JP3372061B2 - High frequency dielectric material, resonator and method of manufacturing the same - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high frequency dielectric material suitable for a high frequency resonator, a resonator and a manufacturing method thereof.

[0002]

2. Description of the Related Art Substrate materials that can be fired at low temperatures have been developed as substrate materials used for wiring boards of electric and electronic devices.
It is possible to perform simultaneous co-firing at a low temperature of 00 ° C or less. Such a low-temperature fired substrate is used in a low frequency region, for example, a frequency of about 0.5 GHz or less, and the substrate material is generally glass having a softening point of about 700 to 900 ° C.
A low temperature sintered material including Al ₂ O ₃ aggregate is used.

[0003]

DISCLOSURE OF THE INVENTION The inventors of the present invention have laminated a dielectric layer formed by using the above-mentioned low temperature sintering material, and formed a strip line between the dielectric layers to form a triplate circuit. A prototype resonator was manufactured.

However, the dielectric constant of the dielectric layer formed by using the above-mentioned low-temperature sintered material changes depending on the temperature, and for example, the temperature coefficient τε of the dielectric constant at a frequency of 2 GHz is 130 pp.
There is about m / ℃. For this reason, when used in a high frequency region, for example, at a frequency of 0.5 GHz or more, it has been found that the resonance frequency changes significantly due to temperature changes, making it difficult to put into practical use.

An object of the present invention is to provide a high frequency dielectric material in which the temperature characteristic of the resonance frequency of the high frequency resonator is improved, and a resonator using such a high frequency dielectric material.

[0006]

