成分とする接合強度の高い，電気的特
性の優れた，かつ，環境試験において信頼性の高い金属
化膜が得られるメタライズ用金属粉末組成物及びメタラ
イズ基板を提供することにある。Conventionally, a method has been used in which a copper conductor paste is screen-printed on a ceramic substrate to a thickness of about 10 to 30 μm, dried and then fired in a nitrogen atmosphere to form a circuit. However, the metallized film on ceramics produced by the above method has an adhesive strength of 4 mm 2 (2 mm × 2 m) between the ceramic and the metallized film.
It is about 2 kg in the vertical tensile test of the pad.
When a high temperature aging test at 150 ° C. was performed, after 100 hours, the bonding strength decreased to less than half of the initial value. In particular, copper pastes for nitride ceramics are not currently available with high bonding strength reliability. Therefore, a technical problem of the present invention is to improve the unstable copper paste by using a metal containing copper as a main component, having high bonding strength, excellent electrical characteristics, and high reliability in an environmental test. It is intended to provide a metallized metal composition for metallization and a metallized substrate capable of obtaining a metalized film.
【０００４】[0004]
【課題を解決するための手段】本発明によれば、セラミ
ック基板上に、セラミックスに対して密着性の良い第１
金属粉末組成物と、この第１金属粉末組成物上に導体抵
抗の小さな第２金属粉末組成物とを重ねて形成したメタ
ライズ基板であって、前記第１金属粉末組成物は、Ｃｕ
を７０〜９５重量％含み残部Ｔｉからなり、前記第２金
属粉末組成物はＣｕとＩｎ、Ｓｎ、及びＳｂの内のいず
れか一種を含む低融点金属とからなり、前記低融点金属
は、前記第２金属粉末組成物の総量に対して５〜１０重
量％含有されていることを特徴とするメタライズ基板が
得られる。また、本発明によれば、セラミック基板上
に、セラミックスに対して密着性の良い第１金属粉末組
成物と、この第１金属粉末組成物上に導体抵抗の小さな
第２金属粉末組成物とを真空中乃至不活性雰囲気中でこ
の順に又は同時に、８００〜８５０℃の温度で焼き付け
ることによって形成することを含み、前記第１金属粉末
組成物は、Ｃｕを７０〜９５重量％含み残部Ｔｉからな
り、前記第２金属粉末組成物は、ＣｕとＩｎ、Ｓｎ、及
びＳｂの内のいずれか一種を含む低融点金属とからな
り、前記低融点金属は、前記第２金属粉末組成物の総量
に対して５〜１０重量％含有されていることを特徴とす
るメタライズ基板の製造方法が得られる。即ち、本発明
のメタライズ基板を製造するための第１金属粉末組成物
は、重量％表示で主成分のＣｕは７０〜９５％、Ｔｉは
５〜３０％の組成を有する。これらの元素の粉末を混合
し、窒化物および酸化物セラミックスの表面に塗布し、
そのメタライズ組成物上に、体積抵抗が１０−７Ω・ｍ
以下のＣｕ粉末に５〜１０重量％のＩｎ、Ｓｎ、及びＳ
ｂのいずれかの混合粉末からなる第２金属粉末組成物を
塗布して、高真空雰囲気中ないし不活性ガス雰囲気中に
おいて熱処理を施すことによって、セラミックスに対し
て高い接合強度と体積抵抗の小さいメタライズセラミッ
クス基板を得ることができるものである。ここで、本発
明に適用するセラミックス基板は、窒化物、例えば、Ａ
ｌＮやＳｉ３Ｎ４及び酸化物、例えばＡｌ２Ｏ３など、
あるいは数％の焼結助剤を含むセラミックス焼結体であ
ることが好ましい。According to the present invention, there is provided a first ceramic substrate having good adhesion to ceramics.
What is claimed is: 1. A metallized substrate comprising a metal powder composition and a second metal powder composition having a low conductor resistance stacked on the first metal powder composition, wherein the first metal powder composition is Cu.
Of 70% to 95% by weight and the balance of Ti ,
The powder composition is one of Cu, In, Sn, and Sb.
A metallized substrate is obtained which is composed of a low melting point metal containing one of them, and the low melting point metal is contained in an amount of 5 to 10 wt% with respect to the total amount of the second metal powder composition. Further, according to the present invention, a first metal powder composition having good adhesion to ceramics on a ceramic substrate, and a second metal powder composition having a low conductor resistance on the first metal powder composition. Forming the first metal powder by baking at a temperature of 800 to 850 ° C. in a vacuum or an inert atmosphere in this order or simultaneously.
