JP3351876B2 - Semiconductor device mounting structure and method of manufacturing the same - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a semiconductor device mounting structure and a method of manufacturing the same.

[0002]

2. Description of the Related Art When a semiconductor device is mounted on a substrate of electronic equipment, a flip-chip method (FC) in which an integrated circuit element of the semiconductor device is turned to the substrate side and connected to a projecting electrode of the semiconductor device, 2. Description of the Related Art A tape automated bonding method (TAB) in which leads are collectively connected or sequentially connected to leads corresponding to electrodes of a semiconductor device is generally used.

A conventional FC mounting structure and a manufacturing method will be described below with reference to a sectional view of FIG.

An FC mounting structure is a semiconductor device 1 having a protruding electrode 107 made of copper, gold, or the like having a height of 5 to 50 μm.
01 is electrically and mechanically electrically connected to a first wiring 207 on the pixel side and a second wiring 208 on the input side formed of indium and tin oxide (ITO) on the substrate 209 of the liquid crystal display device 204. The connection is made with the adhesive 205. The gap between the semiconductor device 101 and the liquid crystal display device 204 and the semiconductor device 1
01 is covered with an insulating resin 206. Substrate 2
The second wiring 208 on the input side on the line 09 further includes the wiring 202 of the input flexible film 301 and the anisotropic conductive film 3.
02 electrically and mechanically.

[0005] The conventional method of manufacturing FC shown in FIG.
First, a conductive adhesive 205 is provided on the protruding electrode 107 of the semiconductor device 101, and the first wiring 207 on the pixel side and the second wiring 20 on the input side are formed of ITO on the substrate 208.
8, the conductive adhesive 205 is heated and cured at a temperature of 80 to 150 ° C., and the semiconductor device 101 and the liquid crystal display device 208 are connected. After that, the insulating resin 206 is poured into a gap between the semiconductor device 101 and the substrate 209, and is cured by heating or light. Finally, the input flexible film 301 is heated to a temperature of 150 to 250 ° C. by using the anisotropic conductive film 302 for the second wiring 208 on the input side on the substrate 209.
To obtain the structure shown in FIG.

FIG. 8 shows an example in which the conductive adhesive 205 is used to connect the protruding electrodes 107.
Instead of the anisotropic conductive film 30 used to connect the input side second wiring 208 and the input flexible film 301.
2, or conductive beads may be used. Protruding electrode 10
In the case where the anisotropic conductive film 302 is used for the connection of No. 7, the insulating resin 206 becomes unnecessary.

[0007] The projecting electrode 107 can also be formed of conductive beads or solder. When solder is used as the protruding electrode 107, it is necessary to newly form a material wettable by solder on the first wiring 207 and the second wiring 208 formed of ITO on the substrate 209.

Referring to FIG. 8, an input flexible film 301
Has shown the structure in which the wiring 202 is provided only on one side, but the wiring may be provided on both sides, and a multilayer flexible film can be applied.

Next, a conventional TAB mounting structure and a manufacturing method will be described with reference to FIGS.
FIG. 9A is a plan view showing a state where a semiconductor device is connected to a flexible film, and FIG. 9B is a cross-sectional view showing a state where a semiconductor device is connected to a flexible film.
(C) is a cross-sectional view showing a state in which a flexible film to which a semiconductor device is connected is connected to a liquid crystal display device.

As shown in FIGS. 9A and 9B, TAB is formed with a semiconductor device hole 304 for accommodating the semiconductor device 101 on a flexible film 201 having a thickness of 20 to 75 μm. It has a tape feed guide hole 303 for feeding the flexible film 201. A wiring material 202 made of copper for an electric circuit is formed on the flexible film 201 by a sputtering method or a vacuum evaporation method. Alternatively, the wiring material 202 may be formed on the flexible film 201 using an adhesive.

As shown in FIG. 9B, the wiring material 202 formed on the flexible film 201 has a shape like an eave in a region where the semiconductor device hole 304 is formed. I have. Hereinafter, the wiring material 202 that protrudes in an eave-like shape with respect to the region of the semiconductor device hole 304 is referred to as an inner lead 307. The surface of the inner lead 307 made of copper is covered with tin (Sn) formed by plating.

