JPH10247643A - Device and method for thin-film formation - Google Patents

Abstract

PROBLEM TO BE SOLVED: To form a thin film inexpensively for the substrate of a large aperture and to solve the transfer failure of the thin film due to the deflection of a sheet film and hence secure the flatness and uniformity in a film thickness. SOLUTION: For example, a sample stand 3, a transfer plate 4, a sample stand support plate 5, a sheet film support mechanism 6 are arranged in a thin-film formation room 2. A sheet film 10 is supported in a state where a tension is given by the sheet film support mechanism 6. The sample stand support plate 5 is raised and is pressed against the lower surface of the transfer plate 4. Further, it is raised and a wafer 8 on the sample stand 3 is pressed against the sheet film 10, thus transferring a thin film formed on the surface of the sheet film 10 to the surface of the wafer 8.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] 1. Field of the Invention [0002] The present invention relates to a thin film forming apparatus and a thin film forming method for transferring a thin film to a substrate in a semiconductor manufacturing apparatus.

[0002]

2. Description of the Related Art A thin film forming method relating to an electronic component mainly includes:
Sputtering, chemical vapor deposition, vapor deposition, coating,
It is roughly divided into plating method and the like. When the area of a substrate on which a thin film is to be formed is small, any one of these methods can be used to handle an electronic component to be realized. However, as the diameter of a wafer used in the manufacture of LSIs increases and the area of a liquid crystal panel or the like increases, a thin film forming method suitable for the increase in diameter has become necessary. In addition, demands for not only an increase in diameter but also a technique for flattening a surface in forming a thin film are increasing. In particular, taking the field of LSI multilayer wiring technology as an example, in order to realize this multilayer wiring, it is necessary to completely flatten the surface of the insulating film.

Heretofore, as typical techniques of this flattening method, (1) SOG (Spin-On-Glass) method and PIQ method (K. Sat method)
o, S.Harada, A.Saiki, T.Kitamura, T.Okubo, and K.Muka
i, "A Nove1 Planar MultilevelInterconnection Techno
logy Utilizing Polyimide ", lEEE Trans.Part HybridPa
ckage., "PHP-9,176 (1973)" (2) Etchback method (P. Elikins, K. Reinhardt, and R.
Layer, "A planarization Process for double metal CM
OS using Spin-on Glass asaSacrificial Layer, "Proce
eding of 3rd lnternational IEEE VMIC Conf., 100 (198
6)) (3) Lift-off method (K. Ehara, T. Morimoto, S. Muramoto,
and S.Matsuo, "Planar lnterconnection Technology fo
r LSI Fabrication Utilizing Lift-off Process ", J. Ele
ctrochem. Soc ", Vol. 131, No. 2, 419 (1984)) and the like.

[0004] With respect to the SOG method, it is difficult to achieve complete flattening because the fluidity of the film is used.

The etch-back method is the most widely used technique, but has a problem of dust generation due to simultaneous etching of a resist and an insulating film, and is not an easy technique in terms of dust management.

The lift-off method has not been put to practical use because the stencil material to be used is not completely melted at the time of lift-off, so that it cannot be lifted off, and the controllability and yield are insufficient.

As a simple planarization method, CYTing in 1978
A bias sputtering method has been proposed (CYTing,
VJVivalda and HGSchaefer, "Study of PlanarizedS
putter-Deposited-SiO ₂ ", J.Vac.Sci.Technol.15,110
5 (1978)).

Further, as a method for applying to a fine wiring by using a bias application, see K. A bias ECR method was proposed by Machida et al. (K. Machida and
H.0ikawa, "SiO ₂ Planarization Technology with Biasi
ng and Electron Cyclotron Resonance Plasma Depositi
on for SubmicronInterconnections, "J.Vac.Sci.Techno
l.B4,818 (1986)).

In these methods, a film is formed by sputtering or EC.
This is performed by an R plasma CVD method, an rf bias is applied to the substrate, sputtering occurs on the sample substrate, and a film is formed while etching the convex portion by utilizing the angle dependency, thereby realizing planarization. The features of these technologies include that the film quality is good even when formed at a low temperature, and that the planarization process is easy and simple. However, there are problems such as low throughput and damage to elements.

