JP3421520B2 - Light emitting device and method of manufacturing the same - Google Patents

Light emitting device and method of manufacturing the same

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Publication number
JP3421520B2
JP3421520B2 JP30818196A JP30818196A JP3421520B2 JP 3421520 B2 JP3421520 B2 JP 3421520B2 JP 30818196 A JP30818196 A JP 30818196A JP 30818196 A JP30818196 A JP 30818196A JP 3421520 B2 JP3421520 B2 JP 3421520B2
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JP
Japan
Prior art keywords
light emitting
electrode
emitting element
conductive
lead frame
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP30818196A
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Japanese (ja)
Other versions
JPH10150224A (en
Inventor
康博 上田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
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Sanyo Electric Co Ltd
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Priority to JP30818196A priority Critical patent/JP3421520B2/en
Publication of JPH10150224A publication Critical patent/JPH10150224A/en
Application granted granted Critical
Publication of JP3421520B2 publication Critical patent/JP3421520B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
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    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
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    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
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    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
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    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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  • Engineering & Computer Science (AREA)
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  • Led Device Packages (AREA)
  • Led Devices (AREA)

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【発明の属する技術分野】本発明は、リードフレーム等
の支持体に発光ダイオード（ＬＥＤ）等の発光素子をマ
ウントしてなる発光装置及びその製造方法の技術分野に
関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a technical field of a light emitting device in which a light emitting element such as a light emitting diode (LED) is mounted on a support such as a lead frame and a manufacturing method thereof.

【０００２】[0002]

【従来の技術】近年ＧａＮ、ＩｎＧａＮ等の窒化物系化
合物半導体が、高輝度青色発光素子用材料として注目さ
れている。この系の半導体結晶成長用基板材料として
は、絶縁体であるサファイアや導電性の炭化けい素等が
使用可能であるが、後者を用いる結晶成長技術は十分に
確立されていない。2. Description of the Related Art In recent years, nitride-based compound semiconductors such as GaN and InGaN have attracted attention as materials for high brightness blue light emitting devices. As a substrate material for semiconductor crystal growth of this system, sapphire, which is an insulator, or conductive silicon carbide can be used, but the crystal growth technique using the latter has not been sufficiently established.

【０００３】したがって、これまで、窒化物系化合物半
導体の発光ダイオード（ＬＥＤ）用基板にはサァイアが
広く用いられている。しかし、サファイア基板を用いた
ＬＥＤ装置においては、上述したようにサファイアは絶
縁体であるため、ＬＥＤ素子から導電性リードフレーム
等の外部端子への電気的接続方法が、導電性材料を基板
として用いるＬＥＤ装置の場合とは異なる。Therefore, up to now, sire has been widely used as a substrate for a light emitting diode (LED) of a nitride compound semiconductor. However, in the LED device using the sapphire substrate, since sapphire is an insulator as described above, the electrical connection method from the LED element to the external terminal such as the conductive lead frame uses the conductive material as the substrate. Unlike the case of LED devices.

【０００４】以下に、従来のサファイア基板を用いた窒
化物系化合物半導体ＬＥＤ装置を製造する工程を図８を
用いて説明する。A process of manufacturing a nitride compound semiconductor LED device using a conventional sapphire substrate will be described below with reference to FIG.

【０００５】まず、図８（ａ）に示す第１工程では、サ
ファイア基板１０１上に、ＭＯＶＰＥ法（有機金属気相
エピタキシャル法）等の結晶成長法により、ｎ型ＧａＮ
層１０２とｐ型ＧａＮ層１０３を順次形成する。First, in a first step shown in FIG. 8A, n-type GaN is formed on a sapphire substrate 101 by a crystal growth method such as MOVPE (metal organic chemical vapor deposition).
The layer 102 and the p-type GaN layer 103 are sequentially formed.

【０００６】次に、図８（ｂ）に示す第２工程では、ｐ
型ＧａＮ層１０３表面上の所定領域をフォトレジスト１
０４により被覆し、被覆されていない領域をｎ型ＧａＮ
層１０２表面が露出するまで、エッチングによりｐ型Ｇ
ａＮ層１０３を除去する。Next, in the second step shown in FIG. 8B, p
Of a predetermined region on the surface of the GaN layer 103 of the photoresist 1
04 coated with n-type GaN
P-type G is formed by etching until the surface of the layer 102 is exposed.
The aN layer 103 is removed.

【０００７】その後、図８（ｃ）に示す第３工程では、
前記フォトレジスト１０４を除去した後に、ｐ型ＧａＮ
層１０２およびｎ型ＧａＮ層１０３表面上に、それぞれ
ｎ型側電極１０５、およびｐ型側電極１０６を形成す
る。Then, in the third step shown in FIG.
After removing the photoresist 104, p-type GaN
An n-type side electrode 105 and a p-type side electrode 106 are formed on the surfaces of the layer 102 and the n-type GaN layer 103, respectively.

【０００８】さらに、図８（ｄ）に示す第４工程では、
上記一対の電極１０５、１０６が含まれるようにサファ
イア基板１０１ごと機械的に切断し、ＬＥＤチップ１０
７を作製する。Further, in the fourth step shown in FIG. 8 (d),
The LED chip 10 is mechanically cut together with the sapphire substrate 101 so as to include the pair of electrodes 105 and 106.
7 is produced.

【０００９】最後に、図８（ｅ）に示す第５工程では、
ＬＥＤチップ１０７のサファイア基板１０１の下面側を
導電性リードフレーム（導電性支持体）１０８に固着
し、上記電極１０５、１０６とリードフレーム１０８、
１０９をそれぞれワイヤ１１０、１１１により電気的に
接続する。Finally, in the fifth step shown in FIG. 8 (e),
The lower surface side of the sapphire substrate 101 of the LED chip 107 is fixed to a conductive lead frame (conductive support) 108, and the electrodes 105 and 106 and the lead frame 108,
109 are electrically connected by wires 110 and 111, respectively.

【００１０】図９に、上記ＬＥＤチップ１０７の両電極
１０５、１０６間に電流を流したときの発光の様子を示
す。この装置では、ｎ型ＧａＮ層１０２とｐ型ＧａＮ層
１０３との接合界面近傍（発光領域）で発生した光の一
部が両電極１０５、１０６により遮断されるため、ＬＥ
Ｄチップ１０７から外部への光取り出し効率が低下す
る。FIG. 9 shows how light is emitted when a current is passed between the electrodes 105 and 106 of the LED chip 107. In this device, both electrodes 105 and 106 block part of the light generated in the vicinity of the junction interface between the n-type GaN layer 102 and the p-type GaN layer 103 (light emitting region).
The light extraction efficiency from the D chip 107 to the outside is reduced.

【００１１】この問題を解決することを目的として、例
えば、下記の２方法が提案されている。For the purpose of solving this problem, for example, the following two methods have been proposed.

【００１２】第１の方法は、ＬＥＤチップのｐ型最上層
上に透光性の電極を形成し、該電極上の隅部に形成され
たワイヤボンディング用電極と前記ＬＥＤチップが載置
された導電性リードフレームをワイヤボンディングによ
り電気的に接続する方法である（特開平６−３３８６３
２号公報（Ｈ０１Ｌ ３３／００））。In the first method, a transparent electrode is formed on the p-type uppermost layer of the LED chip, and the wire bonding electrode formed in the corner on the electrode and the LED chip are mounted. This is a method of electrically connecting conductive lead frames by wire bonding (Japanese Patent Laid-Open No. 6-33863).
No. 2 (H01L 33/00)).

【００１３】第２の方法では、図１０に示すように、Ｌ
ＥＤチップ１１２は周辺部が中央に比して薄いサファイ
ア基板１１３上にｎ型ＧａＮ層１１４とｐ型ＧａＮ層１
１５がこの順序に形成され、基板１１３の前記周辺部上
のｎ型ＧａＮ層１１４上にｎ型側電極１１６、ｐ型Ｇａ
Ｎ層１１５上にｐ型側電極１１７を備える。In the second method, as shown in FIG.
The ED chip 112 has an n-type GaN layer 114 and a p-type GaN layer 1 on a sapphire substrate 113 whose peripheral portion is thinner than the center.
15 are formed in this order, and the n-type side electrode 116 and the p-type Ga are formed on the n-type GaN layer 114 on the peripheral portion of the substrate 113.
A p-type side electrode 117 is provided on the N layer 115.

【００１４】このＬＥＤチップ１１２は一方の導電性リ
ードフレーム１１８に導電性樹脂１１９により固着され
ると共に、この導電性樹脂１１９によりｎ型側電極１１
６と導電性リードフレーム１１８とが電気的に接続され
る。また、ｐ型側電極１１７と他方の導電性リードフレ
ーム１２０とは、ワイヤ１２１により、電気的に接続さ
れる（特開平６−２６８２５８号公報（Ｈ０１Ｌ３３／
００））。The LED chip 112 is fixed to one of the conductive lead frames 118 by a conductive resin 119, and the conductive resin 119 also fixes the n-type side electrode 11.
6 and the conductive lead frame 118 are electrically connected. The p-type side electrode 117 and the other conductive lead frame 120 are electrically connected by a wire 121 (Japanese Patent Laid-Open No. 6-268258 (H01L33 /
00)).

