JP3378680B2 - Semiconductor package - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor package.

[0002]

2. Description of the Related Art Generally, an electric connection between an IC chip or an LSI chip and a printed wiring board which is a mother board is made through a semiconductor package. In recent years, resin-encapsulated semiconductor packages (so-called plastic packages) have become the mainstream. When manufacturing a plastic package, it is necessary to surely dissipate the heat generated by the LSI chip in order to prevent malfunction and thermal destruction of the LSI chip. Therefore, in the conventional plastic package, for example, a measure is taken to dispose a radiator, which is a plate material made of a high thermal conductive material such as Cu-W, on the back surface side of the chip mounting portion.

However, if an attempt is made to secure a large heat radiation area in the package by using a large heat radiator, the area where the wiring cannot be formed (dead area) is increased by the area of the heat radiation area. For this reason,
The size of the entire package has to be increased, resulting in deterioration of electrical characteristics such as a decrease in signal propagation speed. On the contrary, if the dead area is made as small as possible to maintain the current state of the package size, the heat radiator must be made small, and as a result, a sufficient heat radiation area cannot be secured.

As a means for solving such a problem,
2. Description of the Related Art There has conventionally been proposed a semiconductor package in which a radiator formed by forming a high-density wiring layer on one side surface of a plate material made of a high thermal conductive material is mounted in a window portion of a base unit having input / output terminals. In the case of this semiconductor package, an LSI chip or the like is mounted in the electronic component mounting area in the high-density wiring layer. A plurality of bonding pads are arranged on the outer edge of the electronic component mounting area. Further, a plurality of connection pads are arranged around the window of the base unit so as to correspond to the pads. These pads are electrically connected to each other via bonding wires. Therefore,
The semiconductor package described above is excellent in both heat dissipation and compactness.

Further, in this type of package, it is desirable that the electrical connection portion such as a bonding wire is covered and protected by some means. Therefore, from the viewpoint of improving reliability, resin sealing may be performed by the potting method.

[0006]

However, since the sealing resin used in the potting method has fluidity, it is difficult to accurately apply the sealing resin at a predetermined position. Therefore, as shown in FIGS. 6A and 6B, a portion where the sealing resin 40 spreads beyond the bonding pad formation region R1 to the input / output terminal formation region R2 is likely to be partially formed. In this case, a difference occurs in the electric resistance value between the portion where the sealing resin 40 reaches the input / output terminal 41 and the portion where the sealing resin 40 does not reach the input / output terminal 41, and the electrical characteristics of the semiconductor package 42 deteriorate.

Further, since the outer shape of the sealing resin 40 becomes irregular, the appearance of the entire semiconductor package 42 is impaired. Further, if the encapsulating resin 40 is attached to the input / output terminals 41, it becomes difficult to insert the encapsulating resin 40 into the plated through holes, and a problem is likely to occur during mounting. And
When such a flow of the sealing resin 40 occurs, the amount of resin must be increased in order to avoid exposing the bonding wire 43. As a result, the spread of the sealing resin 40 is further expanded.

In order to prevent the sealing resin 40 from adhering to the input / output terminal 41, for example, the input / output terminal forming region R2
It goes without saying that the width of the region R3 between the bonding pad forming region R1 and the bonding pad forming region R1 may be secured to a certain extent. However, this method runs counter to the downsizing requirements.

The present invention has been made to solve the above problems, and an object thereof is to prevent deterioration of electrical characteristics and deterioration of appearance due to the flow of a sealing resin without increasing the size of the outer shape. It is to provide a semiconductor package that can be reliably avoided.

