JP3402477B2 - Ineffective deposition removal equipment for deposition equipment - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vacuum vapor deposition apparatus such as a so-called vapor deposition apparatus, an ion plating apparatus and a sputtering apparatus. More specifically, the vapor deposition material is vaporized in a continuous vacuum processing facility to form a material to be processed. The present invention relates to a vapor deposition device.

[0002]

2. Description of the Related Art Vacuum deposition is a film forming process in which a metal is heated and evaporated in a vacuum, and the evaporated metal is solidified on the surface of a substrate (material to be processed) to form a film. In order to heat the vapor-deposited metal in such a film-forming process, a continuous vacuum vapor-deposition apparatus for vapor-depositing a metal on a thin plate-like continuous traveling substrate using an electron beam has been known. This continuous vacuum deposition equipment is capable of depositing nitrides, carbides, oxides, etc., which cannot be handled by normal wet plating, can easily form alloy films of two or more metals, and has a high deposition rate. It has the advantages of

In such a conventional continuous vacuum vapor deposition apparatus, for example, as shown in FIG. 22, a thin strip-shaped traveling substrate 12 that continuously travels, an electron gun 3 that emits an electron beam 4, and a molten coating metal are used. It is equipped with crucibles 5 and 6 to be housed, and a vacuum chamber 1 having a traveling substrate and a crucible built therein and evacuated to 10 ⁻³ to 10 ⁻⁵ Torr. An electron beam is emitted by an electron gun 3, and an electron beam is emitted by a magnetic field (not shown). The direction of the beam is bent to heat and evaporate the metals 7 and 8 in the crucibles 5 and 6, and the evaporated metal is solidified on the surface of the traveling substrate 12 to form a film. The traveling substrate travels horizontally via the guide rollers 13. With such a continuous vacuum vapor deposition device, for example, an alloy film of two kinds of metals can be formed on the traveling substrate.

[0004]

In such a vapor deposition apparatus, when the evaporation material of the crucibles 5 and 6 is irradiated with the electron beam 4 from the electron gun 3 in the vacuum chamber to deposit the alloy film on the traveling substrate 12, the traveling substrate is There was a problem that the ineffective evaporation material 51 that was not vapor-deposited on 12 was vapor-deposited and deposited on the deposition preventing plate 50.

That is, the conventional vapor deposition apparatus shown in FIG. 22 has the following problems. If there is no device for removing the ineffective vapor deposition material 51, the vapor deposition material is deposited more and more, so that a predetermined vapor deposition zone on the traveling substrate is narrowed or the ineffective vapor deposition material deposited on the deposition prevention plate 50 contacts the traveling substrate 12. Then, the traveling board 12 is damaged. As a result, the apparatus cannot be operated for a long time, and it is necessary to frequently clean the deposition chamber, resulting in extremely poor productivity. Further, since the ineffective vapor deposition material 51 is as thick as several cm, the weight is heavy, and the work becomes difficult when it is peeled off from the deposition preventing plate 50.
That is, it was necessary to peel off the film like peeling off the ingot.

Once a protrusion is formed on the adhesion-preventing plate for some reason, the protrusion selectively grows and the irregularities become severe. That is, since the convex portions and the valleys between the convex portions are less likely to be vapor-deposited, the convex portions grow further and the irregularities become more severe. Since the weight of the ineffective vapor deposition material becomes heavy when it is thicker than several cm, it is necessary to make the adhesion-preventing plate 50 have a strong structure, withstand the load, and withstand the impact / vibration during the peeling work described above.

A part of the ineffective vapor deposition material may be peeled off during the operation, and its heavy weight may damage the equipment installed on the lower side.

In order to solve the above-mentioned various problems,
A deposit adhesion preventing device has been proposed, which is provided with an endless belt which is in contact with the back side of the traveling substrate and has a width wider than that of the traveling substrate. . However, such a device has the following problems. The ineffective vapor deposits outside the both ends of the width of the traveling substrate can be collected, but the ineffective vapor deposits in the longitudinal direction of the traveling substrate cannot be recovered at all. This is extremely inconvenient when the alloy film is formed as in the present invention because the amount of ineffective deposits in the portion that cannot be used as an alloy is large.

Since the deposited material has a considerably strong adhesion, it cannot be easily removed even by using a scraper. The blade of the scraper is heavily consumed and the scraper is in a vacuum, so it is necessary to break the vacuum (return to normal pressure) to replace the blade, and it is necessary to stop the operation of the main body.

In order to take out the vapor deposition scraped by the scraper and collected in the collection box to the outside, it is necessary to break the vacuum once and stop the operation of the main body.

Further, in the conventional vapor deposition apparatus shown in FIG. 22, it is conceivable to use a portion corresponding to the deposition preventive plate 50 as a heater plate, but when the same heater plate is installed on the whole, the following problems occur. There is. When only one kind of evaporation material is used, it can be melted and dropped at the same temperature in any zone (region) as long as the melting point of the material is equal to or higher than that of the material. There is a problem that the melting point differs because the alloy ratio varies depending on each zone of the plate.