The above objects are achieved by the present invention described in (1) to (12) below. (1) Containing glass, oxide aggregate having a positive temperature coefficient τε of permittivity, and oxide aggregate having a negative temperature coefficient τε of permittivity (provided that both aluminum oxide and titanium oxide are contained. The content of calcium titanate in the oxide aggregate contains calcium titanate as the oxide aggregate having a negative τε, and magnesium titanate as the oxide aggregate having a positive τε. Is 20 to 30% by volume, and the temperature coefficient τε of the dielectric constant at 2 GHz and -40 to 125 ° C of the glass is 150 to 170 ppm / ° C, 40 to 2
Average thermal expansion coefficient at 90 ° C. is 5.5 to 6.5 × 10
^-6 deg ^-1 , a high frequency dielectric material having a glass content of 50 to 80% by volume with respect to the total amount of the oxide aggregate and the glass. (2) Containing glass, oxide aggregate having a positive temperature coefficient τε of permittivity, and oxide aggregate having a negative temperature coefficient τε of permittivity (provided that both aluminum oxide and titanium oxide are contained. However, the content of calcium titanate in the oxide aggregate includes calcium titanate as the oxide aggregate having a negative τε and aluminum oxide as the oxide aggregate having a positive τε. 20-33% by volume,
The temperature coefficient τε of the dielectric constant of the glass at 2 GHz and -40 to 125 ° C is 150 to 170 ppm / ° C, 40 to 290.
Average thermal expansion coefficient at ℃ 5.5-6.5 × 10 ^-6 de
g ^-1 , and the content of the glass with respect to the total amount of the oxide aggregate and the glass is 50 to 80%, and the high frequency dielectric material. (3) Containing glass, oxide aggregate having a positive dielectric constant temperature coefficient τε, and oxide aggregate having a negative dielectric constant temperature coefficient τε (provided that both aluminum oxide and titanium oxide are contained. The content of strontium titanate in the oxide aggregate contains strontium titanate as the oxide aggregate having a negative τε and magnesium titanate as the oxide aggregate having a positive τε. Is 10 to 13% by volume, and the temperature coefficient τε of the dielectric constant at 2 GHz and −40 to 125 ° C. of the glass is 150 to 170 ppm / ° C.,
The average coefficient of thermal expansion at 40 to 290 ° C is 5.5 to 6.
A high frequency dielectric material having a density of 5 × 10 ⁻⁶ deg ⁻¹ and a content of the glass with respect to the entire amount of the oxide aggregate and the glass is 50 to 80% by volume. (4) Containing glass, oxide aggregate having a positive temperature coefficient τε of permittivity, and oxide aggregate having a negative temperature coefficient τε of permittivity (provided that both aluminum oxide and titanium oxide are contained. However, the τε contains strontium titanate as a negative oxide aggregate, and the τε contains aluminum oxide as a positive oxide aggregate, and the content of strontium titanate in the oxide aggregate is 10-15% by volume
And the temperature coefficient τε of the dielectric constant at −40 to 125 ° C. of 2 GHz of the glass is 150 to 170 ppm / ° C., 40
The average coefficient of thermal expansion at 290 ° C. is 5.5 to 6.5 ×
A high frequency dielectric material having a density of 10 ⁻⁶ deg ⁻¹ and a glass content of 50 to 80% by volume with respect to the total amount of the oxide aggregate and glass. (5) Containing glass, oxide aggregate having a positive temperature coefficient τε of permittivity, and oxide aggregate having a negative temperature coefficient τε of permittivity (provided that both aluminum oxide and titanium oxide are contained. However, it contains titanium oxide as an oxide aggregate having a negative τε and magnesium titanate as an oxide aggregate having a positive τε, and the content of titanium oxide in the oxide aggregate is 35%. ˜48% by volume, and the temperature coefficient τ of the dielectric constant of the above glass at 2 GHz and −40 to 125 ° C.
ε is 150 to 170 ppm / ° C., the average thermal expansion coefficient at 40 to 290 ° C. is 5.5 to 6.5 × 10 ⁻⁶ deg ⁻¹ ,
A high frequency dielectric material, wherein the content of the glass with respect to the oxide aggregate and the entire glass is 50 to 80% by volume. (6) the composition of the glass, SiO _2: 50-70 mol%, Al ₂ O _3: 5~20 mol% B ₂ O _3: 10 mol% or less and one or more alkaline earth metal oxides: 25 ˜45 mol%, or SiO ₂ : 50-70 mol%, Al ₂ O ₃ : 5-20 mol%, and one or more alkaline earth metal oxides: 25-45
The high frequency dielectric material according to any one of (1) to (5) above, which is in mol%. (7) the composition of the glass, SiO _2: 50-70 mol%, Al ₂ O _3: 5~20 mol%, B ₂ O _3: 3~1
0 mol% and one or more of alkaline earth metal oxides: 2
The high frequency dielectric material according to (6) above, which is 5 to 45 mol%. (8) Temperature coefficient τε of permittivity is -40 to + 20ppm /
The high frequency dielectric material according to any one of (1) to (7) above, wherein the high temperature dielectric material has a temperature of 0 ° C. (9) The high frequency dielectric material according to any one of (1) to (8), wherein the softening point of the glass is 700 to 900 ° C. (10) A resonator characterized in that a dielectric layer formed by using the high frequency dielectric material according to any one of (1) to (9) is laminated, and a strip line is formed at least between the dielectric layers. (11) Temperature coefficient τε of dielectric constant at -40 to 125 ° C at 2 GHz is 150 to 170 ppm / ° C, 40 to 290 ° C.
Average thermal expansion coefficient at 5.5 to 6.5 × 10 ^-6 deg
^-1 glass, aluminum oxide aggregate, and titanium oxide aggregate, and the glass / (glass + aggregate) amount is 50 to 8
0% by volume and titanium oxide / (titanium oxide + aluminum oxide) amount of 40 to 60% by volume are mixed to obtain a high-frequency dielectric material, and a dielectric layer is laminated using the high-frequency dielectric material. A body is formed, and a strip line made of a conductor material is formed in the laminate and fired to obtain a resonator. The dielectric layer has a temperature coefficient τε of −40 to +20 ppm / ° C. A method for manufacturing a resonator for reducing the coefficient τf. (12) The composition of the glass is as follows: SiO ₂ : 50 to 70 mol%, Al ₂ O ₃ : 5 to 20 mol% B ₂ O ₃ : 10 mol% or less, and one or more alkaline earth metal oxides: 25 ~ 45 mol% or Si
O _2: 50-70 mol%, Al ₂ O _3: 5~20 mol%
And one or more alkaline earth metal oxides: 25 to 45
The method for producing a resonator according to (11) above, wherein the resonator has a softening point of 700 to 900 ° C. in mol%.

[0007]

[0008]

[0009]

[0010]

[0011]

[0012]

[0013]

[0014]

[0015]

[0016]

[0017]

[0018]

[0019]

In the present invention, an oxide aggregate having a positive dielectric constant temperature coefficient τε, an oxide aggregate having a negative τε, and glass are mixed at a predetermined mixing ratio to form a high frequency dielectric material. , Τε of the high frequency dielectric material is brought close to zero. By using such a high frequency dielectric material, the temperature coefficient τf of the resonance frequency of the resonator can be brought close to zero. Therefore, a high-frequency resonator in which fluctuations in resonance frequency due to temperature changes are small even when used in a high-frequency region, for example, at a frequency of 0.5 GHz or higher, is realized.

