JP3391030B2 - Electronic device manufacturing method and pattern exposure method - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention exposes a pattern on a substrate on which electronic devices (semiconductors, liquid crystal elements, etc.) are formed.
The method of manufacturing an electronic device and the method of exposing a pattern of
A mask having a region is overlaid on the substrate through a minute gap,
The amount of the gap between the substrate and the mask in the proximity exposure for transferring the mask pattern onto the substrate can be detected with high precision and in a short time with a simple configuration and method, and the predetermined amount of gap can be set. Suitable for electronic devices
The present invention relates to a manufacturing method and a pattern exposure method .

[0002]

2. Description of the Related Art Conventionally, a method of detecting a minute gap (several tens of μm) between a mask and a wafer in proximity exposure is manufactured because the accuracy of the gap amount and the setting thereof directly affect the patterning accuracy. In order to influence the performance of electronic devices, various methods have been proposed, such as a method using an air micrometer that indirectly determines the gap amount and a method that directly measures using an ultrasonic wave or an optical system. .

As a method of using the above optical system, a focus detection method for detecting each surface position of a mask and a wafer, a method for measuring a distance between a mask pattern and a projection pattern on a substrate, and an interference fringe formed on a light receiving surface. There is a method of using.

In the focus detection method, the patterns provided on the mask surface and the substrate surface are separately detected by an optical system,
The gap amount between the two is measured and detected from the difference between the focal positions, which is an indirect detection method.

Next, a method for measuring the interval between the mask pattern and the projected pattern on the substrate (see, for example, Japanese Patent Laid-Open No. Sho 61-61).
-267321), a pattern is provided on a mask,
The pattern is illuminated obliquely and its shadow is projected on the wafer, and an optical detection system arranged diagonally above the opposite side of the mask produces a real image of the pattern provided on the mask and a virtual image of the mask pattern projected on the wafer. Detecting the gap between the real image and the virtual image, calculating the gap amount from the gap to set the gap between the mask and the wafer to a predetermined value, and setting the gap amount accurately. It is intended. In this case, the gap amount can be detected by measuring the distance between the mask pattern and the pattern projected on the wafer with a linear image sensor.

Next, in the method using the interference fringes (for example, Japanese Patent Laid-Open No. 64-47904), laser light is incident on the mask obliquely from above and the reflected light from the wafer and the mask is received and the laser light is received. When the period length (pitch) of the interference fringes formed on the light receiving surface is detected and the size of the gap between the mask and the wafer is determined from this period length, the incident angle to the mask upper surface is adjusted to the Brewster angle and Light is converted to TM wave (p polarized) or reflected light is converted to TM
With a configuration in which only the wave component (p-polarized component) is taken out to form interference fringes, the purpose is to eliminate the adverse effects of reflection on the upper surface of the mask, stabilize cycle length detection, and improve reliability. Is.

[0007]

To detect the gap between the mask and the substrate during pattern exposure, it is desirable to directly measure the absolute value of the gap amount in order to improve the accuracy.
In the conventional focus detection method, the absolute value of the gap amount cannot be directly measured, and the reliability of the mechanism for moving the focus position is not sufficiently reliable, which affects the detection accuracy. It was the actual situation that the detection and setting of could not be expected.

Next, in the method of measuring the interval between the mask pattern and the projection pattern on the substrate, which is designed to directly measure the absolute value of the gap, it is necessary to set a pattern having a predetermined shape at a predetermined position with respect to the mask. Therefore, it is necessary to secure a special space for pattern setting in the mask design, and therefore, the irradiation of the mask for gap detection must be limited to the pattern setting position. It had a problem that it was not available.

On the other hand, in the method of detecting the pitch of the interference fringes, the relationship between the incident angle and the reflection angle of the laser beam shown in FIG. 9 (refractive index n ₁ = 1.0 in air, refractive index n ₂ = mask) As can be seen from the relationship (in the case of 1.5), the incident angle of the TM wave is defined as Brewster's angle (hereinafter, also referred to as polarization angle) ip ₁ = 56.
When the light is incident on the upper surface of the mask at an angle of 3 °, the reflectance becomes zero as shown by the solid line Rp (p-polarized light) in the figure, so that all the laser light is incident on the mask. Then, the incident laser light has a refraction angle of 33.7 in the mask.
Proceed at ° and reach the bottom of the mask. Further, in the case of coming out from the lower surface of the mask into the air (gap portion between the mask and the wafer), as shown by a dotted line Rp in the figure, the Brewster's angle ip
_{Since the} reflectance becomes zero at ₂ = 33.7 °, all the laser light does not reflect on the lower surface of the mask but passes through and reaches the wafer.

