JP3411079B2 - How to clean a clean room - Google Patents
How to clean a clean roomInfo
- Publication number
- JP3411079B2 JP3411079B2 JP03072794A JP3072794A JP3411079B2 JP 3411079 B2 JP3411079 B2 JP 3411079B2 JP 03072794 A JP03072794 A JP 03072794A JP 3072794 A JP3072794 A JP 3072794A JP 3411079 B2 JP3411079 B2 JP 3411079B2
- Authority
- JP
- Japan
- Prior art keywords
- gas
- water
- clean room
- acid
- reaction chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Description
【発明の詳細な説明】
【０００１】
【産業上の利用分野】本発明は、半導体製造工場のクリ
ーンルーム内のクリーン化方法に関する。近年の半導体
製造工場のクリーンルームでは、半導体製品の微細加工
技術により、微細なゴミ等のパーティクルの付着でも、
製品歩留りの低下をもたらす為、このゴミ等のパーティ
クルをほとんど無くすためのクリーン化が要求されてお
り、クリーンルーム内のパーティクルの発生およびその
原因を根絶する必要がある。
【０００２】また、半導体製造工場における腐食性ガス
使用後の排気系の除害装置において、使用ガスを混用し
て除害出来ず、腐食・破損・爆発等の事故を発生させる
要因となっており、その為にガスの種類を選択すること
なく、安全に除害を行う必要がある。
【０００３】
【従来の技術】図３は従来例の説明図である。図におい
て、２は反応室、14はガス導入ライン、17は真空排気ラ
イン、20は開放窓である。
【０００４】従来の半導体製造工場のクリーンルームの
クリーン化方法においては、工場内に設置してある空調
システム＋高精密エアフィルタでクリーンルームのクリ
ーン度を保持していた。
【０００５】ところが、図３に示すように、クリーンル
ーム内に設置されている半導体製造装置において、腐食
性ガスを使用後の装置の反応室４よりパーティクル、ま
たはパーティクルの核になる微粒子の発生が近年確認さ
れており、その数は１回に、０.2μｍ以上のパーティク
ルが 5,000〜9,000 個も発生している。
【０００６】これにより、現状の工場システムだけでは
クリーン度の保持が難しく、更にクリーンルーム内のク
リーン度の向上が出来なくなっていた。また、従来の腐
食性ガスの除害処理は、活性炭等の吸着方式を使用して
いたが、除害処理装置の容量がなくて腐食性ガスを溜め
込み、破損・腐食等の障害を起こしていた。
【０００７】
【発明が解決しようとする課題】従って、半導体製造工
場のクリーンルーム内のパーティクルによって、半導体
製品の不良の発生による歩留り低下、クリーンルーム内
の汚染、腐食性ガスの取扱に起因する腐食・破損・爆発
等の障害や事故といった問題を生じていた。
【０００８】本発明は、以上の点を鑑み、半導体製造工
場のクリーンルーム内におけるパーティクルの発生源を
根絶し、除害処理装置を新方式にして破損・腐食等の障
害をなくすことを目的として提供される。
【０００９】
【課題を解決するための手段】図１は本発明の原理説明
図である。図において、１はクリーンルーム、２は反応
室、３は水或いは水蒸気、４は水・水蒸気導入ライン、
５はプロセスガスならびに反応生成物、６は酸系ガス、
７は除害処理装置、８は循環水中和処理装置、９は除害
システム、10は酸排気、11は処理水、12は酸系排気ライ
ン、13は循環水、14はガス導入ライン、15はプロセスガ
ス、16はガス排気ライン、17は真空排気ライン、18はフ
ィルタ、19はバルブ、20は開放窓、21は酸排水ライン、
22は真空ポンプである。
【００１０】図１に示したように、除害システム９は、
循環水13を使用した除害処理装置７と循環水中和処理装
置８とで構成されている。ドライエッチング装置等の反
応室２をクリーンルーム１内で開放する際に、反応室２
内から流出するプロセスガスならびに反応生成物５に起
因するパーティクルおよびパーティクルの核を、水・水
蒸気導入ライン４より水或いは水蒸気３を引き入れて、
水との接触方式によって除去し、その際に発生する酸系
ガス６を、ガス排気ライン16を使用し、真空排気ライン
17を閉じて、除害システム９を通し、酸排気10は酸系排
気ライン12を経由して工場の酸排気ダクトに、処理水11
は酸排水ライン21を経由して工場排水処理装置に送る。
【００１１】すなわち、本発明の目的は、図１に示すよ
うに、クリーンルーム１内に設置した半導体製造装置の
反応室２をクリーンルーム１内で開放する前に、反応室
２内に水或いは水蒸気３を水・水蒸気導入ライン４から
送り込み、反応室２から排出されるプロセスガスならび
に反応生成物５を水或いは水蒸気４と接触させて酸系ガ
ス６として反応室２から排気し、除害処理装置７と循環
水中和処理装置８からなる除害システム９で処理し、酸
排気10ならびに処理水11として外部に排出することによ
り達成される。
【００１２】
【作用】本発明では、図１に示すように、反応室に導入
した水及び水蒸気がプロセスガスならびに反応生成物に
起因するパーティクルやパーティクルの核と接触し、水
と一緒にガス排気ラインに流れる。
【００１３】この時、酸系のガスが発生するため、除害
システムの除外処理装置において循環水に酸系のガスを
溶け込ませて、酸排気を酸排気ダクトに送る。また、汚
れた処理水自体は、除害システムの循環水中和処理装置
において薬品により中和されて排水処理装置に送る。
【００１４】従って、クリーンルーム内でエッチング装
置の反応室内雰囲気を大気に開放しても、クリーンルー
ム内にパーティクルやパーティクルの核は流出しない。
【００１５】
【実施例】図１は本発明の原理説明図であり、本発明の
除害システムの概要図である。図２は本発明の一実施例
の説明図であり、除害システムの内部構造を示す断面図
である。
【００１６】図において、１はクリーンルーム、２は反
応室、３は水或いは水蒸気、４は水・水蒸気導入ライ
ン、５はプロセスガスならびに反応生成物、６は酸系ガ
ス、７は除害処理装置、８は循環水中和処理装置、９は
除害システム、10は酸排気、11は処理水、12は酸系排気
ライン、13は循環水、14はガス導入ライン、15はプロセ
スガス、16はガス排気ライン、17は真空排気ライン、18
はフィルタ、19はバルブ、20は開放窓、21は酸排水ライ
ン、22は真空ポンプ、23は羽根、24はモータ、25〜27は
第１段〜第３段中和薬品投入口である。