The semiconductor device 101 is provided with a protruding electrode 107 made of gold (Au) having a height of 5 to 20 μm. The semiconductor device 101 is electrically and mechanically connected to the inner lead 307 by utilizing the gold-tin eutectic of the projecting electrode 107 and tin formed on the surface of the inner lead 307. The protruding electrode 107 may be formed on the inner lead 307 side. In this case, the protruding electrode 107 is directly connected to the aluminum electrode of the semiconductor device 101.

Further, the semiconductor device holes 304, the semiconductor device 101, and the inner leads 307 of the flexible film 201 are formed.
Is covered with the insulating resin 206, and the cross-sectional structure shown in FIG. 9B is completed.

A wiring material 202 of TAB shown in FIG.
To the first wiring 207 on the pixel side made of ITO drawn out from the pixel of the liquid crystal display device 208.
9 is pressurized and heated via the anisotropic conductive film 302 to obtain the structure shown in FIG.

[0015]

When the FC described with reference to FIG. 8 is used for an image display device such as a liquid crystal display device,
The number of protruding electrodes of one semiconductor device is 500 or more. Therefore, it is very difficult to apply the inspection probe after the formation of the protruding electrode to the protruding electrode, and it is difficult to determine whether the semiconductor device is good or bad at once.

Particularly, the pitch dimension of the protruding electrodes is 150 μm.
In the case of the following minute values, it is almost impossible to judge the quality. For this reason, after a semiconductor device is mounted on a liquid crystal display device, if a defect occurs in the semiconductor device, it is necessary to remove the semiconductor device from the liquid crystal display device and mount a new semiconductor device on the liquid crystal display device again, which leads to an increase in man-hours And the cost increases.

In the case of TAB described with reference to FIG. 9, inspection of a semiconductor device is possible. However, due to the structure of the flexible film constituting the TAB, the protruding electrodes of the semiconductor device can be formed only on the outer periphery of the semiconductor device. When calculated from the minimum connectable pitch dimension of the inner lead of 80 μm, when the number of protruding electrodes becomes 500 or more as in the case of FC, the required outer peripheral length of the semiconductor device is 40 mm.
That is all. This leads to an increase in the size of the semiconductor device, a reduction in yield and an increase in cost.

When the protruding electrode of the semiconductor device is formed by plating, the common electrode film used as the plating electrode is etched, so that the base of the protruding electrode is narrower than the top. If the protruding electrodes are reduced in size for fine connection and the root diameter is less than 40 μm, the adhesion strength of the protruding electrodes is reduced.

An object of the present invention is to solve the above-mentioned problems and to provide a semiconductor device mounting structure capable of easily inspecting a semiconductor device after a bump electrode is formed, enabling a small and fine connection, and a method of manufacturing the same. .

[0020]

In order to achieve the above object, the present invention employs the following constitution and manufacturing process.

The mounting structure of the semiconductor device according to the present invention has a through hole and a wiring material, a flexible film provided between the substrate having the wiring and the semiconductor device, and a protrusion of the semiconductor device through the through hole. The electrode top is connected to the wiring of the substrate, and the protruding electrode of the semiconductor device and the wiring material of the flexible film are connected by solder.

According to the method of manufacturing a semiconductor device of the present invention, a step of forming a projecting electrode having solder around a base portion on a semiconductor device, and forming a through hole and a wiring material corresponding to the position of the projecting electrode on the semiconductor device. A step of covering and heating the flexible film, a step of inspecting a semiconductor device integrated with the flexible film, a step of cutting the flexible film, and an integrated step with the flexible film. Connecting the protruding electrode of the semiconductor device to the wiring of the substrate.

The mounting structure of the semiconductor device according to the present invention is characterized in that solder is provided around the root of the protruding electrode of the semiconductor device.

According to the method of manufacturing a semiconductor device of the present invention, a step of forming a projecting electrode having solder around a base portion on the semiconductor device, and having a through hole and a wiring corresponding to the position of the projecting electrode on the semiconductor device. Heating the flexible film, covering the semiconductor device integrated with the flexible film, removing the flexible film, and connecting the protruding electrodes of the semiconductor device to the wiring on the substrate. And a step of performing

[0025]

Embodiments of the present invention will be described below with reference to the drawings.

[0026]

Embodiment 1 Embodiment 1 of the present invention will be described with reference to FIGS. 1, 2 and 3. FIG. 1 (f) and 2 are cross-sectional views showing the structure of the bump electrode of the semiconductor device, and FIGS. 1 (a) to 1 (f) are cross-sectional views showing a method of manufacturing the bump electrode of FIG. 1 (f). . FIG. 3C is a cross-sectional view showing a mounting structure of the semiconductor device, and FIGS. 3A to 3C are cross-sectional views for explaining a manufacturing method thereof. First, the structure of the bump electrode of the semiconductor device will be described.