As described above, when the TM wave is obliquely incident on the mask, if the incident angle with respect to the upper surface of the mask is made to match the Brewster's angle, the incident T wave is incident.
The M waves do not reflect on the upper and lower surfaces of the mask, and all reach the wafer surface and are reflected on the surface. Then, the reflected light is transmitted from the lower surface of the mask through the inside of the mask, and then is emitted from the upper surface of the mask at the same angle as the incident angle from the obliquely upper side to the mask and on the opposite side to the normal line. Therefore, in the above structure, the two-beam interference due to only the reflected light from the upper surface of the wafer and the lower surface of the mask does not occur, and therefore no interference fringes are formed.
There is a problem that the size of the gap cannot be obtained.

The present invention has been made in view of the above problems of the prior art.
A method of manufacturing an electronic device capable of detecting a gap amount between a mask and a substrate during pattern exposure of the electronic device with a simple configuration and method, with high accuracy and in a short time, and setting the gap amount to a predetermined value. Pattern exposure
The purpose is to provide a method .

[0012]

In order to achieve the above object, an electronic device manufacturing method and a pattern exposure method according to the present invention include both a substrate and an exposure mask which is superposed on the substrate via a gap. To irradiate light from a light source, to detect the gap amount using the reflected light by this irradiation, when exposing the pattern on the substrate, a slit pattern,
The light from the light source transmitted through the first lens in order is incident on the region of the mask through which the light can be transmitted to the upper surface of the substrate at an incident angle of 50 ° to 70 °, and the lower surface of the mask and the mask are exposed. Project the slit pattern on the upper surface of the substrate,
The light intensity of the reflected light is measured by receiving the reflected light with the sensor through a second lens having a numerical aperture that allows the sensor to detect the projected slit pattern. Then, the measured light intensity is photoelectrically converted to detect an interval between the reflected light of the slit pattern on the lower surface of the mask and the reflected light of the slit pattern on the upper surface of the substrate, and a gap amount corresponding to the detected interval is desired. The gap amount between the substrate and the mask is changed when the gap amount is different from the above, and the pattern is exposed on the substrate when the gap amount corresponding to the detected gap is a desired gap amount. .

In the present invention, the electronic device in the method of manufacturing the electronic device may be a semiconductor device or a liquid crystal element, and the substrate in the pattern exposure method may be a substrate used for the semiconductor device or the liquid crystal element. The slit width of the slit pattern may be a value close to the resolution limit of the first lens and the resolution limit of the second lens. Further, in the present invention, when the gap amount corresponding to the detected interval is different from the desired gap amount, the gap between the substrate and the mask is changed so as to reduce the difference between the respective gap amounts. Alternatively, the change in the gap may be performed by moving the substrate.

Furthermore, in the present invention, light is incident on the mask may be S-polarized light component (e.g. S polarized light component of the laser beam).

[0015]

[0016]

[0017]

With the above structure, the s-polarized component (hereinafter, also referred to as TE wave) of the laser light is passed through the lens through the shape pattern having a small area, for example, a rectangular slit, with respect to the mask on the substrate. for example, irradiation with 50 ° to 70 °, but about 30% of該照Shako is reflected by the upper surface of the mask, the remaining 70% reach the mask lower surface and transmitted through the mask is incident on the mask. Angle transmitted through the mask is determined by the refractive index of the mask (typically, 1.5 glass). The mask lower surface, as well as projection imaging the slit image by light transmitted through the said mask, and reflects about 30% of the transmitted light, is emitted from the mask upper surface reflected light of the projected image passes through the inside mask . On the other hand, the remaining about 70% of the transmitted light is emitted into the air in the gap between the mask and the substrate and reaches the substrate. The intensity of the light emitted into the air is about half the intensity of the light incident on the mask . The slit image is projected and formed on the substrate by the light reaching the substrate similarly to the lower surface of the mask, and the reflected light of the projected image is transmitted from the lower surface of the mask into the mask and is emitted from the upper surface of the mask.