In the 1990s, a polishing method was proposed as a method for planarizing the surface of an interlayer film (WJPatrick, WLGu).
thrie, CLStandley, PMSchiable, "Application ofChe
mical Mechanical Polishing to the Fabrication of V
LSI Circuit Interconnections ", J.E1ectrochem.Soc., V
ol. 138, No. 6, June, 1778 (1991)). This polishing method is a technology that has attracted attention because good flatness can be obtained,
If the quality of the insulating film is poor, good polishing characteristics cannot be obtained. Therefore, there is a problem that a high-quality insulating film is required at a low temperature and polishing characteristics are unstable.

In recent years, the diameter of semiconductor substrates has been increasing from 8 inches to 12 inches, for example.
When the above-described conventional technology is applied to a large-diameter semiconductor substrate, it is difficult to secure flatness and uniformity of film thickness from the viewpoint of controllability. As a result, the present situation is that the cost is increased, for example, by adding a complicated process in order to cope with an increase in diameter. Therefore, there is a demand for the development of a technology for forming a thin film at a low cost corresponding to an increase in diameter and for easily planarizing the thin film.

[0012]

As described above, when the prior art is applied to a large-diameter semiconductor substrate, it is difficult to ensure flatness and uniformity of film thickness from the viewpoint of controllability. There is a problem that adding a complicated process to cope with an increase in the diameter increases the cost.

The present invention has been made to solve the above-mentioned conventional problems, and an object of the present invention is to form a thin film on a large-diameter substrate at low cost.
Another object of the present invention is to provide a thin-film forming apparatus and a thin-film forming method capable of solving transfer failure of a thin film due to deflection of a sheet film and securing flatness and uniformity of the film thickness.

[0014]

SUMMARY OF THE INVENTION In order to solve the above-mentioned object, the present invention provides a sample stage having a heating means, and a sample stage having a thin film formed thereon. A transfer plate for transferring the thin film to a substrate placed thereon; and a sheet film support mechanism for supporting the sheet film in a state where tension is applied to the sheet film. Further, the invention is characterized in that, in the above invention, the sheet film support mechanism includes a rotating shaft for supporting the sheet film, and a tension mechanism. Further, the invention is characterized in that, in the above invention, at least one of the sample stage and the transfer plate is movable in a direction approaching and separating from the sheet film. Further, the present invention provides
There is a thin film forming method of transferring a thin film formed on a sheet film to a substrate by a transfer plate, wherein the transfer plate is brought into contact with the back surface of the sheet film, and then the substrate is pressure-bonded to the surface of the sheet film. The method is characterized in that a thin film is transferred to the substrate.

In the present invention, tension is applied to the sheet film by the sheet film supporting mechanism, and the sheet film is pressed against the substrate by the transfer plate. Therefore, the thin film can be reliably transferred to the substrate. Further, since the thin film to be transferred is formed on the sheet film, the transfer to a large-diameter substrate is enabled.

[0016]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in detail based on an embodiment shown in the drawings. FIG. 1 is a schematic configuration diagram showing one embodiment of a thin film forming apparatus according to the present invention.
Shows a state in which the sheet film is mounted, (b) shows a state in which the transfer plate is brought into contact with the sheet film, and (c) shows a state in which the substrate is pressed onto the sheet film to transfer the thin film. In FIG. 1, a thin film forming apparatus 1 includes a thin film forming chamber 2 and a sample stage 3, a transfer plate 4, a sample stage supporting plate 5, a sheet film supporting mechanism 6, and the like disposed inside the thin film forming room 2. ing.

The pressure in the thin film forming chamber 2 is reduced by a vacuum pump (not shown). The sample table 3 is provided with a heating means 8 such as a heater for heating a wafer 9 as a substrate mounted on the upper surface, and is set on the sample table support table 5.
The heating temperature by the heating means 8 can be controlled from 25 ° C. to 300 ° C. The sample stage support 5 is provided so as to be able to move up and down, and is configured to be raised when transferring a thin film. The transfer plate 4 is disposed above the sample table 3 so as to face each other with the sheet film 10 interposed therebetween.