[0020]

Specific Structure The specific structure of the present invention will be described in detail below.

The high frequency dielectric material of the present invention is 1000 ° C.
Can be fired at a low temperature of about 800 to 1000 ° C., and a frequency of 0.5 GH or more, for example, 0.5 GHz to 2 GH
It is a substrate material of the resonator used in the high frequency region of z,
It contains glass and oxide aggregate. As the oxide aggregate, an oxide aggregate having a positive dielectric constant temperature coefficient τε and an oxide aggregate having a negative τε are used.

Examples of oxide aggregates having a positive τε include magnesium titanate (MgTiO ₃ ), aluminum oxide (Al ₂ O ₃ ), R ₂ Ti ₂ O ₇ (R is one or more lanthanoid elements), Ca ₂ Nb ₂ O ₇ , SrZrO _{3 and the} like can be mentioned, and these may be used alone or in combination of two or more, but among them, MgTiO _{3 is} difficult to react with glass during firing. , Al ₂ O ₃ , R ₂ T
One or more of i ₂ O ₇ and SrZrO ₃ , especially MgTi
O ₃ or Al ₂ O ₃ are preferred. Τε at -40 to 125 ℃ at these 2GHz is 80 to 300ppm / ℃
The τε of MgTiO ₃ is about +100 ppm / ° C, and the τε of Al ₂ O ₃ is about 120 ppm / ° C.

The average coefficient of thermal expansion α at 40 to 290 ° C. is 6 to 12 × 10 ^-6 deg ^-1 , especially ^{6 to 1}
It is about 0 × 10 ⁻⁶ deg ⁻¹ , and α of MgTiO ₃ is 9.
About 7 × 10 ⁻⁶ deg ⁻¹ , α of Al ₂ O ₃ is 7.2 × 10
It is about ^-6 deg ^-1 .

As the oxide aggregate having a negative τε, for example, calcium titanate (CaTiO ₃ ), strontium titanate (SrTiO ₃ ), titanium oxide (TiO 2).
₂ ), SnO ₂ · TiO ₂ , ZrTiO ₄ , Ba ₂ Ti
₉ O ₂₀ , Sr ₂ Nb ₂ O ₇ , SrSnO _{3 and the} like can be mentioned. These may be used alone or in combination of two or more, but among them, it is difficult to react with glass during firing. Therefore, at least one of CaTiO ₃ , SrTiO ₃ and TiO ₂ is preferable. Τε at these 2 GHz is -30 to-
It is about 4000 ppm / ° C., and τε of CaTiO ₃ is −
1600 / ° C, τε of SrTiO ₃ is -3400 /
° C. approximately, Tauipushiron of TiO ₂ is approximately -920ppm / ℃.

The average thermal expansion coefficient α at 40 to 290 ° C. is about ^{6 to} 12 × 10 ^-6 deg ^-1 .
Α of CaTiO ₃ is about 11.2 × 10 ^-6 deg ^-1 , Sr
The α of TiO ₃ is about 9.4 × 10 ⁻⁶ deg ⁻¹ , and the α of TiO ₂ is about 7.1 × 10 ⁻⁶ deg ⁻¹ .

In these cases, the oxide aggregate to be used may have a composition slightly deviated from the stoichiometric composition, or a mixture with a composition deviated from the stoichiometric composition or a mixture of compounds having a composition deviated from each other. Good. Incidentally, Japanese Patent Application Laid-Open No. 4-82297, which is a prior application of this application, describes Al ₂ O ₃ and TiO ₂
It has been proposed that the temperature coefficient τf of the resonance frequency be made small by the combined use with. Therefore, this combination is excluded from the high-frequency dielectric material claimed in this application. However, we will propose a special use method for this combination.

In the present invention, the mixing ratio of the oxide aggregate having a positive τε and the oxide aggregate having a negative τε is not particularly limited, and τε of the oxide aggregate to be used, τε of the glass, and the oxide are used. Depending on the content ratio of aggregate and glass, τ of high frequency dielectric material
It may be appropriately determined so that ε approaches a predetermined value, that is, the temperature coefficient τf of the resonance frequency of the resonator approaches zero.

The average particle size of the oxide aggregate is not particularly limited, but is preferably about 0.5 to 3 μm. If it is less than the above range, it becomes difficult to form a sheet, and if it exceeds the above range, the strength of the resonator element body becomes insufficient.

