JP3338422B2 - Ultrafine particle spraying method - Google Patents
Ultrafine particle spraying methodInfo
- Publication number
- JP3338422B2 JP3338422B2 JP2000205601A JP2000205601A JP3338422B2 JP 3338422 B2 JP3338422 B2 JP 3338422B2 JP 2000205601 A JP2000205601 A JP 2000205601A JP 2000205601 A JP2000205601 A JP 2000205601A JP 3338422 B2 JP3338422 B2 JP 3338422B2
- Authority
- JP
- Japan
- Prior art keywords
- particle material
- spraying
- ultrafine particle
- substrate
- ultrafine
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000011882 ultra-fine particle Substances 0.000 title claims description 190
- 238000005507 spraying Methods 0.000 title claims description 79
- 239000000463 material Substances 0.000 claims description 166
- 239000000758 substrate Substances 0.000 claims description 112
- 238000000034 method Methods 0.000 claims description 57
- 239000002245 particle Substances 0.000 claims description 56
- 239000010419 fine particle Substances 0.000 claims description 34
- 238000000227 grinding Methods 0.000 claims description 21
- 238000005498 polishing Methods 0.000 claims description 17
- 238000007790 scraping Methods 0.000 claims description 16
- 238000003825 pressing Methods 0.000 claims description 12
- 238000012545 processing Methods 0.000 claims description 11
- 239000002994 raw material Substances 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 8
- 239000007921 spray Substances 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 7
- 230000001133 acceleration Effects 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 238000010298 pulverizing process Methods 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 4
- 238000010884 ion-beam technique Methods 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 3
- 230000005686 electrostatic field Effects 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 239000002344 surface layer Substances 0.000 claims description 3
- 238000001354 calcination Methods 0.000 claims description 2
- 239000012528 membrane Substances 0.000 claims description 2
- 230000035939 shock Effects 0.000 claims description 2
- 238000009826 distribution Methods 0.000 claims 3
- 230000002093 peripheral effect Effects 0.000 claims 3
- 239000000203 mixture Substances 0.000 claims 2
- 239000011236 particulate material Substances 0.000 claims 2
- 238000007664 blowing Methods 0.000 claims 1
- 238000004880 explosion Methods 0.000 claims 1
- 238000002156 mixing Methods 0.000 claims 1
- 239000002105 nanoparticle Substances 0.000 claims 1
- 239000010408 film Substances 0.000 description 149
- 230000015572 biosynthetic process Effects 0.000 description 13
- 230000002950 deficient Effects 0.000 description 8
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 7
- 230000007246 mechanism Effects 0.000 description 7
- 230000003746 surface roughness Effects 0.000 description 7
- 238000002474 experimental method Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000006073 displacement reaction Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000001000 micrograph Methods 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- 230000002411 adverse Effects 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000033001 locomotion Effects 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000013049 sediment Substances 0.000 description 2
- 229920001875 Ebonite Polymers 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- KOVRZNUMIKACTB-UHFFFAOYSA-N beta-CCE Natural products N1C2=CC=CC=C2C2=C1C=NC(C(=O)OCC)=C2 KOVRZNUMIKACTB-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000011163 secondary particle Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Landscapes
- Spray Control Apparatus (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Powder Metallurgy (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
Description
【０００１】[0001]
【産業上の利用分野】この発明はセラミックス材料や金
属材料などの１００μｍ以下の超微粒子材料を基板上に
供給して成膜する技術に関するものである。このような
超微粒子材料膜の成膜技術は機能性セラミックス薄膜や
金属薄膜を基板上に製造する分野において使用される。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a technique for forming a film by supplying an ultrafine particle material of 100 .mu.m or less such as a ceramic material or a metal material onto a substrate. Such an ultrafine particle material film forming technique is used in the field of manufacturing a functional ceramic thin film or a metal thin film on a substrate.
【０００２】[0002]
【従来の技術】超微粒子材料製の膜を製造する技術の一
つとして、超微粒子材料を搬送ガスと混合して、ノズル
より基板上に吹き付け、膜を形成する超微粒子膜成膜技
術が知られている。2. Description of the Related Art As one of the techniques for producing a film made of an ultra-fine particle material, there is known an ultra-fine particle film forming technique in which an ultra-fine particle material is mixed with a carrier gas and sprayed from a nozzle onto a substrate to form a film. Have been.
【０００３】[0003]
【解決すべき課題】しかるに、この従来の超微粒子膜成
膜技術においては、表面の不平滑性、不平坦性、密度の
不均一性などの問題があった。例えば、従来の超微粒子
膜成膜法においては、使用する超微粒子材料中に吹き付
けによっては成膜することのできない物理的性状（１μ
ｍ以上の大きな粒径、加速不足の微粒子材料など）の不
良粒子が混入して、これが吹き付けによって基板上の超
微粒子材料の堆積物にも混入するという問題があった。However, the conventional ultrafine particle film forming technique has problems such as surface unevenness, unevenness, and non-uniform density. For example, in the conventional ultrafine particle film forming method, physical properties (1 μm) that cannot be formed by spraying into the used ultrafine particle material are used.
However, there is a problem that defective particles having a large particle size of m or more, a particle material with insufficient acceleration, etc.) are mixed, and the mixed particles are also mixed into a deposit of the ultrafine particle material on the substrate by spraying.
【０００４】すなわち膜の堆積途中に噴射される超微粒
子材料中に粒径が大きく十分な速度を持っていない粒子
３１（不良粒子３１）が含まれていると、図９（ａ）に
模式的に示し、かつ図１０（ａ）に断面を顕微鏡写真で
示すように、粒径が大きい不良粒子３１が成長途中の堆
積物３２の表面に沈着し、これがマスクとなって、その
後この沈着した不良粒子３１が置かれた表面には堆積は
起こらず、洗浄で不良粒子が除去された後には図９ａ及
び図１０ｂに示すように、膜３３が欠けたように形成さ
れない窪み部分３４が発生してしまう。[0004] That is, if ultrafine particles injected during the deposition of a film include particles 31 (defective particles 31) having a large particle diameter and not having a sufficient velocity, a schematic diagram in FIG. As shown in FIG. 10 (a) and a cross-sectional micrograph in FIG. 10 (a), defective particles 31 having a large particle size are deposited on the surface of the deposit 32 in the course of growth and serve as a mask. No deposition occurs on the surface on which the particles 31 are placed, and after the defective particles have been removed by cleaning, as shown in FIG. 9A and FIG. I will.
【０００５】また、図１１の膜表面の顕微鏡写真に示す
ように、膜の表面も非常に荒れたものとなり、その後の
堆積にも悪影響を及ぼす。Further, as shown in the micrograph of the film surface in FIG. 11, the surface of the film becomes very rough, which adversely affects the subsequent deposition.
【０００６】また、不良粒子は堆積物３２中で浮いた状
態になるので、組織が緻密にならず、後続の吹き付けら
れた超微粒子材料によって堆積物の表面が侵食され、や
はり図９（ｂ）に示すように、膜３３が欠けたように形
成されない窪み部分３４が発生してしまい、膜の表面も
荒れたものとなり、その後の堆積にも悪影響を及ぼす。
またこのことは、形成された膜の微細構造にも悪影響を
及ぼし、一般に均質に制御された膜の微細組織が重要と
なる電子セラミクス材料などに本手法を適用する場合、
優れた電気特性を期待できないなどの問題点があった。Further, since the defective particles float in the sediment 32, the structure does not become dense, and the surface of the sediment is eroded by the subsequent sprayed ultra-fine particle material. As shown in FIG. 7, a recessed portion 34 not formed as if the film 33 was chipped was generated, the surface of the film became rough, and the subsequent deposition was adversely affected.
This also has an adverse effect on the microstructure of the formed film, and in general, when applying this method to electronic ceramic materials and the like, in which homogeneous microstructure of the film is important.
There were problems such as not being able to expect excellent electrical characteristics.
【０００７】この他、実際の成膜を行うと、ノズルから
噴射される微粒子の量を均一・一定にすることは困難
で、膜厚が場所によってばらつくなどの問題があり、均
質な膜厚制御や表面粗さの制御が困難であり、したがっ
て、特性の均一な良質の膜を形成する際に大きな傷害と
なる。またこのような膜厚の不均一さや表面の荒れは、
本手法を光学薄膜に適用する場合、大きな問題になって
いた。In addition, when an actual film is formed, it is difficult to make the amount of fine particles sprayed from the nozzle uniform and constant, and there is a problem that the film thickness varies from place to place. In addition, it is difficult to control the surface roughness and the surface roughness. In addition, such unevenness of film thickness and surface roughness
When applying this method to an optical thin film, it was a big problem.
【０００８】このようなことから、膜内の超微粒子材料
の接合が充分で、組織が緻密であり表面が平滑であり、
密度の均一な膜を製造することができる超微粒子材料の
成膜技術の開発が望まれている。From the above, the bonding of the ultrafine particle material in the film is sufficient, the structure is dense and the surface is smooth,
There is a demand for the development of a technique for forming a film of ultrafine particles capable of producing a film having a uniform density.
【０００９】この発明は上記の如き事情に鑑みてなされ
たものであって、膜内の超微粒子材料の接合が充分で、
組織が緻密であり、表面が平滑であり、かつ密度の均一
な膜を製造することができる超微粒子材料吹き付け成膜
装置を提供することを目的とするものである。[0009] The present invention has been made in view of the above circumstances, and the bonding of the ultrafine particle material in the film is sufficient,
It is an object of the present invention to provide an ultrafine particle material spraying film forming apparatus capable of producing a film having a dense structure, a smooth surface and a uniform density.