【００１５】この方法では、ワイヤボンディングの数を
減らすことができ、導電性樹脂を用いた電気的接続によ
り、接続に必要な電極面積は、ワイヤボンディングの場
合に比して小さくできるため、ＬＥＤチップ１１２から
外部への光取り出し効率が向上する。According to this method, the number of wire bonds can be reduced, and the electrode area required for the connection can be made smaller than that in the case of wire bonding because of the electrical connection using the conductive resin. The light extraction efficiency from 112 to the outside is improved.

【００１６】[0016]

【発明が解決しようとする課題】しかしながら、上記第
１の方法では、透光性の電極部分では光を透過するが、
ワイヤボンディングは行うので、ワイヤボンディング用
の電極あるいはワイヤボンディングの際に形成されるワ
イヤ先端部のボールによる光の遮断は免れない。また、
ワイヤボンディングをＬＥＤチップの隅部に行うので、
このボンディング時の荷重がＬＥＤチップに対して不均
一にかかり、ＬＥＤチップが導電性リードフレームから
離脱する場合があった。これは、装置の製造歩留まりの
低下を招く。However, in the above first method, light is transmitted through the transparent electrode portion,
Since the wire bonding is performed, it is inevitable that the electrode for wire bonding or the ball at the tip of the wire formed at the time of wire bonding blocks light. Also,
Since wire bonding is performed on the corner of the LED chip,
The load at the time of this bonding was applied non-uniformly to the LED chip, and the LED chip sometimes separated from the conductive lead frame. This causes a decrease in the manufacturing yield of the device.

【００１７】一方、上記第２の方法では、図１０に例示
するように、ＬＥＤチップ１１２をリードフレーム１１
８に導電性樹脂１１９により接着する際に、その押圧に
より延出される導電性樹脂１１９により、ｎ型側電極１
１６とリードフレーム１１８とを電気的に接続させる。On the other hand, in the second method, the LED chip 112 is mounted on the lead frame 11 as illustrated in FIG.
8 is bonded by the conductive resin 119 to the n-type side electrode 1 by the conductive resin 119 extended by the pressing.
16 and the lead frame 118 are electrically connected.

【００１８】しかし、この方法では、導電性樹脂１１９
の延出方向は制御されていないため、リードフレーム１
１８上にあらかじめ塗布しておく導電性樹脂１１９の量
を最適化しても、該樹脂１１９のリードフレーム１１８
上における位置、ＬＥＤチップ１１２のリードフレーム
１１８への接着時の両者のなす角度（ＬＥＤチップ１１
２の傾き角）等により、ＬＥＤチップ１１２周辺の不特
定な領域で導電性樹脂１１９の不所望な延出が生じてし
まう。この結果、導電性樹脂１１９の延出がｐ型側電極
１１７にまで及び、ｐ型側電極１１７とｎ型側電極１１
６間が短絡されＬＥＤとして動作しなくなる恐れがあっ
た。However, in this method, the conductive resin 119 is used.
Since the extension direction of the lead frame is not controlled,
Even if the amount of the conductive resin 119 to be pre-coated on the resin 18 is optimized, the lead frame 118 of the resin 119 is
The upper position and the angle formed by the two when the LED chip 112 is bonded to the lead frame 118 (LED chip 11
The inclination angle of 2) or the like causes the conductive resin 119 to undesirably extend in an unspecified area around the LED chip 112. As a result, the conductive resin 119 extends to the p-type side electrode 117, and the p-type side electrode 117 and the n-type side electrode 11 are extended.
There is a possibility that 6 will be short-circuited and will not operate as an LED.

【００１９】本発明の目的は、光取り出し方向に電極を
備えるＬＥＤ装置等の発光装置の外部への光取り出し効
率を向上するための上記課題を解決し、歩留まり良く製
造可能な発光装置及びその製造方法を提供することにあ
る。An object of the present invention is to solve the above problems for improving the efficiency of extracting light to the outside of a light emitting device such as an LED device having an electrode in the light extracting direction, and a light emitting device which can be manufactured with a high yield, and a manufacturing method thereof. To provide a method.

【００２０】[0020]

【課題を解決するための手段】本発明の発光装置は、基
板上に形成された一導電型の半導体層上に電極を備えた
発光素子と、該発光素子を載置する有底で且つ内壁を有
する導電性支持体と、を備えた装置であって、前記電極
と前記内壁が近接且つ対向するように前記発光素子が前
記底に固着されるとともに、前記電極と導電性支持体の
内壁が導電性樹脂にて電気的に接続されたことを特徴と
する。A light emitting device of the present invention comprises a light emitting element having an electrode on a semiconductor layer of one conductivity type formed on a substrate, and a bottomed inner wall for mounting the light emitting element. And a conductive support having, wherein the light emitting element is fixed to the bottom so that the electrode and the inner wall are close and face each other, and the electrode and the inner wall of the conductive support are It is characterized by being electrically connected by a conductive resin.

【００２１】また、発明の発光装置は、基板上に形成さ
れた一導電型の半導体層上に電極を備えた発光素子と、
該発光素子を載置する有底で且つ少なくとも一部に突出
部を備えた内壁を有する導電性支持体と、を備えた装置
であって、前記電極と前記突起部の先端部とが近接且つ
対向するように前記発光素子が前記底に固着されるとも
に、前記電極と前記導電性支持体の突起部が導電性樹脂
にて電気的に接続されたことを特徴とする。Further, the light emitting device of the present invention includes a light emitting element having an electrode on a semiconductor layer of one conductivity type formed on a substrate,
A device having a bottomed bottom on which the light emitting element is mounted and a conductive support having an inner wall having at least a part of a protrusion, wherein the electrode and the tip of the protrusion are close to each other. The light emitting element is fixed to the bottom so as to face each other, and the electrode and the projection of the conductive support are electrically connected by a conductive resin.

【００２２】特に、前記導電性樹脂は、前記電極から、
前記発光素子と前記内壁との間隙、及び、前記発光素子
と前記底との間隙に連なって介在していることを特徴と
する。In particular, the conductive resin is
It is characterized in that the light emitting element and the inner wall and the gap between the light emitting element and the bottom are connected in series.

【００２３】更に、前記発光素子は基板裏面にストライ
プ状の溝を有し、該溝の延在方向が前記対向方向に沿う
ことを特徴とする。Further, the light emitting element has a stripe-shaped groove on the back surface of the substrate, and the extending direction of the groove is along the facing direction.

【００２４】また、本発明の発光装置の製造方法は、前
記導電性支持体の底に前記導電性樹脂を滴下する工程
と、前記発光素子を前記底に滴下させた導電性樹脂上に
押圧接着するとともに、該押圧により前記導電性樹脂を
前記発光素子と前記導電性支持体との間隙に連なって延
出させ、延出させた前記導電性樹脂により前記電極と前
記導電性支持体とを電気的に接続する工程と、を備える
ことを特徴とする。Further, in the method for manufacturing a light emitting device of the present invention, the step of dropping the conductive resin on the bottom of the conductive support, and the pressure bonding of the light emitting element on the conductive resin dropped on the bottom. In addition, the pressing causes the conductive resin to continuously extend in the gap between the light emitting element and the conductive support, and the extended conductive resin electrically connects the electrode and the conductive support. And a step of electrically connecting them.

【００２５】更に、本発明の発光装置の製造方法は、前
記導電性支持体の内壁と前記電極とを近接且つ対向する
ように前記発光素子を前記導電性支持体の底に固着する
工程と、前記電極と該電極に近接配置させた前記導電性
支持体の内壁に連なって前記導電性を滴下することによ
り前記電極と前記導電性支持体とを電気的に接続する工
程と、を備えることを特徴とする。Further, in the method for manufacturing a light emitting device of the present invention, a step of fixing the light emitting element to the bottom of the conductive support so that the inner wall of the conductive support and the electrode are in close proximity and face each other, Electrically connecting the electrode and the conductive support by dripping the conductivity in series with the inner wall of the conductive support that is disposed in the vicinity of the electrode. Characterize.

【００２６】[0026]

【発明の実施の形態】以下に、本発明に依る実施形態１
〜３および参考形態１を詳述する。BEST MODE FOR CARRYING OUT THE INVENTION Embodiment 1 according to the present invention will be described below.
3 and Reference Embodiment 1 will be described in detail.

【００２７】［参考形態１］ 図１は、第１の参考形態に係わるＧａＮ系青色ＬＥＤ装
置の模式断面図である。 Reference Embodiment 1 FIG. 1 is a schematic sectional view of a GaN-based blue LED device according to the first reference embodiment.

【００２８】図１中、１は、上面０．４ｍｍ角のＬＥＤ
チップであり、以下のように構成されている。２は厚さ
１５０μｍのサファイア基板、３は基板２上に形成され
た層厚１μｍのｎ型ＧａＮバッファ層、４はバッファ層
３上に形成された層厚０．２μｍのｎ型ＩｎＧａＮ活性
層、５は活性層４上に形成された層厚０．５μｍのｐ型
ＡｌＧａＮクラッド層、６はクラッド層５上に形成され
た層厚０．５μｍのｐ型ＧａＮコンタクト層、及び７は
ｎ型バッファ層３が露出するように、ｐ型コンタクト層
６からｎ型バッファ層３の層中の所定位置に至って除去
されてなるｎ型側電極形成領域である。In FIG. 1, reference numeral 1 is an LED having an upper surface of 0.4 mm square.
It is a chip and is configured as follows. Reference numeral 2 is a sapphire substrate having a thickness of 150 μm, 3 is an n-type GaN buffer layer having a layer thickness of 1 μm formed on the substrate 2, 4 is an n-type InGaN active layer having a layer thickness of 0.2 μm formed on the buffer layer 3, Reference numeral 5 is a p-type AlGaN cladding layer having a layer thickness of 0.5 μm formed on the active layer 4, 6 is a p-type GaN contact layer having a layer thickness of 0.5 μm formed on the cladding layer 5, and 7 is an n-type buffer. An n-type side electrode formation region is formed by removing from the p-type contact layer 6 to a predetermined position in the layer of the n-type buffer layer 3 so that the layer 3 is exposed.

