JP3409007B2 - Method of manufacturing concentrating solar power generation device - Google Patents

Method of manufacturing concentrating solar power generation device

Info

Publication number
JP3409007B2
JP3409007B2 JP2000018044A JP2000018044A JP3409007B2 JP 3409007 B2 JP3409007 B2 JP 3409007B2 JP 2000018044 A JP2000018044 A JP 2000018044A JP 2000018044 A JP2000018044 A JP 2000018044A JP 3409007 B2 JP3409007 B2 JP 3409007B2
Authority
JP
Japan
Prior art keywords
power generation
light
generation device
photovoltaic element
photovoltaic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2000018044A
Other languages
Japanese (ja)
Other versions
JP2001210847A (en
Inventor
芳徳 宮村
義昭 矢澤
強志 上松
謙 筒井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2000018044A priority Critical patent/JP3409007B2/en
Publication of JP2001210847A publication Critical patent/JP2001210847A/en
Application granted granted Critical
Publication of JP3409007B2 publication Critical patent/JP3409007B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/52PV systems with concentrators

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】本発明は、太陽光を集光し、太陽エネルギ
ーを電気エネルギーに変換する集光型太陽光発電装置
製造方法に関する。
[0001] The present invention relates to a concentrating solar power generation device for concentrating sunlight and converting solar energy into electric energy .
It relates to a manufacturing method .

【0002】[0002]

【従来の技術】従来の太陽光発電装置は、約10センチ
角のシリコン発電素子をできるだけ隙間なく配列し、隙
間に入射した光のロスを極力小さくする構造とするか、
或いは素子間にわずかな隙間を設け、そこに入射した光
をその隙間に配置した光散乱板により散乱させてその一
部を素子でとらえ、発電に寄与させる構造としている。
いずれも、シリコン素材の発電素子をほぼ全面に敷き詰
めており、その分高価な素子を多数必要としている。な
お、これらの技術は、例えば、特開平10−28474
7号公報に開示されている。
2. Description of the Related Art A conventional photovoltaic power generator has a structure in which silicon power generating elements of about 10 cm square are arranged as closely as possible to minimize the loss of light entering the gap.
Alternatively, a small gap is provided between the elements, and light incident on the element is scattered by a light scattering plate disposed in the gap, and a part of the light is captured by the element to contribute to power generation.
In each case, power generating elements made of a silicon material are laid almost all over the surface, and a correspondingly large number of expensive elements are required. These techniques are described in, for example, Japanese Patent Application Laid-Open No. 10-28474.
No. 7 discloses this.

【0003】[0003]

【発明が解決しようとする課題】上記従来技術では、高
価なシリコン発電素子を全面に敷き詰めており、発電装
置の製造コストは高く、広く一般に普及させるためには
コスト低減させることが好ましいといわれている。
In the above prior art, it is said that expensive silicon power generating elements are laid all over the surface, the production cost of the power generation device is high, and it is preferable to reduce the cost for widespread use. I have.

【0004】本発明の目的は 低コストの集光型太陽光
発電装置の製造方法を提供することにある。
[0004] It is an object of the present invention to provide a low-cost concentrating solar light.
An object of the present invention is to provide a method for manufacturing a power generation device.

【0005】上記目的を達成するために、本発明の集光
型太陽光発電装置は、透明基板と、その上に配置された
表面に凹部を有する光透過性素材と、光透過性部素材の
凹部内に配置された光発電素子と、光発電素子上に配置
された、断面がV字形状をした光反射板とより構成する
ようにしたものである。
In order to achieve the above object , a concentrating solar power generation device according to the present invention comprises a transparent substrate, a light-transmitting material having a concave portion on a surface disposed thereon, and a light-transmitting portion material. A photovoltaic element arranged in the concave portion and a light reflector having a V-shaped cross section are arranged on the photovoltaic element.

【0006】この太陽光発電装置で光発電素子とそれに
隣接する光発電素子の間隔は、光発電素子の幅1に対し
て0.3から1の範囲とすることが好ましく、0.5か
ら0.7の範囲とすることがより好ましい。また、光反
射板のV字の開き角度は、115度から125度の範囲
とすることが好ましく、118度から122度の範囲と
することがより好ましい。
The distance between the photovoltaic element and the photovoltaic element adjacent to the photovoltaic element is preferably in the range of 0.3 to 1 with respect to the width 1 of the photovoltaic element. .7 is more preferable. Further, the opening angle of the V-shape of the light reflecting plate is preferably in the range of 115 to 125 degrees, and more preferably in the range of 118 to 122 degrees.

