JP3420437B2 - Low temperature firing porcelain composition - Google Patents

Low temperature firing porcelain composition

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Publication number
JP3420437B2
JP3420437B2 JP20696396A JP20696396A JP3420437B2 JP 3420437 B2 JP3420437 B2 JP 3420437B2 JP 20696396 A JP20696396 A JP 20696396A JP 20696396 A JP20696396 A JP 20696396A JP 3420437 B2 JP3420437 B2 JP 3420437B2
Authority
JP
Japan
Prior art keywords
glass
weight
dielectric
low temperature
porcelain composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP20696396A
Other languages
Japanese (ja)
Other versions
JPH1053461A (en
Inventor
健 竹之下
弘志 内村
勇二 立石
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
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Filing date
Publication date
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Priority to JP20696396A priority Critical patent/JP3420437B2/en
Publication of JPH1053461A publication Critical patent/JPH1053461A/en
Application granted granted Critical
Publication of JP3420437B2 publication Critical patent/JP3420437B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • H05K1/0306Inorganic insulating substrates, e.g. ceramic, glass
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/16Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は低温焼成磁器組成物
に関するもので、特に比誘電率が大で、誘電正接が小さ
く、導体抵抗の小さい銅(Cu)や銀(Ag)、金(A
u)等を同時焼成して配線導体を形成することが可能な
高周波領域で使用されるコンデンサ内蔵多層配線基板や
フィルタ内蔵多層配線基板等に好適な低温焼成磁器組成
物に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a low temperature fired porcelain composition, particularly copper (Cu), silver (Ag), gold (A) having a large relative dielectric constant, a small dielectric loss tangent, and a small conductor resistance.
The present invention relates to a low-temperature fired porcelain composition suitable for a multilayer wiring board with a built-in capacitor, a multilayer wiring board with a built-in filter, etc., which is used in a high frequency region in which a wiring conductor can be formed by cofiring u) and the like.

【0002】[0002]

【従来の技術】近年の高度情報化時代にあっては、情報
伝達の高速化、高周波化が進み、搭載される半導体素子
もより高速化、高集積化され、実装のより高密度化が要
求されることから、配線基板中にコンデンサやフィルタ
を内蔵することが広く採用されている。
2. Description of the Related Art In the era of advanced information technology in recent years, information transmission has become faster and higher in frequency, and semiconductor elements to be mounted have also become faster and highly integrated, requiring higher density mounting. Therefore, it is widely adopted to incorporate a capacitor or a filter in the wiring board.

【0003】一般に、コンデンサを配線基板中に内蔵す
るには、低誘電率の誘電体基板中に高誘電率の誘電体を
埋め込み、該高誘電率の誘電体の両端に電極を設けてコ
ンデンサ部を形成したり、高誘電率の誘電体シートの両
端に電極を印刷し、低誘電率の誘電体シートで前記高誘
電率の誘電体シートを挟み、積層して同時焼成によりコ
ンデンサ部を形成する等の方法が行われていた。
Generally, in order to embed a capacitor in a wiring board, a high dielectric constant dielectric material is embedded in a low dielectric constant dielectric material substrate, and electrodes are provided at both ends of the high dielectric constant dielectric material to form a capacitor part. Or by printing electrodes on both ends of a high-dielectric-constant dielectric sheet, sandwiching the high-dielectric-constant dielectric sheet with a low-dielectric-constant dielectric sheet, and stacking to form a capacitor section by simultaneous firing. And so on.

【0004】しかしながら、前記方法では誘電率の異な
る誘電体を焼成一体化することから互いに反応し易く、
所望の比誘電率やQ値が得られないという問題があっ
た。
However, in the above method, the dielectrics having different dielectric constants are fired and integrated, so that they easily react with each other,
There is a problem that desired relative permittivity and Q value cannot be obtained.

【0005】また、前記誘電体を全て高誘電率の強誘電
体で形成しようとすると、焼成温度が1300〜160
0℃程度と高温となり、同時焼成可能な配線導体として
は導体抵抗の大きなタングステン(W)やモリブデン
(Mo)等の高融点金属しか適用できず、それ故に基板
内の伝送線路の導体損による信号の伝送損失が大とな
り、昨今の高周波用の配線基板材料としては不適当であ
るという問題があった。
If it is attempted to form all of the above-mentioned dielectric material with a ferroelectric material having a high dielectric constant, the firing temperature is 1300 to 160.
Only high-melting-point metals such as tungsten (W) and molybdenum (Mo), which have a high conductor resistance, can be used as wiring conductors that can be simultaneously fired at temperatures as high as 0 ° C. Therefore, signals due to conductor loss of the transmission line in the substrate can be applied. However, there is a problem in that it is unsuitable as a material for a wiring board for high frequencies these days.

