JP3359544B2 - Thin film forming equipment - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus for forming a thin film, and more particularly to an apparatus for forming a thin film having a flat surface by transferring the thin film to a substrate.

[0002]

2. Description of the Related Art A thin film forming method relating to an electronic component mainly includes:
Sputtering, chemical vapor deposition, vapor deposition, coating,
It can be broadly divided into plating methods and the like. When the area of a substrate on which a thin film is to be formed is small, any one of these methods can be used to handle an electronic component to be realized. However, in recent years, semiconductor substrates have
For example, the diameter has been steadily increased from 8 inches to 12 inches, and as the diameter of wafers used in the manufacture of LSIs and the area of liquid crystal panels and the like have increased, thin film forming methods suitable for the increase in diameter have been developed. It has become necessary. Also, in the field of multilayer wiring technology in LSI manufacturing technology, it is necessary to flatten the surface of an insulating film with high precision in order to realize multilayer wiring. The demand for chemical technology is also increasing.

Heretofore, as typical techniques of this flattening method, (1) SOG (Spin-On-Glass) method and PIQ method (K. Sat method)
o, S.Harada, A.Saiki, T.Kitamura, T.Okubo, and K.Muka
i, "A Nove1 Planar MultilevelInterconnection Techno
logy Utilizing Polyimide ", lEEE Trans.Part HybridPa
ckage., "PHP-9,176 (1973)" (2) Etchback method (P. Elikins, K. Reinhardt, and R.
Layer, "A planarization Process for double metal CM
OS using Spin-on Glass as aSacrificial Layer, "Proc
eeding of 3rd lnternational IEEE VMIC Conf., 100 (19
86)) (3) Lift-off method (K. Ehara, T. Morimoto, S. Muramoto,
and S.Matsuo, "Planar lnterconnection Technology fo
r LSI Fabrication Utilizing Lift-off Process ", J. Ele
ctrochem. Soc ", Vol. 131, No. 2, 419 (1984)).

However, with the SOG method, it is difficult to achieve complete flattening because the fluidity of the film is used. The etch-back method is the most widely used technique, but has a problem of dust generation due to simultaneous etching of a resist and an insulating film, and is not an easy technique in terms of dust management. Also, the lift-off method has not been put to practical use because the stencil material used does not completely dissolve at the time of lift-off, so that it cannot be lifted off, and the controllability and yield are insufficient.

On the other hand, as a simple planarization method, C.
A bias sputtering method was proposed by Y. Ting (CY
Ting, VJVivalda and HGSchaefer, "Study of Planar
izedSputter-Deposited-SiO2 ", J.Vac.Sci.Technol.1
5,1105 (1978)). Further, as a method for further applying to fine wiring by using bias application, 1986, K. Machi
da et al. proposed a bias ECR method (K. Machida
andH.0ikawa, "SiO2 Planarization Technology with Bi
asing and ElectronCyclotron Resonance Plasma Depos
ition for SubmicronInterconnections, "J.Vac.Sci.Tec
hnol.B4,818 (1986)). In these methods, film formation is performed by a sputtering method or an ECR plasma CVD method, an rf bias is applied to a substrate, and sputtering occurs on a sample substrate.
Utilizing the angle dependence, a film is formed while etching the convex portion, thereby realizing flattening. The features of these technologies include that the film quality is good even when formed at a low temperature, and that the planarization process is easy and simple. However, there are problems such as low throughput and damage to elements.

In the 1990s, a polishing method was proposed as a method for planarizing the surface of an interlayer film (WJPatrick, W. et al., J. Appl.
L. Guthrie, CLStandley, PMSchiable, "Application o
f Chemical Mechanical Polishing to the Fabrication
of VLSI Circuit Interconnections ", J.E1ectrochem.S
oc., Vol. 138, No. 6, June, 1778 (1991)). Although this polishing method is a technology that has attracted attention because it can obtain good flatness, it is necessary to use a high-quality insulating film at low temperature because good polishing characteristics cannot be obtained if the film quality of the insulating film is poor. And the polishing characteristics are unstable.