The composition comprises 70 to 95 wt% Cu and the balance Ti.
The second metal powder composition contains Cu, In, Sn, and
And a low melting point metal containing any one of Sb
And the low melting point metal is the total amount of the second metal powder composition.
A metallized substrate manufacturing method is obtained which is characterized by containing 5 to 10% by weight . That is, the first metal powder composition for producing the metallized substrate of the present invention has a composition of 70 to 95% of Cu and 5 to 30% of Ti which are main components in terms of weight%. Powders of these elements are mixed and applied to the surface of nitride and oxide ceramics,
The metallized composition has a volume resistance of 10 −7 Ω · m.
5-10 wt% of In, Sn, and S in the following Cu powder
The second metal powder composition consisting of the mixed powder of b ) is applied and heat-treated in a high vacuum atmosphere or an inert gas atmosphere to obtain a metallized material having a high bonding strength and a small volume resistance with respect to ceramics. A ceramic substrate can be obtained. Here, the ceramic substrate applied to the present invention is a nitride such as A
1N or Si 3 N 4 and oxides such as Al 2 O 3 ,
Alternatively, it is preferably a ceramic sintered body containing a sintering aid of several percent.
【０００５】[0005]
【実施例】以下，本発明の実施例について図面を参照し
て説明する。本発明の実施例に係るメタライズ基板は，
窒化アルミニウムセラミックスの表面に塗布し，このセ
ラミックス基板にセラミックスに対して高い接合強度が
得られるペースト状の第１金属粉末組成物を印刷し，こ
の第１金属粉末組成物上にペースト状の体積抵抗の低い
第２金属粉末組成物を印刷し，高真空雰囲気中ないし不
活性ガス雰囲気中において８００〜８５０℃の範囲内の
温度で熱処理を施すことによって形成したものである。
このように構成されて，製造されたメタライズ基板は，
接合強度が高く，導体抵抗が小さいという利点をもつメ
タライズ基板となる。高い接合強度を有する第１金属粉
末組成物は，次のような材料および方法によって製造さ
れている。主成分であるＣｕ及びＴｉは平均粒径１〜１
０μm の微粉末を目標組成になるように秤量混合を行い
メタライズ組成物を得る。このメタライズ組成物にビヒ
クルを添加混合して，三本ロールミル等を用いて十分混
練し，均一に分散させスクリーン印刷に適した粘度に調
整しペースト状とする。バインダーとしてはアクリル系
樹脂など通常用いられているものを適用した。また，こ
の第１金属粉末組成物上に塗布する第２金属粉末組成物
のペーストは，第１金属粉末組成物と同様の方法によっ
て作られている。表１に本発明の１例として体積抵抗の
小さな第２金属粉末組成物としてＣｕを含むものを用い
た場合に製造されたメタライズ基板の特性およびセラミ
ックスに対して高い接着強度を示す第１金属粉末組成物
についてＣｕ９０重量％及びＴｉ１０重量％組成を持つ
ペーストを用いて形成されたメタライズ基板（比較例
１）を接着強度と体積抵抗とについて比較した結果を示
す。また，ガラスフリット添加のＣｕ１００％ペースト
（比較例２）に対しても比較した。表１の結果より，セ
ラミックスに対し高い接着強度を示し，かつ体積抵抗も
実用に耐え得るメタライズ基板を製造できることが判明
した。Embodiments of the present invention will be described below with reference to the drawings. The metallized substrate according to the embodiment of the present invention is
The paste is applied to the surface of aluminum nitride ceramics, the paste-like first metal powder composition capable of obtaining high bonding strength to the ceramics is printed on the ceramics substrate, and the paste-like volume resistance is applied onto the first metal powder composition. It is formed by printing a second metal powder composition having a low temperature and performing a heat treatment at a temperature in the range of 800 to 850 ° C. in a high vacuum atmosphere or an inert gas atmosphere.
The metallized substrate thus manufactured and manufactured is
The metallized substrate has the advantages of high bonding strength and low conductor resistance. The first metal powder composition having high bonding strength is manufactured by the following materials and methods. Cu and Ti as the main components have an average particle size of 1 to 1
A metallized composition is obtained by weighing and mixing fine powder of 0 μm so as to have a target composition. A vehicle is added to and mixed with this metallized composition, which is sufficiently kneaded using a three-roll mill or the like, uniformly dispersed, and adjusted to have a viscosity suitable for screen printing to form a paste. As the binder, a commonly used one such as an acrylic resin was applied. Further, the paste of the second metal powder composition applied on the first metal powder composition is prepared by the same method as that of the first metal powder composition. In Table 1, as an example of the present invention, the first metal powder showing the characteristics of the metallized substrate and the high adhesion strength to the ceramics produced when the second metal powder composition having a small volume resistance containing Cu is used. With respect to the composition, a result of comparing a metallized substrate (Comparative Example 1) formed by using a paste having a composition of 90% by weight of Cu and 10% by weight of Ti with respect to adhesive strength and volume resistance is shown. Also, a comparison was made with a Cu 100% paste with glass frit (Comparative Example 2). From the results shown in Table 1, it was found that it is possible to manufacture a metallized substrate which has a high adhesive strength to ceramics and has a practical volume resistance.