For example, FIG. 23 shows a phase diagram of an alloy of aluminum and nickel. Pure animinium (Ni 0% in the figure) has a melting point of about 660 ° C., but 50% has a melting point of 1638 ° C. Therefore, in order to melt in all zones, it is necessary to be higher than the highest melting point of the deposited film (1638 ° C. or higher in the above example). However, as a result, the entire deposition chamber is exposed to extremely high temperatures, making it difficult to take heat-resistant measures for equipment and increasing equipment costs.
The electric power required for the heater plate is increased, and the running cost is considerably increased.

For example, when the temperature is 1000 ° C. or lower, a commercially available, inexpensive, and easily processed material such as SUS310S can be used. In addition, a normal thermocouple can be used for controlling the temperature of the heater plate. However, at a high temperature of 1500 ° C. or higher, materials such as molybdenum, tungsten, and carbon-based materials are not so marketable, and expensive and poorly workable materials have to be used. Also, if the temperature sensor for the heater plate also reaches a high temperature of 1500 ° C. or more, the thermocouple generally has a short life and cannot be practically used as production equipment. Therefore, a non-contact type such as a two-color thermometer must be used. I don't get it. As a result, the configuration of the equipment becomes difficult and the overall cost becomes high. Therefore,
It is necessary to limit the high temperature part to the minimum necessary range.

Furthermore, the higher the temperature inside the chamber,
The amount of gas generated from each component increases, and this gas is taken into the film when a film is formed on the traveling substrate (non-deposited material) 12, which deteriorates the film quality. Further, the higher the temperature inside the chamber, the greater the influence of radiant heat on the traveling substrate, and it may be overheated to a temperature equal to or higher than a predetermined temperature, and it may be necessary to cool the traveling substrate.

From the above, it is necessary to keep the high temperature portion in the chamber within the minimum necessary range.

The present invention was created to solve the above-mentioned various problems. That is, the object of the present invention is to provide a heater plate capable of setting the temperature for each zone to a temperature equal to or higher than the melting point corresponding to the ratio of the alloy in each zone, and each heater plate is maintained at the temperature at which the deposit melts / drops. This is a mutual arrangement of the heater plates that does not solidify the ineffective vapor deposits melted and dropped from the upper heater plate in the middle, and the ineffective vapor deposits melted and dropped from the heater plate can be collected in the collection pot. Another object of the present invention is to provide an invalid deposit removing device for a vapor deposition apparatus, which can discharge the invalid deposit to the outside without breaking the vacuum of the main body and can accurately control the temperature of the heater plate.

[0017]

According to the present invention, there is provided an ineffective deposit removing device for a vapor deposition device for forming an alloy film on a surface of a target object by vapor deposition using a plurality of evaporation materials in a vacuum, depending on the alloy ratio of the evaporation material to be deposited besides the evaporation object
A plurality of heater plates respectively provided in a plurality of vertically divided zones, and a temperature for maintaining the set temperature of each heater plate above the temperature of the liquidus line corresponding to the alloy ratio deposited in each zone. A controller is provided, and the ineffective deposit removal device of the vapor deposition device is provided which melts and drops the ineffective deposit deposited on the surface of the heater plate.

According to a preferred embodiment of the present invention, when the melting and dropping temperature of the alloy is lower in the lower heater plate than in the upper heater plate, the heater plate is parallel to the vapor deposition surface of the heater plate. The formed angle θ is in the range of θ ≦ 90 °, and it is arranged so that the ineffective vapor deposition material that melts and drops from each heater plate does not drop on the lower heater plate. Also, melting of alloy
When the lower heater plate has a higher dripping temperature than the upper heater plate, the heater plate has an angle θ between the deposition surface of the heater plate and the horizontal in the range of 180 °>θ> 90 °, and The ineffective vapor deposition material that melts and drops from each heater plate is arranged so as to drop on the lower heater plate.

[0019]

According to the above configuration of the present invention, a plurality of heater plates respectively provided in a plurality of zones corresponding to the composition of the evaporation material other than the object to be vapor-deposited, and the set temperature of each heater plate are set in each zone. Since each heater plate is equipped with a temperature control device for maintaining the liquidus temperature above the temperature corresponding to the alloy ratio to be vapor-deposited, each heater plate should be maintained above the liquidus temperature corresponding to the alloy ratio to be vapor-deposited in each zone. As a result, the temperature can be set for each zone above the melting point corresponding to the alloy ratio in each zone, and each heater plate can be maintained at the temperature at which the deposits melt and drip.

Further, for example, when the melting / dripping temperature of the alloy is lower in the lower heater plate than in the upper heater plate, the angle θ formed by the heater plate and the horizontal surface of the heater plate is θ ≦. It is arranged so that the ineffective vapor deposition material in the range of 90 ° and melting / dripping from each heater plate does not drip on the lower heater plate, while the melting / dripping temperature of the alloy is on the lower heater plate. When the temperature is higher than that of the heater plate, the angle θ between the heater plate and the horizontal surface is 180 °.
>Θ> 90 °, and melting from each heater plate
Since the ineffective deposition material to be dropped is arranged so as to be dropped onto the lower heater plate, it is possible to arrange the heater plates so that the ineffective deposition material melted and dropped from the upper heater plate is not solidified on the way.