【００１０】[0010]
【００１１】[0011]
【課題を解決するための手段】 この目的に対応して この
発明の超微粒子材料吹き付け成膜方法は、超微粒子材料
を基板表面上に吹き付けによって供給して形成した堆積
膜によって前記超微粒子材料の膜を形成する超微粒子材
料吹き付け成膜方法であって、前記超微粒子材料の吹き
付けの流れの前記基板表面への入射角度を−６０°〜−
５°（−１０°〜−５°を除く）または＋５°〜＋６０
°（＋５°〜＋１０°を除く）にすることを特徴として
いる。 SUMMARY OF THE INVENTION In accordance with this object, a method for spraying an ultrafine particle material according to the present invention is a method for spraying an ultrafine particle material onto a substrate surface by spraying the ultrafine particle material on a substrate surface. An ultra-fine particle material spraying film forming method for forming a film, wherein an angle of incidence of the spray flow of the ultra-fine particle material on the substrate surface is −60 ° to −.
5 ° (excluding -10 ° to -5 °) or + 5 ° to +60
° (excluding + 5 ° to + 10 °) .
【００１２】またこの発明の超微粒子材料吹き付け成膜
装置は、超微粒子材料を基板表面上に吹き付けによって
供給して形成した前記超微粒子材料の堆積膜から前記超
微粒子材料の膜を形成する超微粒子材料吹き付け成膜装
置であって、減圧室内の前記基板表面に前記超微粒子材
料を吹き付ける吹き付け装置を有し、前記超微粒子材料
の吹き付けの流れの前記基板表面への入射角が−６０°
〜−５°（−１０°〜−５°を除く）または＋５°〜＋
６０°（＋５°〜＋１０°を除く）になるように前記吹
き付け装置と前記基板とが配置されていることを特徴と
している。Further, according to the present invention, there is provided an ultra-fine particle material spraying film forming apparatus, wherein the ultra-fine particle material is formed by spraying the ultra-fine particle material onto a substrate surface to form a film of the ultra-fine particle material. A material spraying film forming apparatus, comprising: a spraying apparatus for spraying the ultrafine particle material onto the substrate surface in a reduced pressure chamber, wherein an angle of incidence of the flow of the ultrafine particle spray on the substrate surface is −60 °.
To -5 ° (excluding -10 ° to -5 °) or + 5 ° to +
The spraying device and the substrate are arranged so as to be 60 ° (excluding + 5 ° to + 10 °) .
【００１３】[0013]
【実施の態様】以下この発明の詳細を一実施例を示す図
面について説明する。図１において、１は超微粒子材料
吹き付け成膜装置である。超微粒子材料吹き付け成膜装
置１はチャンバー１０内に基板３と超微粒子材料吹き付
け装置４を配設している。超微粒子材料吹き付け装置４
としてはノズル８や静電加速銃を使用することができ
る。基板３は形成された膜を支持するためのものであ
る。超微粒子材料の堆積膜に機械的衝撃力を負荷する機
械的衝撃力負荷装置５並びにさらに必要に応じて超微粒
子材料の堆積膜の表面を平坦にする平坦化装置２６の一
例として、付着粒子除去装置６と膜面加工装置７を基板
の移動経路に沿って配設している。チャンバー１０とし
ては内部が減圧可能な真空チャンバーを使用することが
できる。チャンバー１０として真空チャンバーを使用し
た場合の真空度は１０〜２００ｔｏｒｒ程度、好ましく
は１００ｔｏｒｒ程度である。DESCRIPTION OF THE PREFERRED EMBODIMENTS The details of the present invention will be described below with reference to the drawings showing one embodiment. In FIG. 1, reference numeral 1 denotes an ultrafine particle material spraying film forming apparatus. The apparatus 1 for spraying ultrafine particles has a substrate 3 and an apparatus 4 for spraying ultrafine particles in a chamber 10. Ultra fine particle material spraying device 4
For example, a nozzle 8 or an electrostatic acceleration gun can be used. The substrate 3 is for supporting the formed film. As an example of the mechanical impact load device 5 for applying a mechanical impact force to the deposited film of the ultrafine particle material and, if necessary, the flattening device 26 for flattening the surface of the deposited film of the ultrafine material, The apparatus 6 and the film surface processing apparatus 7 are arranged along the movement path of the substrate. As the chamber 10, a vacuum chamber whose inside can be depressurized can be used. When a vacuum chamber is used as the chamber 10, the degree of vacuum is about 10 to 200 torr, preferably about 100 torr.
【００１４】ノズル８は形成しようとする膜の材料であ
る超微粒子材料を基板３の表面２０上に吹き付け供給し
て堆積させて堆積膜２ａを形成するものである。基板３
は基板駆動装置９に取り付けられ、基板駆動装置に駆動
されてチャンバー内で直線変位可能であり、また姿勢が
可変である。The nozzle 8 sprays and supplies an ultra-fine particle material, which is the material of the film to be formed, onto the surface 20 of the substrate 3 to form a deposited film 2a. Substrate 3
Is mounted on the substrate driving device 9, is driven by the substrate driving device, can be linearly displaced in the chamber, and has a variable posture.
【００１５】ノズル４もチャンバー内でガイドレール２
１に沿って直線変位可能に構成してもよくまた回転中心
２２（図２参照）も周りに回転して姿勢を可変に構成し
てもよい。ノズル４から基板表面２０に吹き付けられた
超微粒子材料の基板表面２０への入射角度α（図２に示
す基板表面２０の垂線２５とノズル８から吹き出した超
微粒子材料の流れ２３の中心線２４とのなす角：この明
細書において同じ）が±５°から±６０°までの値を採
ることが可能なように、ノズル８と基板表面２０とは必
要な姿勢をもって配置されている。The nozzle 4 also has a guide rail 2 in the chamber.
1, and the rotation center 22 (see FIG. 2) may also be rotated around to change the posture. The angle of incidence α of the ultrafine particle material sprayed from the nozzle 4 onto the substrate surface 20 to the substrate surface 20 (the perpendicular line 25 of the substrate surface 20 shown in FIG. The nozzle 8 and the substrate surface 20 are arranged in a required posture such that the angle formed by the same angle in this specification can take a value from ± 5 ° to ± 60 °.
【００１６】このためにノズル８と基板３を支持する基
板駆動装置９は固定であってもよいが、両者は相対回転
可能な構造にしてもよく、そのために、ノズル８と基板
駆動装置９のいずれか一方または両方が回転変位可能
で、これによって前記のように、姿勢が可変である構成
にしてもよい。超微粒子吹き付け装置４と基板３は超微
粒子を超微粒子吹き付け装置４から吹き付けられるとき
の吹き付けの流れの少なくとも一部分が基板３の表面に
斜めに、すなわち、基板３の垂線と平行でも垂直でもな
い所定の角度で、入射させることができるように構成さ
れている。For this purpose, the nozzle 8 and the substrate driving device 9 for supporting the substrate 3 may be fixed, but they may be structured to be rotatable relative to each other. Either or both may be rotationally displaceable, whereby the attitude may be variable as described above. The ultra-fine particle spraying device 4 and the substrate 3 are arranged such that at least a part of the flow of the spray when the ultra-fine particles are sprayed from the ultra-fine particle spraying device 4 is oblique to the surface of the substrate 3, that is, is not parallel or perpendicular to the perpendicular of the substrate 3. At an angle of.
【００１７】このために、図３に示すように、超微粒子
吹き付け装置４から噴射される超微粒子材料の流れが、
超微粒子吹き付け装置４からの流れの中心の周りに−６
０°〜−５°または＋５°〜＋６０°の末広がりをもつ
ように構成する。このとき使用する吹き付け装置４の一
例を図４ｂに示す。或いは、図２に示すように、超微粒
子吹き付け装置４からの噴射される超微粒子材料の吹き
付けの流れの基板表面２０への入射角度を−６０°〜−
５°または＋５°〜＋６０°、特に好ましくは−３０°
〜−５°または＋５°〜＋３０°となるように構成す
る。このために基板３を支持する基板駆動装置９及び超
微粒子吹き付け装置４のいずれか一方、または双方を回
転変位可能に構成する。このとき使用する吹き付け装置
４の一例を図４ａに示す。For this purpose, as shown in FIG. 3, the flow of the ultrafine particle material injected from the ultrafine particle spray device 4 is
-6 around the center of the flow from the ultrafine particle spraying device 4
It is configured to have a divergence of 0 ° to -5 ° or + 5 ° to + 60 °. FIG. 4B shows an example of the spraying device 4 used at this time. Alternatively, as shown in FIG. 2, the angle of incidence of the spraying flow of the ultra-fine particle material injected from the ultra-fine particle spraying device 4 on the substrate surface 20 is −60 ° to −−.
5 ° or + 5 ° to + 60 °, particularly preferably -30 °
-5 ° or + 5 ° to + 30 °. To this end, one or both of the substrate driving device 9 and the ultrafine particle spraying device 4 that support the substrate 3 are configured to be rotationally displaceable. FIG. 4A shows an example of the spraying device 4 used at this time.