【0007】上記目的を達成するために、本発明の集光
型太陽光発電装置の製造方法は、透明基板の上に、表面
に凹部を有する第1の光透過性素材が配置された部材を
準備し、第1の光透過性素材の上記凹部内に光発電素子
を配置し、この光発電素子上に、第2の光透過性素材を
介して断面がV字形状をした光反射板を配置し、これら
を一体に接着させるようにしたものである。
In order to achieve the above object , a method for manufacturing a concentrator photovoltaic power generation device according to the present invention comprises a method of manufacturing a concentrator photovoltaic device, comprising: Prepare, place a photovoltaic element in the concave portion of the first light transmitting material, and place a light reflecting plate having a V-shaped cross section on the photovoltaic element via the second light transmitting material. They are arranged so that they are integrally bonded.

【0008】この太陽光発電装置の製造方法で、光発電
素子とそれに隣接する光発電素子との間隔の好ましい範
囲や、光反射板のV字の開き角度の好ましい範囲は、上
述と同じである。第1の光透過性部素材、第2の光透過
性素材は、いずれもエチレン−酢酸ビニル共重合体(以
下、EVAという)からなることが好ましい。また、接
着にもEVAを用いることが好ましい。透明性に優れ、
太陽光に照射されても耐久性に優れるからである。ま
た、各部品を一体に接着させるのはどのような順に行な
ってもよい。上記の全部を一度に接着させてもよいし、
一部を先に接着させ、残りをその後で接着してもよい。
In this method of manufacturing a photovoltaic power generation device, the preferable range of the interval between the photovoltaic element and the photovoltaic element adjacent thereto and the preferable range of the V-shaped opening angle of the light reflecting plate are the same as described above. . It is preferable that both the first light transmitting portion material and the second light transmitting material are made of an ethylene-vinyl acetate copolymer (hereinafter, referred to as EVA). Further, it is preferable to use EVA also for adhesion. Excellent transparency,
This is because it has excellent durability even when irradiated with sunlight. In addition, the components may be bonded together in any order. All of the above may be bonded at once,
Some may be bonded first and the rest may be bonded later.

【0009】[0009]

【発明の実施の形態】本発明は、高価な光発電素子使用
量を少なくするため、光発電素子をまばらに配置して、
光発電素子と素子の間に入射した太陽光を光反射板によ
り光発電素子に導くことで、光を有効に利用しながら低
価格化を図ったものである。そのポイントは、光発電素
子をまばらに配置する際の光発電素子の位置ずれを防止
するために予め凹みを設けた透明樹脂層を用いることで
ある。
BEST MODE FOR CARRYING OUT THE INVENTION According to the present invention, in order to reduce the amount of expensive photovoltaic elements used,
By guiding the sunlight that has entered between the photovoltaic elements to the photovoltaic elements by means of the light reflecting plate, the cost is reduced while using the light effectively. The point is to use a transparent resin layer provided with a recess in advance in order to prevent the displacement of the photovoltaic elements when the photovoltaic elements are sparsely arranged.