[0010]

In order to solve the above-mentioned problems, the invention according to claim 1 uses a plate material made of a highly heat-conductive material as a heat-dissipating region on one side and a high-density wiring on the opposite side. An electronic component mounting area including a layer, an electronic component mounting portion is provided on the high density wiring layer, and a plurality of connection terminals electrically connected to the electronic component side through the high density wiring layer are mounted on the electronic component. A heat dissipating member disposed at the outer edge of the area and a window portion for exposing the heat dissipating area of the heat dissipating member to the outside are provided in substantially the center of the printed wiring board, and one side surface of the printed wiring board and the window are provided. And a plurality of bonding pads are arranged around the portion, and a plurality of input / output terminals are arranged in a region outside the bonding pad formation region, and a base unit for mounting a radiator is provided. Bonde A bonding pad and the connection terminal are electrically connected to each other via a bonding wire, and the connection portion is sealed with a resin, the input / output terminal forming region of at least the base unit and the bonding. The gist is a semiconductor package in which a dam for preventing sealing resin flow is formed in a region between the pad formation region.

According to a second aspect of the present invention, in the first aspect, the dam is a frame-shaped member having a width that can be arranged in a region between the input / output terminal forming region and the bonding pad forming region, The frame-shaped member is said to be bonded via an adhesive.

According to a third aspect of the present invention, in the second aspect, the forming material of the frame-shaped member is the same type of plastic as the main forming material of the printed wiring board, and the frame-shaped member in a bonded state. Is said to be 0.15 mm to 3 mm in height.

[0013]

According to the invention described in claims 1 to 3, since a convex portion is formed on the path from the bonding pad forming region to the input / output terminal forming region, the flow of the sealing resin to the input / output terminal forming region is prevented. Be blocked.

According to the second aspect of the invention, since the dam is formed by adhering a frame-shaped member having a fixed shape, variations in its width, height and outer shape are small.
According to the invention described in claim 3, since the frame-shaped member and the printed wiring board are made of the same type of plastic, the thermal expansion coefficients of the both become substantially equal, and peeling or the like is less likely to occur at the interface between the two.

[0015]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A semiconductor package according to an embodiment of the present invention will be described in detail below with reference to FIGS.

The semiconductor package 11 of this embodiment is shown in FIG.
As shown in (1), it is basically composed of a PGA type base unit 25 and a build-up multilayer thin film wiring board 12 which is a radiator.

The build-up multilayer thin film wiring board 12 is shown in FIG.
As shown in, the main material is a phosphor bronze plate 13 as a plate material made of a high thermal conductivity material. The entire one side surface of the phosphor bronze plate 13 is a heat dissipation area,
In addition, the entire opposite side surface is an electronic component mounting area. A buildup layer B as a high-density wiring layer is formed in the entire electronic component mounting area. In this embodiment, the buildup layer B has a structure in which the insulating layers 14 and the extremely fine wiring patterns 15 are alternately laminated.
The wiring patterns 15 of the respective layers are connected to each other by via holes 16 formed in the insulating layer 14.

As shown in FIG. 3, build-up layer B
A plurality of die pads 17 as electronic component mounting portions are provided on the top. LSI chips 18 and 19 as electronic components are mounted on the die pad 17. LS
The I chips 18 and 19 and the bonding pad 20 on the buildup layer B are electrically connected via a bonding wire 21. On the outer edge of the buildup layer B, a large number of connection pads 22 as connection terminals are regularly arranged. The LSI chips 18 and 19 and the connection pads 22 are electrically connected to each other through the wiring pattern 15 on the inner layer or the outer layer of the buildup layer B.

The base unit 25 is made of a plastic plate material (in this embodiment, a glass epoxy copper clad laminate).
It is manufactured using the printed wiring board 25a whose main forming material is. This is because this type of plate material has the advantage that it is basically easy to process. As shown in FIGS. 1 and 2,
The build-up multi-layered thin film wiring board 12 is provided at a substantially central portion of the printed wiring board 25a constituting the base unit 25.
A window portion 26 having an outer shape that is substantially equal to the outer shape of the above is transparently provided. As shown in FIG. 3, a step portion 27 is provided on the inner wall surface of the window portion 26. The build-up multilayer thin-film wiring board 12 is fitted into a housing portion formed by the upper surface of the step portion 27 and the inner wall surface of the window portion 26. A large number of through holes 28 penetrating the front and back are formed around the window 26. A metal pin 29 as an input / output terminal is inserted into each through hole 28. In addition, for convenience of explanation, the substantially square-shaped band-shaped region in which the pins 29 are provided in the base unit 25 is referred to as an input / output terminal forming region R.
I will call it 2.