[0007]

As described above, when the above-mentioned prior art is applied to a large-diameter semiconductor substrate, it is difficult to ensure the flatness of the surface and the uniformity of the film thickness from the viewpoint of controllability. It is. As a result, a complicated process must be added in order to cope with the increase in the diameter, and there is a problem that the cost is increased. The present invention has been made to solve the above-described conventional problems, the main purpose of which is to transfer a thin film formed on a sheet film to a substrate,
An object of the present invention is to provide a thin film forming apparatus capable of easily forming a thin film having high flatness on a large-diameter substrate at low cost.

[0008]

In order to achieve the above object, a thin film forming apparatus according to the present invention includes a heating mechanism for mounting a substrate on which a thin film is to be formed and heating the substrate at a predetermined temperature. A sample table provided, a transfer plate to which a sheet film having a thin film formed on the substrate formed on the surface thereof is mounted facing the sample table and at least one of the sample table and the transfer plate is moved. A weight mechanism for pressing the sample stage against the transfer plate for a predetermined time in a state where the substrate and the thin film formed on the surface of the sheet film are in contact with each other, and a thin film for disposing the sample stage and the transfer plate inside The thin-film formation chamber includes a formation chamber and an exhaust unit that evacuates the thin-film formation chamber. In the present invention, the thin film is transferred to the substrate surface by pressing the sheet film having the thin film formed on the surface against the substrate surface heated on the sample stage in the evacuated thin film forming chamber. As a result, a thin film having high flatness can be easily formed on the surface of a large-diameter substrate at low cost.

In the present invention, the sample stage and the transfer plate facing each other may be parallel. However, in the thin film forming apparatus according to the present invention, one of the sample stage and the transfer plate is the other. Are arranged so as to be inclined with respect to the plane. In the thin film forming apparatus according to a third aspect of the present invention, the transfer plate is disposed so as to be inclined with respect to the plane of the sample stage. In such an invention, when the sample stage is pressed against the transfer plate by the weighting mechanism, the substrate and the thin film start to contact at a predetermined position, and the contact area is expanded in a predetermined direction. Become. Thereby, when transferring the thin film formed on the surface of the sheet film to the substrate surface, the escape path of the gas generated from the thin film is guided in one direction, and the transfer due to the gas stagnating between the substrate and the sheet film. Prevent defects.

The invention according to claim 7 is a thin film forming apparatus characterized in that the transfer plate is provided with a temperature control mechanism for heating the sheet film. With such a temperature control mechanism, degassing from the thin film formed on the sheet film surface can be promoted, and transfer failure due to bubbles generated as a result of degassing at the time of transferring the thin film can be improved. Further, the invention described in claim 8 is a thin film forming apparatus characterized in that the transfer plate is provided with cooling means for cooling the sheet film. In the present invention, cooling the sheet film after the transfer of the thin film promotes local shrinkage at the interface between the sheet film and the thin film, reduces the adhesion between the sheet film and the thin film, and makes it easier to peel off. it can.

[0011]

Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a diagram showing a configuration of a thin film forming apparatus according to a first embodiment of the present invention. As shown in FIG. 1, a thin film forming apparatus includes a sample stage 102 on which a wafer (substrate) 103 is mounted and a sample stage supporting plate 104 for moving the sample stage 102 in a thin film forming chamber 101 capable of being evacuated. , And a transfer plate 105 that is disposed above and facing the sample table 102. The thin film forming chamber 101 can be evacuated from an exhaust port 101a by an evacuation unit not shown in FIG.

Here, the sample stage 102 includes a heating stage 102a for heating the wafer 103 and a stage 102b made of quartz on which the wafer 103 is mounted. The heating table 102a includes a heater 106 therein as a heating mechanism, and the heater 106 is controlled by a heater control unit 107, and the heating is controlled at 25 to 300 ° C. In addition, quartz is excellent as a material for the stage 102b on which the wafer 103 is mounted because it does not contain a substance that contaminates the wafer 103, has good workability, and easily obtains required flatness.