【0010】実施例1 図1は、凹みを設けた透明な部材11を使用し、集光型
太陽光発電装置を作製する手順について詳しく説明する
ための製造工程説明図である。図1(A)に示すよう
に、透明カバーガラス1の上に、架橋温度が150℃の
EVA(ハイシート社のSC−28)2で凹み5を予め
形成した部材11を用意し、さらに凹みの上に架橋温度
が150℃のEVA6と光発電素子3を置き、さらにそ
の光発電素子3の上にEVA6とV字形状光反射板4を
セットし、全体をロータリーポンプで真空排気できるラ
ミネーション装置内でEVA内に泡の巻き込みをしない
ようにしながら150℃に加熱し、EVAを溶融して、
各部品を接着して冷却後取り出し、図1(B)に示すよ
うに、光発電素子をEVAの中に入れた状態で固められ
た製品が完成した。このように凹部内に光発電素子を入
れることにより光発電素子がEVAの中で移動したり傾
いたり回転したりするというようなことがなく、素子を
所定の目的の位置にきちんと位置決めできた。
Embodiment 1 FIG. 1 is a manufacturing process explanatory diagram for explaining in detail a procedure for manufacturing a concentrating solar power generation device using a transparent member 11 having a recess. As shown in FIG. 1 (A), a member 11 in which a recess 5 is formed in advance on a transparent cover glass 1 with an EVA (SC-28 manufactured by Highsheet Co.) 2 having a crosslinking temperature of 150 ° C. is prepared. A lamination device that places an EVA 6 with a crosslinking temperature of 150 ° C. and a photovoltaic element 3 on top of it, sets an EVA 6 and a V-shaped light reflecting plate 4 on the photovoltaic element 3, and evacuates the whole with a rotary pump. Heating to 150 ° C. while avoiding entrainment of bubbles in EVA, melting EVA,
Each component was bonded, cooled, taken out, and as shown in FIG. 1 (B), a product was completed in which the photovoltaic device was put in EVA and solidified. By placing the photovoltaic element in the recess as described above, the photovoltaic element did not move, tilt or rotate in the EVA, and the element could be properly positioned at a predetermined target position.

【0011】光発電素子3の幅は24mm、間隔は7.
2mmから24mmの範囲とした。このように光発電素
子の幅1に対し、間隔は0.3から1の範囲とすること
が好ましく、0.5から0.7の範囲とすることがより
好ましい。光発電素子の縦方向(紙面と垂直方向)は連
続した1つの光発電素子であるが、複数の光発電素子を
並べてもよい。V字形状光反射板4の反射面の開き角度
は120度であり、そのピッチは0.2mmとした。こ
の角度は、115度から125度の範囲とすることが好
ましく、118度から122度の範囲とすることがより
好ましい。
The width of the photovoltaic element 3 is 24 mm and the interval is 7.
The range was 2 mm to 24 mm. As described above, the interval is preferably in the range of 0.3 to 1 with respect to the width 1 of the photovoltaic element, and more preferably in the range of 0.5 to 0.7. The photovoltaic element is one continuous photovoltaic element in the vertical direction (perpendicular to the paper), but a plurality of photovoltaic elements may be arranged. The opening angle of the reflecting surface of the V-shaped light reflecting plate 4 was 120 degrees, and the pitch was 0.2 mm. This angle is preferably in the range of 115 degrees to 125 degrees, and more preferably in the range of 118 degrees to 122 degrees.

【0012】太陽光は図1(B)の下方向から入射し、
透明カバーガラス1に入射された光は直接光発電素子3
に到達するものと、V字形状光反射板4に直接入射した
光はV字表面で反射されてその反射角度で規定される方
向に進み、透明カバーガラス1で全反射され最終的には
光発電素子3に到達する。なお、光発電素子からの電気
取り出しケーブルは図示省略した。図1(B)に示すよ
うに光発電素子は断片的に配置され、少ない発電素子数
にもかかわらず、カバーガラスに入射した太陽光は有効
に利用され発電を行なうことができた。光発電素子間隔
が12mmのとき、本実施例の集光型太陽光発電装置の
発電量は、従来のそれに対して約90%程度であった。
The sunlight enters from below in FIG.
The light incident on the transparent cover glass 1 is directly transmitted to the photovoltaic element 3
And the light directly incident on the V-shaped light reflecting plate 4 are reflected on the V-shaped surface and proceed in the direction defined by the reflection angle, and are totally reflected by the transparent cover glass 1 and finally light. The power reaches the power generating element 3. It should be noted that a cable for taking out electricity from the photovoltaic element is not shown. As shown in FIG. 1 (B), the photovoltaic elements were arranged in pieces, and despite the small number of power generating elements, sunlight incident on the cover glass was effectively used to generate power. When the distance between the photovoltaic elements was 12 mm, the power generation amount of the concentrating solar power generation device of the present example was about 90% of that of the conventional one.