As shown in FIG. 1, a rectangular bonding pad 30 is arranged around the window portion 26 so as to surround the window portion 26. In addition, the substantially square-shaped band-shaped region in which the bonding pad 30 is provided in the base unit 25 is referred to as a bonding pad formation region R1 for convenience of description. The bonding pad 30 and the land 31 of the through hole 28 are
It is electrically connected via the wiring pattern 32. Also, the bonding pad 30 on the base unit 25 side
And the connection pad 22 of the build-up multilayer thin film wiring board 12
Are electrically connected to each other via a bonding wire 33. Wiring pattern 3 in the base unit 25
The surface on which 2 is formed is covered with a solder resist 34 for protecting the wiring pattern 32 from moisture and the like. Note that the substantially square-shaped band-shaped region existing between the input / output terminal formation region R2 and the bonding pad formation region R1 will be referred to as a blank region R3 for convenience of description. In the case of this embodiment, the width of the blank area R3 is about 2 mm.
It is 5 mm.

As shown in FIG. 3, the base unit 2
When the build-up multilayer thin-film wiring board 12 is mounted on No. 5, the heat radiation area of the build-up multilayer thin-film wiring board 12 is exposed from the window 26 to the outside. The semiconductor package 11 of this embodiment is mounted face down on a motherboard (not shown) by the pins 29. That is, the heat dissipation area faces upward (outward) and the electronic component mounting area faces downward (inward) during mounting. The area of the heat dissipation area, more specifically, the area of the portion of the heat dissipation area exposed from the window 26 is the actual heat dissipation area of the semiconductor package 11.

As shown in FIGS. 3 to 5, electrical connection portions between the LSI chips 18 and 19 side and the buildup multilayer thin film wiring board 12 side, and the buildup multilayer thin film wiring board 12 are connected.
The electrical connection between the side and the base unit 25 side is sealed with a sealing resin 36. In this embodiment, the sealing resin 3
Epoxy resin having viscosity of 1500 cps to 2500 cps as 6 (Kyushu Matsushita, trade name: CCN2001-23P)
Is used. The electrical connection between the LSI chips 18 and 19 side and the buildup multilayer thin film wiring board 12 side is
Specifically, it refers to the bonding pad 20, the bonding pad (not shown) on the upper surface of the LSI chip, and the bonding wire 21 connecting them. The electrical connection portion between the buildup multilayer thin film wiring board 12 side and the base unit 25 side refers to the bonding pad 30, the connection pad 22 and the bonding wire 33 connecting them.

Then, in the blank region R3 of the base unit 25, a substantially square frame-shaped member 37 as a dam for preventing the sealing resin flow is provided with an adhesive seal 35 as an adhesive.
Are glued through. The material for forming the frame-shaped member 37 is
The same material as the main forming material of the printed wiring board 25a, that is, an epoxy resin in this embodiment. The width w of the frame member 37 is smaller than the width of the blank region R3, preferably 0.5 mm to 5.0 mm, particularly preferably 1.0 mm.
It is 3.0 mm. If this width w is too large, the frame-shaped member 3
7 cannot be adhered to the blank area R3. On the other hand, if the width w is too small, the rigidity of the frame-shaped member 37 is reduced and the frame-shaped member 37 is easily deformed. In addition, it becomes difficult to handle when adhering.

Height h of the frame-shaped member 37 in a bonded state
Is at least 0.1 mm or more, preferably 0.15 mm
3 mm, particularly preferably 0.5 mm to 1.0 mm. If the height h is too small, the flow of the sealing resin 36 may not be completely blocked. On the contrary, if the value of the height h is too large, it may be an obstacle during mounting on a motherboard or wire bonding. The value of the height h is preferably set to a smaller value as the viscosity of the sealing resin 36 used is higher, and is set to a larger value as the viscosity is lower.