【0006】一方、配線基板中にフィルタを内蔵させる
には、配線導体と誘電体とによりインダクタンスL、キ
ャパシタンスC及び抵抗Rを設け、それらを組み合わせ
て形成することが行われている。
On the other hand, in order to incorporate a filter in a wiring board, an inductance L, a capacitance C and a resistance R are provided by a wiring conductor and a dielectric, and they are formed by combining them.

【0007】前記キャパシタンスCは、誘電体の誘電率
が大であるほど小さなスペースで形成することが可能で
あり、従って高誘電率の誘電体を用いるほど内蔵するフ
ィルタを小型化することができる。
The capacitance C can be formed in a smaller space as the dielectric constant of the dielectric is larger. Therefore, the built-in filter can be downsized as the dielectric having a higher dielectric constant is used.

【0008】しかしながら、隣接する配線間が接近し過
ぎると信号の相互干渉によりノイズを生じるため誘電率
を大きくするにも限度があり、その上、容量形成部のみ
を高誘電率の誘電体で形成せんとすれば、前記コンデン
サの場合と同様、伝送線路の導体損による信号の伝送損
失が問題となる。
However, if the adjacent wirings are too close to each other, noise is generated due to mutual interference of signals, so that there is a limit to increasing the dielectric constant, and moreover, only the capacitor forming portion is formed of a high dielectric constant dielectric. In that case, as in the case of the capacitor, the signal transmission loss due to the conductor loss of the transmission line becomes a problem.

【0009】そこで、先ず、基板内の伝送線路の導体損
を小さくするために、導体抵抗の小さいCuやAg、A
u等を同時焼成できる配線基板材料として、ガラスとセ
ラミックスの混合物を低温で焼成したガラスセラミック
スを用いることが提案されている。
Therefore, first, in order to reduce the conductor loss of the transmission line in the substrate, Cu, Ag, A having a low conductor resistance is used.
It has been proposed to use glass ceramics obtained by firing a mixture of glass and ceramics at a low temperature as a wiring substrate material capable of simultaneously firing u and the like.

【0010】現在、高周波回路技術の進歩により、種々
のガラスセラミックスから成る配線基板を用いて、高周
波用の伝送線路及びその線路波長を利用した共振器、カ
プラ、フィルター等の高周波回路素子が普及しつつある
が、要求される特性として、小型化に対しては、比誘電
率が大で、高周波での誘電損失が小、言い換えればQ値
が大であることや、共振周波数の温度に対する変化が小
であること等が挙げられ、信頼性に対しては、化学的に
安定であること、及び機械的強度が高いこと等が挙げら
れる。
At present, with the progress of high-frequency circuit technology, high-frequency circuit elements such as resonators, couplers, and filters utilizing high-frequency transmission lines and their line wavelengths have become widespread by using wiring substrates made of various glass ceramics. However, the required characteristics are that, with respect to miniaturization, the relative dielectric constant is large, the dielectric loss at high frequencies is small, in other words, the Q value is large, and the change of the resonance frequency with respect to temperature changes. For example, it is small, and for reliability, it is chemically stable and has high mechanical strength.

【0011】かかる諸特性を満足せんとして、例えば、
BaO−TiO2 系材料、BaO−希土類元素酸化物−
TiO2 系材料等が知られており、特に、高誘電率、低
誘電正接の特性を有し、マイクロ波用回路基板等に用い
られているCaTiO3 ・La2 Ti2 7 ・Nd(M
0.5 Ti0.5 )O3 ・MgTiO3 ・ZnO等が提案
されている(特公平3−3628号公報参照)。
If the above various characteristics are not satisfied, for example,
BaO-TiO 2 based materials, BaO-rare earth oxide -
TiO 2 -based materials and the like are known, and particularly CaTiO 3 · La 2 Ti 2 O 7 · Nd (M has a high dielectric constant and a low dielectric loss tangent and are used for microwave circuit boards and the like.
g 0.5 Ti 0.5 ) O 3 .MgTiO 3 .ZnO and the like have been proposed (see Japanese Patent Publication No. 3-3628).