Further, with this structure, the ineffective vapor deposition material melted / dropped from the heater plate is collected in the collection pot, and the ineffective vapor deposition material is discharged to the outside without breaking the vacuum of the main body, and the heater plate temperature is accurately measured. It becomes possible to control.

[0022]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT A preferred embodiment of the present invention will be described below with reference to the drawings. In each drawing, the same reference numerals are used for common parts. FIG. 1 is an overall configuration diagram of a vapor deposition apparatus provided with an ineffective deposit removing apparatus according to the present invention. In this figure, the continuous vacuum vapor deposition apparatus includes a thin strip-shaped traveling substrate 12 that continuously travels, an electron gun 3 that emits an electron beam 4, crucibles 5 and 6 that contain molten coating metal,
Built-in running board and crucible 10 ^-3 to 10 ^-5 Torr
A vacuum chamber 1 that has been evacuated (exhaust device is not shown), emits an electron beam 4 by an electron gun 3, bends the direction of the electron beam 4 by a magnetic field (not shown), and forms metal 7 in the crucibles 5 and 6. , 8 are heated to evaporate and the evaporated metal is solidified on the surface of the traveling substrate 12 to form a film. The traveling substrate travels horizontally via the guide rollers 13. With this vapor deposition device, for example, an alloy film of two kinds of metal can be formed on the traveling substrate. Such a configuration is similar to that of the conventional continuous vacuum vapor deposition device.

The apparatus targeted by the present invention is a vapor deposition apparatus for forming an alloy film on the surface of an object to be vapor-deposited by vapor deposition using a plurality of evaporation materials in vacuum, but a reaction gas such as ion plating is added. Including things. In addition, the alloy here is not limited to the literal metal, but includes a wide range of substances to be synthesized. The ineffective deposit removing device of the vapor deposition device according to the present invention sets a plurality of heater plates 40 respectively provided in a plurality of zones according to the composition of the evaporation material other than the object to be vapor-deposited, and the set temperature of each heater plate 40. Temperature control device 5 for maintaining the liquidus temperature above the temperature corresponding to the alloy ratio deposited in the zone
2 is provided for melting and dropping the ineffective vapor deposition material vapor-deposited on the surface of the heater plate 40.

Further, a collecting pot 14 is provided on the lower side of the lowermost heater plate so that the ineffective vapor deposition material 30 that melts and drops directly drops. Further, another collecting pot 15 is provided so that the ineffective vapor deposition material 31 that is melted and dropped on the lower side of the other lowermost heater plate is dropped through the lowermost heater plate. Also,
Equipped with pressure equalization pots 34 and 35 for discharging the ineffective vapor deposition materials 32 and 33 collected in the collection pots 14 and 15 to the outside, and in the case of discharging from the collection pots 14 and 15 to the pressure equalization pots 34 and 35, they are equalized. When the pressure pot is held at the same pressure as the vacuum chamber and dropped by gravity and discharged from the pressure equalization pot to the outside, the vacuum chamber and pressure equalization pot are shut off, and the pressure equalization pot is made the same pressure as the atmospheric pressure. It is designed to be discharged to the outside.

The collection pot 14 is arranged with an opening in a range where the dropped substance 30 on the heater plate 40 on the left side in FIG. 1 can be collected. The ineffective vapor deposition material collected in the collection pot 14 is discharged to the outside of the vacuum chamber by using the collection material discharging device 16.
In this method, first, the pressure equalizing pot 34 is evacuated to the same pressure (vacuum) as the vacuum chamber 28. At this time, valve 1
8, 20, 22, and 36 are closed, and the valve 26 is opened. Next, the vacuum exhaust valve 26 is closed, the exhaust pressure valve 36 is opened, and then the first exhaust valve 18 is opened. Then, the ineffective vapor deposit 32 falls into the pressure equalizing pot 34 due to gravity. The exhaust pressure valve 36 is provided to allow the residual gas in the pressure equalizing pot 34 to escape into the vacuum chamber 1 in order to prevent the residual gas from being compressed, and helps the ineffective deposit 32 to smoothly drop into the pressure equalizing pot 34. Play a role. After a predetermined amount of ineffective vapor deposition material 32 has dropped into the pressure equalizing pot 34, the valves 18, 36 are
Close. Then, the charging valve 22 is opened and the inert gas 24 such as argon (Ar) is charged to the atmospheric pressure. Two
Although 4 can be air, an inert gas is preferable in order to prevent reaction with the ineffective deposit 32. After the pressure in the pressure equalizing pot 34 becomes atmospheric pressure, the valve 20 is opened and the inert gas 2
While letting 4 flow little by little, the ineffective vapor deposit 32 is discharged to the outside. After discharging, the valves 24 and 20 are closed and the valve 26
Open and evacuate to prepare for the next discharge. The same is repeated thereafter.