Next, an example of a procedure for producing the semiconductor package 11 will be introduced. The build-up multilayer thin film wiring board 12 that constitutes the semiconductor package 11 is manufactured as follows. First, one surface of the phosphor bronze plate 13, which is a starting material, is blackened, and a photosensitive epoxy resin is applied on it. Then, by performing exposure and development, an inner diameter of 40μ
A 15 μm thick insulating layer 14 having m holes for forming via holes is formed. A 0.1 μm-thick Cr thin layer is formed on the insulating layer 14 by sputtering, and then a 0.2 μm-thick layer is formed by sputtering.
Form a Cu thin layer of m. L / S = 25 μm / 25 μm
A plating resist for forming the wiring pattern 15 is placed on the Cu thin layer. In this state, electrolytic Cu plating and electrolytic Ni plating are sequentially performed to obtain a 6 μm thick C film.
A u-plated layer and a Ni-plated layer having a thickness of 1 μm are formed respectively. After removing the plating resist, the Cu thin layer and the Cr thin layer in the non-plated portion are etched using a cupric chloride solution and a 20% hydrochloric acid aqueous solution. Then, the insulating layer 14 and the wiring pattern 15 made of a plurality of kinds of metals are alternately formed by repeating the above steps as needed.
As a result, a build-up multilayer thin film wiring board (35 mm square, 1.0 mm thick) 12 having five wiring patterns 15 is manufactured. After this, an open / short test is conducted.

On the other hand, the base unit 25 is manufactured as follows. First, copper clad laminate (50mm square, 1.7mm
A hole for forming a through hole for inserting a pin is formed by drilling the outer peripheral portion of (thickness). After applying the catalyst nuclei and activating the catalyst nuclei, electroless Cu plating is performed to deposit Cu in the through-hole forming holes. Counterbore processing of the central part of the copper clad laminate (35 mm square, depth 1.0
mm), and then counterboring the same part (31 mm square)
By doing so, the window portion 26 having the step portion 27 is formed. Electrolytic C with plating resist in place
Cu is deposited on a necessary portion by performing u plating. After removing the plating resist, unnecessary Cu is etched. Through this etching, the through hole 28,
The connection pad 30 and the wiring pattern 32 are formed. After this, the land 31 of the through hole 28 and the connection pad 3
After forming the solder resist 34 so as to cover the portion other than 0, the pin 29 is inserted into the through hole 28. After this, an open / short test is conducted.

Next, the build-up multilayer thin film wiring board 12 and the base unit 2 which have passed the open / short test.
5 and 5 are temporarily adhered by an adhesive seal (Mitsubishi Yuka, trade name: YEF-040) 35 arranged on the step portion 27 of the copper clad laminate. At that time, the frame member 37 is temporarily adhered to the blank region R3 using the adhesive seal 35 as well. In this example, the pressure for temporary adhesion is 25 kgf / cm ² and the time is 2 minutes. Then, the adhesive seal 35 is completely cured by performing curing at 150 ° C. for 60 minutes. The adhesive seal 35 is preliminarily adhered to the bottom of the frame member 37, and a protective sheet is adhered to the adhesive surface. Therefore, when the frame-shaped member 37 is temporarily bonded,
After peeling off the protective sheet from the adhesive surface, the frame-shaped member 3
The bottom of 7 may be pressed against the blank area R3.

Next, using the die bonder, the tested LSI chip 18 for CPU is mounted on the die pad 17.
6 and memory LSI chips 19 are mounted. Here, a wire bonding device (made by Kyushu Matsushita, trade name: H
W-2200) is used to wire-bond the LSI chips 18 and 19. At this time, wire bonding is also performed between the bonding pad 30 and the connection pad 22 using the same device. In addition, you may implement the bonding process of the base unit 25 and the frame-shaped member 37 mentioned above after a wire bonding process. However, it is better to perform the wire bonding process after the bonding process.
The risk of deformation of 1, 33 is reduced. Of course, after the solder resist 34 is formed, the bonding process may be performed at any time.