【００２９】８はｎ型側電極形成領域７上に形成された
上面０．０５ｍｍ×０．２ｍｍ角のＡｌからなるｎ極側
電極、９はｐ型ＧａＮコンタクト層６の上の一部に形成
されたＡｕからなる上面０．２ｍｍφのｐ型側電極であ
る。ここで、ｎ型側電極８の面積を小さく設定するの
は、外部への光り取り出し効率を向上させるためであ
る。Reference numeral 8 is an n-pole side electrode made of Al and having an upper surface of 0.05 mm × 0.2 mm square formed on the n-type side electrode forming region 7, and 9 is formed on a part of the p-type GaN contact layer 6. It is a p-type side electrode having a top surface of 0.2 mm and made of Au. Here, the reason why the area of the n-type side electrode 8 is set small is to improve the efficiency of extracting light to the outside.

【００３０】上記半導体各層３〜６は、ｎ型ド−パント
にはＳｉ、ｐ型ド−パントにはＭｇを用い、ＭＯＶＰＥ
法により形成される。In each of the semiconductor layers 3 to 6, Si is used for the n-type dopant and Mg is used for the p-type dopant, and MOVPE is used.
Formed by the method.

【００３１】１０はＬＥＤチップ１を載置し、これと電
気的に接続をするためのＡｌからなる一方のリードフレ
ーム（導電性支持体）であり、該リードフレーム１０は
１ｍｍφの底１１と、これと内角１７０°で交わる高さ
約０．２ｍｍの内壁１２を有する皿部１３と、該皿部１
３を支持する支持部１４からなる。Reference numeral 10 denotes one lead frame (conductive support) made of Al for mounting the LED chip 1 thereon and electrically connecting the LED chip 1. The lead frame 10 has a bottom 11 having a diameter of 1 mm. A dish portion 13 having an inner wall 12 having a height of about 0.2 mm which intersects with this at an interior angle of 170 °, and the dish portion 1
It comprises a support portion 14 for supporting 3.

【００３２】１５は、ＬＥＤチップ１をリードフレーム
１０に固着するとともに、ｎ型側電極８とリードフレー
ム１０とを電気的に接続するための導電性樹脂であり、
該樹脂１５としてＡｇを含有するエポキシ系樹脂が使用
される。１６は、ｐ型側電極９と他方のリードフレーム
１７とをワイヤボンディングにより電気的に接続するた
めのＡｕ等の導電性ワイヤである。Reference numeral 15 is a conductive resin for fixing the LED chip 1 to the lead frame 10 and electrically connecting the n-type side electrode 8 and the lead frame 10.
An epoxy resin containing Ag is used as the resin 15. Reference numeral 16 is a conductive wire such as Au for electrically connecting the p-type side electrode 9 and the other lead frame 17 by wire bonding.

【００３３】図２は、図１で示したＬＥＤチップ１のリ
ードフレーム１０の底１１における固着位置を詳細に説
明するための模式上面図である。FIG. 2 is a schematic top view for explaining the fixing position of the LED chip 1 shown in FIG. 1 on the bottom 11 of the lead frame 10 in detail.

【００３４】ＬＥＤチップ１は、ｎ型側電極８側の側面
１８ａがリードフレーム内壁１２に近接するように設置
される。この配置により、ＬＥＤチップ１のｎ型側電極
８側の側面１８ａとリードフレーム内壁１２との距離
を、ＬＥＤチップ１の他の側面１８ｂ、１８ｃ、および
１８ｄとリードフレーム内壁１２とのそれぞれの距離よ
り小さくできる。The LED chip 1 is installed so that the side surface 18a on the n-type side electrode 8 side is close to the inner wall 12 of the lead frame. With this arrangement, the distance between the side surface 18a of the LED chip 1 on the n-type side electrode 8 side and the lead frame inner wall 12 is set to be the same as the distance between the other side surfaces 18b, 18c, and 18d of the LED chip 1 and the lead frame inner wall 12. Can be smaller.

【００３５】このＬＥＤチップ１のリードフレーム１０
への接着は、リードフレームの底１１上の底中心１９か
ら半径方向に約０．２ｍｍ離れた位置に導電性樹脂１５
を約０．０４ｍｍ3滴下し、この直上にＬＥＤチップ１
のチップ中心２０を一致させるように載置されることに
より行われる。The lead frame 10 of this LED chip 1
Adhesion to the conductive resin 15 is carried out on the bottom 11 of the lead frame at a position approximately 0.2 mm away from the center 19 of the lead frame in the radial direction.
Approximately 0.04 mm 3 is dripped and LED chip 1
It is performed by placing the chips so that the chip centers 20 thereof are aligned with each other.

【００３６】この載置の際に、ＬＥＤチップ１のリード
フレーム１０への接着時の押圧によって、前記リードフ
レーム１０の底１１上に滴下された導電性樹脂１５がｎ
型側電極８に至るまで延出する。尚、接着には、自動ダ
イボンダ−を使用するので、位置決め精度は±１μｍ以
下である。During this mounting, the conductive resin 15 dripping on the bottom 11 of the lead frame 10 is n by the pressure when the LED chip 1 is bonded to the lead frame 10.
It extends to the mold side electrode 8. Since an automatic die bonder is used for bonding, the positioning accuracy is ± 1 μm or less.

【００３７】その後、導電性樹脂１５は、前記接着後所
定時間経過することにより固化し、ＬＥＤチップ１はリ
ードフレーム１０に固着されるとともに、ｎ型側電極８
とリードフレーム１０が電気的に接続される。After that, the conductive resin 15 is solidified by a predetermined time after the adhesion, the LED chip 1 is fixed to the lead frame 10, and the n-type side electrode 8 is formed.
And the lead frame 10 are electrically connected.

【００３８】本参考形態では、リードフレーム１０と導
電性樹脂１５により電気的に接続されるｎ型側電極８を
リードフレーム内壁１２に近接配置するので、ＬＥＤチ
ップ１の側面１８ａとリードフレーム内壁１２との狭い
間隙が、導電性樹脂１５の流動路となって、導電性樹脂
１５はｎ型側電極８側に選択的に延出するように制御で
きる。したがって、所定量の導電性樹脂１５をリードフ
レーム１０の底１１上に滴下しておくことにより、該樹
脂１５の延出がｐ型側電極９にまで及ぶことなく、リー
ドフレーム１０とｎ型側電極８との安定した電気的接続
が実現される。この結果、歩留まり良くＬＥＤ装置を製
造できる。[0038] In this reference embodiment, since the arranged close n-type-side electrode 8 are electrically connected by the lead frame 10 and the conductive resin 15 in the lead frame inner wall 12, the side surface 18a of the LED chip 1 and the lead frame inner wall 12 The narrow gap between and serves as a flow path for the conductive resin 15, and the conductive resin 15 can be controlled so as to selectively extend to the n-type side electrode 8 side. Therefore, by dropping a predetermined amount of the conductive resin 15 on the bottom 11 of the lead frame 10, the extension of the resin 15 does not extend to the p-type side electrode 9, and the lead frame 10 and the n-type side are prevented. A stable electrical connection with the electrode 8 is realized. As a result, the LED device can be manufactured with good yield.

【００３９】また、従来のように、ワイヤボンディング
を行う場合には、ワイヤ先端部にワイヤの直径よりも大
きなボールが形成されるために、ＬＥＤチップ１上のｎ
型側電極８の面積をこのボ−ルと同程度に大きくする必
要があるが、本参考形態のＬＥＤチップ１のｎ型側電極
８は、ワイヤボンディングではなく導電性樹脂１５によ
りリードフレーム１０と接続されるので、ｎ型側電極８
の面積を小さくできる。この結果、光取り出し効率が高
まる。Further, when wire bonding is performed as in the conventional case, since a ball larger than the diameter of the wire is formed at the tip of the wire, n on the LED chip 1 is formed.
It is necessary to make the area of the mold side electrode 8 as large as this ball, but the n-type side electrode 8 of the LED chip 1 of the present reference embodiment is connected to the lead frame 10 by the conductive resin 15 instead of wire bonding. N-type side electrode 8 because it is connected
Area can be reduced. As a result, the light extraction efficiency is increased.