Although not shown, 14, 18, 2
2, 26, 34, 36, 20 and the tubing connecting them are heated above the solidification temperature to prevent the solidification of 32 in the middle. Further, although FIG. 1 shows heating by an electron beam of an electron gun, in vapor deposition and ion plating, an electron gun, an HCD gun (hollow cathode discharge gun), heating by a resistance heating method, and sputtering are ion sputtering. Alternatively, a method of popping out of the target may be used.

In the apparatus shown in FIG. 1, vapor deposition is carried out as follows. First, the vacuum chamber 1 is evacuated 2 to a normal pressure of 10 ⁻³ to 10 ⁻⁵ torr by a vacuum exhaust device (not shown). Evaporation material 7 (A), 8 for crucibles 5, 6
Add (B) respectively. Although two crucibles are shown in this figure, the number of crucibles may be two or more. An electron beam 4 is generated from an electron gun 3, irradiates the crucibles 5 and 6, and evaporating material 7
Evaporate 8 to form vapor streams 9, 10. A region 11 near the center where the evaporation flows of A and B are mixed is a zone forming the alloy ratio of A and B to be used.

In FIG. 1, the evaporative streams 9 and 10 are shown by being clearly separated by straight lines, but this is for convenience. In fact, zones of various alloy ratios are continuously formed so as to surround the crucible as the center. It has spread. Further, the alloy zone 11 having a predetermined ratio range of the materials A and B forms an alloy film on the traveling substrate 12. Note that, as described above, an alloy is not limited to a metal, but includes a wide range of substances to be synthesized.

The traveling substrate 12 travels via the guide rollers 13. The deposited films other than those deposited on the traveling substrate 12 are ineffective deposits, and are melted and dropped by the heater plate 40 heated to the melting / dropping temperature corresponding to the alloy ratio of each zone and collected in the collection pots 14 and 15. Then, the collected substances are discharged to the outside of the vacuum chamber.

FIG. 2 schematically shows a phase diagram of a binary alloy of two kinds of metals A and B. In this figure, the horizontal axis represents the composition ratio of metals A and B (the left end is metal A, the right end is metal B), and the vertical axis represents temperature. Further, in the figure, L is a liquidus line, an upper side of the liquidus line L indicates a liquid phase, and a lower side of L indicates a solid phase. For convenience, the coexistence region of the solid phase and the liquid phase is included in the solid phase. The liquid phase temperature differs depending on the alloy ratio of A and B. When the vapor deposition zone V used for vapor deposition is divided into zones (areas) indicated by numbers 1 to 13 in the figure, a is an ineffective vapor deposition zone and b is a vapor deposition zone to be used (hereinafter referred to as an effective vapor deposition zone). Is called).

FIG. 3 schematically shows a vapor deposition apparatus to which the present invention is applied corresponding to FIG. As shown in the figure, A, B
In the case of binary alloy vapor deposition, each zone in the chamber (Fig. 2
1 to 13) corresponding to the above, the ratio of A and B of the film to be formed is different, and correspondingly, the temperature of becoming a liquid phase (melting temperature) is different. Therefore, in FIG. 2 and FIG. 3, in order to prevent the deposition of the ineffective vapor deposition material by melting and dropping the ineffective vapor deposition material in the ineffective vapor deposition zone other than the zone (effective vapor deposition zone) of b, it is ideal to use the liquidus line. The heater plate temperature may be continuously set according to the temperature. In particular, in order not to be in the solid-liquid coexistence, but all become a liquid phase, the flow is smooth, and the degree of evaporation is reduced, for example, the liquidus temperature + 50 ° C to + 100 ° C is preferable. Therefore, as shown in FIG. 3, it is preferable to install a heater plate in each zone and set the temperature of the heater plate to be equal to or higher than the highest liquidus temperature in that zone. Of course, the better the zones are subdivided. Also, the higher the temperature is above the liquidus temperature, the higher the rate of evaporation. In this way, by appropriately setting the heater plate temperature, the ineffective vapor deposition material in that zone is melted and dropped (partially evaporated), and the deposition of the ineffective vapor deposition material can be eliminated. The present invention realizes such means.

FIGS. 4-7 show preferred arrangements of heater plates in various cases. (1) FIG. 4 shows a case where the melting / dripping temperature of the alloy is low (shown by L) on the lower side and high (shown by H) on the upper side.
The temperature of each heater plate is T1 <T2 <T3 <T4 <T5 <T6
Becomes When the temperature of the heater plate in the lower zone is low, when the ineffective deposition material dropped from the upper heater plate drops in the shape of the lower heater plate, part (or all) of it solidifies due to the low temperature. Deposition starts. Therefore, in this case, it is necessary to arrange the dropping liquid on the upper heater plate so as not to drop on the lower heater plate as shown in the figure. Therefore, in this case, the heater plate angle θ ≦ 90 °. Further, in this case, the lower end of each heater plate is arranged so as to be closer to the evaporation flow side than the heater plate immediately below.

The uppermost heater plate may be arranged in the same manner as the other heater plates as shown in FIG. 4 (B), but the inclination should be reversed as shown in FIG. 4 (A). Is better. As a result, the area occupied by the heater plate can be reduced. Therefore, the top heater plate is 180 °>
It is preferable that θ> 90 °.