As shown in FIG. 1F, the structure of the protruding electrode in the present invention is such that Al, Cr, C
It has a common electrode film 104 made of u. Common electrode film 10
4 has a solder 106 on the periphery thereof, and a projection electrode 107 made of Cu and Au on the common electrode film 104 and the solder 106.
have. The side wall of the bump electrode 107 is substantially perpendicular to the surface of the semiconductor device 101.

The structure of the bump electrode of the present invention shown in FIG. 2 is characterized in that the top of the bump electrode 107 made of Cu and Au has a mushroom shape, and the other structure is the same as that of FIG. is there.

Next, a method for manufacturing a bump electrode according to the present invention will be described with reference to FIGS. First, as shown in FIG. 1A, a common electrode film 104 is formed on the entire surface of the protective film 103 on the semiconductor device 101 and the aluminum electrode 102 where the protective film 103 is opened. The protective film 103 is formed of an inorganic film such as a silicon oxide film containing phosphorus or a silicon nitride film, an organic film such as a polyimide resin, or a laminated structure of these, and has a thickness of 1 to 5 μm. The common electrode film 104 is made of Al, Cr, C
It is made of a metal multilayer film of u, Ni, Ag, Ti or the like, and is formed by a method such as vacuum deposition, sputtering, and chemical vapor deposition (CVD). The thickness of the common electrode film 104 is formed within a total thickness of 10 μm or less.

Next, as shown in FIG. 1B, a method of forming a photosensitive resin 105 on the entire surface of the common electrode film 104 by spin coating, or a film type photosensitive resin
5 is formed. Thereafter, a photosensitive resin 105 is formed on the common electrode film 104 by photolithography in which an exposure and development process is performed using a predetermined photomask.
It is formed with a thickness of １００100 μm.

Next, as shown in FIG. 1C, solder 106 is formed in the opening of the photosensitive resin 105 by using the common electrode film 104 as a plating electrode to form a solder 106, and then the photosensitive resin 105 is removed. It is desirable that the solder 106 formed on the common electrode film 104 be formed in a closed shape like a donut. The formation and use of the protruding electrodes are possible even when the protruding electrodes are not closed in a donut shape. However, the donut-shaped closed solder 106 has better characteristics than the non-closed donut-shaped solder electrode in terms of the margin for etching the common electrode film 104 in the subsequent process and the strength of the bump electrode. Show.

Next, as shown in FIG. 1D, the photosensitive resin 105 is formed by a method of spin-coating the entire surface of the common electrode film 104 or a method of attaching the film-type photosensitive resin 105 thereto. After that, by photolithography that performs exposure and development processing using a predetermined photomask,
A patterned photosensitive resin 105 is formed. The photosensitive resin 105 has an opening formed between the inner opening and the outer opening of the solder 106 and has a thickness of 10 to 300 μm.

Next, as shown in FIG. 1E, the protruding electrode 107 is formed by plating a metal such as Cu, Au, Ag, or Ni on the opening of the photosensitive resin 105 by using the common electrode film 104 as a plating electrode. Then, the photosensitive resin 105 is removed.

Finally, the common electrode film 104 is removed by etching using the protruding electrode 107 and the solder 106 as a mask, and the protruding electrode 1 having the solder 106 at the base shown in FIG.
07 is obtained.

In FIG. 1D, when plating the opening of the photosensitive resin 105, the plating is performed higher than the upper surface of the photosensitive resin 105, and then the photosensitive resin 105 is removed to form the common electrode film 104. When the protruding electrode 107 and the solder 106 are used as a mask for etching, the mushroom-shaped protruding electrode 107 having the solder at the base shown in FIG. 2 is obtained.

As shown in the sectional view of FIG. 3C, the mounting structure of the semiconductor device according to the first embodiment of the present invention is such that the semiconductor device 101 and the liquid crystal display device 2 sandwich a flexible film 201 therebetween.
04, the protruding electrode 107 of the semiconductor device 101 passes through the through hole 203 of the flexible film 201, and the first electrode 107 on the pixel side of the liquid crystal display device 204 via the conductive adhesive 205.
And the second wiring 208 on the input side. The wiring material 202 of the flexible film 201 and the protruding electrode 107 are connected by the solder 106. The flexible film 201 extends outside the semiconductor device 101 together with the wiring 202. Further, an insulating resin 206 is provided between the semiconductor device 101 and the liquid crystal display device 208.