【００４０】加えて、従来のように、ＬＥＤチップ１上
の隅部に形成されたｎ型側電極８にワイヤボンディング
を行う場合には、ＬＥＤチップ１に不均一な荷重がかか
るために、該チップ１が載置されるべきリードフレーム
１０から離脱することがあるが、導電性樹脂１５により
前記隅部に形成されたｎ型側電極８とリードフレーム１
０とを接続する場合には、このようなＬＥＤチップ１の
リードフレーム１０からの離脱は生じない。したがっ
て、製造歩留まりが向上する。In addition, when wire bonding is performed on the n-type side electrodes 8 formed at the corners of the LED chip 1 as in the conventional case, since the LED chip 1 is unevenly loaded, The chip 1 may be detached from the lead frame 10 on which the chip 1 is to be mounted, but the n-type side electrode 8 formed in the corner by the conductive resin 15 and the lead frame 1
In the case of connecting with 0, such detachment of the LED chip 1 from the lead frame 10 does not occur. Therefore, the manufacturing yield is improved.

【００４１】［実施形態１］ 本発明の第１の実施形態に係わるＧａＮ系青色ＬＥＤ装
置を模式斜視図である図３および模式断面図である図４
を用いて説明する。尚、本実施形態が参考形態１と異な
る点は、リードフレーム形状及びチップ位置であり、参
考形態１と同じ部分又は対応する部分は同一の符号を付
して説明を割愛する。[Embodiment 1 ] FIG. 3 is a schematic perspective view and FIG. 4 is a schematic sectional view of a GaN-based blue LED device according to a first embodiment of the present invention.
Will be explained. Note that the present embodiment is Reference Embodiment 1 is different from a lead frame shape and chip position, ginseng
The same reference numerals are given to the same or corresponding portions as those in Consideration 1, and the description thereof will be omitted.

【００４２】図３および図４中、２１はＬＥＤチップ１
を載置するとともに、ｎ型側電極８と電気的に接続する
ためのＡｌからなる一方の導電性リードフレーム（導電
性支持体）であり、該リードフレーム２１は１ｍｍφの
底２２と、該底２２の中心に向かって長さ０．２ｍｍ突
出する突起部２３を備える高さ約０．２ｍｍの内壁２４
を有する皿部２５と、該皿部を支持する支持部２６とか
らなる。尚、内壁２４は、内壁２４の一部を構成する突
起部２３の側壁２３ａ、ｂ、ｃが底２２に対して直角で
ある以外は、底２２との成す角は１７０°である。In FIG. 3 and FIG. 4, 21 is the LED chip 1.
Is one conductive lead frame (conductive support) made of Al for electrically connecting to the n-type side electrode 8, and the lead frame 21 has a bottom 22 having a diameter of 1 mm and a bottom. An inner wall 24 having a height of about 0.2 mm and provided with a protrusion 23 protruding by 0.2 mm in length toward the center of 22.
And a support portion 26 that supports the dish portion. The inner wall 24 forms an angle of 170 ° with the bottom 22 except that the side walls 23a, 23b, 23c of the protrusion 23 forming a part of the inner wall 24 are perpendicular to the bottom 22.

【００４３】ＬＥＤチップ１は、該チップのｎ型側電極
８が突起部２３の先端側側壁２３ａに近接するように、
リードフレーム底２２上に導電性樹脂１５を用いて固着
されるとともに、ｎ型側電極８と突起部２３の先端側側
壁２３ａの間に介在する導電性樹脂１５によりｎ型側電
極８とリードフレーム２１が電気的に接続されている。
２７は、ｐ型側電極９とＡｌからなる他方の導電性リー
ドフレーム２８とをワイヤボンディングにより電気的に
接続するためのＡｕ等の導電性ワイヤである。The LED chip 1 is arranged so that the n-type side electrode 8 of the LED chip 1 is close to the tip side wall 23a of the protrusion 23.
The conductive resin 15 is fixed on the lead frame bottom 22, and the conductive resin 15 interposed between the n-type side electrode 8 and the tip side wall 23a of the protrusion 23 allows the n-type side electrode 8 and the lead frame to be connected. 21 is electrically connected.
Reference numeral 27 denotes a conductive wire such as Au for electrically connecting the p-type side electrode 9 and the other conductive lead frame 28 made of Al by wire bonding.

【００４４】図４は、ＬＥＤチップ１のリードフレーム
の底２２における固着位置を詳細に説明するためのもの
で、図３の点線Ａ−Ａに沿った断面図に対応する。本実
施形態においては、０．４ｍｍ角のＬＥＤチップ１は、
チップ底面３０内における対称中心であるチップ中心３
１とリードフレーム底中心２９が一致し、かつ、ｎ型側
電極８が突起部２３の側壁２３ａに近接するように固着
されている。FIG. 4 is for explaining in detail the fixing position on the bottom 22 of the lead frame of the LED chip 1, and corresponds to the sectional view taken along the dotted line AA in FIG. In the present embodiment, the 0.4 mm square LED chip 1 is
Chip center 3 which is the center of symmetry in the bottom surface 30 of the chip
1 and the lead frame bottom center 29 are aligned, and the n-type side electrode 8 is fixed so as to be close to the side wall 23a of the protrusion 23.

【００４５】本実施形態では、リードフレーム２１の内
壁２４に突起部２３を設け、該突起部２３の先端側側壁
２３ａとＬＥＤチップ１のｎ型側電極８を近接配置する
ので、突起部２３の側壁２３ａとＬＥＤチップ１のｎ型
側電極８側側面との狭い間隙が、ＬＥＤチップ１のリー
ドフレーム２１への接着時の押圧により延出する導電性
樹脂１５の流動路となって、導電性樹脂１５はｎ型側電
極８側に選択的に延出するように制御できる。したがっ
て、所定量の導電性樹脂１５をリードフレーム２１の底
２２に滴下しておくことにより、該樹脂１５の延出がｐ
型側電極９にまで及ぶことなく、リードフレーム２１と
ｎ型側電極８との安定した電気的接続が実現される。こ
の結果、歩留まり良くＬＥＤ装置を製造できる。In the present embodiment, the protrusion 23 is provided on the inner wall 24 of the lead frame 21, and the side wall 23a on the tip end side of the protrusion 23 and the n-type side electrode 8 of the LED chip 1 are arranged close to each other. The narrow gap between the side wall 23a and the side surface of the LED chip 1 on the side of the n-type side electrode 8 serves as a flow path for the conductive resin 15 which is extended by the pressure applied when the LED chip 1 is bonded to the lead frame 21, and thus becomes conductive. The resin 15 can be controlled so as to selectively extend to the n-type side electrode 8 side. Therefore, by dropping a predetermined amount of the conductive resin 15 on the bottom 22 of the lead frame 21, the extension of the resin 15 is reduced by p.
Stable electrical connection between the lead frame 21 and the n-type side electrode 8 is realized without reaching the mold side electrode 9. As a result, the LED device can be manufactured with good yield.

【００４６】また、本実施形態のＬＥＤチップ１のｎ型
側電極８は、ワイヤボンディングではなく導電性樹脂１
５によりリードフレーム２１と接続されるので、参考形
態１と同様にｎ型側電極８の面積を小さくでき、且つ、
この接続によりリードフレーム２１からＬＥＤチップ１
が離脱することはない。この結果、光取り出し効率及び
装置製造歩留まりが高まる。Further, the n-type side electrode 8 of the LED chip 1 of this embodiment is not the wire bonding but the conductive resin 1
Since it is connected to the lead frame 21 by 5, the area of the n-type side electrode 8 can be reduced as in the reference mode 1, and
By this connection, the lead frame 21 is connected to the LED chip 1
Will never leave. As a result, the light extraction efficiency and the device manufacturing yield are increased.

【００４７】加えて、本実施形態では、ＬＥＤチップ１
をリードフレーム２１の底２２のほぼ中央に配置できる
ので、ＬＥＤチップ１から出射した光がリードフレーム
２１の内壁２４により均一に反射され、光の取り出しが
均一化される。In addition, in this embodiment, the LED chip 1
Can be arranged substantially in the center of the bottom 22 of the lead frame 21, so that the light emitted from the LED chip 1 is uniformly reflected by the inner wall 24 of the lead frame 21, and the light extraction is made uniform.

【００４８】［実施形態２］ 図５は、本発明の第２の実施形態に係わるＧａＮ系青色
ＬＥＤ装置の模式斜視図であり、図６は、図５の点線Ｂ
−Ｂに沿った断面図に対応する。尚、本実施形態が実施
形態１と異なる部分は、ＬＥＤチップの底面にストライ
プ状の溝を設けた点であり、実施形態１と同じ部分又は
対応する部分は同一の符号を付して説明を割愛する。[ Second Embodiment] FIG. 5 is a schematic perspective view of a GaN-based blue LED device according to a second embodiment of the present invention, and FIG. 6 is a dotted line B in FIG.
Corresponds to the cross-sectional view along -B. The portion to which the present embodiment is different from the embodiment 1 is the point in which a stripe-shaped grooves in the bottom surface of the LED chip, a portion same parts or corresponding with the first embodiment denoted by identical numerals and their description is Omit.

【００４９】図５および図６中、４１はＬＥＤチップで
あり、実施形態１で用いたものと同一構造のＬＥＤチッ
プの基板裏面４２に幅０．１５ｍｍ、深さ０．０５ｍｍ
でチップ４１の一端から他端に及ぶ長さ０．４ｍｍのス
トライプ状のチップ底溝４３を有する。5 and 6, reference numeral 41 denotes an LED chip, which has a width of 0.15 mm and a depth of 0.05 mm on the back surface 42 of the substrate of the LED chip having the same structure as that used in the first embodiment.
Has a strip-shaped chip bottom groove 43 having a length of 0.4 mm extending from one end to the other end of the chip 41.