(2) FIG. 5 shows the case where the melting / dripping temperature distribution of the alloy continuously changes to high temperature (H) on the lower side and low temperature (L) on the upper side, and the temperature of each heater plate is T1> T
2>T3>T4>T5> T6. In this case, even if the dropped substance on the upper heater plate is dropped on the lower heater plate, it does not solidify. Therefore, the arrangement is as shown in the figure. Therefore, 180
°>θ> 90 °.

Even in this case, θ ≦ 90 as shown in FIG.
Although it is possible to dispose it at an angle of °, it is preferable to dispose at 180 °>θ> 90 ° in order to effectively use the space of the vacuum chamber 1. This is because the evaporation flows 9 and 10 from the crucible spread in a conical shape toward the upper side, so that the heater plate arrangement of θ> 90 ° or more can effectively use the space of the vacuum chamber.

Further, in this case, there is an advantage that the opening of the collecting pot may be small. It is preferable that the lower end of the heater plate is located closer to the evaporation flow side than the lower heater plate. The discharge of the collected dropped substance 32 is the same as described above.

(3) In FIG. 6, the melting / dripping temperature distribution of the alloy is high (H) on both the lower side and the upper side, and the low temperature part (L) is in the middle.
If there is, that is, the set temperature of multiple heater plates is the lowest
From the side heater plate to the side heater plate,
Change from high temperature to low temperature, and the heat of the lowest temperature
There is a heater plate, and the heater above this lowest temperature heater plate
As it goes to the plate, it changes from relatively low temperature to high temperature
This is the case. The temperature of each heater plate is T1>T2> T3 <
T4 <T5 <T6. In this case, the heater plate is
From the heater plate on the bottom side of the heater plate of the lowest temperature on the way
The angle θ is 180 °>θ> 9 up to the next lower heater plate.
Within the range of 0 °, from the lowest temperature heater plate on the way
The angle of the uppermost heater plate is within the range of θ ≦ 90 °.
It In this figure, T2 ≥T4, T1 ≥T5, T6> T1
Shows the case. Is the heater plate the lowest temperature heater plate?
From the uppermost heater plate
Corresponding to the set temperature of each heater plate of
Bottom heater plate or the minimum temperature
Above or directly below the heater plate one degree below
It is arranged so that it can be dropped. Since T6 is higher in temperature than T1, T6 drops from the heater plate are dropped directly into the collection pot. (4) In FIG. 7, the set temperatures of the plurality of heater plates are set to the lowest side.
As you go from the heater plate to the upper heater plate,
There is a maximum temperature in the middle of the change from low temperature to high temperature.
From the highest temperature heater plate to the upper heater plate.
The temperature of each heater plate is T1 <T2 <T3, T4> T5.
> T6. The heater plate is separated from the heater plate on the bottom side.
The angle θ is θ ≦ 90 ° up to the highest temperature heater plate
, Above the heater plate with the highest temperature in the middle
The angle θ of the heater plate is 180 °>θ> 90 °
It is arranged as in.

Note that, as shown in FIG. 7B, it is preferable that the lower end of each heater plate is located closer to the evaporation flow side than the heater plate immediately below. This arrangement is the same in the cases of FIGS. 4 to 6 described above. Although not shown, there is an ineffective vapor deposition zone on the end side of the traveling substrate, but similarly, the temperature of each heater plate is set according to the alloy ratio of each zone, and the patterns of FIGS. The heater plates are arranged in combination.

In the actual state diagram of the two kinds of metals, there are state diagrams showing various patterns in addition to the state diagrams illustrated in FIGS. 23 and 2. 8 to 17 show combinations of heater plate arrangement patterns corresponding to various alloy phase diagrams. In addition,
For the sake of clarity, only the relationship between the heater plate, the crucible, and the traveling board is shown. In each figure, the diagram on the left side is a state diagram of the alloy, V indicates the vapor deposition zone, and b indicates the vapor deposition zone on the substrate, that is, the vapor deposition zone used. Further, the drawings on the right side show the heater plate H, the crucibles A and B, and the traveling board 1.
The positional relationship of 2 is shown. Although each symbol is shown only in FIG. 8, FIGS. 9 to 17 are the same as those in FIG.

As is clear from FIGS. 8 to 17, it is necessary to change the position and angle of each heater plate in accordance with the state diagram of the alloy.

FIG. 18 is a diagram showing a movable form of each heater plate. As shown in this figure, each heater plate has a structure capable of changing the angle and moving horizontally. As a result, FIG.
The heater plate arrangement pattern as shown in FIG. 17 can be easily made. FIG. 19 is a diagram showing the surface shape of each heater plate. Although the above description has been described as a planar shape for convenience, it may be a convex shape or a concave shape as shown in FIG. However, in the case of FIG. 19A, it is preferable that the convex surface of the lower heater plate does not extend to the evaporation flow side from the vertical line of the lower end of the upper heater plate. Further, it is preferable that the lower end portion (dripping side) of the upper heater plate be on the evaporation flow side with respect to the upper end portion of the lower heater plate.