The method of manufacturing a semiconductor device according to the first embodiment of the present invention has a height of 20 to 200 as shown in FIG.
In the area around the base of the projecting electrode 107 of μm, the projecting electrode 10
The thickness of the semiconductor device 101 having the solder 106 having a thickness of 1/10 to 3/4, including the through-hole 203 and the wiring material 202 corresponding to the position where the projecting electrode 107 is formed, from the tip side of the projecting electrode 107. A flexible film 201 having a thickness of 10 to 150 μm is covered.

The wiring material 202 is mainly made of copper, gold or the like, and preferably has a thickness of 2 to 40 μm. The through hole 203 has a thickness of 0.2 μm so that the bump electrode 107 can pass therethrough.
A gap of at least m is provided. The through hole 203 is a wiring material 2
After forming 02, drill a hole up to 100μm in diameter,
If the thickness is less than 100 μm, the film is formed by etching using a photosensitive resin as a mask or by evaporation using a laser beam.

The flexible film 201 is connected to the semiconductor device 101
After heating, heat at a temperature of 160-250 ° C.
As shown in FIG. 3B, the solder 106 around the root of the protruding electrode 107 is melted, and the protruding electrode 107 and the wiring material 202 of the flexible film 201 are connected by the melted and solidified solder 106.

After the solder 106 is melted and solidified, the height of the protruding electrode 107 penetrating through the through hole 203 of the flexible film 201 is controlled so as to protrude from the upper surface of the flexible film 201 by 2 to 50 μm.

FIG. 3B shows an embodiment in which the wiring material 202 of the flexible film 201 is formed only on the semiconductor device 101 side, but the wiring material 202 is provided on both sides of the flexible film 201. Is also good. Further, the wiring material 202 may be provided only on the opposite side of the semiconductor device 101. Further, the flexible film 201 may have a multilayer structure. Although the wiring material 202 of the flexible film 201 is formed only up to the edge of the through hole 203,
03 may be formed on the inner wall of the flexible film 2
01 may be connected to the wiring material 202 on both surfaces.

The flexible film 201 is desirably a heat-resistant polyimide or the like as a material that withstands heat when the solder 106 is melted.

In the state shown in FIG.
The electrical inspection is performed by bringing the probe for inspection of the semiconductor device 101 into contact with the wiring material 202 of the semiconductor device 101.
01 is determined.

After the quality of the semiconductor device 101 is determined, the flexible film 20 on the AA plane shown in FIG. 3B on the side of the liquid crystal display device 208 corresponding to the first wiring 207 on the pixel side.
1 and the wiring material 202 are cut. After cutting, the semiconductor device is mounted on the liquid crystal display device 204 using the conductive adhesive 205 and the space between the semiconductor device 101 and the substrate 209 is covered with the insulating resin 206, thereby completing the semiconductor device shown in FIG.

The insulating resin 206 formed between the semiconductor device 101 and the substrate 209 shown in FIG. 3C may be omitted depending on the use environment.

The semiconductor device 101 may be connected to the liquid crystal display device 204 by using an anisotropic conductive film 302 shown in FIGS. 8 and 9 instead of the conductive adhesive 205. In that case, the insulating resin 206 becomes unnecessary.

The liquid crystal display device 204 shown in FIG.
The upper second wiring 208 on the output side may be omitted.

In the first embodiment, since the flexible film 201 projecting from the liquid crystal display device 204 corresponds to the input flexible film 301 shown in FIG. A connection area with the 209 is unnecessary. Therefore, the effect that the liquid crystal display device 204 can be reduced in size by the adhesive area of the anisotropic conductive film 302 is obtained.

Further, the connection of the anisotropic conductive film 302 and the second wiring 208 on the input side can be omitted, and the semiconductor device 101 can be directly connected by soldering as shown in FIG. Connect to flexible film 201. Therefore, an effect is obtained that the number of connection points is reduced and connection reliability is improved.

Since the semiconductor device 101 can be easily inspected by the flexible film 201, the liquid crystal display device 2
Since the semiconductor device 101 mounted on the semiconductor device 04 does not contain any defect, the semiconductor device 101 does not need to be replaced.