【００５０】実施形態１と同様に、ＬＥＤチップ４１の
ｎ型側電極８とリードフレーム２１の内壁２４からの突
起部２３の先端側側壁２３ａが近接するように、ＬＥＤ
チップ４１は導電性樹脂１５を用いてリードフレーム２
１に固着されるとともに、ＬＥＤチップ４１上に形成さ
れたｎ型側電極８とリードフレーム２１が電気的に接続
される。Similar to the first embodiment, the LED is arranged so that the n-type side electrode 8 of the LED chip 41 and the tip side wall 23a of the projection 23 from the inner wall 24 of the lead frame 21 are close to each other.
The chip 41 uses the conductive resin 15 to form the lead frame 2
While being fixed to No. 1, the n-type side electrode 8 formed on the LED chip 41 and the lead frame 21 are electrically connected.

【００５１】ここで、ＬＥＤチップ４１のチップ底溝４
３が延在する方向（図５の左右方向）とリードフレーム
２１の突起部２３の突出方向が一致するように、ＬＥＤ
チップ４１をリードフレーム２１の底２２に接着する。
この結果、図６に示すように、ＬＥＤチップ４１の基板
裏面４２にチップ底溝４３が存在するために、導電性樹
脂１５が前記溝４３内に閉じ込められ、図中左右方向へ
の延出が制限されつつ突起部２３の突出方向に流れが制
御される。Here, the chip bottom groove 4 of the LED chip 41 is used.
3 so that the direction in which 3 extends (the left-right direction in FIG. 5) and the projecting direction of the projecting portion 23 of the lead frame 21 match.
The chip 41 is bonded to the bottom 22 of the lead frame 21.
As a result, as shown in FIG. 6, since the chip bottom groove 43 exists on the back surface 42 of the substrate of the LED chip 41, the conductive resin 15 is confined in the groove 43, and the lateral extension in the drawing occurs. The flow is controlled in the protruding direction of the protruding portion 23 while being restricted.

【００５２】このように、チップ底溝４３が導電性樹脂
１５を導く流動路になるので、導電性樹脂１５はこれに
続く流動路として機能するＬＥＤチップ４１のｎ型側電
極８側側面と内壁２４からの突起部２３の先端側側壁２
３ａとの狭い間隙に導かれ、該導電性樹脂１５の延出が
より選択的に制御される。In this way, the chip bottom groove 43 serves as a flow path for guiding the conductive resin 15. Therefore, the conductive resin 15 functions as a flow path subsequent to the conductive resin 15, and the side surface and the inner wall of the LED chip 41 on the n-type side electrode 8 side. The side wall 2 on the tip side of the protrusion 23 from 24
It is guided to a narrow gap with 3a, and the extension of the conductive resin 15 is more selectively controlled.

【００５３】したがって、本実施形態では、リードフレ
ーム２１の内壁２４に設けられた突起部２３の先端側側
壁２３ａとＬＥＤチップ４１のｎ型側電極８を近接配置
し、かつ、ＬＥＤチップ４１の基板裏面４２に導電性樹
脂１５を突起部２３の先端側側壁２３ａ側へ導く流動路
となるチップ底溝４３を設けるので、実施形態１に比べ
て、導電性樹脂１５によるリードフレーム２１とｎ型側
電極８とのより安定した電気的接続が実現される。加え
て、前記電気的接続に必要な導電性樹脂１５の量が、実
施形態１の約６０％に低減される。Therefore, in the present embodiment, the tip side wall 23a of the projection 23 provided on the inner wall 24 of the lead frame 21 and the n-type side electrode 8 of the LED chip 41 are arranged close to each other, and the substrate of the LED chip 41 is arranged. Since the chip bottom groove 43 serving as a flow path for guiding the conductive resin 15 to the tip side wall 23a side of the protrusion 23 is provided on the back surface 42, the lead frame 21 and the n-type side formed of the conductive resin 15 are different from those of the first embodiment. A more stable electrical connection with the electrode 8 is realized. In addition, the amount of conductive resin 15 required for the electrical connection is reduced to about 60% of that of the first embodiment.

【００５４】また、本実施形態のＬＥＤチップ４１のｎ
型側電極８は、ワイヤボンディングではなく導電性樹脂
１５によりリードフレーム２１と接続されるので、実施
形態１及び参考形態１と同様に、ｎ型側電極８の面積を
小さくでき、且つ、この接続によりリードフレーム２１
からＬＥＤチップ４１が離脱することはない。この結
果、光取り出し効率、及び装置製造歩留まりが高まる。Further, n of the LED chip 41 of this embodiment is used.
Since the mold-side electrode 8 is connected to the lead frame 21 by the conductive resin 15 instead of wire bonding, the area of the n-type side electrode 8 can be reduced and the connection can be made similarly to Embodiment 1 and Reference Embodiment 1. Lead frame 21
The LED chip 41 does not come off. As a result, the light extraction efficiency and the device manufacturing yield are improved.

【００５５】更に、ＬＥＤチップ１をリードフレーム２
１の底２２のほぼ中央に配置できるので、実施形態１と
同様に、ＬＥＤチップ４１から出射した光がリードフレ
ーム２１の内壁２４により均一に反射され、光の取り出
しが均一化される。Further, the LED chip 1 is connected to the lead frame 2
Can be arranged approximately in the middle of one of the bottom 22, as in the first embodiment, light emitted from the LED chip 41 is uniformly reflected by the inner wall 24 of the lead frame 21, light extraction is made uniform.

【００５６】また、本実施形態では、上記チップ底溝４
３を有するＬＥＤチップ４１を突起部を有するリードフ
レーム２１に装着するようにしたが、参考形態１で用い
たリードフレーム１０にこのＬＥＤチップ４１を、該チ
ップ４１のｎ型側電極８とリードフレーム１０の内壁１
２とを近接配置し、かつ、ＬＥＤチップ４１の底溝４３
のストライプが伸びる方向とリードフレーム１０の底１
１の半径方向とが一致するように導電性樹脂１５により
接着するようにしても良い。この場合、リードフレーム
２１とｎ型側電極８との電気的接続が、参考形態１より
安定して行え、かつ、前記電気的接続に必要な導電性樹
脂１５の量が低減される。Further, in this embodiment, the chip bottom groove 4 is formed.
While the LED chips 41 having 3 was set to be mounted on the lead frame 21 having the protruding portion, the LED chip 41 to the lead frame 10, leads and n-type side electrode 8 of the chip 41 frames used in Reference Embodiment 1 Inner wall 1 of 10
2 and the bottom groove 43 of the LED chip 41 are arranged close to each other.
Direction of stripes and bottom of leadframe 10
The conductive resin 15 may be adhered so that the radial direction of 1 corresponds. In this case, the electrical connection between the lead frame 21 and the n-type-side electrode 8 is stable can be from reference embodiment 1, and the amount of the conductive resin 15 necessary to the electrical connections is reduced.

【００５７】［実施形態３］ 図７は、実施形態３を説明するためのＧａＮ系青色ＬＥ
Ｄの模式上面図である。尚、本実施形態が実施形態１と
異なる部分は、ＬＥＤチップのｎ型側電極形成領域の形
状、この上に形成されるｎ型側電極の形状、ＬＥＤチッ
プの配置方向、および、導電性樹脂による上記ｎ型側電
極とリードフレームとの接続方法であり、実施形態１と
同じ部分又は対応する部分は同一の符号を付して説明を
割愛する。[ Third Embodiment] FIG. 7 is a GaN blue LE for explaining the third embodiment.
It is a schematic top view of D. The portion to which the present embodiment is different from the first embodiment, the shape of the n-type-side electrode formation region of the LED chips, the shape of the n-type-side electrode formed on the arrangement direction of the LED chip, and a conductive resin by a connection between the n-type-side electrode and the lead frame, a portion same parts or corresponding with the first embodiment will be omitted the description the same reference numerals.

【００５８】図７中、５１はＬＥＤチップであり、５２
はＬＥＤチップ５１の一角部に形成された長さ０．１５
ｍｍの二直線と内に凸な円弧で囲まれたｎ型側電極形成
領域、５３は上記領域上の略全域に形成されたＡｌから
なるｎ型側電極である。In FIG. 7, 51 is an LED chip, and 52 is
Is a length of 0.15 formed at one corner of the LED chip 51.
An n-type side electrode forming region surrounded by two straight lines of mm and an inwardly convex arc, and 53 is an n-type side electrode made of Al formed over almost the entire region.

【００５９】ＬＥＤチップ５１は、ｎ型側電極５３を備
えるＬＥＤチップ５１の角部と突起部２３の先端側側壁
２３ａが近接するようにして、ＬＥＤチップ５１の下面
をリードフレーム２１の底２２の略中央に、導電性樹脂
（図示せず）により固着配置されている。尚、ここでは
導電性樹脂を用いたが、この固着はＬＥＤチップ５１と
リードフレーム２１との機械的な固定を行うためのもの
であるので、接着材は必ずしも導電性である必要はな
い。In the LED chip 51, the lower surface of the LED chip 51 is provided on the bottom 22 of the lead frame 21 so that the corners of the LED chip 51 having the n-type side electrode 53 and the tip side wall 23a of the projection 23 are close to each other. A conductive resin (not shown) is fixedly arranged at the approximate center. Although a conductive resin is used here, since the fixing is for mechanically fixing the LED chip 51 and the lead frame 21, the adhesive does not necessarily have to be conductive.