The emitted reflected light of each projection image is received through the lens of the light receiving optical system in the opposite direction of the same angle as the irradiation angle with respect to the normal line standing on the mask , The slit image is projected and imaged on the linear image sensor. A signal waveform of a certain level or higher is detected in this projected image, photoelectrically converted, two peak values are extracted, and the interval between the peak values is measured. As for this interval, the relationship between the amount of the gap between the mask and the substrate and the interval between the slit images projected and imaged on the linear image sensor is compared and calculated with the relationship via the previously input arithmetic means, The difference between the measured gap and the desired gap amount is calculated. Then, an interval between the peak value and the difference is zero, for example, determined by a change in gap amount by vertical movement of the substrate, and detects the desired gap amount, mass
Set to click and the gap amount of the detected both the substrate.

[0019]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT An embodiment of the present invention will be described below with reference to FIGS.
And it demonstrates with reference to FIG. FIG. 1 is an explanatory diagram of a basic configuration of an optical system for detecting and setting a gap between a mask and a substrate in proximity exposure, FIG. 2 is a diagram showing a state of reflection and transmission of irradiation light on the mask and the substrate, and FIG. Calculation method explanatory diagram, FIG. 4 is an explanatory diagram of the relationship between the gap between the slit images on the linear image sensor and the gap amount, FIG. 5 is an overall schematic configuration diagram of the gap detection / setting device between the mask and the substrate, and FIG. A flow chart of the setting method, and FIG. 7 is a perspective view showing an example in which the apparatus shown in FIG. 5 is applied to proximity exposure.

In FIG. 1, reference numeral 1 is an exposure mask , and 1a.
Is the upper surface of the mask 1 and 1b is the lower surface of the mask 1. Reference numeral 2 denotes a substrate which is superposed on the lower surface 1b of the mask 1 through a minute gap g, and 3 denotes an irradiation optical system. The irradiation optical system 3 enlarges and collimates a laser light source 6 and laser light emitted from the laser light source 6. The collimator lens 7, the slit plate 8 provided with a slit (rectangular shape in this case) 20 having a minute width W, and the slit 20 are projected onto the lower surface 1b of the mask 1 (hereinafter, simply referred to as the lower surface 1b) and the substrate 2 respectively. It is composed of an image-forming lens 9. 1 (b) is shown in FIG.
In the bb arrow view of (a), the slit image 20a projected on the lower surface 1b and the slit image 20 projected on the substrate 2 are shown.
b is shown.

A light receiving optical system 4 receives the reflected light of the slit images 20a and 20b from the mask upper surface 1a.
A lens 10 for receiving light at a reflection angle that is the same as the irradiation angle of the laser light is provided obliquely above the side opposite to the irradiation light with respect to the normal line set up. Reference numeral 11 is a linear image sensor for projecting the slit images 20a, 20b through the lens 10 onto the light receiving pixel array and detecting a signal waveform of a certain level or higher in the projected image. Reference numeral 12 is a sensing unit of the linear image sensor 11. Since it is narrow, a cylindrical lens that compresses the slit images 20a and 20b at the time of projection image formation on the light receiving pixel array, and 13 photoelectrically converts the signal waveform detected by the linear image sensor 11 and outputs it as a contrast of an electric signal. Circuit. Reference numerals 11, 12, and 13 form a detection system 5 for the slit images 20a and 20b.

The numerical aperture of the lens 9 in the irradiation optical system 3 and the lens 10 in the light receiving optical system 4 (hereinafter referred to as NA
And a width W of the slit 20 are set as follows. That is, the lower surface 1b and the substrate 2
When and are overlapped with each other via the minute gap g, the distance d between the slit image 20a formed on the lower surface 1b and the slit image 20b formed on the substrate 2 is g / cos θ, and the maximum to be detected is When the gap is G, the distance d naturally becomes G / cos θ, but it is necessary to prevent the slit images 20a and 20b from defocusing on the surface to be imaged within the range of the maximum gap G. Is. for that reason,
The NAs of the lenses 9 and 10 are set by the following equation.

[0023]

[Equation 1]

Here, λ: wavelength of light, θ: incident angle,
G: Maximum gap amount to be detected.

The slit width W is set by the following equation by the determination of the NA.

[0026]

[Equation 2]

Where k is a constant (0.6 to 0.8),
λ: wavelength of light, θ: incident angle, G: maximum gap amount to be detected.