【0013】図2は、前述の凹みを設けた透明な部材1
1の作成方法を示した図である。図2(A)に示すよう
に、透明カバーガラス1の上に架橋温度が150℃のE
VA2を置き、真空排気しながら、150℃に加熱して
EVAを溶融し、上から凸型21を押付け、冷却後取り
出すと、図2(B)に示すように凹み5を有する部材1
1が完成した。この凹みは先に説明したように、光発電
素子を落し込む穴である。凸型21は金属アルミ材料を
目的の凸型に機械加工し、その表面に20ミクロン厚さ
のテフロンコートをしておくと、溶融EVAが凸型に付
着せず、凸型とEVAとの離型性を容易にしている。
FIG. 2 shows a transparent member 1 having the above-mentioned recess.
FIG. 4 is a diagram showing a method of creating No. 1; As shown in FIG. 2 (A), E on the transparent cover glass 1 with a crosslinking temperature of 150 ° C.
The VA 2 is placed, heated to 150 ° C. while evacuating to melt the EVA, pressing the convex 21 from above, and taking out after cooling, the member 1 having the recess 5 as shown in FIG.
1 was completed. This depression is a hole into which the photovoltaic element is dropped as described above. The convex mold 21 is formed by machining a metal aluminum material into a target convex form and applying a Teflon coat having a thickness of 20 microns on the surface thereof. Easy to type.

【0014】EVAは架橋温度に達すると溶融、架橋が
内部で始まり、架橋結合してしまう。そうなると再度架
橋温度に達しても、軟化はするがその形状は維持してお
り先に形成した凹みが大きく移動変形することはない。
従って、図1で説明した工程を経ても、光発電素子の相
対的位置関係がずれることはなく、所定の位置及び間隔
を保持したまま光発電素子は接着固定され、集光型太陽
光発電装置を製作することができた。
When EVA reaches the crosslinking temperature, it melts and begins to crosslink internally to form crosslinks. In that case, even if the crosslinking temperature is reached again, it softens but maintains its shape, and the previously formed dent does not significantly move and deform.
Therefore, even after the steps described with reference to FIG. 1, the relative positional relationship of the photovoltaic elements does not shift, and the photovoltaic elements are adhered and fixed while maintaining the predetermined positions and intervals, and the concentrating solar power generation apparatus Could be produced.

【0015】次に本実施例のV字形状光反射板の形成に
ついて説明する。V字形状光反射板の詳細構造は図3に
示す構成となっている。すなわち、反射板のベースとな
るポリカーボネート或いはポリエチレンテレフタレート
(PET)等のプラスチック基板31の上に、紫外線硬
化樹脂等からなるV字形状転写樹脂32の上に、アルミ
や銀等からなる光反射蒸着金属層33を積層し、さらに
この光反射蒸着金属層33の上に適当な厚さのSiO2
等の無機物の反射促進層34を積層した構造でもよい。
基板31は透明でも不透明でもよい。さらにその上にキ
ズなどから反射膜を守る保護膜を形成してもよい。
Next, the formation of the V-shaped light reflecting plate of this embodiment will be described. The detailed structure of the V-shaped light reflecting plate has the configuration shown in FIG. That is, on a plastic substrate 31 such as polycarbonate or polyethylene terephthalate (PET) as a base of a reflection plate, on a V-shaped transfer resin 32 made of an ultraviolet curable resin or the like, and on a light reflection deposited metal made of aluminum, silver or the like. the layers 33 are laminated, further SiO 2 of suitable thickness on the light-reflective vapor deposited metal layer 33
A structure in which a reflection promoting layer 34 made of an inorganic material such as an inorganic material is laminated may be used.
Substrate 31 may be transparent or opaque. Further, a protective film for protecting the reflective film from scratches or the like may be formed thereon.

【0016】図4は、V字形状光反射板の他の例とし
て、反射板のベースとして金属アルミ板41を使用した
例を挙げた。金属アルミ板の上にEVA等からなるV字
形状転写樹脂42を形成した例を示す。その上に光反射
金属、例えばアルミ又は銀蒸着膜を積層した(図示省
略)。
FIG. 4 shows an example in which a metal aluminum plate 41 is used as a base of the reflection plate as another example of the V-shaped light reflection plate. An example is shown in which a V-shaped transfer resin 42 made of EVA or the like is formed on a metal aluminum plate. A light-reflective metal, for example, an aluminum or silver deposited film was laminated thereon (not shown).