The sheet film 10 is provided on the wafer 9
A thin film is formed on the surface opposite to the above, and both ends are supported by the rotating shaft 11 of the sheet film support mechanism 6, and are maintained in tension by applying a predetermined tension by the tension mechanism 12. As the tension mechanism 12, for example, a weight is used, and this is used for the sheet film 10.
Hanging on both ends. As described above, when tension is applied to the sheet film 10 by the sheet film support mechanism 6 including the rotating shaft 11 and the tension mechanism 12, the sheet film 10 is prevented from bending when heated and pressed by the transfer plate 4. be able to. The sheet film support mechanism 6 is provided on the sample stage support plate 5 and moves up and down integrally with the sample stage 3. Reference numeral 13 denotes a column for supporting the sample stage supporting plate 5 so as to be vertically movable.

In the thin film forming apparatus 1 having such a configuration, in order to transfer the thin film formed on the sheet film 10 to the wafer 9, first, the wafer 9 is placed on the sample stage 3, and the sheet film 10 Is disposed with the surface on which the thin film is formed facing down, and the film support mechanism 6
Then, the inside of the thin film forming chamber 2 is evacuated to reduce the pressure and the heating means 8 is heated. next,
As shown in FIG. 1B, the sample table support plate 5 is raised to bring the back surface of the sheet film 10 into contact with the transfer plate 4, and the sheet film 10 is uniformly stretched. When the upper surface of the wafer 9 is pressed against the surface of the sheet film 10 as shown in FIG. 1C, the thin film formed on the sheet film 10 is transferred to the surface of the wafer 9. You. Therefore, transfer failure due to bending does not occur, the size of the sheet film 10 can be arbitrarily changed, and thin film transfer to the large-diameter wafer 9 is possible.

In the present embodiment, a weight of 300 g on one side is hung as the weight hung on the sheet film 10. Further, in the present embodiment, a weight is used, but it goes without saying that any means may be used as long as the mechanism applies tension instead of the weight.

FIGS. 2A, 2B and 2C are diagrams showing another embodiment of the present invention. In this embodiment, the transfer plate 4 is disposed above and below the sample table 3 and the sheet film support mechanism 6 so as to be vertically movable, and the transfer plate 4 is lowered to press the sheet film 10 against the upper surface of the wafer 9. ing. Even in such a configuration, it is possible to eliminate the bending of the sheet film 10 as in the above-described embodiment.

FIGS. 3A, 3B and 3C show still another embodiment of the present invention. In this embodiment, the sample stage 3 and the transfer plate 4 are vertically movably arranged,
The transfer plate 4 is lowered to press the sheet film 10, and the sample table 3 is raised to press the wafer 9 against the sheet film 10. In such a configuration in which both the transfer plate 4 and the wafer 9 are moved, the same effects as in the above-described embodiment can be obtained. In this case, the operation for applying tension to the sheet film 10 and the operation for weighting can be performed separately, which is advantageous from the viewpoint of controllability.

[0023]

EXAMPLE Next, an insulating film was formed on a semiconductor substrate using the above-described thin film forming apparatus. FIG. 4 is a sectional view of the sheet film. In the present embodiment, a thermoplastic resin film is used as the sheet film 10, and a coating liquid for forming a silica-based insulating film containing one or more polysilazane of SOG material represented by the following Chemical Formula 1 is used as the thin film. Was applied on the sheet film 10 to form an insulating film 20.

[0024]

Embedded image

Here, in the above Chemical Formula ₁ , R ₁ , R
₂ and R ₃ are each independently a hydrogen atom or a carbon atom 1
To 8 alkyl groups, aryl groups and alkoxyl groups. In this embodiment, the insulating film 20 is formed with a thickness of 1 μm or more.