【００１８】この発明の超微粒子材料吹き付け成膜方法
は、一例として以上説明した超微粒子材料吹き付け成膜
装置１を使用して次に説明するように実施される。すな
わち、チャンバー１０を減圧状態にして、基板３を基本
駆動装置９に取り付ける。この状態で超微粒子材料２１
をノズル４から基板表面２０上に吹き付けて供給する。
この時の超微粒子材料２１の基板表面２０への入射角度
は−６０°〜−５°または＋５°〜＋６０°であり、好
ましくは−３０°〜−５°または＋５°〜＋３０°であ
る。この吹き付け供給によって基板表面２０上に堆積膜
２ａが形成される。The method of spraying ultrafine particle material according to the present invention is carried out as follows using the ultrafine particle material spraying film forming apparatus 1 described above as an example. That is, the substrate 3 is attached to the basic driving device 9 while the chamber 10 is in a reduced pressure state. In this state, the ultrafine particle material 21
Is sprayed onto the substrate surface 20 from the nozzle 4 and supplied.
At this time, the incident angle of the ultrafine particle material 21 to the substrate surface 20 is −60 ° to −5 ° or + 5 ° to + 60 °, preferably −30 ° to −5 ° or + 5 ° to + 30 °. By this spraying supply, the deposited film 2a is formed on the substrate surface 20.
【００１９】（実験１）この実験は、図５に示すように
本手法を用いてＳｉ基板上にチタン酸ジルコン酸亜鉛
（ＰＺＴ）を形成する際に、ＰＺＴ超微粒子流を基板面
に角度を変えて吹き付けたときの成膜速度を調べた結果
である。図６から、入射確度が０度〜２０度の範囲内で
は大きな成膜速度の変化は認められないが、２０度を越
えたあたりから徐々に成膜速度は低下していき、ある閾
値角度β１，２，３を越えると、Ｓｉ基板が削られるこ
とが判る。このことは、超微粒子粒の基板への入射角度
を変えることで基板あるいは形成された膜の表面がエッ
チング（削りとられ）され、さらにその角度を調節する
ことで、成膜中の膜の堆積とエッチングのバランスを調
整できることを示すものである。また、超微粒子粒の噴
射速度は図６中に書き込まれたガスの消費量にほぼ比例
し、この閾値角度βは噴射速度に応じても変化する。ま
た、同様の実験から、この微粒子流の基板への入射角度
に対する堆積とエッチングの割合は、使用する粒子の材
質や粒径などの物性に応じても変化することが確認され
た。さらに、微粒子の入射角度が約６０度以上の場合
は、微粒子の基板に対する力学的作用も著しく小さくな
り、エッチング作用も観察されなくなった。(Experiment 1) In this experiment, as shown in FIG. 5, when zinc titanate zirconate (PZT) was formed on a Si substrate using this method, the flow of PZT ultrafine particles was directed to the substrate surface at an angle. It is a result of examining a film forming speed when spraying is changed. FIG. 6 shows that a large change in the film formation rate is not observed when the incidence accuracy is in the range of 0 to 20 degrees, but the film formation rate gradually decreases from about 20 degrees, and a certain threshold angle β1 , 2, and 3, the Si substrate is shaved. This means that the surface of the substrate or the formed film is etched (sharpened) by changing the incident angle of the ultrafine particles to the substrate, and the angle is further adjusted, thereby depositing the film during film formation. This shows that the balance between etching and etching can be adjusted. In addition, the injection speed of the ultrafine particles is substantially proportional to the consumption of the gas written in FIG. 6, and the threshold angle β changes according to the injection speed. Further, from the same experiment, it was confirmed that the ratio of deposition and etching with respect to the angle of incidence of the flow of the fine particles on the substrate also changed depending on the physical properties such as the material and the particle size of the particles used. Further, when the incident angle of the fine particles was about 60 degrees or more, the mechanical action of the fine particles on the substrate was significantly reduced, and the etching action was not observed.
【００２０】図７は、微粒子流の基板への入射角度が形
成された膜の表面粗さに与える影響を調べたものであ
る。入射角度が、０度〜２０度の範囲で形成される膜の
表面粗さ（Ｒａ）は急速に低下（滑らか）することがわ
かる。従って、この場合滑らかな表面をもつ膜を形成す
るには、成膜速度を考慮すると、微粒子流の基板への入
射角度は、おおよそ５度〜３０度程度の範囲にすればよ
いことになるがこれに限定されるものではない。これら
の結果から、一般的には、使用する原料粉末の状態、基
板の材質、超微粒子の噴射速度に応じて、基板への超微
粒子流の入射角度を変えてやることで、形成された膜表
面に強固に沈着し成膜にあずからなかった微粒子（後続
微粒子に対してマスクとして働くこともある。）を効率
よく除去し、最適な表面粗さと膜の緻密さならびに成膜
速度を実現することができる。FIG. 7 shows the effect of the angle of incidence of the flow of fine particles on the substrate on the surface roughness of the formed film. It can be seen that the surface roughness (Ra) of the film formed when the incident angle is in the range of 0 to 20 degrees is rapidly reduced (smooth). Therefore, in order to form a film having a smooth surface in this case, the angle of incidence of the flow of fine particles on the substrate should be in the range of about 5 to 30 degrees in consideration of the film formation rate. It is not limited to this. From these results, generally, the film formed by changing the incident angle of the ultra-fine particle flow on the substrate according to the state of the raw material powder to be used, the material of the substrate, and the injection speed of the ultra-fine particles. Efficiently removes fine particles that have firmly deposited on the surface and did not participate in film formation (sometimes function as a mask for subsequent particles), and achieves optimal surface roughness, denseness of the film, and film formation speed. be able to.
【００２１】（実験２）これは、チタン酸ジルコン酸鉛
（ＰＺＴ、比重：７．７８ｇ／ｃｍ３）について、超微
粒子を基板に吹き付ける際に、前記超微粒子流の基板へ
の入射角度を変えて成膜した結果である。成膜条件とし
ては、両方の場合とも、平均粒径で約０．７μｍ、粒径
範囲が０．０７〜３μｍのＰＺＴ原料超微粒子を用い、
搬送ガスに空気を用い、開口面積０．４ｍｍ×１０ｍｍ
の成膜用ノズルを用いていた。成膜時の真空度は１Ｔｏ
ｒｒで、基板加熱などの熱的アシストの無い状態で原料
超微粒子を厚さ約１ｍｍのガラス基板に吹き付け成膜を
行った。(Experiment 2) This is based on the case where lead zirconate titanate (PZT, specific gravity: 7.78 g / cm 3) is sprayed on the substrate by changing the angle of incidence of the flow of the ultra fine particles on the substrate. This is the result of film formation. As the film forming conditions, in both cases, PZT raw material ultrafine particles having an average particle size of about 0.7 μm and a particle size range of 0.07 to 3 μm were used,
Using air as carrier gas, opening area 0.4mm × 10mm
Was used. The degree of vacuum during film formation is 1 To
At rr, the raw material ultrafine particles were sprayed onto a glass substrate having a thickness of about 1 mm in a state without thermal assistance such as substrate heating to form a film.
【００２２】その結果、図８の左の成膜結果の写真が示
すように、ノズルから噴射される原料超微粒子流の基板
への入射角度が０度（超微粒子流が基板面に垂直に入射
する）の場合、基板に衝突しても粉砕されず接合できな
かった原料超微粒子が、衝突圧力で押し固められた圧粉
体となって、堆積物表面に強固に凝着し、これが、除去
しきれないため、その後、この表面に飛来する上記酸化
チタン超微粒子に対して衝突による衝撃力を吸収するク
ッションの役割をするため、衝突エネルギーを吸収し、
その後、飛来する原料超微粒子に対してマスクの役割を
し、粉砕が困難になるため、形成された堆積物（膜）表
面を観察すると、非常に大きな凹凸と、凝着した圧粉体
が見られ、また、基板裏面側から観察しても、凝着した
原料超微粒子の圧粉体を含んだ密度の低い堆積物となっ
た。この様なＰＺＴの堆積物は、膜内部に含まれる圧粉
体の結晶子サイズが小さいため、堆積後、熱処理を行っ
ても粒成長が生ぜず、空孔を形成し、その結果、耐電圧
も５０ｋＶ／ｃｍと低く絶縁破壊を起こしやすく、応用
上重要な機械特性ならびに電気特性が低下するなどの問
題を生じた。As a result, as shown in the photograph of the film formation result on the left side of FIG. 8, the angle of incidence of the raw material ultra-fine particle stream injected from the nozzle on the substrate is 0 degree (the ultra-fine particle flow is perpendicularly incident on the substrate surface). In the case of), the raw material ultrafine particles that could not be joined without being pulverized even when they collided with the substrate became a compact compacted by the collision pressure and firmly adhered to the surface of the deposit, and this was removed. After that, to serve as a cushion to absorb the impact force due to collision with the titanium oxide ultrafine particles flying on this surface, absorb the collision energy,
After that, it acts as a mask for the flying raw material ultrafine particles, and it becomes difficult to grind. Therefore, when observing the surface of the formed deposit (film), very large irregularities and adhered compacts are observed. In addition, even when observed from the back side of the substrate, a low-density deposit including the compacted raw material ultra-fine particles adhered was obtained. In such a PZT deposit, since the crystallite size of the compact contained in the film is small, even if heat treatment is performed after the deposition, grain growth does not occur and pores are formed. In this case, the dielectric breakdown is as low as 50 kV / cm and dielectric breakdown is likely to occur.