【0017】図5は、V字形状光反射板のV字形状作製
方法を示した図である。図5(A)に示すように、基板
41の上にEVAからなるV字形状転写樹脂42を置
き、真空排気しながら、150℃に加熱してEVAを溶
融し、上からV字メス型51を押付け、冷却後取り出す
と図5(B)に示すようなV字形状を有するV字形状光
反射基板ができ、その上に先に述べた光反射金属等を積
層(図示省略)してV字形状光反射板4が完成した。な
お、反射金属、保護膜は、すでに説明したので図示は省
略する。V字メス型は前述の凸型21と同様に、金属ア
ルミ材料を目的の形状に機械加工し、その表面に20ミ
クロン厚さのテフロンコートをしておくと、溶融EVA
がV字メス型に付着せず、V字メス型とEVAとの離型
性に優れる。
FIG. 5 is a view showing a method of forming a V-shaped light reflecting plate in a V-shape. As shown in FIG. 5A, a V-shaped transfer resin 42 made of EVA is placed on a substrate 41 and heated to 150 ° C. while evacuating to melt the EVA. Is pressed and taken out after cooling, a V-shaped light-reflecting substrate having a V-shape as shown in FIG. 5 (B) is formed, and the above-mentioned light-reflecting metal or the like is laminated (not shown) on the V-shaped light-reflecting substrate. The letter-shaped light reflection plate 4 is completed. Note that the reflective metal and the protective film have already been described, and are not shown. As in the case of the above-mentioned convex mold 21, the V-shaped female mold is formed by machining a metal aluminum material into a desired shape and coating the surface with a Teflon coat having a thickness of 20 microns.
Does not adhere to the V-shaped female mold, and is excellent in releasability between the V-shaped female mold and EVA.

【0018】なお、本実施例で開示した温度条件は使用
するEVAの特性によるものであり、別のEVAを使用
した場合はこの限りではない。
Note that the temperature conditions disclosed in the present embodiment depend on the characteristics of the EVA used, and are not limited to the case where another EVA is used.

【0019】[0019]

【発明の効果】本発明によれば、透明基板の上に高価な
光発電素子をまばらに配置することができ、安価な太陽
光発電装置及びその製造方法を提供することができた。
According to the present invention, an expensive photovoltaic element can be sparsely arranged on a transparent substrate, and an inexpensive photovoltaic power generator and a method of manufacturing the same can be provided.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の一実施例の太陽光発電装置の製造工程
説明図。
FIG. 1 is a diagram illustrating a manufacturing process of a photovoltaic power generator according to one embodiment of the present invention.

【図2】本発明の一実施例の太陽光発電装置の製造に用
いる凹み付き部材の製造工程説明図。
FIG. 2 is an explanatory view of a manufacturing process of a member with a dent used for manufacturing a photovoltaic power generator according to one embodiment of the present invention.

【図3】本発明の太陽光発電装置に用いるV字形状光反
射板の一例の断面図。
FIG. 3 is a cross-sectional view of an example of a V-shaped light reflecting plate used in the solar power generation device of the present invention.

【図4】本発明の太陽光発電装置に用いるV字形状光反
射板の他の例の断面図。
FIG. 4 is a cross-sectional view of another example of the V-shaped light reflecting plate used in the solar power generation device of the present invention.

【図5】本発明の太陽光発電装置に用いるV字形状光反
射板の一例の製造工程説明図。
FIG. 5 is a diagram illustrating a manufacturing process of an example of a V-shaped light reflecting plate used in the solar power generation device of the present invention.

【符号の説明】[Explanation of symbols]

1…透明カバーガラス 2、6…エチレン−酢酸ビニル共重合体(EVA) 3…光発電素子 4…V字形状光反射板 5…凹み 11…部材 21…凸型 31…プラスチック基板 32、42…V字形状転写樹脂 33…光反射蒸着金属層 34…反射促進層 41…基板 51…V字メス型 1: Transparent cover glass 2,6 ... ethylene-vinyl acetate copolymer (EVA) 3. Photovoltaic element 4: V-shaped light reflector 5… dent 11 ... members 21 ... convex 31 ... Plastic substrate 32, 42: V-shaped transfer resin 33 ... Light reflection deposited metal layer 34 ... Reflection promoting layer 41 ... Substrate 51 ... V-shaped female type