The value of the slit width W obtained by the equation (2) indicates the resolution limit of the lenses 9 and 10. This is because when the gap g is extremely small, the slit image 20a.
And 20b may approach each other and overlap each other, and it may not be possible to clearly detect each image. That is,
This is because if the value of the slit width W is made considerably larger than the resolution limit of NA in the lenses 9 and 10, the same phenomenon occurs and it becomes impossible to clearly detect each image. It is desirable that the value of W be as close as possible to the resolution limit of the lenses 9 and 10.

Next, in FIG. 2, the s-polarized component of the laser light emitted at the incident angle θ is partially reflected on the upper surface 1 a of the mask 1 and the rest enters the mask 1. In this case,
When the incident angle θ is, for example, 67 ° as shown in FIG. 3, the reflectance becomes 30% as shown in the figure, so that the remaining 70% enters the mask 1. The incoming TE wave has a refraction angle of 38 ° because the mask 1 has a refractive index of 1.5.
To reach the lower surface 1b. Therefore, the slit image 20a is projected and imaged on the lower surface 1b by the light transmitted through the mask 1, and about 30% of the transmitted light is reflected at the position,
The remaining about 70% is emitted into the air in the gap g and the substrate 2
To reach the top. The reflected light on the lower surface 1b is divided into one that is emitted from the upper surface 1a of the mask 1 and one that is reflected by the upper surface 1a again and enters the mask 1, and this operation is repeated. On the other hand, the light arriving on the substrate 2 is
The slit image 20b is projected and imaged on the surface, and after being almost specularly reflected on the surface, reflection, transmission and emission are repeated on the lower surface 1b and the upper surface 1a. Where the top surface 1
The light emitted from a is incident angle θ = in the direction opposite to the irradiation direction with respect to the normal line standing on the mask upper surface 1a.
The light is emitted at θ ′ = 67 ° which is the same angle as 67 °.

The numbers attached to the respective optical paths in FIG. 2 show the ratio of the light intensity when the incident intensity of the s-polarized component of the laser light on the mask upper surface 1a is 1.0.
The light obtained by forming the slit image 20a on the lower surface 1b is the upper surface 1a.
The light intensity of the light emitted from the substrate is about 15%, and the light intensity of the light obtained by projecting the slit image 20b on the substrate 2 from the upper surface 1a is about 24%.

In FIG. 3, as in the case of FIG. 1, when the slit 20 is irradiated at an incident angle θ and projected and imaged on the lower surface 1b and the substrate 2, the slit image 20a imaged on the lower surface 1b and the substrate are formed. The distance d to the slit image 20b formed in 2 is represented by g / cos θ when the gap is g, and the distance between the projected images 20A and 20B of the slit images 20a and 20b projected on the linear image sensor 11 is represented by D
Is D = 2 · n, where n is the magnification of the detection system 5.
-Represented by gsinθ. This is the incident angle θ = 6
As for the case of 7 °, the interval D is [1.84n ·
g]. The gap g can be easily and easily obtained by measuring the gap D from the correlation between the gap D and the gap g.

Next, a specific method of calculating the interval D will be described with reference to FIG. FIG. 4A shows a projected image on the light receiving pixel row 11a of the linear image sensor 11, and FIG. 4B shows the relationship between the number of pixels m of the linear image sensor 11 and the gap g. In FIG. 4A, the interval D is the pixel pitch p and the number of pixels m between the projected images 20A and 20B.
It can be expressed by m · p. In this case, the pixel pitch p of the linear image sensor 11 is known. On the other hand, as can be seen from FIG. 4 (b), the number of pixels m and the gap g are in a proportional relationship, and the interval D represented by 2 · n · g sin θ is equal to the enlargement magnification n and the incident angle θ. 3 and the specifications of the light receiving optical system 4 are known. For this reason,
The gap g is uniquely determined only by measuring the number of pixels m between the projected images 20A and 20B.

Therefore, the relationship between the number of pixels m of the linear image sensor 11 and the gap g is tabulated in advance and data is input, and the value of the gap g can be calculated from the obtained number of pixels m with high accuracy and in a short time. It becomes possible to calculate.

