JP3355139B2 - Method for manufacturing semiconductor device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor device in which a semiconductor chip and a semiconductor chip substrate are opposed to each other, predetermined portions of both are connected by leads, and a resin is injected between the two. .

[0002]

2. Description of the Related Art As one type of a resin-encapsulated semiconductor device,
For example, there is one disclosed in JP-A-9-260533. FIG. 5A is a cross-sectional view of the semiconductor device 10 taken along the thickness direction.

[0003] The semiconductor device 10 disclosed in this publication is
The semiconductor chip substrate 11, the semiconductor chip 13 facing the semiconductor chip 13, and the lead 1 connecting the wiring pattern 15 b of the substrate 11 and the connection portion 13 a of the chip 13 to each other
5a and a resin 17 covering the gap between the substrate 11 and the chip 13 and the leads 15a. However, the lead 15a is formed by a part of the metal foil 15, and the remaining part of the metal foil 15 is
5b. The wiring pattern 15b is adhered to the semiconductor chip substrate 11 on the surface opposite to the chip mounting surface of the substrate 11.

In the semiconductor device 10, a gap between the semiconductor chip substrate 11 and the semiconductor chip 13 is sealed with an elastomer resin 17a. This is to reduce distortion generated in the semiconductor device due to a temperature change. further,
The lead 15a is sealed with a second resin 17b except for a portion 15b connected to the semiconductor chip substrate 11. In FIG. 5A, reference numeral 19 denotes an external connection unit used for connection with the outside.

FIG. 5B is a cross-sectional view showing another resin-sealed semiconductor device 20 inferred from the semiconductor device 10 described above. In this case, the semiconductor chip substrate 21 is provided on the support 21a and the first surface of the support, is made of a metal foil, and the portion serving as the lead 21b is continuous (in the sectional view, the continuous portion is (Not visible) and a wiring pattern 21c. Further, the semiconductor chip substrate 21 has an external connection portion 21d. One end of the external connection portion 21d is connected to the wiring pattern 21c through the through hole 21e of the support 21a, and the other end is used for connection to the outside. In this semiconductor device 20, the semiconductor chip substrate 21
And the circuit formation surface of the semiconductor chip 13 are opposed to each other. One end of the lead 21b is connected to the connection portion 13a of the semiconductor chip 13. Further, a gap between the semiconductor chip substrate 21 and the semiconductor chip 13 and a portion 21ba of the lead 21b connected to the wiring pattern 21c are formed by the elastomer resin 17a.
Sealed with. Furthermore, the remaining portion 21bb of 21b
Is sealed with a second resin 17b.

[0006] Each of the above structures has attracted attention as one of preferred structures for reducing the thickness, size, and weight of a semiconductor device.

[0007]

However, in the conventional semiconductor device 10 or 20 described above, in each case, the portion (15) of the lead connected to the wiring pattern is required.
b or 21ba) and the rest (15a or 21ba)
bb) are placed under different conditions. That is, FIG.
In the example of (A), the connection portion 15b is in an unsealed state, and the remaining portion 15a is in a resin-sealed state. In the example shown in FIG. 5B, the connection portion 21ba and the remaining portion 21bb are sealed with different resins.

In the field of semiconductor devices, a test (so-called heat cycle test) in which the semiconductor device is exposed to a plurality of different temperatures (normal temperature, low temperature, high temperature, etc.) is performed as part of a reliability test.

When such a heat cycle test is performed on the above-described conventional semiconductor device, the lead (15 or 21)
There is a problem that b) is easily disconnected. This is because, for example, in the example of FIG. 5B, the portion 21ba of the lead 21b connected to the wiring pattern 21c and the remaining portion 21bb are sealed with different resins 17a and 17b. The stress caused by the difference in the coefficient of thermal expansion between each of the resins 17a and 17b reaches the lead 21b during the heat cycle test, and the lead 21b is pulled or compressed, resulting in fatigue. Conceivable.

Therefore, there is a need for a manufacturing method which facilitates the manufacture of a semiconductor device having a structure capable of solving this problem.

[0011]

[0012]

[0013]

[0014]

[0015]

According to the invention of a method for manufacturing a semiconductor device of the present application, a substrate for a semiconductor chip and a metal foil provided on the first surface of the substrate are provided. In this case, a substrate having a connection portion on the semiconductor chip side and a wiring pattern including a predecessor portion of a lead to be connected is prepared. Then, resin sealing is performed in a step including the following steps.

That is, a step of applying a resin to a predetermined region of a surface of one of the prepared semiconductor chip substrate and the semiconductor chip opposite to the other, and after the resin application is completed, A step of causing the chips to face each other at a first interval such that the resin does not spread to the chip-side connection section; and a step of connecting the front part of the lead of the semiconductor chip substrate facing the chip to the connection section on the semiconductor chip side. Forming a lead by connecting the chip and the chip-side connection portion to form a lead, and by setting the distance between the substrate and the chip after the connection, the resin forms the lead on the wiring pattern. And a step of pressing and expanding so as to cover the portion connected to the chip-side connection portion.