Finally, resin encapsulation is performed by the potting method so that the electrical connection between the LSI chips 18 and 19 and the electrical connection between the build-up multilayer thin film wiring board 12 side and the base unit 25 side. , And is individually sealed with the sealing resin 36. The semiconductor package 11 is manufactured through the above procedure.

According to the semiconductor package 11 of this embodiment, the build-up layer B, which is a high-density wiring layer, is formed on one side of the phosphor bronze plate 13 forming the build-up multilayer thin film wiring board 12. . Therefore, even when the semiconductor package 11 is formed together with the base unit 25, a dead area corresponding to the area of the buildup multilayer thin film wiring board 12 does not occur on the surface of the semiconductor package 11. Therefore, the semiconductor package 11
It is possible to secure a sufficient heat dissipation area without making the whole large. In addition, electrical characteristics are improved, such as an increase in signal propagation speed due to avoiding an increase in size. As the heat dissipation of the semiconductor package 11 is improved as described above, malfunctions and thermal destruction of the LSI chips 18 and 19 are extremely reduced as compared with the conventional case.

When the build-up multilayer thin film wiring board 12 is mounted in the accommodating portion of the base unit 25, the heat radiation area on one side of the phosphor bronze plate 13 is largely exposed from the window 26. Therefore, the heat conducted from the electronic component mounting area to the heat radiation area through the buildup layer B and the phosphor bronze plate 13 is efficiently dissipated to the atmosphere through the window 26.

Then, the semiconductor package 11 of the present embodiment.
Then, the frame member 37 as a dam is joined to the blank region R3 between the bonding pad formation region R1 and the input / output terminal formation region R2. Therefore, on the path from the bonding pad formation region R1 to the input / output terminal formation region R2, there is a state in which a convex portion that is an obstacle when the sealing resin 36 flows is formed. Therefore, when the sealing resin 36 supplied by potting tries to spread in the direction of the input / output terminal formation region R2, the frame-shaped member 37 prevents the sealing resin 36 from flowing. As a result, the outline of the sealing resin 36 becomes linear by following the outline of the frame-shaped member 37. Therefore, the appearance of the entire semiconductor package 11 is surely improved as compared with the conventional case in which the outer shape is likely to be indefinite.

Further, as a result of eliminating the non-uniform flow of the sealing resin 36, variations in the electric resistance value are eliminated at the same time,
The electrical characteristics of the semiconductor package 11 are surely improved.
Of course, since the uneven flow of the sealing resin 36 is eliminated, the problem at the time of pin mounting is also eliminated. In addition, the supply position control and supply amount control of the sealing resin 36 are easier than in the conventional case.

Further, in this semiconductor package 11,
Since no measure has been taken to secure the width of the existing blank region R3 to some extent, the external size is not increased. Therefore, the demand for downsizing is not violated.

Further, since the dam is formed by adhering the frame-shaped member 37, it can be carried out extremely easily by existing processes and equipment.
Moreover, since the frame member 37 having a fixed shape is used,
Variations in the width w, height h, and outer shape of the formed dam are extremely small. This surely contributes to improving the appearance of the semiconductor package 11 as a whole.

Further, in this semiconductor package 11,
An epoxy resin is used as the main forming material of the printed wiring board 25a, the forming material of the frame member 37, and the sealing resin 36. Therefore, the thermal expansion coefficients of the three are very similar. Therefore, even when the semiconductor package 11 encounters a thermal shock, peeling does not occur at the interface between them. Therefore, the thermal characteristics of the semiconductor package 11 are surely improved, and the reliability is improved.

The present invention can be modified as follows, for example. (1) Instead of using the substantially square frame-shaped member 37 as in the embodiment, it is possible to form the dam by sticking, for example, four rods. In this case, the dam does not necessarily have to be completely continuous. That is, pin 29
It is also possible to partially omit the dams in the places where the is not erected, the places where the distance to the pin 29 is long, and the like.

(2) Fixed adhesive seal 3 as an adhesive
Instead of the embodiment using No. 8, the frame member 37 may be adhered by using a semi-solid adhesive which is usually used. It is also possible to form the dam by a method other than the method using these adhesives. For example, a method of printing the character printing ink a plurality of times in the blank area R3 may be used. When this method is adopted, ink printing is performed after forming the solder resist 34.