【００２３】これに対して、基板への原料超微粒子流の
入射角度が３５度の角度で吹き付けた場合は、基板ある
いは堆積物（膜）表面に圧粉体として強固に凝着した微
粒子が除去され、上述した場合に観察された、堆積物
（膜）表面に凝着した圧粉体は観察されず、基板裏面か
らの観察からも、堆積物（膜）内部に圧粉体は観察され
ず基板に対して強固に付着した緻密な堆積体（膜）が形
成できた。超微粒子材料の基板３の表面２０上への吹き
付け供給は、搬送ガスとノズル８を用いて噴射する。On the other hand, when the angle of incidence of the flow of the raw material ultra-fine particles onto the substrate is sprayed at an angle of 35 degrees, the fine particles firmly adhered as a compact to the surface of the substrate or the deposit (film) are removed. The compact compacted on the surface of the deposit (film) observed in the above case was not observed, and no compact was observed inside the deposit (film) from the backside of the substrate. A dense deposit (film) firmly adhered to the substrate was formed. The ultrafine particle material is sprayed and supplied onto the surface 20 of the substrate 3 by using the carrier gas and the nozzle 8.
【００２４】堆積膜２ａが完成した膜２としての性能を
もつ場合には、それで成膜工程は終了するが、完成した
膜２を得るためには堆積膜２ａの表面を平坦にしたり、
超微粒子材料の接合強度を高める必要のある場合は、後
述の平坦化工程や機械的衝撃力負荷工程を堆積膜２ａに
加える。When the deposited film 2a has the performance as the completed film 2, the film forming process is completed. However, in order to obtain the completed film 2, the surface of the deposited film 2a may be flattened,
When it is necessary to increase the bonding strength of the ultrafine particle material, a flattening step and a mechanical impact load step described below are added to the deposited film 2a.
【００２５】次に超微粒子材料の堆積物２ａの表面を平
坦化する技術について説明する。付着粒子除去装置６は
基板３の表面２０上に供給されて形成された超微粒子材
料２１の堆積膜２ａの表面を掻いて表面をならし表面か
ら突出している径の大きい超微粒子材料や或いは膜面の
表面に浮き出している超微粒子材料等の不良粒子を掻き
出して除去するものである。付着粒子除去装置６は付着
粒子除去ブレード１１とギャップ制御機構１２とを備え
ている。付着粒子除去ブレード１１は硬質ゴムや金属板
でできていて、ノズル８の近傍に位置し、基板３との相
対運動を利用してノズル８から基板３の表面２０上に供
給された超微粒子材料の堆積膜２ａの表面部分を掻きな
らして不良粒子の沈着粒子や付着粒子を掻き出して除去
して表面掻き取り膜２ｂを形成する。付着粒子除去ブレ
ード１１による堆積膜２ａの表面部分の掻き取り量は付
着粒子除去ブレード１１と基板３との隙間の間隔を調整
することによってなされ、その調整はギャップ制御機構
１２を動作させて付着粒子除去ブレード１１を駆動して
行う。Next, a technique for flattening the surface of the deposit 2a of the ultrafine particle material will be described. The adhering particle removing device 6 scrapes the surface of the deposited film 2a of the ultrafine particle material 21 formed on the surface 20 of the substrate 3 and smoothes the surface, and the ultrafine particle material or the film having a large diameter protruding from the surface. Defective particles, such as ultrafine particle material, which are raised on the surface of the surface are scraped out and removed. The attached particle removing device 6 includes an attached particle removing blade 11 and a gap control mechanism 12. The adhering particle removing blade 11 is made of a hard rubber or a metal plate, is located near the nozzle 8, and is supplied from the nozzle 8 onto the surface 20 of the substrate 3 using the relative motion with the substrate 3. The surface portion of the deposited film 2a is scraped, and the deposited particles and adhered particles of the defective particles are scraped and removed to form the surface scraping film 2b. The amount of scraping of the surface portion of the deposited film 2a by the attached particle removing blade 11 is adjusted by adjusting the gap between the attached particle removing blade 11 and the substrate 3, and the adjustment is performed by operating the gap control mechanism 12 to adjust the attached particle. The removal is performed by driving the removal blade 11.
【００２６】付着粒子除去ブレード１１によって表面を
所要量だけ掻き取られて形成された表面掻き取り膜２ｂ
は次に膜面加工装置７によって加工を受ける。膜面加工
装置７は研削・研磨ローラー１３とギャップ制御機構１
４とを備えている。研削・研磨ローラー１３は研磨用の
ブラシや研磨材を形成したローラーで構成されていて、
これを基板の走査速度に応じて回転させながら表面掻き
取り膜２ｂの表面に接触させ、形成された表面掻き取り
膜２ｂを研磨、研削することで膜厚の制御を行い完成し
た膜２を得る。このとき、光学式変位計やエアーマイク
ロ変位計などの変位計１５などを用いて研磨前、研磨後
の膜厚を測定し、これに応じて、堆積膜２ａや表面掻き
取り膜２ｂの表面と研削・研磨ローラー１３や付着粒子
除去ブレード１１との隙間（ギャップ）を制御する。こ
のときのギャップや押しつけ圧の調整は、ギャップ制御
機構１２、１４を用いて行う。A surface scraping film 2b formed by scraping the surface by a required amount by the attached particle removing blade 11
Is then processed by the film surface processing device 7. The film surface processing device 7 includes a grinding / polishing roller 13 and a gap control mechanism 1
4 is provided. The grinding / polishing roller 13 is composed of a polishing brush or a roller on which an abrasive is formed.
This is brought into contact with the surface of the surface scraping film 2b while being rotated according to the scanning speed of the substrate, and the formed surface scraping film 2b is polished and ground to control the film thickness and obtain the completed film 2. . At this time, the film thickness before and after polishing is measured using a displacement meter 15 such as an optical displacement meter or an air micro displacement meter, and the surface of the deposited film 2a or the surface of the surface scraping film 2b is accordingly measured. The gap between the grinding / polishing roller 13 and the attached particle removing blade 11 is controlled. The adjustment of the gap and the pressing pressure at this time is performed using the gap control mechanisms 12 and 14.
【００２７】なお、上記した実施例は、基板３の表面２
０上に供給された超微粒子材料２１の堆積膜２ａに対し
て付着粒子除去装置６による表面掻き取り膜２ｂを形成
する加工と、次に膜面加工装置７による完成した膜２を
得る加工との２つの加工を併用したものであるが、膜２
と同じものが一加工で得られる場合は付着粒子除去装置
６による加工と膜面加工装置７による加工のいずれか一
方だけで済ませることもできる。In the above-described embodiment, the surface 2 of the substrate 3
A process of forming a surface scraping film 2b by the attached particle removing device 6 on the deposited film 2a of the ultrafine particle material 21 supplied on the surface 0, and a process of obtaining the completed film 2 by the film surface processing device 7 next. The two processes are used together, but the film 2
In the case where the same is obtained by one processing, it is possible to perform only one of the processing by the attached particle removing device 6 and the processing by the film surface processing device 7.
【００２８】また、成膜中に膜面を研磨、研削すること
により発生する粉塵を積極的に除去するために、膜面の
研磨、研削部位に近接して、ガスジェットを噴射するた
めにノズルを設けたり、或いは粉塵吸引機構を設けた構
成にしてもよい。また、超微粒子材料として金属超微粒
子材料を用いる場合は、脆性材料であるセラミックスの
場合よりも、膜の緻密化に注意を払う必要があることか
ら、ローラーを用いて堆積膜２ａの表面を押しつけ、金
属の塑性変形を利用して、膜表面の平坦化を図ることが
有利な場合もある。この場合に使用するローラーは研削
・研磨ローラー１３に代替して設置される。Further, in order to positively remove dust generated by polishing and grinding the film surface during film formation, a nozzle is provided for injecting a gas jet close to the polishing and grinding portion of the film surface. Or a configuration in which a dust suction mechanism is provided. When a metal ultrafine particle material is used as the ultrafine particle material, it is necessary to pay more attention to the densification of the film than in the case of the ceramic which is a brittle material. Therefore, the surface of the deposited film 2a is pressed using a roller. In some cases, it may be advantageous to make the film surface flat by utilizing the plastic deformation of the metal. The roller used in this case is installed in place of the grinding / polishing roller 13.
【００２９】基板の表面２０上に供給された超微粒子材
料の堆積物の表層部分を均し若しくは掻き取り、研削若
しくは研磨しまたは押圧する平坦化工程は、超微粒子材
料供給装置から超微粒子材料が基板上に１回供給されて
単層構造の堆積膜２ａが形成される毎にその単層構造の
堆積膜に対して加えられ、そのような超微粒子材料の１
回の供給による単層構造の堆積膜の形成と、その単層構
造の堆積膜に対して加えられる平坦化工程との組合せを
複数回繰返すものであってもよいし、また、超微粒子材
料供給装置から超微粒子材料が複数回供給されて多層構
造の堆積膜２ａが形成された後にその多層構造の堆積膜
２ａに対して加えられるのであってもよい。前者の単層
構造の堆積膜の形成毎に平坦化工程を加える場合には、
完成した膜を内部まで緻密化させるのに有利である。The flattening step of leveling or scraping, grinding, polishing or pressing the surface layer portion of the deposit of the ultra-fine particle material supplied on the surface 20 of the substrate is performed by the ultra-fine particle material supply device. Each time a single-layered deposited film 2a is supplied on the substrate to form a single-layered deposited film 2a, it is added to the single-layered deposited film 2a.