【０００６】[0006]
【表１】 [Table 1]
【０００７】[0007]
【発明の効果】以上説明したように，本発明によれば，
銅を主成分とする接合強度の高い，電気的特性の優れ
た，かつ，環境試験において信頼性の高い金属化膜が得
られるメタライズ用金属粉末組成物を用いたメタライズ
基板及びその製造方法を提供することができる。As described above, according to the present invention,
Provided are a metallized substrate using a metal powder composition for metallization containing copper as a main component, which has a high bonding strength, excellent electrical characteristics, and is highly reliable in an environmental test, and a manufacturing method thereof. can do.
フロントページの続き (56)参考文献 特開 昭62−246890（ＪＰ，Ａ) 特開 平３−69580（ＪＰ，Ａ)Continued front page (56) References JP-A-62-246890 (JP, A) JP-A-3-69580 (JP, A)
Claims (2)
して密着性の良い第１金属粉末組成物と、この第１金属
粉末組成物上に導体抵抗の小さな第２金属粉末組成物と
を重ねて形成したメタライズ基板であって、前記第１金
属粉末組成物は、Ｃｕを７０〜９５重量％含み残部Ｔｉ
からなり、前記第２金属粉末組成物はＣｕとＩｎ、Ｓ
ｎ、及びＳｂの内のいずれか一種を含む低融点金属とか
らなり、前記低融点金属は、前記第２金属粉末組成物の
総量に対して５〜１０重量％含有されていることを特徴
とするメタライズ基板。1. A first metal powder composition having good adhesion to ceramics, and a second metal powder composition having a small conductor resistance are formed on a ceramic substrate in an overlapping manner. The first metal powder composition contains Cu in an amount of 70 to 95% by weight and the balance is Ti.
The second metal powder composition is composed of Cu, In, and S.
a low melting point metal containing any one of n and Sb
The low-melting-point metal is contained in an amount of 5 to 10 wt% with respect to the total amount of the second metal powder composition.
して密着性の良い第１金属粉末組成物と、この第１金属
粉末組成物上に導体抵抗の小さな第２金属粉末組成物と
を真空中乃至不活性雰囲気中でこの順に又は同時に、８
００〜８５０℃の温度で焼き付けることによって形成す
ることを含み、前記第１金属粉末組成物は、Ｃｕを７０
〜９５重量％含み残部Ｔｉからなり、前記第２金属粉末
組成物は、ＣｕとＩｎ、Ｓｎ、及びＳｂの内のいずれか
一種を含む低融点金属とからなり、前記低融点金属は、
前記第２金属粉末組成物の総量に対して５〜１０重量％
含有されていることを特徴とするメタライズ基板の製造
方法。2. A first metal powder composition having good adhesion to ceramics on a ceramic substrate, and a second metal powder composition having a small conductor resistance on the first metal powder composition in vacuum or In an inert atmosphere, in this order or simultaneously, 8
Forming the first metal powder composition by baking at a temperature of 00 to 850 ° C.
The second metal powder, which comprises ~ 95% by weight and the balance is Ti.
The composition is one of Cu, In, Sn, and Sb.
Consisting of a low melting point metal containing one, the low melting point metal,
5-10 wt% relative to the total amount of the second metal powder composition
A method of manufacturing a metallized substrate, characterized in that it is contained .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24646091A JP3433260B2 (en) | 1991-09-02 | 1991-09-02 | Metallized substrate and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24646091A JP3433260B2 (en) | 1991-09-02 | 1991-09-02 | Metallized substrate and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0558764A JPH0558764A (en) | 1993-03-09 |
| JP3433260B2 true JP3433260B2 (en) | 2003-08-04 |
Family
ID=17148759
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24646091A Expired - Fee Related JP3433260B2 (en) | 1991-09-02 | 1991-09-02 | Metallized substrate and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3433260B2 (en) |
-
1991
- 1991-09-02 JP JP24646091A patent/JP3433260B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0558764A (en) | 1993-03-09 |
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