Since the high frequency dielectric material of the present invention is fired at 1000 ° C. or lower as described above, it is preferable to use glass having a softening point of about 700 to 900 ° C. If the softening point exceeds 900 ° C, firing at a temperature of 1000 ° C or less becomes difficult, and if the softening point is less than 700 ° C, the binder is hard to come off at the time of sheet molding, and the insulating property becomes a problem.

The composition of the glass used is not particularly limited, but the following composition is preferable from the viewpoint of obtaining a high-strength substrate at a firing temperature of 1000 ° C. or lower.

SiO ₂ : 50 to 70 mol% Al ₂ O ₃ : 5 to 20 mol% One or more alkaline earth metal oxides: 25 to 45 mol%, B ₂ O ₃ : 0 to 10 mol%,

In this case, as the alkaline earth metal oxide, it is preferable to use one or more kinds of SrO, CaO and MgO, especially the above-mentioned three kinds in combination, and when using three kinds in combination, the content of SrO is 15. The content of CaO is preferably 30 mol%, the content of CaO is 1 to 8 mol%, and the content of MgO is preferably 1 to 7 mol%.

The glass having such a composition has a temperature of 40 to 290 ° C.
The average coefficient of thermal expansion α is 5.5 to 6.5 × 10 ⁻⁶
deg ^-1 and the temperature coefficient τε of the dielectric constant at a frequency of 2 GHz and -40 to 125 ° C is 150 to 170 ppm / ° C.
It is a degree. The above publication does not disclose how to reduce τε of the dielectric material or the dielectric layer and how to reduce τf of the resonator when such glass is used.

The softening point and the coefficient of thermal expansion α may be measured using a differential thermal dilatometer. Further, τε is obtained by actually manufacturing a dielectric resonator, obtaining the temperature coefficient τf of the resonance frequency, and calculating from the following formula. Formula τε = -2 (τf + α)

In this case, τf is −50, using a constant temperature bath.
The resonance frequency is measured in steps of ℃ to +50 ℃ and 10 ℃. In addition to this, for example, a sample having a predetermined shape of about 1.4 mm square and about 60 mm is prepared, and then the dielectric constant is obtained by the perturbation method.
Τε may be calculated from this. In these cases, α and τε of the oxide aggregate or glass may be measured using a sintered body or glass of the aggregate alone.

The average particle size of the glass is not particularly limited,
Usually, in consideration of moldability and the like, one having a size of about 1 to 2.5 μm is used.

The content of glass with respect to the oxide aggregate and the whole glass is preferably 50 to 80% by volume, particularly preferably 65 to 75% by volume. If the amount is too small, the sinterability deteriorates, and if the amount is too large, the dielectric strength of the dielectric decreases.

When glass (τε> 0) having the above composition is used, when Al ₂ O ₃ aggregate (τε> 0) and TiO ₂ aggregate (τε <0) are used, Al ₂ O ₃ aggregate is used. The content of TiO ₂ aggregate is 4 with respect to the total aggregate and TiO ₂ aggregate.
0 to 60% by volume, particularly 45 to 55% by volume is preferable. T
When the content of iO ₂ aggregate exceeds the above range, too small τε of the high-frequency dielectric materials, for example, less than -40 ppm / ° C., the content of TiO ₂ is less than the above range, the high-frequency dielectric material τε becomes too large, for example, 20ppm /
It exceeds ℃.

Further, an aggregate (τε> 0) of MgTiO ₃ or Al ₂ O ₃ and a CaTiO ₃ aggregate (τε <0) are used. At this time, the CaTiO ₃ content in the oxide aggregate is For the same reason, in the case of MgTiO ₃ ,
30% by volume, and in the case of Al ₂ O ₃ , it is 20 to 33% by volume. Furthermore, an aggregate of MgTiO ₃ or Al ₂ O ₃ (τ
ε> 0) and SrTiO ₃ aggregate (τε <0) are used.
For the same reason, the SrTiO ₃ content in the oxide aggregate is
In the case of MgTiO ₃ , it is 10 to 13 volume%, and in the case of Al ₂ O ₃ , it is 10 to 15 volume%. Furthermore, MgTiO ₃
A combination of aggregate (τε> 0) and TiO ₂ aggregate (τε <0) is also preferable, but the TiO ₂ content in the oxide aggregate is
For the same reason, it is 35 to 48% by volume.