(3) Resin sealing may be performed by the following procedure. First, a mold having a releasing surface is arranged around the blank region R3, that is, in the input / output terminal forming region R2. In this state, the sealing resin 36 is supplied to a predetermined portion, and the sealing resin 36 is thermoset in that state. After this, only the mold is removed from the printed wiring board 25a. According to this method, the mold acts as a dam when the sealing resin 36 is supplied and cured, and the sealing resin 36 to the input / output terminal forming region R2 is formed.
Prevent the flow of.

(4) Instead of the embodiment in which the dam is provided only in the blank region R3, for example, a region outside the blank region R3 may be entirely raised so that the portion functions as a dam.

(5) Even if the frame-shaped member 37 is attached by providing a fixing pin or the like on a part of the bottom surface of the frame-shaped member 37 and inserting the pin into the plated through hole of the base unit 25. Good. Further, a groove is provided in the blank region R3 of the base unit 25, and the frame-shaped member 3 is provided in the groove.
The frame member 37 may be attached by fitting 7 together. Even if the groove is simply provided in the blank region R3 as described above, the flow of the sealing resin 36 is blocked to some extent by the existence of the groove. Therefore, an effect similar to that of the semiconductor package 11 of the above embodiment can be obtained.

(6) The material for forming the sealing resin 36 is not limited to the epoxy resin as in the embodiment, and
Other plastic materials such as BT resin, polyimide resin, silicone resin, fluororesin, etc. may be used. Also, not only these plastic materials,
Metals and ceramics such as copper, aluminum, nickel and kovar can also be used. The main forming material of the printed wiring board 25a forming the base unit 25 may be BT resin or polyimide resin. The sealing resin 3
The forming material of 6 and the main forming material of the printed wiring board 25a do not necessarily have to be the same kind.

(7) The pin 29 of the base unit 25 is not limited to the type inserted into the through hole. For example, the base unit 25 may be of a type that is directly joined to a pad or the like provided on the surface without forming a through hole. Also, instead of the pin 29 as the input / output terminal, a straight wall-shaped bump or the like may be formed.

(8) In addition to individually sealing each electrical connection portion with the sealing resin 36 as in the embodiment, these portions may be entirely sealed. (9) The plate material that constitutes the heat radiator does not necessarily have to be completely plate-shaped, and for example, the surface on the heat dissipation region side may have some irregularities.

(10) In the case of producing a build-up multilayer thin film wiring board which is a radiator, it is needless to say that a metal plate such as an aluminum plate or an alumite plate is used in addition to the phosphor bronze plate used in the examples. It is possible. Further, it is not limited to the metal plate, and it is possible to use a ceramics substrate such as an alumina plate, a mullite plate, a silicon nitride plate, a boron nitride plate or the like.

Here, in addition to the technical ideas described in the claims, the technical ideas grasped by the above-described embodiments and other examples will be listed below together with their effects. (1) A window portion for exposing the heat radiation area of the heat radiator to the outside is provided in a substantially central portion of a printed wiring board having a plate material as a main material, and a plurality of windows are provided on one side surface of the printed wiring board and around the window portion. Of the bonding pad, and a plurality of input / output terminals in a region outside the bonding pad formation region, the base unit including at least the input / output terminal formation region and the bonding pad formation region. A base unit for mounting the radiator, in which a dam for preventing the flow of the sealing resin is formed in the area between the two.

(2) A semiconductor package in which a groove for preventing sealing resin flow is formed instead of the dam for sealing resin flow prevention in the semiconductor package according to claim 1.
With this configuration, the flowing sealing resin falls into the groove, and as a result, further spreading of the sealing resin is prevented.

(3) In the semiconductor package according to claim 2, the frame-shaped member forming material and the sealing resin material are both plastics of the same kind. With this configuration, the thermal characteristics can be further improved.