The sample stage support plate 104 is intended to move the sample stage 102 toward the transfer plate 105 and to uniformly apply a load to the wafer 103 when a thin film is formed. For this reason, the sample stage 102 is connected to the sample stage support plate 104 by a spring 108 so that the pressing pressure becomes uniform when pressed against the transfer plate 105. The sample stage support plate 104 is held by a column 110 for moving the sample stage 102 in parallel.
1 and a weighting motor 109 and a weighting drive unit 109 provided outside.
a. In the present embodiment,
By driving the weight motor 109, the weight can be applied to the sample support plate 104 up to 20 kgw.

On a transfer plate 105 facing the sample table 102, a sheet film (FIG. 1) having a thin film formed on its surface in advance.
(Not shown) is mounted with the thin film facing the sample table 102. Although not shown in FIG. 1, this transfer plate 1
A quartz plate polished to ensure flatness is provided on the surface of the sheet film 05, which is fixed, and the sheet film is fixed to both ends of the quartz plate. A receiving rod 111a is provided at the center of the back surface of the transfer plate 105,
Further, the support rod 112 of the transfer plate 105 includes a receiving rod 111a.
Are arranged symmetrically with respect to the axis. When the opposing sample table 102 is pushed up, the weight received by the transfer plate 105 is detected by the weight sensor 111 via the receiving rod 111a. The result of measuring the weight with the weight sensor 111 is sent to the weight control unit 113. Then, the weight control unit 113 controls the weight motor 109 based on the detection result of the weight sensor 111 so that weight can be applied for a predetermined time while preventing overload or the like.

Next, a sheet film having a thin film formed on the surface will be described. FIG. 2 is a cross-sectional view of the sheet film 10 having a surface on which an insulating film 20 to be a thin film is formed. In the present embodiment, a thermoplastic resin film is used as the sheet film 10, and a coating for forming a silica-based insulating film containing one or more of polysilazane of an SOG material represented by the following Chemical Formula 1 is used as the thin film. The insulating film 20 was formed with a thickness of 1 μm or more by applying a liquid to the sheet film 10. Here, in Chemical Formula 1,
R1, R2 and R3 are each independently a hydrogen atom or an alkyl, aryl or alkoxyl group having 1 to 8 carbon atoms.

[0016]

Embedded image

FIG. 3 is a sectional view of a wafer 103 on which an insulating film is formed using the above-described sheet film 10.
(A). The wafer 103 has a structure in which an Al wiring is formed as the electrode wiring 21 on the semiconductor substrate 9. In this embodiment, the electrode wiring 21 is formed by forming Al to a thickness of 5000 angstroms by sputtering, patterning by photolithography, and then processing by dry etching.

Next, a procedure for forming a thin film using the above-described thin film forming apparatus will be described. In the present embodiment, the wafer 103 shown in FIG. 3A is placed on the heating unit 102b of the sample stage 102 so that the electrode wiring 21 faces upward. Further, the sheet film 10 shown in FIG. 2 is mounted on the transfer plate 105 opposed to the sample table 102 with the insulating film 20 facing the sample table 102.

In this state, the insulating film 20 is transferred to the wafer 1
The operation of the thin film forming apparatus according to the present embodiment at the time of transferring the image data to O3 is as follows. (1) First, the heater 106 is controlled by the heater control unit 107 so as to heat the wafer 103 at a desired temperature (FIG. 3B). (2) Further, the inside of the thin film forming chamber 101 is evacuated by a vacuum evacuation unit not shown in FIG. (3) After reaching a desired degree of vacuum, a signal is sent from the weight control unit 113 to the weight motor 109, and the weight operation is started. As a result, the sample stage 102 moves toward the transfer plate 105 together with the sample stage supporting plate 104, and the wafer 103 and the sheet film 10 abut. (4) When the weight is continued by the weight motor 109 and the desired weight is detected by the weight sensor 111, the weight controller 113 controls the weight motor 107 so that the weight is continued for a certain period of time (FIG. b)). During that time, the wafer 103 is heated to a predetermined temperature. In the practice of the present invention, the degree of vacuum is set to 10 Torr or less, the thin film transfer is weighted at 5 kg, the heating temperature is 150 ° C.,
The heating was performed for 10 minutes. (5) When a series of weighting operations is completed, the weight control unit 113 sends a signal to the weight motor 109 so that the weight state becomes zero. At this time, control is performed so that the evacuation is also stopped. (6) After that, the sheet film 1 with the insulating film 20 interposed therebetween
And the wafer 103 integrated with the thin film forming chamber 10
The wafer 103 on which the insulating film 20 is formed as shown in FIG. 3D is obtained by removing the sheet film 10 as shown in FIG. 3C and peeling the sheet film 10 as shown in FIG.