The predetermined area to which the resin is applied is an area where the resin does not adhere to the chip-side connection portion. Typically, it is a certain area including the center of the application surface.

According to the invention of this manufacturing method, after supplying the resin between the semiconductor chip substrate and the semiconductor chip,
The lead is connected to the connection part on the chip side. Thereafter, the distance between the semiconductor chip substrate and the semiconductor chip is reduced to a predetermined distance, so that the entire lead is filled with resin. Therefore, the gap between the semiconductor chip substrate and the semiconductor chip and the entire lead can be easily sealed with the same resin.

Each invention of this application can be applied to various semiconductor devices in which a semiconductor chip substrate and a semiconductor chip are connected by leads and at least the leads are sealed with resin. . Preferably, the present invention is applied to a semiconductor device having an external connection terminal of a BGA (ball grid array), and more preferably a semiconductor device of an FBGA (fine pitch ball grid array). These are required to be miniaturized, and therefore, the significance of applying the invention of the present application is great.

[0020]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the invention of a method for manufacturing a semiconductor device of the present application will be described with reference to the drawings. However, the drawings used in the description merely schematically show the dimensions, shapes, arrangement relations, and the like of the components so that the present invention can be understood. In the following drawings, similar components are denoted by the same reference numerals, and overlapping description may be omitted.

First, a semiconductor device 30 obtained by the present invention will be briefly described for reference. FIG. 1 is a cross-sectional view of the semiconductor device 30 cut along the thickness direction.

This semiconductor device 30 has a wiring pattern 31
b, a semiconductor chip 33 disposed opposite to the substrate 31, a lead 31 connecting a wiring pattern 31b and a connection portion 33a on the chip side.
c and a sealing resin 35.

The semiconductor chip substrate 31 includes a support 31a.
The portion of the support 31a, which is provided on the first surface on the chip 33 side, is made of metal foil, and is used as the lead 31c is continuous (integrated (the continuous portion is not visible in the cross-sectional view)). Wiring pattern 31b. Further, the semiconductor chip substrate 31 has an external connection portion 31d used for connection with the outside on the second surface. This external connection 3
1d is a through hole 31 having one end provided on the support 31a.
e, and the other end is used for connection to the outside (for example, a motherboard).

The support 31a can be made of, for example, a film of glass epoxy, ceramics, or a polymer material, for example, a polyimide film. Preferably, a polymer film, more preferably, a polyimide film is used. This is because such a film can form a multiple-type semiconductor chip substrate suitable for mass production of semiconductor devices. That is, a multiple type substrate in which a large number of semiconductor chip substrates 31 are connected to a tape body as a support member by a bridge (for example, FIG.
) Can be configured.

The wiring pattern 31b and the leads 31c connected thereto can be formed of, for example, copper foil. That is,
The copper foil patterned into the shape of the wiring pattern 31b and the lead 31c is provided (adhered) to the support 31a, so that the wiring pattern 31b and the lead 31 are formed.
c can be configured.

The planar pattern shape (not shown) of the wiring pattern 31b is a pattern according to the design of the semiconductor device 30.

The lead 31c has a portion 31ca continuous (connected) to the wiring pattern 31b, a portion 31cb connected to the chip side connection portion 33a, and an intermediate portion (intermediate portion of the lead) 31cc. Consisting of

The external connection portion 31d can have any suitable structure. The external connection portion 31d of this embodiment is a ball grid array made of solder balls.

The semiconductor chip 33 is mounted on the substrate 31
A chip-side connection portion 33a is provided at an end of a surface (circuit formation surface) opposed to. As described above, a part 33cb of the lead 31c is connected to the chip-side connection part 33a.

The resin 35 has at least a portion covering the entire lead 31c as the same resin. Accordingly, the leads 31c are connected to the portions 31ca, 3ca, 3c connected to the wiring pattern 31b and the chip side connection portion 33a.
1cb and the same resin can be covered.

The resin 35 can be any resin according to the design. This resin preferably has the same or similar thermal expansion coefficient as that of the lead 31c. Further, those having high elasticity are preferable.

Preferably, the substrate 31 and the chip 33
Is preferably sealed with the resin 35. This is the case in this embodiment. Therefore, in this example,
The gap between the semiconductor chip substrate 31 and the semiconductor chip 33 and the entire lead 31c are sealed with the same resin 35.