(4) The semiconductor package according to claim 2, wherein the frame-shaped member forming material, the main forming material of the printed wiring board, and the sealing resin material are all plastics of the same kind. With this configuration, the thermal characteristics can be further improved.

(5) A semiconductor package according to technical ideas (3) and (4), wherein the plastic is an epoxy resin. According to this structure, thermal characteristics and cost performance can be further improved.

The technical terms used in this specification are defined as follows. "High thermal conductivity material: A material having a higher thermal conductivity than a plastic material, for example, a ceramic material such as aluminum nitride, alumina, or mullite, or a metal material such as copper or aluminum."

[0052]

As described in detail above, according to the invention described in claims 1 to 3, since the flow of the sealing resin is blocked by the dam, the sealing resin is prevented from increasing in size. It is possible to reliably avoid the deterioration of the electrical characteristics and the deterioration of the appearance due to the flow of the liquid.

In particular, according to the second aspect of the invention, since the frame-shaped member is used as the dam, it is possible to more reliably prevent the appearance from being deteriorated, and it is possible to form relatively easily. According to the third aspect of the invention, the reliability is further improved by improving the thermal characteristics of the semiconductor package.

[Brief description of drawings]

FIG. 1 is a bottom view showing a base unit according to an embodiment.

FIG. 2 is a plan view showing the base unit shown in FIG.

FIG. 3 is an enlarged sectional view of an essential part showing a semiconductor package.

FIG. 4 is an enlarged plan view of the relevant part.

FIG. 5 is a bottom view of the same.

FIG. 6A is an enlarged plan view of an essential part for explaining the problems of the conventional semiconductor package, and FIG. 6B is an enlarged sectional view of the same part.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 11 ... Semiconductor package, 12 ... Build-up multilayer thin film wiring board as a heat radiator, 13 ... Plate material made of high thermal conductive material, 17 ... Die pad as electronic component mounting portion, 1
8, 19 ... LSI chip as electronic component, 22 ... Connection pad as connection terminal, 25 ... Base unit, 25
a ... Printed wiring board, 26 ... Window portion, 29 ... Pins as input / output terminals, 30 ... Bonding pad, 33 ... Bonding wire, 36 ... Sealing resin, 37 ... Frame member as dam, 38 ... As adhesive Adhesive seal, h ... Height of frame-shaped member, w ... Width of frame-shaped member, B ... High-density wiring layer, R1
... Bonding pad forming area, R2 ... Input / output terminal forming area, R3 ... Blank area.

─────────────────────────────────────────────────── ─── Continued Front Page (58) Fields surveyed (Int.Cl. ⁷ , DB name) H01L 23/28 H01L 23/12 H01L 25/04 H01L 25/18

Claims (3)

(57) [Claims] 1. A plate material made of a high thermal conductive material has one side surface as a heat radiation area and the other side surface as an electronic component mounting area having a high density wiring layer, and an electronic component mounting portion is provided on the high density wiring layer. A heat radiator having a plurality of connection terminals electrically connected to the electronic component side via the high-density wiring layer at an outer edge portion of the electronic component mounting area; and a heat radiation area of the heat radiator outside. A window portion for exposing the printed wiring board is provided substantially at the center of the printed wiring board, and a plurality of bonding pads are arranged on one side of the printed wiring board and around the window portion. A base unit for mounting a heat radiator having a plurality of input / output terminals arranged in a region, and the bonding pad and the connection terminal are electrically connected via a bonding wire. A semiconductor package in which the connecting portion is sealed with resin, and the sealing resin flow prevention is provided in at least a region between the input / output terminal forming region and the bonding pad forming region in the base unit. A semiconductor package with a dam formed in it. 2. The dam is a frame-shaped member having a width that can be arranged in a region between the input / output terminal formation region and the bonding pad formation region, and the frame-shaped member is bonded with an adhesive. The semiconductor package according to claim 1, wherein 3. The frame-shaped member forming material is the same type of plastic as the main forming material of the printed wiring board, and the height of the frame-shaped member in a bonded state is 0.15 mm to 3 mm.
The semiconductor package according to claim 2, wherein