An embodiment of an apparatus for implementing the method of detecting and setting the gap between the mask and the substrate will be described with reference to FIG. In the figure, the same symbols as those in FIG. 1 indicate the same components. In the figure, 14 is an interface circuit, 15 is a storage operation unit connected to the linear image sensor 11 via the photoelectric conversion circuit 13 and the interface circuit 14,
16 is data tabulating the relationship between the number of pixels m of the linear image sensor 11 shown in FIG.
The data 16 is stored in the storage operation unit 15. Reference numeral 21 is a mask holder for fixedly supporting the mask 1, and 22 is a substrate 2.
A substrate chuck for fixedly supporting the substrate chuck 23;
An up-and-down moving mechanism for mounting and moving in the Z-axis direction, and a driving circuit 24 for driving the up-and-down moving mechanism 23 are connected to the storage operation section 15 via the interface circuit 14.

A method for specifically detecting and setting the gap g by the apparatus shown in FIG. 5 will be described with reference to the flowchart of FIG. First, mask 1 and mask holder 2
1 and the substrate 2 is set on the substrate chuck 22. The gap g ₁ at the time of setting is set to a value larger than the desired set gap g. In this state, the linear image sensor 11 detects a waveform of a certain level or higher, and two peak waveforms are extracted from the detected waveforms. Which waveform of the extracted peak waveform is mask 1
It is easy to determine which is the substrate 2 because the projection position on the linear image sensor 11 is known from the configuration of the light receiving optical system 4. Then, in order to further facilitate extraction of the two peak waveforms, the light receiving optical system 4 and the linear image sensor 11 are set to the maximum light intensity (30%) of the reflected light from the mask 1 and the substrate 2.
The light reflected from the mask upper surface 1a is outside the detection range of the linear image sensor 11.
This is easily possible because the value of the gap g is very small with respect to the thickness of the mask 1.

Next, the pixel addresses A and B on the linear image sensor 11 having the two detection waveforms are detected. For the pixel address in this case, the center of the detected waveform is detected, and the center is set as the pixel address. The detected pixel addresses A and B are input to the storage / calculation device 15. However, as shown in FIG. 4B, the relationship between the number of pixels m and the gap g is uniquely determined. a, the number of pixels m ₁ between B is measured, the gap g ₁ corresponding to該画prime m ₁ is detected.
Subsequently, in order to compare the number of pixels m ₁ with the number of pixels m with respect to the desired setting gap g, the vertical movement mechanism 23 is driven via the drive circuit 24, and the difference between the number of pixels m ₁ and the number of pixels m becomes zero. The substrate 2 is moved together with the substrate chuck 22. The position where the difference in the number of pixels becomes zero is the position of the desired gap g to be detected, and the gap detection / setting is completed.

As described above, in the present invention, the mask 1
Alternatively, it is not necessary to provide a specific pattern on the substrate 2, and therefore there are restrictions such as securing a special space for pattern setting in the design of the mask 1 and performing irradiation on the mask 1 only at the pattern setting position. Never. Therefore, the desired gap g can be directly detected by an absolute value, and highly accurate gap detection and setting can be performed.

FIG. 7 shows a practical example, 30 is a gap detection system including the irradiation optical system 3, the light receiving optical system 4 and the detection system 5,
An exposure illumination system 31 is provided above the mask 1.
When the present invention is applied to an actual proximity exposure apparatus, since the areas of the mask 1 and the substrate 2 are large,
High-accuracy gap detection / setting cannot be performed unless the inclinations of both surfaces are accurately controlled. This can be dealt with by detecting at least three gaps g in the plane of the mask 1 and the substrate 2 as shown in the figure, but in the present embodiment, the gap detection system 30 is placed in the plane. Of the substrate chuck 22, and the vertical movement mechanism 2 of the substrate chuck 22 is provided at each of the three positions.
3 are arranged so that they can be driven independently of each other, and an exposure illumination system 31 and an alignment detection optical system (not shown) for aligning the patterns of the mask 1 and the substrate 2 are provided above the mask 1. There is. By performing the above-described gap detection / setting method for each of the three points in this configuration, it is possible to set a predetermined gap with high accuracy and in a short time with a simple configuration and method. Become.

[0039] Next Fig. 8 is a basic configuration diagram of an optical system of the gap detection and setting between the mask and the substrate in the up Rokishimiti exposure of the present invention is a modification of the embodiment. In the figure, the same symbols as those in FIG. 1 indicate the same components. In the figure, reference numeral 18 is a glass plate provided with a rectangular pattern 40 having a minute width W that shields laser light. FIG. 8B is the same as FIG.
In the bb arrow view of (a), 40a shows the pattern image projected on the mask lower surface 1b, and 40b shows the pattern image projected on the substrate 2. The configuration other than the above is the same as the configuration shown in FIG. Structure of this modification is that the front you施例has a laser beam is transmitted through the slit 20, on the contrary, which was shielded by the laser beam pattern 40, measured intervals of the peak value of the projected image algorithm for setting detects a predetermined gap g and is similar to the method of the real施例the foregoing, it is of course provides the same effects.