───────────────────────────────────────────────────── フロントページの続き (72)発明者 筒井 謙 東京都国分寺市東恋ヶ窪一丁目280番地 株式会社日立製作所 中央研究所内 (56)参考文献 特開 平10−284747(JP,A) 特開 昭56−134781(JP,A) 特開 平9−92867(JP,A) 特開 平9−92848(JP,A) 特開2001−127331(JP,A) 特開2000−323740(JP,A) 特開2001−119054(JP,A) 実開 昭62−101247(JP,U) (58)調査した分野(Int.Cl.7,DB名) H01L 31/04 - 31/078 ────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Ken Tsutsui 1-280 Higashi Koigabo, Kokubunji-shi, Tokyo Central Research Laboratory, Hitachi, Ltd. (56) References JP-A-10-284747 (JP, A) JP-A Sho56 JP-A-139471 (JP, A) JP-A-9-92867 (JP, A) JP-A-9-92848 (JP, A) JP-A-2001-127331 (JP, A) JP-A-2000-323740 (JP, A) Open 2001-119054 (JP, A) Actual open 62-101247 (JP, U) (58) Fields investigated (Int. Cl. 7 , DB name) H01L 31/04-31/078

Claims (2)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】透明基板の上に、表面に凹部を有する第1
の光透過性素材が配置された部材を準備し、該第1の光
透過性素材の上記凹部内に光発電素子を配置し、該光発
電素子上に、第2の光透過性素材を介して断面がV字形
状をした光反射板を配置し、これらを一体に接着させた
ことを特徴とする集光型太陽光発電装置の製造方法
1. A first substrate having a concave portion on a surface on a transparent substrate.
Preparing a member on which the light transmitting material of
A photovoltaic element is arranged in the recess of the transparent material,
V-shaped cross section on the element via the second light-transmitting material
-Shaped light reflectors are placed and these are bonded together
A method for manufacturing a concentrating solar power generation device, comprising:
【請求項2】上記光発電素子は、それに隣接する上記光
発電素子との間隔を、上記光発電素子の幅1に対して
0.3から1の範囲として配置されることを特徴とする
請求項1に記載の集光型太陽光発電装置の製造方法
2. The photovoltaic element according to claim 1, wherein
The distance between the photovoltaic element and the width 1 of the photovoltaic element is
Characterized by being arranged as a range from 0.3 to 1
A method for manufacturing the concentrating solar power generation device according to claim 1 .
JP2000018044A 2000-01-25 2000-01-25 Method of manufacturing concentrating solar power generation device Expired - Fee Related JP3409007B2 (en)

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JP4989115B2 (en) * 2006-06-07 2012-08-01 株式会社ブリヂストン Solar cell module
GB2449504A (en) * 2007-05-25 2008-11-26 Renewable Energy Corp Asa Photovoltaic module with reflective V-grooves
JP4706759B2 (en) * 2009-01-23 2011-06-22 トヨタ自動車株式会社 Solar cell
JP5342281B2 (en) * 2009-03-16 2013-11-13 古河電気工業株式会社 Manufacturing method of solar cell unit
JP4877353B2 (en) * 2009-04-02 2012-02-15 トヨタ自動車株式会社 Manufacturing method of solar cell module
JP2010267942A (en) * 2009-04-14 2010-11-25 Toppan Printing Co Ltd Reflection protective sheet and semiconductor power generator using the same
US8916019B2 (en) 2009-09-28 2014-12-23 Toyota Jidosha Kabushiki Kaisha Method for manufacturing solar cell module and precursor structure for solar cell module
JP2011109003A (en) * 2009-11-20 2011-06-02 Sharp Corp Method of removing solar cell and transparent resin from transparent substrate, and solar cell module

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JPS62101247U (en) * 1985-08-27 1987-06-27
JPH0992848A (en) * 1995-09-20 1997-04-04 Canon Inc Solar battery module
JPH0992867A (en) * 1995-09-27 1997-04-04 Asahi Glass Co Ltd Solar cell module manufacturing method
JPH10284747A (en) * 1997-04-11 1998-10-23 Sharp Corp Solar battery module
JP2000323740A (en) * 1999-05-11 2000-11-24 Hitachi Ltd Condensing photovoltaic power-generation device
JP2001119054A (en) * 1999-10-15 2001-04-27 Hitachi Ltd Light-condensing type photovoltaic power generating device
JP2001127331A (en) * 1999-10-29 2001-05-11 Sanyo Electric Co Ltd Solar battery module

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