In the present embodiment, after the sheet film 10 is peeled off, a heat treatment step is further performed to fire the insulating film 20. In this embodiment, the temperature is 400 ° C. and the time is 3
Heat treatment was performed in a steam atmosphere for 0 minutes. As a result, by using the apparatus of the present invention, a thin film having a flat surface as shown in FIG. 3D could be formed. The thickness of the insulating film 20 finally obtained was 1.0 μm.

Next, a second embodiment of the present invention will be described. FIG. 4 is a configuration diagram showing a thin film forming apparatus according to a second embodiment of the present invention. As shown in FIG. 4, a sample stage 202 on which a wafer 203 is mounted and a sample stage 2
A sample table support plate 204 for moving the sample table 02 and a transfer plate 205 facing the sample table 202 are accommodated therein. The thin film forming chamber 201 is evacuated from an exhaust port 201a by an exhaust unit (not shown).

Here, similarly to the first embodiment, the sample stage 202 includes a heating stage 202a and a stage 202b made of quartz on which a wafer 203 is mounted. The heating table 202a includes a heater 206 therein as a heating mechanism. The heater 206 is controlled by a heater control unit 207, and the heating is controlled at 25 to 300 ° C.

The sample stage 202 is connected to the sample stage supporting plate 204 via a spring 208. As a result, the sample stage 202 is moved toward the transfer plate 205, and when a thin film is formed, the weight applied to the wafer 203 becomes uniform when the weight is applied. Sample table support plate 204
Is held by a column 210 for moving the sample stage 202 in parallel. Although not shown, the columns 210 are arranged at four corners of the sample table 202.
Further, the weighted motor 20 provided outside the thin film forming chamber 201
9 is directly connected via a weight drive unit 209a, and by driving the weight motor 209, a weight of 20 kgw
Up to the sample stage support plate 204.

The transfer plate 205 is provided with a sheet film on which a thin film is formed in advance. A surface of the transfer plate 205 to which the sheet film is fixed is provided with a polished quartz plate to ensure flatness. Then, a sheet film is fixed to both ends of the quartz plate.

At the center of the back surface of the transfer plate 205, a receiving rod 211a of a weight sensor 211 is provided, and when the opposing sample stage 202 is pushed up, the load received by the transfer plate 205 is applied to the back surface. Is detected by the weight sensor 211 via the receiving rod 211a. This weight sensor 2
By measuring the weight applied in 11, it is possible to prevent overloading or the like.

The transfer plate 205 is mounted on the sample stage 2
It is not parallel to the 02 plane, but is inclined and held. That is, the support rods 212 of the transfer plate 205 are arranged at symmetric positions with respect to the receiving rod 211a, respectively.
In addition, they are arranged at different distances from the sample stage support plate 204. In this embodiment, the transfer plate 205 is inclined at 20 degrees with respect to the plane of the sample table 202. Note that, in the present embodiment, the support rod 212 is provided on the transfer plate receiving plate 205 a fixed to the thin film formation chamber 201.
It is fixed to. However, the transfer plate 205 may be fixed obliquely, and for example, the support rod 212 may be directly fixed to the wall surface of the thin film forming chamber 201.