【００１７】本発明の一実施例を図１ならびに図２によ
り説明する。ＲＩＥ装置等の各種ドライエッチング装置
に用いるプロセスガスとして、臭化水素（ＨＢｒ）、塩
素（Ｃｌ2 ）、酸素（Ｏ2 ）、三塩化硼素（ＢＣｌ
３）、四塩化珪素（ＳｉＣｌ４）ガス等を用い、装置の
ＲＦ電源で３０時間以上半導体基板上の薄膜等のエッチ
ング処理を行った後、処理した反応室２内を半導体基板
の交換や反応室内の整備・清掃のため、クリーンルーム
１内で開放すると、従来は、通常０．２μｍ以上のパー
ティクルが5,000 〜9,000 個発生し、クリーンルーム１
内に流出していた。
【００１８】本発明の一実施例では、図１に示す反応室
２内に水・水蒸気導入ライン４から水或いは水蒸気３を
１，５００〜３，５００ｃｃ／ｍｉｎ導入し、反応室２
側の圧力制御を５００〜７００Ｔｏｒｒに設定し、真空
ポンプ22を作動して排気しながら、２０〜４０分間、反
応室２内のパーティクルと水の接触方式によって、反応
室２内のプロセスガスならびに反応生成物５をガス排気
ライン16に酸系ガス６として流し、本発明の除害ヒステ
ムに送る。
【００１９】図２に示す除害システム９において、上述
の状態で反応室２から送りこまれた参詣ガス６は、除外
処理装置７と循環水中和処理装置８を用いて同時に酸排
気10と処理水11の除害処理を行う。
【００２０】すなわち、図２に示すように、循環水13を
１２ｌ／ｍｉｎ流し、圧力８ｋｇ／ｃｍ2 で除害処理す
る。除害処理装置７のタンク内には循環水13が充満して
おり、攪拌用の羽根23はモーター24で３，０００回転／
ｍｉｎの早さで回転している。
【００２１】除害処理装置７からの酸排気10は酸系排気
ライン12を経由してクリーンルーム１内から天井裏にあ
る工場の酸排気ダクトに送られる。この酸排気10を図２
に示したＡの場所でディテクタにより排気ガス濃度を測
定した結果、Ｂｒ、Ｃｌ2 共に０ｐｐｍであった。
【００２２】除害処理装置７で処理した酸が溶け込んだ
循環水13は循環水中和処理装置8 に送られ、硫酸や苛性
ソーダ等の中和薬品を第１段〜第３段の中和薬品投入口
25〜27より必要量を順次投入して、処理水11を第１段、
第２段、第３段と順次、循環水中和処理装置８内で中和
を繰り返した後、ＰＨ７の処理水11として、酸排水ライ
ン21を経由してクリーンルーム１内から、外の工場排水
処理装置に送られる。この処理水11を図２に示したＢの
場所でディテクタによりイオン濃度を測定した結果、Ｂ
ｒ、Ｃｌ2 共０ｐｐｍであった。
【００２３】上記実施例ではプロセスガスとして塩素並
びに臭素系反応ガスを用いたが、六弗化硫黄（ＳＦ6 ）
等の弗素系反応ガスを用いた場合も弗素処理用の除害装
置を用いて、同様の効果が確認された。
【００２４】
【発明の効果】以上説明したように、本発明によれば、
クリーンルーム内に流出するパーティクル及びパーティ
クルの核を防止する効果が上がり、反応室を常圧に戻し
て開放する際にパーティクルカウンタで測定した結果、
０.2μｍ以上のパーティクルが２〜９個と大巾に減少し
た。
【００２５】また、新方式による除害処理により、安全
性の高い定期交換の要らない腐食性ガスの除害効果が得
られ、一年以上経過しても、デイテクタの測定結果は０
ｐｐｍであった。
【００２６】これにより、新方式による半導体製造工場
のクリーンルーム内及び除害装置やエッチング装置のク
リーン化に寄与するところが大きい。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for cleaning a clean room of a semiconductor manufacturing plant. In the clean room of semiconductor manufacturing plants in recent years, even if particles such as fine dust adhere to
In order to reduce the product yield, it is required to clean the surface to almost eliminate particles such as dust, and it is necessary to eradicate the generation of particles in a clean room and its cause. Further, in an exhaust gas abatement system after using a corrosive gas in a semiconductor manufacturing plant, it is not possible to abate the gas by mixing the used gas, which causes accidents such as corrosion, damage, explosion and the like. Therefore, it is necessary to safely perform detoxification without selecting the type of gas. FIG. 3 is an explanatory view of a conventional example. In the figure, 2 is a reaction chamber, 14 is a gas introduction line, 17 is a vacuum exhaust line, and 20 is an open window. In a conventional method of cleaning a clean room in a semiconductor manufacturing plant, the cleanness of the clean room is maintained by an air conditioning system and a high-precision air filter installed in the plant. However, as shown in FIG. 3, in a semiconductor manufacturing apparatus installed in a clean room, particles or fine particles which become nuclei of the particles have recently been generated from the reaction chamber 4 of the apparatus after using a corrosive gas. It has been confirmed that 5,000 to 9,000 