【００６０】ｎ型側電極５３とリードフレーム２１との
電気的な接続は、電極５３および突起部２３の先端部上
方側から、突起部２３とｎ型側電極５３に連なるように
導電性樹脂１５を滴下することによりなされる。The electrical connection between the n-type side electrode 53 and the lead frame 21 is made by the conductive resin 15 so that the protrusion 53 and the n-type side electrode 53 are connected to each other from the upper side of the electrode 53 and the tip of the protrusion 23. Is made by dropping.

【００６１】本実施形態では、リードフレーム２１の内
壁２４に設けた突起部２３に、ＬＥＤチップ５１のｎ型
側電極５３を近接配置するので、突起部２３とｎ型側電
極５３の対向位置上方側から少量の導電性樹脂１５を滴
下することにより、リードフレーム２１とｎ型側電極５
３との電気的接続が可能となる。この接続方法では、上
記突起部２３と上記ｎ型側電極５３の位置を観察しなが
ら、導電性樹脂の滴下位置を決定できるので、ＬＥＤチ
ップ５１のｎ型側電極５３とｐ型側電極９とを導電性樹
脂１５により短絡させることなく、リードフレーム２１
とｎ型側電極５３とを安定して電気的に接続可能であ
る。この結果、歩留まり良くＬＥＤ装置を製造できる。In the present embodiment, since the n-type side electrode 53 of the LED chip 51 is disposed close to the protrusion 23 provided on the inner wall 24 of the lead frame 21, the protrusion 23 and the n-type side electrode 53 are located above the facing position. By dropping a small amount of the conductive resin 15 from the side, the lead frame 21 and the n-type side electrode 5
It becomes possible to make an electrical connection with 3. In this connection method, since the position where the conductive resin is dropped can be determined while observing the positions of the protrusion 23 and the n-type side electrode 53, the n-type side electrode 53 and the p-type side electrode 9 of the LED chip 51 can be connected to each other. Without short-circuiting the lead frame 21 with the conductive resin 15.
And the n-type side electrode 53 can be stably and electrically connected. As a result, the LED device can be manufactured with good yield.

【００６２】また、本実施形態のＬＥＤチップ５１のｎ
型側電極５３は、ワイヤボンディングではなく導電性樹
脂１５によりリードフレーム２１と接続されるので、実
施形態１、２、及び参考形態１と同様に、ｎ型側電極５
３の面積を小さくでき、且つ、この接続によりリードフ
レーム２１からＬＥＤチップ５１が離脱することはな
い。この結果、光取り出し効率、及び装置製造歩留まり
が高まる。Further, n of the LED chip 51 of this embodiment is used.
Since the mold-side electrode 53 is connected to the lead frame 21 by the conductive resin 15 instead of wire bonding, the n-type side electrode 5 is the same as in the first and second embodiments and the reference embodiment 1.
The area of 3 can be reduced, and the LED chip 51 is not separated from the lead frame 21 by this connection. As a result, the light extraction efficiency and the device manufacturing yield are improved.

【００６３】特に、本実施形態では、ｎ型側電極形成領
域５２およびｎ型側電極５３を内に凸な円弧を有する形
状にするので、ＬＥＤチップ５１の有効発光面積をさら
に大きくできる。この結果、光り取り出し効率がさらに
高まる。In particular, in this embodiment, since the n-type side electrode forming region 52 and the n-type side electrode 53 are formed into a shape having a convex arc inside, the effective light emitting area of the LED chip 51 can be further increased. As a result, the light extraction efficiency is further enhanced.

【００６４】更に、ＬＥＤチップ５１をリードフレーム
２１の底２２のほぼ中央に配置できるので、実施形態１
及び２と同様に、光の取り出しが均一化される。Furthermore, since the LED chip 51 can be arranged substantially at the center of the bottom 22 of the lead frame 21, the first embodiment
Similar to 2 and 2 , the extraction of light is made uniform.

【００６５】尚、本実施形態では、チップの一角部にｎ
型側電極５３を備えるＬＥＤチップ５１を用いたが、実
施形態１で用いたチップの一辺近傍にｎ型側電極８を備
えるＬＥＤチップ１を用いることができる。この場合、
リードフレーム２１の内壁２４からの突起部２３の先端
側側壁２３ａとＬＥＤチップ１のｎ型側電極８を近接配
置し、該電極８及び突起部２３の先端部上方側から、適
量の導電性樹脂１５を滴下することによって、リードフ
レーム２１とｎ型側電極８とを電気的に接続することが
できる。In this embodiment, n is provided at one corner of the chip.
Although the LED chip 51 including the mold side electrode 53 is used, the LED chip 1 including the n-type side electrode 8 near one side of the chip used in the first embodiment can be used. in this case,
The side wall 23a on the tip side of the protrusion 23 from the inner wall 24 of the lead frame 21 and the n-type side electrode 8 of the LED chip 1 are arranged in proximity to each other, and an appropriate amount of conductive resin is provided from the upper side of the tip of the electrode 8 and the protrusion 23. By dropping 15, the lead frame 21 and the n-type side electrode 8 can be electrically connected.

【００６６】更に、本実施形態では、突起部を有するリ
ードフレーム２１にＬＥＤチップ５１を装着するように
したが、参考形態１で用いたリードフレーム１０にこの
ＬＥＤチップ５１を、該チップ５１のｎ型側電極５３と
リードフレーム１０の内壁１２とを近接配置して、ｎ型
側電極５３と内壁１２との対向位置上方側から適量の導
電性樹脂１５を滴下することにより、リードフレーム１
０とｎ型側電極５３とを電気的に接続することができ
る。Further, in the present embodiment, the LED chip 51 is mounted on the lead frame 21 having the protruding portion. However, the LED chip 51 is attached to the lead frame 10 used in the reference embodiment 1, and the n of the chip 51 is used. The mold side electrode 53 and the inner wall 12 of the lead frame 10 are arranged close to each other, and an appropriate amount of the conductive resin 15 is dropped from the upper side of the position where the n type side electrode 53 and the inner wall 12 face each other.
0 and the n-type side electrode 53 can be electrically connected.

【００６７】また、上述の実施形態１〜３および参考形
態１では、基板上にｎ型半導体とｐ型半導体がこの順序
で形成された構造の、ｐ型半導体の一部がｎ型半導体に
至るまで除去され、それぞれの導電型半導体上に電極が
形成されてなるラテラス型のＬＥＤチップにおいて、ｎ
型側電極を導電性樹脂により、ｐ型側電極をワイヤボン
ディングによりそれぞれ異なるリードフレームと電気的
に接続したが、ＬＥＤチップを構成する半導体各層の導
電型を上述と逆にし、ｐ型側電極を導電性樹脂により、
ｎ型側電極をワイヤボンディングによりそれぞれ異なる
リードフレームと電気的に接続してもよい。Further, the above-mentioned first to third embodiments and the reference form
In state 1 , in the structure in which the n-type semiconductor and the p-type semiconductor are formed in this order on the substrate, part of the p-type semiconductor is removed to reach the n-type semiconductor, and electrodes are formed on the respective conductivity-type semiconductors. In the subsequent terraced LED chip,
The mold side electrode is electrically connected to the different lead frame by the wire bonding, and the p type side electrode is electrically connected to the different lead frame by wire bonding. However, the conductivity type of each semiconductor layer forming the LED chip is reversed from the above, and the p type electrode is With conductive resin,
The n-type side electrode may be electrically connected to different lead frames by wire bonding.

【００６８】さらに、上述では導電性支持体としてリー
ドフレームを用いたが、ステム等の他の導電性支持体を
用いてもよい。Further, although the lead frame is used as the conductive support in the above description, other conductive support such as a stem may be used.

【００６９】加えて、上記実施形態１〜３および参考形
態１は、発光ダイオードについて説明したが、面発光レ
ーザ等を用いた他の半導体発光装置にも便宜用いること
ができる。In addition, the first to third embodiments and the reference form
In the first embodiment, the light emitting diode has been described, but it can be conveniently used for other semiconductor light emitting devices using a surface emitting laser or the like.

【００７０】尚、上述では、基板としてサファイアを用
いた発光装置について説明したが、他の絶縁物からなる
基板、あるいは、ＧａＡｓ、ＧａＰ、ＩｎＰ、Ｓｉ、Ｇ
ｅ等の半導体基板を用いた発光装置にも、本発明は有効
である。Although the light emitting device using sapphire as the substrate has been described above, the substrate is made of another insulator, or GaAs, GaP, InP, Si, G.
The present invention is also effective for a light emitting device using a semiconductor substrate such as e.

【００７１】また、上述では、ＧａＮ系半導体発光装置
について説明したが、本発明は、ＧａＰ系、ＧａＡｓ
系、ＺｎＳｅ系、ＳｉＣ系、あるいは、ＳｉＧｅ系等他
の半導体材料からなる半導体発光装置に利用できる。Although the GaN-based semiconductor light-emitting device has been described above, the present invention is based on GaP-based and GaAs.
It can be used for a semiconductor light emitting device made of another semiconductor material such as a ZnO-based, ZnSe-based, SiC-based, or SiGe-based material.