【0012】[0012]

【発明が解決しようとする課題】しかしながら、前記提
案のCaTiO3 ・La2 Ti2 7 ・Nd(Mg0.5
Ti0.5 )O3 ・MgTiO3 ・ZnOは、単体で緻密
に焼結させるにはやはり1200〜1500℃の高温で
焼成することが必要であり、この材料と同時焼成可能な
配線導体としては前述の如く導体抵抗の大きなタングス
テン(W)やモリブデン(Mo)等の高融点金属に限定
されてしまい、その結果、前記従来技術と同様、高周波
領域においては大きな導体抵抗が信号の伝送損失を大と
してしまい高周波領域で使用され、更なる小型化が要求
されるコンデンサ内蔵多層配線基板やフィルタ内蔵多層
配線基板等には適用できないという課題があった。
However, the above-mentioned proposed CaTiO 3 .La 2 Ti 2 O 7 .Nd (Mg 0.5
Ti 0.5 ) O 3 .MgTiO 3 .ZnO needs to be fired at a high temperature of 1200 to 1500 ° C. in order to be densely sintered alone. As described above, the conductor resistance is limited to refractory metals such as tungsten (W) and molybdenum (Mo) having a large conductor resistance. As a result, as in the above-described conventional technique, a large conductor resistance causes a large signal transmission loss in a high frequency region. There is a problem that it cannot be applied to a multilayer wiring board with a built-in capacitor, a multilayer wiring board with a filter, etc., which is used in a high frequency region and is required to be further downsized.

【0013】[0013]

【発明の目的】本発明は、前記課題を解消せんとして成
されたもので、その目的は、高い誘電率と低い誘電正接
を有し、誘電体共振器等に採用されているNdAlO3
・CaTiO3 系材料を利用することにより、少なくと
も20を越える比誘電率と、高周波領域で低い誘電正接
を示すという特性を有し、かつ1000℃以下の焼成温
度で緻密な焼結体が得られるとともに、同時焼成でC
u、Ag、Au等を配線導体とした多層化が可能な、よ
り小型化された高周波用のコンデンサ内蔵多層配線基板
やフィルタ内蔵多層配線基板等の配線基板材料に好適な
低温焼成磁器組成物を提供することにある。
SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and its object is to have NdAlO 3 which has a high dielectric constant and a low dielectric loss tangent and is used for a dielectric resonator or the like.
By using a CaTiO 3 based material, a dense sintered body having a relative dielectric constant of at least 20 and a low dielectric loss tangent in a high frequency region and having a firing temperature of 1000 ° C. or less can be obtained. Together with C by co-firing
A low-temperature fired porcelain composition suitable for a wiring board material such as a multilayered wiring board with a built-in capacitor for high frequency and a smaller size, which can be multilayered using u, Ag, Au, etc. as a wiring conductor. To provide.

【0014】[0014]

【課題を解決するための手段】本発明者等は、前記課題
を鋭意検討した結果、比誘電率が20を越える緻密なガ
ラスセラミック焼結体を得るためには、高い誘電率と低
い誘電正接を有するNdAlO3 ・CaTiO3 系材料
をフィラーとしてガラスと混合し、該ガラスに対するフ
ィラーの量比を大きくすべく、ガラスの流動性とフィラ
ーに対するガラスの濡れ性に着目した結果、両特性に重
要な影響を及ぼすものとしてガラスの軟化点が低い程、
低温で流動性と濡れ性が優れ、かつフィラーの量比も増
加させることができることを知見して本発明に至った。
Means for Solving the Problems The inventors of the present invention have made earnest studies on the above problems, and as a result, in order to obtain a dense glass-ceramic sintered body having a relative dielectric constant of more than 20, a high dielectric constant and a low dielectric loss tangent were used. As a result of focusing on the fluidity of the glass and the wettability of the glass with respect to the filler in order to increase the ratio of the amount of the filler to the glass by mixing the NdAlO 3 · CaTiO 3 based material having the The lower the softening point of glass as an influence,
The present invention has been accomplished by finding that the fluidity and wettability are excellent at low temperature, and the amount ratio of filler can be increased.