20 and 21 show details of the heater plate 40 and the temperature control device 52. In these drawings, each heater plate 40 has a heating element 42 and a vapor deposition surface, and the back side thereof.
A hot panel that is heated to a predetermined temperature by the heating element provided in . In addition, the temperature control device 52
Measures the temperature of the hot panel from the back side of the hot panel 41 and controls the heater plate temperature. A hot panel 41 is provided on the evaporation flow side. The material of the hot panel 41 has heat resistance and does not react with the deposited material (chemically stable). For example, tungsten,
Molybdenum and carbon are preferred. Further, a heating element 42 is provided on the back side of the hot panel 41,
Is heated to a predetermined temperature. The back side of the hot panel 41 and the heating element are covered with a heat insulating material 43 to prevent heat loss. The temperature of the hot panel 41 is measured from the back side.

The temperature detector may be either a contact type such as a thermocouple or a non-contact type such as a two-color thermometer. However, it is generally preferable to use a thermocouple as shown in FIG. 20 at 1200 to 1500 ° C. or lower and a two-color thermometer as shown in FIG. 21 for 1200 to 1500 ° C. or higher. The hot panel temperature measured by the temperature detectors 46 and 47 is calculated by the comparator 48 of the temperature control device 52 by the hot panel temperature setter 49.
The heater plate power supply 39 is controlled so that the hot panel reaches a predetermined temperature by comparing with the set value of.

According to the above-described structure of the present invention, the vertical direction is changed according to the alloy ratio of the evaporation material to be vapor-deposited other than the object to be vapor-deposited.
A plurality of heater plates respectively provided in a plurality of zones divided into, and a temperature control device for maintaining the set temperature of each heater plate above the temperature of the liquidus line corresponding to the alloy ratio deposited in each zone. Therefore, each heater plate can be maintained at a temperature of the liquidus line corresponding to the alloy ratio deposited in each zone or higher, whereby each zone has a melting point or higher corresponding to the alloy ratio of each zone. You can set the temperature to
Each heater plate can be maintained at a temperature at which the deposits melt and drip.

Further, for example, when the melting and dropping temperature of the alloy is lower in the lower heater plate than in the upper heater plate, the angle θ between the heater plate and the horizontal surface of the heater plate is θ ≦. It is arranged so that the ineffective vapor deposition material in the range of 90 ° and melting / dripping from each heater plate does not drip on the lower heater plate, while the melting / dripping temperature of the alloy is on the lower heater plate. When the temperature is higher than that of the heater plate, the angle θ between the heater plate and the horizontal surface is 180 °.
>Θ> 90 °, and melting from each heater plate
Since the ineffective deposition material to be dropped is arranged so as to be dropped onto the lower heater plate, it is possible to arrange the heater plates so that the ineffective deposition material melted and dropped from the upper heater plate is not solidified on the way.

Further, with this structure, the ineffective vapor deposition material melted and dripping from the heater plate is collected in the collection pot, and the ineffective vapor deposition material is discharged to the outside without breaking the vacuum of the main body, and the heater plate temperature is accurately measured. It becomes possible to control.

[0047]

Therefore, according to the present invention, the following effects can be obtained. Since the ineffective deposit is not deposited, the deposition does not narrow the predetermined deposition zone on the traveling substrate. Further, the deposited ineffective deposit does not contact the traveling substrate and damage the traveling substrate. As a result, continuous operation for a long period of time becomes possible.

When vapor-depositing on a continuous running substrate,
It is extremely important from the viewpoint of productivity and cost that the running speed of the running substrate can be increased (that is, the deposition speed ... For example, the traveling speed of the traveling board is 20 to 100 m.
/ Min and a film thickness of 1 to 5 μm (micron meter), the required vapor deposition rate is about 10,000 Å / sec (angstrom / sec). Therefore, the invalid deposition film thickness of the thickest part is 86 mm / day, and in the case of the conventional method of depositing on the deposition preventive plate (FIG. 22), it is impossible to operate in one day, so such high speed However, the present invention makes it possible to operate at a higher speed and for a long time, dramatically increasing productivity and dramatically reducing cost. .

Free from heavy labor to remove ineffective deposits. The discharge device can discharge the deposits to the outside in a batch continuous manner without breaking the vacuum of the deposition part, which greatly saves work, and because this does not interrupt the operation of the device, it can be continuously operated for a long time. Is possible. Since the ineffective vapor deposition material does not peel off and fall during operation, there is no damage to the equipment due to the fall.

It is not necessary to set the entire heater plate to the melting / dropping temperature of the highest temperature of the alloy range to be formed, and it is sufficient to set the heater plate temperature corresponding to the individual alloy ratio, so that the high temperature part can be set to the minimum required. Can be in range. As a result, the facility cost can be further reduced and the running cost can be reduced in terms of heat resistance. (That is, the range in which inexpensive materials, inexpensive sensors, and equipment can be used expands.) In addition, overheating of the traveling substrate due to radiation due to high temperature is reduced.