particles of 0.2 μm or more are generated at one time. As a result, it has been difficult to maintain the cleanliness only with the current factory system alone, and it has been impossible to improve the cleanliness in the clean room. In addition, the conventional abatement treatment of corrosive gas uses an adsorption method of activated carbon or the like, but the capacity of the abatement treatment device is lacking, so that the corrosive gas is stored and damages and corrosion are caused. . [0007] Therefore, particles in a clean room of a semiconductor manufacturing plant cause a decrease in yield due to the occurrence of defective semiconductor products, contamination in the clean room, and corrosion and damage caused by handling corrosive gas. -Problems such as obstacles such as explosions and accidents occurred. The present invention has been made in view of the above points, and has as its object to eradicate a source of particles in a clean room of a semiconductor manufacturing plant and to use a new detoxification apparatus to eliminate obstacles such as breakage and corrosion. Is done. FIG. 1 is a diagram illustrating the principle of the present invention. In the figure, 1 is a clean room, 2 is a reaction room, 3 is water or steam, 4 is a water / steam introduction line,
5 is a process gas and a reaction product, 6 is an acid-based gas,
7 is a harm removal treatment device, 8 is a circulating water neutralization treatment device, 9 is a harm removal system, 10 is acid exhaust, 11 is treated water, 12 is an acid exhaust line, 13 is circulating water, 14 is a gas introduction line, 15 Is a process gas, 16 is a gas exhaust line, 17 is a vacuum exhaust line, 18 is a filter, 19 is a valve, 20 is an open window, 21 is an acid drain line,
22 is a vacuum pump. As shown in FIG. 1, the abatement system 9 comprises:
It is composed of a harm removal treatment device 7 using circulating water 13 and a circulating water neutralization treatment device 8. When the reaction chamber 2 such as a dry etching apparatus is opened in the clean room 1,
The process gas flowing out from the inside and the particles caused by the reaction products 5 and the nuclei of the particles are drawn into water or steam 3 from the water / steam introduction line 4,
A gas exhaust line 16 is used to remove the acid-based gas 6 generated by the contact method with water.
17 is closed, the acid exhaust gas 10 passes through the abatement system 9, and the acid exhaust gas 10 passes through the acid exhaust line 12 to the acid exhaust duct of the factory, and the treated water 11