As described above, according to the present invention, τε and α of glass, the content of glass, τε and α of oxide aggregates with τε> 0, and τε and α of oxide aggregates with τε <0. , Τε
By adjusting the volume ratio of the oxide aggregate of> 0 and the oxide aggregate of τε <0 to a predetermined value, τε of the high frequency dielectric material is brought close to a predetermined value, and τf of the resonator is small. And

In this case, the frequency of the high frequency dielectric material is 2 GH.
z, the temperature coefficient τε of the dielectric constant at -40 to 125 ° C is preferably -40 to 20 ppm / ° C, particularly -25 to +5 ppm / ° C, and ideally, according to the equation of τε = -2 (τf + α) It is preferable that τε is such that τf = 0. For example, when the dielectric material α is about 6.0 × 10 ⁻⁶ deg ⁻¹ , τε is −
About 12 ppm / ° C is preferable. Note that τf is -15
It can be up to +15 ppm / ° C, particularly -10 to +10 ppm / ° C, and further -5 to +5 ppm / ° C. Further, the average thermal expansion coefficient α at 40 to 290 ° C. of the dielectric layer or substrate obtained by sintering the high frequency dielectric material of the present invention is 6.3.
˜6.7 × 10 ⁻⁶ deg ⁻¹ and a relative dielectric constant of 8 to 20, especially 8 to 12, and further 10 to 11.

Such a high frequency dielectric material is made into a slurry by adding a vehicle before sintering. As a vehicle,
Ethyl cellulose, polyvinyl butyral, methacrylic resin, binder such as butyl methacrylate, terpineol, butyl carbitol, butyl carbitol acetate, acetate, toluene, alcohol, solvents such as xylene, other various dispersants, activators, plasticizers and the like. Any of these is selected as appropriate according to the purpose. The amount of the vehicle added is preferably about 65 to 85% by weight based on 100 parts by weight of the total amount of the oxide aggregate and the glass.

Next, a voltage controlled oscillator (V having a resonator in which a dielectric layer is formed by using the high frequency dielectric material of the present invention (V
CO) will be described according to the preferred example shown in FIG. 1 is a partial sectional view of the voltage controlled oscillator.

Voltage controlled oscillator 1 using the resonator of the present invention
Is used at a frequency of 0.5 GHz or more, particularly 0.5 to 2 GHz.
It has a laminated body 2 in which 3, 25 and 27 are laminated and integrated, and a strip line 3 is provided at least between the dielectric layers 23 and 25 of this laminated body 2. The shape, size, number, etc. of the strip lines are not particularly limited and may be appropriately determined according to the purpose and the like.

An internal conductor 7 is formed between the dielectric layers 23 and 25, if necessary. In this case, the inner conductor 7
Are formed into desired patterns according to various purposes and uses such as coil conductors and capacitor electrodes.

A ground plane 4 is formed between the dielectric layers 23 and 21 and on the dielectric layer 27. In this case, the strip line 3 is placed between the ground planes 4 and 4.
Position.

An outer conductor 6 is formed on the laminate 2, and the outer conductor 6 and the strip line 3, the ground plane 4, and the inner conductor 7 are electrically connected to each other through the conductors in the through holes 5. Connected.

Strip line 3, ground plane 4,
The internal conductor 7 and the conductor in the through hole 5 are made of Ag or Cu as a main component, particularly Ag in the case of firing in an oxygen-containing atmosphere, for example, air, in order to give priority to good conductivity and the like. Is preferably used.
In addition, the outer conductor 6 is a conductor mainly composed of Ag or Cu from the viewpoint of migration resistance, solder erosion resistance, solder wettability, etc., particularly Ag when firing in an oxygen-containing atmosphere, for example, air, It is preferable to use a conductor containing Pd and / or Pt.

Such a resonator is manufactured, for example, as follows. First, an internal conductor paste and an external conductor paste are prepared. These pastes contain conductive particles, about 1 to 5% by weight of the glass frit with respect to the conductive particles, and a vehicle. Next, a green sheet to be a dielectric layer material is produced. In this case, the slurry of the high frequency dielectric material of the present invention described above is used to prepare a predetermined number of sheets by, for example, the doctor blade method.

Then, through holes 5 are formed on the green sheet by using a punching machine or a die press,
After that, paste the internal conductor paste on each green sheet,
For example, the inner conductor 7, the strip line 3, and the ground plane 4 having a predetermined pattern are printed by screen printing.
And the inside of the through hole 5 is filled.