【0015】即ち、本発明の低温焼成磁器組成物は、9
00〜1000℃の焼成温度で緻密化する焼結体で、そ
の組成が10〜30重量%の軟化点が約560℃である
23 −ZnO−SiO2 −Na2 O−Al2 3
ガラスと、酸化物換算で1〜10重量%のLiと、66
〜86重量%のNdAlO3 ・CaTiO3 から成り、
得られた焼結体が20を越える誘電率と、200MPa
以上の抗折強度を示すことを特徴とするものである。
That is, the low temperature fired porcelain composition of the present invention comprises 9
B 2 O 3 —ZnO—SiO 2 —Na 2 O—Al 2 O, which is a sintered body that densifies at a firing temperature of 00 to 1000 ° C. and has a composition of 10 to 30 wt% and a softening point of about 560 ° C. 3 system glass, 1 to 10% by weight of Li in terms of oxide, and 66
To 86 consists of a percent by weight of NdAlO 3 · CaTiO 3,
The obtained sintered body has a dielectric constant exceeding 20 and 200 MPa
It is characterized by showing the above-mentioned bending strength.

【0016】また、前記B2 3 −ZnO−SiO2
Na2 O−Al2 3 系ガラスが15〜25重量%と、
Liが酸化物換算で2〜7重量%と、NdAlO3 ・C
aTiO3 が70〜80重量%から成るものがより望ま
しい。
Further, the B 2 O 3 --ZnO--SiO 2-
Na 2 O-Al 2 O 3 based glass is 15 to 25% by weight,
Li is 2 to 7% by weight in terms of oxide, and NdAlO 3 .C
More preferably, the aTiO 3 content is 70 to 80% by weight.

【0017】[0017]

【作用】本発明の低温焼成磁器組成物によれば、B2
3 −ZnO−SiO2 −Na2O−Al2 3 系ガラス
は、非鉛系ガラス中、最も低い約560℃の軟化点を有
することから該ガラスをフィラー粒子中に分散させて加
熱すると、低温で流動してフィラーを濡らし、小量でフ
ィラー間の空隙を充填することになる。
According to the low temperature fired porcelain composition of the present invention, B 2 O
3 -ZnO-SiO 2 -Na 2 O -Al 2 O 3 based glass, in a non-lead glass, when heated by dispersing the glass in the filler particles from having a softening point of the lowest about 560 ° C., It will flow at a low temperature to wet the filler and fill the voids between the fillers in small amounts.

【0018】また、フィラーとしてLiを用いると、ガ
ラスの軟化点を更に低下させ、前記ガラスの作用をより
促進させる。
When Li is used as the filler, the softening point of the glass is further lowered and the action of the glass is further promoted.

【0019】一方、フィラーとして用いるNdAlO3
・CaTiO3 は、それ自体が40〜50の比誘電率
と、約2×10-4の誘電正接を有し、前記ガラスの比誘
電率が約5程度であっても、両者の組成比を選択すると
ともに、NdAlO3 ・CaTiO3 の反応による分解
を抑制すれば、前記ガラスとNdAlO3 ・CaTiO
3 から成るガラスセラミックスの比誘電率が20を越
え、誘電正接も小さくすることが可能となる。
On the other hand, NdAlO 3 used as a filler
-CaTiO 3 itself has a relative permittivity of 40 to 50 and a dielectric loss tangent of about 2 x 10 -4. Even if the relative permittivity of the glass is about 5, the composition ratio of both is By selecting and suppressing decomposition of NdAlO 3 · CaTiO 3 by reaction, the glass and NdAlO 3 · CaTiO 3
The relative permittivity of the glass-ceramic made of 3 exceeds 20, and the dielectric loss tangent can be reduced.

【0020】従って、従来の比誘電率が約10程度のガ
ラスセラミック配線基板と比較すると、配線長は比誘電
率の平方根に、配線面積は比誘電率にそれぞれ反比例す
ることから、前述のように比誘電率が20以上になると
配線長で約2/3以下、配線面積で約1/2以下とする
ことが可能となり小型化が実現できることになる。
Therefore, as compared with the conventional glass-ceramic wiring board having a relative permittivity of about 10, the wiring length is inversely proportional to the square root of the relative permittivity, and the wiring area is inversely proportional to the relative permittivity. When the relative permittivity is 20 or more, the wiring length can be reduced to about ⅔ or less and the wiring area can be reduced to about ½ or less, so that miniaturization can be realized.