Is sent to the factory wastewater treatment device via the acid wastewater line 21. That is, as shown in FIG. 1, the object of the present invention is to provide a semiconductor manufacturing apparatus installed in a clean room 1 with water or steam 3 before opening the reaction room 2 in the clean room 1. Is fed from the water / steam introduction line 4, and the process gas and the reaction product 5 discharged from the reaction chamber 2 are brought into contact with water or steam 4 and exhausted from the reaction chamber 2 as an acid-based gas 6, and the detoxification apparatus 7 The treatment is carried out by a detoxification system 9 comprising a circulating water neutralization treatment device 8 and discharged as acid exhaust 10 and treated water 11 to the outside. In the present invention, as shown in FIG. 1, water and water vapor introduced into the reaction chamber come into contact with process gas and particles or particle nuclei caused by reaction products, and gas is exhausted together with the water. Flow on the line. At this time, an acid-based gas is generated, so that the acid-based gas is dissolved in the circulating water in the elimination treatment device of the abatement system, and the acid exhaust gas is sent to the acid exhaust duct. Further, the contaminated treated water itself is neutralized by a chemical in a circulating water neutralizing treatment device of the abatement system and sent to a wastewater treatment device. Therefore, even if the atmosphere in the reaction chamber of the etching apparatus is opened to the atmosphere in the clean room, particles and nuclei of the particles do not flow into the clean room. FIG. 1 is an explanatory view of the principle of the present invention, and is a schematic diagram of an abatement system of the present invention. FIG. 2 is an explanatory view of one embodiment of the present invention, and is a cross-sectional view showing an internal structure of the abatement system. In the figure, 1 is a clean room, 2 is a reaction chamber, 3 is water or steam, 4 is a water / steam introduction line, 5 is a process gas and a reaction product, 6 is an acid-based gas, and 7 is a detoxification apparatus. , 8 is a circulating water neutralization device, 9 is a detoxification system, 10 is acid exhaust, 11 is treated water, 12 is an acid exhaust line, 13 is circulating water, 14 is a gas introduction line, 15 is a process gas, and 16 is a process gas. Gas exhaust line, 17 is vacuum exhaust line, 18
Is a filter, 19 is a valve, 20 is an open window, 21 is an acid drainage line, 22 is a vacuum pump, 23 is a blade, 24 is a motor, and 25 to 27 are first to third stage neutralizing chemical inlets. An embodiment of the present invention will be described with reference to FIGS. Process gases used in various dry etching apparatuses such as an RIE apparatus include hydrogen bromide (HBr), chlorine (Cl 2 ), oxygen (O 2 ), boron trichloride (BCl
3) After etching a thin film on a semiconductor substrate for at least 30 hours with an RF power supply of the apparatus using silicon tetrachloride (SiCl4) gas or the like, the inside of the processed reaction chamber 2 is replaced with a semiconductor substrate or the reaction chamber. Conventionally, when the interior of the clean room 1 is opened for maintenance and cleaning, 5,000 to 9,000 particles having a size of 0.2 μm or more are usually generated.