Furthermore, the inner lead 307 shown in the case of the conventional TAB shown in FIG.
Since the protruding electrodes 107 can be arranged on the entire surface of the substrate 01, fine connections can be made at multiple connection points.

[0052]

Second Embodiment FIG. 4 shows a mounting structure of a semiconductor device according to a second embodiment of the present invention. As shown in the cross-sectional view of FIG. 4, the semiconductor device 101 and the liquid crystal display device 204 are provided with the flexible film 201 interposed therebetween. The protruding electrode 107 of the semiconductor device 101 passes through the through hole 203 of the flexible film 201.
Are connected to the first wiring 207 on the pixel side and the second wiring 2 on the input side of the liquid crystal display device 204 via the conductive adhesive 205.
08. The wiring material 202 of the flexible film 201 and the solder 106 around the root of the protruding electrode 107 are connected to the protruding electrode 107 in a molten and solidified state. The flexible film 201 and the wiring material 202 are cut outside the semiconductor device 101. That is, the flexible film 201 is cut along with the wiring material 202 on the AA plane and the BB plane shown in FIG. Further, an insulating resin 206 is provided between the semiconductor device 101 and the liquid crystal display device 204.

A method for manufacturing a semiconductor device according to the second embodiment of the present invention will be described with reference to FIGS. 3 (a), 3 (b) and 4.
As shown in FIG. 3A, a semiconductor device 101 having a solder 106 having a thickness of 1/10 to 3/4 of the thickness of the projecting electrode 107 around the base of the projecting electrode 107 having a height of 20 to 200 μm. Flexible film 2 having a through hole 203 and a wiring material 202 corresponding to the position where the projecting electrode 107 is formed and having a thickness of 10 to 150 μm from the tip side of the projecting electrode 107.
Put on 01.

The wiring material 202 is mainly made of copper, gold or the like, and preferably has a thickness of 2 to 40 μm. The through hole 203 is formed so that the projecting electrode 107 can pass therethrough.
A gap of 0.2 μm or more is provided between 3 and the protruding electrode 107.

Thereafter, when heating is performed at a temperature of 160 to 250 ° C., the solder 106 around the base of the projecting electrode 107 is melted as shown in FIG. The wiring material 202 is connected with the solder 106.

After the solder 106 is melted and solidified, the height of the protruding electrode 107 penetrating through the through hole 203 of the flexible film 201 is controlled so as to protrude from the upper surface of the flexible film 201 by 2 to 50 μm.

FIG. 3B shows an example in which the wiring material 202 of the flexible film 201 is formed only on the semiconductor device 109 side, but the wiring material 202 is provided on both sides of the flexible film 201. Is also good. Further, the wiring material 202 may be provided only on the opposite side of the semiconductor device 101. Further, the flexible film 201 may have a multilayer structure. Although the wiring material 202 of the flexible film 201 is formed only up to the edge of the through hole 203,
03 may be formed on the inner wall.

The flexible film 201 is preferably made of a material having high heat resistance, such as polyimide, which withstands heat when the solder is melted.

The flexible film 2 in the state shown in FIG.
In this case, an electrical inspection is performed by bringing a probe for inspecting the semiconductor device 101 into contact with the wiring material 202 of the semiconductor device 10.
1 is determined.

After the quality of the semiconductor device 101 is determined, the first wiring 207 and the second wiring 208 of the liquid crystal display device 204 are formed.
The flexible film 201 is cut on the AA surface and the BB surface on the side corresponding to. After the cutting, as shown in FIG. 4, the semiconductor device 101 is mounted on the liquid crystal display device 204 using the conductive adhesive 205, and the input flexible film 301 is further mounted on the input side using the anisotropic conductive film 302. By connecting to the second wiring 208, the semiconductor device shown in FIG. 4 is completed.

The semiconductor device 101 and the substrate 20 shown in FIG.
9 may be omitted depending on the use environment.

The semiconductor device 101 may be connected to the liquid crystal display device 204 by using an anisotropic conductive film 302 instead of the conductive adhesive 205. In that case, insulation resin 2
06 becomes unnecessary.

Further, the semiconductor device 101 and the input flexible film 301 may be connected simultaneously by using the anisotropic conductive film 302.

The semiconductor device 101 is a flexible film 201
Since the inspection can be performed more easily, the semiconductor device 101 mounted on the liquid crystal display device 204 can reduce the incorporation of defects, and does not require replacement of the semiconductor device 101, thereby improving the yield.