Then, the green sheets are superposed on each other, and hot press (about 40 to 120 ° C., 50 to 1000 Kgf / cm ² ) is added to form a laminate of the green sheets. Forming etc.

Next, the laminate of green sheets is ordinarily in the air at about 1000 ° C. or less, particularly 800 to 1000 ° C.
Approximately 10 minutes at a temperature of about 10 minutes, and integrated to form the dielectric layer 2
A resonator in which the strip line 3 is formed between 3 and 25 is obtained. Then, the outer conductor paste is printed by a screen printing method or the like and fired to form the outer conductor 6. In this case, preferably, the outer conductors 6 are connected to the dielectric layers 21, 2
It is formed by co-firing with 3, 25, and 27.

After that, a predetermined surface mount component 8 is soldered to the outer conductor 6, and an insulating coating layer is formed if necessary, so that the voltage controlled oscillator (VCO) 1 shown in FIG. 2 is obtained.

The above-mentioned resonator is an example of the present invention,
There is no particular limitation as long as it has a strip line such as a TEM line between dielectric layers and is used at a frequency of 0.5 GHz or more, and various types may be used. In this case, the resonance frequency is usually about 0.5 to 2 GHz. Specifically, the resonator of the present invention can be applied to various filters such as a high-pass filter, a low-pass filter, a band-pass filter, and a band elimination filter, a demultiplexer combining these filters, a diplexer, a voltage-controlled oscillator, and the like. It is possible.

[0055]

EXAMPLES Hereinafter, the present invention will be described in more detail with reference to specific examples of the present invention.

Example 1 Glass particles having an average particle diameter of 1.9 μm: 70% by volume, Al ₂ O ₃ particles having an average particle diameter of 1.5 μm: 15% by volume, and TiO ₂ particles having an average particle diameter of 1.0 μm: 15 volume % High frequency dielectric material No. 1 of the present invention was prepared. Then, a vehicle is added to the high frequency dielectric material 100 parts by weight.
Parts by weight were added, and mixed by a ball mill to form a slurry to obtain a slurry. The vehicle, acrylic resin as a binder, ethyl alcohol and toluene as a solvent,
Phthalates were used as plasticizers. The composition of the glass particles is SiO ₂ : 62 mol%, Al ₂ O ₃ : 8.
Mol%, B ₂ O ₃ : 3 mol%, SrO: 20 mol%, C
aO: 4 mol%, MgO: 3 mol%, and a softening point of 8
It was 15 ° C.

It should be noted that Al ₂ O ₃ , TiO ₂ and glass were separately sintered to obtain α and a relative dielectric constant ε at 2 GHz.
_{When r} and τε were obtained, α of Al ₂ O ₃ was 7.2 × 1
0 ^-6 deg ^-1 , τε is +120 ppm / ° C, ε _r is 9.
8, α of TiO ₂ was 7.1 × 10 ⁻⁶ deg ⁻¹ , and τε was −9.
20ppm / ℃, ε _r is 104, α of glass is 6.0 × 1
0 ^-6 deg ^-1 , τε was +160 ppm / ° C, and ε _r was 6.5.

Using this high frequency dielectric material paste,
A green sheet having a thickness of 0.25 mm was produced by the doctor blade method.

Next, each green sheet was printed with Ag internal conductor paste by a screen printing method to form a strip line and a ground plane, and then laminated by hot pressing to obtain a green sheet laminate. Then, after degreasing this laminated body, it was cofired in air at a temperature of 900 ° C. for 10 minutes.

Then, a ground plane Ag paste is printed by a screen printing method, and the temperature is set to 850 in air.
The sample was fired at 10 ° C. for 10 minutes to obtain a resonator sample No. 1 having a resonance frequency of about 2 GHz. Sample No. 1 dimensions are 10 mm x 1
It was 0 mm x 2 mm.

For comparison, high frequency dielectric material No. 1
In, Al ₂ O ₃ particles: 15% by volume and TiO ₂
High frequency dielectric material No. 2 was obtained in the same manner except that the mixed oxide bone agent of particles: 15% by volume was replaced with Al ₂ O ₃ particles: 30% by volume. Then, in the resonator sample No. 1, except that the high frequency dielectric material No. 2 was used,
A resonator sample No. 2 having a resonance frequency of about 2 GHz was produced. The dimensions of Sample No. 2 were 10 mm x 10 mm x 2 mm.

The temperature coefficient .tau.f of the resonance frequency at -40 to 125.degree. C. of each of the obtained samples was obtained, and it was as shown in Table 1.