Had spilled into. In one embodiment of the present invention, water or steam 3 is introduced into the reaction chamber 2 shown in FIG.
The pressure control on the side is set to 500 to 700 Torr, and while the vacuum pump 22 is being operated to evacuate, the process gas and the reaction gas in the reaction chamber 2 are contacted with the particles in the reaction chamber 2 for 20 to 40 minutes by water. The product 5 flows into the gas exhaust line 16 as an acid-based gas 6 and is sent to the abatement system of the present invention. In the abatement system 9 shown in FIG. 2, the refrigeration gas 6 sent from the reaction chamber 2 in the above-described state is simultaneously removed from the acid exhaust 10 and the treated water using the exclusion treatment device 7 and the circulating water neutralization treatment device 8. Perform 11 abatement treatments. That is, as shown in FIG. 2, circulating water 13 is supplied at a flow rate of 12 l / min, and detoxification is performed at a pressure of 8 kg / cm 2 . The tank of the abatement system 7 is filled with circulating water 13, and the stirring blade 23 is rotated 3,000 times by the motor 24.
It rotates at the speed of min. The acid exhaust 10 from the abatement system 7 is sent from the clean room 1 to an acid exhaust duct in a factory located behind the ceiling via an acid exhaust line 12. Fig. 2
As a result of measuring the exhaust gas concentration by the detector at the location A shown in the above, both Br and Cl 2 were 0 ppm. The circulating water 13 in which the acid treated in the detoxification treatment device 7 is dissolved is sent to the circulating water neutralization treatment device 8, where neutralizing chemicals such as sulfuric acid and caustic soda are charged in the first to third neutralizing chemicals. mouth
The required amount is sequentially charged from 25 to 27, and the treated water 11 is
After repeating the neutralization in the circulating water neutralization treatment device 8 in order from the second stage to the third stage, the treated water 11 of PH7 is discharged from the clean room 1 through the acid drainage line 21 to the outside factory wastewater treatment. Sent to the device. As a result of measuring the ion concentration of this treated water 11 at the location B shown in FIG.
Both r and Cl 2 were 0 ppm. In the above embodiment, chlorine and bromine-based reaction gas were used as the process gas, but sulfur hexafluoride (SF 6 ) was used.
When a fluorine-based reaction gas such as that described above was used, a similar effect was confirmed using a detoxification apparatus for fluorine treatment. As described above, according to the present invention,
The effect of preventing particles flowing out into the clean room and the nuclei of the particles is increased, and as a result of measuring with a particle counter when the reaction chamber is returned to normal pressure and opened,
Particles having a size of 0.2 μm or more were greatly reduced to 2 to 9 particles. In addition, the new method of detoxification provides a safe and highly effective detoxifying effect for corrosive gas which does not require periodic replacement.
ppm. This greatly contributes to cleanliness in a clean room of a semiconductor manufacturing plant and a detoxification apparatus and an etching apparatus according to the new method.