【0021】更に、前記ガラスとNdAlO3 ・CaT
iO3 のみを焼成した場合には、緻密な焼結体が得られ
ないが、前述のようにフィラーとして添加するLiがガ
ラスの軟化点を下げる作用をし、緻密化を促進して低温
で緻密な焼結体が得られることになり、その結果、90
0〜1000℃の低温度でCu、Ag、Auの導体材3
とも同時に焼成できることから、これらの配線導体を具
備した多層配線基板等の微細配線化が容易に達成でき、
基板のより小型化が実現できることになる。
Further, the glass and NdAlO 3 .CaT
When only iO 3 is fired, a dense sintered body cannot be obtained, but as described above, Li added as a filler has a function of lowering the softening point of glass and promotes densification, resulting in densification at low temperature. As a result, an excellent sintered body can be obtained, and as a result, 90
Cu, Ag, Au conductor material 3 at low temperature of 0 ~ 1000 ℃
Since both can be fired at the same time, it is possible to easily achieve fine wiring of a multilayer wiring board or the like equipped with these wiring conductors.
A smaller board can be realized.

【0022】[0022]

【発明の実施の形態】本発明の低温焼成磁器組成物にお
いて、軟化点が約560℃のB2 3 −ZnO−SiO
2 −Na2 O−Al2 3 系ガラスが10重量%未満の
場合、他の成分が所定範囲内であっても、前記フィラー
粒子間の空隙を該ガラスで充填できないため焼結不良と
なり、緻密な焼結体が得られず、逆に30重量%を越え
ると過焼結となり、ボイドが発生してこれも緻密な焼結
体とはならない。
BEST MODE FOR CARRYING OUT THE INVENTION In the low temperature fired porcelain composition of the present invention, B 2 O 3 —ZnO—SiO having a softening point of about 560 ° C.
When the content of 2 -Na 2 O-Al 2 O 3 based glass is less than 10% by weight, the voids between the filler particles cannot be filled with the glass even if other components are within a predetermined range, resulting in poor sintering, A dense sintered body cannot be obtained, and conversely, if it exceeds 30% by weight, oversintering occurs and voids are generated, which also does not become a dense sintered body.

【0023】従って、前記ガラスの量は10〜30重量
%に特定され、特に焼結性の点からは15〜25重量%
がより望ましい。
Therefore, the amount of the glass is specified to be 10 to 30% by weight, and particularly 15 to 25% by weight from the viewpoint of sinterability.
Is more desirable.

【0024】また、前記ガラスとNdAlO3 ・CaT
iO3 の量はそれぞれ所定範囲内であってもLiを含有
しない場合、ガラスの軟化点は低下せず、少ないガラス
量でフィラー粒子間の空隙を充填できず、10重量%を
越えると過焼結となりボイドが発生し、いずれも焼結体
は緻密化しない。
Further, the glass and NdAlO 3 .CaT
Even if the amount of iO 3 is within the respective predetermined ranges, if Li is not contained, the softening point of the glass does not decrease, the voids between the filler particles cannot be filled with a small amount of glass, and if it exceeds 10% by weight, it is overbaked. As a result, voids are formed and the sintered body is not densified.

【0025】従って、前記Liの量は酸化物換算で1〜
10重量%となり、より望ましくは2〜7重量%とな
る。
Therefore, the amount of Li is 1 to 0 in terms of oxide.
It becomes 10% by weight, more preferably 2 to 7% by weight.

【0026】一方、NdAlO3 ・CaTiO3 の量が
66重量%未満の場合、比誘電率が20より低くなると
ともに、ガラス量が多過ぎるために過焼結となり、86
重量%を越えるとガラス量が少な過ぎるために焼結不良
となり、いずれの場合も誘電正接が大となる。
On the other hand, if the amount of NdAlO 3 · CaTiO 3 is less than 66 wt%, the dielectric constant is lower than 20 causes excessive sintering because the glass amount is too large, 86
If the amount exceeds 5% by weight, the amount of glass is too small, resulting in poor sintering, and the dielectric loss tangent becomes large in any case.

【0027】従って、前記NdAlO3 ・CaTiO3
の量は、66〜86重量%に特定され、誘電特性及び緻
密化の点からは、70〜80重量%がより好適である。
Therefore, the NdAlO 3 .CaTiO 3 is
The amount is specified to be 66 to 86% by weight, and 70 to 80% by weight is more preferable in terms of dielectric properties and densification.