Further, the coefficient of thermal expansion α of the dielectric layer obtained by sintering each high-frequency dielectric material was obtained, and the temperature coefficient τε of the dielectric constant was calculated from the following equation. Τε at -40 to 125 ° C and The average thermal expansion coefficient α was as shown in Table 1. Formula: τε = -2 (τf + α)

The frequency of each high frequency dielectric material is 2 GHz.
The relative permittivity ε _r at 25 ° C. was calculated by the perturbation method and was as shown in Table 1.

[0065]

[Table 1]

From the results shown in Table 1, the effect of the present invention is clear.

Example 2 In addition to the Al ₂ O ₃ , TiO ₂ and glass particles of Example 1, an average particle size of 2.0 μm CaTiO ₃ (τε = −16).
00 ppm / ° C., α = 11.2 × 10 ⁻⁶ deg ⁻¹ ), SrTiO _{3 having} an average particle size of 2.0 μm (τε = −3400 ppm /
℃, α = 9.4 × 10 ^-6 deg ^-1 ), average particle size 2.0 μm
MgTiO ₃ (τε = + 100 ppm / ° C., α = 9.7
X 10 ^-6 deg ^-1 ) was used and mixed at the mixing ratio shown in Table 2, and a resonator was obtained in the same manner as in Example 1. The results are shown in Table 2.

[0068]

[Table 2]

From the results shown in Table 2, the effect of the present invention is clear.

[0070]

According to the resonator of the present invention, the fluctuation of the resonance frequency due to the temperature change is small.

[Brief description of drawings]

FIG. 1 is a partial sectional view showing a voltage controlled oscillator using a resonator of the present invention.

FIG. 2 is a perspective view showing a voltage controlled oscillator using the resonator of the present invention.

[Explanation of symbols]

1 Voltage controlled oscillator 2 laminate 21, 23, 25, 27 Dielectric layer 3 strip lines 4 ground plane 5 through holes 6 outer conductor 7 Inner conductor 8 Surface mount components

─────────────────────────────────────────────────── ─── Continuation of front page (58) Fields surveyed (Int.Cl. ⁷ , DB name) H01B 3/02 C04B 35/495 H01P 7/10 H01P 11/00

Claims (12)