The combination of the formation of the deposited film having the single-layer structure by the supply of the single-layer structure and the planarization step applied to the deposited film having the single-layer structure may be repeated a plurality of times. The ultrafine particle material may be supplied from the apparatus a plurality of times to form the multilayered deposited film 2a and then added to the multilayered deposited film 2a. In the case where a planarization step is added every time the former single-layer structure deposited film is formed,
This is advantageous for densifying the completed film to the inside.
【００３０】以上説明した実施例では、超微粒子膜は基
板上に堆積された堆積膜２ａに対して均し若しくは掻き
取り、研削若しくは研磨し、または押圧する等の平坦化
工程を加えているが、これ以外に原料である超微粒子材
料あるいは堆積中の膜表面に、イオンビームやプラズマ
などを、照射し、超微粒子材料あるいは堆積中の膜表面
を活性化することで、堆積膜を構成する超微粒子材料同
士あるいは膜表面とを低温で接合させて、成膜する成膜
法（平成１０年特許願第２０８９９８号参照）の場合や
堆積膜に機械的衝撃力を負荷して超微粒子材料を粉砕し
て堆積膜を構成する超微粒子材料を接合させて成膜する
成膜法（平成１１年特許出願１１７３２８号参照）の技
術もこの発明に適用し、プラズマイオンビーム発生装置
１６を用いて、超微粒子材料あるいは堆積中の膜表面
に、イオンビームやプラズマなどを照射して形成された
膜、あるいは、機械的衝撃力負荷装置５を使用して、超
微粒子材料に静電界やガス搬送により超微粒子材料を加
速して基板上の超微粒子材料に吹き付けて衝突させる
か、高速回転するブラシやローラー或いは高速に上下動
する圧針や爆発力を利用した高速に移動するピストンな
どを用いてまたは超音波を作用させて機械的衝撃力を負
荷して超微粒子材料を低温接合させて形成された膜に対
して、均し若しくは掻き取り、研削若しくは研磨または
押圧する工程を加えてもよく、または基板上の堆積膜、
掻き取り膜、もしくは研削、研磨された膜２ｂに対し
て、機械的衝撃力負荷装置５を使用して機械的衝撃力を
負荷して膜２を完成させてもよい。堆積膜に機械的衝撃
力を負荷して超微粒子材料を粉砕して堆積膜を構成する
超微粒子材料を接合させる場合は、超微粒子材料に加え
る機械的衝撃力に応じて、使用する超微粒子材料を上述
の機械的衝撃力で粉砕が容易に起こるように前記超微粒
子材料を処理する。その処理は原料超微粒子材料の仮焼
き温度を変えて調整するか、数十ｎｍ程度の粒径に調整
された超微粒子材料を加熱し、粒径で数５０ｎｍ〜１μ
ｍ程度の２次粒子に凝集させるか、或いは使用する超微
粒子材料に粉砕が容易に生じるように長時間ボールミ
ル、ジェットミル、振動ミル、遊星ミル、ビーズミルな
どの壊砕機或いは粉砕機にかけてクラックなどを予め形
成しておく。In the embodiment described above, the ultrafine particle film is provided with a flattening step such as leveling or scraping, grinding or polishing, or pressing the deposited film 2a deposited on the substrate. In addition, by irradiating the ultrafine particle material or the film surface being deposited with an ion beam or a plasma, and activating the ultrafine particle material or the film surface being deposited, the ultra-fine material constituting the deposited film can be formed. In the case of a film forming method in which fine particles are bonded to each other or the film surface at a low temperature to form a film (see Japanese Patent Application No. 208998), or a mechanical shock is applied to a deposited film to crush the ultra fine particles. The technique of the film forming method of bonding the ultra-fine particle material constituting the deposited film to form a film (refer to Japanese Patent Application No. 117328/1999) is also applied to the present invention. A film formed by irradiating the particle material or the film surface being deposited with an ion beam, plasma, or the like, or using a mechanical impact load device 5 to apply ultra-fine particles to the ultra-fine particle material by electrostatic field or gas transport The material is accelerated and sprayed against the ultra-fine particle material on the substrate to collide with it, using a high-speed rotating brush or roller, a high-speed moving needle, a high-speed moving piston using explosive force, or ultrasonic waves. A step of leveling or scraping, grinding or polishing or pressing a film formed by applying a mechanical impact force to apply a mechanical impact force to bond the ultrafine particle material at a low temperature may be added to the film formed on the substrate, Deposited film,
A mechanical impact force may be applied to the scraped film or the ground or polished film 2b using a mechanical impact load device 5 to complete the film 2. When a mechanical impact force is applied to the deposited film to pulverize the ultra-fine particle material and join the ultra-fine particle material constituting the deposited film, the ultra-fine particle material to be used depends on the mechanical impact force applied to the ultra-fine particle material. The ultra-fine particle material is treated so that pulverization easily occurs by the above-mentioned mechanical impact force. The treatment is carried out by changing the calcining temperature of the raw material ultrafine particle material or heating the ultrafine particle material adjusted to a particle size of about several tens of nanometers to obtain a particle size of several 50 nm to 1 μm.
m or aggregated into secondary particles of about m, or cracked by using a crusher or crusher such as a ball mill, jet mill, vibration mill, planetary mill, bead mill, etc. for a long time so that the ultra-fine particle material used is easily crushed. It is formed in advance.
【００３１】こうしてこの発明ではノズルから供給され
た堆積膜に対して表面を均し若しくは掻き取り、研削若
しくは研磨または押圧して不良粒子を除去し、平滑にす
るが、さらに、堆積膜を押圧して膜２を形成する場合は
堆積膜２ａや表面掻き取り膜３ｂまたは表面掻き取り膜
２ｂに研削や研磨加工を加えた後に、押圧装置を使用し
て押圧する。押圧装置の一例としては図１に示す研削・
研磨ローラー１３に替えて、ローラーの円周面を鏡面に
仕上げた押圧ローラーを使用する。As described above, according to the present invention, the surface of the deposited film supplied from the nozzle is leveled or scraped, and the defective particles are removed and smoothed by grinding or polishing or pressing. When the film 2 is formed by grinding, the deposited film 2a, the surface scraping film 3b, or the surface scraping film 2b is subjected to grinding or polishing, and then pressed using a pressing device. As an example of the pressing device, a grinding and pressing machine shown in FIG.
Instead of the polishing roller 13, a pressing roller having a mirror-finished circumferential surface of the roller is used.
【００３２】[0032]
【発明の効果】以上の説明から明らかな通り、この発明
によれば、膜内の超微粒子材料の接合が充分で組織が緻
密であり、表面が平滑であり、密度の均一な膜を製造す
ることができる超微粒子材料の成膜技術を得ることがで
きる。また、この発明において金属材料超微粒子膜を上
記のように押圧して形成した場合は、このような平坦化
は、例えば本手法で圧電材料であるＰＺＴと電極材料で
ある白金、銀などの金属材料を交互に積層し、駆動電圧
の低い、積層型圧電アクチュエータなどを構成する場合
には重要な意義をもつ技術である。こうして膜の表面が
平坦に形成されると、膜の光学特性も改善され、例えば
ＴｉＯ2では、膜は光学的に透明になる。As is apparent from the above description, according to the present invention, the ultrafine particle material in the film is sufficiently bonded, the structure is dense, the surface is smooth, and the film having a uniform density is manufactured. It is possible to obtain a technique for forming a film of an ultrafine particle material. In the present invention, when the metal material ultra-fine particle film is formed by pressing as described above, such flattening is performed by, for example, PZT which is a piezoelectric material and platinum or silver which is an electrode material by this method. This is an important technique when materials are alternately laminated to form a laminated piezoelectric actuator having a low driving voltage. When the surface of the film is formed flat in this way, the optical characteristics of the film are also improved. For example, with TiO 2 , the film becomes optically transparent.
【００３３】[0033]
【図１】この発明の超微粒子材料平坦化成膜装置を示す
構成説明図FIG. 1 is a structural explanatory view showing an ultrafine particle material flattening film forming apparatus of the present invention.
【図２】入射角を示す説明図FIG. 2 is an explanatory diagram showing an incident angle.
【図３】超微粒子材料の吹き付け状態を示す説明図FIG. 3 is an explanatory view showing a sprayed state of an ultrafine particle material.
【図４】吹き付け装置の例を示す説明図FIG. 4 is an explanatory view showing an example of a spraying device.
【図５】実験方法を示す説明図FIG. 5 is an explanatory diagram showing an experimental method.
【図６】粒子流に対する基板傾斜角度と成膜速度との関
係を示すグラフFIG. 6 is a graph showing a relationship between a substrate inclination angle and a film formation rate with respect to a particle flow.
【図７】粒子流に対する基板傾斜角度と膜表面粗さとの
関係を示すグラフFIG. 7 is a graph showing a relationship between a substrate inclination angle and a film surface roughness with respect to a particle flow.
【図８】超微粒子流の基板への入射角度の違いによる成
膜結果の変化を示す図FIG. 8 is a diagram showing a change in a film formation result due to a difference in incident angle of a flow of ultrafine particles onto a substrate.
【図９】膜面の縦断面を示す説明図FIG. 9 is an explanatory view showing a longitudinal section of a film surface.
【図１０】膜面を示す顕微鏡写真FIG. 10 is a micrograph showing a membrane surface.
【図１１】従来の膜面を示す顕微鏡写真FIG. 11 is a micrograph showing a conventional film surface.