[0040] Incidentally, the upper you施例is, the present invention has been described for the case of applying a proximity exposure, the present invention is not limited thereto, for example, also applicable in the X-ray exposure, etc. Of course.

[0041]

As described above, the present invention provides an electronic device.
In the method and pattern exposure method of the chair, and the substrate
The gap amount between the mask and the mask can be detected with high accuracy and in a short time with a simple configuration and method, and a predetermined gap amount can be set.

[Brief description of drawings]

FIG. 1 is a diagram illustrating a basic configuration of an optical system for detecting and setting a gap between a mask and a substrate in proximity exposure according to an embodiment of the present invention.

FIG. 2 is a diagram showing states of reflection and transmission of irradiation light on a mask and a substrate.

FIG. 3 is an explanatory diagram of a method of calculating a gap amount.

FIG. 4 is an explanatory diagram of a relationship between a gap between slit images on a linear image sensor and a gap amount.

FIG. 5 is an overall schematic configuration diagram of a device for detecting and setting a gap between a mask and a substrate.

FIG. 6 is a flowchart of a gap detection / setting method.

7 is a perspective view showing an example in which the apparatus shown in FIG. 5 is applied to proximity exposure.

FIG. 8 is a modification of the present embodiment .

FIG. 9 is a diagram showing a relationship between an incident angle of laser light and reflectance.

[Explanation of symbols]

1 ... Mask, 1a ... Upper surface, 1b ... Lower surface, 2 ... Substrate, 3 ...
Irradiation optical system, 4 ... Receiving optical system, 5 ... Detection system, 6 ... Laser light source, 8 ... Slit plate, 9, 10 ... Lens, 11 ... Linear image sensor, 13 ... Photoelectric conversion circuit, 15 ... Storage arithmetic unit, 16 ... data, 20 ... slits, 20a, 20
b ... Slit image, 20A, 20B ... Projected image, 23 ... Vertical movement mechanism, 30 ... Gap detection system, 40 ... Pattern.

─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Yukihiro Shibata 292 Yoshida-cho, Totsuka-ku, Yokohama-shi, Kanagawa Hitachi, Ltd. Production Technology Laboratory (56) Reference JP-A-62-20311 (JP, A) (58) Fields surveyed (Int.Cl. ⁷ , DB name) H01L 21/027 G03F 7/20 521

Claims (16)