As described above, the transfer plate 205 is moved to the sample stage 202.
When the sample stage 202 is raised and pressed against the transfer plate 205, the thin film formed on the wafer 203 and the sheet film (not shown in FIG. 4) is positioned at a predetermined position. And the contact area spreads in a predetermined direction. For example, in FIG. 4, first, the sample stage 202 and the transfer plate 205 come into contact with each other from the left side of the paper surface, and the contact surface spreads rightward as the sample stage 202 rises.

As described above, by inclining the transfer plate 205, with the sheet film disposed on the surface of the transfer plate 205, the wafer 203 on the sample stage 202 is placed on the sheet by raising the sample stage support plate 204. By pressing the film against the film, the direction in which gas generated between the wafer 203 and the sheet film escapes is kept constant, and the gas escape path can be guided in one direction.

In addition, in this embodiment, the transfer plate 205 is provided with a heater 214 and a cooling water passage 216 as a temperature control mechanism. This heater 214
When pressurized by the control of the heater control unit 215, the transfer plate 205
Is heated to heat the sheet film. As a result, degassing from the thin film formed on the sheet film surface can be promoted, and transfer failure due to bubbles generated as a result of degassing during transfer can be improved. The heating temperature of the heater 214 is
It is possible in the range of 25-300 ° C. In addition, cooling water channel 2
The transfer plate 205 can be cooled by passing cooling water through the transfer plate 16. If cooling is performed after transfer by such a cooling mechanism, local shrinkage is promoted at the interface between the sheet film and the thin film, the adhesion between the sheet film and the thin film is reduced, and the film can be more easily peeled. When there is no cooling mechanism, the separation is caused by natural cooling. However, by providing this cooling mechanism, the separation can be intentionally controlled and performed, and the processing time can be shortened.
The temperature of the cooling can be controlled in the range of 10 to 25 ° C.

Next, formation of an insulating film using the thin film forming apparatus according to this embodiment will be described below. First, the sheet film used in the present embodiment, a thin film (insulating film) formed on the sheet film, and the wafer 203
Are the same as those in the first embodiment. That is, also in the present embodiment, a thermoplastic synthetic resin film is used as a sheet film, and as shown in FIG. 2, one or two or more kinds of polysilazane of the SOG material shown in Chemical Formula 1 are formed on the surface of the sheet film 10. A thin film (insulating film 20) having a thickness of 1 μm or more was formed by applying a silica-based insulating film forming coating solution containing The wafer 203 to which the insulating film 20 is to be transferred is, like the wafer 103 described in the first embodiment, the electrode wiring 21 on the semiconductor substrate 9 as shown in FIG.
Is formed.

The wafer 203 is placed on the sample stage 202 as shown in FIG. Further, the sheet film 10 shown in FIG. 2 was mounted on the transfer plate 205 such that the surface on which the insulating film 20 was formed faced the sample table 202. In the present embodiment, the transfer plate 205 is inclined by 20 degrees with respect to the plane of the sample table 202.

Here, the inside of the thin film forming chamber 201 was evacuated to 10 Torr or less, and the sheet film 22 mounted by heating the transfer plate 205 using the heater 214 was heated at 110 ° C. for 5 minutes. As described above, by heating under reduced pressure, degassing from the insulating film 20 formed on the surface of the sheet film 10 is promoted, and the degassing can be effectively performed.

The heater 20 provided on the sample stage 202
6 heats the wafer 203 at a predetermined temperature. Next, by operating the weight motor 209, the sample stage support plate 204 and the sample stage 202 are raised, and the wafer 203
The surface on which the electrode wiring 21 is to be formed is placed on the insulating film 2 of the sheet film 10.
It pressed against the 0 forming surface. At this time, since the transfer plate 205 is arranged obliquely with respect to the sample stage 202, the wafer 2
03 and the thin film formed on the sheet film start to contact at a predetermined position, and the contact area spreads in a predetermined direction. That is, in FIG. 4, first, the sample stage 202 and the transfer plate 205 contact
With the rise of 2, the contact surface spreads rightward,
The entire surface of the wafer 203 is pressed against the insulating film 20 on the sheet film. By inclining the transfer plate 205 in this manner, the direction in which the gas generated between the wafer 203 and the sheet film escapes is kept constant, and the gas escape path can be guided in one direction.