[0065]

Third Embodiment A mounting structure of a semiconductor device according to a third embodiment of the present invention will be described with reference to FIG. As shown in the cross-sectional view of FIG. 5, the solder 106 around the base of the projecting electrode 107 of the semiconductor device 101 is melted and solidified.
Reinforce the base of the. Protruding electrode 107 of semiconductor device 101
Are the first wiring 207 on the pixel side of the liquid crystal display device 204 and the second wiring 20 on the input side via the conductive adhesive 205.
8 is connected. Further, an insulating resin 206 is provided between the semiconductor device 101 and the substrate 209 of the liquid crystal display device 204.
Is provided.

A method of manufacturing a semiconductor device according to a third embodiment of the present invention will be described with reference to FIGS.
As shown in FIG. 3A, a semiconductor device 109 having a solder 106 having a thickness of 1/10 to 3/4 of the thickness of the projecting electrode 107 around the base of the projecting electrode 107 having a height of 20 to 200 μm. The flexible film 2 having a thickness of 10 to 150 μm having a through hole 203 and a wiring material 202 corresponding to the formation position of the projecting electrode 107 from the tip side of the projecting electrode 109.
Put on 01.

The wiring material 202 is mainly formed of copper, gold or the like, and preferably has a thickness of 2 to 40 μm. The through hole 203 is formed so that the projecting electrode 107 can pass therethrough.
A gap of 0.2 μm or more is provided between 3 and the protruding electrode 107.

Thereafter, when heating is performed at a temperature of 160 to 250 ° C., the solder 106 around the base of the projecting electrode 107 is melted as shown in FIG. The wiring material 202 is connected with the solder 106 melted and solidified.

FIG. 3B shows the embodiment in which the wiring material 202 of the flexible film 201 is formed only on the semiconductor device 101 side, but the wiring material 202 is provided on both sides of the flexible film 201. Is also good. Further, the wiring material 202 may be provided only on the opposite side of the semiconductor device 101. Further, the flexible film 201 may have a multilayer structure. The wiring material 202 of the flexible film 201 is
Although it is formed only up to the edge of the through hole 203, it may be formed on the inner wall of the through hole 203.

The flexible film 201 is preferably made of a material having high heat resistance, such as polyimide, which is resistant to heat when melting the solder.

The flexible film 2 in the state shown in FIG.
In this case, an electrical inspection is performed by bringing a probe for inspecting the semiconductor device 101 into contact with the wiring material 202 of the semiconductor device 10.
1 is determined.

After the quality of the semiconductor device 101 is determined, FIG.
The flexible film 201 shown in (b) is removed by heating. The solder 106 that has been melted and solidified when it is removed reinforces the root of the protruding electrode 107. Then, the conductive adhesive 205
The semiconductor device 101 is mounted on the liquid crystal display device 204 by using the same, and further, as shown in FIG.
Is used to connect the input flexible film 301 to the second wiring 208 on the input side. As a result, the semiconductor device shown in FIG. 5 is completed.

The semiconductor device 101 and the substrate 20 shown in FIG.
9 may be omitted depending on the use environment.

The semiconductor device 101 may be connected to the liquid crystal display device 204 by using an anisotropic conductive film 302 instead of the conductive adhesive 205. In that case, insulation resin 2
06 becomes unnecessary.

Further, the semiconductor device 101 and the input flexible film 301 may be simultaneously connected using the anisotropic conductive film 302.

The semiconductor device 101 is a flexible film 201
Since the inspection can be performed more easily, the semiconductor device 101 mounted on the liquid crystal display device 204 can reduce the incorporation of defects, and does not require replacement of the semiconductor device 101, thereby improving the yield.

FIG. 6 shows the structure of a flexible film used in Examples 1 to 3 of the present invention. As shown in FIG. 6, the flexible film 201 can be formed in a tape shape like TAB in FIG. 9A described in the section of the related art. For this reason, it has the feature of being excellent in mass productivity like the TAB method. The flexible film 201 includes a tape feed guide hole 303, a wiring material 202, and a through hole 203.
And In the present invention, unlike the TAB, the inner lead is not required, so that the inner lead can be prevented from being bent and the yield can be improved.
Furthermore, since the through holes 203 can be formed in a matrix, it is possible to cope with fine connections with more terminals than TAB.