１ 超微粒子材料吹き付け成膜装置 ２ 完成した膜 ２ａ 堆積膜 ２ｂ 表面掻き取り膜 ３ 基板 ４ 超微粒子材料吹き付け装置 ５ 機械的衝撃力負荷装置 ６ 付着粒子除去装置 ７ 膜面加工装置 ８ ノズル ９ 基板駆動装置 １０ チャンバー １１ 付着粒子除去ブレード １２ ギャップ制御機構 １３ 研削・研磨ローラー １４ ギャップ制御機構 １５ 変位計 １６ プラズマイオンビーム発生装置 ２０ 表面 ２１ 超微粒子材料 DESCRIPTION OF SYMBOLS 1 Ultrafine particle material spraying film forming apparatus 2 Completed film 2a Deposited film 2b Surface scraping film 3 Substrate 4 Ultrafine particle material spraying apparatus 5 Mechanical impact load device 6 Adhered particle removal device 7 Film surface processing device 8 Nozzle 9 Substrate drive Apparatus 10 Chamber 11 Adhered particle removal blade 12 Gap control mechanism 13 Grinding / polishing roller 14 Gap control mechanism 15 Displacement gauge 16 Plasma ion beam generator 20 Surface 21 Ultra fine particle material
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ Ｂ０５Ｄ 3/12 Ｂ０５Ｄ 3/12 Ｂ Ｃ Ｅ Ｚ 7/24 ３０１ 7/24 ３０１Ａ ３０２ ３０２Ａ Ｂ２２Ｆ 1/00 Ｂ２２Ｆ 1/00 Ｃ Ｊ Ｃ２３Ｃ 26/00 Ｃ２３Ｃ 26/00 Ｅ (73)特許権者 000010087 東陶機器株式会社 福岡県北九州市小倉北区中島２丁目１番 １号 (74)上記２名の代理人 100075133 弁理士 川井 治男 (72)発明者 明渡 純 茨城県つくば市並木１丁目２番地 工業 技術院機械技術研究所内 (72)発明者 鳩野 広典 福岡県北九州市小倉北区中島２丁目１番 １号 東陶機器株式会社内 (72)発明者 清原 正勝 福岡県北九州市小倉北区中島２丁目１番 １号 東陶機器株式会社内 (72)発明者 麻生 雄二 福岡県北九州市小倉北区中島２丁目１番 １号 東陶機器株式会社内 (72)発明者 横山 達郎 福岡県北九州市小倉北区中島２丁目１番 １号 東陶機器株式会社内 (72)発明者 森 勝彦 福岡県北九州市小倉北区中島２丁目１番 １号 東陶機器株式会社内 (56)参考文献 特開 平４−38604（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) C23C 24/04 B01J 19/12 B05B 13/02 B05D 3/04 B05D 3/12 B05D 7/24 C23C 26/00 ──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 7 Identification code FI B05D 3/12 B05D 3/12 BCCE 7/24 301 7/24 301A 302 302A B22F 1/00 B22F 1/00 C J C23C 26/00 C23C 26/00 E (73) Patent holder 000010087 Tohoku Kikai Co., Ltd. 2-1-1 Nakajima, Kokurakita-ku, Kitakyushu-shi, Fukuoka Prefecture (74) The above two agents 100075133 Patent Attorney Haruo Kawai ( 72) Inventor Jun Akito 1-2-2 Namiki, Tsukuba, Ibaraki Pref. Machinery Research Laboratory, Institute of Industrial Science and Technology (72) Inventor Hironori Hatono 2-1-1 Nakajima, Kokurakita-ku, Kitakyushu-shi, Fukuoka Totoki Kiki Co., Ltd. (72) Inventor Masakatsu Kiyohara 2-1-1 Nakajima, Kokurakita-ku, Kitakyushu-shi, Fukuoka Touchi Kikai Co., Ltd. (72) Inventor Yuji Aso Kokura, Kitakyushu-shi, Fukuoka 2-11-1, Nakajima-ku, Toto Toki Kiki Co., Ltd. (72) Inventor Tatsuro Yokoyama 2-1-1, Nakajima, Kokurakita-ku, Kitakyushu-shi, Fukuoka Totoki Kiki Co., Ltd. (72) Inventor Katsuhiko Mori Fukuoka 2-1-1 Nakajima, Kokurakita-ku, Kitakyushu-shi Toto Kiki Co., Ltd. (56) References JP-A-4-38604 (JP, A) (58) Fields investigated (Int. Cl. 7 , DB name) C23C 24/04 B01J 19/12 B05B 13/02 B05D 3/04 B05D 3/12 B05D 7/24 C23C 26/00
Claims (36)
よって供給して形成した堆積膜によって前記超微粒子材
料の膜を形成する超微粒子材料吹き付け成膜方法であっ
て、前記超微粒子材料の吹き付けの流れの前記基板表面
への入射角度を−６０°〜−５°（−１０°〜−５°を
除く）または＋５°〜＋６０°（＋５°〜＋１０°を除
く）にすることを特徴とする超微粒子材料吹き付け成膜
方法。An ultra-fine particle material spraying method for forming a film of the ultra-fine particle material by a deposited film formed by supplying the ultra-fine particle material onto a substrate surface by spraying, the method comprising spraying the ultra-fine particle material. The angle of incidence of the flow on the substrate surface is -60 ° to -5 ° (-10 ° to -5 °
Excluding) or + 5 ° to + 60 ° ( excluding + 5 ° to + 10 °)
A method for spraying ultrafine particle material.
０°〜−５°を除く）または＋５°〜＋３０°（＋５°
〜＋１０°を除く）であることを特徴とする請求項１記
載の超微粒子材料吹き付け成膜方法。2. The incident angle is from -30 ° to -5 ° (-1).
0 ° to -5 °) or + 5 ° to + 30 ° (+ 5 °
The method of spraying ultrafine particle material according to claim 1, wherein the method is excluding from ± 10 ° .
料が前記基板表面に堆積膜を形成する入射角度と前記堆
積膜を削り取る作用を生じる入射角度との間に入射角度
を切り換えることによって堆積膜の形成と堆積膜の研削
とを切り換えることを特徴とする請求項１記載の超微粒
子材料吹き付け成膜方法。3. The deposited film by switching an incident angle between an incident angle at which the ultrafine material incident on the substrate surface forms a deposited film on the substrate surface and an incident angle at which an action of scraping the deposited film is generated. 2. The method for spraying ultrafine particle material according to claim 1, wherein the method switches between forming and grinding the deposited film.
よって供給して形成した前記超微粒子材料の堆積膜から
前記超微粒子材料の膜を形成する超微粒子材料吹き付け
成膜装置であって、減圧室内の前記基板表面に前記超微
粒子材料を吹き付ける吹き付け装置を有し、前記超微粒
子材料の吹き付けの流れの前記基板表面への入射角が−
６０°〜−５°（−１０°〜−５°を除く）または＋５
°〜＋６０°（＋５°〜＋１０°を除く）になるように
前記吹き付け装置と前記基板とが配置されていることを
特徴とする超微粒子材料吹き付け成膜装置。4. An ultra-fine particle material spraying film forming apparatus for forming a film of the ultra-fine particle material from a deposited film of the ultra-fine particle material formed by spraying the ultra-fine particle material onto a surface of a substrate, the apparatus comprising: A spraying device for spraying the ultra-fine particle material on the substrate surface, wherein the angle of incidence of the spray flow of the ultra-fine particle material on the substrate surface is-
60 ° to -5 ° (excluding -10 ° to -5 °) or +5
The spraying device and the substrate are arranged so as to be in a range of ° to + 60 ° (excluding + 5 ° to + 10 °) .
°〜−５°を除く）または＋５°〜＋６０°（＋５°〜
＋１０°を除く）であることを特徴とする請求項４記載
の超微粒子材料吹き付け成膜装置。5. The incident angle is from −30 ° to −5 ° (−10 °).
° to -5 °) or + 5 ° to + 60 ° (+ 5 ° to
5. The apparatus for spraying ultrafine particle material according to claim 4 , wherein ( excluding + 10 °) .
能に構成したことを特徴とする請求項４記載の超微粒子
材料吹き付け成膜装置。6. ultrafine particle material blown film forming apparatus according to claim 4, characterized in that configured to be able to switch the incident angle to the substrate surface.
微粒子材料の流れの外周部分の少なくとも一部分の前記
入射角が−６０°〜−５°（−１０°〜−５°を除く）
または＋５°〜＋６０°（＋５°〜＋１０°を除く）と
なるように、前記流れが前記流れの中心の周りに末広が
り状に広がりをもつことを特徴とする請求項４記載の超
微粒子材料吹き付け成膜装置。7. The incident angle of at least a part of an outer peripheral portion of a flow of the ultrafine particle material injected from the spraying device is −60 ° to −5 ° (excluding −10 ° to −5 °).
5. The ultrafine particle material spraying according to claim 4 , wherein the flow has a divergent spread around the center of the flow so as to be + 5 ° to + 60 ° (excluding + 5 ° to + 10 °). 6. Film forming equipment.
した超微粒子材料に機械的衝撃力を負荷して粉砕して前
記超微粒子材料同士、前記超微粒子材料同士及び前記超
微粒子材料と前記基板または前記超微粒子材料と前記基
板を接合させることを特徴とする請求項１記載の超微粒
子材料吹き付け成膜方法。8. An ultrafine particle material supplied by spraying onto the surface of the substrate is pulverized by applying a mechanical impact to the ultrafine particle material, the ultrafine particle materials, and the ultrafine particle material and the substrate or the ultrafine particle material. ultrafine particle material blown film forming method according to claim 1, wherein the bonding the said substrate and ultrafine particulate material.