【図面の簡単な説明】 【図１】 本発明の原理説明図 【図２】 本発明の一実施例の説明図 【図３】 従来例の説明図 【符号の説明】 図において １ クリーンルーム ２ 反応室 ３ 水或いは水蒸気 ４ 水・水蒸気導入ライン ５ プロセスガスならびに反応生成物 ６ 酸系ガス ７ 除害処理装置 ８ 循環水中和処理装置 ９ 除害システム 10 酸排気 11 処理水 12 酸系排気ライン 13 循環水 14 ガス導入ライン 15 プロセスガス 16 ガス排気ライン 17 真空排気ライン 18 フィルタ 19 バルブ 20 開放窓 21 酸排水ライン 22 真空ポンプ 23 羽根 24 モータ 25 第１段中和薬品投入口 26 第２段中和薬品投入口 27 第３段中和薬品投入口[Brief description of the drawings] FIG. 1 is a diagram illustrating the principle of the present invention. FIG. 2 is an explanatory view of one embodiment of the present invention. FIG. 3 is an explanatory view of a conventional example. [Explanation of symbols] In the figure 1 clean room 2 Reaction chamber 3 water or steam 4 Water / steam introduction line 5 Process gas and reaction products 6 acid gas 7 Abatement equipment 8 Circulating water neutralization equipment 9 Abatement system 10 Acid exhaust 11 Treated water 12 Acid exhaust line 13 Circulating water 14 Gas introduction line 15 Process gas 16 Gas exhaust line 17 Vacuum exhaust line 18 Filter 19 valve 20 Open window 21 Acid drainage line 22 Vacuum pump 23 feather 24 motor 25 1st stage neutralizing chemical inlet 26 Second stage neutralizing chemicals inlet 27 Third stage neutralizing chemical inlet
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7，ＤＢ名) F24F 7/04 - 7/06 ──────────────────────────────────────────────────続 き Continued on front page (58) Field surveyed (Int.Cl. 7 , DB name) F24F 7/ 04-7/06
Claims (1)
製造装置の反応室(2) を該クリーンルーム(1) 内で開放
する前に、該反応室(2) 内に水或いは水蒸気(3) を水・
水蒸気導入ライン(4) から送り込み、該反応室(2) から
排出されるプロセスガスならびに反応生成物(5) を該水
或いは水蒸気(4) と接触させて酸系ガス(6) として該反
応室(2) から排気し、除害処理装置(7) と循環水中和処
理装置(8) からなる除害システム(9) で処理し、酸排気
(10)ならびに処理水(11)として外部に排出することを特
徴とするクリーンルームのクリーン化方法。(57) [Claims] [Claim 1] Before opening a reaction chamber (2) of a semiconductor manufacturing apparatus installed in a clean room (1) in the clean room (1), the reaction chamber (2) is opened. Water or steam (3)
The process gas and the reaction product (5) sent from the steam introduction line (4) and discharged from the reaction chamber (2) are brought into contact with the water or steam (4) to form an acid-based gas (6). Exhausted from (2), treated by abatement system (9) consisting of abatement system (7) and circulating water neutralization unit (8), and acid exhaust
(10) and a method for cleaning a clean room, wherein the treated water (11) is discharged to the outside.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP03072794A JP3411079B2 (en) | 1994-03-01 | 1994-03-01 | How to clean a clean room |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP03072794A JP3411079B2 (en) | 1994-03-01 | 1994-03-01 | How to clean a clean room |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH07243681A JPH07243681A (en) | 1995-09-19 |
| JP3411079B2 true JP3411079B2 (en) | 2003-05-26 |
Family
ID=12311702
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP03072794A Expired - Lifetime JP3411079B2 (en) | 1994-03-01 | 1994-03-01 | How to clean a clean room |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3411079B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201247334A (en) * | 2011-05-18 | 2012-12-01 | Auria Solar Co Ltd | Method for cleaning deposition chamber |
-
1994
- 1994-03-01 JP JP03072794A patent/JP3411079B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH07243681A (en) | 1995-09-19 |
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