Since the heater plate temperature is measured from the back side of the hot panel, a. Since the sensor part of the contact type temperature detector does not directly contact the vapor deposition part, there is no wear and the service life is extended. In addition, since there is thermal fluctuation such as condensation heat or latent heat of fusion during vapor deposition on the vapor deposition surface of the hot panel, the temperature measurement value tends to fluctuate. It can have the characteristics of (first-order lag converter) and the temperature measurement value becomes stable. B. In the case of the non-contact type, accurate temperature measurement cannot be performed if the material of the temperature measuring surface changes, but since the hot panel is provided and the measurement is performed from the back side, there is no influence of vapor deposition and accurate temperature measurement is possible.

Further, although it is difficult to accurately measure the temperature of a material that easily emits light such as aluminum (Al), the present invention can measure it without any problem even if the deposit is, for example, an Al alloy because it is the back side of the hot panel. Further, even if the heating element easily reacts with the deposited material and adversely affects it, there is no problem because it is shielded from the deposited material by this configuration. For example, when the heating element is a carbon type, it reacts extremely easily with Al or Si (silicon) and cannot be used as a heating element.

Therefore, in summary, according to the present invention, it is possible to provide a heater plate capable of setting the temperature for each zone to a temperature equal to or higher than the melting point corresponding to the ratio of the alloy in each zone. It is a mutual arrangement of heater plates that can be maintained at the dropping temperature and that does not solidify the ineffective vapor deposits that are melted and dropped from the upper heater plate. Provided is a device for removing ineffective deposits of a vapor deposition device, which can collect the ineffective deposits, discharge the ineffective deposits to the outside without breaking the vacuum of the main body, and accurately control the temperature of the heater plate. be able to.

[Brief description of drawings]

FIG. 1 is an overall configuration diagram of a vapor deposition apparatus equipped with an ineffective deposit removal device according to the present invention.

FIG. 2 is a phase diagram of a binary alloy.

FIG. 3 is a configuration diagram of a vapor deposition device showing a correspondence relationship between A and B alloy ratios depending on locations in a chamber.

FIG. 4 is a diagram showing a preferred arrangement of heater plates in the case of a certain temperature pattern.

FIG. 5 is a diagram showing a preferable arrangement of heater plates in the case of another temperature pattern.

FIG. 6 is a view showing a preferable arrangement of heater plates in the case of another temperature pattern.

FIG. 7 is a diagram showing a preferable arrangement of heater plates in the case of another temperature pattern.

FIG. 8 is a diagram showing a combination of heater plate arrangement patterns corresponding to an alloy phase diagram.

FIG. 9 is a diagram showing a combination of heater plate arrangement patterns corresponding to another alloy state diagram.

FIG. 10 is a diagram showing a combination of heater plate arrangement patterns corresponding to another alloy state diagram.

FIG. 11 is a view showing a combination of heater plate arrangement patterns corresponding to another alloy phase diagram.

FIG. 12 is a view showing a combination of heater plate arrangement patterns corresponding to another alloy state diagram.

FIG. 13 is a diagram showing a combination of heater plate arrangement patterns corresponding to another alloy phase diagram.

FIG. 14 is a view showing a combination of heater plate arrangement patterns corresponding to another alloy state diagram.

FIG. 15 is a diagram showing a combination of heater plate arrangement patterns corresponding to another alloy state diagram.

FIG. 16 is a view showing a combination of heater plate arrangement patterns corresponding to another alloy state diagram.

FIG. 17 is a view showing a combination of heater plate arrangement patterns corresponding to another alloy state diagram.

FIG. 18 is a diagram showing a movable form of each heater plate.

FIG. 19 is a view showing the surface shape of each heater plate.

FIG. 20 is a detailed view of a heater plate and a temperature control device.

FIG. 21 is another detailed view of the heater plate and the temperature control device.

FIG. 22 is an overall configuration diagram of a conventional vapor deposition device.

FIG. 23 is a phase diagram of an alloy of aluminum and nickel.

[Explanation of symbols]

1 Vacuum Chamber 2 Vacuum Exhaust 3 Electron Gun 4 Electron Beam 5, 6 Crucible 7, 8 Evaporation Material 9 Evaporation Flow of Evaporation Material A 10 Evaporation Flow of Evaporation Material B 11 Evaporation Flows of Evaporation Materials A and B are Mixed Area 12 Running substrate 13 Guide rollers 14, 15 Collection pots 16, 17 Collected matter discharge device 18, 19 First discharge valve 20, 21 Second discharge valve 22, 23 Charging valve 24, 25 Inert gas 26, 27 Vacuum exhaust valve 28, 29 Vacuum exhaust 30, 31 Dropping ineffective vapor deposit 32, 33 Collected droplet 34, 35 Pressure equalizing pot 36, 37 Exhaust pressure valve 39 Heater plate power supply 40 Heater plate 41 Hot panel 42 heating element 43 heat insulating material 44, 45 temperature measuring unit 46, 47 hot panel temperature detector 48 comparator 49 hot panel temperature setter 50 deposition preventive plate 51 invalid deposition 52 temperature Control unit