【００７２】[0072]

【発明の効果】本発明の発光装置では、導電性樹脂によ
り導電性支持体と電気的に接続される発光素子上に形成
された一対の電極のうちの一方の電極を、前記発光素子
を載置する前記導電性支持体の内壁に近接対向配置する
ので、発光素子の前記一方の電極側の側面と前記内壁と
の狭い間隙が、導電性樹脂の流動路となって、前記導電
性樹脂は前記一方の電極側に選択的に延出するように制
御できる。In the light emitting device of the present invention, one of a pair of electrodes formed on a light emitting element electrically connected to a conductive support by a conductive resin is mounted on the light emitting element. Since the conductive support is placed close to and facing the inner wall of the conductive support, a narrow gap between the inner wall and the side surface of the one side of the light emitting element serves as a flow path of the conductive resin, and the conductive resin is It can be controlled so as to selectively extend to the one electrode side.

【００７３】したがって、所定量の導電性樹脂を前記導
電性支持体の底に滴下しておくことにより、前記導電性
樹脂の延出が前記一対の電極のうちの他方の電極にまで
及ぶことなく、前記導電性支持体と前記一方の電極との
安定した電気的接続が実現される。この結果、歩留まり
良く発光装置を製造できる。Therefore, by dropping a predetermined amount of the conductive resin on the bottom of the conductive support, the conductive resin does not extend to the other electrode of the pair of electrodes. A stable electrical connection between the conductive support and the one electrode is realized. As a result, a light emitting device can be manufactured with a high yield.

【００７４】また、このような発光素子上の電極と導電
性支持体との電気的接続をワイヤボンディングにより行
う場合には、ワイヤ先端部にワイヤの直径よりも大きな
ボールが形成されるために、発光素子上の電極の面積を
このボ−ルと同程度に大きくする必要があるが、本発明
の発光装置では、発光素子上の一対の電極のうち一方の
電極は、ワイヤボンディングではなく導電性樹脂により
導電性支持体と接続されるので、前記一方の電極の面積
を小さくできる。この結果、光取り出し効率が高まる。When electrical connection between the electrode on the light emitting element and the conductive support is performed by wire bonding, a ball larger than the diameter of the wire is formed at the tip of the wire. Although it is necessary to make the area of the electrode on the light emitting element as large as this ball, in the light emitting device of the present invention, one electrode of the pair of electrodes on the light emitting element is made of a conductive material instead of wire bonding. Since the resin is connected to the conductive support, the area of the one electrode can be reduced. As a result, the light extraction efficiency is increased.

【００７５】加えて、発光素子上の隅部に形成された電
極にワイヤボンディングを行う場合には、発光素子に不
均一な加重がかかるために、該発光素子が載置されるべ
き導電性支持体から離脱することがあるが、導電性樹脂
により前記隅部に形成された電極と導電性支持体とを接
続する場合には、このような発光素子の離脱は生じな
い。したがって、製造歩留まりが向上する。In addition, when wire bonding is performed on the electrodes formed at the corners of the light emitting element, the light emitting element is unevenly weighted. Although it may separate from the body, such separation of the light emitting element does not occur when the electrodes formed in the corners are connected to the conductive support by the conductive resin. Therefore, the manufacturing yield is improved.

【００７６】また、本発明の発光装置では、前記発光素
子を載置する前記導電性支持体の内壁に突起部を設け、
該突起部の突出方向の先端部の側壁と前記発光素子上に
形成された一対の電極のうちの一方の電極とを近接対向
配置するので、前記突起部の側壁と前記発光素子の一方
の電極側の側面との狭い間隙が、前記発光素子の導電性
支持体への接着時の押圧により延出する導電性樹脂の流
動路となって、前記導電性樹脂は前記一方の電極側に選
択的に延出するように制御できる。In the light emitting device of the present invention, a protrusion is provided on the inner wall of the conductive support on which the light emitting element is mounted,
Since the side wall of the tip of the protrusion in the protruding direction and one electrode of the pair of electrodes formed on the light emitting element are arranged in close proximity to each other, the side wall of the protrusion and one electrode of the light emitting element are arranged. The narrow gap between the side surface and the side surface serves as a flow path of the conductive resin that is extended by the pressure when the light emitting element is bonded to the conductive support, and the conductive resin is selectively applied to the one electrode side. It can be controlled to extend to.

【００７７】したがって、所定量の導電性樹脂を導電性
支持体の底に滴下しておくことにより、前記導電性樹脂
の延出が前記一対の電極のうちの他方の電極にまで及ぶ
ことなく、前記導電性支持体と前記一方の電極との安定
した電気的接続が実現される。この結果、歩留まり良く
発光装置を製造できる。Therefore, by dropping a predetermined amount of the conductive resin on the bottom of the conductive support, the conductive resin does not extend to the other electrode of the pair of electrodes, A stable electrical connection between the conductive support and the one electrode is realized. As a result, a light emitting device can be manufactured with a high yield.

【００７８】また、この発光装置では、発光素子上の一
対の電極のうち一方の電極は、ワイヤボンディングでは
なく導電性樹脂により導電性支持体と接続されるので、
前記一方の電極の面積を小さくでき、且つ、この接続に
より前記発光素子が導電性支持体から離脱することがな
い。この結果、光取り出し効率、及び装置製造歩留まり
が高まる。Further, in this light emitting device, since one electrode of the pair of electrodes on the light emitting element is connected to the conductive support by the conductive resin, not by wire bonding,
The area of the one electrode can be reduced, and the connection prevents the light emitting element from being separated from the conductive support. As a result, the light extraction efficiency and the device manufacturing yield are improved.

【００７９】加えて、発光素子を導電性支持体の底のほ
ぼ中央に配置できるので、前記発光素子から出射した光
が前記導電性支持体の内壁により均一に反射され、光の
取り出しが均一化される。In addition, since the light emitting element can be arranged substantially at the center of the bottom of the conductive support, the light emitted from the light emitting element is uniformly reflected by the inner wall of the conductive support, and the light extraction is uniform. To be done.

【００８０】また、本発明の発光装置によれば、前記導
電性支持体に載置する発光素子の基板裏面にストライプ
状の溝を設け、該溝の延在方向が、前記導電性樹脂によ
り前記導電性支持体と電気的に接続される前記発光素子
上に形成された一対の電極のうちの一方の電極と前記導
電性支持体の内壁との対向方向に沿うように、前記発光
素子を前記導電性支持体の底に配置することにより、前
記溝が前記導電性樹脂を導く流動路になるので、これに
続く流動路として機能する前記発光素子の一方の電極側
の側面と前記内壁との狭い間隙に前記導電性樹脂が導か
れ、該導電性樹脂の延出が、より選択的に制御される。Further, according to the light emitting device of the present invention, a stripe-shaped groove is provided on the back surface of the substrate of the light emitting element mounted on the conductive support, and the extending direction of the groove is formed by the conductive resin. The light emitting element is arranged along the facing direction of one electrode of the pair of electrodes formed on the light emitting element electrically connected to the conductive support and the inner wall of the conductive support. By arranging the groove at the bottom of the conductive support, the groove serves as a flow path for guiding the conductive resin, so that the side surface on one electrode side of the light emitting element and the inner wall functioning as a flow path that follows the groove. The conductive resin is introduced into the narrow gap, and the extension of the conductive resin is controlled more selectively.

【００８１】したがって、この発光装置は、上述の製造
歩留まりが良好、外部への光取り出し効率の向上、等の
効果が得られるだけでなく、前記導電性樹脂による前記
導電性支持体と前記一方の電極とのより安定した電気的
接続が実現され、装置の製造歩留まりがさらに向上す
る。加えて、前記電気的接続に必要な導電性樹脂の量が
低減される。Therefore, this light-emitting device not only has the above-mentioned manufacturing yield and the effect of improving the efficiency of extracting light to the outside, but also has the above-mentioned effect that the conductive support made of the conductive resin and A more stable electrical connection with the electrodes is realized, and the manufacturing yield of the device is further improved. In addition, the amount of conductive resin required for the electrical connection is reduced.

【００８２】また、本発明の発光装置では、前記発光素
子を載置する前記導電性支持体の内壁に突起部を設け、
該突起部の突出方向の先端部の側壁と前記発光素子上に
形成された一対の電極のうちの一方の電極とを近接対向
配置するので、前記対向位置上方側から前記突起部と前
記一電極に連なるように少量の導電性樹脂を滴下するこ
とにより、前記導電性支持体と前記一電極との電気的接
続が可能となる。In the light emitting device of the present invention, a protrusion is provided on the inner wall of the conductive support on which the light emitting element is mounted,
Since the side wall of the tip of the protrusion in the protruding direction and one electrode of the pair of electrodes formed on the light emitting element are arranged in close proximity to each other, the protrusion and the one electrode are arranged from above the facing position. By dropping a small amount of a conductive resin so as to be continuous with the above, it is possible to electrically connect the conductive support and the one electrode.