According to the semiconductor device 30 of this embodiment, a resin-sealed semiconductor device in which at least the entire lead 31c is sealed with the same resin is realized. For this reason, in the conventional semiconductor device, it is possible to prevent a problem of disconnection of the lead caused by placing the part of the lead connected to the wiring pattern and the remaining part in different states.

Next, an embodiment of the invention of a method of manufacturing a semiconductor device will be described. This will be described with reference to FIGS.

Here, an example in which the semiconductor device 30 is manufactured using a multiple semiconductor chip substrate will be described.

FIG. 2A is a cross-sectional view (a cutaway view) showing an example of this multiple semiconductor chip substrate, and FIG. 2B is a plan view thereof. Note that FIG. 2A corresponds to a cross section along line II in FIG. 2B.

In the example shown in FIG. 2, a large number of the substrates 31 in the above-described semiconductor chip substrate 31 before the external connection portion 31d is formed are bridged 43 (here, the predecessor portion of the lead 31c). The semiconductor chip substrate 45 is a multiple-type semiconductor chip substrate that is connected to the support member 41 by means of the same.

Of course, the example shown in FIG. 2 is merely an example for understanding the present invention. The structure of the actual multiple semiconductor chip substrate is shown in a considerably simplified manner.

FIGS. 3 and 4 are process diagrams for manufacturing the semiconductor device 30 of the present invention using the multiple semiconductor chip substrate 45 described above.

First, the multiple substrate 45 described above is used as a substrate for a semiconductor chip. Bridge 4 of this substrate 45
Reference numeral 3 denotes a part of a metal foil (for example, a copper foil) formed integrally with the wiring pattern 31b. Of course, this bridge 4
A part of 3 will later become a lead 31c. Therefore, in the case of this embodiment, the bridge 43 is connected to the lead 31c.
It is the predecessor part of.

Next, the substrate 31 side or the semiconductor chip 33
Apply sealing resin to one of the sides. Of course, both may be applied. In this embodiment, FIG.
As shown in (A), a sealing resin 35 is applied to the surface of one of the substrates 45, on which the wiring pattern 31b is provided, of the semiconductor chip substrate 31. This is because the application of the resin is easier than the application on the chip side.

The resin 35 is preferably applied near the center of the above-mentioned surface. In this case, the chip-side connection portion 33
It is easy to prevent the resin from adhering to the chip connecting portion 33a before connecting the lead 31c to a. In addition, this resin 35
When the distance between the substrate 31 and the chip 33 is reduced later, the resin is
The amount is set such that the entire 1c can be filled. Further, as the resin 35, it is preferable to use a resin having a viscosity such that the resin does not flow until the interval is reduced. Further resin 3
For 5, it is preferable to use a resin having elasticity even after curing. This is because, if the resin has elasticity, for example, even if a stress due to a temperature change occurs in the semiconductor device, advantages such as easy relaxation can be obtained.

After the application of the resin 35 is completed, this time, FIG.
As shown in (B), one of the substrates 45 for the semiconductor chip and the semiconductor chip 33 in the substrate 45 are combined so that the surface on which the resin 35 is applied faces the circuit forming surface of the semiconductor chip 33, and The resin 35 is opposed to the chip-side connection portion 33a at a first interval Δy that does not spread. Each of the substrate 45 and the chip 33 is held by a predetermined device (not shown).

Next, as shown in FIG. 3C, the middle of the bridge 43 is cut by the cutting device 51.

After this cutting is completed, this time, FIG.
As shown in (1), the portion 31c remaining on the wiring pattern 31b side of the bridge 43 is bent using the lead bending device 53 so as to be in contact with the connection portion 33a on the semiconductor chip side. Needless to say, the tip of the portion 31c is connected to the connection portion 3 by a suitable connection method, for example, but not limited to, a thermocompression bonding method.
3a.

After the connection is completed, the distance between the substrate 31 and the chip 33 is reduced as shown in FIG. That is, the resin 35 between them connects the lead 31c to the wiring pattern and the portion 31 connected to the chip-side connection portion.
It is narrowed so that it covers and covers ca and 31cb. After that, the resin 35 is cured by a curing method suitable for the type of the resin 35. This completes the resin sealing.

Thereafter, for example, solder balls as external connection portions 31d are formed on the surface of the semiconductor chip substrate 31 opposite to the surface on which the wiring pattern is formed. Thereby, the semiconductor device 30 can be obtained.

According to the invention of this method of manufacturing a semiconductor device, the gap between the semiconductor chip substrate 31 and the semiconductor chip 33 is sealed with resin, and the leads 31c are formed.
Can be simultaneously sealed with the same resin including the connection portion with the substrate 31 and the chip 33. Accordingly, it is possible to easily manufacture a desired resin-encapsulated semiconductor device in which lead breakage does not easily occur.