(57) [Claims] 1. Containing glass, oxide aggregate having a positive dielectric constant temperature coefficient τε, and oxide aggregate having a negative dielectric constant temperature coefficient τε (provided that both aluminum oxide and titanium oxide are used together). Calcium titanate as an oxide aggregate having a negative τε,
Further, the τε contains magnesium titanate as a positive oxide aggregate, the content of calcium titanate in the oxide aggregate is 20 to 30% by volume, and the glass at 2 GHz, at -40 to 125 ° C. Dielectric constant temperature coefficient τε is 150-170ppm / ℃, 40-290
Average thermal expansion coefficient at ℃ 5.5-6.5 × 10 ^-6 de
The high frequency dielectric material is g ⁻¹ , and the content of the glass with respect to the total amount of the oxide aggregate and the glass is 50 to 80% by volume. 2. Containing glass, oxide aggregate having a positive temperature coefficient τε of permittivity, and oxide aggregate having a negative temperature coefficient τε of permittivity (provided that both aluminum oxide and titanium oxide are included). Calcium titanate as an oxide aggregate having a negative τε,
Further, the τε contains aluminum oxide as a positive oxide aggregate, the content of calcium titanate in the oxide aggregate is 20 to 33% by volume, and the dielectric constant of the glass at 2 GHz and -40 to 125 ° C. Coefficient of temperature τε is 150-170ppm / ℃, 40-290
Average thermal expansion coefficient at ℃ 5.5-6.5 × 10 ^-6 de
g ^-1 , and the content of the glass with respect to the total amount of the oxide aggregate and the glass is 50 to 80%, and the high frequency dielectric material. 3. Containing glass, an oxide aggregate having a positive dielectric constant temperature coefficient τε, and an oxide aggregate having a negative dielectric constant temperature coefficient τε (provided that both aluminum oxide and titanium oxide are included). Τε is a negative oxide aggregate, strontium titanate as a negative oxide aggregate, and τε contains magnesium titanate as a positive oxide aggregate, and strontium titanate in the oxide aggregate is contained. The content is 10 to 13% by volume, and the temperature coefficient τε of the dielectric constant at 2 GHz and -40 to 125 ° C of the glass is 150 to 170 ppm / ° C, 40 to 290.
Average thermal expansion coefficient at ℃ 5.5-6.5 × 10 ^-6 de
g- ¹ and the content of the glass with respect to the total amount of the oxide aggregate and the glass is 50 to 80% by volume. 4. Containing glass, an oxide aggregate having a positive temperature coefficient τε of dielectric constant, and an oxide aggregate having a negative temperature coefficient τε of dielectric constant (provided that both aluminum oxide and titanium oxide are used together). Strontium titanate as a negative oxide aggregate of τε, and aluminum oxide as a positive oxide aggregate of τε, and the inclusion of strontium titanate in the oxide aggregate. The amount is 10 to 15% by volume, and the temperature coefficient τε of the dielectric constant at 2 GHz and -40 to 125 ° C of the glass is 150 to 170 ppm / ° C, 40 to 290.
Average thermal expansion coefficient at ℃ 5.5-6.5 × 10 ^-6 de
g- ¹ and the content of the glass with respect to the total amount of the oxide aggregate and the glass is 50 to 80% by volume. 5. Containing glass, an oxide aggregate having a positive temperature coefficient of permittivity τε, and an oxide aggregate having a negative temperature coefficient of permittivity τε (provided that both aluminum oxide and titanium oxide are used together). Content of titanium oxide in the oxide aggregate, wherein τε contains titanium oxide as a negative oxide aggregate, and τε contains magnesium titanate as a positive oxide aggregate. Is 35-48
% By volume, and the temperature coefficient τε of the dielectric constant at 2 GHz and -40 to 125 ° C of the glass is 150 to 170 ppm / ° C and 40 to 290.
Average thermal expansion coefficient at ℃ 5.5-6.5 × 10 ^-6 de
g- ¹ and the content of the glass with respect to the total amount of the oxide aggregate and the glass is 50 to 80% by volume. 6. The composition of the glass is SiO ₂ : 50 to 70 mol%, Al ₂ O ₃ : 5 to 20 mol%, B ₂ O ₃ : 10 mol% or less, and one or more kinds of alkaline earth metal oxides. : 25 to 45 mol%, or SiO ₂ : 50 to 70 mol%, Al ₂ O ₃ : 5 to 20 mol%, and one or more kinds of alkaline earth metal oxides: 25 to 45
The high frequency dielectric material according to claim 1, wherein the high frequency dielectric material is mol%. 7. The composition of the glass is SiO ₂ : 50-.
70 mol%, Al ₂ O ₃ : 5 to 20 mol%, B ₂ O ₃ :
7. The high frequency dielectric material according to claim 6, which is 3 to 10 mol% and one or more kinds of alkaline earth metal oxides: 25 to 45 mol%. 8. The temperature coefficient τε of the dielectric constant is −40 to +2.
The high frequency dielectric material according to any one of claims 1 to 7, which has a concentration of 0 ppm / ° C. 9. The softening point of the glass is 700 to 900 ° C.
9. The high frequency dielectric material according to any one of claims 1 to 8. 10. A resonator comprising a stack of dielectric layers formed by using the high frequency dielectric material according to claim 1, and a strip line formed at least between the dielectric layers. 11. A temperature coefficient τε of a dielectric constant at 2 GHz, -40 to 125 ° C. is 150 to 170 ppm / ° C., 40 to 2
Average thermal expansion coefficient at 90 ° C. is 5.5 to 6.5 × 10
^-6 deg ^-1 glass, aluminum oxide aggregate and titanium oxide aggregate, glass / (glass + aggregate) amount of 50-80% by volume, titanium oxide / (titanium oxide + aluminum oxide) amount Is 40-
A high frequency dielectric material is obtained by mixing so as to be 60% by volume, a dielectric layer laminate is formed using this high frequency dielectric material, and a strip line of a conductor material is formed in the laminate. A method of manufacturing a resonator in which the temperature coefficient τf of the dielectric constant is −40 to +20 ppm / ° C. and the temperature coefficient τf of the resonance frequency is lowered as a dielectric layer. 12. The composition of the glass is SiO ₂ : 50 to 70 mol%, Al ₂ O ₃ : 5 to 20 mol%, B ₂ O ₃ : 10 mol% or less, and one or more kinds of alkaline earth metal oxides. : 25-45 mol% or Si
O _2: 50-70 mol%, Al ₂ O _3: 5~20 mol%
And one or more alkaline earth metal oxides: 25 to 45
The method for manufacturing a resonator according to claim 11, wherein the softening point is mol% and the softening point is 700 to 900 ° C.