ス搬送により超微粒子材料を加速して前記基板表面上の
超微粒子材料に吹き付けて衝突させるか、高速回転する
高強度のブラシやローラー或いは高速に上下運動する圧
針や爆発の圧縮力を利用した高速に移動するピストンな
どを用いてまたは超音波を作用させて前記基板表面上に
おかれた超微粒子材料に機械的衝撃を加えることを特徴
とする請求項８記載の超微粒子材料吹き付け成膜方法。9. The load of the mechanical impact force may be such that the ultrafine particle material is accelerated by an electrostatic field or gas transfer and is sprayed on and hits the ultrafine particle material on the substrate surface, or a high-speed rotating high-strength brush or the like. Applying mechanical shock to the ultrafine particle material placed on the substrate surface by using a roller, a pressure needle that moves up and down at a high speed, a piston that moves at a high speed using the compressive force of an explosion, or by applying ultrasonic waves. The method of spraying ultrafine particle material according to claim 8, wherein:
力に応じて、使用する超微粒子材料の破壊強度を上述の
機械的衝撃力で粉砕が容易に起こるように、前記超微粒
子材料を処理することを特徴とする請求項８記載の超微
粒子材料吹き付け成膜方法。10. The ultrafine particle material is processed such that the breaking strength of the ultrafine particle material to be used is easily crushed by the mechanical impact force according to the mechanical impact force applied to the ultrafine particle material. 9. The method of spraying ultrafine particle material according to claim 8, wherein:
温度を変えて調整するか、数十ｎｍ程度の粒径に調整さ
れた超微粒子材料を加熱し、粒径で５０ｎｍ〜１μｍ程
度の２次粒子に凝集させるか、或いは使用する超微粒子
材料に粉砕が容易に生じるように壊砕機或いは粉砕機に
かけてクラックなどを予め形成しておくことを特徴とす
る請求項１０記載の超微粒子材料吹き付け成膜方法。11. The treatment may be carried out by changing the calcining temperature of the raw material ultrafine particle material, or by heating the ultrafine particle material adjusted to a particle size of about several tens of nanometers, and adjusting the particle size to 50 nm to 1 μm. The ultrafine particle material spraying method according to claim 10 , wherein cracks or the like are formed in advance using a crusher or a crusher so that the particles are aggregated into the next particles or the ultrafine particle material to be used is easily crushed. Membrane method.
上に供給された超微粒子材料に機械的衝撃力を負荷して
粉砕するための粉砕用微粒子を前記基板表面上に吹き付
けることを特徴とする請求項８記載の超微粒子材料吹き
付け成膜方法。12. A fine particle for applying a mechanical impact force to the ultra-fine particle material and the ultra-fine particle material mainly supplied onto the substrate to pulverize the substrate, and spraying the particles onto the surface of the substrate. Item 9. The method for spraying ultrafine particle material according to Item 8 .
とを混合して一緒にした混合微粒子を前記基板に吹き付
けることを特徴とする請求項１２記載の超微粒子材料吹
き付け成膜方法。13. The method according to claim 12 , wherein the mixed fine particles obtained by mixing the ultrafine particle material and the fine particles for pulverization are sprayed on the substrate.
が前記基板表面上に供給された後に前記基板表面上に供
給され、または前記超微粒子材料と前記粉砕用微粒子が
交互に前記基板表面上に供給されることを特徴とする請
求項１２記載の超微粒子材料吹き付け成膜方法。14. The fine particles for grinding are supplied on the substrate surface after the fine particle material is supplied on the substrate surface, or the fine particle materials and the fine particles for grinding are alternately provided on the substrate surface. 13. The method for spraying ultrafine particle material according to claim 12, wherein said method is supplied.
粒子はその粒径分布として前記超微粒子材料が形成する
粒径分布ピークと前記粉砕用微粒子が形成する粒径分布
ピークとの少なくとも２つの粒径分布ピークをもつこと
を特徴とする請求項１３記載の超微粒子材料吹き付け成
膜方法。15. The mixed fine particles sprayed on the substrate surface have at least two particle size distributions, a particle size distribution peak formed by the ultrafine particle material and a particle size distribution peak formed by the fine particles for grinding. 14. The method for spraying ultrafine particle material according to claim 13, wherein the method has a peak.
よりも平均粒径が大きいことを特徴とする請求項１２記
載の超微粒子材料吹き付け成膜方法。16. The method according to claim 12, wherein the fine particles for pulverization have a larger average particle diameter than the ultrafine particle material.
よりも平均硬度が高いことを特徴とする請求項１２記載
の超微粒子材料吹き付け成膜方法。17. The method according to claim 12, wherein the fine particles for pulverization have a higher average hardness than the ultrafine particle material.
〜５μｍであり、前記超微粒子材料は平均粒径が１０ｎ
ｍ〜１μｍであることを特徴とする請求項１２記載の超
微粒子材料吹き付け成膜方法。18. The fine particles for pulverization have an average particle diameter of 0.5.
5 μm, and the ultrafine particle material has an average particle size of 10 n.
13. The method of spraying ultrafine particle material according to claim 12, wherein the thickness is from m to 1 [mu] m.
は同じ組成であることを特徴とする請求項１２記載の超
微粒子材料吹き付け成膜方法。19. The method according to claim 12 , wherein the fine particles for grinding and the ultrafine particle material have the same composition.
ることによって供給して形成した堆積膜によって前記超
微粒子材料の膜を形成する装置であって、前記超微粒子
材料の吹き付けの流れの前記表面への入射角度を−６０
°〜−５°（−１０°〜−５°を除く）または＋５°〜
＋６０°（＋５°〜＋１０°を除く）にする超微粒子材
料吹き付け成膜装置であって、前記堆積膜を形成する超
微粒子材料に機械的衝撃力を負荷する機械的衝撃力負荷
装置を備えることを特徴とする請求項４記載の超微粒子
材料吹き付け成膜装置。20. An apparatus for forming a film of the ultra-fine particle material by a deposited film formed by supplying the ultra-fine particle material onto a substrate surface by spraying the ultra-fine particle material onto the surface of the substrate. Incident angle of -60
° to -5 ° (excluding -10 ° to -5 °) or + 5 ° to
An apparatus for spraying ultrafine particles at + 60 ° (excluding + 5 ° to + 10 °) , comprising a mechanical impact load device for applying a mechanical impact to the ultrafine particles forming the deposited film. The apparatus for spraying ultrafine particle material according to claim 4 , characterized in that:
給された前記超微粒子材料の堆積膜の表面を平坦にする
平坦化工程を一回以上加えて前記超微粒子材料の膜を形
成することを特徴とする請求項１記載の超微粒子材料吹
き付け成膜方法。21. A method of forming a film of the ultra-fine particle material by applying a flattening step for flattening the surface of the deposited film of the ultra-fine particle material supplied by spraying onto the surface of the substrate at least once. The method of spraying ultrafine particle material according to claim 1 .
子材料または金属超微粒子材料であることを特徴とする
請求項２１記載の超微粒子材料吹き付け成膜方法。22. the nanoparticle material ultrafine particulate material blown film forming method according to claim 21, characterized in that the ceramic ultrafine particle material or a metal ultrafine particle material.
給された前記超微粒子材料の堆積膜の表層部分を均し若
しくは掻き取りまたは研削若しくは研磨するものである
ことを特徴とする請求項２１記載の超微粒子材料吹き付
け成膜方法。23. The flattening step according to claim 21 , wherein a surface portion of the ultrafine particle material deposited on the substrate surface is leveled or scraped, ground or polished. The method for spraying ultrafine particle material described above.
給された前記超微粒子材料の堆積膜を押圧するものであ
ることを特徴とする請求項２１記載の超微粒子材料吹き
付け成膜方法。24. The method according to claim 21, wherein the flattening step presses the deposited film of the ultra-fine particle material supplied on the surface of the substrate.
磨または研削作用のある平坦化用の微粒子を静電界やガ
スを用いて加速し基板表面上あるいは前記堆積膜の表面
に吹き付けて前記堆積膜の表面を平坦にする平坦化工程
を一回以上加えて前記超微粒子材料の膜を形成すること
を特徴とする請求項２１記載の超微粒子材料吹き付け成
膜方法。25. A method for accumulating flattening particles having a polishing or grinding action on a deposited film of the ultrafine particle material using an electrostatic field or a gas and spraying the particles on a substrate surface or a surface of the deposited film. 22. The method for spraying ultrafine particle material according to claim 21, wherein a film of the ultrafine particle material is formed by adding a flattening step for flattening the surface of the film at least once.
の微粒子を前記基板表面対して−６０°〜−５°（−１
０°〜−５°を除く）または＋５°〜＋６０°（＋５°
〜＋１０°を除く）の入射角度範囲で吹き付けることを
特徴とする請求項２１記載の超微粒子材料吹き付け成膜
方法。26. In the flattening step, the fine particles for flattening are applied to the surface of the substrate at −60 ° to −5 ° (−1).
0 ° to -5 °) or + 5 ° to + 60 ° (+ 5 °
22. The method for spraying ultrafine particle material according to claim 21 , wherein the spraying is performed in an incident angle range of ( excluding + 10 °) .