【0028】次に、焼成温度が900℃未満の場合に
は、原料の配合量がそれぞれ所定量であっても焼結不良
となり、逆に1000℃を越えると過焼結となり易く、
その上、いずれの場合も比誘電率が小さく誘電正接が大
となる他、CuやAg、Auの導体材料を用いて同時焼
成することができなくなる。
Next, when the firing temperature is lower than 900 ° C., sintering fails even when the raw material content is a predetermined amount.
In addition, in either case, the relative dielectric constant is small and the dielectric loss tangent is large, and it is impossible to perform simultaneous firing using a conductor material such as Cu, Ag or Au.

【0029】また、かかる低温焼成磁器組成物を用いて
配線基板を作製する場合には、例えば、原料粉末の混合
物を公知のテープ成形法、即ちドクターブレード法や圧
延法等に従い、絶縁層形成用のグリーンシートを成形す
る。
When a wiring board is produced using such a low-temperature fired porcelain composition, for example, a mixture of raw material powders is used for forming an insulating layer according to a known tape forming method, that is, a doctor blade method or a rolling method. Mold the green sheet.

【0030】次に、前記グリーンシート表面に配線層用
のメタライズとして、CuやAg、Auの粉末、特にC
u粉末を含む金属ペーストを用いて配線パターンをスク
リーン印刷、グラビア印刷、オフセット印刷等の手段に
より形成するとともに、必要に応じて前記グリーンシー
トにスルーホールを形成して該スルーホール内に前記ペ
ーストを充填し、次いで複数のグリーンシートを積層圧
着した後、N2 やArガス等の非酸化性雰囲気中、前記
焼成温度で焼成することにより、配線層と絶縁層とを同
時に焼成することができる。
Next, as a metallization for the wiring layer on the surface of the green sheet, powder of Cu, Ag, Au, especially C
A wiring pattern is formed by means of screen printing, gravure printing, offset printing or the like using a metal paste containing u powder, and a through hole is formed in the green sheet if necessary, and the paste is placed in the through hole. The wiring layer and the insulating layer can be fired at the same time by filling and then laminating and pressing a plurality of green sheets, and then firing at the firing temperature in a non-oxidizing atmosphere such as N 2 or Ar gas.

【0031】[0031]

【実施例】以下、本発明の低温焼成磁器組成物について
具体的に詳述する。先ず、平均粒径が5μm以下の軟化
点が約560℃であるB2 3 −ZnO−SiO2 −N
2 O−Al2 3 系ガラスと、平均粒径が10μm以
下のLiの炭酸塩、及び60容量%のNdAlO3 と4
0容量%のCaTiO3 を湿式混合した後、乾燥し、次
いで1300〜1400℃で仮焼した後、再度湿式粉砕
して得た平均粒径が5μm以下のNdAlO3 ・CaT
iO3 の各原料粉末を表1の組成に従って混合した。
EXAMPLES The low temperature fired porcelain composition of the present invention will be described in detail below. First, B 2 O 3 —ZnO—SiO 2 —N having an average particle size of 5 μm or less and a softening point of about 560 ° C.
a 2 O—Al 2 O 3 based glass, Li carbonate having an average particle size of 10 μm or less, and 60% by volume of NdAlO 3 and 4
NdAlO 3 .CaT having an average particle size of 5 μm or less obtained by wet mixing 0 vol% CaTiO 3 , dried, then calcined at 1300 to 1400 ° C., and then wet pulverized again.
Raw material powders of iO 3 were mixed according to the composition shown in Table 1.

【0032】そして、前記混合物に有機バインダー、可
塑剤、有機溶媒を添加して泥漿を調製し、該泥漿を乾燥
してメッシュパスすることにより、成形用粉末を作製し
た後、該成形用粉末をプレス成形して厚さ約6.5mm
の円柱状及び平板状の2種類の成形体を得た。
Then, an organic binder, a plasticizer, and an organic solvent are added to the mixture to prepare a slurry, and the slurry is dried and mesh-passed to prepare a molding powder, and then the molding powder is prepared. Press formed to a thickness of about 6.5 mm
There were obtained two types of molded products, a cylindrical one and a flat plate-shaped one.

【0033】かくして得られた成形体を、大気中、45
0℃の温度にて脱バインダーした後、表1に示す条件に
て焼成して低温焼成磁器組成物の焼結体を得た。
The molded body thus obtained was placed in the atmosphere at 45
The binder was removed at a temperature of 0 ° C. and then fired under the conditions shown in Table 1 to obtain a sintered body of the low temperature fired porcelain composition.