The entire surface of the wafer 203 is covered with the sheet film 10
5 kg weight and pressed against
After maintaining the temperature at 50 ° C. for 10 minutes, the heating by the heater 214 is stopped, and the transfer plate 205 is cooled by flowing cooling water through the cooling water passage 216. In this way, the transfer plate 205 was cooled to about 10 ° C., and the sheet film 10 was cooled, so that the sheet film 10 was peeled off in about three minutes while leaving the insulating film 20 on the wafer 203. as a result,
Insulating film 20 formed on the surface of sheet film 10
Was transferred to the wafer 203.

Next, the sample stage 202 is heated by the heater 206.
Is heated at about 400 ° C. for 30 minutes in an atmosphere of water vapor to bake the transferred insulating film 20. As a result, as shown in FIG. 3B, the insulating film 20 was formed on the surface of the wafer 203 including the electrode wiring 21. Finally, an insulating film 20 having a thickness of 1.0 μm and a flat surface was obtained.

In the present embodiment, the transfer plate 205 is described as being inclined, but it goes without saying that the sample table 202 may be inclined. Further, in the above two embodiments, the weight is applied by using the motor. However, the present invention is not limited to this, and other mechanisms may be used as long as the mechanism can press between the transfer plate and the sample table. Needless to say, there is no problem. In addition, although quartz is used for the stage on which the wafer is mounted, the present invention is not limited to this. From the viewpoint of measures for preventing wafer contamination, other materials may be used as long as they do not contain a substance serving as a contamination source, can be cleaned, and can secure flatness. In the above two embodiments, a sheet film made of a thermoplastic synthetic resin film is used. However, the present invention is not limited to this. Needless to say, a metal film or a flat plate may be used. Also, an insulating film was formed on the sheet film,
The thin film is not limited to the insulating film as long as it can be formed on the sheet film, and another thin film, for example, a metal thin film may be formed. Furthermore, in the above-described embodiment, an example is described in which a thin film is formed on a semiconductor substrate. However, the present invention is not limited to this. Needless to say.

[0037]

According to the present invention, the thin film is transferred onto the substrate surface by pressing a sheet film having a thin film formed on the surface thereof in advance, so that even a large-diameter substrate is used. A thin film having high flatness can be easily formed on the surface at low cost.

According to the second and third aspects of the present invention, one of the sample stage and the transfer plate is disposed so as to be inclined with respect to the other plane. When the sample stage is pressed against the transfer plate, the substrate and the thin film start to come into contact with each other at a predetermined position, and the contact area spreads in a predetermined direction. Thereby, when transferring the thin film formed on the surface of the sheet film to the substrate surface, the escape path of the gas generated from the thin film is guided in one direction, and the transfer due to the gas stagnating between the substrate and the sheet film. Defects can be prevented.

According to the invention, the transfer plate is provided with a temperature control mechanism for heating the sheet film, so that degassing from the thin film formed on the surface of the sheet film is promoted. This makes it possible to improve transfer failure due to bubbles generated as a result of degassing during transfer of the thin film.

Further, according to the invention described in claim 8, the transfer plate is provided with a heating means for heating the sheet film and a cooling means for cooling the sheet film. Is cooled to promote local shrinkage at the interface between the sheet film and the thin film, thereby reducing the adhesiveness between the sheet film and the thin film and allowing the film to be more easily peeled off.

[Brief description of the drawings]

FIG. 1 is a diagram showing a configuration of a thin film forming apparatus according to a first embodiment of the present invention.

FIG. 2 is a cross-sectional view of a sheet film on which an insulating film is formed.

FIG. 3 is a view showing a step of transferring an insulating film to a semiconductor substrate.

FIG. 4 is a diagram illustrating a configuration of a thin film forming apparatus according to a second embodiment of the present invention.