材料と前記平坦化用の微粒子を同時にあるいは別々にノ
ズルや静電加速銃等の吹き付け装置から基板に対し噴射
し、前記吹き付け装置から噴射される前記超微粒子材料
または平坦化用の微粒子の流れの外周部分の少なくとも
一部分の前記入射角が−６０°〜−５°（−１０°〜−
５°を除く）または＋５°〜＋６０°（＋５°〜＋１０
°を除く）となるように前記流れが前記流れの中心の周
りに末広がり状に広がりをもつことを特徴とする請求項
２１記載の超微粒子吹き付け成膜方法。27. In the flattening step, the ultrafine particle material and the flattening fine particles are simultaneously or separately sprayed onto a substrate from a spraying device such as a nozzle or an electrostatic acceleration gun, and sprayed from the spraying device. The incident angle of at least a part of the outer peripheral portion of the flow of the ultrafine particle material or the flattening fine particles is −60 ° to −5 ° (−10 ° to −10 °).
5 ° excluding) or + 5 ° ~ + 60 ° ( + 5 ° ~ + 10
The flow has a divergent shape around the center of the flow so as to be ( excluding ° ).
23. The method for spraying ultrafine particles according to 21 .
子材料と同一組成であることを特徴とする請求項２７記
載の超微粒子材料吹き付け成膜方法。28. The method according to claim 27 , wherein the fine particles for planarization have the same composition as the ultrafine particle material.
子材料より粒径が大きい微粒子であることを特徴とする
請求項２７記載の超微粒子材料吹き付け成膜方法。29. The method according to claim 27 , wherein the fine particles for planarization are fine particles having a larger particle diameter than the ultrafine particle material.
子材料より硬度が高い微粒子であることを特徴とする請
求項２７記載の超微粒子材料吹き付け成膜方法。30. The method according to claim 27 , wherein the fine particles for flattening are fine particles having higher hardness than the ultrafine particle material.
ることによって供給して形成した堆積膜によって前記超
微粒子材料の膜を形成する装置であって、前記超微粒子
材料の吹き付けの流れの前記表面への入射角度を−６０
°〜−５°（−１０°〜−５°を除く）または＋５°〜
＋６０°（＋５°〜＋１０°を除く）にする超微粒子材
料吹き付け成膜装置であって、前記超微粒子材料の堆積
膜の表層部分を均し若しくは掻き取る付着粒子除去装
置、前記堆積膜の表層部分を研削若しくは研磨する膜面
加工装置及び前記堆積膜を押圧する押圧装置のうちの少
なくとも一を備えることを特徴とする超微粒子材料吹き
付け成膜装置。31. An apparatus for forming a film of the ultrafine particle material by a deposited film formed by supplying the ultrafine particle material by spraying the surface of the ultrafine particle material onto the surface of the substrate, wherein the flow of the spray of the ultrafine particle material is applied to the surface. Incident angle of -60
° to -5 ° (excluding -10 ° to -5 °) or + 5 ° to
An apparatus for spraying ultrafine particles by + 60 ° (excluding + 5 ° to + 10 °) , which removes adhered particles by leveling or scraping a surface layer of the deposited film of the ultrafine material, and a surface layer of the deposited film. An apparatus for spraying ultrafine particle material, comprising at least one of a film surface processing device for grinding or polishing a portion and a pressing device for pressing the deposited film.
くは前記膜面加工装置とは相対変位可能に構成されてい
ることを特徴とする請求項３１記載の超微粒子材料吹き
付け成膜装置。32. The apparatus for spraying ultrafine particle material according to claim 31, wherein the substrate and the attached particle removing apparatus or the film surface processing apparatus are configured to be relatively displaceable.
ズマを照射する照射装置を備えることを特徴とする請求
項３１記載の超微粒子材料吹き付け成膜装置。33. It ultrafine particle material blown film forming apparatus according to claim 31, wherein comprising an irradiation device for irradiating an ion beam or plasma in the deposition film.
ることによって供給して形成した堆積膜によって前記超
微粒子材料の膜を形成する装置であって、前記超微粒子
材料の吹き付けの流れの前記表面への入射角度を−６０
°〜−５°（−１０°〜−５°を除く）または＋５°〜
＋６０°（＋５°〜＋１０°を除く）にする超微粒子材
料吹き付け成膜装置であって、前記形成された堆積膜表
面を平坦化する前記平坦化行程として、前記堆積膜に対
して研磨または研削作用のある平坦化用の微粒子を基板
あるいは前記超微粒子材料の堆積膜表面に吹き付けるこ
とを特徴とする超微粒子材料吹き付け成膜装置。34. An apparatus for forming a film of the ultra-fine particle material by a deposited film formed by supplying the ultra-fine particle material onto the surface of the substrate by spraying the ultra-fine particle material onto the surface of the substrate, Incident angle of -60
° to -5 ° (excluding -10 ° to -5 °) or + 5 ° to
An apparatus for spraying ultra-fine particles by + 60 ° (excluding + 5 ° to + 10 °) , wherein the deposited film is polished or ground as the flattening step of flattening the surface of the formed deposited film. An apparatus for spraying ultrafine particle material, which sprays active fine particles for planarization onto a substrate or a surface of a deposited film of the ultrafine particle material.
材料と前記平坦化用の微粒子材料を同時にまたは別々に
ノズルや静電加速銃等の吹き付け装置から基板に噴射す
る機構を有し、前記吹き付け装置の吹き出しの中心軸が
前記基板面対して、−６０°〜−５°（−１０°〜−５
°を除く）または＋５°〜＋６０ °（＋５°〜＋１０°
を除く）の入射角度範囲に配置されていることを特徴と
する請求項３４記載の超微粒子材料吹き付け成膜装置。35. The flattening step, wherein the ultra-fine particle material and the flattening fine particle material are simultaneously or separately jetted from a spraying device such as a nozzle or an electrostatic acceleration gun onto a substrate. The central axis of the blowout of the device is -60 ° to -5 ° (-10 ° to -5 °) with respect to the substrate surface.
°) or + 5 ° to + 60 ° (+ 5 ° to + 10 °)
It is disposed in the incident angle range of the excluded) ultrafine particle material blown film forming apparatus according to claim 34, wherein.
材料と前記平坦化用の微粒子を同時にあるいは別々にノ
ズルや静電加速銃等の吹き付け装置から基板に対し噴射
し、前記吹き出し装置から噴射される前記超微粒子材料
または平坦化用の微粒子の流れの外周部分の少なくとも
一部の前記入射角度が−６０°〜−５°（−１０°〜−
５°を除く）または＋５°〜＋６０°（＋５°〜＋１０
°を除く）となるように前記流れが前記流れの中心の周
りに末広がり状に広がりをもつことを特徴とする請求項
３４記載の超微粒子吹き付け成膜装置。36. In the flattening step, the ultrafine particle material and the flattening fine particles are simultaneously or separately sprayed onto a substrate from a spraying device such as a nozzle or an electrostatic acceleration gun, and sprayed from the blowing device. The incident angle of at least a part of the outer peripheral portion of the flow of the ultrafine particle material or the flattening fine particles is −60 ° to −5 ° (−10 ° to −10 °).
5 ° excluding) or + 5 ° ~ + 60 ° ( + 5 ° ~ + 10
The flow has a divergent shape around the center of the flow so as to be ( excluding ° ).
35. The apparatus for spraying ultrafine particles according to claim 34 .
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|---|---|---|---|
| JP2000205601A JP3338422B2 (en) | 2000-07-06 | 2000-07-06 | Ultrafine particle spraying method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000205601A JP3338422B2 (en) | 2000-07-06 | 2000-07-06 | Ultrafine particle spraying method |
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| Publication Number | Publication Date |
|---|---|
| JP2002020878A JP2002020878A (en) | 2002-01-23 |
| JP3338422B2 true JP3338422B2 (en) | 2002-10-28 |
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|---|---|---|---|
| JP2000205601A Expired - Lifetime JP3338422B2 (en) | 2000-07-06 | 2000-07-06 | Ultrafine particle spraying method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006307040A (en) * | 2005-04-28 | 2006-11-09 | National Institute Of Advanced Industrial & Technology | Modified plastic and method for producing the same |
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| JP4736019B2 (en) | 2003-11-27 | 2011-07-27 | 独立行政法人産業技術総合研究所 | Manufacturing method of molded body |
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| EP1848842A4 (en) * | 2005-02-16 | 2010-04-07 | Showa Denko Kk | Heat exchanger member and production method thereof |
| JP2007182605A (en) * | 2006-01-06 | 2007-07-19 | Konica Minolta Holdings Inc | Method for forming thin film, and thin film |
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| JP5664075B2 (en) * | 2010-07-26 | 2015-02-04 | 富士通株式会社 | Film forming apparatus and film forming method |
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| JP2012246525A (en) * | 2011-05-26 | 2012-12-13 | Toto Ltd | Film formation apparatus |
| JP6485118B2 (en) * | 2015-03-04 | 2019-03-20 | セイコーエプソン株式会社 | Piezoelectric drive device and robot |
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2000
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006307040A (en) * | 2005-04-28 | 2006-11-09 | National Institute Of Advanced Industrial & Technology | Modified plastic and method for producing the same |
| JP4595118B2 (en) * | 2005-04-28 | 2010-12-08 | 独立行政法人産業技術総合研究所 | Modified plastics and method for producing the same |
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| Publication number | Publication date |
|---|---|
| JP2002020878A (en) | 2002-01-23 |
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|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
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| EXPY | Cancellation because of completion of term |