【0034】[0034]

【表1】 [Table 1]

【0035】前記評価用の焼結体を用いて焼結性及び比
誘電率、誘電正接をそれぞれ以下の方法で測定評価し
た。
Sinterability, relative permittivity, and dielectric loss tangent were measured and evaluated by the following methods using the above-mentioned sintered body for evaluation.

【0036】先ず、焼結性は浸透探傷液に浸漬して該液
の浸透の有無を目視検査し、浸透が全く認められなかっ
たものを焼結性良と判定した。
First, the sinterability was evaluated by immersing the sample in a penetrant flaw detection liquid and visually inspecting the liquid for permeation.

【0037】一方、比誘電率及び誘電正接は、前記焼結
体から直径10mm、厚さ5mmの試料を切り出し、5
〜10GHzにてネットワークアナライザー、シンセサ
イズドスイーパーを用いて円柱共振器法により測定し
た。
On the other hand, for the relative dielectric constant and dielectric loss tangent, a sample having a diameter of 10 mm and a thickness of 5 mm was cut out from the sintered body, and
It was measured by a cylindrical resonator method using a network analyzer and a synthesized sweeper at -10 GHz.

【0038】具体的には、直径50mmの銅板治具の間
に試料の誘電体基板を挟んで測定し、共振器のTE01
1モードの共振特性から比誘電率、誘電正接を算出し
た。
Specifically, the dielectric substrate of the sample is sandwiched between copper plate jigs having a diameter of 50 mm for measurement, and TE01 of the resonator is measured.
The relative permittivity and dielectric loss tangent were calculated from the resonance characteristics of one mode.

【0039】また、抗折強度はJISR1601の規格
に準じて前記平板状焼結体から長さ38mm、幅4m
m、高さ3mmの4点曲げ抗折試験片を切り出し、上ス
パン10mm、下スパン30mmの4点曲げ試験から求
めた。
The bending strength is 38 mm in length and 4 m in width from the flat plate-shaped sintered body according to JIS R1601 standard.
A 4-point bending bending test piece with m and a height of 3 mm was cut out and determined from a 4-point bending test with an upper span of 10 mm and a lower span of 30 mm.

【0040】[0040]

【表2】 [Table 2]

【0041】表の結果から明らかなように、本発明の請
求範囲外である試料番号1、8、9、14、15、1
9、20はいずれも900〜1000℃の焼成温度では
焼結性が悪く、強度も200MPa未満と低く、特に試
料番号1、8、19では誘電特性を測定することができ
ず、また、試料番号23は焼結性は満足できるものの強
度が200MPa未満と不十分であり、試料番号15で
は比誘電率が20未満となり所期の目的を達成しない。
As is clear from the results in the table, sample numbers 1, 8, 9, 14, 15, 1 which are outside the scope of the present invention are claimed.
Nos. 9 and 20 have poor sinterability at a firing temperature of 900 to 1000 ° C., and have a low strength of less than 200 MPa. In particular, Sample Nos. 1, 8 and 19 cannot measure the dielectric properties, and Sample Nos. Sample No. 23, which has satisfactory sinterability, has an insufficient strength of less than 200 MPa, and Sample No. 15 has a relative dielectric constant of less than 20, which does not achieve the intended purpose.

【0042】それに対して、本発明ではいずれも900
〜1000℃の焼成温度で充分、焼結しており、強度も
200MPa以上と高く、比誘電率も20.7以上を示
している。
On the other hand, in the present invention, all are 900
It has been sufficiently sintered at a firing temperature of up to 1000 ° C, has a high strength of 200 MPa or more, and has a relative dielectric constant of 20.7 or more.