[Explanation of symbols]

Reference numeral 9: semiconductor substrate, 10: sheet film, 20: insulating film, 21: electrode wiring, 101, 201: thin film forming chamber, 1
01a, 201a ... exhaust port, 102, 202 ... sample table,
102a, 202a: heating table, 102b, 202b: stage, 103, 203: wafer, 104, 204: sample table support plate, 105, 205: transfer plate, 106, 206
... heaters, 107, 207 ... heater control units, 108, 2
08: spring, 109, 209: load motor, 110, 2
10 ... pillar, 111, 211 ... weight sensor, 111a,
211a ... receiving rod, 112, 212 ... support rod, 113,
203: weight control unit, 214: heater, 215: heater control unit, 216: cooling water channel.

──────────────────────────────────────────────────続 き Continuing on the front page (72) Kazuo Imai Inventor, Nippon Telegraph and Telephone Corporation 3-9-1, Nishishinjuku, Shinjuku-ku, Tokyo (56) References JP-A-60-182138 (JP, A) 63-270188 (JP, A) JP-A-8-17812 (JP, A) (58) Fields investigated (Int. Cl. ⁷ , DB name) H01L 21/31 H01L 21/316

Claims (9)

(57) [Claims] 1. A sample stage on which a substrate on which a thin film is to be formed is mounted and provided with a heating mechanism for heating the substrate at a predetermined temperature; and a thin film formed on the substrate and opposed to the sample stage. A transfer plate on which a sheet film formed on the surface is mounted, and at least one of the sample stage or the transfer plate is moved, and the substrate and the thin film formed on the sheet film surface are in contact with each other, and A weighting mechanism for pressing a sample stage against the transfer plate for a predetermined time; a thin film forming chamber in which the sample stage and the transfer plate are disposed; and an exhaust unit for evacuating the thin film formation room. Thin film forming equipment. 2. The thin film forming apparatus according to claim 1, wherein one of the sample stage and the transfer plate is arranged to be inclined with respect to the other plane, and the sample stage is moved by the weighting mechanism. The thin film forming apparatus according to claim 1, wherein when pressed against a transfer plate, the substrate and the thin film start to contact at a predetermined position, and the contact area spreads in a predetermined direction. 3. The thin film forming apparatus according to claim 1, wherein the transfer plate is disposed to be inclined with respect to a plane of the sample table, and the sample table is pressed against the transfer plate by the weighting mechanism. Sometimes, the substrate and the thin film start to contact at a predetermined position, and the contact area spreads in a predetermined direction. 4. The thin film forming apparatus according to claim 1, wherein said heating mechanism provided on said sample stage heats said substrate mounted on said sample stage. And a heating control means for controlling a heating output of the heating means. 5. The thin film forming apparatus according to claim 1, wherein the weighting mechanism includes a weighting unit that presses the sample table against the transfer plate, and a weighting pressure of the weighting unit. A thin film forming apparatus comprising: a weight detection unit that performs weighting; and a weight control unit that presses the sample stage against the transfer plate for a predetermined time based on a signal from the weight detection unit. 6. The thin film forming apparatus according to claim 5, wherein an output of the heating unit is controlled to a predetermined temperature, and the exhaust unit is operated so that the inside of the thin film forming chamber has a predetermined degree of vacuum. The weighting means is controlled so that the sample table is pressed against the transfer plate at a predetermined pressure based on a signal from the weight detection means, and the weighting means is controlled so that a weighted state becomes zero after a predetermined time has elapsed. A thin film forming apparatus, comprising: a control mechanism for controlling and controlling an exhaust unit so that exhaust is stopped. 7. The thin film forming apparatus according to claim 1, wherein the transfer plate includes a temperature control mechanism for heating the sheet film. 8. The thin film forming apparatus according to claim 7, wherein said temperature control mechanism comprises a heating unit for heating said sheet film and a cooling unit for cooling said sheet film. apparatus. 9. The thin film forming apparatus according to claim 1, wherein a portion of said sample stage on which said substrate is mounted is made of quartz. apparatus.