(57) [Claims] 1. A substrate is irradiated with light from a light source on both a substrate and an exposure mask which is superposed on the substrate via a gap, and the amount of the gap is detected by utilizing the reflected light resulting from the irradiation. In a method of manufacturing an electronic device, which exposes a pattern on a substrate, light from the light source transmitted through a slit pattern and a first lens in this order is 50 ° with respect to an area of the mask through which the light can be transmitted to the upper surface of the substrate. The reflected light is incident on the lower surface of the mask and the upper surface of the substrate with an incident angle of ˜70 °, and a second lens having a numerical aperture that allows the sensor to detect the projected slit pattern. Is measured by the sensor to measure the light intensity of the reflected light, and the measured light intensity is photoelectrically converted to reflect light of the slit pattern on the lower surface of the mask and the light on the substrate. The distance between the reflected lights of the slit pattern on the surface is detected, and when the gap amount corresponding to the detected gap is different from the desired gap amount, the gap between the substrate and the mask is changed to detect the gap. A method of manufacturing an electronic device, comprising exposing a pattern on the substrate when the gap amount corresponding to the interval is a desired gap amount. 2. The light from a light source is applied to both a substrate and an exposure mask which is superposed on the substrate via a gap through a slit pattern and a first lens, and the mask is provided by this irradiation. The reflected light of the slit pattern on the lower surface and the upper surface of the substrate is received by a sensor via a second lens to measure the light intensity of the reflected light, and the measured light intensity is photoelectrically converted to form a light on the lower surface of the mask. If the gap between the reflected light of the slit pattern and the reflected light of the slit pattern on the upper surface of the substrate is detected, and the gap amount corresponding to the detected gap is different from the desired gap amount, the gap between the substrate and the mask. Of the electronic device that exposes a pattern on the substrate when the gap amount corresponding to the detected interval is a desired gap amount. A manufacturing method, wherein the first lens and the second lens have numerical apertures that allow the sensor to detect the respective slit patterns, and can transmit light from the light source to the upper surface of the substrate. The method for manufacturing an electronic device, wherein the mask region is arranged so that light is incident at an angle of 50 ° to 70 °. 3. The method of manufacturing an electronic device according to claim 1, wherein the electronic device is a semiconductor device or a liquid crystal element. Wherein the slit width of the slit pattern,
4. The method of manufacturing an electronic device according to claim 1, wherein the resolution is set to a value close to the resolution limit of the first lens and the resolution limit of the second lens. If the wherein the amount gap corresponding to interval the detected differs from the desired gap amount, so as to reduce the difference of該夫s gap amount, varying the gap between the substrate and the mask 5. The method according to claim 1, wherein
A method for manufacturing an electronic device according to any one of 1. Wherein the change in the gap, a method for fabricating an electronic device according to claim 5, characterized in that by moving the substrate. 7. A method of manufacturing an electronic device according to any one of claims 1 to 6, in which the light is incident on the mask is characterized in that the S-polarized light component. 8. A method of manufacturing an electronic device according to any of claims 1 to 6, characterized in that light to be incident on the mask is S-polarized light component of the laser beam. 9. A substrate and an exposure mask, which is superposed on the substrate via a gap, are irradiated with light from a light source, and the amount of the gap is detected by utilizing the reflected light resulting from the irradiation. In the pattern exposure method of exposing a pattern on the upper surface, the light from the light source transmitted through the slit pattern and the first lens in this order is 50 ° to 70 ° with respect to the region of the mask through which the light can be transmitted to the upper surface of the substrate. The slit pattern is projected on the lower surface of the mask and the upper surface of the substrate by incident at an incident angle of °, and the reflected light is reflected through the second lens having a numerical aperture that enables the projected slit pattern to be detected by a sensor. The light intensity of the reflected light is measured by receiving with a sensor, and the measured light intensity is photoelectrically converted to reflect the reflected light of the slit pattern on the lower surface of the mask and the upper surface of the substrate. The gap between the reflected light of the slit pattern is detected, and when the gap amount corresponding to the detected gap is different from the desired gap amount, the gap between the substrate and the mask is changed to detect the gap. A pattern exposure method comprising: exposing a pattern on the substrate when the gap amount corresponding to is a desired gap amount. 10. A substrate and an exposure mask which is superposed on the substrate via a gap are irradiated with light from a light source through a slit pattern and a first lens, and the mask is formed by this irradiation. The reflected light of the slit pattern on the lower surface and the upper surface of the substrate is received by a sensor via a second lens to measure the light intensity of the reflected light, and the measured light intensity is photoelectrically converted to form a light on the lower surface of the mask. If the gap between the reflected light of the slit pattern and the reflected light of the slit pattern on the upper surface of the substrate is detected, and the gap amount corresponding to the detected gap is different from the desired gap amount, the gap between the substrate and the mask. When the gap amount corresponding to the detected interval is a desired gap amount, pattern exposure for exposing a pattern on the substrate A method, wherein the first lens and the second lens have numerical apertures that enable the respective slit patterns to be detected by the sensor, and can transmit light from the light source to the upper surface of the substrate. A pattern exposure method, which is arranged so that light is incident on the region of the mask at an angle of 50 ° to 70 °. 11. The substrate is a substrate used for a semiconductor device or a liquid crystal element.
Or the pattern exposure method according to item 10. 12. A pattern according to claim 9, 10 or 11, characterized in that the slit width of the slit pattern, and a value close to the resolution limit of the resolution limit and the second lens of the first lens Exposure method. 13. When the gap amount corresponding to the detected distance is different from the desired gap amount, the gap between the substrate and the mask is changed so as to reduce the difference between the respective gap amounts. 13. The pattern exposure method according to any one of claims 9 to 12. 14. The pattern exposure method according to claim 13, wherein the change of the gap is performed by moving the substrate. 15. The pattern exposure method according to claim 9, wherein the light incident on the mask is an S-polarized component. 16. The light incident on the mask is an S-polarized component of laser light.
4. The pattern exposure method according to any one of 4 above.