【0043】[0043]

【発明の効果】以上詳述した通り、本発明の低温焼成磁
器組成物は、比誘電率が20以上であり、高周波領域で
誘電正接が小さい緻密な焼結体が得られるので、各種配
線基板として微細な配線が可能となり、また、該焼結体
は高強度であるためチップ抵抗や半導体素子等を実装す
る際の各種作業に対しても何ら問題なく、特別な補強を
要することなく単体でも使用することができ、その上、
900〜1000℃の低温度で焼成可能なため、導体抵
抗の小さいCu、Ag、Au等による配線を同時焼成に
より形成することができ、多層化が可能な、より小型化
された高周波用のコンデンサ内蔵多層配線基板やフィル
タ内蔵多層配線基板等の配線基板材料として好適な低温
焼成磁器組成物が得られる。
As described in detail above, since the low temperature fired porcelain composition of the present invention has a relative dielectric constant of 20 or more and a dense sintered body having a small dielectric loss tangent in a high frequency region, various wiring boards can be obtained. As a result, fine wiring is possible, and since the sintered body has high strength, there is no problem in various works when mounting chip resistors, semiconductor elements, etc. Can be used on top of that,
Since it can be fired at a low temperature of 900 to 1000 ° C., a wiring made of Cu, Ag, Au or the like having a low conductor resistance can be formed by simultaneous firing, and a multilayered, more compact capacitor for high frequency can be formed. A low temperature fired porcelain composition suitable as a wiring board material such as a built-in multilayer wiring board and a filter-embedded multilayer wiring board can be obtained.

───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平8−77829(JP,A) 特開 平7−182922(JP,A) 特開 平3−45556(JP,A) 特開 平6−76633(JP,A) (58)調査した分野(Int.Cl.7,DB名) C04B 35/42 - 35/50 CA(STN) REGISTRY(STN)─────────────────────────────────────────────────── ─── Continuation of front page (56) Reference JP-A-8-77829 (JP, A) JP-A-7-182922 (JP, A) JP-A-3-45556 (JP, A) JP-A-6- 76633 (JP, A) (58) Fields investigated (Int.Cl. 7 , DB name) C04B 35/42-35/50 CA (STN) REGISTRY (STN)

Claims (2)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】ホウケイ酸亜鉛系(B2 3 −ZnO−S
iO2 −Na2 O−Al2 3 系)ガラスが10〜30
重量%と、リチウム(Li)が酸化物換算で1〜10重
量%と、アルミン酸ネオジウムとチタン酸カルシウムの
複合酸化物(NdAlO3 ・CaTiO3 )が66〜8
6重量%から成り、900〜1000℃の焼成温度で緻
密化する焼結体であって、該焼結体の比誘電率が20を
越え、抗折強度が200MPa以上であることを特徴と
する低温焼成磁器組成物。
1. A zinc borosilicate type (B 2 O 3 —ZnO—S
iO 2 —Na 2 O—Al 2 O 3 type glass is 10 to 30
% By weight, 1 to 10% by weight of lithium (Li) in terms of oxide, and 66 to 8 of composite oxide of neodymium aluminate and calcium titanate (NdAlO 3 .CaTiO 3 ).
A sintered body comprising 6% by weight and densified at a firing temperature of 900 to 1000 ° C., characterized in that the relative dielectric constant of the sintered body exceeds 20, and the flexural strength is 200 MPa or more. Low temperature fired porcelain composition.
【請求項2】前記ホウケイ酸亜鉛系(B2 3 −ZnO
−SiO2 −Na2O−Al2 3 系)ガラスが15〜
25重量%と、リチウム(Li)が酸化物換算で2〜7
重量%と、アルミン酸ネオジウムとチタン酸カルシウム
の複合酸化物(NdAlO3 ・CaTiO3 )が70〜
80重量%から成ることを特徴とする請求項1記載の低
温焼成磁器組成物。
2. The zinc borosilicate type (B 2 O 3 --ZnO)
-SiO 2 -Na 2 O-Al 2 O 3 system) glass 15
25% by weight and lithium (Li) 2 to 7 in terms of oxide
70% by weight of the composite oxide (NdAlO 3 · CaTiO 3 ) of neodymium aluminate and calcium titanate.
The low temperature fired porcelain composition according to claim 1, which is composed of 80% by weight.
JP20696396A 1996-08-06 1996-08-06 Low temperature firing porcelain composition Expired - Fee Related JP3420437B2 (en)

Priority Applications (1)

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Application Number Priority Date Filing Date Title
JP20696396A JP3420437B2 (en) 1996-08-06 1996-08-06 Low temperature firing porcelain composition

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JP3420437B2 true JP3420437B2 (en) 2003-06-23

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Country Link
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Publication number Priority date Publication date Assignee Title
KR100424988B1 (en) * 2001-02-27 2004-03-27 주식회사 아모텍 Dielectric Ceramic Compositions
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