FIG. 7 shows a structure in which the wiring of the flexible film 201 used in the first and second embodiments is shared. As shown in FIG. 7, common terminals such as inputs of the semiconductor device 101 can be formed of a wiring material 202 like a bus line wiring 202a. FIG.
In (a), the layout of the input corresponding terminals of the semiconductor device is changed to change the wiring material 2 of the flexible film 201.
02 can be made into a bus line only on one side. In FIG. 7B, since the wiring material 202 is formed on both surfaces of the flexible film 201, it is not necessary to change the layout of the protruding electrodes on the semiconductor device 101 side.

In the above description, the substrate on which the semiconductor device is mounted has been described as a liquid crystal display device. However, the present invention may be applied to a substrate of a plasma display device, an electroluminescence display device, or the like, or a substrate of an electronic device. Absent.

[0080]

As described above, according to the present invention, the semiconductor device can be inspected after the formation of the protruding electrodes of the semiconductor device, and a remarkable effect can be obtained in improving the yield of non-defective products. Also,
Since there is no mixing of defects after mounting the semiconductor device, it is not necessary to replace the semiconductor device, and the manufacturing cost can be reduced.

Since the base of the protruding electrode is reinforced with solder, a protruding electrode having better adhesion strength than the conventional protruding electrode can be obtained, it is possible to cope with fine connection, and the range of mounting process conditions can be expanded. There is. If the connection is made under the same conditions, the mounting quality can be stabilized, and a great effect can be obtained for quality improvement.

Further, in the case of the first embodiment, since the connection of the input side flexible film is not required, the number of connection points is reduced, connection reliability is improved, and the mounting area of a substrate such as a liquid crystal display device is reduced. The effect is obtained.

Further, in the case of the first and second embodiments, when a plurality of semiconductor devices are connected, it is possible to form a bus line by sharing the wiring on the input side. It is possible to implement.

[Brief description of the drawings]

FIG. 1 is a sectional view showing a mounting structure of a semiconductor device and a method of manufacturing the same in a first embodiment of the present invention in the order of steps.

FIG. 2 is a cross-sectional view illustrating a structure of a bump electrode according to the first embodiment of the present invention.

FIG. 3 is a cross-sectional view showing a mounting structure of a semiconductor device and a method of manufacturing the same in the order of steps according to the first embodiment of the present invention.

FIG. 4 is a sectional view showing a mounting structure of a semiconductor device according to a second embodiment of the present invention.

FIG. 5 is a sectional view showing a mounting structure of a semiconductor device according to a third embodiment of the present invention.

FIG. 6 is a plan view showing a structure of a flexible film according to an embodiment of the present invention.

FIG. 7 is a plan view showing a structure of a flexible film according to an embodiment of the present invention.

FIG. 8 is a cross-sectional view showing a mounting structure of a semiconductor device in a conventional example.

9A and 9B are a plan view and a cross-sectional view illustrating a mounting structure of a semiconductor device in a conventional example and a manufacturing method for forming the structure.

[Explanation of symbols]

 Reference Signs List 101 semiconductor device 106 solder 107 projecting electrode 201 flexible film 202 wiring material 203 through hole 204 liquid crystal display device 205 conductive adhesive 209 substrate

Claims (3)

(57) [Claims] 1. A has a through-hole and the wiring material, comprising a flexible film provided between the substrate and the semiconductor device having a wiring, protruding electrode top of said semiconductor device through said through-holes before
Mounting structure of a semiconductor device whose serial connected to the wiring board, characterized in that said protruding electrode of the semiconductor device and the wiring material of the flexible film is connected by soldering. Wherein the steps of forming a projecting electrode on the semiconductor device having solder around the root portion, a flexible film having a through hole and the wiring material corresponding to the position of the projecting electrode on the semiconductor device and heating is covered, a step for inspecting the became flexible film integrally the semiconductor device, the step of cutting the flexible film, the semiconductor became the flexible film integrally In front of the device
The method of manufacturing a semiconductor device characterized by a step of connecting the serial protruding electrode on the substrate of the wiring. Cover wherein forming the protruding electrodes having solder around the root portion to a semiconductor device, a flexible film having the through hole and the wiring corresponding to the position of the projecting electrode on the semiconductor device and heating Te, a step for inspecting the became flexible film integrally the semiconductor device, the step of removing the flexible film, connecting the protruding electrodes of the semiconductor device on a wiring substrate And a method for manufacturing a semiconductor device.