【００８３】この接続方法では、前記突起部と前記一電
極の位置を観察しながら、前記導電性樹脂の滴下位置を
決定できるので、前記一対の電極を前記導電性樹脂によ
り短絡させることなく、前記導電性支持体と前記一電極
とを安定して電気的に接続可能である。この結果、歩留
まり良く発光装置を製造できる。In this connection method, the position where the conductive resin is dropped can be determined while observing the positions of the protrusion and the one electrode, so that the pair of electrodes is not short-circuited by the conductive resin and It is possible to stably and electrically connect the conductive support and the one electrode. As a result, a light emitting device can be manufactured with a high yield.

【００８４】また、この発光装置では、発光素子上の一
対の電極のうち一方の電極は、ワイヤボンディングでは
なく導電性樹脂により導電性支持体と接続されるので、
上述と同様に、光取り出し効率、及び装置製造歩留まり
が高まる。Further, in this light emitting device, one electrode of the pair of electrodes on the light emitting element is connected to the conductive support by the conductive resin, not by wire bonding.
Similar to the above, the light extraction efficiency and the device manufacturing yield are increased.

【００８５】加えて、発光素子を導電性支持体の底のほ
ぼ中央に配置できるので、前記発光素子から出射した光
が前記導電性支持体の内壁により均一に反射され、光の
取り出しが均一化される。In addition, since the light emitting element can be arranged substantially at the center of the bottom of the conductive support, the light emitted from the light emitting element is uniformly reflected by the inner wall of the conductive support, and the light extraction is made uniform. To be done.

【図面の簡単な説明】[Brief description of drawings]

【図１】本発明の参考形態１に係わるＧａＮ系青色ＬＥ
Ｄ装置の模式断面図である。GaN-based blue LE according to the reference embodiment 1 of the present invention
It is a schematic cross section of a D device.

【図２】上記参考形態１に係わるＬＥＤ装置の模式上面
図である。2 is a schematic top view of an LED device according to the Reference Embodiment 1.

【図３】本発明の第１の実施形態に係わるＧａＮ系青色
ＬＥＤ装置の模式斜視図である。FIG. 3 is a schematic perspective view of a GaN-based blue LED device according to the first embodiment of the present invention.

【図４】図３の点線Ａ−Ａに沿った模式断面図である。FIG. 4 is a schematic cross-sectional view taken along the dotted line AA of FIG.

【図５】本発明の第２の実施形態に係わるＧａＮ系青色
ＬＥＤ装置の模式斜視図である。FIG. 5 is a schematic perspective view of a GaN-based blue LED device according to a second embodiment of the present invention.

【図６】図５の点線にＢ−Ｂに沿った模式断面図であ
る。6 is a schematic cross-sectional view taken along the line BB of the dotted line in FIG.

【図７】本発明の第３の実施形態に係わるＧａＮ系青色
ＬＥＤ装置の模式上面図である。FIG. 7 is a schematic top view of a GaN-based blue LED device according to a third embodiment of the present invention.

【図８】従来のＬＥＤ装置の製造工程の一例を示す模式
断面図である。FIG. 8 is a schematic cross-sectional view showing an example of a manufacturing process of a conventional LED device.

【図９】従来のＬＥＤ装置を動作させたときの様子を示
す模式断面図である。FIG. 9 is a schematic cross-sectional view showing a state when a conventional LED device is operated.

【図１０】従来のＬＥＤ装置の模式断面図である。FIG. 10 is a schematic cross-sectional view of a conventional LED device.

【符号の説明】 １ ＬＥＤチップ（発光素子） ２ サファイア基板（基板） ３ ｎ型ＧａＮバッファ層（一導電型の半導体層） ８ ｎ型側電極（電極） １０ リードフレーム（導電性支持体） １１ 底 １２ 内壁 １５ 導電性樹脂[Explanation of symbols] 1 LED chip (light emitting element) 2 Sapphire substrate (substrate) 3 n-type GaN buffer layer (semiconductor layer of one conductivity type) 8 n-type side electrode (electrode) 10 Lead frame (conductive support) 11 bottom 12 inner wall 15 Conductive resin

Claims (6)

(57)【特許請求の範囲】(57) [Claims] 【請求項１】 基板上に形成された一導電型の半導体層
上に電極を備えた発光素子と、該発光素子を載置する有
底で且つ内壁を有する導電性支持体と、を備えた装置で
あって、前記電極と前記内壁が近接且つ対向するよう
に、前記発光素子が前記底に固着されるとともに、前記
電極と導電性支持体の内壁が導電性樹脂にて電気的に接
続され、前記発光素子は基板裏面にストライプ状の溝を
有し、該溝の延在方向が前記対向方向に沿うことを特徴
とする発光装置。1. A light-emitting element having an electrode on a semiconductor layer of one conductivity type formed on a substrate, and a conductive support having a bottom and an inner wall on which the light-emitting element is mounted. In the device, the light emitting element is fixed to the bottom so that the electrode and the inner wall are close and face each other, and the electrode and the inner wall of the conductive support are electrically connected by a conductive resin. , The light emitting element has a stripe-shaped groove on the back surface of the substrate.
A light-emitting device having the groove, wherein the extending direction of the groove is along the facing direction . 【請求項２】 基板上に形成された一導電型の半導体層
上に電極を備えた発光素子と、該発光素子を載置する有
底で且つ少なくとも一部に突起部を備えた内壁を有する
導電性支持体と、を備えた装置であって、前記電極と前
記突起部の先端部とが近接且つ対向するように前記発光
素子が前記底に固着されるともに、前記電極と前記導電
性支持体の突起部が導電性樹脂にて電気的に接続された
ことを特徴とする発光装置。2. A light emitting element having an electrode on a semiconductor layer of one conductivity type formed on a substrate, and an inner wall having a bottom for mounting the light emitting element and at least a part of which has a protrusion. A device including a conductive support, wherein the light emitting element is fixed to the bottom so that the electrode and the tip of the protrusion are in close proximity and face each other, and the electrode and the conductive support are provided. A light emitting device characterized in that the protrusions of the body are electrically connected by a conductive resin. 【請求項３】 請求項２記載の発光装置であって、前記
発光素子は基板裏面にストライプ状の溝を有し、該溝の
延在方向が前記対向方向に沿うことを特徴とする発光装
置。 3. The light emitting device according to claim 2, wherein:
The light emitting element has a stripe-shaped groove on the back surface of the substrate.
A light-emitting device characterized in that the extending direction is along the facing direction.
Place 【請求項４】 請求項１、２または３記載の発光装置で
あって、前記導電性樹脂は、前記電極上から、前記発光
素子と前記内壁との間隙、及び、前記発光素子と前記底
との間隙に連なって介在していることを特徴とする発光
装置。 4. A light emitting device according to claim 1, 2 or 3.
And the conductive resin emits light from above the electrode.
A gap between the element and the inner wall, and the light emitting element and the bottom
Light emission characterized by interposing in a gap between and
apparatus. 【請求項５】 請求項１、２、３または４記載の発光装
置の製造方法であって、前記導電性支持体の底に前記導
電性樹脂を滴下する工程と、前記発光素子を前記底に滴
下させた導電性樹脂上に押圧接着するとともに、該押圧
により前記導電性樹脂を前記発光素子と前記導電性支持
体との間隙に連なって延出させ、延出させた前記導電性
樹脂により前記電極と前記導電性支持体とを電気的に接
続する工程と、を備えることを特徴とする発光装置の製
造方法。5. The method for manufacturing a light emitting device according to claim 1, 2, 3 or 4, wherein the step of dropping the conductive resin on the bottom of the conductive support, and the light emitting element on the bottom. While being pressed and adhered onto the dropped conductive resin, the conductive resin is continuously extended by the pressure in the gap between the light emitting element and the conductive support, and the conductive resin is extended by the above. And a step of electrically connecting the electrode and the conductive support to each other. 【請求項６】 請求項１、２、３または４記載の発光装
置の製造方法であって、前記導電性支持体の内壁と前記
電極とを近接且つ対向するように前記発光素子を前記導
電性支持体の底に固着する工程と、前記電極と該電極に
近接配置させた前記導電性支持体の内壁に連なって前記
導電性を滴下することにより前記一方の電極と前記導電
性支持体とを電気的に接続する工程と、を備えることを
特徴とする発光装置の製造方法。6. The method for manufacturing a light-emitting device according to claim 1, 2, 3 or 4, wherein the light-emitting element is made of a conductive material such that the inner wall of the conductive support and the electrode are close to and face each other. A step of adhering to the bottom of the support, and the one electrode and the conductive support are formed by dropping the conductivity in series with the inner wall of the electrode and the conductive support placed in proximity to the electrode. And a step of electrically connecting the light emitting device.
JP30818196A 1996-11-19 1996-11-19 Light emitting device and method of manufacturing the same Expired - Fee Related JP3421520B2 (en)

Priority Applications (1)

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Application Number Priority Date Filing Date Title
JP30818196A JP3421520B2 (en) 1996-11-19 1996-11-19 Light emitting device and method of manufacturing the same

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JPH10150224A JPH10150224A (en) 1998-06-02
JP3421520B2 true JP3421520B2 (en) 2003-06-30

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4236738B2 (en) * 1998-08-27 2009-03-11 星和電機株式会社 Manufacturing method of semiconductor device
JP4296644B2 (en) * 1999-01-29 2009-07-15 豊田合成株式会社 Light emitting diode
JP2007027431A (en) 2005-07-15 2007-02-01 Toshiba Corp Light emitting device

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