Further, since the distance between the substrate 31 and the chip 33 is reduced during the manufacturing, a margin is provided for the lead 31c as compared with before. That is, the lead 31c
The state in which the intermediate portion 31cc is pulled is alleviated.
This also makes it difficult for the leads 31c to break.

Although the embodiments of each invention of this application have been described above, these inventions are not limited to the above-described embodiments, and many modifications or changes can be made.

For example, in the embodiment of the invention of the manufacturing method, a multiple semiconductor chip substrate is used. However, the manufacturing method of the present invention can of course be applied to a case where a single semiconductor chip substrate is used.

[0052]

[0053]

[0054]

As is apparent from the above description, according to the invention of the method for manufacturing a semiconductor device of the present application, a support is provided on a first surface of the support as a substrate for a semiconductor chip. A substrate made of metal foil and having a wiring pattern including a connection part on the semiconductor chip side and a lead part connected to a lead is prepared. Next, in one of the substrate and the semiconductor chip, in a predetermined region on a surface facing the other,
Apply resin. Next, the front part of the lead is bent so as to be in contact with the connection part on the semiconductor chip side, and is connected to this chip side connection part to form a lead. Next, the above-mentioned resin pushes and spreads the interval between the substrate and the chip so that the above-mentioned resin covers the above-mentioned leads including the portion connected to the above-mentioned wiring pattern and the chip-side connection portion.
Narrow. Resin sealing is performed in a process including a series of these processes.

Therefore, the gap between the semiconductor chip substrate and the semiconductor chip and the entire lead can be simultaneously sealed with the same resin. Accordingly, it is possible to easily manufacture a desired resin-encapsulated semiconductor device in which lead breakage does not easily occur.

Further, since the distance between the substrate and the chip is reduced during the manufacturing process, the state in which the middle portion of the lead (31 cc in FIG. 1) is pulled is alleviated as compared with before. This also makes it difficult for the leads to break.

[Brief description of the drawings]

FIG. 1 is a diagram illustrating a semiconductor device obtained by the present invention.

FIG. 2 is a view for explaining an embodiment of the invention of a manufacturing method, and in particular, is a view for explaining a specific example of a multiple semiconductor chip substrate used in a manufacturing process of the embodiment.

FIG. 3 is a process diagram illustrating an embodiment of the invention of a manufacturing method.

FIG. 4 is a process drawing following FIG. 3 for explaining the embodiment of the invention of the manufacturing method;

FIG. 5 is a diagram illustrating a related art and problems.

[Explanation of symbols]

 30: Semiconductor device of the embodiment 31: Substrate for semiconductor chip 31a: Support 31b: Wiring pattern 31c: Lead 31d: External connection part 31e: Through hole 33: Semiconductor chip 33a: Chip side connection part 35: Resin 41: Support Member 43: Bridge (also serves as a predecessor part of lead) 45: Multiple-type semiconductor chip substrate 51: Cutting device 53: Lead bending device

Claims (3)

(57) [Claims] 1. A semiconductor chip substrate comprising: a support;
A substrate provided on the first surface of the support, made of metal foil, and provided with a wiring pattern including a front part of a lead connected to a connection portion on the semiconductor chip side; A step of applying a resin to a predetermined region of a surface facing one of the other, after applying the resin, the substrate and the semiconductor chip are:
A first resin which does not spread the resin to the chip side connection portion.
Opposing at intervals of: bending the front part of the lead of the semiconductor chip substrate facing the semiconductor chip side so as to be in contact with the connection part on the semiconductor chip side, and connecting to the chip side connection part. Forming the lead, and covering the interval between the connected substrate and chip, so that the resin covers the lead, including a portion connected to the wiring pattern and the chip-side connection portion. A step of narrowing the semiconductor device so as to spread it. 2. A semiconductor chip substrate comprising: a support;
A wiring pattern provided on a first surface of the support and made of metal foil and including a precursor part of a lead connected to a connection portion on the semiconductor chip side; and a wiring pattern provided on a second surface of the support and Are connected to the wiring pattern via through holes provided in the support, and the other end includes an external connection part (including a part to be embodied later) used for connection with the outside. Preparing a substrate, a step of applying a resin to a predetermined region of a surface facing the other of the substrate and the semiconductor chip, and after completing the application of the resin, the substrate and the semiconductor chip are A step of facing the resin at a first interval such that the resin does not spread to the chip-side connecting portion; and contacting the leading portion of the lead of the facing semiconductor chip substrate with the connecting portion on the semiconductor chip side. Bent and Forming the lead by connecting to the tip-side connecting portion; and setting the distance between the connected substrate and chip to the resin by connecting the lead to the wiring pattern and the chip-side connecting portion. And a step of narrowing so as to cover and cover the portion where the semiconductor device is located. 3. The method for manufacturing a semiconductor device according to claim 1, wherein an elastic resin is used as the resin.