Claims (12)

(57) [Claims] 1. A disabled deposit removing device of a deposition apparatus for forming an alloy layer on the surface of the evaporation object by vapor deposition using a plurality of evaporation material in a vacuum, the evaporation material to be deposited besides the evaporation object Depending on the alloy ratio
A plurality of heater plates respectively provided in a plurality of zones divided in the downward direction, and a temperature control for maintaining the set temperature of each heater plate above the temperature of the liquidus line corresponding to the alloy ratio deposited in each zone. comprising apparatus and the, ineffective deposit removing device of a vapor deposition apparatus characterized by melting, dropping the invalid deposit was deposited on the heater plate surface. 2. When the melting and dropping temperature of the alloy is lower than that of the upper heater plate, the heater plate is
The angle θ formed between the heater plate and the horizontal surface of the heater plate is in the range of θ ≦ 90 °, and the ineffective deposits that are melted and dropped from each heater plate are arranged so as not to drop on the lower heater plate. The ineffective deposit removing device of the vapor deposition device according to claim 1, wherein. 3. The angle θ of the heater plate in the uppermost zone.
Is in the range of 180 °>θ> 90 °. 3. The ineffective deposit removing device of the vapor deposition device according to claim 2, wherein. 4. When the melting and dropping temperature of the alloy is higher in the lower heater plate than in the upper heater plate, the heater plate is
The angle θ between the heater plate deposition surface and the horizontal is 180 °> θ
2. The vapor deposition apparatus according to claim 1, wherein the ineffective vapor deposition material which is in the range of> 90 [deg.] And melts / drips from each heater plate is arranged so as to be dripped on the lower heater plate. Ineffective deposit removal device. Set temperature according to claim 5, wherein the plurality of heater plates toward the upper side of the heater plate from the most bottom side of the heater plate, the relative
There is a maximum temperature during changes in order from low to high temperatures,
From this highest temperature heater plate to the upper heater plate
Therefore, when changing from a relatively high temperature in order to lower temperature, the heater plate is from top bottom of the heater plate to the maximum temperature of <br/> heater plate in the middle the angle theta is theta ≦ 90 ° In range,
Wherein the angle of the upper heater plate from the heater plate of the highest temperature theta in the middle are arranged to be in the range of 180 °>θ> 90 °, the vapor deposition apparatus according to claim 1, characterized in that Ineffective deposit removal device. Set temperature according to claim 6, wherein said plurality of heater plates toward the upper side of the heater plate from the most bottom side of the heater plate, the relative
There is a minimum temperature during changes in order to low from high temperature,
From this lowest temperature heater plate to the upper heater plate
Therefore, when changing from a relatively low temperature in order to a high temperature, the heater plate, in the middle of the uppermost lower side of the heater plate the lowest temperature
The angle θ is 1 up to the heater plate one degree below the heater plate.
80 °>θ> in the range of 90 °, the middle of ≦ the angle of the top side of the heater plate from the lowest temperature of <br/> heater plate of theta 90
° in the range of, and melt-dropping the respective heaters disabled deposits from the top side of <br/> heater plate from the heater plate minimum temperature
The lowermost heater plate or the heater of the lowest temperature that is individually set to be higher than the set temperature of the plate
The device for removing ineffective deposits of a vapor deposition device according to claim 1, wherein the device is arranged so as to drop the heater plate directly below or below the heater plate . 7. The vapor deposition apparatus according to claim 2, further comprising a collection pot for directly dropping the ineffective vapor deposition material that is melted and dropped on the lower side of the lowermost heater plate. Ineffective deposit removal device. 8. A collecting pot is further provided so that the ineffective vapor deposition material that is melted and dropped below the lowermost heater plate is dropped through the lowermost heater plate or partly directly. The ineffective deposit removing device of the vapor deposition device according to claim 4 or 6. 9. A pressure equalizing pot for discharging the ineffective vapor deposition material collected in the collecting pot to the outside, and when discharging from the collecting pot to the pressure equalizing pot, the pressure inside the pressure equalizing pot is the same as that of the vacuum chamber. When it is held at the temperature and dropped by gravity and discharged from the pressure equalizing pot to the outside, the vacuum chamber and the pressure equalizing pot are shut off, and the pressure equalizing pot is discharged to the outside at the same pressure as the atmospheric pressure. The ineffective deposit removing device of the vapor deposition device according to claim 7 or 8, characterized in that. 10. The ineffective deposit removing device of the vapor deposition device according to claim 2, wherein each of the heater plates is configured to be movable in the angle θ and the horizontal position. . 11. The vapor deposition surface of each heater plate is one of a flat surface, a convex surface, and a concave surface.
The ineffective deposit removing device of the vapor deposition device according to. 12. The method of claim 11, wherein each heater plate, a heating element, a predetermined temperature by the heating element provided et the its back side has a deposition surface
The vapor deposition according to claim 1 , further comprising: a hot panel that is heated once , wherein the temperature control device measures the temperature of the hot panel from the back side of the hot panel and controls the heater plate temperature. Equipment ineffective deposit removal device.