The transfer of the insulating film 20 to the semiconductor substrate 9 on which the electrode wiring 21 shown in FIG. 5A is formed using the sheet film 10 on which the insulating film 20 shown in FIG. This was performed using The structure shown in FIG. 5A uses an Al wiring as the electrode wiring 21 in this embodiment. The electrode wiring 21 of Al is made of 500
After being formed to a thickness of 0 Å, patterning was performed by a photolithography process, and then processing was performed by dry etching.

FIG. 5B shows a method of transferring an insulating film to a substrate by the present apparatus and method. After the semiconductor substrate 9 was set on the sample stage 3 shown in FIG. 1, the thin film forming apparatus was evacuated. The degree of vacuum was set to 10 Torr or less. In the practice of the present invention, the thin film transfer was performed with a weight of 5 kg, a heating temperature of 150 ° C., and a heating time of 10 minutes.

FIG. 5C shows that the insulating film 20 is formed on the semiconductor substrate 9.
FIG. 5D is a cross-sectional view of the semiconductor substrate showing a structure in which the surface is formed flat after the sheet film 10 is peeled off. A heat treatment step was performed to perform firing after peeling. In this embodiment, the heat treatment was performed at a temperature of 400 ° C. for a time period of 30 minutes in a steam atmosphere. The thickness of the insulating film 20 finally obtained was 1.0 μm. As shown in FIG. 5D, a structure having a flat surface was realized by using the apparatus of the present invention.

In the present invention, an example in which the present invention is applied to a semiconductor substrate has been described. However, the present invention is not limited to this, and the present invention can also be applied to a mounting-related substrate or a liquid crystal-related substrate as long as it is related to electronic component materials.

[0030]

As described above, according to the thin film forming apparatus and the thin film forming method of the present invention, since the sheet film does not bend, the transfer failure due to the bending can be solved, and the thin film can be stably and easily formed. It is possible to provide an apparatus that can realize a flattening process and can easily realize a technology that can cope with a large-area substrate at low cost.

[Brief description of the drawings]

FIG. 1 is a schematic configuration diagram showing one embodiment of a thin film forming apparatus according to the present invention, wherein (a) shows a state in which a sheet film is mounted, (b) shows a state in which the sheet film is brought into contact with a transfer plate, c) shows a state in which the substrate is pressed against the sheet film to transfer the thin film.

2A and 2B show another embodiment of the present invention, wherein FIG. 2A shows a state in which a sheet film is mounted, FIG. 2B shows a state in which a transfer plate is brought into contact with the sheet film, and FIG. It is a figure showing the state where it pressed.

FIG. 3 shows still another embodiment of the present invention,
(A) is a diagram showing a state in which a sheet film is mounted, (b) is a diagram showing a state in which a transfer plate is in contact with the sheet film, and (c) is a diagram showing a state in which a substrate is pressed against the sheet film.

FIG. 4 is a sectional view of a sheet film on which an insulating film is formed.

FIGS. 5A to 5D are views showing a step of transferring an insulating film to a semiconductor substrate.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Thin film formation apparatus, 2 ... Thin film formation chamber, 3 ... Sample stand, 4 ...
Transfer plate, 5: sample stage support plate, 6: sheet film support mechanism, 8: heating means, 9: wafer, 10: sheet film, 11: rotating shaft, 12: tension mechanism, 20: insulating film.

Claims (4)

[Claims] A sample table having a heating means, a transfer plate for transferring the thin film to a substrate placed on the sample table and opposed to the sample table with a sheet film on which the thin film is formed; A thin film forming apparatus comprising: a sheet film supporting mechanism for supporting a sheet film while applying tension to the sheet film. 2. The thin film forming apparatus according to claim 1, wherein the sheet film supporting mechanism includes a rotating shaft for supporting the sheet film and a tension mechanism. 3. The thin-film forming apparatus according to claim 1, wherein at least one of the sample stage and the transfer plate is movable in a direction approaching and separating from the sheet film. 4. A thin film forming method for transferring a thin film formed on a sheet film to a substrate by a transfer plate, wherein the transfer plate is brought into contact with the back surface of the sheet film, and then the substrate is brought into contact with the surface of the sheet film. Transferring the thin film to the substrate by pressure bonding.